CN102856145A - Method for manufacturing silicon part and silicon part for etching treatment device - Google Patents

Method for manufacturing silicon part and silicon part for etching treatment device Download PDF

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Publication number
CN102856145A
CN102856145A CN2012102284155A CN201210228415A CN102856145A CN 102856145 A CN102856145 A CN 102856145A CN 2012102284155 A CN2012102284155 A CN 2012102284155A CN 201210228415 A CN201210228415 A CN 201210228415A CN 102856145 A CN102856145 A CN 102856145A
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silicon
member made
discarded
materials
silicon materials
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长久保启一
今福光祐
大平贵彦
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention provides a method for manufacturing a silicon part and a silicon part for an etching treatment device, where waste silicon materials of the silicon part of the etching treatment device are properly chosen and used. The method for manufacturing the silicon part is a method for manufacturing the silicon part for an etching treatment device (10) by recycling waste silicon materials of silicon parts of etching treatment devices. The method for manufacturing the silicon part is characterized by comprising a step of feeding the waste silicon materials or materials containing the waste silicon materials into a crucible (55) to be melted, a step of cooling and solidifying the melted materials, a step of cutting off at least an upper surface portion containing the solidified materials to generate polysilicon, and a step of manufacturing the silicon part by using the generated polysilicon.

Description

The silicon member made that the manufacture method of silicon member made and etch processes device are used
Technical field
The present invention relates to the manufacture method of silicon member made and the silicon member made that the etch processes device is used.
Background technology
In the etch processes device, the various silicon fimls on the silicon semiconductor wafer processed (hereinafter referred to as wafer) are carried out etch processes.Various parts in being disposed at the etch processes device in the middle of the various parts in selecting rightly, use the silicon member made in the mode that does not have influence on above-mentioned processing.For example, in the etch processes device, the silicon member made is disposed at and surrounds the focusing ring (focus ring) that loads the wafer on mounting table.And, on the battery lead plate of the comparative electrode that is oppositely arranged with mounting table, also disposed the silicon member made.
Be disposed at the silicon member made in the etch processes device, in processing, can be exposed in the plasma, so it can constantly be consumed, and is deteriorated, its shape can slowly change.If in statu quo continue to use this speciogenesis the silicon member made that changes, the reproducibility of then processing can variation.Therefore, being depleted to a certain degree deteriorated silicon member made, can be counted as its life-span of this time point most, and be used as trade waste and throw away.On the other hand, because what be used in silicon member made that this etch processes device uses in the prior art all is the high monocrystalline silicon of price, so this also becomes one of reason that the operation easily-consumed products cost along with the etch processes device improves.
So, in recent years, changed in the silicon member made and used polycrystalline silicon material.For example, in the patent documentation 1, propose to reclaim discarded silicon materials, and made the manufacture method of polysilicon with the discarded silicon materials that reclaim.
Patent documentation 1: TOHKEMY 2011-71361 communique
Summary of the invention
The problem that invention will solve
But, when making polysilicon by above-mentioned manufacture method, for example also used purity up to also can be described as 11N below the 99.999999999%() high-purity and the high silicon materials of price.So when making the silicon member made with the polycrystalline silicon material substituted single crystal silicon, the reduction of material cost also is limited.
In view of the above problems, the object of the invention is to, by the discarded silicon materials of choice for use in the silicon member made that the etch processes device is used rightly, provide a kind of and can reduce material cost, can effectively utilize again manufacture method and the silicon member made of the silicon member made that the etch processes device of resource uses.
The technological means of dealing with problems
In order to address the above problem, according to a kind of mode of the present invention, a kind of manufacture method of silicon member made is provided, it is for carrying out the manufacture method of the silicon member made used by the etch processes device that discarded silicon materials regeneration is made to being disposed at silicon member made in the etch processes device, the manufacture method of this silicon member made is characterised in that, comprises: above-mentioned discarded silicon materials or the material that contains these discarded silicon materials are put into the operation that crucible melts; Cooling and the operation of solidifying the above-mentioned material that has melted; The Partial Resection that will comprise at least upper surface of the material after above-mentioned the solidifying generates the operation of polysilicon; With the operation of being made above-mentioned silicon member made by the polysilicon of above-mentioned generation.
