CN102790151A - Substrate for LED (Light Emitting Diode) chip and preparation method thereof - Google Patents
Substrate for LED (Light Emitting Diode) chip and preparation method thereof Download PDFInfo
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- CN102790151A CN102790151A CN2012102928754A CN201210292875A CN102790151A CN 102790151 A CN102790151 A CN 102790151A CN 2012102928754 A CN2012102928754 A CN 2012102928754A CN 201210292875 A CN201210292875 A CN 201210292875A CN 102790151 A CN102790151 A CN 102790151A
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Abstract
The invention discloses a substrate for an LED (Light Emitting Diode) chip and a preparation method thereof. The substrate for the LED chip comprises a main body, wherein a plurality of subareas are arranged on the main body; each of the subareas has a three-dimensional nanometer stepped structure for controlling the reflected light phase distribution; and the three-dimensional nanometer stepped structure has a plurality of ladders in different depth. The preparation method for the substrate provided by the invention comprises the following steps: supplying a pattern-free substrate; taking the subareas as units and designing a simulating microstructure for controlling the reflected light phase distribution; converting the simulating microstructure into a simulating three-dimensional nanometer stepped structure; and preparing the designed simulating three-dimensional nanometer stepped structure onto each subarea of the pattern-free substrate, thereby forming the substrate for the LED chip. The substrate for the LED chip prepared according to the preparation method provided by the invention is used for solving the problems that the present substrate cannot control the reflected light phase distribution and the like, increasing the light emission quantity of the LED chip and increasing the luminance of the LED chip.
Description
Technical field
The present invention relates to Light-Emitting Diode (LED) manufacturing field, particularly relate to a kind of substrate that is used for led chip and preparation method thereof.
Background technology
LED technology of the prior art is the range upon range of epitaxial structures such as n type gallium nitride, SQW, P type gallium nitride of on smooth substrate, growing; On said range upon range of epitaxial structure, form nesa coating and perforate then; Then make P, N electrode, prepare passivation protection layer structure at last.But develop into the present stage of marching to Landscape Lighting and general illumination as LED; The luminosity of LED has run into higher challenge; Under the space condition of limited that internal quantum efficiency can improve; Smooth substrate can not be satisfied the demand, so in order further to improve the luminosity of LED, the researcher of LED industry has been introduced patterned substrate.So-called patterned substrate is exactly that way through wet method high temperature corrosion or dry etching forms micrometer structures such as similar hemisphere, truncated cone-shaped, taper shape, triangular pyramidal, polygonal pyramid shape, cylindricality or irregular figure on substrate; The light wave that these micrometer structures send SQW has scattering and diffuse reflection effect, can improve the recovery rate of light to a certain extent.But this type micrometer structure theoretical basis for design all is refraction, reflection theory or scattering theory in the geometric optics, and is less to wave optics and diffraction theory consideration, is difficult to the challenge that reply LED in future needs more senior luminosity.
Therefore, how to improve the luminosity of LED to a greater extent, become the problem that those skilled in the art need solve.
Summary of the invention
The objective of the invention is to, a kind of substrate that is used for led chip and preparation method thereof is provided, can not control problems such as reflective phase distribution, improved the amount of light of led chip, the brightness that has improved led chip to solve existing substrate.
For solving the problems of the technologies described above, the present invention provides a kind of substrate that is used for led chip, comprising:
Main body, said main body is provided with some subregions;
All have the three-dimensional manometer hierarchic structure that is used to control the reflective phase distribution on each said subregion, said three-dimensional manometer hierarchic structure has the ladder of some different depths.
Further, said three-dimensional manometer hierarchic structure has N level ladder, wherein N=2
M, M is a positive integer.
Further, the depth d of the Z level ladder in the said three-dimensional manometer hierarchic structure
ZFor
1≤Z≤N, Z are positive integer, and λ is a wavelength.
Further, the minimum unit of the ladder table top of said three-dimensional manometer hierarchic structure ladder is shaped as square, triangle, rectangle, regular hexagon or parallelogram, and the length of side of said minimum unit is 10nm～500nm.
Further, has the aisle between the adjacent said subregion.
Further, said subregion is shaped as square, triangle, rectangle, hexagon or parallelogram.
Further, the material of said substrate is a kind of in sapphire, carborundum or the silicon.
Further, the present invention also provides a kind of preparation method of three-dimensional manometer hierarchic structure substrate, comprising:
No graph substrate is provided, has some subregions on the said no graph substrate;
With said subregion is unit, and design has the emulation micro-structural that the control reflective phase distributes;
Said emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure;
The emulation three-dimensional manometer hierarchic structure that designs is prepared on each subregion of said no graph substrate, forms the substrate with three-dimensional manometer hierarchic structure, said three-dimensional manometer hierarchic structure has the ladder of some different depths.
Further, has the emulation micro-structural that the control reflective phase distributes according to the light wave diffraction theory through the beam shaping algorithm design.
