CN102810531A - 半导体模块系统、半导体模块及制造半导体模块的方法 - Google Patents
半导体模块系统、半导体模块及制造半导体模块的方法 Download PDFInfo
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Abstract
本发明涉及半导体模块系统、半导体模块及制造半导体模块的方法。一种半导体模块系统,包括:衬底、至少一个半导体芯片、以及至少两个导电性第一连接元件。衬底具有底侧和在垂直方向上与底侧间隔开的顶侧。至少一个半导体芯片设置在顶侧上。第一连接元件中的每一个具有沿垂直于垂直方向的方向从衬底的绝缘载体突出的第一端。半导体系统进一步包括具有N≥1个连接器的连接系统。多个连接器中的第一个包括至少两个导电性第二连接元件。第二连接元件中的每一个具有第一端。第一连接元件中的每一个的第一端可以与第二连接元件之一的第一端导电连接。
Description
技术领域
本申请涉及一种半导体模块。
背景技术
对于例如在电力电子电路中使用的电子单元的电连接器之间的很多电连接来说,要求电连接器具有低电阻、高载流容量,并要求允许进行快速简单的连接和断开。因此,需要一种改进的连接系统以及改进的电连接器方法。
发明内容
根据一方面,半导体模块系统包括衬底、至少一个半导体芯片、以及多个(至少两个)导电性第一连接元件。衬底具有底侧和沿垂直方向与底侧间隔开的顶侧。至少一个半导体芯片设置在顶侧上。第一连接元件中的每一个具有沿垂直于垂直方向的方向从衬底的绝缘载体突出的第一端。半导体系统进一步包括具有多个(N≥1个)连接器的连接系统。连接器的第一个包括至少两个导电性第二连接元件。第二连接元件中的每一个具有第一端。第一连接元件中的每一个的第一端可以与第二连接元件之一的第一端导电连接。
本领域的技术人员在阅读以下的详细说明并查看附图后,将认识到其他的特征和优点。
附图说明
参照以下附图和说明能够更好地理解本发明。图中的部件不一定是按比例绘制的,重点应放在示出本发明的原理上。此外,在图中,相同的编号指的是对应的部件。在附图中:
图1A是具有连接器的功率半导体模块系统的截面图。
图1B是图1A的功率半导体模块系统的顶视图。
图2A是由图1A的功率半导体模块系统形成的功率半导体模块的截面图。
图2B是图2A的功率半导体模块的顶视图。
图3是具有坚固底板的功率半导体模块的截面图。
图4是具有带组装用开口的连接器的功率半导体模块的截面图。
图5是具有坚固底板的功率半导体模块的截面图。
图6是具有包括压配触头(press-fit contact)的连接器的功率半导体模块系统的一部分的截面图。
图7是具有包括弹簧触头的连接器的功率半导体模块系统的一部分的截面图。
图8A是具有通过铆接(rivet connection)方式连接的连接器的功率半导体模块系统的一部分的截面图。
图8B是完成铆接后图8A的功率半导体模块系统的一部分的截面图。
图9A是具有框架的功率半导体模块系统的顶视图,所述框架由通过形状配合连接(form-fitting connection)而彼此连接的框架元件组成。
图9B是图9A的功率半导体模块系统的侧视图。
具体实施方式
在以下的详细说明中,参照了附图,附图构成说明的一部分,并且其中通过示例的方式示出了实现本发明的具体实施方式。因此,方位术语,例如“顶”、“底”、“前”、“后”、“前缘”,“后缘”等参照所描述的图的方向进行使用。由于实施方式的部件可以定位在多个不同的方向上,所以方位术语用于说明性目的,而非限制性的。要理解的是,可采用其他实施方式,且可在不脱离本发明范围的情况下做出结构或逻辑上的变化。因此,下列详细说明不应理解为对本发明的限制,本发明的范围由所附的权利要求书限定。要理解的是,除非另有说明,否则本文描述的各种示例性实施方式的特征可以相互组合。
