CN102856266A - Integrated insulating ceramic substrate - Google Patents
Integrated insulating ceramic substrate Download PDFInfo
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- CN102856266A CN102856266A CN2012103490855A CN201210349085A CN102856266A CN 102856266 A CN102856266 A CN 102856266A CN 2012103490855 A CN2012103490855 A CN 2012103490855A CN 201210349085 A CN201210349085 A CN 201210349085A CN 102856266 A CN102856266 A CN 102856266A
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- base plate
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- insulating substrate
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Abstract
The invention relates to an integrated insulating ceramic substrate which comprises a metal bottom plate, a conducting layer and an insulating ceramic layer. The insulating ceramic layer is fixedly connected with the metal bottom plate and the conducting layer respectively. The integrated insulating ceramic substrate can effectively shorten production processes of electronic power devices, improve radiating effect of electronic devices and reduce packaging size of the electronic power devices.
Description
Technical field
The present invention relates to electronic equipment and ceramic substrate technical field, particularly a kind of integrated ceramic insulating substrate.
Background technology
Along with the pay attention to day by day of countries in the world to energy-saving and emission-reduction, the various energy-saving equipment that design based on power electronic device are served the energy, traffic, electric power, industry, military project and daily life product more and more.But along with plant capacity is increasing.The power of electronic device also improves constantly, be balance electronic device power dissipation, the size of its encapsulation is also increasing, and this has just brought the increase of equipment volume and power dissipation, therefore, how to dwindle the overall volume of power apparatus and reduce the problem such as its power dissipation and just become and become increasingly conspicuous.
Because most power chip need to be carried by ceramic substrate in the power electronic device production process, then again ceramic substrate is welded on the base plate by scolder.Ceramic substrate and base plate welding procedure are made from the power electronic device encapsulation in last century and are begun to prevail.Yet this is caving-in bash, because the technology that does not have to be fit to can make ceramic substrate avoid being welded on the base plate.Expend a large amount of welding materials in welding process, waste of manpower consumes the energy, occupied ground, and simultaneously also with certain quality risk, and along with this quality risk of the increase of power electronic device power will significantly increase.
In addition, because power electronic device traditional ceramics substrate needs to weld with base plate, and strengthened the thermal resistance of device, so that the heat of power chip can not pass timely, thereby widened the temperature difference between chip and base plate, so that the package dimension of electronic device has to amplify, to adapt to its radiating requirements, yet this is power and the integrated level of limited chip greatly, has increased huge difficulty for design and the production of electronic applications.
Summary of the invention
Main purpose of the present invention is, for above-mentioned deficiency of the prior art, provides a kind of integrated ceramic insulating substrate, with the production technology of effective shortening electronic device, improves the radiating effect and the package dimension that reduces electronic device of electronic device.
For achieving the above object, the present invention by the following technical solutions.
The invention provides a kind of integrated ceramic insulating substrate, it comprises metal base plate and conductive layer, is provided with dielectric ceramic layer between described metal base plate and conductive layer, and described dielectric ceramic layer is fixedly connected with conductive layer with described metal base plate respectively.
Preferably, described metal base plate is copper, aluminium, copper alloy, aluminium alloy or stainless steel material.
Preferably, described dielectric ceramic layer is Al2O3, BaTiO3, Mg2SiO4, AlN, Si3N4 or its mixture.
Preferably, described conductive layer is gold, silver, copper or tin.
Preferably, described dielectric ceramic layer applies through process of surface treatment and is overlying on the described metal base plate.
Preferably, described conductive layer applies through depositing operation and is overlying on the described dielectric ceramic layer.
Preferably, described conductive layer surface has electrodeposited coating.
Than above-mentioned prior art, the invention has the advantages that:
1, can improve the generation quality, simplify the production procedure of power electronic power device package, the techniques such as welding have been saved in the investment of saving a large amount of places, equipment, electric power, manpower, consumptive material, make the more energy-conservation and environmental protection of production technology, effectively reduce production costs.
2, can significantly improve the performance of power electronic power device.Owing to improved the radiating effect of electronic power components, therefore, can increase power and other electric parameter of electronic power components.
3, can effectively prolong the useful life of electronic power components product.Because the heat that electronic power components produces can shed in time, the inside and outside temperature difference of electronic power components is reduced, therefore, can effectively prevent the aging of electronic power components, thus life-saving.
Description of drawings
Fig. 1 is the structural representation of integrated ceramic insulating substrate in the embodiment of the invention.
The realization of the object of the invention, functional characteristics and advantage are described further with reference to accompanying drawing in connection with embodiment.
Embodiment
Describe technical scheme of the present invention in detail below with reference to drawings and the specific embodiments, so as clearer, understand invention essence of the present invention intuitively.
Fig. 1 is the structural representation of integrated ceramic insulating substrate in the embodiment of the invention.
With reference to shown in Figure 1, the invention provides a kind of integrated ceramic insulating substrate 100 that is applied to electronic device, it comprises metal base plate 1 and conductive layer 3, and between metal base plate 1 and conductive layer 3, be provided with a dielectric ceramic layer 2, the lower surface of this dielectric ceramic layer 2 is fixedly connected with metal base plate 1, upper surface is fixedly connected with conductive layer 3, makes above-mentioned becoming one of trilaminate material structure.
Particularly, the metal base plate 1 of present embodiment can adopt the materials such as copper, aluminium, copper alloy, aluminium alloy or stainless steel.Dielectric ceramic layer 2 can adopt ceramic-like materials or its mixtures such as Al2O3, BaTiO3, Mg2SiO4, AlN, Si3N4, and perhaps other material with similar physical and electric property is made.Conductive layer 3 is used for welding with chip or electronic power element etc., forms electronic circuit board, and therefore, the conductive layer 3 of present embodiment need have good electric conductivity, can adopt gold, silver, copper, and tin or other alloy metal material allow to contain a small amount of impurity.
