CN102853926A - 一种mems温度传感器的封装结构及其制造方法 - Google Patents
一种mems温度传感器的封装结构及其制造方法 Download PDFInfo
- Publication number
- CN102853926A CN102853926A CN2012103597532A CN201210359753A CN102853926A CN 102853926 A CN102853926 A CN 102853926A CN 2012103597532 A CN2012103597532 A CN 2012103597532A CN 201210359753 A CN201210359753 A CN 201210359753A CN 102853926 A CN102853926 A CN 102853926A
- Authority
- CN
- China
- Prior art keywords
- temperature sensor
- mems
- sealing cap
- oxide
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 238000007789 sealing Methods 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000010408 film Substances 0.000 claims description 26
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 6
- 239000005083 Zinc sulfide Substances 0.000 claims description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 6
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 6
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 6
- -1 magnesium aluminate Chemical class 0.000 claims description 6
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 239000011029 spinel Substances 0.000 claims description 6
- 229910052596 spinel Inorganic materials 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims description 6
- 229910007948 ZrB2 Inorganic materials 0.000 claims description 5
- VWZIXVXBCBBRGP-UHFFFAOYSA-N boron;zirconium Chemical compound B#[Zr]#B VWZIXVXBCBBRGP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 4
- 239000011777 magnesium Substances 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 230000005494 condensation Effects 0.000 claims 11
- 238000009833 condensation Methods 0.000 claims 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- JAEZJMNQWHJHLK-UHFFFAOYSA-N [O-2].[O-2].[Ti+4].[Cr](=O)(=O)([O-])[O-].[Mg+2] Chemical compound [O-2].[O-2].[Ti+4].[Cr](=O)(=O)([O-])[O-].[Mg+2] JAEZJMNQWHJHLK-UHFFFAOYSA-N 0.000 claims 2
- TWHBEKGYWPPYQL-UHFFFAOYSA-N aluminium carbide Chemical compound [C-4].[C-4].[C-4].[Al+3].[Al+3].[Al+3].[Al+3] TWHBEKGYWPPYQL-UHFFFAOYSA-N 0.000 claims 2
- ORCSMBGZHYTXOV-UHFFFAOYSA-N bismuth;germanium;dodecahydrate Chemical compound O.O.O.O.O.O.O.O.O.O.O.O.[Ge].[Ge].[Ge].[Bi].[Bi].[Bi].[Bi] ORCSMBGZHYTXOV-UHFFFAOYSA-N 0.000 claims 2
- 238000005260 corrosion Methods 0.000 claims 2
- 230000007797 corrosion Effects 0.000 claims 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 claims 2
- 229910001195 gallium oxide Inorganic materials 0.000 claims 2
- 229910052744 lithium Inorganic materials 0.000 claims 2
- 239000005297 pyrex Substances 0.000 claims 2
- 239000004408 titanium dioxide Substances 0.000 claims 2
- 229910001935 vanadium oxide Inorganic materials 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims 2
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 238000002347 injection Methods 0.000 claims 1
- 239000007924 injection Substances 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 238000012546 transfer Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 description 23
- 239000004020 conductor Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 5
- NLKBCHQISFHJPU-UHFFFAOYSA-N [O-2].[Ti+4].[Cr](=O)(=O)([O-])[O-].[Mg+2] Chemical compound [O-2].[Ti+4].[Cr](=O)(=O)([O-])[O-].[Mg+2] NLKBCHQISFHJPU-UHFFFAOYSA-N 0.000 description 4
- XZEMRTWXURURQM-UHFFFAOYSA-M [OH-].[K+].[O-2].[Fe+2] Chemical compound [OH-].[K+].[O-2].[Fe+2] XZEMRTWXURURQM-UHFFFAOYSA-M 0.000 description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 4
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- 239000005388 borosilicate glass Substances 0.000 description 4
