CN102800711A - Silicon-based thin film type solar battery - Google Patents
Silicon-based thin film type solar battery Download PDFInfo
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- CN102800711A CN102800711A CN2012102188590A CN201210218859A CN102800711A CN 102800711 A CN102800711 A CN 102800711A CN 2012102188590 A CN2012102188590 A CN 2012102188590A CN 201210218859 A CN201210218859 A CN 201210218859A CN 102800711 A CN102800711 A CN 102800711A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a silicon-based thin film type solar battery. The problems of the silicon-based thin film type solar battery in the prior art has the defects of complex structure, and complex preparation processes, and the photoelectric conversion efficiency is not obviously improved. The silicon-based thin film type solar battery provided by the invention consists of a transparent substrate, a TCO (Transparent Conductive Oxide) thin film, a silica antireflection film, a silicon-based thin film and a back electrode, wherein the refractive index of the silica antireflection film is 2.0-3.0, and the thickness of the silica antireflection film is 30-100 nm; and the silica antireflection film is in a P type or an N type. The silicon-based thin film type solar battery provided by the invention has the advantages of simple structure and fewer preparation processes; and the photoelectric conversion efficiency can be improved by 4-6%, and the effect is obviously improved.
Description
Technical field
The present invention relates to a kind of thin-film solar cells, especially relate to a kind of silicon-based film solar cells.
Background technology
Being on the rise of energy crisis and environmental pollution greatly promoted developing rapidly of photovoltaic industry.Captured by crystal silicon solar energy battery above 90% solar-energy photo-voltaic cell market at present, all the other are hull cell and a small amount of efficient GaAs battery.
The conversion efficiency of crystal silicon solar energy battery is high; But its complicated process of preparation; Preparation cost is high, and the raw-material price of crystalline silicon is also high, and compares with crystal silicon solar energy battery; Thin-film solar cells has the very big potentiality that reduce cost, and its total low-cost advantage is economized material, low-power consumption, is convenient to large tracts of land serialization production.In thin-film solar cells, silicon-based film solar cells has more special advantages: 1) abundant raw materials, and nontoxic pollution-free; 2) can use the cheap transparent material of large tracts of land, like glass etc. as substrate; 3) energy consumption is low, and raw materials consumption is few; 4) preparation technology is simple, ripe, thus silicon-based film solar cells become research maximum, with fastest developing speed, occupy the maximum hull cell of the market share.
But the photoelectric conversion efficiency of silicon-based film solar cells is on the low side at present, has therefore limited its application to a certain extent.For silicon-based film solar cells, improve it and will improve the current density of battery the absorption of light, can produce directly influence to battery efficiency, therefore how improving silicon-based film solar cells is the subject matter that is faced at present to the absorption of light.
Chinese patent Granted publication number: CN201562684U; Granted publication day: 2010.08.25; A kind of silicon-based film solar cells is disclosed; Comprise glass substrate, the preceding electrode of electrically conducting transparent, back electrode and protection backboard, before said electrically conducting transparent, comprise the amorphous silicon n layer of boron doped amorphous silicon p layer, intrinsic i layer and phosphorus doping between electrode and the back electrode successively, have the silica-base film resilient coating between said intrinsic i layer and the said amorphous silicon n layer.Its weak point is that the amorphous silicon P layer of this silicon-based film solar cells has reflected more light, reduced the absorptivity of intrinsic i layer to light, so the photoelectric conversion efficiency of battery is on the low side.
In addition; One Chinese patent application publication No.: CN102270670A; Open day of application: 2011-12-07; Disclose a kind of silicon-based film solar cells, mixed the Si that adding between tin ash (FTO) thin layer and the transparent glass substrate of fluorine has matte with the zinc oxide films rete (BZO) of zinc oxide (AZO) film of mixing aluminium reflection back pole plate and boron-doping as pair back electrode plate structures and at preceding electrode
3N
4Antireflection layer.This silicon-based film solar cells through glass substrate/tin dioxide thin film at the interface (being glass substrate and TCO film interface) increase Si
3N
4Antireflection layer; And improve battery conversion efficiency as pair back electrode plates with the zinc oxide films rete (BZO) of zinc oxide (AZO) film of mixing aluminium reflection back pole plate and boron-doping, though can reduce the reflection of light, the raising conversion efficiency; But conversion efficiency has only improved 1 ~ 3%; Raising is also not obvious, and this silicon-based film solar cells structure is comparatively complicated, causes preparation section also comparatively numerous and diverse.
