CN102842663B - A kind of light emitting semiconductor device and preparation method thereof - Google Patents
A kind of light emitting semiconductor device and preparation method thereof Download PDFInfo
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- CN102842663B CN102842663B CN201110169369.1A CN201110169369A CN102842663B CN 102842663 B CN102842663 B CN 102842663B CN 201110169369 A CN201110169369 A CN 201110169369A CN 102842663 B CN102842663 B CN 102842663B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 238000009792 diffusion process Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000004062 sedimentation Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 229910001020 Au alloy Inorganic materials 0.000 claims description 2
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 2
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 238000005057 refrigeration Methods 0.000 abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 13
- 229910002601 GaN Inorganic materials 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000001816 cooling Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
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- 239000000463 material Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- -1 InGaN (InGaN) Chemical compound 0.000 description 1
- 230000005679 Peltier effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention provides a kind of light emitting semiconductor device, described light emitting semiconductor device comprises substrate and fixing upside-down mounting in the semiconductor luminous chip of surface; The upper surface of described substrate is provided with non-touching first conductivity type doped region and the second conductivity type doped region; One end of described first conductivity type doped region is provided with the first electrode, and for being connected with positive source, one end of the second conductivity type doped region is provided with the second electrode, for being connected with power cathode; Described semiconductor luminous chip is provided with third electrode and the 4th electrode, and wherein, third electrode contacts with suprabasil second conductivity type doped region, and the 4th electrode contacts with suprabasil first conductivity type doped region.Present invention also offers the preparation method of described light emitting semiconductor device.Light emitting semiconductor device provided by the invention, by integrated semiconductor refrigeration mechanism in semiconductor luminous chip, solves the integrated level of LED chip and the problem of thermal diffusivity simultaneously.
Description
Technical field
The invention belongs to technical field of semiconductors, particularly relate to a kind of light emitting semiconductor device and preparation method thereof.
Background technology
Along with improving constantly of LED unit brightness, its application is also more and more wider.But the significantly increase of brightness makes heat dissipation problem become its commercial biggest obstacle.If heat can not shed timely and effectively, device temperature will be caused too high, acceleration Embedding Material is aging, and speed-up chip light decay, shortens its useful life, and thermal stress can make LED chip damage simultaneously.Conventional cooling measure is directly encapsulated by LED chip on the substrate with high thermal conductivity coefficient, by convection current, radiation and heat transfer enhance heat effect.Common radiating mode generally has two kinds: passive heat radiation and active heat removal.Passive heat radiation is mainly used on the equipment of 1-3W, and therefore LED chip generally adopts the mode of active heat removal, and it is divided into again liquid-circulating cooling mode and solid (semiconductor) cooling mode.Wherein, liquid-circulating cooling mode can not be applicable to the adverse circumstances such as high temperature, vibrations, high to seal request, otherwise can damage equipment, and its area can not apply to greatly on miniature device.
CN201331035Y discloses a kind of high-power light emitting LED photo device of based semiconductor refrigeration radiating, successively that great power LED, active semiconductor chilling plate, fin is bonding from top to bottom, and the cold junction of active semiconductor chilling plate connects great power LED, hot junction connects fin, thus by active semiconductor chilling plate, the heat of great power LED is passed to fin quickly, thus reach the effect to LED heat radiation.But in this device, active semiconductor chilling plate is placed on LED chip, is therefore still unfavorable for the size reducing chip, improves integrated level.Therefore, there is contradiction between the integrated level of LED chip and heat dispersion.
Summary of the invention
The invention solves the integrated level of the LED chip existed in prior art, technical problem that heat dispersion exists contradiction.
