CN102797012A - Etching equipment and upper part electrode thereof - Google Patents
Etching equipment and upper part electrode thereof Download PDFInfo
- Publication number
- CN102797012A CN102797012A CN2012102656425A CN201210265642A CN102797012A CN 102797012 A CN102797012 A CN 102797012A CN 2012102656425 A CN2012102656425 A CN 2012102656425A CN 201210265642 A CN201210265642 A CN 201210265642A CN 102797012 A CN102797012 A CN 102797012A
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- electrode
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- upper electrode
- etching apparatus
- etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses etching equipment and an upper part electrode of the etching equipment, and relates to the field of mechanical structures. The upper part electrode has a plurality of electrode holes, and at least consists of a first area and a second area; and the distribution density of the electrode holes arranged at the first area is different from that of the electrode holes arranged at the second area. According to the different etched membrane layer materials, the arrangement areas of the electrode holes arranged on the upper part electrode and the gaps among the electrode holes arranged on the upper part electrode can be changed, so that the aim of improving the uniformity of etching rate can be achieved.
Description
Technical field
The present invention relates to mechanical structure field, be specifically related to a kind of etching apparatus and upper electrode thereof.
Background technology
Dry etching is to react a kind of micro-processing method of peeling off, removing the rete material through plasma body and the rete material that not masked layer covers.
What dry etching equipment under the prior art adopted is upper electrode as shown in Figure 1, and the electrode hole very rule that distributes is covered with whole upper electrode.The distribution mode in kind electrode hole does not combine with the material of institute etched membrane layer and carries out distributed and arranged; And inapplicable and described etched membrane layer material; Be easy to cause the etching rate homogeneity after the etching excessive; Influence the effect of etching, the etching rate homogeneity of a wherein whole glass substrate=etching rate peak-etching rate minimum value/2 (etching rate MV).
Summary of the invention
The embodiment of the invention provides a kind of etching apparatus and upper electrode thereof, in order to improve the etching rate homogeneity of rete after the etching.
The main technical schemes of the embodiment of the invention is:
A kind of upper electrode of etching apparatus; Said upper electrode is provided with a plurality of electrode holes; Said upper electrode is made up of first area and second area at least, and said electrode hole is different in the distribution density of said second area with said electrode hole in the distribution density of said first area.
A kind of etching apparatus comprises above-mentioned upper electrode.
The embodiment of the invention, different according to institute's etched membrane layer material, change the setting area of the electrode hole on the upper electrode and the interval between electrode hole, thereby realized improving the purpose of etching homogeneity.
Description of drawings
The upper electrode structural representation of a kind of prior art that Fig. 1 provides for the embodiment of the invention;
Etching rate distribution schematic diagram after a kind of upper electrode etching that adopts prior art that Fig. 2 provides for the embodiment of the invention;
The upper electrode structural representation a kind of of the present invention that Fig. 3 provides for the embodiment of the invention;
The upper electrode structural representation a kind of of the present invention that Fig. 4 provides for the embodiment of the invention;
The upper electrode structural representation a kind of of the present invention that Fig. 5 provides for the embodiment of the invention;
The upper electrode structural representation a kind of of the present invention that Fig. 6 provides for the embodiment of the invention;
The electrode hole distribution schematic diagram of a kind of upper electrode of the present invention that Fig. 7 provides for the embodiment of the invention.
Embodiment
The embodiment of the invention provides a kind of etching apparatus and upper electrode thereof, in order to improve the etching rate homogeneity of rete after the etching.
The upper electrode of a kind of etching apparatus that the embodiment of the invention provides; Said upper electrode is provided with a plurality of electrode holes; Through said electrode hole in order to carry the required gas of etching; Said upper electrode is made up of first area and second area at least, and said electrode hole is different in the distribution density of said second area with said electrode hole in the distribution density of said first area.In real work, need be according to the different rete material decision first area of etching and the distributed areas and its top electrode pore distribution density of second area, in some cases, the electrode hole distribution density of said first area and said second area can be zero.Can repeatedly adjust through TE, purpose is through setting area that changes the electrode hole on the upper electrode and the interval between electrode hole, changes in the etching process density of used etching gas, and then reduction rate etching homogeneity.
Said a plurality of electrode hole preferably is matrix distribution in said first area, is convenient to processing.
Several specific embodiments of the present invention below are provided, technical scheme of the present invention are described:
Embodiment one:
The etched membrane layer material of choosing in the present embodiment is that SiNx (silicon nitride), the gas of use are O2 (oxygen); SF6 (sulfur hexafluoride), applicant at first adopt the upper electrode that electrode hole and electrode hole spacing equate that is covered with under the prior art that SiNx is carried out etching, and the etching rate homogeneity that draws is about 36%; As shown in Figure 2, the excessive not good problem of etching rate homogeneity that caused of part place etching rate of light color among the figure is according to the etching rate distribution plan of Fig. 2; The applicant adopts upper electrode shown in Figure 3 among the present invention with the upper electrode of correspondence, and the zone that etching rate is too high is not provided with electrode hole, to reduce this part regional etching rate; After experiment; The etching rate homogeneity that draws is approximately 24%, and the etching rate homogeneity has reduced about half, has reached the purpose of improving the etching rate homogeneity.
