CN102832539A - Manufacturing method of GaN substrate laser diode - Google Patents
Manufacturing method of GaN substrate laser diode Download PDFInfo
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- CN102832539A CN102832539A CN2012103534266A CN201210353426A CN102832539A CN 102832539 A CN102832539 A CN 102832539A CN 2012103534266 A CN2012103534266 A CN 2012103534266A CN 201210353426 A CN201210353426 A CN 201210353426A CN 102832539 A CN102832539 A CN 102832539A
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Abstract
The invention discloses a manufacturing method of a GaN substrate laser diode. The manufacturing method comprises the following steps of: forming a GaN substrate and successively depositing a p-type coating layer, a p-type light guide layer, an active layer, an n-type blocking layer, an n-type light guide layer and an n-type coating layer, wherein the method for forming the GaN substrate comprises the following steps of: putting a GaN wafer into a high-temperature and high-pressure device, heating and pressurizing the GaN wafer with the heating temperature being 820-880 DEG C and the applied pressure being 4.1-4.6GPa, and maintaining for 10-15 minutes; stopping heating and pressurizing so that the GaN wafer is restored to normal temperature and normal pressure; and annealing for 20-30 minutes in the high-temperature and high-pressure device, and taking out the GaN wafer. The manufacturing method disclosed by the invention has the advantages that the crystal defect density of the laser diode substrate can be obviously reduced, and the performance and the service life of the laser diode are improved.
Description
Technical field
The present invention relates to a kind of manufacturing approach of laser diode.
Background technology
Laser diode (LD) is a kind ofly to form diode by semi-conducting material, and its basic structure comprises substrate and is deposited on P/N type coating layer, active layer and the P/N type coating layer on the substrate successively, and the ohmic contact on N type and the P type coating layer.Substrate has important effect as the ground of this mansion of LD.Sapphire is a kind of LD substrate commonly used, but because the lattice and the thermal stress mismatch of the hetero epitaxial layer on itself and its, the heating back causes device failure because the degrees of expansion difference can be burst apart.Other one type of LD substrate comprises GaN, GaAs, semi-conducting materials such as InP.Generally all can comprise various defectives in the above-mentioned semi-conducting material as substrate, for example dislocation, gap or room etc., defective can cause the crystal strain, the strain meeting causes the quality of epitaxial loayer on the substrate and performance to reduce, and causes lifetime of LD to shorten.For many years, along with development of semiconductor, process those skilled in the art studying for a long period of time and putting into practice, and have formed comparatively perfect crystal growth technique flow process, have reduced the defect concentration that forms in the semiconductor substrate materials growth course.But people also hope to obtain the lower substrate of defect concentration, make the laser diode that performance is better, the life-span is longer.How further to reduce or eliminate defective and become this area urgent problem.
Summary of the invention
In order to overcome the defective that exists in the prior art, the invention provides a kind of manufacturing approach of GaN substrate laser diode, this method can significantly reduce the defect concentrations in crystals in the laser diode substrate, improves the performance and the life-span of laser diode.
GaN substrate laser diode of the present invention comprises the p-GaN substrate, on substrate, has deposited p type coating layer, p type photoconductive layer and active layer successively, wherein,
P type coating layer is p-Al
aIn
bGa
1-a-bN, 0≤a wherein, b, a+b≤1;
P type photoconductive layer is p-Al
cIn
dGa
1-c-dN, 0≤c wherein, d, c+d≤1;
Active layer is the p-Al of superlattice structure
eIn
fGa
1-e-fN/p-AI
gIn
hGa
1-g-hThe N multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
On active layer 4, also deposited n type barrier layer, n type photoconductive layer 6 and n type coating layer 7 successively, wherein n type barrier layer 5 is n-Al
iIn
jGa
1-i-jN, n type photoconductive layer 6 is n-Al
kIn
1Ga
1-k-1N, n type coating layer 7 is n-Al
mIn
nGa
1-m-nN, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
The manufacturing approach of GaN substrate laser diode of the present invention comprises the steps, at first forms the GaN substrate, secondly on substrate, has deposited p type coating layer, p type photoconductive layer, active layer, n type barrier layer, n type photoconductive layer and n type coating layer successively.
