CN102800798B - A kind of LED encapsulation structure and method for packing thereof - Google Patents
A kind of LED encapsulation structure and method for packing thereof Download PDFInfo
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- CN102800798B CN102800798B CN201110330583.0A CN201110330583A CN102800798B CN 102800798 B CN102800798 B CN 102800798B CN 201110330583 A CN201110330583 A CN 201110330583A CN 102800798 B CN102800798 B CN 102800798B
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000005538 encapsulation Methods 0.000 title claims abstract description 25
- 238000012856 packing Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000000605 extraction Methods 0.000 claims abstract description 20
- 238000002161 passivation Methods 0.000 claims description 6
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The present invention is directed to that LED packaging efficiency in prior art is low, heat radiation thermal resistance is big and can not shortcoming compatible with wafer level packaging, provide a kind of LED encapsulation structure and method for packing, can increasing the packaging efficiency of LED, reduction heat radiation thermal resistance also can be mutually compatible with wafer level packaging. LED encapsulation structure provided by the invention includes the LED chip stacked gradually, substrate and heat-radiating substrate, substrate has the silicon through hole running through substrate, the both sides of substrate are respectively provided with the wiring layer with interconnecting silicon through holes, the part below substrate that is positioned at of heat-radiating substrate has the protuberance being connected with substrate, and the size being smaller in size than described substrate of this protuberance, the non-described protuberance part of heat-radiating substrate is provided with extraction circuit, LED chip and substrate are interconnected by upside-down mounting mode, the combination of LED chip and substrate interconnects with drawing circuit also by upside-down mounting mode, and by the silicon through hole in substrate, the signal of LED chip is exported to drawing circuit.
Description
Technical field
The present invention relates to semiconductor applications, particularly relate to a kind of LED encapsulation structure and method for packing thereof.
Background technology
Current typical high-power LED chip is generally adopted the face-down bonding structure shown in Fig. 1 and is packaged, wherein, LED chip 2 is designed to rearwardly luminous, the metal microbonding ball 3 for electrical interconnection is made on the surface of LED chip 2, LED chip 2 then adopts the mode of upside-down mounting and following silicon substrate 4 to be attached, and it is drawn out to periphery pad at the surface of the silicon substrate 4 simple circuit made from the port by microbonding ball 3, then pass through lead key closing process and realize the interconnection of the extraneous power supply with LED chip 2 and other signals. It is heat dissipating layer 10 and metal heat sink 11 in the lower section of silicon substrate 4, for promoting that heat conducts to the back side of LED chip 2. In FIG, label 1 represents mixes fluorescent powder silica gel, and label 2 represents LED chip, label 3 represents microbonding ball, label 4 represents that silicon substrate, label 5 represent contact conductor, and label 6 represents reflector, label 7 represents metallic reflector, label 8 represents that casting glue, label 9 represent external circuits, and label 10 represents heat dissipating layer, label 11 represents metal heat sink layer, and label 12 represents bonded layer.
In the construction shown in fig. 1, silicon substrate 4 is to be electrically connected with extraneous by the mode of wire bonding, and therefore packaging efficiency reduces and can not carry out compatibility with Wafer-Level Packaging Technology.
Summary of the invention
The present invention is directed to LED packaging efficiency in prior art low and can not shortcoming compatible with wafer level packaging, provide a kind of LED encapsulation structure and method for packing, the packaging efficiency of LED can be increased, reduce LED chip heat radiation thermal resistance, and can be mutually compatible with wafer level packaging.
LED encapsulation structure provided by the invention includes the LED chip stacked gradually, substrate and heat-radiating substrate, described substrate has the silicon through hole running through described substrate, the both sides of described substrate are respectively provided with and the wiring layer of described interconnecting silicon through holes, the part below described substrate that is positioned at of described heat-radiating substrate has the protuberance being connected with described substrate, and the size being smaller in size than described substrate of this protuberance, the non-described protuberance part of described heat-radiating substrate is provided with extraction circuit, described LED chip and described substrate are interconnected by upside-down mounting mode, the combination of described LED chip and described substrate is also by upside-down mounting mode and the interconnection of described extraction circuit, and by the silicon through hole in described substrate, the signal of described LED chip is exported to described extraction circuit.
LED encapsulation method provided by the invention comprises the following steps:
Substrate is provided and forms silicon through hole over the substrate;
The side of described substrate is formed wiring layer and by flip chip bonding process, the side forming wiring layer of LED chip with described substrate is interconnected;
The opposite side of described substrate is formed wiring layer;
To be interconnected by the mode of upside-down mounting with described opposite side with the heat-radiating substrate drawing circuit, the part below described substrate that is positioned at of wherein said heat-radiating substrate has the protuberance being connected with described substrate, and the size being smaller in size than described substrate of this protuberance, the non-described protuberance part of described heat-radiating substrate is provided with extraction circuit.
