CN102842590A - Image sensor and manufacturing method thereof - Google Patents
Image sensor and manufacturing method thereof Download PDFInfo
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- CN102842590A CN102842590A CN2012102661495A CN201210266149A CN102842590A CN 102842590 A CN102842590 A CN 102842590A CN 2012102661495 A CN2012102661495 A CN 2012102661495A CN 201210266149 A CN201210266149 A CN 201210266149A CN 102842590 A CN102842590 A CN 102842590A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000010276 construction Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 11
- 239000002184 metal Substances 0.000 abstract description 3
- 238000001179 sorption measurement Methods 0.000 abstract 2
- 239000011797 cavity material Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000243 photosynthetic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention provides an image sensor and a manufacturing method thereof, which can be used for improving the light adsorption efficiency. The image sensor is formed in a substrate with an insulating buried layer; the substrate comprises the insulating buried layer and a device layer on the surface of the insulating buried layer. A pixel circuit and a photodiode of the image sensor are formed in the device layer. The surface of the photodiode is provided with a first cover layer. The position on the other surface of the substrate, which corresponds to the first cover layer, is provided with a second cover layer. The second cover layer is a light incidence layer. The image sensor and the manufacturing method thereof have the advantages that incident light is repeatedly reflected, so that the incident light is repeatedly adsorbed in a light sensitive region, and thus, the light adsorption efficiency on the basis of a light sensitive unit of the image sensor is improved; and furthermore, due to the adoption of a back irradiation technology, the incident light is also avoided being shielded by a metal wiring layer and the quantum efficiency of the image sensor is improved.
Description
Technical field
The present invention relates to field of image sensors, relate in particular to a kind of imageing sensor and manufacturing approach thereof.
Background technology
SOI (Silicon-On-Insulator, the silicon on the dielectric substrate) technology is to have introduced one deck between at the bottom of top layer silicon and the backing to bury oxide layer.Through on insulator, forming semiconductive thin film, the SOI material had traditional body silicon materials incomparable advantage: can realize the dielectric isolation of components and parts in the integrated circuit, thoroughly eliminate the parasitic latch-up in the body silicon CMOS circuit; The integrated circuit that adopts this material to process has also that parasitic capacitance is little, integration density is high, speed is fast, technology is simple, short-channel effect is little and be specially adapted to advantages such as low-voltage and low-power dissipation circuit.
Imageing sensor is a kind ofly to convert optical imagery the semiconductor device of the signal of telecommunication into, generally is made up of photosensitive pixel and cmos signal treatment circuit.Common cmos image sensor is an active pixel type imageing sensor (APS) at present; Wherein be divided into three pipe imageing sensor (3T again; Comprise reset transistor, amplifier transistor and row selecting transistor) and four pipe imageing sensors (4T comprises transfering transistor, reset transistor, amplifier transistor and row selecting transistor), two big classes.
A kind of existing cmos image sensor pixel cell structure that is made on the SOI substrate is as shown in Figure 1, employing be to exhaust structure entirely, comprising: substrate 100, oxygen buried layer 110 and device layer 130.Device layer 130 comprises that photodiode 140, reset transistor 150, source electrode are followed transistor 160 and row selects transistor 170.The photosensitive area of this dot structure mainly is positioned at the PN junction depletion region of photodiode 140.Each transistor includes basic structures such as source electrode, grid and drain electrode.The position relation and the electricity annexation of above-mentioned each device please refer to accompanying drawing 1.
With reference to accompanying drawing 1, the operation principle of existing dot structure is: when starting working, at first reset transistor 150 grids are added high level; Make its conducting; During exposure, photodiode 140 is as the photoelectron collecting zone, when incident light shines; Produce electron hole pair, after accomplishing exposure and follow transistor 160 through source electrode and select transistor 170 that the integral voltage signal is read with going.So the value of output voltage has just reflected the power of light signal.
