CN102830594A - Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof - Google Patents
Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof Download PDFInfo
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- CN102830594A CN102830594A CN2012103355105A CN201210335510A CN102830594A CN 102830594 A CN102830594 A CN 102830594A CN 2012103355105 A CN2012103355105 A CN 2012103355105A CN 201210335510 A CN201210335510 A CN 201210335510A CN 102830594 A CN102830594 A CN 102830594A
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Abstract
The invention discloses an exposed out-of-focus SEM (Scanning Electron Microscope) detection device. The exposed out-of-focus SEM detection device at least comprises first exposing patterns and second exposing patterns, wherein the first exposing patterns and the second exposing patterns are arranged at intervals, the first exposing patterns are provided with first straight line patterns and first convex patterns which are arranged on the first straight line patterns, the second exposing patterns are provided with second straight line patterns and second convex patterns which are arranged on the second straight line patterns, and preset distance is left between the first convex patterns and the second straight line patterns or the second convex patterns and the first straight line patterns, which are positioned in adjacent space of the first exposing pattern and the second exposing pattern. According to the exposed out-of-focus SEM detection device disclosed by the invention, by arranging convex patterns on the straight line patterns, the exposing sensitiveness is increased, and the offset representing a focusing flat surface is more intuitive as well. According to a detection method disclosed by the invention, the offset of the focusing surface can be accurately and quickly judged through a deformation and adhesion situation of the exposing patterns in fixed points.
Description
Technical field
The present invention relates to technical field of semiconductor device, relate in particular to a kind of the exposure and lose burnt SEM testing fixture and method thereof.
Background technology
Along with the development of cmos semiconductor technology and dimension shrinks in proportion, small defective will cause great influence to device performance.So in the preparation process of semiconductor devices, initiatively finding defective and in time preventing to be worse off is to reduce production costs, guarantee the effective way of product quality.
In existing semi-conductor chip manufacture process, use litho machine (scanner) exposure definition circuit figure usually.But; Along with the continuous progress of VLSI (very large scale integrated circuits) technology, the live width size (CD) of semiconductor devices is more and more littler, and process window is also more and more littler; The focusing planar offset then takes place in the process of using said photo-etching machine exposal definition circuit figure easily; Produce the exposure figure adhesion, greatly damage circuit performance, and then cause circuit malfunction.
Normally, in existing photolithographic exposure technology, those skilled in the art calculate the skew to the focal plane through the size that measures live width CD.The method of said calculating focusing planar offset is merely the performance of quantification, and can not intuitively find the state of definition circuit figure.
The problem that event exists to prior art, this case designer relies on the industry experience for many years of being engaged in, and the active research improvement is so there be a kind of mistake burnt SEM testing fixture and method thereof of making public of inventing.
Summary of the invention
The present invention be directed in the prior art; Traditional method is calculated the skew to the focal plane through the size that measures live width CD; The method of said calculating focusing planar offset is merely the performance of quantification, and can not find intuitively that the defectives such as state of definition circuit figure provide a kind of the exposure to lose burnt SEM testing fixture.
Another purpose of the present invention is in the prior art; Traditional method is calculated the skew to the focal plane through the size that measures live width CD; The method of said calculating focusing planar offset is merely the performance of quantification, and can not find intuitively that the defectives such as state of definition circuit figure provide a kind of the exposure to lose the inspection method of burnt SEM testing fixture.
In order to address the above problem; The present invention provides a kind of the exposure to lose burnt SEM testing fixture; But but at least the first exposing patterns and second exposing patterns that burnt SEM testing fixture comprises setting are at interval lost in said exposure, but said first exposing patterns has the first straight line image and the first protuberance pattern that is arranged on said first straight line image first side; But said second exposing patterns has the second straight line image and the second protuberance pattern that is arranged on said second straight line image first side; But but between the first protuberance pattern of said first exposing patterns and the said second exposing patterns adjacent space and the said second straight line image or the said second protuberance pattern and the said first straight line image, have predeterminable range, and said predeterminable range is preset according to the different sizes and the live width size of exposure focusing planar offset in the etching technics.