Owing to the LED encapsulation structure according to the present invention and method for packing are to realize LED chip and the interconnection drawn between circuit by possessing the through-silicon via structure of perpendicular interconnection function, so lead key closing process used in the prior art need not be adopted, thus adding packaging efficiency, reduce the heat radiation thermal resistance of LED chip.
Accompanying drawing explanation
Fig. 1 is LED encapsulation structure of the prior art;
Fig. 2 is an exemplary cross sectional view of the LED encapsulation structure according to the present invention;
Fig. 3 is the another exemplary profile of the LED encapsulation structure according to the present invention;
Fig. 4 is the flow chart of the LED encapsulation method according to the present invention;
Fig. 5-Figure 11 is the preparation flow schematic diagram of the LED encapsulation structure according to the present invention.
Detailed description of the invention
LED encapsulation structure according to the present invention and method for packing are described in detail below in conjunction with accompanying drawing.
As shown in Figure 2, LED encapsulation structure according to the present invention includes the LED chip 70 stacked gradually, substrate 10 and heat-radiating substrate 120, described substrate 70 has the silicon through hole 20 running through described substrate 70, the both sides of described substrate 10 are respectively provided with and the wiring layer 60 and 90 of described silicon through hole 20 interconnection, the part below described substrate that is positioned at of described heat-radiating substrate 120 has the protuberance being connected with described substrate 10, and the size being smaller in size than described substrate 10 of this protuberance, the non-described protuberance part of described heat-radiating substrate 120 is provided with extraction circuit 130, described LED chip 70 is interconnected by upside-down mounting mode with described substrate 10, the combination of described LED chip 70 and described substrate 10 interconnects also by upside-down mounting mode and described extraction circuit 130, and by the silicon through hole 20 in described substrate 10, the signal of described LED chip 70 is exported to described extraction circuit 130.
Preferably, there is heat dissipating layer 110 between described protuberance and described substrate 10. This heat dissipating layer 110 is formed by the boundary material of high heat conductance, and when substrate 10 is carried out back bonding with heat-radiating substrate 120, heat dissipating layer forms tight bond between the bottom of substrate 10 and heat-radiating substrate 120. It is the relatively low tack coat of thermal conductivity due to what prior art was added between substrate 10 and heat-radiating substrate 120, so the LED encapsulation structure according to the present invention can reduce thermal resistance, increases heat dispersion further. Although it addition, in fig. 2, wiring layer 90 is arranged between heat dissipating layer 110 and substrate 10, but the invention is not limited in this, it practice, heat dissipating layer 110 can directly contact with substrate 10, wiring layer 90 then can be arranged in the part not contacted with heat dissipating layer 110 of substrate 10.
It addition, according to the needs electrically and thermally designed, the diameter of described silicon through hole 20 is positioned at the scope of 10 microns to 100 microns, and the degree of depth of described silicon through hole 20 is positioned at the scope of 100 microns to 300 microns.And, described silicon through hole 20 is preferably placed near hot zone when described LED chip 70 works, farthest to reduce local temperature when LED chip 70 works, thus farthest improving the heat dispersion of LED chip 70.
Preferably, described heat-radiating substrate 120 can adopt the material of high heat conductance to make, for instance the materials such as Cu, aluminium nitride, aluminium oxide or beryllium oxide.
It addition, for the luminous efficiency increasing LED, as it is shown on figure 3, according to the LED encapsulation structure of the present invention also include being positioned on described extraction circuit 130 around described LED chip 70, the reflector 140 that is covered with reflecting layer 160 on surface. And, in the encapsulating structure shown in Fig. 3, this LED encapsulation structure also has the heat-sink shell 150 that the side without described extraction circuit 130 with described heat-radiating substrate 120 is connected, thus increasing the radiating efficiency of this encapsulating structure further.
Describing the LED encapsulation method according to the present invention below in conjunction with Fig. 4, the method includes:
S21, offer substrate 10 also form silicon through hole 20 on described substrate 10;
S22, the side of described substrate 10 is formed wiring layer and by flip chip bonding process, the side forming wiring layer of LED chip 70 with described substrate 10 is interconnected;
S23, on the opposite side of described substrate 10 formed wiring layer;
S24, will be interconnected by the mode of upside-down mounting with described opposite side with the heat-radiating substrate 120 drawing circuit 130, the part below described substrate 10 that is positioned at of wherein said heat-radiating substrate 120 has the protuberance being connected with described substrate 10, and the size being smaller in size than described substrate 10 of this protuberance, the non-described protuberance part of described heat-radiating substrate 120 is provided with extraction circuit 130.
