CN102820372A - 用于执行薄膜光伏材料的反应热处理的方法和装置 - Google Patents
用于执行薄膜光伏材料的反应热处理的方法和装置 Download PDFInfo
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- CN102820372A CN102820372A CN2012100235972A CN201210023597A CN102820372A CN 102820372 A CN102820372 A CN 102820372A CN 2012100235972 A CN2012100235972 A CN 2012100235972A CN 201210023597 A CN201210023597 A CN 201210023597A CN 102820372 A CN102820372 A CN 102820372A
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- 239000010453 quartz Substances 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052738 indium Inorganic materials 0.000 claims description 4
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- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
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- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical compound [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 2
- 229910000058 selane Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
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- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000528 Na alloy Inorganic materials 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
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- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004227 thermal cracking Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161439079P | 2011-02-03 | 2011-02-03 | |
US61/439,079 | 2011-02-03 | ||
US13/352,574 | 2012-01-18 | ||
US13/352,574 US20120264072A1 (en) | 2011-02-03 | 2012-01-18 | Method and apparatus for performing reactive thermal treatment of thin film pv material |
Publications (1)
Publication Number | Publication Date |
---|---|
CN102820372A true CN102820372A (zh) | 2012-12-12 |
Family
ID=46671483
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012100235972A Pending CN102820372A (zh) | 2011-02-03 | 2012-02-02 | 用于执行薄膜光伏材料的反应热处理的方法和装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120264072A1 (zh) |
CN (1) | CN102820372A (zh) |
DE (1) | DE102012001980A1 (zh) |
TW (1) | TWI479671B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117005019A (zh) * | 2023-10-07 | 2023-11-07 | 江苏格林保尔光伏有限公司 | 一种Top-Con单晶硅电池片材料制备设备及其制备方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8398772B1 (en) * | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
US8998606B2 (en) * | 2011-01-14 | 2015-04-07 | Stion Corporation | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
CN104937706B (zh) * | 2012-07-09 | 2019-02-26 | 蚌埠玻璃工业设计研究院 | 用于处理衬底的设备和方法 |
ES2862409T3 (es) * | 2012-07-09 | 2021-10-07 | Cnbm Bengbu Design & Res Institute For Glass Industry Co Ltd | Dispositivo y método para el tratamiento térmico de un objeto |
KR101442222B1 (ko) * | 2013-04-05 | 2014-09-24 | 주식회사 아바코 | 열처리 시스템과 열처리 방법 및 그를 이용한 cigs 태양전지의 제조방법 |
US9598795B2 (en) | 2013-04-26 | 2017-03-21 | Illinois Tool Works Inc. | Fiber oxidation oven with multiple independently controllable heating systems |
TWI617684B (zh) * | 2016-10-07 | 2018-03-11 | 國家中山科學研究院 | Integrated fast selenium vulcanization process equipment |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4699805A (en) * | 1986-07-03 | 1987-10-13 | Motorola Inc. | Process and apparatus for the low pressure chemical vapor deposition of thin films |
CN101150049A (zh) * | 2006-09-22 | 2008-03-26 | 东京毅力科创株式会社 | 热处理炉及其制造方法 |
US20080292430A1 (en) * | 2007-05-21 | 2008-11-27 | Centrotherm Photovoltaics Ag | Device for doping, deposition or oxidation of semiconductor material at low pressure |
WO2010091473A1 (en) * | 2009-02-12 | 2010-08-19 | Griffith University | A chemical vapour deposition system and process |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3346034A (en) * | 1966-12-21 | 1967-10-10 | Artisan Ind | Thin film processing apparatus |
FR1597833A (zh) * | 1968-01-15 | 1970-06-29 | ||
JPS6113583A (ja) * | 1984-06-27 | 1986-01-21 | 日本電気株式会社 | 高周波コネクタ |
US4783320A (en) * | 1985-11-25 | 1988-11-08 | The United States Of America As Represented By The Secretary Of The Air Force | Rapid synthesis of indium phosphide |
US6001182A (en) * | 1997-06-05 | 1999-12-14 | Vlsi Technology, Inc. | Waferless boat used as baffle during wafer processing |
DE50015996D1 (de) * | 1999-10-20 | 2010-10-28 | Saint Gobain | Vorrichtung und Verfahren zum gleichzeitigen Temperieren mehrerer Prozessiergüter |
US7910399B1 (en) * | 2008-09-30 | 2011-03-22 | Stion Corporation | Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates |
TWI509107B (zh) * | 2009-03-06 | 2015-11-21 | Centrotherm Photovoltaics Ag | 利用氧族元素源將金屬先驅物薄膜熱轉變成半導體薄膜之方法及裝置 |
US8398772B1 (en) * | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
WO2011108640A1 (ja) * | 2010-03-04 | 2011-09-09 | Jx日鉱日石金属株式会社 | 結晶成長装置、窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体結晶 |
-
2012
- 2012-01-18 US US13/352,574 patent/US20120264072A1/en not_active Abandoned
- 2012-02-02 CN CN2012100235972A patent/CN102820372A/zh active Pending
- 2012-02-02 DE DE102012001980A patent/DE102012001980A1/de not_active Withdrawn
- 2012-02-03 TW TW101103443A patent/TWI479671B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4699805A (en) * | 1986-07-03 | 1987-10-13 | Motorola Inc. | Process and apparatus for the low pressure chemical vapor deposition of thin films |
CN101150049A (zh) * | 2006-09-22 | 2008-03-26 | 东京毅力科创株式会社 | 热处理炉及其制造方法 |
US20080292430A1 (en) * | 2007-05-21 | 2008-11-27 | Centrotherm Photovoltaics Ag | Device for doping, deposition or oxidation of semiconductor material at low pressure |
WO2010091473A1 (en) * | 2009-02-12 | 2010-08-19 | Griffith University | A chemical vapour deposition system and process |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN117005019A (zh) * | 2023-10-07 | 2023-11-07 | 江苏格林保尔光伏有限公司 | 一种Top-Con单晶硅电池片材料制备设备及其制备方法 |
CN117005019B (zh) * | 2023-10-07 | 2023-12-01 | 江苏格林保尔光伏有限公司 | 一种Top-Con单晶硅电池片材料制备设备及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201244145A (en) | 2012-11-01 |
TWI479671B (zh) | 2015-04-01 |
US20120264072A1 (en) | 2012-10-18 |
DE102012001980A1 (de) | 2012-09-06 |
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