CN102820402B - 半导体封装结构 - Google Patents

半导体封装结构 Download PDF

Info

Publication number
CN102820402B
CN102820402B CN201110151958.7A CN201110151958A CN102820402B CN 102820402 B CN102820402 B CN 102820402B CN 201110151958 A CN201110151958 A CN 201110151958A CN 102820402 B CN102820402 B CN 102820402B
Authority
CN
China
Prior art keywords
light
fluorescent material
semiconductor package
wavelength
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110151958.7A
Other languages
English (en)
Other versions
CN102820402A (zh
Inventor
张耀祖
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Original Assignee
Rongchuang Energy Technology Co ltd
Zhanjing Technology Shenzhen Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rongchuang Energy Technology Co ltd, Zhanjing Technology Shenzhen Co Ltd filed Critical Rongchuang Energy Technology Co ltd
Priority to CN201110151958.7A priority Critical patent/CN102820402B/zh
Priority to TW100126494A priority patent/TWI535069B/zh
Priority to US13/366,372 priority patent/US20120313126A1/en
Publication of CN102820402A publication Critical patent/CN102820402A/zh
Application granted granted Critical
Publication of CN102820402B publication Critical patent/CN102820402B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

本发明提供一种半导体封装结构，包括一个封装层、至少一个半导体晶粒以及两个电极。所述封装层包覆所述半导体晶粒以及两个电极，所述半导体晶粒与所述两个电极电性连接，并产生一个第一波长光线。所述封装层包括至少一种荧光粉以及一种光补偿物质，所述荧光粉产生一个第二波长激发光线，所述光补偿物质产生一个第三波长激发光线，所述荧光粉的热衰特性与所述光补偿物质的热衰特性相反。本发明藉由激发光线的热衰特性互补作用，避免所述半导体封装结构因热衰而变色。