After above-mentioned discarded silicon materials can being cleaned with the etching solution of regulation, put in the crucible.
Above-mentioned discarded silicon materials or the material that contains these discarded silicon materials put in coated inner wall to be had in the above-mentioned crucible of release materials of regulation kind.
When excising the material after above-mentioned the solidifying, can according to the kind of release materials, will be cut part and be controlled at below surperficial 20mm, whole face of excision above-mentioned material; Perhaps will be cut part and be controlled at below surperficial 15mm, and when excising the upper surface of above-mentioned material, the face beyond the upper surface be sprayed (blast, sandblast) process.
Above-mentioned release materials can Si 3N 4, SiC, SiO 2, among the SiN any one.
The material that contains above-mentioned discarded silicon materials comprises input amount and the impurity of the input amount of above-mentioned discarded silicon materials, silicon raw material,
Impurity containing ratio by the above-mentioned discarded silicon materials that measure to reclaim and based on the desired value of the resistance of the impurity content of measuring and end article, input amount, the input amount of above-mentioned silicon raw material and the input amount of above-mentioned impurity of the above-mentioned discarded silicon materials of above-mentioned crucible put in decision.
The desired value of the resistance of above-mentioned end article (conductivity) is any one value in 1 ~ 4 Ω cm scope.
In order to address the above problem, in other form of the present invention, the silicon member made that provides a kind of etch processes device to use, it is characterized in that: it is made by polysilicon, this polysilicon is the P type polysilicon of boron of having mixed, and it is by to purity being discarded silicon materials more than 99.999% or to contain purity be that the material of the discarded silicon materials more than 99.999% carries out regeneration and generates.
Above-mentioned silicon member made is so that resistance is the mode of 0.01 ~ 100 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
Above-mentioned silicon member made is so that resistance is the mode of 1 ~ 4 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
Above-mentioned silicon member made is so that resistance is the mode of 60 ~ 90 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
Above-mentioned silicon member made is so that the mode of the resistance upper limit below 0.02 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
＜invention effect 〉
Such as top explanation, according to the present invention, by the discarded silicon materials of choice for use in the silicon member made that the etch processes device is used rightly, can provide a kind of and can reduce material cost, can effectively utilize again the manufacture method of the silicon member made that the etch processes device of resource uses and the silicon member made that the etch processes device is used.
Description of drawings
Fig. 1 is the flow chart that expression consists of the manufacture method of the silicon member made that the etch processes device of one embodiment of the present invention uses.
Fig. 2 is the flow chart that the measurement in the manufacture method of expression one execution mode is processed.
Fig. 3 is the longitudinal section of the manufacturing installation of expression one execution mode.
Fig. 4 is the accompanying drawing that the manufacture method of an execution mode is described.
Fig. 5 is the figure of the resistance of the expression polycrystalline silicon material of one execution mode and polycrystalline silicon material.
Fig. 6 is the longitudinal section of etch processes device that disposes the silicon member made of an execution mode.
Symbol description
10 etch processes devices
11 process chambers
20 mounting tables
21 focusing rings
22 ground loops
30 upper electrodes
31 battery lead plates
50 manufacturing installations
55 crucibles
60 carbon heaters
100 ingots (ingot bar)
The C chamber
Embodiment
Below, with reference to accompanying drawing, explain preferred implementation of the present invention.And, in this specification and accompanying drawing, for the structural element that has in essence identical functional structure, enclosed identical symbol, no longer repeat specification.
Below, the manufacture method of the silicon member made that the etch processes device that consists of one embodiment of the present invention is used, after describing, again to the etch processes device that uses this silicon member made with describing.
