CN202712248U - Substrate for LED chip - Google Patents
Substrate for LED chip Download PDFInfo
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- CN202712248U CN202712248U CN 201220408508 CN201220408508U CN202712248U CN 202712248 U CN202712248 U CN 202712248U CN 201220408508 CN201220408508 CN 201220408508 CN 201220408508 U CN201220408508 U CN 201220408508U CN 202712248 U CN202712248 U CN 202712248U
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Abstract
The utility model discloses a substrate for an LED chip. The substrate for the LED chip comprises a main body, wherein a plurality of subareas are arranged on the main body; each of the subareas has a three-dimensional nanometer stepped structure for controlling the reflected light phase distribution; and the three-dimensional nanometer stepped structure has a plurality of steps with different depths. The substrate for the LED chip prepared by the utility model solves the problems that the present substrate cannot control the reflected light phase distribution and the like, increases the light emission quantity of the LED chip and increases the luminance of the LED chip.
Description
Technical field
The utility model relates to Light-Emitting Diode (LED) manufacturing field, particularly relates to a kind of substrate for led chip.
Background technology
LED technique of the prior art is at stacked epitaxial structures such as smooth Grown n type gallium nitride, quantum well, P type gallium nitride; then form nesa coating and perforate at described stacked epitaxial structure; then make P, N electrode, prepare at last passivation protection layer structure.But develop into the present stage of marching to Landscape Lighting and general illumination as LED, the luminosity of LED has run into higher challenge, in the situation of the limited space that internal quantum efficiency can improve, smooth substrate can not be satisfied the demand, so in order further to improve the luminosity of LED, the researcher of LED industry has been introduced patterned substrate.So-called patterned substrate is exactly that way by wet method high temperature corrosion or dry etching forms the micrometer structures such as similar hemisphere, truncated cone-shaped, taper shape, triangular pyramidal, polygonal pyramid shape, cylindricality or irregular figure at substrate, the light wave that these micrometer structures send quantum well has scattering and diffuse reflection effect, can improve to a certain extent the recovery rate of light.But the theoretical foundation of this class micrometer structure design all is refraction, reflection theory or scattering theory in the geometric optics, and is less to wave optics and diffraction theory consideration, is difficult to the challenge that reply LED in future needs more senior luminosity.
Therefore, how to improve to a greater extent the luminosity of LED, become the problem that those skilled in the art need to solve.
The utility model content
The purpose of this utility model is, a kind of substrate for led chip is provided, and can not control the problems such as reflective phase distribution to solve existing substrate, has improved the amount of light of led chip, the brightness that has improved led chip.
For solving the problems of the technologies described above, the utility model provides a kind of substrate for led chip, comprising:
Main body is provided with some subregions on the described main body;
All have the three-dimensional manometer hierarchic structure that distributes for the control reflective phase on each described subregion, described three-dimensional manometer hierarchic structure has the ladder of some different depths.
Further, described three-dimensional manometer hierarchic structure has N level ladder, wherein N=2
M, M is positive integer.
Further, the depth d of the Z level ladder in the described three-dimensional manometer hierarchic structure
ZFor
1≤Z≤N, Z are positive integer, and λ is wavelength.
Further, the minimum unit of the ladder table top of described three-dimensional manometer hierarchic structure ladder is shaped as square, triangle, rectangle, regular hexagon or parallelogram, and the length of side of described minimum unit is 10nm～500nm.
Further, has the aisle between the adjacent described subregion.
Further, described subregion is shaped as square, triangle, rectangle, hexagon or parallelogram.
Further, the material of described substrate is a kind of in sapphire, carborundum or the silicon.