现在参照图1A,其示出了功率半导体模块系统的截面,图1B是功率半导体模块的顶视图。图1A的截面沿图1B所示的E-E截取的面。功率半导体模块系统包括衬底装置8,以及用于电连接衬底装置8的多个(N≥1个)连接器6。衬底装置8包括具有绝缘载体20的衬底2、任选的顶部金属化层21、以及任选的底部金属化层22。绝缘载体20使顶部金属化层21与底部金属化层22电绝缘。
为了允许对功率半导体芯片1进行充分的冷却,低传热阻力是绝缘载体20的重要属性。因此,绝缘载体20的材料和厚度必须满足功率半导体模块的要求。例如,绝缘载体20可以是陶瓷,使得衬底2形成陶瓷衬底。例如,绝缘载体20可包括下列材料中的一种或由下列材料中的一种组成:氧化铝(Al2O3)、氮化铝(AlN)、氮化硅(Si3N4)。然后,例如,绝缘载体20中的一个、一些或全部的厚度可以在0.2mm至2mm之间。在一些实施方式中,衬底2中的至少一个可以是直接覆铜衬底(DCB衬底)、或直接覆铝衬底(DAB衬底)、或活性金属钎焊衬底(AMB衬底)。
衬底2具有底侧2b和在垂直方向v上与底侧2b间隔开的顶侧2a。至少一个半导体芯片1,例如MOSFET(金属氧化物半导体场效应晶体管)、IGBT(绝缘栅双极晶体管)、J-FET(结型场效应晶体管)、二极管或晶闸管设置在衬底2的顶侧2a上。
衬底装置8进一步包括多个用于电连接衬底装置8的至少两个导电性第一连接元件3。第一连接元件3中的每一个可具有第一端31,各个连接元件3在第一端31沿垂直于垂直方向v的方向从绝缘载体20突出。为了使一个、一些或所有连接元件3与顶部金属化层21电绝缘,可以将第一绝缘层91设置在顶部金属化层21和第一连接元件3之间便于绝缘。任选地,第二绝缘层92可以设置在第一连接元件3的背向衬底2的那一侧上。在图1B中,第二金属化层92被去掉,顶部金属化层21的轮廓用虚线表示。
连接器6中的第一个包括至少两个导电性第二连接元件4。第二连接元件4中的每一个具有第一端41和第二端42。第一连接元件3中的每一个在第一端31可以与第二连接元件4之一的对应第一端41导电连接。在图1B中可以看到,在连接器6中,可以将两个以上第二连接元件4固定在公共底座5上,例如介电底座(dielectric mounting)(例如塑料底座)上。为了将一个、两个或更多个第二连接元件4紧固在底座5中,可以将各自的第二连接元件4插入(insert)预制底座5中和/或成型(mold)在底座5中。
连接器6用于允许将衬底装置8简单地电气连接至外围设备,例如带线。在功率半导体模块的组装状态下,功率半导体模块的外部电连接由第二连接元件4的第二端42实现。为此,在功率半导体模块的组装状态下,可以从功率半导体模块的外侧使用(accessible)第二连接元件4的第二端42。例如,一个、两个、多于两个或所有第二连接元件4的第二端42可以在各自底座5的上侧5a进行使用,由此上侧5a在垂直方向v上与底座5的下侧5b间隔一定距离。例如,一个、两个、多于两个或所有第二连接元件4的第二端42可以在底座5的上侧5a从底座5突出。尽管第二端42设计成分叉的压配连接器,但其他设计如锻接接触件(weld contact)、螺钉接触件等。
为了使连接器6的所有第二连接元件4与衬底装置8电连接,可以将各自的连接器6沿图1A和1B中用箭头表示的垂直于垂直方向v的方向向衬底装置8推动,使得第二连接元件4中的每一个的第一端41与第一连接元件3之一的对应第一端31电接触。从而,连接器6的第二连接元件4的第一端41和第一连接元件3的对应第一端31之间的一个、两个、多于两个或全部连接可以是插塞式连接。例如,连接器6的第二连接元件4的第一端41中的每一端可以形成为适用于容纳第一连接元件3之一的对应第一端31的插座。相应地,第一连接元件3的各个第一端31可以形成为插头。
根据一个实施方式,第一连接元件3可以形成为金属化层或可以由金属化层形成。例如,这样的金属化层沿垂直方向v可以具有厚度d3,就各自的第一连接元件3而言,平均厚度d3大于50μm和/或小于200μm。然后,这样的金属化层沿垂直方向v可以具有小于600μm的最大厚度d3max。为了实现低电阻,第一连接元件3可以由铜或具有至少90重量%的铜的合金构成。
