CN102842498B - The finishing method on solar cell making herbs into wool surface and burnishing device - Google Patents
The finishing method on solar cell making herbs into wool surface and burnishing device Download PDFInfo
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- CN102842498B CN102842498B CN201210344047.0A CN201210344047A CN102842498B CN 102842498 B CN102842498 B CN 102842498B CN 201210344047 A CN201210344047 A CN 201210344047A CN 102842498 B CN102842498 B CN 102842498B
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Abstract
The invention provides a kind of finishing method and burnishing device of solar cell making herbs into wool surface, its row Wave coupling plasma technique excited based on high-power RF, do not rely on the surface state of crystal silicon chip, technological operation is very convenient, be easy to control, there is better reproducibility and reliability; There is not liquid making herbs into wool to damage the mechanical shock of silicon chip, improve the mechanical strength of solar battery sheet, greatly reduce breakage rate; And emission realizes easily via air-washer the discharge meeting environmental requirement, can meet the requirement of large area plasma uniform treatment.The method can the suede structure that causes of polishing initial stage making herbs into wool completely, and surface texture is evenly distributed, smooth, and this is next step polysilicon surface back electrode passivating technique and even improves photoelectric conversion efficiency and established necessary basis.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly relate to a kind of finishing method and burnishing device of solar cell making herbs into wool surface.
Background technology
Innovative technological innovation has promoted improving constantly of photovoltaic enterprise solar cell piece performance.At present, adopt various different new technology if selective emitter technology, becket are around the conversion efficiency to improve crystal-silicon battery slice such as through technology and back electrode passivating technique.Technically constantly segmentation and innovation, makes the photoelectric conversion efficiency of cell piece still have the suitable rising space.At present, the product line level of polycrystalline silicon battery plate photoelectric conversion efficiency reaches more than 17.1%, and the photoelectric conversion efficiency of the polycrystalline silicon battery plate of laboratory level has exceeded 18%.
Some domestic at present photovoltaic enterprises produce the back electrode passivating technique mainly atomic layer growth technology on line, namely at polysilicon back electrode surface coating skim Al
2o
3coating, on the one hand Al
2o
3coating effectively can fix the fixed charge on back electrode surface, reduces the Carrier recombination center at the back side, is conducive to the lifting improving photoelectric current; On the other hand, Al
2o
3coating itself as a back reflector, can promote the longwave absorption in luminous energy; In addition, Al
2o
3coating, between polysilicon matrix and back metal, has also relaxed the warpage etc. of cell piece.The employing of back electrode passivating technique makes the photoelectric conversion efficiency of cell piece improve about 0.2% ~ 0.5% on year-on-year basis.But, in the production process of cell piece, researchers find, wet method (acid solution method or soda solution grouting) the making herbs into wool structure of carrying out at the production cell piece initial stage produces some negative effects to back electrode passivation, therefore, need the suede structure by prepared by initial stage wet method aspect to carry out polishing, and then carry out atomic layer growth method coating Al
2o
3coating, to improve the passivation effect of back electrode.But it is quite undesirable that the isotropism feature due to wet process makes still to adopt wet process to carry out the effect of surface finish.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is the finishing method and the burnishing device that provide a kind of solar cell making herbs into wool surface, and the method can the suede structure that causes of polishing initial stage making herbs into wool completely, and surface texture is evenly distributed, smooth.
To achieve these goals, technical scheme of the present invention is as follows:
The invention discloses a kind of finishing method of solar cell making herbs into wool surface, wherein, adopt the row Wave coupling plasma of radio-frequency drive to carry out polishing to making herbs into wool surface.
Preferably, in the finishing method on above-mentioned solar cell making herbs into wool surface, the row Wave coupling plasma of described radio-frequency drive carries out polishing to making herbs into wool surface under reacting gas, and described reacting gas is selected from sulphur hexafluoride and oxygen, carbon tetrafluoride and oxygen, sulphur hexafluoride, Nitrogen trifluoride, Nitrogen trifluoride and oxygen or sulphur hexafluoride and chlorine.
The invention also discloses a kind of burnishing device of solar cell making herbs into wool surface, in order to carry out single-sided polishing to making herbs into wool surface, wherein, described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that single array is arranged, insert the metal tube that passes into cooling water in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity.