Further; Said light wave diffraction theory is scalar diffraction theory or Vector Diffraction Theory; Said scalar diffraction theory is that kirchhoff scalar diffraction theory, fresnel diffraction theory or Fraunhofer diffraction are theoretical, and said Vector Diffraction Theory is Rayleigh-Suo Mofei diffraction theory or plane wave angular spectrum diffraction theory.
Further, said beam shaping algorithm be based on the Fourier transform iteration algorithm, based on one or both the combination in the algorithm of optimization searching of search extreme value.
Further, adopt normalized method that said emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure.
Further; The preparation method who the emulation three-dimensional manometer hierarchic structure that designs is prepared on each subregion of said no graph substrate is: direct writing technology, exposure and etching transfer techniques, die pressing, electroforming and injection moulding, sol-gel process, thermosoling, ions diffusion technology.
Further, said direct writing technology comprises a kind of in direct electronic beam writing technology, ion beam direct writing technology or the laser direct-writing technology.
Further, said direct writing technology is through the ladder degree of depth of the time of staying or the said three-dimensional manometer hierarchic structure of strength control.
Further, said exposure and etching transfer techniques comprise a kind of in multiexposure, multiple exposure single lithographic technique, multiexposure, multiple exposure multiple etching technology or the single exposure single lithographic technique.
Further, in the said multiexposure, multiple exposure single lithographic technique, the thickness of photoresist is greater than the ladder degree of depth of the three-dimensional manometer hierarchic structure after changing in proportion, and said ratio is the etching selection ratio of the material of said photoresist and said substrate.
Further, said three-dimensional manometer hierarchic structure has N level ladder, wherein N=2
M, M is a positive integer.
Further, the depth d of the Z level ladder in the said three-dimensional manometer hierarchic structure
ZFor
1≤Z≤N, Z are positive integer, and λ is a wavelength.
Further, the minimum unit of the ladder table top of said three-dimensional manometer hierarchic structure ladder is shaped as square, triangle, rectangle, regular hexagon or parallelogram, and the length of side of said minimum unit is 10nm～500nm.
Further, has the aisle between the adjacent said subregion.
Further, said subregion is shaped as square, triangle, rectangle, hexagon or parallelogram.
Further, the material of said substrate is a kind of in sapphire, carborundum or the silicon.
Compared with prior art, substrate that is used for led chip provided by the invention and preparation method thereof has the following advantages:
1, the present invention provides a kind of substrate that is used for led chip and preparation method thereof; This is used for all having the three-dimensional manometer hierarchic structure that the control reflective phase distributes on each subregion of substrate of led chip; Compare with existing patterned substrate; Pattern on the subregion provided by the present invention is not the patterning of simple repeated arrangement; But having the three-dimensional manometer hierarchic structure of the ladder of different depth in the position, the radiative light wave that this three-dimensional manometer hierarchic structure is sent mqw light emitting layer has simple scattering and diffuse reflection effect incessantly, also has diffraction.When light propagates into three-dimensional manometer hierarchic structure; This three-dimensional manometer hierarchic structure can on purpose change catoptrical PHASE DISTRIBUTION through diffraction; Make through the angle of total reflection of the catoptrical angle of departure of this three-dimensional manometer hierarchic structure less than led chip; Make reflection luminous energy all escape, increase the light emission rate of led chip from the exiting surface of led chip; This three-dimensional manometer hierarchic structure can be controlled the dispersion angle of led chip bright dipping simultaneously, improves its axial luminosity.
2, the present invention provides a kind of substrate that is used for led chip and preparation method thereof; This is used for all having the three-dimensional manometer hierarchic structure that the control reflective phase distributes on each subregion of substrate of led chip; The three-dimensional manometer hierarchic structure of different subregions is identical; Have the aisle between the adjacent sectors, this aisle formed before grown epitaxial layer, can reduce the various stress between epitaxial loayer and the substrate well.
3, the present invention provides a kind of substrate that is used for led chip and preparation method thereof, and this is used for the led chip manufacturing of the substrate of led chip applicable to virtually any size, and the technology of preparation method is many, can select flexibly according to concrete needs.
Description of drawings
Fig. 1 is the flow chart of the substrate fabrication method that is used for led chip of one embodiment of the invention;
Fig. 2 be one embodiment of the invention through the propagation sketch map of light behind the beam shaping device at free space;
Fig. 3 is the Fourier transform iterative algorithm basic flow sheet of one embodiment of the invention;
Fig. 4 is the search extreme value optimized Algorithm basic flow sheet of one embodiment of the invention;
Fig. 5 is the sketch map of the three-dimensional manometer hierarchic structure of one embodiment of the invention;
Fig. 6 is the sketch map of the substrate that is used for led chip of one embodiment of the invention.
