CN102832539B - Manufacturing method of GaN substrate laser diode - Google Patents
Manufacturing method of GaN substrate laser diode Download PDFInfo
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- CN102832539B CN102832539B CN201210353426.6A CN201210353426A CN102832539B CN 102832539 B CN102832539 B CN 102832539B CN 201210353426 A CN201210353426 A CN 201210353426A CN 102832539 B CN102832539 B CN 102832539B
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- gan
- laser diode
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Abstract
The invention discloses a manufacturing method of a GaN substrate laser diode. The manufacturing method comprises the following steps of: forming a GaN substrate and successively depositing a p-type coating layer, a p-type light guide layer, an active layer, an n-type blocking layer, an n-type light guide layer and an n-type coating layer, wherein the method for forming the GaN substrate comprises the following steps of: putting a GaN wafer into a high-temperature and high-pressure device, heating and pressurizing the GaN wafer with the heating temperature being 820-880 DEG C and the applied pressure being 4.1-4.6GPa, and maintaining for 10-15 minutes; stopping heating and pressurizing so that the GaN wafer is restored to normal temperature and normal pressure; and annealing for 20-30 minutes in the high-temperature and high-pressure device, and taking out the GaN wafer. The manufacturing method disclosed by the invention has the advantages that the crystal defect density of the laser diode substrate can be obviously reduced, and the performance and the service life of the laser diode are improved.
Description
Technical field
The present invention relates to a kind of manufacture method of laser diode.
Background technology
Laser diode (LD) is a kind of to form diode by semi-conducting material, and its basic structure comprises substrate and be deposited on successively P/N type coating layer, active layer and the P/N type coating layer on substrate, and ohmic contact on N-type and P type coating layer.Substrate, as the ground of LDZhe Zuo mansion, has important effect.Sapphire is a kind of conventional LD substrate, but due to lattice and the thermal stress mismatch of the hetero epitaxial layer on itself and its, after heating, because degrees of expansion difference can be burst apart, causes device failure.An other class LD substrate comprises GaN, GaAs, the semi-conducting materials such as InP.As generally all comprising various defects in the above-mentioned semi-conducting material of substrate, such as dislocation, gap or room etc., defect can cause crystal strain, strain meeting causes the quality of epitaxial loayer on substrate and performance to reduce, and causes the lost of life of laser diode.For many years, along with the development of semiconductor technology, process those skilled in the art studying for a long period of time and putting into practice, and have formed comparatively perfect crystal growth technique flow process, have reduced the defect concentration forming in semiconductor substrate materials growth course.But people also wish to obtain the substrate that defect concentration is lower, make the laser diode that performance is better, the life-span is longer.How further to reduce or eliminate defect and become this area urgent problem.
Summary of the invention
In order to overcome the defect existing in prior art, the invention provides a kind of manufacture method of GaN substrate laser diode, the method can significantly reduce the defect concentrations in crystals in laser diode substrate, improves performance and the life-span of laser diode.
GaN substrate laser diode of the present invention comprises p-GaN substrate, has deposited successively p-type coating layer, p-type photoconductive layer and active layer on substrate, wherein,
P type coating layer is p-Al
ain
bga
1-a-bn, wherein 0≤a, b, a+b≤1;
P-type photoconductive layer is p-Al
cin
dga
1-c-dn, wherein 0≤c, d, c+d≤1;
Active layer is the p-Al of superlattice structure
ein
fga
1-e-fn/p-AI
gin
hga
1-g-hn multiple quantum well layer, wherein 0≤e, f, g, h, e+f, g+h≤1.
On active layer 4, also deposited successively N-shaped barrier layer, N-shaped photoconductive layer 6 and N-shaped coating layer 7, wherein N-shaped barrier layer 5 is n-Al
iin
jga
1-i-jn, N-shaped photoconductive layer 6 is n-Al
kin
1ga
1-k-1n, N-shaped coating layer 7 is n-Al
min
nga
1-m-nn, wherein 0≤i, j, k, l, m, n, i+j, k+1, m+n≤1.
The manufacture method of GaN substrate laser diode of the present invention comprises the steps, first forms GaN substrate, secondly on substrate, has deposited successively p-type coating layer, p-type photoconductive layer, active layer, N-shaped barrier layer, N-shaped photoconductive layer and N-shaped coating layer.
The method that wherein forms GaN substrate comprises the steps:
(1) at normal temperatures and pressures, GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
(2) pressurization when GaN wafer heating, heating-up temperature is 820～880 DEG C, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes.Wherein, the rate of heat addition is 100 DEG C/min, and compression rate is 0.2～0.3GPa/ minute.
(3) stop heating, make GaN wafer be cooled to normal temperature; Slowly release, makes GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, anneal after 20～30 minutes, take out GaN wafer.
Brief description of the drawings
Fig. 1 is the structural representation of GaN substrate laser diode of the present invention.
Embodiment
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Fig. 1 shows the structural representation of laser diode of the present invention.It comprises p-GaN substrate 1, has deposited successively p-type coating layer 2, p-type photoconductive layer 3 and active layer 4 on substrate 1.