Compared with prior art, the substrate that is used for led chip that the utility model provides has the following advantages:
1, the utility model provides a kind of substrate for led chip, all has the three-dimensional manometer hierarchic structure that the control reflective phase distributes on this each subregion for the substrate of led chip, compare with existing patterned substrate, pattern on the subregion provided by the utility model is not the patterning of simple repeated arrangement, but has the three-dimensional manometer hierarchic structure of the ladder of different depth in the position, the radiative light wave that this three-dimensional manometer hierarchic structure is sent mqw light emitting layer has simple scattering and diffuse reflection effect incessantly, also has diffraction.When light propagates into three-dimensional manometer hierarchic structure, this three-dimensional manometer hierarchic structure can on purpose change catoptrical PHASE DISTRIBUTION by diffraction, make through the angle of total reflection of the catoptrical angle of departure of this three-dimensional manometer hierarchic structure less than led chip, reflection luminous energy is all escaped out from the exiting surface of led chip, increase the light emission rate of led chip; This three-dimensional manometer hierarchic structure can be controlled the dispersion angle of led chip bright dipping simultaneously, improves its axial luminosity.
2, the utility model provides a kind of substrate for led chip, all has the three-dimensional manometer hierarchic structure that the control reflective phase distributes on this each subregion for the substrate of led chip, the three-dimensional manometer hierarchic structure of different subregions is identical, has the aisle between the adjacent sectors, this aisle formed before grown epitaxial layer, can reduce well the various stress between epitaxial loayer and the substrate.
3, the utility model provides a kind of substrate for led chip, should be used for the substrate of led chip applicable to the led chip manufacturing of any size, and the technology of preparation method is many, can be according to concrete needs flexible choice.
Description of drawings
Fig. 1 is the flow chart of the substrate fabrication method that is used for led chip of the utility model one embodiment;
Fig. 2 be the utility model one embodiment through free space propagation schematic diagram behind the beam shaping device;
Fig. 3 is the Fourier transform iterative algorithm basic flow sheet of the utility model one embodiment;
Fig. 4 is the search extremal optimization algorithm basic flow sheet of the utility model one embodiment;
Fig. 5 is the schematic diagram of the three-dimensional manometer hierarchic structure of the utility model one embodiment;
Fig. 6 is the schematic diagram of the substrate that is used for led chip of the utility model one embodiment.
Embodiment
Below in conjunction with schematic diagram the substrate for led chip of the present utility model is described in more detail, wherein represented preferred embodiment of the present utility model, should be appreciated that those skilled in the art can revise the utility model described here, and still realize advantageous effects of the present utility model.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as to restriction of the present utility model.
In the following passage, with way of example the utility model is described more specifically with reference to accompanying drawing.According to the following describes and claims, advantage of the present utility model and feature will be clearer.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-accurately ratio, only in order to convenient, the purpose of aid illustration the utility model embodiment lucidly.
Core concept of the present utility model is, the utility model provides a kind of substrate for led chip, the substrate that should be used for led chip comprises main body, be provided with some subregions on the described main body, all have the three-dimensional manometer hierarchic structure that distributes for the control reflective phase on each described subregion, described three-dimensional manometer hierarchic structure has the ladder of some different depths.This three-dimensional manometer hierarchic structure is theoretical by the beam shaping algorithm design according to Diffraction of light wave, and obtains by normalized method, and the substrate that should be used for led chip can on purpose change catoptrical PHASE DISTRIBUTION by diffraction.
A kind of pure phase position diffraction type beam shaping device is arranged in the laser beam shaping field, has three-dimensional manometer hierarchic structure on this device surface, so that distribute regardless of bundle spot size, shape and the spatial light intensity of laser beam, as long as this laser beam is by this pure phase position diffraction type beam shaping device, this device just can be transformed into needed pictorial pattern with this laser beam noenergy loss ground.Pure phase position diffraction type beam shaping device is the noenergy loss when realizing beam shaping, pure phase position diffraction type beam shaping device why can realize reason that noenergy loss ground changes light shape be exactly it be the phase information (being the direction of propagation of light) that only changes light wave, and do not change the amplitude information (being light intensity) of light wave.Because pure phase position diffraction type beam shaping device has the advantage of noenergy loss when realizing beam shaping, so the utility model is applied to the LED field with the operation principle of above-mentioned pure phase bit architecture and this structure, substrate is equal to above-mentioned pure phase position diffraction type beam shaping device, produce pre-designed three-dimensional manometer hierarchic structure on that surface that substrate contacts with extension, this has the substrate of three-dimensional manometer hierarchic structure just can break away from the restriction of the angle of total reflection, to propagate into its lip-deep all luminous energy and be transformed into the luminous energy of the led chip of can escaping, moreover, this substrate with three-dimensional manometer hierarchic structure can also determine the dispersion angle of tube core, improves the brightness of axial light.