Preferably, in the burnishing device on above-mentioned solar cell making herbs into wool surface, a termination radio-frequency input signals of metal tube after described series connection, other end ground connection.
Preferably, in the burnishing device on above-mentioned solar cell making herbs into wool surface, described metal tube is silver-plated copper pipe.
The invention also discloses a kind of burnishing device of solar cell making herbs into wool surface, in order to carry out twin polishing to making herbs into wool surface, wherein, described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that double array is arranged, insert the metal tube that passes into cooling water in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity.
Preferably, in the burnishing device on above-mentioned solar cell making herbs into wool surface, a termination radio-frequency input signals of metal tube after described series connection, other end ground connection.
The invention also discloses a kind of burnishing device of solar cell making herbs into wool surface, wherein, described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that double array is arranged, the metal tube that one passes into cooling water is inserted in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity.
Preferably, in the burnishing device on above-mentioned solar cell making herbs into wool surface, a termination radio-frequency input signals of metal tube after described series connection, other end ground connection.
Preferably, in the burnishing device on above-mentioned solar cell making herbs into wool surface, described metal tube is silver-plated copper pipe.
Compared with prior art, the invention provides a kind of row Wave coupling plasma excited based on high-power RF to the device of crystalline silicon solar cell piece back electrode polishing and process.Compare conventional wet method, the method can be described as dry tumbling again, and it does not rely on the surface state (as the cleanliness factor on surface, the activity on surface or pyramid nucleation density etc.) of crystal silicon chip, its technological operation is very convenient, be easy to control, and has better reproducibility and reliability; Have again, because in dry method removal process, reactant and product are gaseous state, thus there is not liquid making herbs into wool to damage the mechanical shock of silicon chip, improve the mechanical strength of solar battery sheet, greatly reduce breakage rate, and emission realizes easily via air-washer the discharge meeting environmental requirement.In addition, relative to existing dry etching technology, owing to being the row Wave coupling plasma of single radio-frequency drive, can simply by increasing the number of discharge tube to increase machining area, and be aided with uniform stream arrangement, just can meet the requirement of large area plasma uniform treatment.The method can the suede structure that causes of polishing initial stage making herbs into wool completely, and surface texture is evenly distributed, smooth, and this is next step polysilicon surface back electrode passivating technique and even improves photoelectric conversion efficiency and established necessary basis.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Figure 1 shows that the vertical view of the burnishing device on solar cell making herbs into wool surface in preferred embodiment;
Figure 2 shows that the front view of the burnishing device on solar cell making herbs into wool surface in preferred embodiment;
Figure 3 shows that the left side view of the burnishing device on solar cell making herbs into wool surface in preferred embodiment;
Figure 4 shows that the right side view of the burnishing device on solar cell making herbs into wool surface in preferred embodiment;
Fig. 5 a and Fig. 5 b is the comparison of the surface topography of polysilicon chip before and after polishing respectively.
Embodiment
The embodiment of the invention discloses a kind of finishing method of solar cell making herbs into wool surface, it adopts the row Wave coupling plasma of radio-frequency drive to carry out polishing to making herbs into wool surface under certain reacting gas.
Described reacting gas is selected from the gas that sulphur hexafluoride and oxygen, carbon tetrafluoride and oxygen, sulphur hexafluoride, Nitrogen trifluoride, Nitrogen trifluoride and oxygen or sulphur hexafluoride and chlorine or other play etching effect.
The embodiment of the invention also discloses a kind of burnishing device of solar cell making herbs into wool surface, in order to carry out single-sided polishing to making herbs into wool surface, described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that single array is arranged, the metal tube that one passes into cooling water is inserted in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity.In this embodiment, glass tube can wear the two ends penetrated in vacuum cavity completely, also can wear the one end penetrated in vacuum cavity, also or is completely housed in vacuum cavity.
The embodiment of the invention also discloses a kind of burnishing device of solar cell making herbs into wool surface, in order to carry out twin polishing to making herbs into wool surface, wherein, described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that double array is arranged, insert the metal tube that passes into cooling water in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity.In this embodiment, glass tube can wear the two ends penetrated in vacuum cavity completely, also can wear the one end penetrated in vacuum cavity, also or is completely housed in vacuum cavity.