The shortcoming of the cmos image sensor image element circuit on the above-mentioned SOI of the being made in substrate is that the device layer 130 of SOI substrate is very thin; Usually have only dozens of micron even tens microns; The light path of incident light in photodiode 140 is very short, causes efficiency of light absorption and quantum efficiency low.Especially for the redness of wavelength greater than 600nm, orange-colored light, absorption efficiency are extremely low, and image quality is very undesirable; In addition, owing to adopt the front illuminated technology usually, irradiate light must be crossed certain thickness metal wiring layer before photosensitive area, make the part oblique incident ray be blocked, and had reduced the quantum efficiency of this dot structure.
Summary of the invention
Technical problem to be solved by this invention is, a kind of imageing sensor and manufacturing approach thereof are provided, and can improve the efficient of light absorption.
In order to address the above problem; The invention provides a kind of imageing sensor, be formed in the substrate that has insulating buried layer, the device layer on said insulated substrate buried regions and insulating buried layer surface; The image element circuit of said imageing sensor and photodiode are formed in the device layer; Be provided with first cover layer on the surface of said photodiode, and be provided with second cover layer in another position corresponding with first cover layer, surface of said substrate, said second cover layer is a light incident layer.
Optional, said substrate further comprises supporting layer, and said insulating barrier is arranged between supporting layer and the device layer, and said second cover layer further is arranged on said support layer surface; The thickness of said supporting layer is less than 5 μ m.
Optional, the said first tectal material is the reflection enhancement material; Said second cover layer is an anti-reflection film, or the said second tectal material is the single face transmission material, light outside dielectric layer the transmissivity in the dielectric layer greater than from the transmissivity outside dielectric layer in the dielectric layer; Said first cover layer and the second tectal thickness range are 1nm to 10nm.
Optional, further be provided with the light focus module on the said second tectal surface.
The present invention further provides a kind of manufacturing approach of imageing sensor, comprises the steps: to provide a substrate, and said substrate comprises supporting layer, the insulating barrier of support layer surface and the device layer of surface of insulating layer; The image element circuit of construction drawing image-position sensor and photodiode in device layer; The attenuate supporting layer; Form first cover layer on the surface of said photodiode, and form second cover layer on surface on the other side; Graphical first cover layer, the electricity through hole of formation photodiode; Forming photodiode is connected with electricity between the image element circuit.
Optional, in the step of said attenuate supporting layer, further be that supporting layer is thinned to a thickness; Thickness after the said supporting layer attenuate is less than 5 μ m.
Optional, further be included in the step that the said second tectal surface forms the light focus module.
The invention has the advantages that; Repeatedly reflection through incident ray; It is repeatedly absorbed in photosensitive area; Thereby improved efficiency of light absorption, further adopted the back side illuminaton technology also to avoid incident light to receive blocking of metal wiring layer, improved the quantum efficiency of imageing sensor based on the imageing sensor photosensitive unit.
Description of drawings
Accompanying drawing 1 is the cmos image sensor photosensitive unit structure on a kind of existing SOI of being made in substrate.
It shown in the accompanying drawing 2 the implementation step sketch map of the said method of embodiment of the present invention.
Accompanying drawing 3A is to shown in the step 3G being the process schematic representation of step shown in the accompanying drawing 2.
It shown in the accompanying drawing 4 schematic diagram in the embodiment of the present invention Fabry Perot chamber of adopting.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to imageing sensor provided by the invention and manufacturing approach thereof.
Step S20 provides a substrate, and said substrate comprises supporting layer, the insulating barrier of support layer surface and the device layer of surface of insulating layer; Step S21, the image element circuit of construction drawing image-position sensor and photodiode in device layer; Step S22, attenuate supporting layer to a thickness; Step S23 forms first cover layer on the surface of said photodiode, and forms second cover layer on surface on the other side; Step S24, graphical first cover layer, the electricity through hole of formation photodiode; Step S25 forms photodiode and is connected with electricity between the image element circuit; Step S26 forms the light focus module on the said second tectal surface.
Accompanying drawing 3A is to shown in the step 3G being the process schematic representation of step shown in the accompanying drawing 2.