(at first)
Be disposed at the various parts in the etch processes device, used the silicon member made.For example, in etch processes device 10 as shown in Figure 6, used the silicon member made in the ground loop 22 that surround the focusing ring 21 load the wafer W on mounting table 20, surrounds insulation board 12.In addition, also disposed the silicon member made in the battery lead plate 31 of the comparative electrode 30 relative with mounting table 20.
In the middle of the silicon member made, can use take polysilicon (Poly Si) as raw-material monocrystalline or polycrystalline.Towards the polysilicon manufacturer of etch processes device, the great majority of production are 99.9999999(9N) ~ 99.999999999(11N) polycrystalline of the purity of degree.On the other hand, towards the polysilicon manufacturer of solar energy, the then great majority of production are the polycrystalline of the purity of 99.9999 (5N) ~ 99.9999999 (9N) degree.In general, if do not use discarded silicon materials then generate 99.9999(6N) polycrystalline of above purity; If used discarded silicon materials (recycling product) then can generate 99.999(5N) polycrystalline of above purity.
In the middle of following execution mode, what use is the P type polysilicon of boron of having mixed, generate polysilicon by regeneration purity at the discarded silicon materials more than the 5N or the material that contains the discarded silicon materials of purity more than 5N, and can use in the middle of the silicon member made that the etch processes device uses.
Can use the discarded silicon materials such as the focusing ring 21 that has been finished, ground loop 22, battery lead plate 31 in the middle of the manufacture method of the silicon member made that the etch processes device is used.
The object lesson of discarded silicon materials can be enumerated the object that produces in the manufacture process of the silicon member made that the etch processes device uses.For example, top (top tail) 100a of the ingot 100 that produces in the time of as shown in Figure 4, can using manufacturing silicon ingot (silicon rod, silicon ingot bar) or bottom (bottom tail) 100b, the inside cylindrical part 100c that digs through when making focusing ring 21 or ground loop 22, the outer peripheral portion 110 of ingot 100.Also the underproof objects of electrology characteristic such as producing damage or the object of defective equivalent damage, out-of-size object, resistance in the manufacture process can be used as discarded silicon materials in addition.
In the present embodiment, at recycling material described above namely in the discarded silicon materials, be that the material of silicon raw material is made the silicon member made with having mixed original material.By the flow chart among reference Fig. 1 its manufacture method is described.
And, can utilize manufacturing installation shown in Figure 3 50 to make the silicon member made.Manufacturing installation 50, built-in silica crucible 55 in cavity C, and at an upper portion thereof, bottom and sidepiece be provided with carbon heater 60.The polycrystalline silicon raw material that contains discarded silicon materials can be put in the crucible 55.Carbon heater 60 is used for the melting polycrystalline silicon raw material.Being provided with in the manufacturing installation 50 does not have illustrated cooling body yet, so that it can cool off the raw material in the crucible 55.
(manufacture method of the silicon member made that the etch processes device is used)
＜1. obsolete material recovery process 〉
In the middle of present embodiment, at first, the discarded silicon materials (step 105) such as battery lead plate 31 that reclaim the focusing ring that has been finished 21 described above, ground loop 22, have been finished.
＜2. clean operation 〉
Then, clean the discarded silicon materials (step 110) of above-mentioned recovery.Particularly, if etching solution is acid, then use HF, HNO 3And CH 3The COOH mixed solution carries out etching; If etching solution is alkali, then use KOH or KOH and H 2O 2Mixed solution carry out etching.When carrying out acid etching, the stain in the discarded silicon materials outside need to remove more than 60 microns, and when carrying out alkaline etching, then needs to remove more than 30 microns.
And, if the discarded silicon materials that use are not to come from the silicon member made that has been finished, but in manufacture process, produce, above-mentioned clean operation then can be omitted.