Summary of the invention
The present invention is in order to solve the silicon-based film solar cells complex structure of prior art; Preparation section is numerous and diverse, and photoelectric conversion efficiency improves unconspicuous problem, provides a kind of photoelectric conversion efficiency to improve significantly; Silicon-based film solar cells simple in structure, that preparation section is few.
To achieve these goals, the present invention adopts following technical scheme:
A kind of silicon-based film solar cells is made up of transparency carrier, TCO film, silica antireflective film, silica-base film and back electrode from top to bottom successively.The present invention is made up of transparency carrier, TCO film, silica antireflective film, silica-base film and back electrode from top to bottom successively; Simple in structure; The present invention is provided with one deck silica antireflective film on TCO film/silica-base film interface, thereby the photoelectric conversion efficiency of its anti-reflection effect and battery is improved greatly, and the present invention selects for use the silica antireflective film as antireflective film; At first; Silica layer can reduce the reflection of light at the TCO/ silicon interface as antireflective film, when improving silica-base film to the absorption of light, thereby improves the electric current of solar cell; Secondly; The silica layer material can passivation the surface topography of TCO film, reduce the defective of follow-up silica-base film, suppress the defective and the electric leakage of the silicon materials that matte TCO causes; Improve the open circuit voltage and the fill factor, curve factor of solar cell, reach the purpose that improves the thin film solar cell transformation efficiency; Once more; The introducing of silica material also helps to improve the low light level characteristic of solar cell, the power generation characteristics of solar cell is had tangible castering action, in addition; The silica antireflective film has lower K value (absorbance); Can increase the transmitance of light, one deck silica antireflective film is set on TCO film/silica-base film interface, can significantly improve the photoelectric conversion efficiency that makes battery to reduce the reflection loss of light at this interface.
As preferably, described silica antireflective film refractive index is 2.0 ~ 3.0, and thickness is 30 ~ 100nm.The silica antireflective film just can reach anti-reflection effect preferably in 2.0 ~ 3.0 refractive index under the thickness of 30 ~ 100nm, and it is the most remarkable to improve effect for the conversion efficiency of battery, and the silica antireflective film is with SiH
4, CO
2And H
2Be reacting gas, in Oerlikon KAI1200 system, adopt the PECVD method on the TCO film, to deposit and form that the sedimentary condition of PECVD method is: radio-frequency power 200 ~ 4000W, 150 ~ 210 ℃ of underlayer temperatures, deposition pressure 0.3 ~ 2.5mbar, SiH
4Flow 280 ~ 290sccm, CO
2Flow 490 ~ 600sccm, H
2Flow 520 ~ 550sccm, sedimentation time 250 ~ 270s is through the sedimentary condition of control PECVD method; Making the refractive index that deposits the silica antireflective film that obtains is 2.0 ~ 3.0, thickness 30 ~ 100nm, thereby the anti-reflection effect of assurance silica antireflective film; Simultaneously, the silica antireflective film adopts the pecvd process deposition to form, fully the depositing operation of compatible follow-up silica-base film; Thereby guarantee the continuity of manufacture of solar cells and the stability of technology, this application for industrialization is significant.
As preferably, described silica antireflective film is P type or N type.The silica antireflective film is P type or N type, can improve conductivity, when adopting the PECVD method on the TCO film, to deposit the silica antireflective film, with B
2H
6, TMB (trimethyl borine) or PH
3Be impurity gas, the silica antireflective film mixed just to make the silica antireflective film be P type or N type, wherein, with B
2H
6Or TMB (trimethyl borine) is the P type as the impurity gas silica antireflective film that obtains that mixes, with PH
3As the impurity gas silica antireflective film that obtains that mixes is the N type, B
2H
6, TMB or PH
3Flow is 120 ~ 240sccm, guaranteeing its doping content, thereby guarantees conductivity.
As preferably, described transparency carrier is a glass substrate.Glass substrate is prone to obtain, and price is low.