Embodiment
To combine sketch map that substrate that is used for led chip of the present invention and preparation method thereof is described in more detail below; The preferred embodiments of the present invention have wherein been represented; Should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing to those skilled in the art, and not as limitation of the present invention.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; The present invention provides a kind of substrate that is used for led chip and preparation method thereof; This substrate that is used for led chip comprises main body; Said main body is provided with some subregions, all has on each said subregion to be used to control the three-dimensional manometer hierarchic structure that reflective phase distributes, and said three-dimensional manometer hierarchic structure has the ladder of some different depths.This three-dimensional manometer hierarchic structure is passed through the beam shaping algorithm design according to the light wave diffraction theory, and obtains through normalized method, and this substrate that is used for led chip can on purpose change catoptrical PHASE DISTRIBUTION through diffraction.
A kind of pure phase place diffraction type beam shaping device is arranged in the laser beam shaping field; Has three-dimensional manometer hierarchic structure on this device surface; Feasible bundle spot size, shape and spatial light intensity regardless of laser beam distributes; As long as this laser beam is through this pure phase place diffraction type beam shaping device, this device just can be transformed into needed pictorial pattern with this laser beam noenergy loss ground.Pure phase place diffraction type beam shaping device is the noenergy loss when realizing beam shaping; Pure phase place diffraction type beam shaping device why can realize reason that noenergy loss ground changes light shape be exactly it be the phase information (being the direction of propagation of light) that only changes light wave, and do not change the amplitude information (being light intensity) of light wave.Because pure phase place diffraction type beam shaping device has the advantage of noenergy loss when realizing beam shaping; So the present invention is applied to the LED field with the operation principle of above-mentioned pure phase structure and this structure; Substrate is equal to above-mentioned pure phase place diffraction type beam shaping device; On that surface that substrate contacts with extension, produce pre-designed three-dimensional manometer hierarchic structure; This has the substrate of three-dimensional manometer hierarchic structure just can break away from the restriction of the angle of total reflection, with propagating into the luminous energy that its lip-deep all luminous energy are transformed into the led chip of can escaping, moreover; This substrate with three-dimensional manometer hierarchic structure can also determine the dispersion angle of tube core, improves the brightness of axial light.
In conjunction with above-mentioned core concept, the present invention provides a kind of substrate that is used for led chip, comprising:
Main body, said main body is provided with some subregions;
All have the three-dimensional manometer hierarchic structure that is used to control the reflective phase distribution on each said subregion, said three-dimensional manometer hierarchic structure has the ladder of some different depths.
Further, in conjunction with the above-mentioned substrate that is used for led chip, the present invention also provides a kind of manufacturing approach, may further comprise the steps:
Step S11 provides no graph substrate, has some subregions on the said no graph substrate;
Step S12 is a unit with said subregion, and design has the emulation micro-structural that the control reflective phase distributes;
Step S13 is converted into emulation three-dimensional manometer ladder knot with said emulation micro-structural;
Step S14 is prepared into the emulation three-dimensional manometer hierarchic structure that designs on each subregion of said no graph substrate, is formed for the substrate of led chip, and said three-dimensional manometer hierarchic structure has the ladder of some different depths;
Below enumerate several embodiment of said substrate that is used for led chip and preparation method thereof; To clearly demonstrate content of the present invention; Will be clear that; Content of the present invention is not restricted to following examples, and the improvement of other routine techniques means by one of ordinary skill in the art is also within thought range of the present invention.
[first embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.Below please refer to Fig. 1, it is the flow process of the substrate fabrication method that is used for led chip of one embodiment of the invention.
As shown in Figure 1, carry out step S11, no graph substrate is provided, have some subregions on the said no graph substrate.The material of substrate is a kind of in sapphire, carborundum or the silicon.In the present embodiment, the material of substrate is a sapphire, and sapphire stability is fine and mechanical strength is high, is easy to handle and clean.But other material, like carborundum or silicon also within thought range of the present invention.
Carrying out step S12, is unit with said subregion, and design has the emulation micro-structural that the control reflective phase distributes.Has the emulation micro-structural that the control reflective phase distributes according to the light wave diffraction theory through the beam shaping algorithm design.What the light wave diffraction theory was preferable is scalar diffraction theory or Vector Diffraction Theory; Wherein, What scalar diffraction theory was preferable is kirchhoff scalar diffraction theory, fresnel diffraction theory or Fraunhofer diffraction theory etc., and what Vector Diffraction Theory was preferable is Rayleigh-Suo Mofei diffraction theory or plane wave angular spectrum diffraction theory etc.The beam shaping algorithm is preferable be based on the Fourier transform iteration algorithm, based on one or both the combination in the algorithm of the optimization searching of search extreme value, like hill-climbing algorithm, simulated annealing, gene genetic algorithm, poplar-Gu algorithm etc.