Description

半导体封装结构
技术领域
本发明涉及一种半导体封装结构，尤其涉及一种防止因热衰变色的半导体封装结构。
背景技术
半导体封装的LED产业是近几年最受瞩目的产业之一，发展至今，LED产品已具有节能、省电、高效率、反应时间快、寿命周期时间长、且不含汞、具有环保效益等优点。然而由于LED的半导体封装结构为了获得所需要的发光颜色，会在封装层内设置均匀的荧光粉。所述荧光粉吸收所述半导体晶粒(即所述LED芯片)发出的光线，会产生一种特定波长的激发光颜色，通过这些光颜色的混光作用，就能使所述半导体封装结构发出所需颜色的光线。但是，所述半导体封装结构发光所产生的高热，会使所述荧光粉材料产生热衰现象。所述热衰现象是由于发光光子的能量丧失，这与荧光粉的材料组成有相当大的关系。当热衰现象产生时，所述荧光粉激发光的波长也会随着改变，从而导致所述半导体封装结构的发光颜色改变，形成有色差的不佳情况，是目前半导体封装产业努力的课题。
发明内容
有鉴于此，有必要提供一种可避免色差的半导体封装结构。
一种半导体封装结构，包括一个封装层、至少一个半导体晶粒以及两个电极。所述封装层包覆所述半导体晶粒以及两个电极，所述半导体晶粒与所述两个电极电性连接，并产生一个第一波长光线。所述封装层包括至少一种荧光粉以及一种光补偿物质，所述荧光粉产生一个第二波长激发光线，所述光补偿物质产生一个第三波长激发光线，所述荧光粉的热衰特性与所述光补偿物质的热衰特性相反。
上述的半导体封装结构中，由于所述封装层包括所述荧光粉以及所述光补偿物质，两者具有相反的热衰特性，当其中一种热衰特性因温度升高使激发光线波长增加时，另一种热衰特性则会因温度升高使激发光线波长减少, 从而可以维持所述半导体封装结构的发光颜色, 有效解决目前因为荧光粉热衰所导致的半导体封装结构变色问题。
附图说明
图1是本发明半导体封装结构第一实施方式的剖视图。
图2是本发明半导体封装结构第二实施方式的剖视图。
主要元件符号说明
封装结构 10、20
封装层 12、22
荧光粉 122、222
光补偿物质 124、224
半导体晶粒 14、24
导电线 142、242
电极 16、18、26、28
顶面 162
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图对本发明作一具体介绍。
请参阅图1，所示为本发明半导体封装结构第一实施方式的剖视图，所述封装结构10，包括一个封装层12、至少一个半导体晶粒14以及两个电极16、18。所述封装层12包覆所述半导体晶粒14以及两个电极16、18。所述两个电极16、18左右对称设置，其中一个电极16的顶面162提供所述半导体晶粒14设置，所述半导体晶粒14通过导电线142分别与所述两个电极16、18电性连接。所述两个电极16、18具有不同的极性，经导通电力后可以驱使所述半导体晶粒14发光，使所述半导体晶粒14产生一个第一波长光线。所述半导体晶粒14为发光二极管(Light Emitting Diode, LED) 。所述封装层12包覆所述两个电极16、18以及所述两个电极16、18与所述半导体晶粒14的电连接处。所述封装层12包括至少一种荧光粉122以及一种光补偿物质124，所述荧光粉122以及光补偿物质124在所述封装层12内均匀分布。所述封装层12为透明材料，如环氧树脂(epoxy)、硅利康(silicon)或其相关混合物。所述荧光粉122在所述半导体晶粒14产生所述第一波长光线的照射下，产生一个第二波长激发光线，所述光补偿物质124则在所述半导体晶粒14第一波长光线照射下，产生一个第三波长激发光线。所述半导体晶粒14的第一波长光线配合所述荧光粉122的第二波长激发光线以及所述光补偿物质124的第三波长激发光线混光，产生所述封装结构10发出的一个颜色光。一般半导体封装结构发出的颜色光由半导体发出的波长色光与荧光粉的波长色光混光形成，当荧光粉不可避免的热衰特性发生时，荧光粉的波长色光产生变化，就直接影响到一般半导体封装结构发出的混光颜色。本发明所述荧光粉122与所述光补偿物质124具有相反的热衰特性。既，所述荧光粉122的热衰特性是当温度增加时，产生的所述第二波长激发光线的波长增加，而所述光补偿物质124的热衰特性恰好相反，是当温度增加时，产生的所述第三波长激发光线的波长减少。因此，通过所述荧光粉122与所述光补偿物质124热衰特性的互补作用，就能防止所述封装结构10发出的颜色光因热衰而变色。反过来说，当所述荧光粉122的热衰特性是当温度增加时，产生的所述第二波长激发光线的波长减少，相对应的所述光补偿物质124的热衰特性则为当温度增加时，产生的所述第三波长激发光线的波长增加，同样有热衰特性互补的作用。所述荧光粉122可以为YAG荧光粉、TAG荧光粉、硅酸盐(silicate)荧光粉、氮化物(nitride)荧光粉、氢气化物(oxy-hydrogen)荧光粉、硫化物(sulfides)荧光粉。所述光补偿物质124可以为；四氯铜双二乙基铵盐(C4H18N4CuCl4)，其化学式结构可为[(CH3-CH2)‧2NH2]2CuCl4。
请再参阅图2，所示为本发明半导体封装结构第二实施方式的剖视图。所述封装结构20，包括一个封装层22、至少一个半导体晶粒24以及两个电极26、28。所述封装层22包覆所述半导体晶粒24以及两个电极26、28。所述半导体晶粒24通过导电线242分别与所述两个电极26、28电性连接。使所述半导体晶粒24产生一个第一波长光线。所述封装层22包括至少一种荧光粉222以及一种光补偿物质224，所述荧光粉222产生一个第二波长激发光线，所述光补偿物质244产生一个第三波长激发光线。所述荧光粉222以及所述光补偿物质224具有热衰特性的互补作用。以上所述封装结构20特征均相同于第一实施方式的所述封装结构10，因此不再赘述。相较于所述第一实施方式的封装结构10，所述荧光粉222仍然均匀分布在所述封装层22，不同在于，所述光补偿物质224是设置在所述封装层22的表层上，并对应于所述封装结构20的出光面。所述光补偿物质224可以在所述封装结构20出光面吸收所述半导体晶粒24所发射的第一波长光线，激发产生所述第三波长激发光线。所述光补偿物质224第三波长激发光线同样配合所述荧光粉222第二波长激发光线以及所述半导体晶粒24的第一波长光线，混光形成所述封装结构20发出的颜色光。所述光补偿物质224与所述荧光粉222如同第一实施方式具有相反的热衰特性，在热衰现象发生时使激发的光波长产生互补的作用，从而可以维持所述封装结构20发光的颜色，有效解决目前半导体封装结构会因热衰而变色的问题。
综上，本发明半导体封装结构，在所述封装层具有热衰特性相反的所述荧光粉以及所述光补偿物质设置，于所述封装结构因高热产生热衰现象时，使激发光的光波长产生互补的作用，从而可以有效地第防止因热衰而变色的问题。
另外，本领域技术人员还可在本发明精神内做其它变化，当然，这些依据本发明精神所做的变化，都应包含在本发明所要求保护的范围之内。