衬底装置8可以根据PLIT技术(PLIT=电源层互连技术)进行制造。为此,在第一步骤中,衬底2可以设置并配备至少一个功率半导体芯片1。然后,被形成为连续层的第一绝缘层91可以在第二步骤中沉积在衬底2和功率半导体芯片1的背向衬底2的底侧2b的侧面上,并且在随后的第三步骤中被图案化以获得第一绝缘层91。第一绝缘层91在功率半导体芯片1的顶侧1a上方和顶部金属化层21的某些部分的上方具有开口或切口,使得功率半导体芯片1和顶部金属化层21的顶侧接触通过开口和/或切口实现。然后,在随后的第四步骤中,金属层可以设置在第一绝缘层91的上方以便制造第一连接元件3。金属层可以被预加工成结构化金属片(例如引线框)或连续金属片,或者例如以结构化或连续方式作为沉积层沉积在第一绝缘层91和开口或切口上方。例如,用沉积工艺如PVD(物理气相沉积)或CVD(化学气相沉积)工艺制造沉积层。第一连接元件3还可以被预加工成单一部件,安装在各自的目标位置。在用沉积工艺制造金属层的情况下,在沉积工艺之前提供载体。载体允许将形成第一端31的材料沉积,并且在要制造的金属层的底侧(即金属层面向衬底2的一侧)上支撑第一端31。完成沉积工艺后,至少部分移除载体,以便释放载体材料的第一端31。例如,可以给要移除的部分打孔并拆除。利用用于载体的、对第一连接元件3的材料没有较强的粘附性的材料可以使拆除过程更方便。移除载体的另一种可能性是对于沉积金属层和衬底2选择性蚀刻载体。至少部分地移除载体的步骤可以在第五步骤之前或之后,在第五步骤中第二绝缘层92沉积在第一连接元件3之上。
代替提供并随后图案化连续层,图案化层可以直接用图案化方式制造,例如通过打印技术或通过将预加工元件提供并连接至层下方。例如,第一连接元件3可以设置成金属带,焊接或导电粘附在相应功率半导体芯片1的顶侧1a上和/或顶部金属化层21的相应部分上,即,在第一绝缘层91中的开口或切口区域。
现在参照图2A,示出了组装状态下的图1A和1B的功率半导体模块系统,也就是说,所有连接器6与衬底装置8的第一连接元件3电连接。在组装状态下,至少一个半导体芯片1和衬底装置2可以被框架包围。在图1A、1B、2A、2B的实施方式中,框架一部分由连接器6结合至少一个桥接元件7构成。这样的桥接元件7用于使框架完整。例如,桥接元件7可以由与底座5相同的材料构成。在其他实施方式中,框架可以仅由连接器6组装而成,由此每个连接器6配备有至少一个第二连接元件4。为了形成稳定的自撑式框架,框架元件(即所有连接器6和所有桥接元件7)可以通过合适的接合方法彼此直接相连,例如通过将框架元件的相邻元件直接粘附、螺接或嵌合在一起。
现在参照图3,图3示出了一种功率半导体模块,其与图2A和2B的功率半导体模块的不同之处在于该模块还包括坚固底板(solid baseplate)10。底板10的厚度可以为0.1mm至20mm,具有低热阻以允许将至少一个功率半导体芯片1产生的废热排至散热器(未示出),该散热器可以连接至底板10的背向至少一个功率半导体芯片1的一侧。例如,底板10可以由铜或铝等金属制成或由具有至少铜和铝之一的合金制成。在其他实施方式中,底板10可以由MMC材料(MMC=金属基复合材料)制成。底板10可以通过焊接(solder)、烧结或粘合而机械接合至衬底2的底侧2b。可以在连接器6与衬底装置8连接之前或之后,将底板10接合至衬底2。
图4示出了一种功率半导体模块,其与图2A的功率半导体模块的不同之处在于连接器6的底座5配备有任选的安装法兰51。这样的安装法兰51可进一步包括插入螺钉或另一种安装工具的安装开口52。二者择一地或者另外地,桥接元件7可以配备有任选包括安装开口的安装法兰。
与图2A的功率半导体模块的另一不同之处在于在衬底装置8的背向衬底2的底侧2b的一侧上设置任选的盖板12。