As preferably, described TCO film is AZO film, ito thin film, FTO film or BZO film.The TCO film; It is transparent conductive oxide film; The TCO film can be in this area to be used always as preceding electrode among the present invention AZO film, BZO film or FTO film etc., AZO film, ito thin film, FTO film or BZO thin film preparation process are ripe, and cost is low; Light transmission and good conductivity, therefore preferred AZO film, ito thin film, FTO film or BZO film.
As preferably, described silica-base film is the unijunction structural membrane or ties the laminated construction film more.The PIN knot of becoming described here, the unijunction structure is single PIN knot, ties lamination more and is a plurality of PIN knots and stacks gradually, and such as binode, three knots etc., can select the film of different structure according to demand.
As preferably; Described unijunction structural membrane is the a-Si:H film, and described many knot laminated construction films are a-Si:H/a-Si:H film, a-Si:H/a-SiGe:H film, a-Si:H/ μ c-Si:H film, a-Si:H/ μ c-Si:H/ μ c-Si:H film, a-S:Hi/a-Si:H/ μ c-Si:H film or a-Si:H/ a-SiGe:H/ μ c-Si:H film.Wherein, A-Si:H/a-Si:H film, a-Si:H/a-SiGe:H film and a-Si:H/ μ c-Si:H film are the binode laminate film; A-Si:H/ μ c-Si:H/ μ c-Si:H film, a-S:Hi/a-Si:H/ μ c-Si:H film and a-Si:H/ a-SiGe:H/ μ c-Si:H film are three knot laminate films; Above-mentioned each structure silicon-based film has all been realized industrialization, and technology of preparing is comparatively ripe.
As preferably, described back electrode is AZO/Ag film or AZO/Al film.The AZO film is high temperature resistant, and is stable in hydrogen atmosphere, is convenient to the battery post-processed; Before Ag or Al film, plate one deck AZO film, the AZO film plays the effect that the barrier metal electrode poisons silica-base film on the one hand, improves interface and battery performance; The AZO film helps metal back electrode minimizing light absorption on the other hand, strengthens reflex, improves the absorptivity of silica-base film to light; Increase short circuit current, thereby further improve battery conversion efficiency.
Therefore, the present invention has following beneficial effect:
(1) photoelectric conversion efficiency improves significantly;
(2) simple in structure, preparation section is few.
Description of drawings
Fig. 1 is the structural representation of a kind of silicon-based film solar cells among the embodiment 1.
Fig. 2 is light TCO film/silica-base film interface and the comparison diagram of the reflectivity at TCO film/silica-base film interface in Comparative Examples 1 in embodiment 1 respectively.
Among the figure: glass substrate 1, TCO film 2, silica antireflective film 3, silica-base film 4, back electrode 5.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is done further description.
Embodiment 1
Among the embodiment as shown in Figure 1, a kind of silicon-based film solar cells is made up of transparency carrier 1, TCO film 2, silica antireflective film 3, silica-base film 4 and back electrode 5 from top to bottom successively; Wherein, transparency carrier 1 is a glass substrate, and TCO film 2 is the AZO film; Back electrode 5 is AZO/Al film, and silica-base film 4 is an a-Si:H film 4, and silica antireflective film 3 is the P type; Thickness is 30nm, and refractive index is 2.0.
Implementation method is: glass substrate cleaning, drying → magnetron sputtering method deposition AZO film → PECVD method deposition silica antireflective film → PECVD method deposition a-Si:H film → magnetron sputtering method deposition AZO film → vacuum vapour deposition evaporating Al film; Above-mentioned technology is and well known to a person skilled in the art prior art, thus do not give unnecessary details at this, wherein; Adopt the process conditions of PECVD method deposition silica antireflective film to be: radio-frequency power 200W; 200 ℃ of underlayer temperatures, deposition pressure 0.3mbar, SiH
4Flow 280sccm, CO
2Flow 490sccm, H
2Flow 520sccm, B
2H
6Flow 120sccm, sedimentation time 250s.
Comparative Examples 1
The implementation process of Comparative Examples 1 and embodiment 1 are identical, and difference is, does not adopt PECVD method deposition silica antireflective film.