The flow chart of LED encapsulation method according to the present invention is described in detail below in conjunction with Fig. 5-Figure 11.
As shown in Figure 5, it is provided that substrate 10, silicon through hole 20 is formed and on this substrate 10. Wherein, this substrate 10 can be well known to a person skilled in the art silicon substrate etc. According to the needs electrically and thermally designed, the diameter of this silicon through hole 20 may be located in the scope of 10 microns to 100 microns, and the degree of depth of this silicon through hole 20 may be located in the scope of 100 microns to 300 microns. Furthermore it is possible to adopt deep reaction ion etching (DRIE) technique or other etching technics to form this silicon through hole 20.
Afterwards, as shown in Figure 6, the sidewall of silicon through hole 20 forms insulating barrier 30 and diffusion impervious layer 40. Wherein, the technique such as thermal oxide or chemical vapour deposition (CVD) can be adopted to form insulating barrier 30, and physical vapor deposition (PVD) or the technique such as chemical vapour deposition (CVD) or atomic layer deposition (ALD) can be adopted to form diffusion impervious layer 40, and the material forming diffusion impervious layer 40 can be Ti, Ta, TiN, TaN etc.
Afterwards, as shown in Figure 7, in silicon through hole 20, filler metal material 50 (such as copper, tungsten, polysilicon, conducting polymer, Metal polymer composite etc.), wherein can carry out filler metal material 50 by techniques such as plating, physical vapor deposition, chemical vapour depositions.
Afterwards, as shown in Figure 8, the side of substrate 10 formed wiring layer 60 and by flip chip bonding process, the side forming wiring layer 60 of LED chip 70 with substrate 10 interconnected. Wherein, label 80 in fig. 8 represents metal salient point.
Afterwards, as shown in Figure 9, the opposite side of substrate forms wiring layer 90 and for carrying out the soldered ball 100 of back bonding with heat-radiating substrate, and on wiring layer 90, form passivation layer and deposit a floor height heat-conductivity materials on the passivation layer formed, for instance high heat conductance silver slurry etc.Wherein passivation layer and highly heat-conductive material layer (i.e. heat dissipating layer) whole by reference number 110 being formed on passivation layer represent. When substrate 10 is carried out back bonding with heat-radiating substrate, heat dissipating layer forms tight bond between the bottom of substrate 10 and heat-radiating substrate 120, it is provided that high passage of heat. It is the relatively low tack coat of thermal conductivity due to what prior art was added between substrate 10 and heat-radiating substrate, so the LED encapsulation structure according to the present invention can reduce thermal resistance, increases heat dispersion further.
Afterwards as shown in Figure 10, to be interconnected by the mode of upside-down mounting with substrate 10 with the heat-radiating substrate 120 drawing circuit 130, the part below described substrate 10 that is positioned at of wherein said heat-radiating substrate 120 has the protuberance being connected with described substrate, and the size being smaller in size than described substrate of this protuberance, the non-described protuberance part of described heat-radiating substrate 120 is provided with extraction circuit 130.
Afterwards, as shown in figure 11, drawing, circuit 130 forms reflector 140, and on the opposite side of heat-radiating substrate 120, form heat-sink shell 150. Wherein, the surface of reflector 140 is coated with metallic reflector 160.
It is described in detail above in association with the preferred embodiment of the present invention LED encapsulation structure to the present invention and method for packing, it is to be understood that, when without departing substantially from spirit and scope of the invention, the present invention can be carried out various amendment and deformation, such as according to practical application, some step in preparation flow can be omitted, or the order of some step can be exchanged etc.
Claims (10)
1. a LED encapsulation structure, this encapsulating structure includes the LED chip (70) stacked gradually, substrate (10) and heat-radiating substrate (120), described substrate (10) has the silicon through hole (20) running through described substrate (10), described silicon through hole (20) is positioned near hot zone when described LED chip (70) works, the both sides of described substrate (10) are respectively provided with the wiring layer (60 interconnected with described silicon through hole (20), 90), the part being positioned at described substrate (10) lower section of described heat-radiating substrate (120) has the protuberance being connected with described substrate (10), and the size being smaller in size than described substrate (10) of this protuberance, the non-described protuberance part of described heat-radiating substrate (120) is provided with extraction circuit (130), described LED chip (70) and described substrate (10) are interconnected by upside-down mounting mode, the combination of described LED chip (70) and described substrate (10) is also by upside-down mounting mode and the interconnection of described extraction circuit (130), and by the silicon through hole (20) in described substrate (10), the signal of described LED chip (70) is exported to described extraction circuit (130),
Wherein, described encapsulating structure also include being positioned on described extraction circuit (130) around described LED chip (70), the reflector (140) that is covered with reflecting layer (160) on surface.