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 229910052984 zinc sulfide Inorganic materials 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000033999 Device damage Diseases 0.000 description 1
- PIMDXYQKECXXRT-UHFFFAOYSA-M N.[O-2].[OH-].O.[Al+3] Chemical compound N.[O-2].[OH-].O.[Al+3] PIMDXYQKECXXRT-UHFFFAOYSA-M 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009461 vacuum packaging Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Landscapes
- Micromachines (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210359753.2A CN102853926B (zh) | 2012-09-24 | 2012-09-24 | 一种mems温度传感器的封装结构及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210359753.2A CN102853926B (zh) | 2012-09-24 | 2012-09-24 | 一种mems温度传感器的封装结构及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102853926A true CN102853926A (zh) | 2013-01-02 |
CN102853926B CN102853926B (zh) | 2014-09-24 |
Family
ID=47400711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210359753.2A Active CN102853926B (zh) | 2012-09-24 | 2012-09-24 | 一种mems温度传感器的封装结构及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102853926B (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104037331A (zh) * | 2013-03-07 | 2014-09-10 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104037354A (zh) * | 2013-03-07 | 2014-09-10 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104103771A (zh) * | 2013-04-09 | 2014-10-15 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制作方法 |
CN104167499A (zh) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN104167501A (zh) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN104167502A (zh) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN104425764A (zh) * | 2013-08-21 | 2015-03-18 | 株式会社日本显示器 | 有机场致发光显示装置及其制造方法 |
CN105067137A (zh) * | 2015-07-27 | 2015-11-18 | 武汉大学 | 一种基于mems系统的高灵敏度高分辨率的微型温度传感器及监测方法 |
CN105675917A (zh) * | 2016-01-19 | 2016-06-15 | 东南大学 | 一种热式风速传感器及其封装方法 |
CN106918397A (zh) * | 2015-12-28 | 2017-07-04 | 中芯国际集成电路制造(上海)有限公司 | Mems器件、mems温度传感器及各自的制作方法 |
CN107607210A (zh) * | 2017-09-28 | 2018-01-19 | 东南大学 | 一种基于超材料结构的温度传感器 |
CN109632121A (zh) * | 2018-12-10 | 2019-04-16 | 上海交通大学 | 一种基于导电通孔的温度传感器封装结构及制备方法 |
CN112504498A (zh) * | 2021-02-03 | 2021-03-16 | 南京高华科技股份有限公司 | 一种环状结构温度传感器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1796951A (zh) * | 2004-12-22 | 2006-07-05 | 中国科学院合肥智能机械研究所 | 柔性温度传感器阵列及其制备方法 |
US20080079142A1 (en) * | 2006-10-03 | 2008-04-03 | Seiko Epson Corporation | Wafer-level MEMS package and manufacturing method thereof |
CN202770545U (zh) * | 2012-09-24 | 2013-03-06 | 江苏物联网研究发展中心 | 一种mems温度传感器的封装结构 |
-
2012
- 2012-09-24 CN CN201210359753.2A patent/CN102853926B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1796951A (zh) * | 2004-12-22 | 2006-07-05 | 中国科学院合肥智能机械研究所 | 柔性温度传感器阵列及其制备方法 |
US20080079142A1 (en) * | 2006-10-03 | 2008-04-03 | Seiko Epson Corporation | Wafer-level MEMS package and manufacturing method thereof |
CN202770545U (zh) * | 2012-09-24 | 2013-03-06 | 江苏物联网研究发展中心 | 一种mems温度传感器的封装结构 |
Non-Patent Citations (1)
Title |
---|
DOUGLAS R.SPARKS,ETC.: "Chip-Level Vacuum Packaging of Micromachines Using Nanogetter", 《IEEE TRANSACTIONS ON ADVANCED PACKAGING》, vol. 26, no. 3, 31 August 2003 (2003-08-31), pages 277 - 282 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104037354A (zh) * | 2013-03-07 | 2014-09-10 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104037331A (zh) * | 2013-03-07 | 2014-09-10 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制备方法 |