与图4的功率半导体模块相比,图5所示的功率半导体模块还具有底板10。底板10可以与图3的功率半导体模块的底板10一样,由相同的材料制成、可以具有相同的厚度、并且可以以相同的方式与衬底2接合。如图5所示,底板10可以具有任选的安装开口11。在图5的实施方式中,安装开口11与法兰51的安装开口52对准。
现在参照图6,图6示出了功率半导体模块系统的一部分,该功率半导体模块系统被解释为第一连接元件3的第一端31和第二连接元件4的第一端41之间压配连接(press-fit connection)的功率半导体模块。通过将第一连接元件3的第一端31插入由第二连接元件4的第一端41形成的插座,并在垂直于垂直方向v的方向朝衬底装置8按压连接器6,第一连接元件3的第一端31通过压配连接可靠地保持在插座中。这样的压配连接可以被设计用于形成冷锻接连接或接触锻接连接。
图7的功率半导体模块系统与参照图6解释的功率半导体模块系统的不同之处在于第二连接元件42的第一端41被形成为接触弹簧。将第一连接元件3的第一端31插入连接器6之后,接触弹簧被预拉伸(pretension),从而分别在第一和第二连接元件3和4之间构成紧密的电接触。
在图8A的实施方式中,第一连接元件3的第一端31具有安装孔33,在第一连接元件3的第一端31插入连接器6并垂直于垂直方向v将连接器6压向衬底装置8的第一步骤(见标有“1”的箭头)后,该安装孔与对应第二连接元件4的第一端41中形成的安装孔43对齐。在接下来的第二步骤中(见标有“2”的箭头),将锁杆或铆钉15插入两个安装孔33和43中。图8B示出了插入锁杆15后的功率半导体模块。
在图6、7、8A和8B中,用虚线示出任选的底板10。这样的底板10可以与先前解释的底板10具有相同的特征。
现在参照图9A,图9A示出了一种功率半导体模块系统,其与图1A和1B的功率半导体模块系统的不同之处在于框架元件(即框架的连接器6和桥接元件7)彼此机械连接,使得框架为自撑式框架。为了实现这样的框架,框架元件6、7的相邻元件可以通过可松开或不可松开的锁紧连接(locking connection)(例如按扣连接(snapping connection)或锁扣连接(latching connection))而彼此连接。在图9A的实施方式中,一部分框架元件6、7具有可以插入图9A中隐藏的用虚线表示的桥接元件7中的对应容纳开口75中的突出部。图9B是组装后的功率半导体模块的侧视图。
根据本文的实施方式显而易见的是,衬底装置8的第一端31可以沿衬底2的相对侧设置。
空间上的相对术语如“在…之下”,“在下面”,“下部”,“在…之上”,“上部”等用于方便进行描述,解释一个元件相对于另一个元件的定位。除了图中描述的不同方向之外,这些术语还旨在包含设备的其他不同方向。此外,术语例如“第一”,“第二”等也用于描述各种不同的元件、区域、部分等,但并不是限制性的。在整个说明书中类似术语指的是类似元件。
本文所用的术语“具有”、“包含”、“包括(including)”、“包括(comprising)”等是开放性术语,表示存在所述的元件或特征,但不排除其他元件或特征。除非上下文有明确的说明,否则冠词“a”,“an”和“the”旨在包括复数和单数。
鉴于上述范围的变化和应用,应理解本发明不受前述描述的限制,也不受附图的限制。相反,本发明仅受所附权利要求书及其法律上的等同物的限制。
Claims (24)
1.一种半导体模块系统,包括:
衬底,具有底侧和在垂直方向上与所述底侧间隔开的顶侧;
至少一个半导体芯片,设置在所述顶侧上;
至少两个的多个导电性第一连接元件,其中,所述第一连接元件中的每一个的第一端沿垂直于所述垂直方向的方向从所述衬底的绝缘载体突出;
连接系统,包括N≥1个的多个连接器;
其中,所述连接器中的第一个包括至少两个导电性第二连接元件,所述第二连接元件中的每一个具有第一端;
其中,各个所述第一连接元件的第一端能与所述第二连接元件之一的第一端导电连接。
