CN102804381A - 将小芯片施加在基板上 - Google Patents
将小芯片施加在基板上 Download PDFInfo
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- CN102804381A CN102804381A CN2010800280939A CN201080028093A CN102804381A CN 102804381 A CN102804381 A CN 102804381A CN 2010800280939 A CN2010800280939 A CN 2010800280939A CN 201080028093 A CN201080028093 A CN 201080028093A CN 102804381 A CN102804381 A CN 102804381A
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Abstract
一种在基板上提供小芯片(22)的方法,该方法包括依次提供以下步骤:提供基板(10);在基板上将粘接剂(12)涂覆成层,在分离的小芯片位置(22)将多个第一小芯片(20)放置在粘接剂层(12)上,以将第一小芯片粘接至粘接剂层,其中,多个第一小芯片中的一个或更多个未粘接至该粘接剂层,使得第一小芯片在粘接小芯片位置粘接至粘接剂层,并且第一小芯片在非粘接小芯片位置(24)未粘接;局部处理非粘接小芯片位置处的粘接剂层,用于调整非粘接位置处的粘接剂层以接收第二小芯片;将第二小芯片放置在经调整的非粘接小芯片位置处的粘接剂层上,以将第二小芯片粘接在非粘接位置处的粘接剂层,以及固化该粘接剂。
Description
相关申请的交叉引用
参考共同受让的于2008年8月14日提交的、名称为“OLED Device WithEmbedded Chip Driving”、发明人为Dustin L.Winters等人、申请号为12/191,478的美国专利申请,该申请公开的内容被合并于此。
技术领域
本申请涉及将小芯片施加在基板上的方法。
背景技术
平板显示装置与运算装置结合广泛用于便携式装置中,并广泛用于娱乐装置(如电视)。这类显示器通常运用分布在基板上的多个像素来显示图像。通常利用无源矩阵控制或有源矩阵控制来控制显示装置,无源矩阵控制运用基板外部的电子线路,有源矩阵控制运用直接形成在基板上的电子线路。为了生产高性能显示器,已经利用有源矩阵(AM)驱动线路制造出有机发光二极管(OLED)显示装置。在美国专利No.5550066中公开了这类AM OLED显示装置的示例。一般通过在基板上形成薄膜晶体管(TFT)并且运用单独的电路来控制显示器中的各个发光像素来得到有源矩阵线路。
有源矩阵装置中,有源控制元件包括形成在例如非晶硅或者多晶硅基板上并被分布到平板显示器基板上的半导体材料的薄膜。通常,各个显示器子像素由一个控制元件控制并且各个控制元件包括至少一个晶体管。例如,在简单的有源矩阵有机发光显示器中,各个控制元件包括两个晶体管(一个选择晶体管和一个功率晶体管)以及一个用来存储电荷的电容,电荷用于确定子像素的亮度。各个发光元件通常采用独立的控制电极和公共电极。通常通过在基板上形成为金属线的数据信号线、选择信号线、电源接头和地接头来提供对发光元件的控制。有源矩阵元件不必限于显示器,并且可以分布在基板上并可以在需要空间分布控制的其它应用中使用。