In the present embodiment, the light wave diffraction theory of employing is the kirchhoff scalar diffraction theory, and is as shown in Figure 2, and it is at the propagation sketch map of free space through light behind the beam shaping device.In Fig. 2, the input face coordinate is (x
I, y
I), the output face coordinate is (x
O, y
O).According to the kirchhoff scalar diffraction theory, the optical field distribution U in the output face
O(x
O, y
O) with input face on the structure function of emulation micro-structural
And incident field distribution U
I(x
I, y
I) between relation can represent as follows:
After various being similar to, above-mentioned formula deformability is:
wherein FFT represents Fourier transform.
Can find out from top analysis, regardless of the emulation micro-structural on the input face, can both through above-mentioned formula calculate in the output face optical field distribution how.In like manner; Can utilize which type of the ultrafast computational speed of computer is through the optical field distribution that above-mentioned formula calculates in the output face all to nearly all possible structure; Then with the output face of needs on PHASE DISTRIBUTION do comparison and the output face that needs on the pairing emulation micro-structural of the immediate optical field distribution of optical field distribution be exactly the emulation micro-structural that board design goes out.Here it is, and present embodiment will introduce can control the basic principle of the emulation micro-structural that reflective phase distributes.
Fig. 3 is the basic flow sheet based on the Fourier transform iterative algorithm, and wherein, FFT represents Fourier transform, and IFFT represents inverse Fourier transform.As shown in Figure 3; At first give the emulation micro-structural a rational initial configuration; Let the product of distribution of amplitudes of rational initial configuration and incident field as spatial domain incident wave function, it is done Fourier transform obtain the light field COMPLEX AMPLITUDE in the output face, therefrom isolate phase place Ф
O (k)(x
O, y
O), let isolated phase place Ф
O (k)(x
O, y
O) and output face on the product of the light field distribution of amplitudes (predefined light field distribution of amplitudes) of hoping to obtain as the frequency domain wave function, it is done inverse Fourier transform obtains the space COMPLEX AMPLITUDE on the plane of incidence, therefrom isolate phase place Ф
I (k+1)(x
I, y
I), let isolated phase place Ф
I (k+1)(x
I, y
I) and the product of the distribution of amplitudes of incident field as the spatial domain incident wave function of next iteration, accomplish one time loop iteration.So move in circles up to drawing satisfied result.
Fig. 4 is search extreme value optimized Algorithm basic flow sheet; As shown in Figure 4; A selected at random initial configuration is as the prototype structure that circulates for the first time; Prototype structure is done a small change according to certain disturbance strategy of formulating in advance to each cellular construction wherein and is produced first new construction; Two kinds of structures are done assessment respectively to be selected assessment and tied structure preferably as the prototype structure of circulation next time; Repeat aforesaid operations till evaluation result is satisfied; Described assessment is done comparison to each structure substitution formula
to optical field distribution in the output face that obtains and the target light field distribution in the output face exactly; The structure of the correspondence that difference is little is exactly reasonable structure, up to obtaining satisfied structural constraint circulation.
In the present embodiment; Because the material of the extension luminescent layer of led chip is a gallium nitride, the angle of total reflection of gallium nitride is about 23 °, so; According to the kirchhoff scalar diffraction theory; With as Fig. 3 or algorithm shown in Figure 4 (or based on as Fig. 3 or Fig. 4 algorithm after improving) in computer, design can reverberation be transformed into and have 23 ° of emulation micro-structurals with the interior angle of divergence, with guarantee reflection luminous energy all from the epitaxial loayer of led chip escape come out the light emission rate of increase led chip.Simultaneously, change catoptrical dispersion angle, made reverberation that the direction of concentrating more arranged, improved the axial luminosity of LED.But being not limited to reverberation is transformed into, the emulation micro-structural that the control reflective phase distributes has 23 ° with the interior angle of divergence; Difference according to the material of extension luminescent layer; The angle of total reflection is different; Has the angle of total reflection with the interior angle of divergence as long as reverberation is transformed into, also within thought range of the present invention.The simulation architecture that the emulation micro-structural of in step S12, designing just simulates in computer is not prepared on the concrete object.
Carry out step S13, said emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure.Preferable, adopt normalized method that said emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure, emulation three-dimensional manometer hierarchic structure is carried out the N rank be similar to, but the method that quantizes is also within thought range of the present invention.Said emulation three-dimensional manometer hierarchic structure has N level ladder, and is preferable, N=2
M, positive integer, as when M is 1,2,3,4, N is 2,4,8,16 etc.The depth d of the Z level ladder in the said emulation three-dimensional manometer hierarchic structure
ZFor
λ is a wavelength, and in the present embodiment, λ is 465nm.The minimum unit of the ladder table top of said emulation three-dimensional manometer hierarchic structure ladder is shaped as square, but triangle, rectangle, regular hexagon or parallelogram also can.Preferable, the foursquare length of side is 10nm～500nm, like 20nm, 50nm, 100nm, 200nm, 300nm or 400nm.The simulation architecture that the emulation three-dimensional manometer hierarchic structure of in step S13, designing just simulates in computer is not prepared on the concrete object.