In conjunction with above-mentioned core concept, the utility model provides a kind of substrate for led chip, comprising:
Main body is provided with some subregions on the described main body;
All have the three-dimensional manometer hierarchic structure that distributes for the control reflective phase on each described subregion, described three-dimensional manometer hierarchic structure has the ladder of some different depths.
Further, in conjunction with above-mentioned substrate for led chip, the utility model also provides a kind of manufacture method, may further comprise the steps:
Step S11 provides without graph substrate, and is described without having some subregions on the graph substrate;
Step S12, take described subregion as unit, design has the emulation micro-structural that the control reflective phase distributes;
Step S13 is converted into emulation three-dimensional manometer ladder knot with described emulation micro-structural;
Step S14 is prepared into the emulation three-dimensional manometer hierarchic structure that designs on described each subregion without graph substrate, is formed for the substrate of led chip, and described three-dimensional manometer hierarchic structure has the ladder of some different depths;
Below enumerate several embodiment of described substrate for led chip, to clearly demonstrate content of the present utility model, will be clear that, content of the present utility model is not restricted to following examples, and the improvement of other routine techniques means by those of ordinary skills is also within thought range of the present utility model.
[the first embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.Below please refer to Fig. 1, it is the flow process of the substrate fabrication method that is used for led chip of the utility model one embodiment.
As shown in Figure 1, carry out step S11, provide without graph substrate, described without having some subregions on the graph substrate.The material of substrate is a kind of in sapphire, carborundum or the silicon.In the present embodiment, the material of substrate is sapphire, and sapphire stability is fine and mechanical strength is high, is easy to process and clean.But other material, such as carborundum or silicon also within thought range of the present utility model.
Carry out step S12, take described subregion as unit, design has the emulation micro-structural that the control reflective phase distributes.Has the emulation micro-structural that the control reflective phase distributes according to the Diffraction of light wave theory by the beam shaping algorithm design.What the Diffraction of light wave theory was better is scalar diffraction theory or Vector Diffraction Theory, wherein, what scalar diffraction theory was better is kirchhoff scalar diffraction theory, fresnel diffraction theory or Fraunhofer diffraction theory etc., and what Vector Diffraction Theory was better is Rayleigh-Suo Mofei diffraction theory or plane wave Diffraction theory etc.The beam shaping algorithm is better be based on the Fourier transform iteration algorithm, based on one or both the combination in the algorithm of the Optimizing Search of search extreme value, such as hill-climbing algorithm, simulated annealing, gene genetic algorithm, poplar-Gu algorithm etc.
In the present embodiment, the Diffraction of light wave of employing theory is the kirchhoff scalar diffraction theory, and as shown in Figure 2, it is through free space propagation schematic diagram behind the beam shaping device.In Fig. 2, the input face coordinate is (x
I, y
I), the output face coordinate is (x
O, y
O).According to the kirchhoff scalar diffraction theory, the optical field distribution U in the output face
O(x
O, y
O) with input face on the structure function of emulation micro-structural
And incident field distribution U
I(x
I, y
I) between relation can be expressed as follows:
After various being similar to, above-mentioned formula deformability is:
Wherein FFT represents Fourier transform.
Can find out from top analysis, regardless of the emulation micro-structural on the input face, can both by above-mentioned formula calculate in the output face optical field distribution how.In like manner, can utilize which type of the ultrafast computational speed of computer is by the optical field distribution that above-mentioned formula calculates in the output face all to nearly all possible structure, then with the output face of needs on PHASE DISTRIBUTION compare, and the corresponding emulation micro-structural of the immediate optical field distribution of optical field distribution in the output face that needs is exactly the emulation micro-structural that board design goes out.Here it is, and present embodiment will introduce can control the basic principle of the emulation micro-structural that reflective phase distributes.