薄膜晶体管(TFT)由半导体(如非晶硅或者晶体硅)薄层(通常100-400nm)构成。然而,这种薄膜半导体的特性对构造高质量显示器常常是不够的。例如,由于非晶硅的阈值电压(Vth)以及载流子迁移率随着持久的使用时间而发生改变,因此非晶硅是不稳定的。由于结晶过程,晶体硅在整个基板上常常在阈值电压(Vth)以及载流子迁移率方面具有很大程度的变化性。由于OLED装置通过电流输入注入而操作,因此TFT的变化性能够导致OLED像素的亮度的变化性,并且使显示器的视觉质量下降。已经提出了新的补偿方案(如在各个像素中添加另外的TFT线路)来补偿TFT的变化性,然而这种补偿增加了复杂性,这会对产量、成本产生负面影响或者会减小OLED发射区域。此外,当将薄膜晶体管制造工艺应用于较大的基板时,比如用于大平板电视应用时,变化性和工艺成本增加。
避免薄膜晶体管的这些问题的一个方法是代替为在半导体基板中制造传统的晶体管,然后将这些晶体管转移到显示器基板上。Matsumura等人的公开号为2006/0055864A1的美国专利申请教导了一种使用附在显示器内的半导体集成电路(IC)装配显示器的、用于控制像素元件的方法,其中IC中嵌入的二极管代替现有技术显示器的TFT所执行的一般功能。Matsumura教导了半导体基板应当变薄,例如通过抛光变薄至20微米至100微米之间的厚度。然后该基板被切成包含集成电路的更小的片,以下称为“小芯片”。Matsumura教导了一种例如通过刻蚀、喷砂、激光束加工或者切成小片来切割半导体基板的方法。Matsumura还教导了一种拾取方法,其中使用具有应于希望的定位的真空孔的真空吸盘系统对小芯片进行有选择地拾取。然后小芯片被传送到显示器基板,其中将小芯片嵌入到厚的热塑性树脂中。示出了像素控制装置内的布线互联以及从总线和控制电极到像素控制装置的连接。为了成功地对小芯片进行布线互联,有必要以高的精度和可靠度对小芯片进行定位。如果基板被污染或者被不正确地准备,则小芯片不能恰当地粘附或对齐,这样会妨碍基板正确地操作。特别地,小芯片不能呈现在某些位置或者能够呈现但不能正确地定位。
因此,需要一种针对缺失或者未正确对齐的小芯片而校正基板的制造工艺。
发明内容
根据本发明,在基板上提供小芯片的方法包括依次提供以下步骤:
(a)提供基板;
(b)在所述基板上将粘接剂涂覆成层;
(c)在分离的小芯片位置将多个第一小芯片放置在所述粘接剂层上,以将第一小芯片粘接至所述粘接剂层,其中,所述多个第一小芯片中的一个或更多个未粘接至所述粘接剂层,使得第一小芯片在粘接小芯片位置粘接至所述粘接剂层,并且第一小芯片在非粘接小芯片位置未粘接;
(d)局部处理所述非粘接小芯片位置处的粘接剂层,用于调整所述非粘接位置处的粘接剂层以接收第二小芯片;
(e)将第二小芯片放置在经调整的非粘接小芯片位置处的所述粘接剂层上,以将第二小芯片粘接在所述非粘接位置处的粘接剂层;
(f)固化所述粘接剂。
本发明的优点在于能够矫正基板上缺失或者未对齐的小芯片,由此提高了产量。
附图说明
图1是示出本发明的方法的实施方式的流程图;
图2A-2C是根据本发明实施方式的在组装的不同阶段的基板、粘结层和小芯片的平面图;
图3是根据本发明实施方式的具有颗粒污染的基板的横截面;
图4是根据本发明实施方式的具有颗粒污染的基板以及激光烧蚀装置的横截面;
图5是根据本发明实施方式的具有颗粒污染的基板、微型气体喷射器、激光烧蚀装置以及抽吸装置的横截面;
图6是根据本发明实施方式的具有埋入的颗粒污染的基板以及微型分配器的横截面;
图7是根据本发明实施方式的具有埋入的颗粒污染的基板以及位于埋入的颗粒上方的第二小芯片的横截面;