Shown in the accompanying drawing 3A, refer step S20 provides a substrate 30, and said substrate 30 comprises supporting layer 301, the device layer 303 on the insulating barrier 302 on supporting layer 301 surfaces and insulating barrier 302 surfaces.The material of said supporting layer 301 and device layer 303 can be comprise monocrystalline silicon arbitrarily in common backing material in this area, and the material of supporting layer 301 and device layer 303 can be identical or different.The material of said insulating barrier 302 can be any one the common insulating material that comprises silica, silicon nitride and silicon oxynitride.The thickness range of device layer 303 normally 50nm between the 5 μ m; The thickness range of insulating barrier 302 normally 50nm between the 300nm.
Shown in the accompanying drawing 3B; Refer step S21; The image element circuit of construction drawing image-position sensor and photodiode 310 in device layer 303, image element circuit comprise that specifically reset transistor 150, source electrode are followed transistor 160 and row selects transistor 170 and electricity line each other.
In this embodiment, the thickness range of device layer 303 be 50nm to 500nm, photodiode 310 is horizontal PIN structure.Said photodiode 310 comprises P type doped region 311, and doping content is greater than 1 * 10
18Cm
-3 Full depletion region 312 adopt N type or p type impurity ion to inject, and doping content is less than 1 * 10
15Cm
-3, perhaps undope; N type doped region 313, its doping content is greater than 1 * 10
18Cm
-3P type doped region 311, full depletion region 312, N type doped region 313 are adjacent successively; The doping content of P type doped region 311 and N type doped region 313 than the doping content Senior Three one magnitude of full depletion region 312 or more than; And guarantee that full depletion region 312 is all exhausted, as effective photosensitive area of imageing sensor in this embodiment.(perpendicular to depth direction) length of full depletion region 312 is 1～8 μ m.
The operation principle of photodiode 310 roughly is can shift to P type doped region 311 under the effect at internal electric field at the photohole that full depletion region 312 is collected, and light induced electron also can be shifted to N type doped region 313 under the effect of internal electric field.So,, just can the photohole that be collected in the P type doped region 311 be let out ground end if with the P type doped region 311 in the above-mentioned photosensitive area; N type doped region 313 is connected to photoelectric signal processing circuit, can the light induced electron that be collected in the N type doped region 313 be read.
In this step, as optional embodiment, when device layer 303 thickness during greater than 2 μ m, photodiode 310 can be PN junction light sensitive diode or photogate structure.
Shown in the accompanying drawing 3C, refer step S22, attenuate supporting layer 301 to one thickness.Can adopt the method attenuate support substrates 301 of grinding attenuate or chemical corrosion.In this step, preferably with the reduced thickness of said supporting layer 301 to less than 5 μ m, to strengthen the transmitance of light from supporting layer 301.In other execution mode; Also can supporting layer 301 be removed to expose insulating barrier 302 fully; What such advantage was to utilize insulating barrier 302 stops effect certainly; Guarantee the evenness of erosional surface, in such execution mode, should guarantee that insulating barrier 302 and device layer 303 have enough mechanical strengths.
Shown in the accompanying drawing 3D, refer step S23 forms first cover layer 321 on the surface of said photodiode 310, and forms second cover layer 322 on surface on the other side.The material of said first cover layer 321 is the reflection enhancement material, and reflectivity can be silverskin greater than 80%, the equal 1nm to 10nm of thickness range; The material of said second cover layer 322 is the single face transmission material; Can be polyimide film; Or has a laminated construction that the different refractivity material is formed; Light outside substrate 30 transmissivity (usually greater than 70%) in the substrate 30 greater than the transmissivities (usually less than 30%) outside substrate 30 in substrate 30, the equal 1nm to 10nm of thickness range.
As optional execution mode, second cover layer 322 can also be anti-reflection film, specifically can be silicon nitride film, silicon oxynitride film, HfO
2Film, SiN
xO
y: H film etc.
Shown in the accompanying drawing 3E, refer step S24, graphical first cover layer 321 forms the electricity through hole of photodiode 310, comprises corresponding to the through hole 331 of P type doped region 311 with corresponding to the through hole 333 of N type doped region 313.Graphical technology can adopt photoetching common in this area and etching process, repeats no more here.
Shown in the accompanying drawing 3F, refer step S25 forms photodiode 310 and is connected with electricity between the image element circuit, comprises that ground connection and the N type doped region 313 of P type doped region 311 is connected with electricity between the reset transistor 150.The technology manufacture method that forms the electricity connection is those skilled in the art's known technology, does not give unnecessary details.