＜3. measure operation 〉
, measure electrology characteristic (in this enforcement state refer to resistance) and the quality of cleaned discarded silicon materials, and try to achieve the measurement operation (step 115) of the content of the impurity such as boron in the discarded silicon materials thereafter.Concrete measurement process as shown in Figure 2.In the middle of the silicon member made that the etch processes device is used, the required electrology characteristic (for example resistance) that its parts character determines can be variant.
For example; as shown in Figure 5; the situation of the P type polycrystalline silicon material of boron then can be applicable to focusing ring 21 (FR), battery lead plate 31(CEL if mixed), ground loop 22(G-Ring), the resistive target value of the silicon member made used of nearly all etch processes device such as ring protection device (Ring Protect) is 0.01 ~ 100 Ω cm(situation 4).
Wherein, for example, if the silicon member made is applied to focusing ring 21(FR), battery lead plate 31(CEL:O-CEL, I-CEL) situation, then the resistive target value of end article also can be 1 ~ 4 Ω cm(situation 1).
In addition, for example, if the silicon member made is applied to focusing ring 21(FR) situation, then the resistive target value of end article can be greater than 0 Ω cm and below 0.02 Ω cm (situation 2).
In addition, for example, if the silicon member made is applied to battery lead plate 31(CEL) situation, the resistive target value of end article can be 60 ~ 90 Ω cm(situations 3).
As above, preferably change optimal resistance value (desired value) according to the position, the function that are installed to the silicon member made of etch processes device 10.
(method of measurement)
Among Fig. 2, at first, measure the content (step 205) of impurity in the discarded silicon materials.When the manufacturing ingots such as the required resistance value of the silicon member made of using according to each etch processes device, add the impurity such as boron of ormal weight.In the above-mentioned measurement operation, by by measured resistance value such as four-point probe measurment instrument, by measurement qualities such as precision steelyards, try to achieve the content of this impurity.
Then, based on the desired value of the electrology characteristic (present embodiment middle finger resistance) of the impurity content of obtaining in the above-mentioned measurement operation and end article, can determine input amount, the input amount of silicon raw material and the input amount (step 210) of impurity of discarded silicon materials.
As previously described, in the middle of the silicon member made that the etch processes device is used, the required electrology characteristic that its parts character determines can be variant.In the middle of the following description, shown in upper figure among Fig. 5, the desired value of resistance value is that arbitrary value, purity in 1 ~ 4 Ω cm scope is at 99.999%(5N) more than, do not contain Si 3N 4, SiC, SiO 2Deng inclusion, the P type polysilicon of the boron that mixed is reproduced as the silicon member made and obtains.
Based on the desired value of this resistance, can be determined by the content of the weight of discarding silicon materials and impurity input amount, the input amount of silicon raw material and the input amount of impurity of discarded silicon materials.And in the situation of the amount that only just can be satisfied silicon by discarded silicon materials, the input amount that the silicon raw material also might occur is zero situation.In addition, contained impurity just can satisfy in the situation of amount of impurity in only by discarded silicon materials, and the impurity input amount also might occur is zero situation.
＜3. drop into, melting process
Get back to Fig. 1, next step, discarded silicon materials, silicon raw material and the impurity (dopant material) of determined input amount are put into (step 120: with reference to the A among Fig. 4) in the crucible 55, and be heated to about 1400 ℃ the material (step 125: with reference to the B among Fig. 4) in the fusion crucible 55 by carbon heater.
After this, by the not shown cooling body that is arranged at manufacturing installation 50, the material (step 130: with reference to the C among Fig. 4) in the cooling crucible 55.Since in the coated inner wall of crucible 55 release materials, when in the crucible during silicon materials solidification shrinkage, crucible 55 becomes with silicon materials and separates easily.Thus, the silicon materials in the time of can preventing that silicon materials from solidifying break.Release materials can be selected Si 3N 4, SiC, SiO 2, in the middle of the SiN any one.Release materials need to be chosen in the material that can not become particle (particle) source in the etch processes device.