图8是根据本发明实施方式的具有埋入的颗粒污染的基板、未对齐的第一小芯片以及位于埋入的颗粒和第一小芯片上方的第二小芯片的横截面;
图9是根据本发明实施方式的具有颗粒污染的基板和压印器的横截面;
图10A是根据本发明实施方式的具有颗粒污染的基板和具有粘接涂覆层的压印器的横截面;以及
图10B是根据本发明实施方式的在非粘接位置处具有未对齐小芯片的基板以及具有粘接涂层的压印器的横截面。
由于层的厚度尺寸可以在亚微米范围,而代表横向装置尺寸的特征可以处于从10微米到1米或者更多的范围,因此附图必要地为示意性的。因此,附图是为了易于视觉呈现而非为了尺寸上的精确性而绘制。
具体实施方式
本发明致力于在基板上设置小芯片的制造方法,各个小芯片包括分离的、独立的基板,该基板形成具有控制线路和连接垫的集成电路。小芯片分布和放置在基板上以局部地控制形成在基板上或位于基板上方的元件。然而,在基板上放置小芯片的过程会失败,这种失败导致在基板上缺失小芯片或未对齐的小芯片。因此,根据本发明,提供一种用于校正基板的方法,使得在基板上希望的位置上适当地放置小芯片。
参照图1,在本发明的一个实施方式中,在基板上提供小芯片的方法依次包括以下步骤:提供(步骤100)基板;在基板上将粘接剂涂覆(步骤110)成层;在分离的小芯片位置处将多个第一小芯片置于(步骤120)粘接剂层上,以将第一小芯片粘接到粘接剂层,其中多个第一小芯片中的一个或者更多个不粘接到粘接剂层,使得第一小芯片在粘接小芯片位置处粘接到粘接剂层,第一小芯片在非粘接小芯片位置处不粘接;在非粘接小芯片位置处局部地处理(步骤140)粘接剂层,以调整非粘接位置处的粘接剂层来接收第二小芯片;将第二小芯片放置(步骤150)在经调整的非粘接小芯片位置处的粘接剂层上,以将第二小芯片粘接到非粘接位置处的粘接剂层上;固化(步骤170)粘接剂,以将小芯片贴附到基板。适当的粘接剂例如包括:苯并环丁烯、聚酰亚胺、以及商业上可购买的材料,比如来自罗门哈斯(Rohm and Haas)的“Intervia Photodielectric 8023”。粘接剂被选择为具有如下特性:其轻易地粘接和稳固小芯片、能够形成平坦化表面、能够被固化或者能够如下所述地被固化。
根据本发明,被粘接的小芯片是以正确的排列和旋转在适当的粘接小芯片位置粘接到粘接剂层的小芯片。非粘结位置是这样的位置:在该位置上不存在小芯片,或者在该位置上存在小芯片,但是小芯片没有被正确定位、对齐或者旋转。因此在非粘接小芯片位置上不放置第一小芯片意味着在该小芯片位置上没有被正确地放置、对齐和旋转的小芯片。
在非粘接小芯片位置通过局部处理该粘接剂层以在非粘接位置调整粘接剂意味着以某种方式,例如通过机械、化学或者光学处理,或者通过在非粘接位置添加、改变或者移除材料,改变粘接剂层的处于非粘接位置的部分。通过局部处理还意味着以某种方式,比如通过机械、化学或者光学处理,或者通过添加、改变或者移除材料,改变非粘接位置上的未对齐的小芯片。通过局部处理还意味着在非粘接区域移除、掩埋、消灭任何不期望的材料(比如污染性化学材料或者颗粒),或者以另外的方式改变任何不期望的材料性质、位置或相对于其它材料的方位。