In the present embodiment; Owing to provide a kind of based on the substrate that excites blue light (wavelength is 465nm) led chip; So the emulation micro-structural is normalized to the emulation three-dimensional manometer hierarchic structure that coordinate is x and y, wherein the unit of x and y is a square, so the minimum unit of the ladder table top of emulation three-dimensional manometer hierarchic structure ladder is shaped as square; The length of side is 100nm, and is as shown in Figure 5.In the present embodiment, three-dimensional manometer hierarchic structure is that 4 rank are approximate, promptly has 4 grades of ladders, and wherein M is 2, and N is 4.The degree of depth of the 1st grade of ladder does
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
Carry out step S14; The emulation three-dimensional manometer hierarchic structure that designs is prepared on each subregion of said no graph substrate; Be formed for the substrate of led chip, the substrate that is used for led chip comprises main body, and said main body is provided with some subregions; All have the three-dimensional manometer hierarchic structure that is used to control the reflective phase distribution on each said subregion, said three-dimensional manometer hierarchic structure has the ladder of some different depths.With the three-dimensional manometer hierarchic structure that designs be prepared into preparation method on the said no graph substrate preferable be direct writing technology; Exposure and etching transfer techniques, die pressing, electroforming and injection moulding (Lithographie Galanoformung and Abformung are called for short the LIGA method), sol-gel process, thermosoling, ions diffusion technology.Wherein, direct writing technology comprises a kind of in direct electronic beam writing technology, ion beam direct writing technology or the laser direct-writing technology, and said direct writing technology is through the ladder degree of depth of the time of staying or the said three-dimensional manometer hierarchic structure of strength control; Exposure and etching transfer techniques comprise a kind of in multiexposure, multiple exposure single lithographic technique, multiexposure, multiple exposure multiple etching technology or the single exposure single lithographic technique; Through step S14; Three-dimensional manometer hierarchic structure is that unit is arranged at the substrate that is used for led chip with the subregion, and the three-dimensional manometer hierarchic structure of different subregions is identical, preferable; Has the aisle between the adjacent sectors; As shown in Figure 6, this aisle formed before grown epitaxial layer, can reduce the various stress between epitaxial loayer and the substrate well.Wherein, what the shape of subregion was preferable is square, triangle, rectangle, hexagon or parallelogram, after grown epitaxial layer, is that unit forms the LED tube core with the subregion.
In the present embodiment, the preparation method of step S14 is the laser direct-writing technology.With above-mentioned three-dimensional manometer hierarchic structure as shown in Figure 5 input computer; Through the time of staying at each the coordinate place of computer control ultraviolet laser after normalization; Three-dimensional manometer hierarchic structure as shown in Figure 5 is write on the no graph substrate with the form pointwise that separates subregion, formed the substrate that is used for led chip as shown in Figure 6.Wherein, Because the minimum unit of three-dimensional manometer hierarchic structure scala media halfpace face is a square; So incide the bundle spot of the uv laser beam on the no graph substrate is the square pencil of forms spot of 100nmx100nm; Through the parameters such as frequency or time of control uv laser beam, prepare the different ladder degree of depth at each coordinate place, wherein; At the 4th grade of ladder degree of depth place time of staying of corresponding laser the longest, the time of staying of corresponding laser shortens successively at the 3rd level ladder degree of depth, the 2nd grade of ladder degree of depth and the 1st grade of ladder degree of depth place.
[second embodiment]
Second embodiment of the invention provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.
Second embodiment is on the basis of first embodiment, and difference is that in step S13, λ is 525nm, and three-dimensional manometer hierarchic structure is that 4 rank are approximate, promptly has 4 grades of ladders, and wherein M is 2, and N is 4.The 1st grade of ladder degree of depth does
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth difference of the 4th grade of ladder:
In the present embodiment, among the step S14, because the degree of depth that laser writes is different with the degree of depth that the laser of first embodiment writes, so ultraviolet laser is corresponding changing of the time of staying at each ladder place.
[the 3rd embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.The 3rd embodiment is on the basis of first embodiment; Difference is; The preparation method of step S14 is a multiexposure, multiple exposure single lithographic technique; Wherein, the thickness of photoresist is greater than the ladder degree of depth of the three-dimensional manometer hierarchic structure after changing in proportion, and said ratio is the etching selection ratio of the material of said photoresist and said substrate.
At first, on no graph substrate, apply the thick positive photoresist of one deck 1um equably.
Then, photoresist is made public.Because in the present embodiment, the etching selection ratio of photoresist and saphire substrate material is 2: 1, so after the ladder degree of depth of the normalized emulation three-dimensional manometer of step S13 hierarchic structure is amplified 2 times, transfer on the photoresist through the form of four exposures.Wherein, it is the local printing opacity of 465nm that the used reticle of making public for the first time has only the ladder degree of depth, and all the other places are light tight; It is that the 465nm and the ladder degree of depth are the local printing opacity of 349nm that the used reticle of making public for the second time has only the ladder degree of depth, and all the other places are light tight; It is the local light tight of 116nm and 0nm (datum level of ladder) that the used reticle of making public for the third time has only the ladder degree of depth, all the other local all printing opacities; It is the local light tight of 0nm that the 4th the used reticle of exposure has only the ladder degree of depth, all the other local all printing opacities.The time of four exposures is identical.