The invention provides a kind of light emitting semiconductor device, described light emitting semiconductor device comprises substrate and fixing upside-down mounting in the semiconductor luminous chip of surface;
The upper surface of described substrate is provided with non-touching first conductivity type doped region and the second conductivity type doped region; One end of described first conductivity type doped region is provided with the first electrode, and for being connected with positive source, one end of the second conductivity type doped region is provided with the second electrode, for being connected with power cathode;
Described semiconductor luminous chip is provided with third electrode and the 4th electrode, and wherein, third electrode contacts with suprabasil second conductivity type doped region, and the 4th electrode contacts with suprabasil first conductivity type doped region.
Present invention also offers the preparation method of described light emitting semiconductor device, comprise the following steps:
A, on a surface of substrate, form non-touching first conductivity type doped region and the second conductivity type doped region, then form the first electrode in one end of the first conductivity type doped region, form the second electrode in one end of the second conductivity type doped region;
B, semiconductor luminous chip is fixed upside-down mounting on substrate, the third electrode of semiconductor luminous chip is contacted with the second conductivity type doped region of substrate, and the 4th electrode of semiconductor luminous chip contacts with the first conductivity type doped region of substrate.
Light emitting semiconductor device provided by the invention, by integrated semiconductor refrigeration mechanism in semiconductor luminous chip, therefore can not increase the size of chip, ensure its high integration; Simultaneously, in light emitting semiconductor device of the present invention, semiconductor luminous chip structure is as the cold junction of semiconductor refrigeration structure, and substrate is the hot junction of conductor refrigeration structure, therefore adopt LED operating current can driving chip luminous, semiconductor luminous chip self active refrigeration can be made again, avoid increasing extra current source, solve the integrated level of LED chip and the problem of thermal diffusivity simultaneously.
Accompanying drawing explanation
Fig. 1 is the structural representation of the first substrate provided by the invention.
Fig. 2 is the structural representation of semiconductor luminous chip provided by the invention.
Fig. 3 is the structural representation of the substrate of the embodiment of the present invention one.
Fig. 4 is the structural representation of the light emitting semiconductor device of the embodiment of the present invention one.
Fig. 5 is the structural representation of the substrate of the embodiment of the present invention two.
Fig. 6 is the structural representation of the light emitting semiconductor device of the embodiment of the present invention two.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The invention provides a kind of light emitting semiconductor device, its structure is as shown in Fig. 4 or 6, and described light emitting semiconductor device comprises substrate 10 and the semiconductor luminous chip of fixing upside-down mounting above substrate 10;
The upper surface of described substrate 10 is provided with non-touching first conductivity type doped region 11 and the second conductivity type doped region 12; One end of described first conductivity type doped region 11 is provided with the first electrode 13, and for being connected with positive source, one end of the second conductivity type doped region 12 is provided with the second electrode 14, for being connected with power cathode;
Described semiconductor luminous chip is provided with third electrode 9 and the 4th electrode 8, and wherein, third electrode 9 contacts with suprabasil second conductivity type doped region 12, and the 4th electrode 8 contacts with suprabasil first conductivity type doped region 8.
Described semiconductor luminous chip, comprise the epitaxial loayer 6 of substrate 1 and substrate 1 lower surface, epitaxial loayer 6 comprises resilient coating 2, first conductive-type semiconductor layer 3, active layer 4, second conductive-type semiconductor layer 5 and current-diffusion layer 7 from top to bottom, first conductive-type semiconductor layer 3 draws third electrode 9, current-diffusion layer 7 draws the 4th electrode 8.In Fig. 4, Fig. 6, semiconductor luminous chip upside-down mounting is on substrate 10, and therefore epitaxial loayer 6 is positioned at the lower surface of substrate 1.Fig. 2 is the structural representation of semiconductor luminous chip.
First conductivity type can be N-shaped, then the second conductivity type is p-type, or the first conductivity type is p-type, and the second conductivity type is N-shaped, is not particularly limited in the present invention.Below with the first conductivity type for N-shaped, the second conductivity type is p-type is example, is described further the operation principle of light emitting semiconductor device of the present invention.