The shape of said upper electrode and size can be provided with as required, are generally rectangle, and the shape of said first area and second area and size also can be provided with as required, and be as shown in Figure 3, can be irregular figure.In order to implement conveniently to be traditionally arranged to be square or rectangular, said upper electrode generally can adopt the rectangle upper electrode that is of a size of 1007*1087.5mm,
Embodiment when below providing several kinds of upper electrodes of the present invention to take to be of a size of 1007mm*1087.5mm:
As shown in Figure 4, said first area is arranged on said upper electrode middle part, and said second area is located at the periphery of said first area for the electrode hole distribution density is zero white space.Be 4 white spaces among this Fig. 4, be arranged on the position, four corners of said upper electrode, the length of side of said white space can be a=b=250mm ~ 300mm.
Further, under above-mentioned situation, as required; The middle part of said upper electrode also can be provided with said white space except the first area is set, the present invention provides a kind of embodiment; As shown in Figure 5, be provided with white space in the centre of said first area.Wherein, the length of side of white space described in this Fig. 5 can be set to c=250mm ~ 300mm, d=400mm ~ 600mm.
As shown in Figure 6, in some cases, said first area is located at the centre of said upper electrode, and other zone all is that white space just can reach the good treatment result.In this Fig. 6, the length of side of said first area can be e=f=400mm ~ 500mm.
In order fully to support the present invention program, the applicant also tests following rete material:
Embodiment two, and the etched membrane layer material of choosing is PR glue (photoresist material), using gas: O2, and SF6 adopts like the described upper electrode of Fig. 4, and the etching rate homogeneity reduces about 5%.
Embodiment three, and the etched membrane layer material of choosing is Mo (molybdenum), using gas: O2, and SF6, Cl2 (chlorine) adopts like the described upper electrode of Fig. 5, and the etching rate homogeneity reduces about 15%.
Embodiment four, and the etched membrane layer material of choosing is Si (silicon), using gas Cl2, and SF6 adopts like the described upper electrode of Fig. 6, and the etching rate homogeneity reduces about 5%.
More preferably, for the ease of enforcement, said some electrode holes are matrix distribution in said first area.
More preferably, for the ease of being provided with, said electrode hole is can said first area distribution density even, and the distance between the adjacent electrode hole equates.For example pitch of holes can be 5mm ~ 20mm.
Because the spacing that changes the adjacent electrode hole helps the reduction of etching rate homogeneity, said electrode hole can be uneven in said second area distribution density, and the line-spacing between every adjacent two column electrode holes does not wait, the row distance between every adjacent two row electrode holes does not wait.As required, as shown in Figure 7, also can take said first area to be located at the middle part of said upper electrode; Said second area is located at the periphery of said first area, and for example the pitch of holes of first area is fixed, and can be 5mm ~ 20mm; The pitch of holes of second area enlarges gradually, can be 10mm ~ 40mm.
Said electrode hole can be circular port or square opening, also can be set to the electrode hole of other shape as required, and when selecting said circular port for use, the diameter of said circular port can be 0.3mm ~ 1mm.
The present invention also provides a kind of etching apparatus, comprises the described upper electrode of above-mentioned arbitrary technical scheme, can obviously improve the etching rate homogeneity of rete material.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. the upper electrode of an etching apparatus; Said upper electrode is provided with a plurality of electrode holes; It is characterized in that; Said upper electrode is made up of first area and second area at least, and said electrode hole is different in the distribution density of said second area with said electrode hole in the distribution density of said first area.
2. the upper electrode of a kind of etching apparatus as claimed in claim 1 is characterized in that, said a plurality of electrode holes are matrix distribution in said first area.
3. the upper electrode of a kind of etching apparatus as claimed in claim 1 is characterized in that, distribution density is even in said first area for said electrode hole, and the distance between the adjacent electrode hole equates.
4. the upper electrode of a kind of etching apparatus as claimed in claim 1 is characterized in that, said electrode hole is uneven in said second area distribution density, and the line-spacing between every adjacent two column electrode holes does not wait, whenever the distance of the row between the adjacent two row electrode holes does not wait.
5. like the upper electrode of the arbitrary described a kind of etching apparatus of claim 1-4, it is characterized in that said first area is located at the middle part of said upper electrode, said second area is located at the periphery of said first area.
6. the upper electrode of a kind of etching apparatus as claimed in claim 5 is characterized in that, said second area is zero white space for the electrode hole distribution density.
7. the upper electrode of a kind of etching apparatus as claimed in claim 5 is characterized in that, the middle part of said upper electrode also is provided with said white space.
8. like the upper electrode of the arbitrary described a kind of etching apparatus of claim 1-4, it is characterized in that said upper electrode integral body is rectangle.