Secondly, break crucible 55 and take out the silicon materials that obtained by discarded silicon materials regeneration, excise its surface (step 135: with reference to the D among Fig. 4).At the silicon materials near surface, because the effect of release materials might contain Si 3N 4, SiC, SiO 2, the material such as SiN.So, for the silicon materials that allow regeneration obtain do not contain the inclusion that becomes sources of particles, need removal surface, and so that do not use near crucible 55 silicon materials polycrystalline not to be used.Thus, the silicon materials that can obtain from regeneration remove manufacturing process, mix into, be coated on the release materials of crucible 55.
Here, in order to remove release materials, whole face (six faces) of the silicon materials that regeneration is obtained cuts 20mm separately.Excision for the silicon materials that solidify comparatively it is desirable to, and changes according to the kind of release materials.For example, if the kind of release materials is Si 3N 4, then the face that silicon materials are whole all excises, so that the part that is cut is below the 20mm apart from the surface.
In addition, for example, if the kind of release materials is SiO 2, then only excise the silicon materials upper surface, so that surperficial thereon, the part that is cut is below the 15mm apart from the surface.So, the cutting 15mm because the upper surface of material is contaminated, but the face beyond the upper surface is then processed excision 30 μ (μ m) by spraying (blast, sandblast).
Thus, can generate the polysilicon of purity more than 5N by discarded silicon materials.And, can allow it become the shape of regulation by the silicon ingot that produces in this operation being implemented machining etc., just can make the silicon member made that new etch processes device is used, for example, silicon focusing ring processed, silicon battery lead plate processed etc.
As described above, in the present embodiment, the discarded silicon materials of the silicon member made of using at the etch processes device by choice for use rightly, just can regenerate obtains being applied to the silicon member made of etch processes device.
Especially, in the middle of present embodiment, the silicon member made that can use by the etch processes device that has been finished of throwing away as trade waste in the regeneration prior art just can be made the silicon member made that the etch processes device that makes new advances is used.Thus, owing to contain discarded silicon materials in the raw material, material cost can be reduced, also resource can be effectively utilized.So, compare with prior art, can reduce the easily-consumed products cost of etch processes device, also can reduce the generation of trade waste, also more be of value to environment.
The size of the maximum that can produce with monocrystalline in the prior art, can arrive 460mm substantially.Afterwards, the bore of desired wafer size can become greatly, and its size can surpass the degree that just can generate with monocrystalline, at this moment, can only use polycrystalline.In addition, polycrystalline is more cheap than monocrystalline.And, in the middle of this execution mode, as discarded silicon materials, not only can use the polysilicon obsolete material for the etch processes device, and can use the polycrystalline silicon material for solar panel.So, by enlarging monocrystalline silicon material range of choice in addition, just can more effectively utilize the recycling material, reduce better material cost.
(etch processes device)
The structure of the etch processes device that the silicon member made that new regeneration obtains has been installed is described with reference to Fig. 6 at last.Fig. 6 is the longitudinal section of etch processes device.The structure of etch processes device 10 is the up and down parallel capacitive coupling type parallel flat Etaching device that has relatively also connected the plasma generation power supply of battery lead plate.
Etch processes device 10 has the process chamber cylindraceous 11 that forms through the aluminium of anodized etc. such as by the surface.Process chamber 11 is ground connection.Bottom in process chamber 11 by the insulation boards such as pottery 12, is provided with the roughly base supports platform 13 of round shape for the mounting wafer W.On base supports platform 13, be provided with the mounting table 20 that doubles as lower electrode.
In the inside of base supports platform 13, be provided with cryogen chamber 14, in cryogen chamber 14, can import cold-producing medium by the cold-producing medium ingress pipe, and by circulation, discharge from the refrigerant discharge leader road.And by mounting table 20, its cold and hot meeting is delivered to wafer W, and wafer W can be adjusted to desirable temperature thus.