In the course of work, first electrode is connected with positive source, second electrode is connected with power cathode, drive current to enter the first conductivity type doped region 11(and n-type region substrate 1 by the first electrode 13 from positive source), because the resistivity of substrate 1 is very high, electric current can through n-type region (i.e. the first conductivity type doped region 11) by the 4th electrode 8(and p-type electrode) enter semiconductor epitaxial layers, specifically comprise successively through current reflection layer 7, second conductive-type semiconductor layer 5(and p shape semiconductor layer), active layer 4, first conductive-type semiconductor layer 3(and n-type semiconductor layer), thus drive semiconductor luminous chip luminous.
The light part sent directly penetrates from the upper surface of transparent substrates 1, another part is from the upper surface outgoing of transparent substrates 1 after current-diffusion layer 7 reflects, and the high light transmittance of substrate 1 and the highly reflective of current-diffusion layer 7 make the light of semiconductor chip in the present invention extraction performance greatly improve.
Electric current arrives the first conductive-type semiconductor layer 3(and n-type semiconductor layer) after, by third electrode 9(and n-type electrode) enter the second conductivity type doped region 12(and p-type area on substrate 10), and return power cathode by the second electrode 14.
In the process, electric current is equivalent to flow to positive thermoelectric force region (i.e. the second conductivity type doped region 12) from subzero temperature difference potential region (i.e. the first conductivity type doped region 11), and maximum system energy rises, and absorbs heat.According to Peltier effect: when electric current flows through the contact of two different conductors formation, contact place can produce heat release and endothermic thermal event, and now the heat of n-type region, p-type area point of intersection is walked to form cold junction by current strap, and corresponding is semiconductor luminous chip structure; The heat taken away forms hot junction at the other end of n-type region, p-type area, and corresponding is substrate 10, thus by the carry heat of semiconductor luminous chip on substrate 10, achieves the active cooling of the light-emitting zone of semiconductor luminous chip.
In the present invention, the material of resilient coating 2, first conductive-type semiconductor layer 3, second conductive-type semiconductor layer 5 is based on III-V group nitride material of gallium nitride (GaN), InGaN (InGaN), aluminium gallium nitride alloy (AlGaN) and indium nitride gallium aluminium (AlGaInN), preferred gallium nitride (GaN).Substrate is the Sapphire Substrate that those skilled in the art commonly use.Under preferable case, the first conductive-type semiconductor layer 3 is N-shaped GaN, and active layer 4 is InGaN/GaN, and the second conductive-type semiconductor layer 5 is p-type GaN.
Current-diffusion layer 7 one aspect is used as electric current from the 4th electrode diffusion to the second conductive-type semiconductor layer 5, is used on the other hand reflecting the light that chip sends.In the present invention, current-diffusion layer 7 is various single metal layer conventional in prior art or more metal layers, such as, can be Ni and Ag.Third electrode is Ti/Al alloy, and the 4th electrode is Ni/Au alloy.
In the present invention, described substrate 10 is the hot junction of conductor refrigeration mechanism, for being passed to outside chip by the heat of semiconductor luminous chip.In the present invention, substrate 10 is various intrinsic Si conventional in prior art or insulating heat-conductive pottery.Wherein, the resistivity of intrinsic Si reaches 214000 ohm of * centimetre, has good electrical insulating property.
The first conductivity type doped region on substrate 10 and the second conductivity type doped region are the semiconductor of two different conduction-types, and such as the first conductivity type doped region can be N-shaped doping Si, and the second conductivity type doped region can be p-type doping Si.First electrode 13, second electrode 14, for being electrically connected with external power supply, directly adopting various metal electrodes conventional in prior art, such as, all can be Au.First electrode 12, second electrode 14 also can be connected with power supply respectively by contact conductor, is not particularly limited in the present invention.
For strengthening the radiating effect of light emitting semiconductor device of the present invention further, under preferable case, the lower surface of substrate 10 is also provided with heat sink (attached not shown).Described heat sink can adopt various heat sinks common in prior art, such as, can be heat-conducting metal, thermal conductive ceramic.Heat-conducting metal can adopt Cu, Al.The structure of heat sink is not particularly limited, such as, can be fin, also can be radiating block.