2.根据权利要求1所述的半导体模块系统,其中,各个所述第一连接元件的第一端通过插塞式连接与所述第二连接元件之一的第一端导电连接。
3.根据权利要求1所述的半导体模块系统,其中,各个所述第一连接元件被形成为在垂直方向上的平均厚度小于200μm的金属化层。
4.根据权利要求1所述的半导体模块系统,其中,各个所述第一连接元件被形成为在垂直方向上的最大厚度小于600μm的金属化层。
5.根据权利要求1所述的半导体模块系统,其中,所述第二连接元件的各个第一端被形成为插座,所述插座被配置用于容纳所述第一连接元件之一的第一端。
6.根据权利要求1所述的半导体模块系统,其中,所述第一连接元件的各个第一端被形成为插头。
7.根据权利要求1所述的半导体模块系统,其中,所述第一连接元件的第一端沿所述衬底的相对侧设置。
8.一种半导体模块,包括:
衬底,具有底侧和在垂直方向上与所述底侧间隔开的顶侧;
至少一个半导体芯片,设置在所述顶侧上;
至少两个的多个导电性第一连接元件,其中,所述第一连接元件中的每一个的第一端沿垂直于所述垂直方向的方向从所述衬底的绝缘载体突出;
连接系统,包括N≥1个的多个连接器;
其中,所述连接器中的第一个包括至少两个导电性第二连接元件,所述第二连接元件中的每一个具有第一端;
其中各个所述第一连接元件的第一端与所述第二连接元件之一的第一端导电连接。
9.根据权利要求8所述的半导体模块,其中,所述第一连接元件中的至少一个与所述第二连接元件之一形成压配连接。
10.根据权利要求8所述的半导体模块,其中,所述第二连接元件中的至少一个第一端被形成为接触弹簧。
11.根据权利要求8所述的半导体模块,其中,所述第一连接元件中的至少一个第一端通过锁杆或铆钉与所述第二连接元件之一的第一端连接。
12.根据权利要求8所述的半导体模块,其中,所述第一连接元件中的至少一个第一端焊接或锻接至所述第二连接元件之一的第一端。
13.根据权利要求8所述的半导体模块,其中,所述第一连接器包括固定所述第二连接元件的介电底座。
14.根据权利要求13所述的半导体模块,其中,所述第二连接元件插入和/或成型在所述介电底座中。
15.根据权利要求13所述的半导体模块,其中:
所述介电底座具有下侧和在垂直方向上与所述下侧间隔开的上侧;并且
所述第二连接元件中的每一个具有能在在所述上侧使用的第二端。
16.根据权利要求8所述的半导体模块,其中,所述连接系统包括围绕所述半导体芯片并且部分或全部通过N≥2的多个连接器形成的框架。
17.根据权利要求8所述的半导体模块,其中,所述衬底包括设置在所述绝缘载体上的顶部金属化层。
18.根据权利要求17所述的半导体模块,其中,所述半导体芯片设置在所述顶部金属化层的背向所述绝缘载体的那一侧上。
19.根据权利要求17所述的半导体模块,其中,在所述顶部金属化层和所述第一连接元件之间设置有绝缘层。
20.根据权利要求8所述的半导体模块,其中,所述第一连接元件的第一端沿所述衬底的相对侧设置。
21.一种制造半导体模块的方法,包括:
提供衬底装置,该衬底装置包括:
具有底侧和在垂直方向上与所述底侧间隔开的顶侧的衬底;
设置在所述顶侧上的至少一个半导体芯片;
至少两个的多个导电性第一连接元件,其中,所述连接元件中的每一个的第一端沿垂直于所述垂直方向的方向从所述衬底的绝缘载体突出;
提供包括N≥1个的多个连接器的连接系统,其中,所述连接器中的第一个包括至少两个导电性第二连接元件,并且所述第二连接元件中的每一个具有第一端;
使各个所述第一连接元件的第一端与所述第二连接元件之一的第一端导电连接。
22.根据权利要求21所述的方法,其中,将所述第二连接元件的各个第一端插入所述第一连接元件之一的第一端。
23.根据权利要求21所述的方法,其中,在插入步骤中,将N个连接器中的每一个在垂直于所述垂直方向的方向上推向所述衬底装置。
24.根据权利要求21所述的方法,其中,所述第一连接元件的第一端沿所述衬底的相对侧设置。