The method that wherein forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, in high temperature high pressure device, add transmission medium, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, heating-up temperature is 820～880 ℃, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stop heating, make the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
Description of drawings
Fig. 1 is the structural representation of GaN substrate laser diode of the present invention.
Embodiment
Describe the present invention below in conjunction with accompanying drawing and specific embodiment, but not as to qualification of the present invention.
Fig. 1 shows the structural representation of laser diode of the present invention.It comprises p-GaN substrate 1, on substrate 1, has deposited p type coating layer 2, p type photoconductive layer 3 and active layer 4 successively.
P type coating layer 2 is p-Al
aIn
bGa
1-a-bN, p type photoconductive layer 3 is p-Al
cIn
dGa
1-c-dN, 0≤a wherein, b, c, d, a+b, c+d≤1.
Coating layer 2 also can be p-Al
aIn
bGa
1-a-bThe N superlattice.
Active layer 4 is p-Al of superlattice structure
eIn
fGa
1-e-fN/p-AI
gIn
hGa
1-g-hThe N multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
On active layer 4, also deposited n type barrier layer 5, n type barrier layer 5 is n-Al
iIn
jGa
1-i-jN is n type photoconductive layer 6 and n type coating layer 7 on it, and wherein n type photoconductive layer 6 is n-Al
kIn
1Ga
1-k-1N, n type coating layer 7 is n-Al
mIn
nGa
1-m-nN, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
N type coating layer 7 also can be p-Al
mIn
nGa
1-m-nThe N superlattice.
In a preferred embodiment, all the band gap than active layer is big for the band gap on coating layer, photoconductive layer and n type barrier layer.
In a further advantageous embodiment, the band gap of photoconductive layer is littler than the band gap of coating layer, and the band gap on n type barrier layer is bigger than the band gap of coating layer.
N type contact layer 8 can be set on n type coating layer 7, and n type contact layer 8 can be n-Al
oIn
pGa
1-o-pN, 0≤o wherein, p, o+p≤1, the band gap of n type contact layer is bigger than the band gap of active area, and is littler than the band gap of coating layer.
N type contact layer 8 can also be n
+-Al
yIn
zGa
1-y-zThe N superlattice, 0≤y wherein, z, y+z≤1.
Etch structures n contact layer, coating layer, active layer and optional p contact layer through this device form mesa structure.Table top is enough deeply extending at least under the active layer, and can extend to the topmost portion of substrate always.
In order to improve the electricity restriction and to reduce threshold current, can pass through peripheral etching one ridge structure of contact layer, and get in the uppermost coating layer.After corrosion formed bar shaped table top and ridge structure, the formation passivation layer was with the side of table top and ridge but not the top passivation of ridge.Passivation layer can comprise SiO
2Perhaps SiN
x, can deposit through methods such as thermal evaporation, electron beam evaporation, sputters.
Then, on top surface (n type) and basal surface (p type), form n type Metal Contact 9 and p type Metal Contact 10 respectively.N type Metal Contact 9 is preferably nickel-billon, and p type Metal Contact 10 is preferably Ti-Al alloy.It can form through any method known in the art, for example sputtering sedimentation or electron-beam evaporation.The temperature that above-mentioned contact is annealed between about 400 ℃ to 950 ℃ promptly constitutes ohmic contact.
At last, at in-plane cutter spare, to confirm the length dimension of laser cavity perpendicular to above-mentioned ridge structure.The length of laser cavity at 100 μ m between the 2000 μ m.
Described the device architecture of p type substrate above, the device architecture of n type substrate is opposite with it, p-contact layer and n-contact layer and p-coating layer and n-coating layer is put upside down respectively get final product.