参考图2A,示出了基板10。在基板10可以使图案化的导体或者其它层或者元件位于基板10上。如图2B所示,粘接剂层12涂覆在基板10上。粘接剂层12可以是可固化的,使得粘接剂层12在被涂覆时仅提供轻微的粘附力,而在固化时提供非常强的粘附力,以在任何后续的工艺步骤(例如光刻或者材料涂覆步骤,如旋涂、帘式涂布,蒸发、溅射或刻蚀)期间将小芯片牢固地粘接在适当的位置。参见图2C,例如通过使用如Matsumura描述的真空吸盘进行定位,在分离的小芯片位置将第一小芯片20置于基板10和粘接剂层12上。粘接剂层12即便没有被固化,其对于在随后的固化步骤之前将第一小芯片20粘接到适当的位置也是足够的。然而根据本发明的方法,只将第一小芯片20中的一些在粘接小芯片位置22粘接到粘接剂层12。第一小芯片20的一部分在非粘接位置24没有正确地粘接到粘接剂层12,这是由于多种原因,例如可以存在污染性材料(如颗粒50),如果粘接剂涂覆操作没有提供均匀的涂覆则可以不存在粘接剂材料,或者粘接剂材料可能在非粘接位置暴露于化学物质而丧失其粘接性能。简单起见,图2C示出了颗粒50,但本发明并不限于此。参见侧视的图3,第一小芯片20粘接到基板10上的粘接剂层12。由于存在颗粒50,第一小芯片20A没有正确粘接到粘接剂层12。小芯片20A可以由小芯片安置装置(未示出)移除或者小芯片可以被移动到粘接剂层12上不同的位置或方向。
根据本发明的各种实施方式,可以采用多种方式校正缺失的小芯片。参见图4,本发明的一个实施方式中,烧蚀装置60,例如激光烧蚀装置,提供辐射束62,该辐射束62照射非粘接小芯片位置24的粘接剂层并蒸发颗粒50。如本实施方式所采用的,照射粘接剂层12包括照射其它材料,如可以存在于粘接剂层12上或粘接剂层12内部的污染性颗粒15。颗粒15可以被彻底消灭或者可以被分成不会妨碍小芯片粘接的很多小块。在本发明的一个实施方式中,例如通过热辐射或者特定频段(如红外)的辐射,可以使粘接剂层12固化。可以选择辐射束62使其不固化粘接剂,由此在接收第二小芯片的条件下,保持非粘接小芯片位置24处的粘接剂层12的粘接性能。例如可以通过热辐射或者红外辐射和用于蒸发颗粒50的紫外激光束来固化粘接剂。
在图5中所示的另一实施方式中,微型气体喷射装置40可以将颗粒50A从粘接剂层12吹走,并且使颗粒50B悬浮在大气中(或真空中),以由气压比周围气压低的微型抽吸装置42抽走。在本发明另一实施方式中,可以由微型气体喷射装置40和微型抽取装置42补充烧蚀装置60,使得驱离的颗粒50B或保留在粘接层上的颗粒50C被蒸发,并且蒸汽被微型抽吸装置42移除。另选地,可以驱离颗粒并然后再将其蒸发。
在本发明的另选实施方式中,喷墨的或者微型分配器44可以从颗粒50上方的粘接剂供给装置45分配附加粘接剂的小液滴,以将颗粒50掩埋、驱离或者移到新的位置,并且在粘接剂层12上方形成附加粘接剂的局部附加粘接剂层14。附加粘接剂的局部附加粘接剂层14可以平坦化非粘接小芯片位置处的粘接剂层12的表面。在所有情况下,附加粘接剂小液滴不必形成局域附加粘接剂层14。例如,附加粘接剂的小液滴15可以将颗粒50驱赶到不同的位置,在这个位置颗粒将不会妨碍小芯片粘接到由粘接剂的小液滴15所形成的局部附加粘接剂层14的平坦化的表面。在本发明的一个实施方式中,附加粘接剂的小液滴15包括与粘接剂层12中所采用的相同的材料。如图7中所示,一旦颗粒50被附加粘接剂的小液滴50掩埋或者驱离,就可以将第二小芯片2B置于局部的附加粘接剂层14上。
如图8所示,局部的附加粘接剂层14还可以用来掩埋未对齐的小芯片20A。根据本发明,非粘接小芯片可以被粘接,但为未对齐的小芯片。因此,可以在非粘接小芯片位置24存在小芯片,并且附加粘接剂的小液滴15可以形成掩埋未对齐的小芯片20A的局部附加粘接剂层14。在图8中,未对齐的小芯片20A示为被旋转,以表示未对齐。一旦未对齐的小芯片20A被局部附加粘接剂层14掩埋,就可以在局部附加粘接剂层14上正确地放置第二小芯片20B。附加粘接剂层可以有效地平坦化局部附加粘接剂层14,在污染性颗粒上方形成层或者填充粘接剂层12中粘接剂材料的间隙。