P type coating layer 2 is p-Al
ain
bga
1-a-bn, p-type photoconductive layer 3 is p-Al
cin
dga
1-c-dn, wherein 0≤a, b, c, d, a+b, c+d≤1.
Coating layer 2 can be also p-Al
ain
bga
1-a-bn superlattice.
Active layer 4 is p-Al of superlattice structure
ein
fga
1-e-fn/p-AI
gin
hga
1-g-hn multiple quantum well layer, wherein 0≤e, f, g, h, e+f, g+h≤1.
On active layer 4, also deposited N-shaped barrier layer 5, N-shaped barrier layer 5 is n-Al
iin
jga
1-i-jn, is N-shaped photoconductive layer 6 and N-shaped coating layer 7 on it, and wherein N-shaped photoconductive layer 6 is n-Al
kin
1ga
1-k-1n, N-shaped coating layer 7 is n-Al
min
nga
1-m-nn, wherein 0≤i, j, k, l, m, n, i+j, k+1, m+n≤1.
N-shaped coating layer 7 can be also p-Al
min
nga
1-m-nn superlattice.
In a preferred embodiment, the band gap on coating layer, photoconductive layer and N-shaped barrier layer is all large than the band gap of active layer.
In a further advantageous embodiment, the band gap of photoconductive layer is less than the band gap of coating layer, and the band gap on N-shaped barrier layer is larger than the band gap of coating layer.
On N-shaped coating layer 7, N-shaped contact layer 8 can be set, N-shaped contact layer 8 can be n-Al
oin
pga
1-o-pn, wherein 0≤o, p, o+p≤1, the band gap of N-shaped contact layer is larger than the band gap of active area, less than the band gap of coating layer.
N-shaped contact layer 8 can also be n
+-Al
yin
zga
1-y-zn superlattice, wherein 0≤y, z, y+z≤1.
By etch structures n contact layer, coating layer, active layer and the optional p contact layer of this device, form mesa structure.Table top is enough deeply to extend at least under active layer, and can extend to the topmost portion of substrate.
In order to improve electricity restriction and to reduce threshold current, can pass through peripheral etching one ridge structure of contact layer, and enter in uppermost coating layer.After corrosion forms bar shaped table top and ridge structure, form passivation layer by the side of table top and ridge but not the top passivation of ridge.Passivation layer can comprise SiO
2or SiN
x, can be by method depositions such as thermal evaporation, electron beam evaporation, sputters.
Then, on top surface (N-shaped) and basal surface (p-type), form respectively N-shaped Metal Contact 9 and p-type Metal Contact 10.N-shaped Metal Contact 9 is preferably nickel-billon, and p-type Metal Contact 10 is preferably Ti-Al alloy.It can form by any method known in the art, for example sputtering sedimentation or electron-beam evaporation.The temperature that above-mentioned contact is annealed between about 400 DEG C to 950 DEG C forms ohmic contact.
Finally, at the in-plane cutter part perpendicular to above-mentioned ridge structure, to determine the length dimension of laser cavity.The length of laser cavity at 100 μ m between 2000 μ m.
The device architecture of having described p-type substrate above, the device architecture of N-shaped substrate is contrary with it, and p-contact layer and n-contact layer and p-coating layer and n-coating layer are put upside down respectively.
The manufacture method of laser diode of the present invention comprises the steps, first forms GaN substrate, secondly on substrate, has deposited successively p-type coating layer, p-type photoconductive layer, active layer, N-shaped barrier layer, N-shaped photoconductive layer and N-shaped coating layer.
The method that wherein forms GaN substrate comprises the steps:
(1) at normal temperatures and pressures, GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
(2) pressurization when GaN wafer heating, heating-up temperature is 820～880 DEG C, moulding pressure is 4.1 ~ 4.6GPa, keeps 10～15 minutes; Moulding pressure herein may also be referred to as pressurization pressure.Wherein, the rate of heat addition is 100 DEG C/min, and compression rate is 0.2～0.3GPa/ minute.
(3) stop heating, make GaN wafer be cooled to normal temperature; Slowly release, makes GaN wafer return to normal pressure simultaneously.Release speed is 0.5～0.8GPa/ minute.
(4) in high temperature high pressure device, anneal after 20～30 minutes, take out GaN wafer.
The present invention has carried out the experiment of 50 groups of different temperatures and pressure limit, and GaN wafer carried out to high temperature high pressure process.Experimental data shows, it is 820～880 DEG C that GaN wafer is implemented to heating-up temperature, after moulding pressure is the high temperature high pressure process annealing of 4.1 ~ 4.6GPa, it is before treatment 20～30% that the density in its dislocation and space is reduced to, and illustrates that the method has obviously reduced the defect concentration in wafer.Experimental data also shows, defect concentration and the heating-up temperature of wafer after processing, moulding pressure are relevant, and its Main Function of temperature range and pressure limit, but heating, pressurization and decompression rate are also to its effect of the minimizing of defect concentration, above record preferred temperature and pressure scope, and preferred heating, pressurization and decompression rate.Cooling does not need to adopt specific process, stops heating rear naturally cooling.The laser diode that adopts GaN wafer after treatment to form as substrate, has increased disruptive field intensity, has reduced electric leakage, has increased thermal conductivity, and light emission effciency is higher, and reliability is larger.