The manufacturing approach of laser diode of the present invention comprises the steps, at first forms the GaN substrate, secondly on substrate, has deposited p type coating layer, p type photoconductive layer, active layer, n type barrier layer, n type photoconductive layer and n type coating layer successively.
The method that wherein forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, in high temperature high pressure device, add transmission medium, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, heating-up temperature is 820～880 ℃, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes; The moulding pressure here may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 ℃/minute, and compression rate is 0.2～0.3GPa/ minute.
(3) stop heating, make the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
The present invention has carried out the experiment of 50 groups of different temperatures and pressure limit, and the GaN wafer carried out high temperature high pressure process.Experimental data shows; It is 820～880 ℃ that the GaN wafer is implemented heating-up temperature; After moulding pressure was the high temperature high pressure process and annealing of 4.1 ~ 4.6GPa, 20～30% before the density in its dislocation and space is reduced to and handles explained that this method has obviously reduced the defect concentration in the wafer.Experimental data also shows; The defect concentration of handling the back wafer and heating-up temperature, moulding pressure are relevant; And it mainly acts on temperature range and pressure limit; But heating, pressurization and release speed also to its effect of minimizing of defect concentration, have been put down in writing preferred temperature and pressure scope in the preceding text, and preferred heating, pressurization and release speed.Cooling need not adopted specific process, stops to heat the back natural cooling and gets final product.GaN wafer after employing is handled has increased disruptive field intensity as the laser diode that substrate forms, and has reduced electric leakage, has increased thermal conductivity, and the light emission effciency is higher, and reliability is bigger.
The high temperature high pressure device that is used to handle wafer of the present invention can adopt top, existing two sides and polyhedron high-pressure installation, and the polyhedron high-pressure installation comprises that hexahedron presses chamber device and octahedra pressure chamber device.The quiet high-pressure installation of big cavity is pushed up on the preferred two sides of adopting, and abbreviates the two sides as and pushes up big press.The shell of this device and the material of depression bar are steel alloy, and pressing the material of anvil is tungsten carbide.Adopting this two sides to push up the maximum pressure that big press can reach is 7GPa.Polyhedron high-pressure installation and diamond opposed anvils ultra-high pressure apparatus are low though its maximum pressure is compared, because its cavity volume is big, the diameter of handling sample is suitable for handling substrate wafer from about ten centimetres.
In this high-pressure installation, be provided with electric calorifie installation, it provides the heating heat through heating wire, to heating wafer after the electric calorifie installation energising.Heating-up temperature reaches as high as 1700 degrees centigrade.
Pressure medium is sodium chloride (NaCl), magnesia (MgO) or liquid nitrogen, and this medium can make pressure be evenly distributed on the crystal, makes non-isotropy stress minimum.
NaCl and MgO are low shearing strength solid, and its coefficient of internal friction is lower than 0.2, can well pressure transmission, play heat insulation effect simultaneously, and be beneficial to warming and pressurizing.Liquid nitrogen can be restrained the decomposition of GaN when heating and annealing when playing the pressure transmission effect.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (5)
1. a GaN substrate laser diode comprises the p-GaN substrate, on substrate, deposits p type coating layer, p type photoconductive layer and active layer successively, it is characterized in that,
P type coating layer is p-Al
aIn
bGa
1-a-bN, 0≤a wherein, b, a+b≤1;
P type photoconductive layer is p-Al
cIn
dGa
1-c-dN, 0≤c wherein, d, c+d≤1;
Active layer is the p-Al of superlattice structure
eIn
fGa
1-e-fN/p-AI
gIn
hGa
1-g-hThe N multiple quantum well layer, 0≤e wherein, f, g, h, e+f, g+h≤1.
2. GaN deposition laser diode as claimed in claim 1 is characterized in that, on active layer, also deposits n type barrier layer, n type photoconductive layer and n type coating layer successively.