The embodiment of the invention also discloses a kind of burnishing device of solar cell making herbs into wool surface, wherein, described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that double array is arranged, the metal tube that one passes into cooling water is inserted in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity.In this embodiment, glass tube can wear the two ends penetrated in vacuum cavity completely, also can wear the one end penetrated in vacuum cavity, also or is completely housed in vacuum cavity.This embodiment may be used for single-sided polishing or the twin polishing on making herbs into wool surface, and when for single-sided polishing, silicon chip is positioned over the row top of glass tube or a below for next row glass tube; When for twin polishing, silicon chip is positioned between two row's glass tubes.
Be clearly and completely described the technical scheme in the embodiment of the present invention below, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Shown in ginseng Fig. 1 and Fig. 2, in the preferred embodiment, burnishing device 10 comprises vacuum cavity 11 and wears the quartz glass tube 12 penetrated in this vacuum cavity 11 two ends, glass tube 12 has two rows, and often row is provided with 4.For ensureing vacuum degree, have vacuum seal flange (not shown) between glass tube 12 and vacuum cavity 11, in every root glass tube 12, each insertion one can pass into the silver-plated copper pipe 13 of cooling water.The substrate frame 15 of carrying silicon chip 14 is provided with between two row's glass tubes 12.
Be connected in series between silver-plated copper pipe 13, as shown in Figure 3 and Figure 4, the input of radiofrequency signal is connected with one end of copper pipe by a radio frequency adaptation concrete electric connection mode, the direct ground connection of end.After regulating air pressure, passing into reacting gas, when when rf inputs incoming frequency is certain radio-frequency power of 13.56MHz, large-area plasma will be produced between two row's quartz glass tubes, by specific gas and suitable power and suitable processing time, just single/two-sided plasma polishing process can be carried out to silicon chip.
The embodiment of the present invention is achieved through the following technical solutions: silicon chip is put into vacuum chamber, is evacuated to 5*10
-1pa, then other gases such as sulphur hexafluoride or gas of nitrogen trifluoride are passed into, by controlling the Flow-rate adjustment vacuum chamber of gas to certain air pressure, utilize radio-frequency power supply to excite and produce the capable Wave coupling plasma of corresponding radio frequency, polishing etching is carried out to silicon chip, after having etched, stop air feed, 5x10 to be evacuated to
-1close extract system after Pa, then pass into nitrogen to vacuum chamber, treat that air pressure reaches 1 atmospheric pressure, open vacuum chamber afterwards, by silicon chip extracting.
In above-mentioned finishing method, its main active group decomposes by the electron impact source gas in plasma a large amount of halogen group etc. produced.These halogen atoms are easy to react with Si the halide generating volatile silicon, thus realize the polishing etching of silicon.
Above-mentioned burnishing device and method is utilized to carry out polishing test at different conditions:
Embodiment of the method 1:
P-type (100) crystal face pulling of crystals silicon chip is put into vacuum chamber, is evacuated to 5 × 10
-3pa, passes into SF6 with the flow of 100sccm, and after stable, regulate high threshold to make gas pressure in vacuum remain on 2Pa, then apply the radio-frequency power of 200W at rf inputs, the plasma discharge processing time is 10 minutes.But close radio-frequency power supply, stop air feed, close extract system, then inflated with nitrogen enters vacuum chamber to 1 atmospheric pressure, opens vacuum chamber, takes out polysilicon chip.Monocrystalline silicon piece after polishing average reflectance within the scope of 300 ~ 1200nm is greater than 35%.
Embodiment of the method 2:
P-type (100) crystal face pulling of crystals silicon chip is put into vacuum chamber, is evacuated to 5 × 10
-3pa, passes into NF3 with the flow of 100sccm, and after stable, regulate high threshold to make gas pressure in vacuum remain on 5Pa, then apply the radio-frequency power of 100W at rf inputs, the plasma discharge processing time is 5 minutes.Close radio-frequency power supply, stop air feed, be evacuated to 5 × 10
-3pa, close extract system, then inflated with nitrogen enters vacuum chamber to 1 atmospheric pressure, opens vacuum chamber, takes out silicon chip.Monocrystalline silicon piece after polishing average reflectance within the scope of 300 ~ 1200nm is greater than 37%.