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US13/152,338 US8643188B2 (en) | 2011-06-03 | 2011-06-03 | Connecting system for electrically connecting electronic devices and method for connecting an electrically conductive first connector and electrically conductive second connector |
US13/152,338 | 2011-06-03 |
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CN108257923A (zh) * | 2016-12-29 | 2018-07-06 | 比亚迪股份有限公司 | 一种散热基板及其制备方法和应用以及电子元器件 |
CN108257922A (zh) * | 2016-12-29 | 2018-07-06 | 比亚迪股份有限公司 | 一种散热基板及其制备方法和应用以及电子元器件 |
CN110100308A (zh) * | 2016-12-20 | 2019-08-06 | 西门子股份公司 | 底侧具有支撑结构的半导体模块 |
CN110931437A (zh) * | 2018-09-19 | 2020-03-27 | 英飞凌科技股份有限公司 | 功率半导体模块装置和用于功率半导体模块装置的外壳 |
CN112309994A (zh) * | 2019-07-26 | 2021-02-02 | 英飞凌科技股份有限公司 | 半导体模块装置 |
CN113496956A (zh) * | 2020-03-18 | 2021-10-12 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
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JP5787784B2 (ja) * | 2012-02-15 | 2015-09-30 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
DE102013110818A1 (de) * | 2013-09-30 | 2015-04-02 | Semikron Elektronik Gmbh & Co. Kg | Leistungshalbleitereinrichtung |
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CN112309994A (zh) * | 2019-07-26 | 2021-02-02 | 英飞凌科技股份有限公司 | 半导体模块装置 |
CN112309994B (zh) * | 2019-07-26 | 2024-04-26 | 英飞凌科技股份有限公司 | 半导体模块装置 |
CN113496956A (zh) * | 2020-03-18 | 2021-10-12 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
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DE102012208146A1 (de) | 2012-12-06 |
US8643188B2 (en) | 2014-02-04 |
US20120306091A1 (en) | 2012-12-06 |
CN102810531B (zh) | 2015-09-09 |
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