At last, the no graph substrate after the exposure is carried out a step etching, produce the substrate that is used for led chip as shown in Figure 6.
[the 4th embodiment]
Fourth embodiment of the invention provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.The 4th embodiment is on the basis of the 3rd embodiment, because green glow is different with the wavelength of blue light, difference is that in step S13, λ is 525nm, and emulation three-dimensional manometer hierarchic structure is that 4 rank are approximate, promptly has 4 grades of ladders, and wherein M is 2, and N is 4.The degree of depth of the 1st grade of ladder does
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
In step S14, on no graph substrate, apply the thick positive photoresist of one deck 1.1um equably.It is the local printing opacity of 525nm that the used reticle of making public for the first time has only the ladder degree of depth, and all the other places are light tight; It is that the 525nm and the ladder degree of depth are the local printing opacity of 394nm that the used reticle of making public for the second time has only the ladder degree of depth, and all the other places are light tight; It is the local light tight of 131nm and 0nm that the used reticle of making public for the third time has only the ladder degree of depth, all the other local all printing opacities; It is the local light tight of 0nm that the 4th the used reticle of exposure has only the ladder degree of depth, all the other local all printing opacities.
At last, the no graph substrate after the exposure is carried out a step etching, produce the substrate that is used for led chip as shown in Figure 6.
[the 5th embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.The 5th embodiment is on the basis of first embodiment, and difference is that the preparation method of step S14 is a multiexposure, multiple exposure multiple etching technology.
Step a applies the thick positive photoresist of one deck 0.4um equably on no graph substrate;
Step b, adopting reticle is the place exposure of 465nm to the ladder degree of depth, do not make public in all the other places;
Step c carries out a step etching to the no graph substrate after the exposure;
Steps d; Repeating step a, step b, step c three times; Use different photolithography plates that the ladder degree of depth is made public, the ladder degree of depth is not made public, the ladder degree of depth is not made public and etching as the place of 0nm as the place of 116nm and 0nm as the place of 465nm and 349nm respectively; Produce the substrate that is used for led chip as shown in Figure 6.
[the 6th embodiment]
Sixth embodiment of the invention provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.The 6th embodiment is on the basis of the 5th embodiment, because green glow is different with the wavelength of blue light, difference is that in step S13, λ is 525nm, and emulation three-dimensional manometer hierarchic structure is that 4 rank are approximate, promptly has 4 grades of ladders, and wherein M is 2, and N is 4.The degree of depth of the 1st grade of ladder does
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder b is:
In step S14, step a applies the thick positive photoresist of one deck 0.4um equably on no graph substrate;
Step b, adopting reticle is the place exposure of 525nm to the ladder degree of depth, do not make public in all the other places;
Step c carries out a step etching to the no graph substrate after the exposure;
Steps d; Repeating step a, step b, step c three times; Use different photolithography plates that the ladder degree of depth is made public, the ladder degree of depth is not made public, the ladder degree of depth is not made public and etching as the place of 0nm as the place of 131nm and 0nm as the place of 525nm and 394nm respectively, produce the substrate that is used for led chip as shown in Figure 6.
[the 7th embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.The 7th embodiment is on the basis of first embodiment, and difference is that the preparation method of step S14 is a single exposure single lithographic technique.
Step 1) evenly applies the thick positive photoresist of one deck 1um on no graph substrate.
Step 2), make the reticle with gamma characteristic, light transmission is different at the diverse location place for this reticle.Wherein, In the ladder degree of depth is corresponding place 100% printing opacity of 465nm, is corresponding place 75% printing opacity of 349nm in the ladder degree of depth, is corresponding place 50% printing opacity of 232nm in the ladder degree of depth; In the ladder degree of depth is corresponding place 25% printing opacity of 116nm, and all the other places are light tight.
Step 3) is with step 2) in reticle the positive photoresist that evenly applies in the step 1) is made public, on photoresist, form three-dimensional manometer hierarchic structure.
Step 4) is carried out etching to the no graph substrate of the coating photoresist that forms in the step 3), and the three-dimensional manometer hierarchic structure on the photoresist is copied on the no graph substrate, produces the substrate that is used for led chip as shown in Figure 6.