在如图9所示的本发明另一实施方式中,压印器30可以在非粘接小芯片位置24处的粘接剂层12上方向下压,并且将粘着的颗粒50A压成压扁的颗粒50D,该压扁的颗粒50D也可以被压进粘接剂层12中。然后非粘接小芯片位置24就可以接收第二小芯片20。参照图10A,本发明的另一实施方式中,压印器30可以具有压印粘接剂层13,当压印器3与粘接剂层12接触时,驱离的颗粒50B可以粘接到压印粘结层13。可以通过在压印粘接剂层13中使用比在粘接剂层12中使用的粘接剂更强的粘接剂,而将驱离的颗粒优选地粘接到压印器30和压印粘接剂层13。
参照图10B,在本发明另一实施方式中,通过使用压印器30在未对齐的小芯片20A上向下压,将未对齐的小芯片20A粘接到压印器30上的压印器粘接剂层13,以及将压印器30和未对齐的小芯片20A一起移除,就能够将未对齐的小芯片移除。非粘接小芯片位置24于是可以接收第二小芯片20。如下所述以及针对图6和图7所述,可以在放置第二小芯片20之前在基板10上设置附加粘接剂。
根据本发明另一实施方式,可以相结合地使用以上所述的移除颗粒的方法。特别地,在驱离、烧蚀或者抽走污染性颗粒之后沉积附加粘接剂小液滴以形成局部附加粘接剂层14可以是有用的。此外,在粘接剂层12在基板10上不均匀以及在特别的非粘接小芯片位置24不存在粘接剂材料的情况下,附加粘接剂材料的局部添加将允许第二小芯片20被粘接。能够在非粘接小芯片位置24的粘接剂层12上再次沉积蒸发的、烧蚀的有机材料,使得粘接剂层12无效,这也是可能的。使用具有更强粘接剂涂覆层的压印器30能够使得从基板10移除粘接剂层12,这是可能的。此外,附加粘接剂材料的局部添加可以允许第二小芯片20被粘接。
因此,通过一个或者多个所述的方法能够克服现有技术中由于各种颗粒污染或者粘接剂层12的不均匀性引起的小芯片粘接问题,由此提高了采用小芯片的基板的产量。
本发明的方法可以结合成像装置和分析软件的使用而实现,成像装置和分析软件意在探测基板上小芯片的存在、缺少或者对齐。例如,数码相机能够拍摄基板,基于计算机的软件图像处理程序用来探测基板上小芯片的存在、缺少或者对齐。这类分析结果可用于机械地指导操作激光烧蚀装置、微型分配器、微型气体喷射器、抽吸装置以及压印器。
本发明可以用来构造上面形成有像素阵列的显示装置,像素由小芯片内设置的电路驱动,该显示装置例如为有机或者无机发光二极管装置。
压印过程(如本文所描述的那些压印过程)在Matsumara(以上引用的)中进行了描述。
如上所述,一旦用有效的小芯片对基板进行了充分组装,基板和小芯片可以被处理为用形成在基板上的线将小芯片电性互连。然后可以在基板上形成响应于小芯片的有机电致发光结构(如OLED)。这些线用于驱动电路以及操作装置。
根据本发明的各种实施方式,能够以多种方式构造小芯片,例如采用沿着小芯片长度尺寸方向的一行或者两行连接垫。可以由各种材料形成互连总线,以及互连总线采用各种方法用来沉积在装置基板上。例如,互连总线可以是蒸发或溅射的金属,例如铝或者铝合金。另选地,互连总线可以由固化的导电油墨或者金属氧化物制成。一个具有成本优势的实施方式中,互连总线形成为单层。
本发明对采用大装置基板(如玻璃、塑料或者金属薄片)的多像素装置实施方式尤其有用,其中多个小芯片以规则的排列设置在装置基板上。各个小芯片能够根据小芯片内的线路以及响应于控制信号来控制形成在装置基板上的多个像素。能够在平铺的元件上设置单个像素组或者多个像素组,这些像素组能够被组装为形成整个显示器。