Shown in the accompanying drawing 3G, refer step S26 forms the light focus module on the said second tectal surface.Surface at said second cover layer 322 forms light focus module 390.Light focus module 390 comprises colour filter 391 and is positioned at the lenticule 392 on the colour filter 391.Colour filter 391 and lenticule 392 are the general component part of cmos image sensor.Its function and technology manufacture method are those skilled in the art's known technology, do not give unnecessary details.The wave-length coverage that can pass through of three kinds of colour filters of the red, green, blue that is noted that, must cover three maximum emission wavelengths of being derived in the above-mentioned derivation, i.e. λ=743nm, corresponding red color filter; λ=437nm, corresponding green color filter; λ=400nm, corresponding blue color filter.
Be the described imageing sensor of this embodiment shown in the accompanying drawing 3G; Be formed in the substrate 300 that has insulating buried layer 302 and device layer 303; Photodiode 310; Follow transistor 160 with reset transistor 150, the source electrode of image element circuit and row selects transistor 170 etc. to be formed in the device layer 303, the surface coverage of photodiode 310 has first cover layer 321, and surface coverage on the other side has second cover layer 322.If supporting layer 301 is all removed, then imageing sensor also can include only insulating barrier 302 and device layer 303.Said photodiode 310 comprises P type doped region 311, and doping content is greater than 1 * 10
18Cm
-3 Full depletion region 312 adopt N type or p type impurity ion to inject, and doping content is less than 1 * 10
15Cm
-3, perhaps undope; N type doped region 313, its doping content is greater than 1 * 10
18Cm
-3, said second cover layer 322 is a light incident layer.
This embodiment has been utilized the characteristics in Fabry Perot chamber, through the repeatedly reflection of incident ray, it is repeatedly absorbed in photosensitive area, thereby improved the efficiency of light absorption based on imageing sensor.
Concrete, if cavity length is L, lambda1-wavelength is λ, and incidence angle is θ, and the reflectivity of reflectance coating (the film reflectivity of supposing both sides is identical) is R, and cavity is that homogeneous refraction materials and refractive index are n, then the Fabry Perot chamber is for the emissivity R of this incident light
E(all energy of reflection light in cavity account for the ratio of incident light energy) does
Wherein
Be called fineness;
Be catoptrical the differing of adjacent two bundles.
If will make the total reflectivity R of cavity
EGet maximum, can solve:
(k gets natural number).And in image sensor application; Incidence angle θ is generally 0; So
is incident light when getting this wavelength, there is maximum reflectivity in the Fabry Perot chamber.
Notice; The cavity in the Fabry Perot chamber in this embodiment is actual to have three layers of (supporting layer 301, insulating barrier 302, device layer 303; In other embodiments,, then should have two-layer if supporting layer 301 is all removed), but not the homogeneous refraction materials.At this moment
N wherein
SBe the refractive index of supporting layer 301 with device layer 303 (be reduced to both and be same material), n
ORefractive index for insulating barrier 302.In fact, when incidence angle is a normal incidence, i.e. θ=0 o'clock,
Since in actual process, device layer 303 thickness L
1Thickness L with supporting layer 301
3Sum is much larger than insulating barrier 302 thickness L
2, so n
Eff≈ n
S=3.42, promptly the Fabry Perot cavity of this embodiment structure can equivalence be the device layer 303 medium cavity material of homogeneous.
Suitably get the value of cavity length L; Get under several different natural situation at k; Fabry Perot cavity configuration among the present invention can have maximum reflectivity simultaneously to the visible light of ruddiness, green glow and three wave bands of blue light, thereby incident light is repeatedly reflected in photosensitive area, repeatedly absorbs.In the present embodiment, cavity medium is a silicon, gets L=380nm, when k=3, and λ=743nm, corresponding ruddiness; When k=5, λ=437nm, corresponding green glow; When k=6, λ=400nm, corresponding blue light.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention; Can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (10)
1. imageing sensor; Be formed in the substrate that has insulating buried layer, the device layer on said insulated substrate buried regions and insulating buried layer surface, the image element circuit of said imageing sensor and photodiode are formed in the device layer; It is characterized in that; Be provided with first cover layer on the surface of said photodiode, and be provided with second cover layer in another position corresponding with first cover layer, surface of said substrate, said second cover layer is a light incident layer.