Present invention also offers the preparation method of described light emitting semiconductor device, comprise the following steps:
A, on a surface of substrate, form non-touching first conductivity type doped region and the second conductivity type doped region, then form the first electrode in one end of the first conductivity type doped region, form the second electrode in one end of the second conductivity type doped region;
B, semiconductor luminous chip is fixed upside-down mounting on substrate, the third electrode of semiconductor luminous chip is contacted with the second conductivity type doped region of substrate, and the 4th electrode of semiconductor luminous chip contacts with the first conductivity type doped region of substrate.
Wherein, the method preparing semiconductor luminous chip is: epitaxial buffer layer, the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer successively on substrate, then form current-diffusion layer, obtain prefabricated film on the second conductive-type semiconductor layer; Then the subregion of the one side of the current-diffusion layer of prefabricated film is etched, to exposing the first conductive-type semiconductor layer; The the first conductive-type semiconductor layer surface exposed after etching forms third electrode, forms the 4th electrode, obtain described semiconductor luminous chip on the current-diffusion layer surface of non-etch areas.
The method that substrate is prepared epitaxial loayer can adopt and well known to a person skilled in the art metallorganic chemical vapor deposition method (Metal-organicChemicalVaporDeposition, be called for short MOCVD) or molecular beam epitaxy (MolecularBeamEpitaxy is called for short MBE).
The method etched the surface portion region of prefabricated film can adopt and well known to a person skilled in the art inductively coupled plasma etching method (InductivelyCoupledPlasma, be called for short ICP) or reactive ion etching method (ReactiveIonEtching is called for short RIE).
In the present invention, be also included in the step of the fixing heat sink in another surface of substrate, described heat sink is heat-conducting metal, thermal conductive ceramic.
In the present invention, the method that a surface of substrate is formed the first conductivity type doped region and the second conductivity type doped region is ion implantation or sedimentation.The the first conductivity type doped region adopting ion implantation or sedimentation to be formed on substrate and the structure of the second conductivity type doped region are also slightly different, are described further light emitting semiconductor device provided by the invention and preparation method thereof below in conjunction with specific embodiment.
Embodiment one
(1) MOCVD or MBE extension successively in Sapphire Substrate 1 is adopted: GaN resilient coating 2, n-type GaN layer 3, InGaN/GaN layer 4, p-type GaN layer 5, then in p-type GaN layer 5, evaporation thickness to be the Ni layer of 0.1-10nm and thickness the be Ag layer of 1.5-150nm, as current-diffusion layer 7, namely obtains the prefabricated film of structure shown in Fig. 1.
(2) then adopt ICP or RIE method at BCl
3+ Cl
2under+Ar atmosphere, the N-shaped injection zone of prefabricated film being etched step, stopping to exposing n-type GaN layer 3.The p-type injection zone of current-diffusion layer 7 prepares Au electrode, obtains p-type electrode 8, the N-shaped injection zone in n-type GaN layer 3 prepares Ti/Al two-layer electrode, obtains n-type electrode 9, namely obtain the semiconductor luminous chip of structure shown in Fig. 2.
(3) the p-type injection zone of corresponding semiconductor luminous chip, the position of N-shaped injection zone on intrinsic Si substrate 10, adopt ion implantation to carry out N-shaped doping, p-type doping respectively, controling parameters makes carrier concentration 10
20cm
-3level, resistivity at 0.5 below Ω cm, can obtain n-type region 11, p-type area 12.Be not in contact with each other between n-type region 11, p-type area 12, spacing is large as far as possible, and the size of doped region is greater than the size of injecting electrode.Prepare Au electrode 13 in one end of n-type region 11, and keep Au electrode 13 not contact with p-type electrode 8; Prepare Au electrode 14 in one end of p-type area 12, and keep Au electrode 14 not contact with n-type electrode 9, as shown in Figure 3.