Mounting table 20, its upside central portion is the convex circular plate shape, above it, is provided with the electrostatic chuck 15 of asking to join one diameter with wafer W with circle.By desirable direct voltage is added to the electrode that is disposed between the insulating material, electrostatic chuck 15 just can by such as Coulomb force, be used the Electrostatic Absorption wafer W.
In insulation board 12, base supports platform 13, mounting table 20, electrostatic chuck 15, the back side in wafer W, be formed with for the gas passage 16 of supplying with heat transfer medium (such as He gas etc.), by this heat transfer medium, the cold and hot of mounting table 20 can be passed to wafer W, and wafer W can be kept the temperature of regulation.
In the outer edge, upper end of mounting table 20, disposed the focusing ring 21 of ring-type, so that it can surround the wafer W that loads in electrostatic chuck 15.In addition, the periphery at insulation board 12 has disposed ground loop 22.Focusing ring 21, ground loop 22 be by the silicon manufacturing, silicon focusing ring 21 processed, ground loop 22 be the applicable etch processes device of renovation process is used in the present embodiment silicon member made it
Above mounting table 20, be relatively set with abreast top power supply 30 with mounting table 20.Top power supply 30 is supported on the top of process chamber 11.The top power supply is made of the electrode support 32 that is made of electric conducting material of battery lead plate 31 and supporting electric pole plate 31.31 of battery lead plates have a plurality of holes that spue, and form the opposite face of mounting table 20.In the etch processes device 10, this battery lead plate 31 is silicon systems, and this silicon battery lead plate 31 processed is one of silicon member mades that the applicable etch processes device of renovation process is used in the present embodiment.And upper electrode 30 has been connected not shown DC power supply.The direct current of direct-current power supply fails to be convened for lack of a quorum and is added to upper electrode 30, and flows to ground by ground loop 22.
The central authorities of the electrode support 32 in upper electrode 30 are provided with gas introduction port, and connecting at gas introduction port has the gas of processing supply source 33.Be used for the etching gas of plasma etch process etc. from 33 supplies of processing gas supply source.
In the bottom of process chamber 11, by blast pipe 34 connections exhaust apparatus 35 is arranged.Exhaust apparatus 35 has possessed turbomolecular pump equal vacuum pump, and its structure can be evacuated down to the inside of process chamber 11 the regulation pressure-lowering condition, for example is evacuated down to the following authorized pressure of 1Pa.In addition, the sidewall of process chamber 11 is provided with gate valve 36, under the state that this gate valve 36 is opened, can transport wafer W between adjacent loading interlocking vacuum (load-lock) chamber (not shown).
Upper electrode 30 has been connected the first high frequency electric source 40, has access to integrator 41 between its supply lines.The first high frequency electric source 40 has for example frequency of 27 ~ 150MHz scope.So, by applying the High frequency power of high frequency, can be in preferred disassociation state and highdensity plasma in process chamber 11 interior generations.
Mounting table 20 connections as lower electrode have the second high frequency electric source 50, have access to integrator 51 between its supply lines.The second high frequency electric source 50 has the frequency range lower than the first high frequency electric source 40.The High frequency power of the frequency by applying scope like this can not apply suitable ionization to the wafer W as processed substrate with causing damage.The frequency of the second high frequency electric source 50 comparatively it is desirable to, for example 1 ~ 20MHz scope.
More than an example of etch processes device 10 that silicon focusing ring 21 processed that the polysilicon that obtained by regeneration forms, silicon ground loop 22 processed, silicon battery lead plate 31 processed etc. are installed is illustrated.
More than, with reference to accompanying drawing preferred implementation of the present invention is had been described in detail, but the present invention is not only limited to described example.People as the general knowledge that has possessed the technical field under the present invention, in the claim scope, in the described technological thought category, clearly can expect various modifications or modification, for this type of example, certainly, also think to belong in the technical scope of the present invention.
For example, in the above-described embodiment, the silicon member made that the etch processes device is used is that the situation of silicon focusing ring processed, silicon ground loop processed, silicon battery lead plate processed is illustrated, but the silicon member made of using for the etch processes devices beyond these, and the present invention is applicable too.In addition, in the above-mentioned execution mode, obtain the content of impurity by measuring resistance and quality, still, also can obtain with other electrology characteristic the content of impurity.