Adopt measuring reflectance appearance the AZO film/silica-base film interface of measuring light in embodiment 1 and the reflectivity at the AZO film/silica-base film interface in the Comparative Examples 1 respectively; The reflectivity comparison diagram that obtains is as shown in Figure 2; Curve a is light does not deposit the AZO film/silica-base film interface of silica antireflective film in Comparative Examples 1 a reflectivity, and curve b is light deposits the AZO film/silica-base film interface of silica antireflective film in embodiment 1 a reflectivity among the figure.
Can obviously find out from Fig. 2; Among the embodiment 1 between AZO film/silica-base film interface deposition added one deck P type, thickness is 30nm, refractive index is behind 2.0 the silica anti-reflection layer; Light all is starkly lower than the reflectivity at the AZO film/silica-base film interface that does not deposit the silica antireflective film in the Comparative Examples at the reflectivity of long wave and shortwave direction; Especially reflection of light rate long wave direction (> 700nm), the reflectivity in the luminance factor Comparative Examples 1 among the embodiment 1 is low by 4 ~ 5%, explains that this part light is absorbed by battery; Directly make the photoelectric conversion efficiency of battery improve 4 ~ 6%, it is very obvious to improve effect.
The structure of the silicon-based film solar cells among the structure of the silicon-based film solar cells of present embodiment and the embodiment 1 is identical; So do not give unnecessary details; Difference is that the TCO film in the present embodiment is the BZO film, and silica-base film is the a-Si:H/a-SiGe:H film; Silica antireflective film thickness is 100nm, and refractive index is 3.0.
The implementation method of present embodiment is: glass substrate cleaning, drying → magnetron sputtering method deposition BZO film → PECVD method deposition silica antireflective film → PECVD method deposition a-Si:H/a-SiGe:H film → magnetron sputtering method deposition AZO film → vacuum vapour deposition evaporating Al film; Above-mentioned technology is and well known to a person skilled in the art prior art; So do not give unnecessary details at this; Wherein, adopt the process conditions of PECVD method deposition silica antireflective film to be: radio-frequency power 4000W, 210 ℃ of underlayer temperatures; Deposition pressure 2.5mbar, SiH
4Flow 290sccm, CO
2Flow 600sccm, H
2Flow 550sccm, TMB flow 240sccm, sedimentation time 270s.
Comparative Examples 2
The implementation process of Comparative Examples 2 and embodiment 2 are identical, and difference is, does not adopt PECVD method deposition silica antireflective film.
Adopt measuring reflectance appearance the BZO film/silica-base film interface of measuring light in embodiment 2 and the reflectivity at the BZO film/silica-base film interface in the Comparative Examples 2 respectively; Light is similar with comparison diagram and Fig. 2 of the reflectivity at the BZO film/silica-base film interface that does not deposit the silica anti-reflection layer at the reflectivity at the BZO film/silica-base film interface that deposits the silica antireflective film, so do not enumerate.
Long wave direction (> 700nm among the embodiment 2) the reflection of light rate is lower by 4 ~ 6% than the reflectivity in the Comparative Examples 2, explains that this part light is absorbed by battery, directly makes the photoelectric conversion efficiency of battery improve 4 ~ 6%, and it is very obvious to improve effect.
The structure of the silicon-based film solar cells among the structure of the silicon-based film solar cells of present embodiment and the embodiment 1 is identical, so do not give unnecessary details, difference is; TCO film in the present embodiment is ITO; Silica-base film is an a-Si:H/ a-SiGe:H/ μ c-Si:H film, and back electrode is the AZO/Ag film, and the silica antireflective film is the N type; Thickness is 50nm, and refractive index is 2.6.
The implementation method of present embodiment is: glass substrate cleaning, drying → magnetron sputtering method deposition ito thin film → PECVD method deposition silica antireflective film → PECVD method deposition a-Si:H/ a-SiGe:H/ μ c-Si:H film → magnetron sputtering method deposition AZO film → vacuum vapour deposition vapor deposition Ag film; Above-mentioned technology is and well known to a person skilled in the art prior art; So do not give unnecessary details at this; Wherein, adopt the process conditions of PECVD method deposition silica antireflective film to be: radio-frequency power 1400W, 190 ℃ of underlayer temperatures; Deposition pressure 1.6mbar, SiH
4Flow 285sccm, CO
2Flow 500sccm, H
2Flow 540sccm, PH
3Flow 200sccm sedimentation time 260s.