Claims (10)

1.一种半导体封装结构，包括一个封装层、至少一个半导体晶粒以及两个电极，所述封装层包覆所述半导体晶粒以及两个电极，所述半导体晶粒与所述两个电极电性连接，并产生一个第一波长光线，其特征在于：所述封装层包括至少一种荧光粉以及一种光补偿物质，所述荧光粉产生一个第二波长激发光线，所述光补偿物质产生一个第三波长激发光线，所述荧光粉的热衰特性与所述光补偿物质的热衰特性相反，所述光补偿物质为：四氯铜双二乙基铵盐(C4H18N4CuCl4)，其化学式结构为[(CH3-CH2)·2NH2]2CuCl4。
2.如权利要求1所述的半导体封装结构，其特征在于：所述两个电极左右对称设置具有不同的极性，其中一个电极的顶面设置所述半导体晶粒，所述半导体晶粒通过导电线分别与所述两个电极电性连接。
3.如权利要求1所述的半导体封装结构，其特征在于：所述半导体晶粒为发光二极管。
4.如权利要求1所述的半导体封装结构，其特征在于：所述荧光粉以及光补偿物质在所述封装层内均匀分布。
5.如权利要求1所述的半导体封装结构，其特征在于：所述荧光粉在所述封装层内均匀分布，所述光补偿物质设置在所述封装层的表层上，并对应于所述封装结构的出光面。
6.如权利要求1所述的半导体封装结构，其特征在于：所述封装层为透明材料。
7.如权利要求1所述的半导体封装结构，其特征在于：所述荧光粉为YAG荧光粉或TAG荧光粉、硅酸盐(silicate)荧光粉、氮化物(nitride)荧光粉、氢气化物(oxy-hydrogen)荧光粉、硫化物(sulfides)荧光粉。
8.如权利要求1所述的半导体封装结构，其特征在于：所述荧光粉的热衰特性是随温度增加所述第二波长激发光线的波长增加，而所述光补偿物质的热衰特性是随温度增加所述第三波长激发光线的波长减少。
9.如权利要求1所述的半导体封装结构，其特征在于：所述荧光粉的热衰特性是当温度增加所述第二波长激发光线的波长减少，而所述光补偿物质的热衰特性为当温度增加所述第三波长激发光线的波长增加。
10.如权利要求1所述的半导体封装结构，其特征在于：所述半导体晶粒的第一波长光线配合所述荧光粉的第二波长激发光线以及所述光补偿物质的第三波长激发光线混光产生一个颜色光。
CN201110151958.7A 2011-06-08 2011-06-08 半导体封装结构 Expired - Fee Related CN102820402B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201110151958.7A CN102820402B (zh) 2011-06-08 2011-06-08 半导体封装结构
TW100126494A TWI535069B (zh) 2011-06-08 2011-07-27 半導體封裝結構
US13/366,372 US20120313126A1 (en) 2011-06-08 2012-02-06 Led package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110151958.7A CN102820402B (zh) 2011-06-08 2011-06-08 半导体封装结构

Publications (2)