Optional; But but but but first exposing patterns, second exposing patterns, the 3rd exposing patterns that the exposing patterns of burnt SEM testing fixture further comprises setting at interval lost in said exposure; But and the 4th exposing patterns; But said first exposing patterns has the first straight line image and the first protuberance pattern that is arranged on said first straight line image first side; But said second exposing patterns has the second straight line image and the second protuberance pattern that is arranged on said second straight line image first side; But said the 3rd exposing patterns has the 3rd straight line image and the 3rd protuberance pattern that is arranged on the said the 3rd straight line image first side, but said the 4th exposing patterns has Siping City's vertical element pattern and the 4th protuberance pattern that is arranged on said Siping City vertical element pattern first side.
Optional, but but between the first protuberance pattern of said first exposing patterns and the said second exposing patterns adjacent space and the said second straight line image, have the first predeterminable range d
1, and the said first predeterminable range d
1Corresponding said exposure is 10nm to the side-play amount of focal plane.
Optional, but but between the second protuberance pattern of said second exposing patterns and said the 3rd exposing patterns adjacent space and the said the 3rd straight line image, have the second predeterminable range d
2, and the said second predeterminable range d
2Corresponding said exposure is 20nm to the side-play amount of focal plane.
Optional, but but between the 3rd protuberance pattern of said the 3rd exposing patterns and said the 4th exposing patterns adjacent space and said Siping City vertical element pattern, have the 3rd predeterminable range d
3, and said the 3rd predeterminable range d
3Corresponding said exposure is 30nm to the side-play amount of focal plane.
Optional, but the photoetching production technology that the exposing patterns of burnt SEM testing fixture is applicable to 0.25 μ m and the following lines exposure of 0.25 μ m is lost in said exposure.
Optional, said first side is the left side.
Optional, said first side is the right side.
For realizing the present invention's another purpose, the present invention provides a kind of the exposure to lose the inspection method of burnt SEM testing fixture, and the inspection method that burnt SEM testing fixture is lost in said exposure comprises:
Execution in step S1: but the exposing patterns of the burnt SEM testing fixture of said exposure mistake is made public;
Execution in step S2: but the figure after the said exposing patterns exposure of said SEM device inspection utilized, and then judge the size of said focusing planar offset;
Execution in step S3: exposure sources adjustment.
Optionally, but the distortion adhesion of the size of said focusing planar offset after by the exposure of said exposing patterns judge.
Optional, but when the first protuberance pattern place of said exposing patterns deforms adhesion, can judge and said the 10nm skew taken place in the focal plane.
Optional, but the first protuberance pattern of said exposing patterns, when the second protuberance pattern place deforms adhesion can be judged and said the 20nm skew taken place in the focal plane.
Optional, but the first protuberance pattern of said exposing patterns, the second protuberance pattern, and and the 3rd protuberance pattern place is when deforming adhesion, can judge said the 30nm skew have been taken place in the focal plane.
In sum, exposure according to the invention is lost burnt SEM testing fixture through on said straight bar paten, the protuberance pattern being set, and has not only increased exposure sensitivity, and characterizes more directly perceived to the skew of focal plane.Said exposure is lost the inspection method of burnt SEM testing fixture and not only can be fixed a point, accurately; But judge said side-play amount through the distortion adhesion situation of said exposing patterns efficiently to the focal plane; And can the bad timely processing in the exposure technology be enhanced productivity, improve the product yield.
Description of drawings
But shown in Figure 1ly, the present invention loses the exposing patterns structural representation of burnt SEM testing fixture for making public;
But the structural representation of the exposing patterns of burnt SEM testing fixture is lost in the exposure of enumerating for the present invention shown in Figure 2;
Shown in Figure 3ly, the present invention loses the inspection method process flow diagram of burnt SEM testing fixture for making public;
Shown in Figure 4ly, the present invention loses the structural representation that burnt SEM testing fixture is checked through said focusing planar offset 10nm for making public;
Shown in Figure 5ly, the present invention loses the structural representation that burnt SEM testing fixture is checked through said focusing planar offset 20nm for making public;
Shown in Figure 6ly, the present invention loses the structural representation that burnt SEM testing fixture is checked through said focusing planar offset 30nm for making public.
Embodiment
By the technology contents, the structural attitude that specify the invention, reached purpose and effect, will combine embodiment and conjunction with figs. to specify below.