Fig. 3 is the basic flow sheet based on the Fourier transform iterative algorithm, and wherein, FFT represents Fourier transform, and IFFT represents inverse Fourier transform.As shown in Figure 3, at first give the emulation micro-structural a rational initial configuration, allow the product of distribution of amplitudes of rational initial configuration and incident field as spatial domain incident wave function, it is done Fourier transform obtain light field COMPLEX AMPLITUDE in the output face, therefrom isolate phase place Φ
O (k)(x
O, y
O), allow isolated phase place Φ
O (k)' (x
O, y
O) and output face on wish the light field distribution of amplitudes (predefined light field distribution of amplitudes) obtain product as the frequency domain wave function, it is done inverse Fourier transform obtains space COMPLEX AMPLITUDE on the plane of incidence, therefrom isolate phase place Φ
I (k+1)' (x
I, y
I), allow isolated phase place Φ
I (k+1)' (x
I, y
I) and the product of the distribution of amplitudes of incident field as the spatial domain incident wave function of next iteration, finish loop iteration one time.So move in circles until draw satisfied result.
Fig. 4 is search extremal optimization algorithm basic flow sheet, as shown in Figure 4, a selected initial configuration is as the prototype structure that circulates for the first time at random, prototype structure is done a small change according to certain perturbation strategy that pre-establishes to each cellular construction wherein and is produced first new construction, two kinds of structures are done respectively assessment to be selected assessment and tied structure preferably as the prototype structure of circulation next time, repeat aforesaid operations until evaluation result is satisfied, described assessment is exactly each structure substitution formula
Optical field distribution in the output face that obtains and the target light field distribution in the output face are compared, and the structure of the correspondence that difference is little is exactly reasonable structure, until obtain satisfied structural constraint circulation.
In the present embodiment, because the material of the extension luminescent layer of led chip is gallium nitride, the angle of total reflection of gallium nitride is about 23 °, so, according to the kirchhoff scalar diffraction theory, have 23 ° with the emulation micro-structural of the interior angle of divergence with in computer, designing reverberation to be transformed into such as Fig. 3 or algorithm shown in Figure 4 (or based on the algorithm after improving such as Fig. 3 or Fig. 4), all from the epitaxial loayer of led chip, escape out to guarantee reflection luminous energy, increase the light emission rate of led chip.Simultaneously, change catoptrical dispersion angle, made reverberation that the direction of more concentrating be arranged, improved the axial luminosity of LED.But being not limited to reverberation is transformed into, the emulation micro-structural that the control reflective phase distributes has 23 ° with the interior angle of divergence, difference according to the material of extension luminescent layer, the angle of total reflection is different, has the angle of total reflection with the interior angle of divergence as long as reverberation is transformed into, also within thought range of the present utility model.The simulation architecture that the emulation micro-structural of designing in step S12 just simulates in computer is not prepared on the concrete object.
Carry out step S13, described emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure.Better, adopt normalized method that described emulation micro-structural is converted into emulation three-dimensional manometer hierarchic structure, emulation three-dimensional manometer hierarchic structure is carried out the N rank be similar to, but the method that quantizes is also within thought range of the present utility model.Described emulation three-dimensional manometer hierarchic structure has N level ladder, and is better, N=2
M, positive integer, as when M is 1,2,3,4, N is 2,4,8,16 etc.The depth d of the Z level ladder in the described emulation three-dimensional manometer hierarchic structure
ZFor
λ is wavelength, and in the present embodiment, λ is 465nm.The minimum unit of the ladder table top of described emulation three-dimensional manometer hierarchic structure ladder is shaped as square, but triangle, rectangle, regular hexagon or parallelogram also can.Better, the foursquare length of side is 10nm～500nm, such as 20nm, 50nm, 100nm, 200nm, 300nm or 400nm.The simulation architecture that the emulation three-dimensional manometer hierarchic structure of designing in step S13 just simulates in computer is not prepared on the concrete object.