(4) semiconductor luminous chip inversion obtained for step (2) is bonded on substrate, ensure that p-type electrode 8 is aimed at the n-type region 11 on substrate 10 to contact, n-type electrode 9 is aimed at the p-type area 12 on substrate 10 and is contacted, then from extraction electrode lead-in wire the electrode 13,14 at two ends, for connecting external power, obtain the light emitting semiconductor device of structure shown in Fig. 4.
Embodiment two
(1) step (1) that employing is identical with embodiment one, (2) prepare semiconductor luminous chip.
(2) the p-type injection zone of corresponding semiconductor luminous chip, the position of N-shaped injection zone on insulating heat-conductive pottery 10, adopt sedimentation extension N-shaped silicon 11 and p-type silicon 12 respectively, thickness 100-200nm, carrier concentration is 10
20cm
-3level, resistivity is less than 0.5 Ω cm.Be not in contact with each other between N-shaped silicon 11 and p-type silicon 12, spacing is large as far as possible, and the extension size of N-shaped silicon 11 and p-type silicon 12 is greater than the size of injecting electrode.Prepare Au electrode 13 in one end of N-shaped silicon 11, and keep Au electrode 13 not contact with p-type electrode 8; Prepare Au electrode 14 in one end of p-type silicon 12, and keep Au electrode 14 not contact with n-type electrode 9, as shown in Figure 5.
(3) semiconductor luminous chip inversion is bonded on substrate, p-type electrode 8 is aimed at the N-shaped silicon 11 on substrate 10 and is contacted, n-type electrode 9 is aimed at the p-type silicon 12 on substrate 10 and is contacted, then from extraction electrode lead-in wire the electrode 13,14 at two ends, for connecting external power, obtain the light emitting semiconductor device of structure shown in Fig. 6.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a light emitting semiconductor device, is characterized in that, described light emitting semiconductor device comprises substrate and fixing upside-down mounting in the semiconductor luminous chip of surface;
The upper surface of described substrate is provided with non-touching first conductivity type doped region and the second conductivity type doped region; One end of described first conductivity type doped region is provided with the first electrode, and for being connected with positive source, one end of the second conductivity type doped region is provided with the second electrode, for being connected with power cathode;
Described semiconductor luminous chip is provided with third electrode and the 4th electrode, and wherein, third electrode contacts with the second conductivity type doped region on substrate, and the 4th electrode contacts with the first conductivity type doped region on substrate.
2. light emitting semiconductor device according to claim 1, it is characterized in that, described semiconductor luminous chip comprises the epitaxial loayer of substrate and substrate lower surface, epitaxial loayer comprises resilient coating, the first conductive-type semiconductor layer, active layer, the second conductive-type semiconductor layer and current-diffusion layer from top to bottom, first conductive-type semiconductor layer draws third electrode, current-diffusion layer draws the 4th electrode.
3. light emitting semiconductor device according to claim 2, is characterized in that, the first conductivity type is N-shaped, and the second conductivity type is p-type.
4. light emitting semiconductor device according to claim 3, it is characterized in that, substrate is Sapphire Substrate, resilient coating is GaN, and the first conductive-type semiconductor layer is N-shaped GaN, and active layer is InGaN/GaN, second conductive-type semiconductor layer is p-type GaN, current-diffusion layer is Ni and Ag, and third electrode is Ti/Al alloy, and the 4th electrode is Ni/Au alloy.
5. light emitting semiconductor device according to claim 3, it is characterized in that, substrate is intrinsic Si or insulating heat-conductive pottery, and the first conductivity type doped region is N-shaped doping Si, second conductivity type doped region is p-type doping Si, and the first electrode, the second electrode are Au.
6. light emitting semiconductor device according to claim 1, is characterized in that, the lower surface of substrate is also provided with heat sink, and described heat sink is heat-conducting metal or thermal conductive ceramic.