See also Fig. 1, but shown in Figure 1ly lose the exposing patterns structural representation of burnt SEM testing fixture for the present invention makes public.But but but said exposing patterns 1 comprises at least the first exposing patterns 10 and second exposing patterns 11 that is provided with at interval.But said first exposing patterns 10 has the first straight line image 101 and the first protuberance pattern 102 that is arranged on said first straight line image 101 first sides.But said second exposing patterns 11 has the second straight line image 111 and the second protuberance pattern 112 that is arranged on said second straight line image 111 first sides.But but between the first protuberance pattern 102 of said first exposing patterns 10 and said second exposing patterns, 11 adjacent spaces and the said second straight line image 111 or the said second protuberance pattern 112 and the said first straight line image 101, have predeterminable range, and said predeterminable range is preset according to the different sizes and the live width size of exposure focusing planar offset in the etching technics.But the photoetching production technology that the exposing patterns 1 of burnt SEM testing fixture is applicable to 0.25 μ m and the following lines exposure of 0.25 μ m is lost in said exposure.Apparently, said first side can be the left side.Said first side also can be the right side.
See also Fig. 2, and combine to consult Fig. 1, but the structural representation of exposing patterns of Jiao's SEM testing fixture is lost in the exposure of enumerating for the present invention shown in Figure 2.In the present invention, enumerate ground, but but but but said exposure lose the exposing patterns 1 of burnt SEM testing fixture and comprise first exposing patterns 10 that is provided with at interval, second exposing patterns 11, the 3rd exposing patterns 12, but and the 4th exposing patterns 13.But said first exposing patterns 10 has the first straight line image 101 and the first protuberance pattern 102 that is arranged on said first straight line image 101 first sides.But said second exposing patterns 11 has the second straight line image 111 and the second protuberance pattern 112 that is arranged on said second straight line image 111 first sides.But said the 3rd exposing patterns 12 has the 3rd straight line image 121 and the 3rd protuberance pattern 122 that is arranged on the said the 3rd straight line image 121 first sides.But said the 4th exposing patterns 13 has Siping City's vertical element pattern 131 and the 4th protuberance pattern 132 that is arranged on said Siping City vertical element pattern 131 first sides.But but between the first protuberance pattern 102 of said first exposing patterns 10 and said second exposing patterns, 11 adjacent spaces and the said second straight line image 111, has the first predeterminable range d
1, and the said first predeterminable range d
1Different sizes according to exposure focusing planar offset in the etching technics are preset.Particularly, the said first predeterminable range d
1Corresponding said exposure is 10nm to the side-play amount of focal plane.But but between the second protuberance pattern 112 of said second exposing patterns 11 and said the 3rd exposing patterns 12 adjacent spaces and the said the 3rd straight line image 121, has the second predeterminable range d
2, and the said second predeterminable range d
2Different sizes according to exposure focusing planar offset in the etching technics are preset.Particularly, the said second predeterminable range d
2Corresponding said exposure is 20nm to the side-play amount of focal plane.But but between the 3rd protuberance pattern 122 of said the 3rd exposing patterns 12 and said the 4th exposing patterns 13 adjacent spaces and said Siping City vertical element pattern 131, has the 3rd predeterminable range d
3, and said the 3rd predeterminable range d
3Different sizes according to exposure focusing planar offset in the etching technics are preset.Particularly, said the 3rd predeterminable range d
3Corresponding said exposure is 30nm to the side-play amount of focal plane.
Enumerate but the exposing patterns 1 of the SEM testing fixture that said exposure mistake is burnt is merely, should not be regarded as restriction technical scheme of the present invention.The exposing patterns that those skilled in the art can also define varying number and be provided with at interval according to the technical scheme that the present invention discloses according to actual needs.
See also Fig. 3, and combine to consult Fig. 2, detailed description the present invention makes public and loses the inspection method flow process of burnt SEM testing fixture.Shown in Figure 3ly, the present invention loses the inspection method process flow diagram of burnt SEM testing fixture for making public.In said etching technics exposure process, but the exposing patterns 1 of the burnt SEM testing fixture of said exposure mistake is made public.The inspection method of burnt SEM testing fixture is lost in said exposure, comprising:
Execution in step S1: but the exposing patterns 1 of the burnt SEM testing fixture of said exposure mistake is made public;
Execution in step S2: but the figure after said exposing patterns 1 exposure of said SEM device inspection utilized, and then judge the size of said focusing planar offset;
Execution in step S3: exposure sources adjustment.