根据本发明的实施方式,小芯片在基板上提供了分布的像素控制元件。小芯片与装置基板相比为相对小的集成电路,并且包括形成在独立基板上的电路,该电路包含有电线、连接垫、诸如电阻器或电容器的无源元件或者诸如晶体管或二极管的有源元件。小芯片与装置基板分开制造,并且应用到装置基板。优选地使用硅或绝缘体上硅(SOI)利用制造半导体装置的已知工艺来制造小芯片。然后在将小芯片附接到装置基板之前分离各个小芯片。因此,各个小芯片的结晶基底可以被认为是与装置基板分离的、并且小芯片线路沉积在上面的基板。因此,多个小芯片具有彼此相应的从装置基板分离的多个基板。特别地,独立的基板从形成有像素的基板分离,并且独立的、小芯片基板的总共的面积小于装置基板。小芯片可以具有结晶基板,以提供比例如薄膜非晶硅装置或者薄膜多晶硅薄膜装置中建立的有源元件更高性能的有源元件。小芯片可以优选地具有100微米或者更小的厚度,更优选地具有20微米或者更小的厚度。这利于粘接剂和平坦化材料在小芯片上的形成,其于是可以采用传统的旋涂技术来进行涂敷。根据本发明的一个实施方式,形成在晶体硅基板上的小芯片以几何阵列布置并且使用粘接和平坦化材料粘接到装置基板上。小芯片表面上的连接垫用于将各个小芯片连接到信号线、电源总线以及行或列电极,以驱动像素。小芯片能够控制至少四个像素。
由于小芯片形成在半导体基板内,因此可以使用现代光刻工具形成小芯片的线路。采用这种工具,可以容易地得到0.5微米或者更小的特征尺寸。例如,现在的半导体制造线可以达到90纳米或者45纳米的线宽,并且可以在制造本发明的小芯片时使用。然而,小芯片还需要连接垫,用于在组装到显示器基板上时进行到设置在小芯片上的配线层的电连接。必须根据显示器基板上使用的光刻工具的特征尺寸(比如5微米)以及小芯片连接到配线层的对齐(比如+/-5微米)来确定连接垫的尺寸。因此,连接垫可以例如是15微米宽且垫之间的间隔为5微米。这表明垫一般将明显大于小芯片中形成的晶体管线路。
垫一般可以形成在小芯片上、晶体管上方的金属化层中。理想的是将小芯片制造得具有尽可能小的表面积,以实现低的制造成本。
通过使用有独立基板(如包括晶体硅)的小芯片,提供了具有更高性能的装置,其中,相比于直接形成在基板(如非晶硅或者多晶硅)上的电路,该独立基板具有更高性能的线路。由于晶体硅不仅具有更高的性能,而且具有更小的有源元件(比如晶体管),因此大大减小了线路尺寸。使用微机电(MEMS)结构也可以形成有用的小芯片,例如Yoon、Lee、Yang和Jang在“A novel use of MEMs switches in drivingAMOLED”(Digest of Technical Papers of the Society for Information Display,2008,3.4,p.13)中所描述的。
装置基板可以包括玻璃和配线层,该配线层由蒸发或溅射的金属或金属合金(如铝或银)制成并形成在利用现有技术中已知的光刻技术图案化的平坦化层(如树脂)之上。可以使用在集成电路工业中很好地确立的常规技术来形成小芯片。
本发明具体基于特定的优选实施方式进行了详细的描述,但是应当理解,可以在本发明的精神和保护范围内实现多种变形和修改。
部件列表
10基板
12粘接剂层
13压印粘接剂层
14局部附加粘接剂层
15粘性剂的小液滴
20、20A、20B小芯片
22粘接小芯片位置
24非粘接小芯片位置
30压印器
40微型气体喷射器装置
42微型抽吸装置
44微型分配器
45供给
50颗粒
50A粘接的颗粒
50B驱离的颗粒
50C蒸发的颗粒