Simultaneously, the dielectric ceramic layer 2 of present embodiment applies through process of surface treatment and is overlying on the metal base plate 1, and dielectric ceramic layer 2 is covered on the metal base plate 1 securely.3 of conductive layers are by techniques such as deposition, printing and sprayings, and conductive layer 3 metals are slowly precipitated, and firmly, stably apply to be overlying on the dielectric ceramic layer 2.After conductive layer 3 completes, can do to strengthen processing (such as electroplating) to the surface of conductive layer 3, make its surfacing smooth, be conducive to and chip and other electron component between the heat transmission, reduce the contact resistance between the two, thereby improve the performance of electronic device, at last conductive layer 3 is done the circuit etching, draw out the circuit diagram that design needs.
The production procedure of the integrated ceramic insulating substrate 100 of present embodiment can be with reference to as follows:
1, the stamped metal base plate 1;
2, metal base plate 1 is electroplated protection against oxidation;
3, surface treatment is applied and is covered dielectric ceramic layer 2;
4, the deposited conductive layers 3 that cover such as deposition, printing and spraying;
5, plating, etching conductive layer 3;
6, laser marking;
7, the full detection tried;
8, packing.
By above-mentioned manufacturing process, make metal base plate 1, dielectric ceramic layer 2 and 3 three layers of formation of conductive layer integral structure, than the traditional ceramics substrate, dimensions is more flexible, especially be fit to make large-size substrate, and can and require according to concrete application conditions to adjust flexibly, can produce the arbitrary dimension specification.
In sum, the integrated ceramic insulating substrate of the embodiment of the invention, not only can save welding sequence, the defective products that effectively shortens the production procedure of electronic power components and avoid causing because of welding, the Effective Raise product quality, but and conduction, heat conductivility between Effective Raise conductive layer and the chip, can significantly improve electric property and the power of product, also can greatly slow down the aging of electronic devices and components, thereby prolong the useful life of electronic power components product.In addition, because the radiating effect of electronic power components promotes, therefore, the package dimension of electronic power components be can reduce, miniaturization and the microminiaturization of electronic power components further realized.
The above only is the preferred embodiments of the present invention; be not so limit its claim; every equivalent structure transformation that utilizes specification of the present invention and accompanying drawing content to do directly or indirectly is used in other relevant technical fields, all in like manner is included in the scope of patent protection of the present invention.
Claims (6)
1. integrated ceramic insulating substrate, it is characterized in that: comprise metal base plate and conductive layer, be provided with dielectric ceramic layer between described metal base plate and conductive layer, described dielectric ceramic layer is fixedly connected with conductive layer with described metal base plate respectively.
2. integrated ceramic insulating substrate as claimed in claim 1, it is characterized in that: described metal base plate is copper, aluminium, copper alloy, aluminium alloy or stainless steel material.
3. integrated ceramic insulating substrate as claimed in claim 1, it is characterized in that: described dielectric ceramic layer is Al2O3, BaTiO3, Mg2SiO4, AlN, Si3N4 or its mixture.
4. integrated ceramic insulating substrate as claimed in claim 1, it is characterized in that: described conductive layer is gold, silver, copper or tin.
5. integrated ceramic insulating substrate as claimed in claim 1 is characterized in that: described dielectric ceramic layer applies through process of surface treatment and is overlying on the described metal base plate.
6. integrated ceramic insulating substrate as claimed in claim 1 is characterized in that: described conductive layer applies through deposition, printing and spraying coating process and is overlying on the described dielectric ceramic layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103490855A CN102856266A (en) | 2012-09-19 | 2012-09-19 | Integrated insulating ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012103490855A CN102856266A (en) | 2012-09-19 | 2012-09-19 | Integrated insulating ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102856266A true CN102856266A (en) | 2013-01-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN2012103490855A Pending CN102856266A (en) | 2012-09-19 | 2012-09-19 | Integrated insulating ceramic substrate |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1374694A (en) * | 2001-03-01 | 2002-10-16 | 同和矿业株式会社 | Insulation substrate for semi-conductor and power modular |
| US20090101392A1 (en) * | 2005-08-29 | 2009-04-23 | Hitachi Metals, Ltd. | Circuit board and semiconductor module using this, production method for circuit board |
| CN101765350A (en) * | 2008-12-23 | 2010-06-30 | 明景科技股份有限公司 | High-power radiating module |
| CN102208371A (en) * | 2010-03-31 | 2011-10-05 | 比亚迪股份有限公司 | Aluminium nitride ceramic copper-clad substrate and preparation method thereof |
-
2012
- 2012-09-19 CN CN2012103490855A patent/CN102856266A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1374694A (en) * | 2001-03-01 | 2002-10-16 | 同和矿业株式会社 | Insulation substrate for semi-conductor and power modular |
| US20090101392A1 (en) * | 2005-08-29 | 2009-04-23 | Hitachi Metals, Ltd. | Circuit board and semiconductor module using this, production method for circuit board |
| CN101765350A (en) * | 2008-12-23 | 2010-06-30 | 明景科技股份有限公司 | High-power radiating module |
| CN102208371A (en) * | 2010-03-31 | 2011-10-05 | 比亚迪股份有限公司 | Aluminium nitride ceramic copper-clad substrate and preparation method thereof |
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Application publication date: 20130102 |