See also Fig. 4, Fig. 5, Fig. 6, shown in Figure 4ly lose the structural representation that burnt SEM testing fixture is checked through said focusing planar offset 10nm for the present invention makes public.Shown in Figure 5ly, the present invention loses the structural representation that burnt SEM testing fixture is checked through said focusing planar offset 20nm for making public.Shown in Figure 6ly, the present invention loses the structural representation that burnt SEM testing fixture is checked through said focusing planar offset 30nm for making public.Particularly, in said step S2, but when the first protuberance pattern, 101 places of said exposing patterns 1 deform adhesion, then can judge and said the 10nm skew taken place in the focal plane.Similarly, but when the first protuberance pattern 102 of said exposing patterns, when the second protuberance pattern, 112 places deform adhesion, then can judge and said the 20nm skew taken place in the focal plane.But when the first protuberance pattern 102, the second protuberance pattern 112 of said exposing patterns, and the 3rd protuberance pattern 122 places are when deforming adhesion, then can judge said the 30nm skew have been taken place in the focal plane.
In sum, exposure according to the invention is lost burnt SEM testing fixture through on said straight bar paten, the protuberance pattern being set, and has not only increased exposure sensitivity, and characterizes more directly perceived to the skew of focal plane.Said exposure is lost the inspection method of burnt SEM testing fixture and not only can be fixed a point, accurately; But judge said side-play amount through the distortion adhesion situation of said exposing patterns efficiently to the focal plane; And can the bad timely processing in the exposure technology be enhanced productivity, improve the product yield.
Those skilled in the art all should be appreciated that, under the situation that does not break away from the spirit or scope of the present invention, can carry out various modifications and variations to the present invention.Thereby, if when any modification or modification fall in the protection domain of appended claims and equivalent, think that the present invention contains these modifications and modification.
Claims (13)
1. one kind is made public and loses burnt SEM testing fixture; It is characterized in that; But but at least the first exposing patterns and second exposing patterns that burnt SEM testing fixture comprises setting are at interval lost in said exposure, but said first exposing patterns has the first straight line image and the first protuberance pattern that is arranged on said first straight line image first side; But said second exposing patterns has the second straight line image and the second protuberance pattern that is arranged on said second straight line image first side; But but between the first protuberance pattern of said first exposing patterns and the said second exposing patterns adjacent space and the said second straight line image or the said second protuberance pattern and the said first straight line image, have predeterminable range, and said predeterminable range is preset according to the different sizes and the live width size of exposure focusing planar offset in the etching technics.
2. burnt SEM testing fixture is lost in exposure as claimed in claim 1; It is characterized in that; But but but but first exposing patterns, second exposing patterns, the 3rd exposing patterns that the exposing patterns of burnt SEM testing fixture further comprises setting at interval lost in said exposure; But and the 4th exposing patterns; But said first exposing patterns has the first straight line image and the first protuberance pattern that is arranged on said first straight line image first side; But said second exposing patterns has the second straight line image and the second protuberance pattern that is arranged on said second straight line image first side; But said the 3rd exposing patterns has the 3rd straight line image and the 3rd protuberance pattern that is arranged on the said the 3rd straight line image first side, but said the 4th exposing patterns has Siping City's vertical element pattern and the 4th protuberance pattern that is arranged on said Siping City vertical element pattern first side.
3. burnt SEM testing fixture is lost in exposure as claimed in claim 2, it is characterized in that, but but between the first protuberance pattern of said first exposing patterns and the said second exposing patterns adjacent space and the said second straight line image, has the first predeterminable range d
1, and the said first predeterminable range d
1Corresponding said exposure is 10nm to the side-play amount of focal plane.
4. burnt SEM testing fixture is lost in exposure as claimed in claim 2, it is characterized in that, but but between the second protuberance pattern of said second exposing patterns and said the 3rd exposing patterns adjacent space and the said the 3rd straight line image, has the second predeterminable range d
2, and the said second predeterminable range d
2Corresponding said exposure is 20nm to the side-play amount of focal plane.
5. burnt SEM testing fixture is lost in exposure as claimed in claim 2, it is characterized in that, but but between the 3rd protuberance pattern of said the 3rd exposing patterns and said the 4th exposing patterns adjacent space and said Siping City vertical element pattern, has the 3rd predeterminable range d
3, and said the 3rd predeterminable range d
3Corresponding said exposure is 30nm to the side-play amount of focal plane.