Comparative Examples 3
The implementation process of Comparative Examples 3 and embodiment 3 are identical, and difference is, does not adopt PECVD method deposition silica antireflective film.
Adopt measuring reflectance the appearance ito thin film/silica-base film interface of measuring light in embodiment 3 and the reflectivity at the ito thin film/silica-base film interface in the Comparative Examples 3 respectively; Light is similar with comparison diagram and Fig. 2 of the reflectivity at the ito thin film/silica-base film interface that does not deposit the silica anti-reflection layer at the reflectivity that deposits the ito thin film of silica antireflective film/silica-base film interface, so do not enumerate.
Long wave direction (> 700nm among the embodiment 3) the reflection of light rate is lower by 4 ~ 6% than the reflectivity in the Comparative Examples 3, explains that this part light is absorbed by battery, directly makes the photoelectric conversion efficiency of battery improve 4 ~ 6%, and it is very obvious to improve effect.
Above-described embodiment is the preferable scheme of the present invention, is not the present invention is done any pro forma restriction, under the prerequisite that does not exceed the technical scheme that claim puts down in writing, also has other variant and remodeling.
Claims (8)
1. a silicon-based film solar cells is characterized in that, is made up of transparency carrier, TCO film, silica antireflective film, silica-base film and back electrode successively from top to bottom.
2. a kind of silicon-based film solar cells according to claim 1 is characterized in that, described silica antireflective film refractive index is 2.0 ~ 3.0, and thickness is 30 ~ 100nm.
3. a kind of silicon-based film solar cells according to claim 1 and 2 is characterized in that, described silica antireflective film is P type or N type.
4. a kind of silicon-based film solar cells according to claim 1 is characterized in that, described transparency carrier is a glass substrate.
5. a kind of silicon-based film solar cells according to claim 1 is characterized in that, described TCO film is AZO film, ito thin film, FTO film or BZO film.
6. a kind of silicon-based film solar cells according to claim 1 is characterized in that, described silica-base film is the unijunction structural membrane or ties the laminated construction film more.
7. a kind of silicon-based film solar cells according to claim 6; It is characterized in that; Described unijunction structural membrane is the a-Si:H film, and described many knot laminated construction films are a-Si:H/a-Si:H film, a-Si:H/a-SiGe:H film, a-Si:H/ μ c-Si:H film, a-Si:H/ μ c-Si:H/ μ c-Si:H film, a-S:Hi/a-Si:H/ μ c-Si:H film or a-Si:H/ a-SiGe:H/ μ c-Si:H film.
8. a kind of silicon-based film solar cells according to claim 1 is characterized in that, described back electrode is AZO/Ag film or AZO/Al film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105679844A (en) * | 2016-03-15 | 2016-06-15 | 江苏新源太阳能科技有限公司 | Antireflection layer and method for improving color aberration of solar cell assembly by antireflection layer |
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| JP2005244073A (en) * | 2004-02-27 | 2005-09-08 | National Institute Of Advanced Industrial & Technology | Solar cell and method for manufacturing the same |
| CN101246918A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Anti-reflection membrane of amorphous silicon photovoltaic device |
| CN102104085A (en) * | 2010-12-14 | 2011-06-22 | 天津市津能电池科技有限公司 | Large-area silicon-based thin film solar battery with anti-reflecting film and manufacturing method thereof |
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Patent Citations (3)
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| JP2005244073A (en) * | 2004-02-27 | 2005-09-08 | National Institute Of Advanced Industrial & Technology | Solar cell and method for manufacturing the same |
| CN101246918A (en) * | 2007-02-14 | 2008-08-20 | 北京行者多媒体科技有限公司 | Anti-reflection membrane of amorphous silicon photovoltaic device |
| CN102104085A (en) * | 2010-12-14 | 2011-06-22 | 天津市津能电池科技有限公司 | Large-area silicon-based thin film solar battery with anti-reflecting film and manufacturing method thereof |
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| CN105679844A (en) * | 2016-03-15 | 2016-06-15 | 江苏新源太阳能科技有限公司 | Antireflection layer and method for improving color aberration of solar cell assembly by antireflection layer |
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Application publication date: 20121128 |