Embodiment of the method 3:
P-type polysilicon is entered vacuum chamber, is evacuated to 5 × 10
-3pa, passes into SF6 with the flow of 45sccm and passes into O2 with the flow of 5sccm, and after stable, regulate high threshold to make gas pressure in vacuum remain on 5Pa, then apply the radio-frequency power of 200W at rf inputs, the plasma discharge processing time is 5 minutes.Close radio-frequency power supply, stop air feed, be evacuated to 5 × 10
-3pa, close extract system, then inflated with nitrogen enters vacuum chamber to 1 atmospheric pressure, opens vacuum chamber, takes out silicon chip.Fig. 5 a and Fig. 5 b is the comparison of the surface topography of polysilicon chip before and after polishing respectively, and the average reflectance within the scope of 300 ~ 1200nm of the polysilicon chip after polishing is greater than 36%.
In sum, the invention provides a kind of row Wave coupling plasma excited based on high-power RF to the device of crystalline silicon solar cell piece back electrode polishing and process.Compare conventional wet method, the method can be described as dry tumbling again, and it does not rely on the surface state (as the cleanliness factor on surface, the activity on surface or pyramid nucleation density etc.) of crystal silicon chip, its technological operation is very convenient, be easy to control, and has better reproducibility and reliability; Have again, because in dry method removal process, reactant and product are gaseous state, thus there is not liquid making herbs into wool to damage the mechanical shock of silicon chip, improve the mechanical strength of solar battery sheet, greatly reduce breakage rate, and emission realizes easily via air-washer the discharge meeting environmental requirement.In addition, relative to existing dry etching technology, owing to being the row Wave coupling plasma of single radio-frequency drive, can simply by increasing the number of discharge tube to increase machining area, and be aided with uniform stream arrangement, just can meet the requirement of large area plasma uniform treatment.The method can the suede structure that causes of polishing initial stage making herbs into wool completely, and surface texture is evenly distributed, smooth, and this is next step polysilicon surface back electrode passivating technique and even improves photoelectric conversion efficiency and established necessary basis.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in each execution mode also through appropriately combined, can form other execution modes that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.
Claims (7)
1. the finishing method on a solar cell making herbs into wool surface, it is characterized in that: adopt the row Wave coupling plasma of radio-frequency drive to carry out polishing to making herbs into wool surface, adopt row ripple metal tube mode, metal tube is that single array or double array are arranged, metal tube in being connected in series, a termination radio-frequency input signals of metal tube after series connection, other end ground connection, by increasing the number of discharge tube to increase machining area, uniform treatment large area plasma.
2. the finishing method on making herbs into wool surface according to claim 1, it is characterized in that: the row Wave coupling plasma of described radio-frequency drive carries out polishing to making herbs into wool surface under reacting gas, described reacting gas is selected from sulphur hexafluoride and oxygen, carbon tetrafluoride and oxygen, sulphur hexafluoride, Nitrogen trifluoride, Nitrogen trifluoride and oxygen or sulphur hexafluoride and chlorine.
3. one kind realizes the burnishing device of method described in claim 1, in order to carry out single-sided polishing to making herbs into wool surface, it is characterized in that: described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that single array is arranged, the metal tube that one passes into cooling water is inserted in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity; A termination radio-frequency input signals of metal tube after described series connection, other end ground connection.
4. burnishing device according to claim 3, is characterized in that: described metal tube is silver-plated copper pipe.
5. one kind realizes the burnishing device of method described in claim 1, in order to carry out twin polishing to making herbs into wool surface, it is characterized in that: described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that double array is arranged, the metal tube that one passes into cooling water is inserted in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity; A termination radio-frequency input signals of metal tube after described series connection, other end ground connection.
6. one kind realizes the burnishing device of method described in claim 1, it is characterized in that: described burnishing device comprises vacuum cavity and wears at least one glass tube penetrated on described vacuum cavity at least partly, described glass tube is that double array is arranged, the metal tube that one passes into cooling water is inserted in each glass tube, be connected in series between metal tube, be tightly connected between glass tube and vacuum cavity; A termination radio-frequency input signals of metal tube after described series connection, other end ground connection.
7. burnishing device according to claim 6, is characterized in that: described metal tube is silver-plated copper pipe.
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