9. like the upper electrode of the arbitrary described a kind of etching apparatus of claim 1-4, it is characterized in that said electrode hole is circular port or square opening.
10. an etching apparatus is characterized in that, comprises the described upper electrode of arbitrary claim among the said claim 1-9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102656425A CN102797012A (en) | 2012-07-27 | 2012-07-27 | Etching equipment and upper part electrode thereof |
| PCT/CN2012/083456 WO2014015567A1 (en) | 2012-07-27 | 2012-10-24 | Etching device and upper electrode thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102656425A CN102797012A (en) | 2012-07-27 | 2012-07-27 | Etching equipment and upper part electrode thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102797012A true CN102797012A (en) | 2012-11-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012102656425A Pending CN102797012A (en) | 2012-07-27 | 2012-07-27 | Etching equipment and upper part electrode thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102797012A (en) |
| WO (1) | WO2014015567A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103745904A (en) * | 2013-12-31 | 2014-04-23 | 深圳市华星光电技术有限公司 | Dry etcher and etching method for same |
| CN109360779A (en) * | 2018-11-13 | 2019-02-19 | 深圳市华星光电半导体显示技术有限公司 | The top electrode and its manufacturing method of dry etching equipment |
| CN111599719A (en) * | 2020-05-20 | 2020-08-28 | Tcl华星光电技术有限公司 | Etching gas introducing mechanism and etching machine |
| CN111893537A (en) * | 2020-07-16 | 2020-11-06 | 合肥微睿光电科技有限公司 | Method for improving uniformity of anode oxide film of large-size upper electrode plate by changing mounting and hanging mode |
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| CN1540033A (en) * | 2003-04-14 | 2004-10-27 | 三星电子株式会社 | Chemical vapor deposition installation with integrated diffuser frame |
| US20040261712A1 (en) * | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
| CN101030538A (en) * | 2006-02-27 | 2007-09-05 | 东京毅力科创株式会社 | Plasma etching apparatus and method |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
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| JPH11149999A (en) * | 1997-11-18 | 1999-06-02 | Tokyo Electron Ltd | Plasma treating device |
| CN100355325C (en) * | 2005-09-30 | 2007-12-12 | 友达光电股份有限公司 | Gas distribution electrode for plasma etching machine |
| CN201181693Y (en) * | 2008-04-17 | 2009-01-14 | 上海华虹Nec电子有限公司 | Upper electrode of semiconductor etching equipment |
| JP5455462B2 (en) * | 2009-06-23 | 2014-03-26 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
| JP5762798B2 (en) * | 2011-03-31 | 2015-08-12 | 東京エレクトロン株式会社 | Ceiling electrode plate and substrate processing placement |
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2012
- 2012-07-27 CN CN2012102656425A patent/CN102797012A/en active Pending
- 2012-10-24 WO PCT/CN2012/083456 patent/WO2014015567A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1540033A (en) * | 2003-04-14 | 2004-10-27 | 三星电子株式会社 | Chemical vapor deposition installation with integrated diffuser frame |
| US20040261712A1 (en) * | 2003-04-25 | 2004-12-30 | Daisuke Hayashi | Plasma processing apparatus |
| CN101030538A (en) * | 2006-02-27 | 2007-09-05 | 东京毅力科创株式会社 | Plasma etching apparatus and method |
| CN201215800Y (en) * | 2008-04-15 | 2009-04-01 | 上海华虹Nec电子有限公司 | Upper electrode for semiconductor etching device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103745904A (en) * | 2013-12-31 | 2014-04-23 | 深圳市华星光电技术有限公司 | Dry etcher and etching method for same |
| CN103745904B (en) * | 2013-12-31 | 2016-08-17 | 深圳市华星光电技术有限公司 | A kind of dry etching machine and lithographic method thereof |
| CN109360779A (en) * | 2018-11-13 | 2019-02-19 | 深圳市华星光电半导体显示技术有限公司 | The top electrode and its manufacturing method of dry etching equipment |
| WO2020098187A1 (en) * | 2018-11-13 | 2020-05-22 | 深圳市华星光电半导体显示技术有限公司 | Upper electrode for dry etching apparatus and manufacturing method thereof |
| CN111599719A (en) * | 2020-05-20 | 2020-08-28 | Tcl华星光电技术有限公司 | Etching gas introducing mechanism and etching machine |
| CN111893537A (en) * | 2020-07-16 | 2020-11-06 | 合肥微睿光电科技有限公司 | Method for improving uniformity of anode oxide film of large-size upper electrode plate by changing mounting and hanging mode |
| CN111893537B (en) * | 2020-07-16 | 2021-06-22 | 合肥微睿光电科技有限公司 | Method for improving uniformity of anode oxide film of large-size upper electrode plate by changing mounting and hanging mode |
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| Publication number | Publication date |
|---|---|
| WO2014015567A1 (en) | 2014-01-30 |
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Application publication date: 20121128 |