[the 8th embodiment]
The 8th year embodiment of the present invention provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is a gallium nitride.The 8th embodiment is on the basis of the 7th embodiment, because green glow is different with the wavelength of blue light, difference is that in step S 13, λ is 525nm, and three-dimensional manometer hierarchic structure is that 4 rank are approximate, promptly has 4 grades of ladders, and wherein M is 2, and N is 4.The degree of depth of the 1st grade of ladder does
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
In step S14, step 1) evenly applies the thick positive photoresist of one deck 1um on no graph substrate;
Step 2), make the reticle with gamma characteristic, light transmission is different at the diverse location place for this reticle.Wherein, In the ladder degree of depth is corresponding place 100% printing opacity of 525nm, is corresponding place 75% printing opacity of 394nm in the ladder degree of depth, is corresponding place 50% printing opacity of 263nm in the ladder degree of depth; In the ladder degree of depth is corresponding place 25% printing opacity of 131nm, and all the other places are light tight.
Step 3) is with step 2) in reticle the positive photoresist that evenly applies in the step 1) is made public, on photoresist, form three-dimensional manometer hierarchic structure.
Step 4) is carried out etching to the no graph substrate of the coating photoresist that forms in the step 3), and the three-dimensional manometer hierarchic structure on the photoresist is copied on the no graph substrate, produces the substrate that is used for led chip as shown in Figure 6.
The present invention provides a kind of substrate that is used for led chip to be not limited to the foregoing description; As the three-dimensional manometer hierarchic structure with the distribution of control reflective phase is not limited to above-mentioned preparation method; So long as have the substrate of three-dimensional manometer hierarchic structure; And this substrate can utilize theory of light diffraction control reflective phase to distribute, and does not obtain with COMPUTER CALCULATION like three-dimensional manometer hierarchic structure, also within thought range of the present invention; The preparation method who is used for the substrate of led chip is not limited to the foregoing description; As when adopting exposure and lithographic technique the emulation three-dimensional manometer hierarchic structure that designs to be prepared on each subregion of said no graph substrate; Can also use secondary photoresist, be that the prepared ladder degree of depth is opposite.
In sum; The present invention provides a kind of substrate that is used for led chip and preparation method thereof; This substrate that is used for led chip comprises main body; Be used to control the three-dimensional manometer hierarchic structure that reflective phase distributes, said three-dimensional manometer hierarchic structure is arranged on the said main body, and said three-dimensional manometer hierarchic structure has the ladder of some different depths.This three-dimensional manometer hierarchic structure is passed through the beam shaping algorithm design according to the light wave diffraction theory, and obtains through normalized method, and this substrate that is used for led chip can on purpose change catoptrical PHASE DISTRIBUTION through diffraction.Compared with prior art, substrate that is used for led chip provided by the invention and preparation method thereof has the following advantages:
1, the present invention provides a kind of substrate that is used for led chip and preparation method thereof; This is used for all having the three-dimensional manometer hierarchic structure that the control reflective phase distributes on each subregion of substrate of led chip; Compare with existing patterned substrate; Pattern on the subregion provided by the present invention is not the patterning of simple repeated arrangement; But having the three-dimensional manometer hierarchic structure of the ladder of different depth in the position, the radiative light wave that this three-dimensional manometer hierarchic structure is sent mqw light emitting layer has simple scattering and diffuse reflection effect incessantly, also has diffraction.When light propagates into three-dimensional manometer hierarchic structure; This three-dimensional manometer hierarchic structure can on purpose change catoptrical PHASE DISTRIBUTION through diffraction; Make through the angle of total reflection of the catoptrical angle of departure of this three-dimensional manometer hierarchic structure less than led chip; Make reflection luminous energy all escape, increase the light emission rate of led chip from the exiting surface of led chip; This three-dimensional manometer hierarchic structure can be controlled the dispersion angle of led chip bright dipping simultaneously, improves its axial luminosity.
2, the present invention provides a kind of substrate that is used for led chip and preparation method thereof; This is used for all having the three-dimensional manometer hierarchic structure that the control reflective phase distributes on each subregion of substrate of led chip; The three-dimensional manometer hierarchic structure of different subregions is identical; Have the aisle between the adjacent sectors, this aisle formed before grown epitaxial layer, can reduce the various stress between epitaxial loayer and the substrate well.
3, the present invention provides a kind of substrate that is used for led chip and preparation method thereof, and this is used for the led chip manufacturing of the substrate of led chip applicable to virtually any size, and the technology of preparation method is many, can select flexibly according to concrete needs.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (23)
1. a substrate that is used for led chip is characterized in that, comprising:
Main body, said main body is provided with some subregions;
All have the three-dimensional manometer hierarchic structure that is used to control the reflective phase distribution on each said subregion, said three-dimensional manometer hierarchic structure has the ladder of some different depths.
2. be used for the substrate of led chip like claim 1, it is characterized in that, said three-dimensional manometer hierarchic structure has N level ladder, wherein N=2
M, M is a positive integer.
3. be used for the substrate of led chip like claim 2, it is characterized in that, the depth D of the Z level ladder in the said three-dimensional manometer hierarchic structure
ZFor
1≤Z≤N, Z are positive integer, and λ is a wavelength.