Publication Number Publication Date
CN102820402A CN102820402A (zh) 2012-12-12
CN102820402B true CN102820402B (zh) 2015-04-29

Family

ID=47292406

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110151958.7A Expired - Fee Related CN102820402B (zh) 2011-06-08 2011-06-08 半导体封装结构

Country Status (3)

Country Link
US (1) US20120313126A1 (zh)
CN (1) CN102820402B (zh)
TW (1) TWI535069B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110416392A (zh) * 2019-07-30 2019-11-05 深圳市永裕光电有限公司 一种封装360°发光二极管

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101442097A (zh) * 2005-03-18 2009-05-27 三菱化学株式会社 发光装置、白光发光装置、照明装置及图像显示装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7495390B2 (en) * 2000-12-23 2009-02-24 Lg Display Co., Ltd. Electro-luminescence device with improved thermal conductivity
US6596195B2 (en) * 2001-06-01 2003-07-22 General Electric Company Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same
EP1573826B1 (en) * 2002-12-13 2007-03-21 Philips Intellectual Property & Standards GmbH Illumination system comprising a radiation source and a fluorescent material
AU2003271383A1 (en) * 2003-12-23 2005-07-07 Hpm Industries Pty Ltd A Solar Powered Light Assembly to Produce Light of Varying Colours
KR100540848B1 (ko) * 2004-01-02 2006-01-11 주식회사 메디아나전자 이중 몰드로 구성된 백색 발광다이오드 소자 및 그 제조방법
US8017035B2 (en) * 2004-08-04 2011-09-13 Intematix Corporation Silicate-based yellow-green phosphors
US20070052342A1 (en) * 2005-09-01 2007-03-08 Sharp Kabushiki Kaisha Light-emitting device
US20110037376A1 (en) * 2008-04-23 2011-02-17 Koninklijke Philips Electronics N.V. Luminous device
US20110013391A1 (en) * 2009-07-16 2011-01-20 Chen yi-qun Light emitting diode (led) marking panel

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101442097A (zh) * 2005-03-18 2009-05-27 三菱化学株式会社 发光装置、白光发光装置、照明装置及图像显示装置

Also Published As

Publication number Publication date
TWI535069B (zh) 2016-05-21
CN102820402A (zh) 2012-12-12
US20120313126A1 (en) 2012-12-13
TW201251135A (en) 2012-12-16

Similar Documents

Publication Publication Date Title
JP5578459B2 (ja) 増強したサーマルシンキングを有する発光ダイオード及び関連する動作方法
US8134165B2 (en) Light emitting device employing non-stoichiometric tetragonal alkaline earth silicate phosphors
TWI457418B (zh) 白光發光二極體裝置、發光裝置及液晶顯示器
TWI458139B (zh) White light emitting diode module
CN202094175U (zh) 一种远荧光粉的led封装结构
TWI613842B (zh) 發光裝置
CN102376845A (zh) 发光二极管的封装结构
CN102709278A (zh) 荧光薄膜平面薄片式led阵列光源
CN202564428U (zh) 半导体发光器件
CN102194801A (zh) 正向发光的发光二极管封装结构及其形成方法
JP4975029B2 (ja) 赤色蛍光体、その製造方法、及びそれを用いた発光素子
CN102820402B (zh) 半导体封装结构
CN101777549A (zh) 化合物半导体元件的封装模块结构及其制造方法
CN102339936B (zh) 发光装置封装结构及其制造方法
CN102244175A (zh) 发光二极管及其制造方法
CN102683550B (zh) 半导体发光器件及其制造方法
CN202695523U (zh) 半导体发光器件
CN104019389A (zh) 一种高效散热的一体化led灯管结构及其生产工艺
CN103022288A (zh) 一种发光二极管及其制造方法
CN206619611U (zh) 一种裸晶封装光引擎
CN201590416U (zh) 发光二极管封装结构
CN204668349U (zh) 免封装led芯片
CN105226164B (zh) 白光led直接贴片式的封装结构
CN102544321A (zh) 半导体发光器件及其制造方法
CN202736967U (zh) 半导体发光器件

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150429

Termination date: 20160608

CF01 Termination of patent right due to non-payment of annual fee