In the present embodiment, owing to provide a kind of substrate based on exciting blue light (wavelength is 465nm) led chip, so the emulation micro-structural is normalized to the emulation three-dimensional manometer hierarchic structure that coordinate is x and y, wherein the unit of x and y is square, so the minimum unit of the ladder table top of emulation three-dimensional manometer hierarchic structure ladder is shaped as square, the length of side is 100nm, as shown in Figure 5.In the present embodiment, three-dimensional manometer hierarchic structure is that 4 rank are approximate, namely has 4 grades of ladders, and wherein M is that 2, N is 4.The degree of depth of the 1st grade of ladder is
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
Carry out step S14, the emulation three-dimensional manometer hierarchic structure that designs is prepared on described each subregion without graph substrate, be formed for the substrate of led chip, the substrate that is used for led chip comprises main body, be provided with some subregions on the described main body, all have the three-dimensional manometer hierarchic structure that distributes for the control reflective phase on each described subregion, described three-dimensional manometer hierarchic structure has the ladder of some different depths.With the three-dimensional manometer hierarchic structure that designs be prepared into described without the preparation method on the graph substrate better for direct writing technology, exposure and etching transfer techniques, die pressing, electroforming and injection moulding (Lithographie Galanoformung and Abformung are called for short the LIGA method), sol-gel process, thermosoling, ion diffusion technique.Wherein, direct writing technology comprises a kind of in direct electronic beam writing technology, ion beam direct writing technology or the laser direct-writing technology, and described direct writing technology is by the ladder degree of depth of the time of staying or the described three-dimensional manometer hierarchic structure of strength control; Exposure and etching transfer techniques comprise a kind of in multiexposure, multiple exposure single lithographic technique, multiexposure, multiple exposure multiple etching technology or the single exposure single lithographic technique; Through step S14, three-dimensional manometer hierarchic structure is arranged at the substrate for led chip take subregion as unit, the three-dimensional manometer hierarchic structure of different subregions is identical, better, has the aisle between the adjacent sectors, as shown in Figure 6, this aisle formed before grown epitaxial layer, can reduce well the various stress between epitaxial loayer and the substrate.Wherein, what the shape of subregion was better is square, triangle, rectangle, hexagon or parallelogram, after grown epitaxial layer, forms the LED tube core take subregion as unit.
In the present embodiment, the preparation method of step S14 is the laser direct-writing technology.With above-mentioned three-dimensional manometer hierarchic structure input computer as shown in Figure 5, by the time of staying at each the coordinate place of computer control ultraviolet laser after normalization, three-dimensional manometer hierarchic structure is as shown in Figure 5 write without on the graph substrate with the form pointwise that separates subregion, formed the substrate that is used for led chip as shown in Figure 6.Wherein, because the minimum unit of three-dimensional manometer hierarchic structure scala media halfpace face is square, the square pencil of forms spot of 100nmx100nm so incide without the bundle spot of the UV laser beam on the graph substrate, by parameters such as the control frequency of UV laser beam or times, prepare the different ladder degree of depth at each coordinate place, wherein, the time of staying at the 4th grade of laser that the ladder depth is corresponding is the longest, shortens successively in the time of staying of the 3rd level ladder degree of depth, the 2nd grade of ladder degree of depth and the 1st grade of laser that the ladder depth is corresponding.
[the second embodiment]
The utility model the second embodiment provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.
The second embodiment is on the basis of the first embodiment, and difference is that in step S13, λ is 525nm, and three-dimensional manometer hierarchic structure is that 4 rank are approximate, namely has 4 grades of ladders, and wherein M is that 2, N is 4.The 1st grade of ladder degree of depth is
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth difference of the 4th grade of ladder:
In the present embodiment, among the step S14, because the degree of depth that laser writes is different from the degree of depth that the laser of the first embodiment writes, so ultraviolet laser is corresponding changing of the time of staying at each ladder place.
[the 3rd embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.The 3rd embodiment is on the basis of the first embodiment, difference is, the preparation method of step S14 is multiexposure, multiple exposure single lithographic technique, wherein, the thickness of photoresist is greater than the ladder degree of depth of the three-dimensional manometer hierarchic structure after changing in proportion, and described ratio is the etching selection ratio of the material of described photoresist and described substrate.
At first, on without graph substrate, apply equably the thick positive photoresist of one deck 1um.