4. the substrate that is used for led chip like claim 1; It is characterized in that; The minimum unit of the ladder table top of said three-dimensional manometer hierarchic structure ladder is shaped as square, triangle, rectangle, regular hexagon or parallelogram, and the length of side of said minimum unit is 10nm～500nm.
5. like any substrate that is used for led chip among the claim 1-4, it is characterized in that having the aisle between the adjacent said subregion.
6. like any substrate that is used for led chip among the claim 1-4, it is characterized in that, said subregion be shaped as square, triangle, rectangle, hexagon or parallelogram.
7. like any substrate that is used for led chip among the claim 1-4, it is characterized in that the material of said substrate is a kind of in sapphire, carborundum or the silicon.
8. preparation method who is used for the substrate of led chip comprises:
No graph substrate is provided, has some subregions on the said no graph substrate;
With said subregion is unit, and design has the emulation micro-structural that the control reflective phase distributes;
Said emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure;
The emulation three-dimensional manometer hierarchic structure that designs is prepared on each subregion of said no graph substrate, is formed for the substrate of led chip, said three-dimensional manometer hierarchic structure has the ladder of some different depths.
9. be used for the preparation method of the substrate of led chip like claim 8, it is characterized in that, have the emulation micro-structural that the control reflective phase distributes through the beam shaping algorithm design according to the light wave diffraction theory.
10. the preparation method who is used for the substrate of led chip like claim 9; It is characterized in that; Said light wave diffraction theory is scalar diffraction theory or Vector Diffraction Theory; Said scalar diffraction theory is that kirchhoff scalar diffraction theory, fresnel diffraction theory or Fraunhofer diffraction are theoretical, and said Vector Diffraction Theory is Rayleigh-Suo Mofei diffraction theory or plane wave angular spectrum diffraction theory.
11. be used for the preparation method of the substrate of led chip like claim 9, it is characterized in that, said beam shaping algorithm be based on the Fourier transform iteration algorithm, based on one or both the combination in the algorithm of the optimization searching of search extreme value.
12. be used for the preparation method of the substrate of led chip like claim 8, it is characterized in that, adopt normalized method that said emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure.
13. be used for the preparation method of the substrate of led chip like claim 8; It is characterized in that; The preparation method who the emulation three-dimensional manometer hierarchic structure that designs is prepared on each subregion of said no graph substrate is: direct writing technology, exposure and etching transfer techniques, die pressing, electroforming and injection moulding, sol-gel process, thermosoling, ions diffusion technology.
14. be used for the preparation method of the substrate of led chip, it is characterized in that said direct writing technology comprises a kind of in direct electronic beam writing technology, ion beam direct writing technology or the laser direct-writing technology like claim 13.
15. be used for the preparation method of the substrate of led chip, it is characterized in that said direct writing technology is through the ladder degree of depth of the time of staying or the said three-dimensional manometer hierarchic structure of strength control like claim 14.
16. be used for the preparation method of the substrate of led chip, it is characterized in that said exposure and etching transfer techniques comprise a kind of in multiexposure, multiple exposure single lithographic technique, multiexposure, multiple exposure multiple etching technology or the single exposure single lithographic technique like claim 13.
17. be used for the preparation method of the substrate of led chip like claim 16; It is characterized in that; In the said multiexposure, multiple exposure single lithographic technique; The thickness of photoresist is greater than the ladder degree of depth of the three-dimensional manometer hierarchic structure after changing in proportion, and said ratio is the etching selection ratio of the material of said photoresist and said substrate.
18., it is characterized in that said three-dimensional manometer hierarchic structure has N level ladder, wherein N=2 like any preparation method who is used for the substrate of led chip among the claim 8-17
M, M is a positive integer.
19., it is characterized in that the depth d of the Z level ladder in the said three-dimensional manometer hierarchic structure like any preparation method who is used for the substrate of led chip among the claim 8-17
ZFor
1≤Z≤N, Z are positive integer, and λ is a wavelength.
20. like any preparation method who is used for the substrate of led chip among the claim 8-17; It is characterized in that; The minimum unit of the ladder table top of said three-dimensional manometer hierarchic structure ladder is shaped as square, triangle, rectangle, regular hexagon or parallelogram, and the length of side of said minimum unit is 10nm～500nm.
21., it is characterized in that having the aisle between the adjacent said subregion like any preparation method who is used for the substrate of led chip among the claim 8-17.
22., it is characterized in that being shaped as of said subregion is square, triangle, rectangle, hexagon or parallelogram like any substrate that is used for led chip among the claim 8-17.
23., it is characterized in that the material of said substrate is a kind of in sapphire, carborundum or the silicon like any preparation method who is used for the substrate of led chip among the claim 8-17.
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| CN106449897A (en) * | 2015-08-10 | 2017-02-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | Oriented-growing method of quantum structure based on laser direct-writing process |
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