CN104103771A (zh) * | 2013-04-09 | 2014-10-15 | 海洋王照明科技股份有限公司 | 有机电致发光器件及其制作方法 |
CN104167499A (zh) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN104167501A (zh) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN104167502A (zh) * | 2013-05-20 | 2014-11-26 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
CN104425764A (zh) * | 2013-08-21 | 2015-03-18 | 株式会社日本显示器 | 有机场致发光显示装置及其制造方法 |
CN104425764B (zh) * | 2013-08-21 | 2017-05-03 | 株式会社日本显示器 | 有机场致发光显示装置及其制造方法 |
CN105067137A (zh) * | 2015-07-27 | 2015-11-18 | 武汉大学 | 一种基于mems系统的高灵敏度高分辨率的微型温度传感器及监测方法 |
CN105067137B (zh) * | 2015-07-27 | 2017-11-28 | 武汉大学 | 一种基于mems系统的高灵敏度高分辨率的微型温度传感器及监测方法 |
CN106918397B (zh) * | 2015-12-28 | 2019-09-27 | 中芯国际集成电路制造(上海)有限公司 | Mems器件、mems温度传感器及各自的制作方法 |
CN106918397A (zh) * | 2015-12-28 | 2017-07-04 | 中芯国际集成电路制造(上海)有限公司 | Mems器件、mems温度传感器及各自的制作方法 |
CN105675917A (zh) * | 2016-01-19 | 2016-06-15 | 东南大学 | 一种热式风速传感器及其封装方法 |
CN105675917B (zh) * | 2016-01-19 | 2018-11-16 | 东南大学 | 一种热式风速传感器及其封装方法 |
CN107607210A (zh) * | 2017-09-28 | 2018-01-19 | 东南大学 | 一种基于超材料结构的温度传感器 |
CN109632121A (zh) * | 2018-12-10 | 2019-04-16 | 上海交通大学 | 一种基于导电通孔的温度传感器封装结构及制备方法 |
CN112504498A (zh) * | 2021-02-03 | 2021-03-16 | 南京高华科技股份有限公司 | 一种环状结构温度传感器 |
CN112504498B (zh) * | 2021-02-03 | 2021-04-20 | 南京高华科技股份有限公司 | 一种环状结构温度传感器 |
Also Published As
Publication number | Publication date |
---|---|
CN102853926B (zh) | 2014-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102853926B (zh) | 一种mems温度传感器的封装结构及其制造方法 | |
CN101329291B (zh) | 一种气敏传感器 | |
CN102798403B (zh) | Mems薄膜电容式多参数传感器的集成制造方法 | |
TW201542309A (zh) | 用於將二個載體裝置作共晶結合的方法 | |
CN201653604U (zh) | 一种压力传感器 | |
CN111003683B (zh) | 一种SiC高温压力传感器及其封装方法 | |
CN105136351B (zh) | 一种电容式压力传感器及其制备方法 | |
CN202770456U (zh) | Mems薄膜电容式多参数传感器结构 | |
CN105060238B (zh) | 基于超薄膜的电容式压力传感器的制作方法 | |
CN104535253A (zh) | 一种高温压力传感器及其加工方法 | |
TW201105972A (en) | Radio frequency identification based thermal bubble type accelerometer | |
CN107963609B (zh) | 一种基于阳极键合的全硅mems圆片级真空封装方法 | |
CN109141691A (zh) | 一种联动膜电容式压力敏感芯片及其制造方法 | |
CN105444931A (zh) | 基于牺牲层技术的soi压力敏感芯片及其制造方法 | |
CN109520632A (zh) | 基于微加工工艺的深低温温度传感器封装结构及制备方法 | |
CN106226361A (zh) | 一种新型微热板式气体敏感元件 | |
CN102928150B (zh) | 一种无引线封装的金属薄膜压力传感器及其制备方法 | |
CN106744651A (zh) | 一种电容式微电子气压传感器及其制备方法 | |
CN1220621C (zh) | 微机电系统后封装工艺 | |
CN105116019B (zh) | 一种电感式mems湿度传感器及其制备方法 | |
US11780727B2 (en) | Low-stress packaging structure for MEMS acceleration sensor chip | |
CN103364120A (zh) | 银锡共晶真空键合金属应变式mems压力传感器及其制造方法 | |
Welch et al. | Transient liquid phase (TLP) bonding for microsystem packaging applications | |
CN203519214U (zh) | 一种压力传感器的封装结构 | |
CN102082105A (zh) | 基于阳极键合工艺的热式风速风向传感器及其制备方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190722 Address after: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3, building 15, room 328 Patentee after: Beijing Zhongke micro Investment Management Co., Ltd. Address before: 214135 Jiangsu New District of Wuxi City Linghu Road No. 200 China Sensor Network International Innovation Park C building 4 floor Patentee before: Jiangsu Internet of Things Research & Develoment Co., Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210105 Address after: 610200 in the concentration area of Chengdu Xingu Industrial Park, Dongsheng Street, Shuangliu District, Chengdu City, Sichuan Province Patentee after: China core Microelectronics Technology Chengdu Co.,Ltd. Address before: 100029 room 328, building 15, 3 Beitucheng West Road, Chaoyang District, Beijing Patentee before: Beijing Zhongke micro Investment Management Co.,Ltd. |