Then, photoresist is exposed.Because in the present embodiment, the etching selection ratio of photoresist and saphire substrate material is 2: 1, so after the ladder degree of depth of the normalized emulation three-dimensional manometer of step S13 hierarchic structure is amplified 2 times, transfer on the photoresist by the form of four exposures.Wherein, it is the local printing opacity of 465nm that the used reticle of exposing for the first time only has the ladder degree of depth, and all the other places are light tight; It is that 465nm and the ladder degree of depth are the local printing opacity of 349nm that the used reticle of exposing for the second time only has the ladder degree of depth, and all the other places are light tight; It is the local light tight of 116nm and 0nm (datum level of ladder) that the used reticle of exposing for the third time only has the ladder degree of depth, all the other local all printing opacities; It is the local light tight of 0nm that the 4th the used reticle of exposure only has the ladder degree of depth, all the other local all printing opacities.The time of four exposures is identical.
At last, to carrying out a step etching without graph substrate after the exposure, produce the substrate that is used for led chip as shown in Figure 6.
[the 4th embodiment]
The utility model the 4th embodiment provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.The 4th embodiment is on the basis of the 3rd embodiment, because green glow is different from the wavelength of blue light, difference is that in step S13, λ is 525nm, and emulation three-dimensional manometer hierarchic structure is that 4 rank are approximate, namely has 4 grades of ladders, and wherein M is that 2, N is 4.The degree of depth of the 1st grade of ladder is
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
In step S14, on without graph substrate, apply equably the thick positive photoresist of one deck 1.1um.It is the local printing opacity of 525nm that the used reticle of exposing for the first time only has the ladder degree of depth, and all the other places are light tight; It is that 525nm and the ladder degree of depth are the local printing opacity of 394nm that the used reticle of exposing for the second time only has the ladder degree of depth, and all the other places are light tight; It is the local light tight of 131nm and 0nm that the used reticle of exposing for the third time only has the ladder degree of depth, all the other local all printing opacities; It is the local light tight of 0nm that the 4th the used reticle of exposure only has the ladder degree of depth, all the other local all printing opacities.
At last, to carrying out a step etching without graph substrate after the exposure, produce the substrate that is used for led chip as shown in Figure 6.
[the 5th embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.The 5th embodiment is on the basis of the first embodiment, and difference is that the preparation method of step S14 is multiexposure, multiple exposure multiple etching technology.
Step a applies the thick positive photoresist of one deck 0.4um equably on without graph substrate;
Step b, adopting reticle is the place exposure of 465nm to the ladder degree of depth, do not expose in all the other places;
Step c, to the exposure after without graph substrate carry out one the step etching;
Steps d, repeating step a, step b, step c three times, with different photolithography plates the ladder degree of depth is the place exposure of 465nm and 349nm, is that the place of 116nm and 0nm is not exposed, is not expose and etching in the place of 0nm to the ladder degree of depth to the ladder degree of depth respectively, produce the substrate that is used for led chip as shown in Figure 6.
[the 6th embodiment]
The utility model the 6th embodiment provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.The 6th embodiment is on the basis of the 5th embodiment, because green glow is different from the wavelength of blue light, difference is that in step S13, λ is 525nm, and emulation three-dimensional manometer hierarchic structure is that 4 rank are approximate, namely has 4 grades of ladders, and wherein M is that 2, N is 4.The degree of depth of the 1st grade of ladder is
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
In step S14, step a applies the thick positive photoresist of one deck 0.4um equably on without graph substrate;
Step b, adopting reticle is the place exposure of 525nm to the ladder degree of depth, do not expose in all the other places;
Step c, to the exposure after without graph substrate carry out one the step etching;
Steps d, repeating step a, step b, step c three times, with different photolithography plates the ladder degree of depth is the place exposure of 525nm and 394nm, is that the place of 131nm and 0nm is not exposed, is not expose and etching in the place of 0nm to the ladder degree of depth to the ladder degree of depth respectively, produce the substrate that is used for led chip as shown in Figure 6.
[the 7th embodiment]
Present embodiment provides a kind of and is applied to based on the substrate that excites blue light (wavelength is 465nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.The 7th embodiment is on the basis of the first embodiment, and difference is that the preparation method of step S14 is single exposure single lithographic technique.
Step 1), on without graph substrate, evenly apply the thick positive photoresist of one deck 1um.