In addition, for the regeneration of the silicon member made that utilizes discarded silicon materials, the traceability management is extremely important.For example, in manufacturing process, with the identifying information of cleaning the discarded silicon materials behind the discarded silicon materials and the identifying information of silicon raw material, what can determine to use is any discarded silicon materials (recycling material) and any silicon raw material (original material).

Claims (12)

1. the manufacture method of a silicon member made, it is for carrying out the manufacture method of the silicon member made used by the etch processes device that discarded silicon materials regeneration is made to being disposed at silicon member made in the etch processes device, the manufacture method of this silicon member made is characterised in that, comprises:
Described discarded silicon materials or the material that contains these discarded silicon materials are put into the operation that crucible melts;
Cooling and the operation of solidifying the described material that has melted;
The Partial Resection that will comprise at least upper surface of the material after described the solidifying generates the operation of polysilicon; With
Made the operation of described silicon member made by the polysilicon of described generation.
2. the manufacture method of silicon member made as claimed in claim 1 is characterized in that:
After described discarded silicon materials are clean with the etching solution of regulation, put in the crucible.
3. such as the manufacture method of claim 1 or siliceous parts claimed in claim 2, it is characterized in that:
Described discarded silicon materials or the material that contains these discarded silicon materials put in coated inner wall to be had in the described crucible of release materials of regulation kind.
4. the manufacture method of silicon member made as claimed in claim 3 is characterized in that:
The excision of the material after described the solidifying is, kind according to release materials, so that be cut described material is cut on the partial distance surface for the following mode of 20mm whole face, perhaps cut the upper surface of described material so that be cut partial distance surface for the following mode of 15mm, and the face beyond the upper surface is carried out inject process.
5. the manufacture method of silicon member made as claimed in claim 3 is characterized in that:
Described release materials is Si 3N 4, SiC, SiO 2, among the SiN any one.
6. the manufacture method of silicon member made as claimed in claim 1 or 2 is characterized in that:
The material that contains described discarded silicon materials comprises input amount and the impurity of the input amount of described discarded silicon materials, silicon raw material,
Impurity containing ratio by the described discarded silicon materials that measure to reclaim and based on the desired value of the resistance of the impurity content of measuring and end article, input amount, the input amount of described silicon raw material and the input amount of described impurity of the described discarded silicon materials of described crucible put in decision.
7. the manufacture method of silicon member made as claimed in claim 6 is characterized in that:
The desired value of the resistance of described end article is any one value in 1 ~ 4 Ω cm scope.
8. silicon member made that the etch processes device is used is characterized in that:
It is made by polysilicon,
This polysilicon is the P type polysilicon of boron of having mixed, and it is by to purity being discarded silicon materials more than 99.999% or to contain purity be that the material of the discarded silicon materials more than 99.999% carries out regeneration and generates.
9. the silicon member made used of etch processes device as claimed in claim 8 is characterized in that:
Described silicon member made is so that resistance is the mode of 0.01 ~ 100 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
10. the silicon member made used of etch processes device as claimed in claim 8 is characterized in that:
Described silicon member made is so that resistance is the mode of 1 ~ 4 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
11. the silicon member made that etch processes device as claimed in claim 8 is used is characterized in that:
Described silicon member made is so that resistance is the mode of 60 ~ 90 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
12. the silicon member made that etch processes device as claimed in claim 8 is used is characterized in that:
Described silicon member made is so that the mode of the resistance upper limit below 0.02 Ω cm, by the discarded silicon materials of regeneration or contain the material of discarded silicon materials and the polysilicon manufacturing that generates forms.
CN2012102284155A 2011-06-30 2012-07-02 Method for manufacturing silicon part and silicon part for etching treatment device Pending CN102856145A (en)

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