3. GaN deposition laser diode as claimed in claim 2 is characterized in that n type barrier layer is n-Al
iIn
jGa
1-i-jN, n type photoconductive layer is n-Al
kIn
1Ga
1-k-1N, n type coating layer is n-Al
mIn
nGa
1-m-nN, 0≤i wherein, j, k, l, m, n, i+j, k+1, m+n≤1.
4. the manufacturing approach of a GaN substrate laser diode comprises the steps,
At first form the GaN substrate, secondly on substrate, deposited p type coating layer, p type photoconductive layer, active layer, n type barrier layer, n type photoconductive layer and n type coating layer successively, it is characterized in that,
The method that forms the GaN substrate comprises the steps:
(1) at normal temperatures and pressures, the GaN wafer is put into high temperature high pressure device, in high temperature high pressure device, add transmission medium, this transmission medium is NaCL and liquid nitrogen;
Pressurization when (2) the GaN wafer being heated, being heated to temperature is 820～880 ℃, being forced into pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes;
(3) stop heating, make the GaN wafer be cooled to normal temperature; Slowly release makes the GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute;
(4) in high temperature high pressure device, annealed 20～30 minutes after, take out the GaN wafer.
5. the manufacturing approach of GaN substrate laser diode as claimed in claim 4 is characterized in that, the rate of heat addition is 100 ℃/minute in the step (2), and compression rate is 0.2～0.3GPa/ minute.
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| CN201210353426.6A CN102832539B (en) | 2012-09-20 | 2012-09-20 | Manufacturing method of GaN substrate laser diode |
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|---|---|---|---|
| CN201210353426.6A CN102832539B (en) | 2012-09-20 | 2012-09-20 | Manufacturing method of GaN substrate laser diode |
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| CN102832539B CN102832539B (en) | 2014-07-30 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746050A (en) * | 2014-01-26 | 2014-04-23 | 南通明芯微电子有限公司 | Method for manufacturing p-type GaAs-based laser diode |
| CN103779456A (en) * | 2014-01-26 | 2014-05-07 | 南通明芯微电子有限公司 | Method for manufacturing N type GaAs-based semiconductor light emitting diode |
| CN110581439A (en) * | 2018-06-01 | 2019-12-17 | 全新光电科技股份有限公司 | Laser diode with defect blocking layer |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503991A (en) * | 2001-01-16 | 2004-06-09 | ���﹫˾ | Group III nitride LED with undoped cladding layer |
| CN1515036A (en) * | 2001-06-13 | 2004-07-21 | ���µ�����ҵ��ʽ���� | Nitride semiconductor, production method therefor and nitride semiconductor element |
| US20100108985A1 (en) * | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
| CN102544290A (en) * | 2010-12-27 | 2012-07-04 | 财团法人工业技术研究院 | Nitirde semiconductor light emitting diode |
-
2012
- 2012-09-20 CN CN201210353426.6A patent/CN102832539B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503991A (en) * | 2001-01-16 | 2004-06-09 | ���﹫˾ | Group III nitride LED with undoped cladding layer |
| CN1515036A (en) * | 2001-06-13 | 2004-07-21 | ���µ�����ҵ��ʽ���� | Nitride semiconductor, production method therefor and nitride semiconductor element |
| US20100108985A1 (en) * | 2008-10-31 | 2010-05-06 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
| CN102544290A (en) * | 2010-12-27 | 2012-07-04 | 财团法人工业技术研究院 | Nitirde semiconductor light emitting diode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746050A (en) * | 2014-01-26 | 2014-04-23 | 南通明芯微电子有限公司 | Method for manufacturing p-type GaAs-based laser diode |
| CN103779456A (en) * | 2014-01-26 | 2014-05-07 | 南通明芯微电子有限公司 | Method for manufacturing N type GaAs-based semiconductor light emitting diode |
| CN110581439A (en) * | 2018-06-01 | 2019-12-17 | 全新光电科技股份有限公司 | Laser diode with defect blocking layer |
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| CN102832539B (en) | 2014-07-30 |
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