Step 2), make the reticle with gamma characteristic, this reticle is different in diverse location place light transmission.Wherein, being place corresponding to 465nm 100% printing opacity in the ladder degree of depth, is place corresponding to 349nm 75% printing opacity in the ladder degree of depth, is place corresponding to 232nm 50% printing opacity in the ladder degree of depth, be place corresponding to 116nm 25% printing opacity in the ladder degree of depth, all the other places are light tight.
Step 3), with step 2) in reticle to step 1) in evenly the positive photoresist of coating expose, form three-dimensional manometer hierarchic structure at photoresist.
Step 4), to step 3) in the coating photoresist that forms carry out etching without graph substrate, the three-dimensional manometer hierarchic structure on the photoresist is copied to without on the graph substrate, produce the substrate that is used for led chip as shown in Figure 6.
[the 8th embodiment]
The 8th year embodiment of the utility model provides a kind of and is applied to based on the substrate that excites green glow (wavelength is 525nm) led chip, and the material of the extension luminescent layer of this led chip is gallium nitride.The 8th embodiment is on the basis of the 7th embodiment, because green glow is different from the wavelength of blue light, difference is that in step S13, λ is 525nm, and three-dimensional manometer hierarchic structure is that 4 rank are approximate, namely has 4 grades of ladders, and wherein M is that 2, N is 4.The degree of depth of the 1st grade of ladder is
The degree of depth of the 2nd grade of ladder is:
The degree of depth of 3rd level ladder is:
The degree of depth of the 4th grade of ladder is:
In step S14, step 1), on without graph substrate, evenly apply the thick positive photoresist of one deck 1um;
Step 2), make the reticle with gamma characteristic, this reticle is different in diverse location place light transmission.Wherein, being place corresponding to 525nm 100% printing opacity in the ladder degree of depth, is place corresponding to 394nm 75% printing opacity in the ladder degree of depth, is place corresponding to 263nm 50% printing opacity in the ladder degree of depth, be place corresponding to 131nm 25% printing opacity in the ladder degree of depth, all the other places are light tight.
Step 3), with step 2) in reticle to step 1) in evenly the positive photoresist of coating expose, form three-dimensional manometer hierarchic structure at photoresist.
Step 4), to step 3) in the coating photoresist that forms carry out etching without graph substrate, the three-dimensional manometer hierarchic structure on the photoresist is copied to without on the graph substrate, produce the substrate that is used for led chip as shown in Figure 6.
The utility model provides a kind of substrate for led chip to be not limited to above-described embodiment, as the three-dimensional manometer hierarchic structure with the distribution of control reflective phase is not limited to above-mentioned preparation method, so long as have the substrate of three-dimensional manometer hierarchic structure, and this substrate can utilize the theoretical control of diffraction of light reflective phase to distribute, not to calculate with computer such as three-dimensional manometer hierarchic structure, also within thought range of the present utility model; The preparation method who is used for the substrate of led chip is not limited to above-described embodiment, as adopt exposure and lithographic technique the emulation three-dimensional manometer hierarchic structure that designs is prepared into as described in without each subregion of graph substrate on the time, can also use secondary photoresist, be that the prepared ladder degree of depth is opposite.
In sum, the utility model provides a kind of substrate for led chip, the substrate that should be used for led chip comprises main body, be used for the three-dimensional manometer hierarchic structure that the control reflective phase distributes, described three-dimensional manometer hierarchic structure is arranged on the described main body, and described three-dimensional manometer hierarchic structure has the ladder of some different depths.This three-dimensional manometer hierarchic structure is theoretical by the beam shaping algorithm design according to Diffraction of light wave, and obtains by normalized method, and the substrate that should be used for led chip can on purpose change catoptrical PHASE DISTRIBUTION by diffraction.Compared with prior art, the substrate that is used for led chip that the utility model provides has the following advantages:
1, the utility model provides a kind of substrate for led chip, all has the three-dimensional manometer hierarchic structure that the control reflective phase distributes on this each subregion for the substrate of led chip, compare with existing patterned substrate, pattern on the subregion provided by the utility model is not the patterning of simple repeated arrangement, but has the three-dimensional manometer hierarchic structure of the ladder of different depth in the position, the radiative light wave that this three-dimensional manometer hierarchic structure is sent mqw light emitting layer has simple scattering and diffuse reflection effect incessantly, also has diffraction.When light propagates into three-dimensional manometer hierarchic structure, this three-dimensional manometer hierarchic structure can on purpose change catoptrical PHASE DISTRIBUTION by diffraction, make through the angle of total reflection of the catoptrical angle of departure of this three-dimensional manometer hierarchic structure less than led chip, reflection luminous energy is all escaped out from the exiting surface of led chip, increase the light emission rate of led chip; This three-dimensional manometer hierarchic structure can be controlled the dispersion angle of led chip bright dipping simultaneously, improves its axial luminosity.
