CN102832297A - 一种半导体发光器件及电流扩散层的制备方法 - Google Patents
一种半导体发光器件及电流扩散层的制备方法 Download PDFInfo
- Publication number
- CN102832297A CN102832297A CN2011101639042A CN201110163904A CN102832297A CN 102832297 A CN102832297 A CN 102832297A CN 2011101639042 A CN2011101639042 A CN 2011101639042A CN 201110163904 A CN201110163904 A CN 201110163904A CN 102832297 A CN102832297 A CN 102832297A
- Authority
- CN
- China
- Prior art keywords
- film layer
- thin film
- layer
- ito thin
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000009792 diffusion process Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 105
- 238000000151 deposition Methods 0.000 claims abstract description 69
- 230000008021 deposition Effects 0.000 claims abstract description 68
- 238000001704 evaporation Methods 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 202
- 239000010410 layer Substances 0.000 claims description 179
- 239000011787 zinc oxide Substances 0.000 claims description 101
- 239000010408 film Substances 0.000 claims description 69
- 230000008020 evaporation Effects 0.000 claims description 29
- 229920002120 photoresistant polymer Polymers 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 6
- 238000004070 electrodeposition Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 claims description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 11
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 2
- 238000011065 in-situ storage Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 239000010931 gold Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 230000007773 growth pattern Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000001795 light effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
Abstract
Description
Claims (11)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110163904.2A CN102832297B (zh) | 2011-06-17 | 2011-06-17 | 一种半导体发光器件及电流扩散层的制备方法 |
EP12800673.1A EP2721651B1 (en) | 2011-06-17 | 2012-06-15 | Method for forming current diffusion layer in semiconductor light emitting device and method for fabricating semiconductor light emitting device |
PCT/CN2012/077035 WO2012171493A1 (en) | 2011-06-17 | 2012-06-15 | Method for forming current diffusion layer in semiconductor light emitting device and method for fabricating semiconductor light emitting device |
US14/101,210 US9401457B2 (en) | 2011-06-17 | 2013-12-09 | Method for forming current diffusion layer in light emitting diode device and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110163904.2A CN102832297B (zh) | 2011-06-17 | 2011-06-17 | 一种半导体发光器件及电流扩散层的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102832297A true CN102832297A (zh) | 2012-12-19 |
CN102832297B CN102832297B (zh) | 2015-09-30 |
Family
ID=47335348
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110163904.2A Active CN102832297B (zh) | 2011-06-17 | 2011-06-17 | 一种半导体发光器件及电流扩散层的制备方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9401457B2 (zh) |
EP (1) | EP2721651B1 (zh) |
CN (1) | CN102832297B (zh) |
WO (1) | WO2012171493A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730558A (zh) * | 2013-12-31 | 2014-04-16 | 中国科学院半导体研究所 | 采用复合透明导电层的发光二极管及其制备方法 |
CN105449059A (zh) * | 2015-11-24 | 2016-03-30 | 山东浪潮华光光电子股份有限公司 | 具有电流扩展增透膜层的GaN基LED芯片及其制备方法 |
CN110797440A (zh) * | 2018-08-03 | 2020-02-14 | 山东浪潮华光光电子股份有限公司 | 一种以氧化锌为电流扩展层的发光二极管芯片的制备方法 |