Can adopt top, existing two sides and polyhedron high-pressure installation for the treatment of the high temperature high pressure device of wafer of the present invention, polyhedron high-pressure installation comprises hexahedron pressure chamber device and the octahedra chamber device of pressing.Preferably adopt two sides to push up the quiet high-pressure installation of large cavity, push up large press referred to as two sides.The shell of this device and the material of depression bar are steel alloy, and pressing the material of anvil is tungsten carbide.Adopting this two sides to push up the maximum pressure that large press can reach is 7GPa.Although its maximum pressure is compared, polyhedron high-pressure installation and diamond anvil cell ultra-high pressure apparatus are low, and because its cavity volume is large, the diameter of processing sample, from ten centimetres of left and right, is suitable for processing substrate wafer.
In this high-pressure installation, be provided with electric calorifie installation, it provides heating heat by heating wire, to heating wafer after electric calorifie installation energising.Heating-up temperature reaches as high as 1700 degrees Celsius.
Pressure medium is sodium chloride (NaCl), magnesium oxide (MgO) or liquid nitrogen, and this medium can make pressure be evenly distributed on crystal, makes non-isotropy stress minimum.
NaCl and MgO are low shearing strength solid, and its coefficient of internal friction is lower than 0.2, can well pressure transmission, play heat insulation effect simultaneously, and pressurization is beneficial to heat.Liquid nitrogen, in playing pressure transmission effect, can be restrained the decomposition of GaN in the time of heating and annealing.
Certainly; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and distortion, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (2)
1. a manufacture method for GaN substrate laser diode, comprises the steps,
First form GaN substrate, secondly on substrate, deposited successively p-type coating layer, p-type photoconductive layer, active layer, N-shaped barrier layer, N-shaped photoconductive layer and N-shaped coating layer, it is characterized in that,
The method that forms GaN substrate comprises the steps:
(1) at normal temperatures and pressures, GaN wafer is put into high temperature high pressure device, add transmission medium in high temperature high pressure device, this transmission medium is NaCL and liquid nitrogen;
(2) pressurization when GaN wafer heating, being heated to temperature is 820～880 DEG C, being forced into pressure is 4.1～4.6GPa, keeps 10～15 minutes;
(3) stop heating, make GaN wafer be cooled to normal temperature; Slowly release, makes GaN wafer return to normal pressure simultaneously; Release speed is 0.5～0.8GPa/ minute;
(4) in high temperature high pressure device, anneal after 20～30 minutes, take out GaN wafer.
2. the manufacture method of GaN substrate laser diode as claimed in claim 1, is characterized in that, in step (2), the rate of heat addition is 100 DEG C/min, and compression rate is 0.2～0.3GPa/ minute.
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| CN201210353426.6A CN102832539B (en) | 2012-09-20 | 2012-09-20 | Manufacturing method of GaN substrate laser diode |
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|---|---|---|---|
| CN201210353426.6A CN102832539B (en) | 2012-09-20 | 2012-09-20 | Manufacturing method of GaN substrate laser diode |
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| CN102832539B true CN102832539B (en) | 2014-07-30 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103746050A (en) * | 2014-01-26 | 2014-04-23 | 南通明芯微电子有限公司 | Method for manufacturing p-type GaAs-based laser diode |
| CN103779456A (en) * | 2014-01-26 | 2014-05-07 | 南通明芯微电子有限公司 | Method for manufacturing N type GaAs-based semiconductor light emitting diode |
| US11158995B2 (en) * | 2018-06-01 | 2021-10-26 | Visual Photonics Epitaxy Co., Ltd. | Laser diode with defect blocking layer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503991A (en) * | 2001-01-16 | 2004-06-09 | ���﹫˾ | Group III nitride LED with undoped cladding layer |
| CN1515036A (en) * | 2001-06-13 | 2004-07-21 | ���µ�����ҵ��ʽ���� | Nitride semiconductor, production method therefor and nitride semiconductor element |
| CN102544290A (en) * | 2010-12-27 | 2012-07-04 | 财团法人工业技术研究院 | Nitirde semiconductor light emitting diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012507874A (en) * | 2008-10-31 | 2012-03-29 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Optoelectronic devices based on nonpolar or semipolar AlInN and AlInGaN alloys |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1503991A (en) * | 2001-01-16 | 2004-06-09 | ���﹫˾ | Group III nitride LED with undoped cladding layer |
| CN1515036A (en) * | 2001-06-13 | 2004-07-21 | ���µ�����ҵ��ʽ���� | Nitride semiconductor, production method therefor and nitride semiconductor element |
| CN102544290A (en) * | 2010-12-27 | 2012-07-04 | 财团法人工业技术研究院 | Nitirde semiconductor light emitting diode |
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