2. encapsulating structure according to claim 1, wherein, has heat dissipating layer (110) between described protuberance and described substrate (10).
3. encapsulating structure according to claim 1, wherein, the diameter of described silicon through hole (20) is positioned at the scope of 10 microns to 100 microns, and the degree of depth of described silicon through hole (20) is positioned at the scope of 100 microns to 300 microns.
4. encapsulating structure according to claim 1, wherein, described heat-radiating substrate (120) is Cu substrate, aluminium nitride substrate, aluminum oxide substrate or beryllium oxide substrate.
5. encapsulating structure according to claim 1, wherein, described encapsulating structure also has the heat-sink shell (150) that the side without described extraction circuit (130) with described heat-radiating substrate (120) is connected.
6. a LED encapsulation method, the method includes:
Substrate is provided and forms silicon through hole over the substrate;
Forming wiring layer on the side of described substrate and by flip chip bonding process by the side interconnection forming wiring layer of LED chip and described substrate, wherein, described silicon through hole is positioned near hot zone when described LED chip works;
The opposite side of described substrate is formed wiring layer;
To be interconnected by the mode of upside-down mounting with described opposite side with the heat-radiating substrate drawing circuit, the part below described substrate that is positioned at of wherein said heat-radiating substrate has the protuberance being connected with described substrate, and the size being smaller in size than described substrate of this protuberance, the non-described protuberance part of described heat-radiating substrate is provided with extraction circuit;
Wherein, described method for packing also includes: form the reflector around described LED chip on described extraction circuit.
7. method for packing according to claim 6, wherein, also includes after forming wiring layer on the opposite side of described substrate:
Wiring layer on described opposite side is formed passivation layer;
Described passivation layer is formed heat dissipating layer.
8. method for packing according to claim 6, wherein, the diameter of described silicon through hole is positioned at the scope of 10 microns to 100 microns, and the degree of depth of described silicon through hole is positioned at the scope of 100 microns to 300 microns.
9. method for packing according to claim 6, wherein, described heat-radiating substrate is Cu substrate, aluminium nitride substrate, aluminum oxide substrate or beryllium oxide substrate.
10. method for packing according to claim 6, wherein, described method for packing also includes: with the side without described extraction circuit of described heat-radiating substrate on formed heat-sink shell.
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| CN201110330583.0A CN102800798B (en) | 2011-10-26 | 2011-10-26 | A kind of LED encapsulation structure and method for packing thereof |
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| CN201110330583.0A CN102800798B (en) | 2011-10-26 | 2011-10-26 | A kind of LED encapsulation structure and method for packing thereof |
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| CN102800798B true CN102800798B (en) | 2016-06-08 |
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| CN103077932B (en) * | 2013-02-05 | 2015-10-14 | 华进半导体封装先导技术研发中心有限公司 | The interconnection structure of high aspect ratio vias and manufacture method |
| CN110516382B (en) * | 2019-08-30 | 2022-08-12 | 贵州大学 | Thermal analysis method of three-dimensional integrated system based on silicon through hole |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1897315A (en) * | 2005-07-14 | 2007-01-17 | 桦晶科技股份有限公司 | Light-emitting diodes (LED) packing structure |
| CN102194972A (en) * | 2010-03-02 | 2011-09-21 | 台湾积体电路制造股份有限公司 | Light-emitting device (LED) package component |
| CN102194971A (en) * | 2010-03-02 | 2011-09-21 | 台湾积体电路制造股份有限公司 | Light-emitting device (LED) package structure and method for manufacturing the same |
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| KR100867970B1 (en) * | 2004-10-04 | 2008-11-11 | 가부시끼가이샤 도시바 | Light emitting device, lighting equipment, or liquid crystal display device using such light emitting device |
| CN102054931A (en) * | 2009-10-30 | 2011-05-11 | 福华电子股份有限公司 | Led packaging structure and preparation method thereof |
| CN201904369U (en) * | 2010-07-30 | 2011-07-20 | 晶科电子（广州）有限公司 | LED (light emitting diode) surface-mounting package structure based on silicon substrate |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1897315A (en) * | 2005-07-14 | 2007-01-17 | 桦晶科技股份有限公司 | Light-emitting diodes (LED) packing structure |
| CN102194972A (en) * | 2010-03-02 | 2011-09-21 | 台湾积体电路制造股份有限公司 | Light-emitting device (LED) package component |
| CN102194971A (en) * | 2010-03-02 | 2011-09-21 | 台湾积体电路制造股份有限公司 | Light-emitting device (LED) package structure and method for manufacturing the same |
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