2, the utility model provides a kind of substrate for led chip, all has the three-dimensional manometer hierarchic structure that the control reflective phase distributes on this each subregion for the substrate of led chip, the three-dimensional manometer hierarchic structure of different subregions is identical, has the aisle between the adjacent sectors, this aisle formed before grown epitaxial layer, can reduce well the various stress between epitaxial loayer and the substrate.
3, the utility model provides a kind of substrate for led chip, should be used for the substrate of led chip applicable to the led chip manufacturing of any size, and the technology of preparation method is many, can be according to concrete needs flexible choice.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (7)
1. a substrate that is used for led chip is characterized in that, comprising:
Main body is provided with some subregions on the described main body;
All have the three-dimensional manometer hierarchic structure that distributes for the control reflective phase on each described subregion, described three-dimensional manometer hierarchic structure has the ladder of some different depths.
2. be used for the substrate of led chip such as claim 1, it is characterized in that described three-dimensional manometer hierarchic structure has N level ladder, wherein N=2
M, M is positive integer.
3. be used for the substrate of led chip such as claim 2, it is characterized in that the depth d of the Z level ladder in the described three-dimensional manometer hierarchic structure
ZFor
1≤Z≤N, Z are positive integer, and λ is wavelength.
4. the substrate that is used for led chip such as claim 1, it is characterized in that, the minimum unit of the ladder table top of described three-dimensional manometer hierarchic structure ladder is shaped as square, triangle, rectangle, regular hexagon or parallelogram, and the length of side of described minimum unit is 10nm～500nm.
5. be used for the substrate of led chip such as any one among the claim 1-4, it is characterized in that having the aisle between the adjacent described subregion.
6. be used for the substrate of led chip such as any one among the claim 1-4, it is characterized in that, described subregion be shaped as square, triangle, rectangle, hexagon or parallelogram.
7. be used for the substrate of led chip such as any one among the claim 1-4, it is characterized in that, the material of described substrate is a kind of in sapphire, carborundum or the silicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220408508 CN202712248U (en) | 2012-08-16 | 2012-08-16 | Substrate for LED chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220408508 CN202712248U (en) | 2012-08-16 | 2012-08-16 | Substrate for LED chip |
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| CN202712248U true CN202712248U (en) | 2013-01-30 |
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| CN 201220408508 Expired - Fee Related CN202712248U (en) | 2012-08-16 | 2012-08-16 | Substrate for LED chip |
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| CN (1) | CN202712248U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790151A (en) * | 2012-08-16 | 2012-11-21 | 杭州士兰明芯科技有限公司 | Substrate for LED (Light Emitting Diode) chip and preparation method thereof |
| CN111133592A (en) * | 2017-07-14 | 2020-05-08 | 旭硝子欧洲玻璃公司 | Light emitting device with anti-reflective silicon carbide or sapphire substrate and method of forming the same |
-
2012
- 2012-08-16 CN CN 201220408508 patent/CN202712248U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790151A (en) * | 2012-08-16 | 2012-11-21 | 杭州士兰明芯科技有限公司 | Substrate for LED (Light Emitting Diode) chip and preparation method thereof |
| CN102790151B (en) * | 2012-08-16 | 2015-01-21 | 杭州士兰明芯科技有限公司 | Substrate for LED (Light Emitting Diode) chip and preparation method thereof |
| CN111133592A (en) * | 2017-07-14 | 2020-05-08 | 旭硝子欧洲玻璃公司 | Light emitting device with anti-reflective silicon carbide or sapphire substrate and method of forming the same |
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