CN113571610A (zh) * | 2021-07-23 | 2021-10-29 | 广东中图半导体科技股份有限公司 | 一种衬底表面的微处理方法、复合衬底及led外延片 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104911540B (zh) * | 2014-03-12 | 2018-01-19 | 山东浪潮华光光电子股份有限公司 | 一种提高led抗esd能力的ito薄膜的电子束蒸镀方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001203393A (ja) * | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | 発光ダイオード |
JP2005217331A (ja) * | 2004-01-30 | 2005-08-11 | Nichia Chem Ind Ltd | 半導体発光素子 |
US20050277218A1 (en) * | 2004-02-26 | 2005-12-15 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device and method for producing the same |
CN101075652A (zh) * | 2006-09-05 | 2007-11-21 | 武汉迪源光电科技有限公司 | 粗化电极用于高亮度正装led芯片和垂直led芯片的制作工艺 |
US20080296598A1 (en) * | 2007-05-28 | 2008-12-04 | Horng-Jou Wang | Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method |
CN101740704A (zh) * | 2009-12-21 | 2010-06-16 | 山东大学 | 一种光子晶体结构GaN基LED的制作方法 |
CN101764186A (zh) * | 2008-11-18 | 2010-06-30 | Lg伊诺特有限公司 | 半导体发光器件 |
CN101931034A (zh) * | 2009-06-22 | 2010-12-29 | 晶元光电股份有限公司 | 光电元件 |
CN101964382A (zh) * | 2009-07-21 | 2011-02-02 | 展晶科技(深圳)有限公司 | 提高光萃取效率的半导体光电结构及其制造方法 |
JP2011060986A (ja) * | 2009-09-10 | 2011-03-24 | Ulvac Japan Ltd | 発光ダイオード素子及び発光ダイオード素子の製造方法 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL278121A (zh) * | 1961-05-08 | |||
US3331983A (en) * | 1964-04-27 | 1967-07-18 | Hughes Aircraft Co | Direct-view storage tube and method of erasure |
EP0385475A3 (en) * | 1989-03-02 | 1991-04-03 | Asahi Glass Company Ltd. | Method of forming a transparent conductive film |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
US6498358B1 (en) * | 2001-07-20 | 2002-12-24 | Motorola, Inc. | Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating |
US20030022414A1 (en) * | 2001-07-25 | 2003-01-30 | Motorola, Inc. | Structure and method for fabricating anopto-electronic device having an electrochromic switch |
TW586333B (en) * | 2003-05-19 | 2004-05-01 | Toppoly Optoelectronics Corp | Light-emitting device having anti-reflecting member |
TWI222759B (en) | 2003-07-03 | 2004-10-21 | Epitech Corp Ltd | Light emitting diode and method for manufacturing the same |
US7109048B2 (en) * | 2003-09-30 | 2006-09-19 | Lg Electronics Inc. | Semiconductor light emitting device and fabrication method thereof |
EP1686629B1 (en) * | 2003-11-19 | 2018-12-26 | Nichia Corporation | Nitride semiconductor light emitting diode and method for manufacturing the same |
US7033949B2 (en) * | 2003-12-29 | 2006-04-25 | Formosa Epitaxy Incorporation | Structure and manufacturing method for nitride-based light-emitting diodes |
US8227820B2 (en) * | 2005-02-09 | 2012-07-24 | The Regents Of The University Of California | Semiconductor light-emitting device |
CN2813637Y (zh) | 2005-02-06 | 2006-09-06 | 朱刚毅 | 卧式电子束蒸发式真空镀膜机 |
TWI436494B (zh) * | 2005-05-02 | 2014-05-01 | Nichia Corp | Nitride semiconductor components |
TWI256157B (en) * | 2005-09-22 | 2006-06-01 | Epitech Technology Corp | Method for manufacturing light-emitting diode |
US20070069225A1 (en) * | 2005-09-27 | 2007-03-29 | Lumileds Lighting U.S., Llc | III-V light emitting device |
CN101257075B (zh) * | 2008-03-13 | 2010-05-12 | 鹤山丽得电子实业有限公司 | 一种发光二极管器件及其制造方法 |
-
2011
- 2011-06-17 CN CN201110163904.2A patent/CN102832297B/zh active Active