6. burnt SEM testing fixture is lost in described exposure like the arbitrary claim of claim 1～5, it is characterized in that, but the photoetching production technology that the exposing patterns of burnt SEM testing fixture is applicable to 0.25 μ m and the following lines exposure of 0.25 μ m is lost in said exposure.
7. burnt SEM testing fixture is lost in described exposure like the arbitrary claim of claim 1～5, it is characterized in that said first side is the left side.
8. burnt SEM testing fixture is lost in described exposure like the arbitrary claim of claim 1～5, it is characterized in that said first side is the right side.
9. one kind is lost the inspection method of burnt SEM testing fixture like the described exposure of the arbitrary claim of claim 1～5, it is characterized in that said method comprises:
Execution in step S1: but the exposing patterns of the burnt SEM testing fixture of said exposure mistake is made public;
Execution in step S2: but the figure after the said exposing patterns exposure of said SEM device inspection utilized, and then judge the size of said focusing planar offset;
Execution in step S3: exposure sources adjustment.
10. the inspection method of burnt SEM testing fixture is lost in exposure as claimed in claim 9, it is characterized in that, but the distortion adhesion after the size of said focusing planar offset is made public through said exposing patterns is judged.
11. the inspection method of burnt SEM testing fixture is lost in an exposure as claimed in claim 10, it is characterized in that, but when the first protuberance pattern place of said exposing patterns deforms adhesion, can judge and said the 10nm skew taken place in the focal plane.
12. the inspection method of burnt SEM testing fixture is lost in an exposure as claimed in claim 10; It is characterized in that; But the first protuberance pattern of said exposing patterns, when the second protuberance pattern place deforms adhesion can be judged and said the 20nm skew taken place in the focal plane.
13. the inspection method of burnt SEM testing fixture is lost in an exposure as claimed in claim 10; It is characterized in that; But the first protuberance pattern of said exposing patterns, the second protuberance pattern, and the 3rd protuberance pattern place is when deforming adhesion can be judged and said the 30nm skew taken place in the focal plane.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335510.5A CN102830594B (en) | 2012-09-11 | 2012-09-11 | Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210335510.5A CN102830594B (en) | 2012-09-11 | 2012-09-11 | Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof |
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| CN102830594A true CN102830594A (en) | 2012-12-19 |
| CN102830594B CN102830594B (en) | 2015-02-11 |
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| CN201210335510.5A Active CN102830594B (en) | 2012-09-11 | 2012-09-11 | Exposed out-of-focus SEM (Scanning Electron Microscope) detection device and detection method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
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| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US6057908A (en) * | 1996-08-08 | 2000-05-02 | Nikon Corporation | Exposure condition measurement method |
| US20070041003A1 (en) * | 2005-08-18 | 2007-02-22 | International Business Machines Corporation | Focus blur measurement and control method |
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| US4433911A (en) * | 1981-06-30 | 1984-02-28 | Tokyo Shibaura Denki Kabushiki Kaisha | Method of evaluating measure precision of patterns and photomask therefor |
| US5674650A (en) * | 1994-08-02 | 1997-10-07 | U.S. Philips Corporation | Method of repetitively imaging a mask pattern on a substrate, and apparatus for performing the method |
| US5656403A (en) * | 1996-01-30 | 1997-08-12 | United Microelectronics Corporation | Method and template for focus control in lithography process |
| US6057908A (en) * | 1996-08-08 | 2000-05-02 | Nikon Corporation | Exposure condition measurement method |
| US7511817B2 (en) * | 2003-11-25 | 2009-03-31 | Fujitsu Limited | Reticle, reticle inspection method and reticle inspection apparatus |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110473798A (en) * | 2019-08-19 | 2019-11-19 | 上海华力微电子有限公司 | A kind of crystal column surface super-small defect inspection method |
| US11121045B2 (en) | 2019-08-19 | 2021-09-14 | Shanghai Huali Microelectronics Corporation | Method for detecting ultra-small defect on wafer surface |
| CN110473798B (en) * | 2019-08-19 | 2021-10-19 | 上海华力微电子有限公司 | Method for detecting ultra-small-size defects on wafer surface |
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| CN102830594B (en) | 2015-02-11 |
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