7. the preparation method of light emitting semiconductor device according to claim 1, comprises the following steps:
A, on a surface of substrate, form non-touching first conductivity type doped region and the second conductivity type doped region, then form the first electrode in one end of the first conductivity type doped region, form the second electrode in one end of the second conductivity type doped region;
B, semiconductor luminous chip is fixed upside-down mounting on substrate, the third electrode of semiconductor luminous chip is contacted with the second conductivity type doped region of substrate, and the 4th electrode of semiconductor luminous chip contacts with the first conductivity type doped region of substrate.
8. preparation method according to claim 7, is characterized in that, the method that a surface of substrate is formed the first conductivity type doped region and the second conductivity type doped region is ion implantation or sedimentation.
9. preparation method according to claim 7, it is characterized in that, the method preparing semiconductor luminous chip is: epitaxial buffer layer, the first conductive-type semiconductor layer, active layer and the second conductive-type semiconductor layer successively on substrate, then on the second conductive-type semiconductor layer, form current-diffusion layer, obtain prefabricated film; Then the subregion of the one side of the current-diffusion layer of prefabricated film is etched, to exposing the first conductive-type semiconductor layer; The the first conductive-type semiconductor layer surface exposed after etching forms third electrode, forms the 4th electrode, obtain described semiconductor luminous chip on the current-diffusion layer surface of non-etch areas.
10. preparation method according to claim 7, is characterized in that, be also included in the step of the fixing heat sink in another surface of substrate, described heat sink is heat-conducting metal or thermal conductive ceramic.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565377A (en) * | 2017-09-28 | 2018-01-09 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor chip structure |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588657A (en) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
| CN1828955A (en) * | 2006-01-24 | 2006-09-06 | 吴质朴 | Gallium nitride semiconductor chip with buffer electrode structure |
| CN2927321Y (en) * | 2006-06-14 | 2007-07-25 | 朱建钦 | Large-power semiconductor luminescent device |
| CN201331035Y (en) * | 2009-01-09 | 2009-10-21 | 中南大学 | High-power luminous LED illumination device based on semiconductor refrigeration heat radiation |
| CN101814562A (en) * | 2010-04-21 | 2010-08-25 | 哈尔滨工业大学 | LED with two-dimensional photonic crystals |
| CN102013386A (en) * | 2009-09-04 | 2011-04-13 | 日月光封装测试(上海)有限公司 | Heating tool in semiconductor encapsulating and routing process and method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW492202B (en) * | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
| TWI260795B (en) * | 2004-03-22 | 2006-08-21 | South Epitaxy Corp | Flip chip type- light emitting diode package |
| US20100006864A1 (en) * | 2008-07-11 | 2010-01-14 | Philips Lumileds Lighting Company, Llc | Implanted connectors in led submount for pec etching bias |
-
2011
- 2011-06-22 CN CN201110169369.1A patent/CN102842663B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588657A (en) * | 2004-07-02 | 2005-03-02 | 北京工业大学 | High anti-static high efficiency light-emitting diode and producing method |
| CN1828955A (en) * | 2006-01-24 | 2006-09-06 | 吴质朴 | Gallium nitride semiconductor chip with buffer electrode structure |
| CN2927321Y (en) * | 2006-06-14 | 2007-07-25 | 朱建钦 | Large-power semiconductor luminescent device |
| CN201331035Y (en) * | 2009-01-09 | 2009-10-21 | 中南大学 | High-power luminous LED illumination device based on semiconductor refrigeration heat radiation |
| CN102013386A (en) * | 2009-09-04 | 2011-04-13 | 日月光封装测试(上海)有限公司 | Heating tool in semiconductor encapsulating and routing process and method thereof |
| CN101814562A (en) * | 2010-04-21 | 2010-08-25 | 哈尔滨工业大学 | LED with two-dimensional photonic crystals |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107565377A (en) * | 2017-09-28 | 2018-01-09 | 中国科学院长春光学精密机械与物理研究所 | A kind of semiconductor chip structure |
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