2. imageing sensor according to claim 1 is characterized in that said substrate further comprises supporting layer, and said insulating barrier is arranged between supporting layer and the device layer, and said second cover layer further is arranged on said support layer surface.
3. imageing sensor according to claim 2 is characterized in that, the thickness of said supporting layer is less than 5 μ m.
4. imageing sensor according to claim 1 is characterized in that, the said first tectal material is the reflection enhancement material; Said second cover layer is an anti-reflection film, or the said second tectal material is the single face transmission material, light outside dielectric layer the transmissivity in the dielectric layer greater than from the transmissivity outside dielectric layer in the dielectric layer.
5. according to claim 1 or 4 described imageing sensors, it is characterized in that said first cover layer and the second tectal thickness range are 1nm to 10nm.
6. imageing sensor according to claim 1 is characterized in that, further is provided with the light focus module on the said second tectal surface.
7. the manufacturing approach of an imageing sensor is characterized in that, comprises the steps:
One substrate is provided, and said substrate comprises supporting layer, the insulating barrier of support layer surface and the device layer of surface of insulating layer;
The image element circuit of construction drawing image-position sensor and photodiode in device layer;
The attenuate supporting layer;
Form first cover layer on the surface of said photodiode, and form second cover layer on surface on the other side;
Graphical first cover layer, the electricity through hole of formation photodiode;
Forming photodiode is connected with electricity between the image element circuit.
8. the manufacturing approach of imageing sensor according to claim 7 is characterized in that, in the step of said attenuate supporting layer, further is that supporting layer is thinned to a thickness.
9. the manufacturing approach of imageing sensor according to claim 8 is characterized in that, the thickness after the said supporting layer attenuate is less than 5 μ m.
10. method for making image sensor according to claim 7 is characterized in that, further is included in the step that the said second tectal surface forms the light focus module.
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| CN201210266149.5A CN102842590B (en) | 2012-07-30 | 2012-07-30 | Image sensor and manufacturing method thereof |
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|---|---|---|---|
| CN201210266149.5A CN102842590B (en) | 2012-07-30 | 2012-07-30 | Image sensor and manufacturing method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040253759A1 (en) * | 2003-06-12 | 2004-12-16 | Valery Garber | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
| CN101197387A (en) * | 2006-12-08 | 2008-06-11 | 索尼株式会社 | Solid-state imaging device, method of making the same, and imaging apparatus |
| CN101228631A (en) * | 2005-06-02 | 2008-07-23 | 索尼株式会社 | Solid imaging element and manufacturing method thereof |
| CN101667584A (en) * | 2008-09-05 | 2010-03-10 | 法国原子能委员会 | Light reflecting CMOS image sensor |
| CN102376724A (en) * | 2010-08-13 | 2012-03-14 | 台湾积体电路制造股份有限公司 | Antireflective layer for backside illuminated image sensor and method of manufacturing same |
-
2012
- 2012-07-30 CN CN201210266149.5A patent/CN102842590B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040253759A1 (en) * | 2003-06-12 | 2004-12-16 | Valery Garber | Steady-state non-equilibrium distribution of free carriers and photon energy up-conversion using same |
| CN101228631A (en) * | 2005-06-02 | 2008-07-23 | 索尼株式会社 | Solid imaging element and manufacturing method thereof |
| CN101197387A (en) * | 2006-12-08 | 2008-06-11 | 索尼株式会社 | Solid-state imaging device, method of making the same, and imaging apparatus |
| CN101667584A (en) * | 2008-09-05 | 2010-03-10 | 法国原子能委员会 | Light reflecting CMOS image sensor |
| CN102376724A (en) * | 2010-08-13 | 2012-03-14 | 台湾积体电路制造股份有限公司 | Antireflective layer for backside illuminated image sensor and method of manufacturing same |
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