50D压扁的颗粒
52蒸汽
60烧蚀装置
62辐射
100提供基板的步骤
110涂覆粘性剂的步骤
120放置第一小芯片的步骤
140局部处理粘接剂层的步骤
150放置和粘接第二小芯片的步骤
170固化粘接剂层
Claims (18)
1.一种在基板上提供小芯片的方法,包括依次提供以下步骤:
(a)提供基板;
(b)在所述基板上将粘接剂涂覆成层;
(c)在分离的小芯片位置将多个第一小芯片放置在所述粘接剂层上,以将第一小芯片粘接至所述粘接剂层,其中,所述多个第一小芯片中的一个或者更多个未粘接至所述粘接剂层,使得第一小芯片在粘接小芯片位置粘接至所述粘接剂层,并且第一小芯片在非粘接小芯片位置处未粘接;
(d)局部处理所述非粘接小芯片位置处的粘接剂层,用于调整所述非粘接位置处的所述粘接剂层以接收第二小芯片;
(e)将第二小芯片放置在经调整的非粘接小芯片位置处的所述粘接剂层上,以将第二小芯片粘接在所述非粘接位置处的粘接剂层;
(f)固化所述粘接剂。
2.如权利要求1所述的方法,其中,在涂覆步骤期间,颗粒污染所述非粘接小芯片位置处的粘接剂层。
3.如权利要求1所述的方法,其中,局部处理粘接剂层的步骤包括采用激光束以照射所述非粘接小芯片位置处的粘接剂层。
4.如权利要求3所述的方法,其中,所述激光束将所述非粘接小芯片位置处的污染粘接剂层的颗粒蒸发。
5.如权利要求1所述的方法,其中,所述局部处理步骤包括在所述非粘接小芯片位置处的粘接剂层上沉积附加粘接剂。
6.如权利要求5所述的方法,其中,所述附加粘接剂将污染所述非粘接小芯片位置处的粘接剂层的颗粒驱离、移到新的位置或者掩埋。
7.如权利要求5所述的方法,其中,所述局部处理步骤包括使具有所述附加粘接剂的所述非粘接小芯片位置处的粘接剂层表面平坦化。
8.如权利要求5所述的方法,其中,使用喷墨装置或微型分配装置以沉积所述附加粘接剂。
9.如权利要求3所述的方法,所述方法包括在所述非粘接小芯片位置处的粘接剂层上局部沉积附加粘接剂。
10.如权利要求3所述的方法,所述方法包括在所述激光束照射之前或之后,使用微型气体喷射器。
11.如权利要求2所述的方法,所述方法包括采用微型气体喷射器将所述颗粒从所述非粘接小芯片位置处驱离或移除。
12.如权利要求2所述的方法,所述方法包括采用微型气体抽吸装置将所述颗粒从所述非粘接小芯片位置处驱离或移除。
13.如权利要求3所述的方法,所述方法包括采用微型气体喷射器或者微型抽吸装置将所述颗粒从所述非粘接小芯片位置处驱离或移除。
14.如权利要求1所述的方法,所述方法包括对非粘接小芯片区域施加压印器。
15.如权利要求14所述的方法,所述方法包括在所述非粘接小芯片位置处的粘接剂层上局部沉积附加粘接剂。
16.如权利要求14所述的方法,其中,在涂覆步骤期间,颗粒污染所述非粘接小芯片位置处的粘接剂层,并且其中对所述非粘接小芯片区域施加压印器迫使所述颗粒至少部分地进入到所述基板上的所述粘接剂层中。
17.如权利要求14所述的方法,其中,在涂覆步骤期间,颗粒污染所述非粘接小芯片位置处的粘接剂层,并且所述方法还包括在所述压印器上提供压印粘接剂层,所述压印器被施加到所述非粘接小芯片区域,使得所述颗粒粘接至所述压印粘接剂层。
18.如权利要求14所述的方法,其中,一个或者更多个小芯片在所述基板上未对齐,并且所述方法还包括在所述压印器上提供压印粘接剂层,所述压印器被施加到所述未对齐的小芯片,以将所述未对齐的小芯片粘接至所述压印粘接剂层。
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