-
2012
- 2012-06-15 WO PCT/CN2012/077035 patent/WO2012171493A1/en active Application Filing
- 2012-06-15 EP EP12800673.1A patent/EP2721651B1/en active Active
-
2013
- 2013-12-09 US US14/101,210 patent/US9401457B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001203393A (ja) * | 2000-01-19 | 2001-07-27 | Matsushita Electric Works Ltd | 発光ダイオード |
JP2005217331A (ja) * | 2004-01-30 | 2005-08-11 | Nichia Chem Ind Ltd | 半導体発光素子 |
US20050277218A1 (en) * | 2004-02-26 | 2005-12-15 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device and method for producing the same |
CN101075652A (zh) * | 2006-09-05 | 2007-11-21 | 武汉迪源光电科技有限公司 | 粗化电极用于高亮度正装led芯片和垂直led芯片的制作工艺 |
US20080296598A1 (en) * | 2007-05-28 | 2008-12-04 | Horng-Jou Wang | Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method |
CN101764186A (zh) * | 2008-11-18 | 2010-06-30 | Lg伊诺特有限公司 | 半导体发光器件 |
CN101931034A (zh) * | 2009-06-22 | 2010-12-29 | 晶元光电股份有限公司 | 光电元件 |
CN101964382A (zh) * | 2009-07-21 | 2011-02-02 | 展晶科技(深圳)有限公司 | 提高光萃取效率的半导体光电结构及其制造方法 |
JP2011060986A (ja) * | 2009-09-10 | 2011-03-24 | Ulvac Japan Ltd | 発光ダイオード素子及び発光ダイオード素子の製造方法 |
CN101740704A (zh) * | 2009-12-21 | 2010-06-16 | 山东大学 | 一种光子晶体结构GaN基LED的制作方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103730558A (zh) * | 2013-12-31 | 2014-04-16 | 中国科学院半导体研究所 | 采用复合透明导电层的发光二极管及其制备方法 |
CN105449059A (zh) * | 2015-11-24 | 2016-03-30 | 山东浪潮华光光电子股份有限公司 | 具有电流扩展增透膜层的GaN基LED芯片及其制备方法 |
CN110797440A (zh) * | 2018-08-03 | 2020-02-14 | 山东浪潮华光光电子股份有限公司 | 一种以氧化锌为电流扩展层的发光二极管芯片的制备方法 |
CN113571610A (zh) * | 2021-07-23 | 2021-10-29 | 广东中图半导体科技股份有限公司 | 一种衬底表面的微处理方法、复合衬底及led外延片 |
Also Published As
Publication number | Publication date |
---|---|
EP2721651A1 (en) | 2014-04-23 |
US20140091355A1 (en) | 2014-04-03 |
EP2721651A4 (en) | 2014-11-12 |
CN102832297B (zh) | 2015-09-30 |
US9401457B2 (en) | 2016-07-26 |
WO2012171493A1 (en) | 2012-12-20 |
EP2721651B1 (en) | 2018-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102832297B (zh) | 一种半导体发光器件及电流扩散层的制备方法 | |
CN104733569B (zh) | 纳米尺寸图形化衬底的制备方法 | |
CN104157749B (zh) | Ito膜层的制备方法及led芯片的制备方法 | |
KR102116831B1 (ko) | Ⅲ질화물계 발광 다이오드 상에 에피택셜 zno를 증착시키는 공정 및 에피택셜 zno를 포함하는 발광 다이오드 | |
CN106409994B (zh) | 一种AlGaInP基发光二极管芯片及其制作方法 | |
CN103199161B (zh) | 一种在GaP表面制备锥状结构的方法 | |
CN102593285A (zh) | 一种回收图形化蓝宝石衬底的方法 | |
CN107910405A (zh) | 一种发光二极管芯片的制作方法 | |
CN102709422A (zh) | 半导体发光器件及其制备方法 | |
CN104882523A (zh) | 一种钝化层折射率渐变的GaN基发光二极管芯片及其制备方法 | |
CN106910799A (zh) | 一种发光二极管的制备方法 | |
CN109872945A (zh) | 一种复合衬底、半导体器件及其制造方法 | |
CN104425224B (zh) | Ⅲ族化合物衬底的掩膜层制备方法 | |
CN104319326B (zh) | 一种发光二极管的制造方法 | |
CN103066173B (zh) | 一种发光二极管芯片的制备方法 | |
CN107068810A (zh) | 一种发光二极管芯片的制备方法 | |
CN106058003A (zh) | 一种提升led芯片亮度的方法 | |
CN103811596A (zh) | 一种氮化镓基发光二极管的制备方法 | |
CN102142362A (zh) | 利用金属化合物的电泳沉积图案进行光刻的方法 | |
CN102122686A (zh) | 发光二极管的制造方法 | |
CN105810607B (zh) | 通过原位刻蚀监控实现p型氮化物增强型hemt的方法及系统 | |
CN104659165A (zh) | 一种GaN基发光二极管芯片的制备方法 | |
CN105742449A (zh) | 发光二极管的电极制备方法 | |
CN112750933B (zh) | 一种led芯片及其制作方法 | |
CN102569038A (zh) | 图形化衬底的制作方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191230 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: Shenzhen BYD Microelectronics Co., Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: Biyadi Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |