CN102789965B - The method of wafer control slice recycling - Google Patents
The method of wafer control slice recycling Download PDFInfo
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- CN102789965B CN102789965B CN201110126352.8A CN201110126352A CN102789965B CN 102789965 B CN102789965 B CN 102789965B CN 201110126352 A CN201110126352 A CN 201110126352A CN 102789965 B CN102789965 B CN 102789965B
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- wafer control
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Abstract
The method that The embodiment provides the recycling of a kind of wafer control slice, including: providing sharp used wafer control slice, the used wafer control slice surface of described profit is formed with epitaxial layer；Remove described epitaxial layer；After removing described epitaxial layer, form the protective layer covering described wafer control slice under cryogenic；Remove described protective layer, form new wafer control slice.The method of the wafer control slice recycling of the embodiment of the present invention, wafer control slice can reuse repeatedly, reduces the cost of semiconductor device manufacturer.
Description
Technical field
The present invention relates to field of semiconductor manufacture, the method particularly relating to the recycling of a kind of wafer control slice.
Background technology
Semiconductor device is formed on the surface of wafer, and along with developing rapidly of semiconductor fabrication, the demand for wafer also grows with each passing day.Owing to wafer is to be drawn by silica sand to form, its manufacture process is considerably complicated, length consuming time, and therefore the cost of wafer is high.
In prior art, when forming semiconductor device, it is necessary at crystal column surface through multiple processing steps.If it is improper that the adjustment of any of processing step controls, then can make the semiconductor device formed that quality problems occur, cause scrapping of wafer.Therefore, in actual production line, whenever each parameter adjustment of a processing step completes, can adopt this processing step that wafer control slice (monitorwafer) is tested, analyze after testing and confirm that this processing step can properly form semiconductor device.Such as, before being deposited technique, film thickness and uniform degree for making deposition meets the requirement of semiconductor device, or whether produced granule is in allowed band in depositing operation, first can deposit described thin film on wafer control slice, to be confirmed correct after just thin film is formed and is being actually subjected on the wafer for manufacturing semiconductor device.
But, owing to semiconductor device is significantly high for the requirement of wafer control slice, wafer control slice of the prior art is only capable of using once.Therefore, for the manufacturer of semiconductor device, the wafer control slice of prior art relatively costly.
Publication number is the application documents of " CN1466170A "; disclose a kind of reusable wafer control slice and forming method thereof; adopt and form two-layer protective layer, the method removing described two-layer protective layer subsequently on wafer control slice surface, reach the purpose of Reusability wafer control slice.But this kind of method formation process is complicated.
Summary of the invention
The problem that embodiments of the invention solve is to provide a kind of method that can reuse wafer control slice.
For solving the problems referred to above, embodiment of the invention discloses that a kind of method that wafer control slice reuses, including:
Thering is provided sharp used wafer control slice, the used wafer control slice surface of described profit is formed with epitaxial layer；
Remove described epitaxial layer；
After removing described epitaxial layer, adopt low temperature oxidation technology to aoxidize the used wafer control slice surface of described profit and form protective layer；
Remove described protective layer, form new wafer control slice.
Alternatively, the temperature of described low-temperature oxidation growth technique is 300～600 DEG C, and the gas passed into is O2。
Alternatively, the gas passed in described low-temperature oxidation growth technique also includes H2。
Alternatively, the material of described protective layer is silicon dioxide.
Alternatively, the thickness of described protective layer is
Alternatively, the material of described epitaxial layer is one or more combinations in Si, SiGe, SiGeB, SiC.
Alternatively, the method for the described epitaxial layer of described removal is chemically mechanical polishing, and the ground slurry that described chemically mechanical polishing adopts includes silicon dioxide and oxidant, and the polishing speed of described chemically mechanical polishing is 50～100 revs/min.
Alternatively, the method for the described protective layer of described removal is wet etching.
Alternatively, the chemical reagent that described wet etching adopts is hydrofluoric acid solution, in described hydrofluoric acid solution HF: H2The ratio of O is 1: 500～1: 100.
Compared with prior art, embodiments of the invention have the advantage that
The embodiment of the present invention first adopts the method for chemically mechanical polishing to remove the epitaxial layer on sharp used wafer control slice surface; then under cryogenic; oxide film is formed as protective layer in the used wafer control slice of described profit; owing to being carry out under cryogenic; the thickness uniformity of described oxide film; the stress on wafer control slice surface is reached unanimity, is damaged from the new wafer control slice being subsequently formed.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the method for the wafer control slice recycling of the embodiment of the present invention；
Fig. 2～Fig. 5 is the process schematic of the cross-section structure of the method for the wafer control slice recycling of one embodiment of the invention.
Detailed description of the invention
By background technology it can be seen that namely existing wafer control slice went out of use after using once, substantially increase the cost of semiconductor device manufacturer, cause the waste of resource.
The inventor of the embodiment of the present invention, in order to reduce the cost of semiconductor device manufacturer, then considers to reclaim sharp used wafer control slice, carries out some PROCESS FOR TREATMENT so that described wafer control slice returns to the former state that is utilized.After further investigation, inventor have found that of the embodiment of the present invention, adopt the epitaxial layer removing sharp used wafer control slice surface, in wafer control slice, then form oxide film, the method finally removing oxide film, it is possible to reach the purpose of recycling wafer control slice.If but in the process forming oxide film, there are some rough defects in the in uneven thickness or oxide film of oxide film, the different parts of wafer control slice can be produced different stress by described oxide film, described different stress then influences whether the quality of the new wafer control slice being subsequently formed, wafer control slice is even made to crack, thus scrapping.
The inventor of the embodiment of the present invention finds after further research, the thickness uniformity of the oxide film formed under cryogenic, the oxide film of described thickness uniformity is equal to the stress at each position of wafer control slice, does not interfere with the quality being subsequently formed new wafer control slice.
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Elaborate a lot of detail in the following description so that fully understanding the present invention.But the present invention can implement being much different from alternate manner described here, and those skilled in the art can do similar popularization when without prejudice to intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Secondly, the present invention utilizes schematic diagram to be described in detail, when describing the embodiment of the present invention in detail; for ease of explanation; representing that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.Additionally, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Refer to Fig. 1, the method that The embodiment provides the recycling of a kind of wafer control slice, including:
Step S101, it is provided that sharp used wafer control slice, the used wafer control slice surface of described profit is formed with epitaxial layer；
Step S103, removes described epitaxial layer；
Step S105, after removing described epitaxial layer, adopts low temperature oxidation technology to aoxidize the used wafer control slice surface of described profit and forms protective layer；
Step S107, removes described protective layer, forms new wafer control slice.
It follows that in conjunction with specific embodiments, the method that the wafer control slice of the embodiment of the present invention is reused is described further.Fig. 2～Fig. 5 illustrates the process schematic of the cross-section structure of the method for the wafer control slice recycling of the embodiment of the present invention.
Performing step S101, refer to Fig. 2, it is provided that sharp used wafer control slice 200, described profit used wafer control slice 200 surface is formed with epitaxial layer 201.
The used wafer control slice 200 of described profit refers to: in the production process of semiconductor device, in order to monitor each processing step, wafer control slice after the parameters of each processing step has been debugged, after adopting this processing step that wafer control slice (monitorwafer) is tested.Such as, in an embodiment of the present invention, whether the parameters in order to test a certain chemical vapor deposition method selects appropriate, after these parameter testings complete, for ensureing the quality of the semiconductor device being subsequently formed, need to adopt these technological parameters in wafer control slice surface deposit epitaxial layers, then detect the quality of described epitaxial layer, thickness etc..Described surface deposition has the wafer control slice of epitaxial layer to be sharp used wafer control slice 200.
Described epitaxial layer 201 is formed on described profit used wafer control slice 200 surface；Described epitaxial layer 201 is the structure of one or more layers storehouse；The material of described epitaxial layer 201 is one or more combinations in Si, SiGe, SiGeB, SiC；The formation process of described epitaxial layer 201 includes one or more combinations in depositing operation, ion implantation technology, etch process.
In an embodiment of the present invention, the formation process of described epitaxial layer 201 is chemical vapor deposition method, and described epitaxial layer 201 is SiGe film.
Perform step S103, refer to Fig. 3, remove described epitaxial layer.
Remove the method that method is chemically mechanical polishing of described epitaxial layer.In an embodiment of the present invention, the ground slurry that epitaxial layer described in chemically mechanical polishing adopts includes silicon dioxide and oxidant；The polishing speed of described chemically mechanical polishing is 50～100 revs/min.
When having removed described epitaxial layer, after exposing the used wafer control slice surface of described profit, stop chemically mechanical polishing.
Perform step S105, refer to Fig. 4, after removing described epitaxial layer, adopt low temperature oxidation technology oxidation described profit used wafer control slice 200 surface to form protective layer 203.
When considering to produce semiconductor device, the prescription of the new wafer control slice for being formed is higher, after simple chemically mechanical polishing, described profit used wafer control slice 200 surface there is also some cuts or other defect (not shown), for instance deforms upon or formed haze defect (haze) etc..Again due to monitoring wafer control slice its surface is existed granule, haze defect, and the deformation degree of the new wafer control slice formed has certain requirement, the wafer control slice after described chemically mechanical polishing can not directly as new test wafer control slice.Therefore also need to the used wafer control slice of described profit 200 is made further PROCESS FOR TREATMENT, in the used wafer control slice 200 of described profit, form protective layer 203, for the defect on the described profit of follow-up removal used wafer control slice 200 surface.
The inventor of the embodiment of the present invention finds after research; adopt in the used wafer control slice 200 of described profit, form protective layer 203; then the method removing described protective layer 203, it is possible to eliminate the cut in described profit used wafer control slice 200 surface or other defect.And when the thickness uniformity of protective layer 203, the surfacing of described protective layer 203, protective layer 203 is equal for the stress at sharp used each position of wafer control slice 201, and the new wafer control slice quality being subsequently formed is better；When protective layer 203 in uneven thickness; the surface irregularity of described protective layer 203; protective layer 203 is different for the stress at sharp used each position of wafer control slice 201; easily crack in sharp used wafer control slice 201 so that the second-rate of new wafer control slice being subsequently formed even is scrapped.
The inventor of the embodiment of the present invention finds after further research; the thickness uniformity of the protective layer 203 formed under cryogenic, and when temperature is higher, the protective layer 203 of formation in uneven thickness; also can there is some other defect, for instance surface irregularity etc..Therefore, described protective layer 203 is formed under cryogenic, it is possible to the new wafer control slice quality making to be subsequently formed is better.
In an embodiment of the present invention, the formation process of described protective layer 203 is low-temperature oxidation growth technique, and the material of described protective layer 203 is silicon dioxide.Specifically: the temperature forming described protective layer 203 is 300～600 DEG C, the gas passed into is O2。
It should be noted that in other embodiments of the invention, the gas passed into during described low-temperature oxidation growth technique can also include H2, to improve the growth rate of oxide film.
And consider that can the thickness of protective layer 203 relevant with the time on the surface that effectively repair wafer control slice and the described protective layer of follow-up removal 203; the inventor of the embodiment of the present invention; after experiment repeatedly find, when described protective layer 203 thickness less thanTime, subsequent process can not be removed defect in the used wafer control slice 200 of described profit completely, for instance cut, can there are some problems in the new wafer control slice surface being therefore subsequently formed, for instance cut, it is impossible to meet the requirement of monitoring wafer control slice；When the thickness of described protective layer 203 is too big, more thanTime, then the overlong time of follow-up removal protective layer 203, it is unfavorable for improving production efficiency.Therefore, the thickness of usual described protective layer 203 isIn an embodiment of the present invention, the thickness of described protective layer 203 is
Perform step S107, refer to Fig. 5, remove described protective layer, form new wafer control slice 210.
Consider that the requirement of new wafer control slice 210 surface quality of monitoring is higher, remove described protective layer and adopt isotropic wet etching.
The chemical reagent that described wet etching adopts is hydrofluoric acid solution, in described hydrofluoric acid solution HF: H2The ratio of O is 1: 500～1: 100.In order to remove protective layer completely, described wet etching is over etching, namely after removing described protective layer, also should continue to etch a part of wafer control slice, and the time of described wet etching is at least 1.5 times that remove protective layer required time.In an embodiment of the present invention, HF: H is adopted2The ratio of O is the hydrofluoric acid solution of 1: 200, removes thickness and isProtective layer need 10 minutes, for ensure remove described protective layer completely, therefore the time of wet etching is at least 15 minutes.
After above-mentioned steps has performed, defining new wafer control slice, the number of the granule (particle) on the surface of described new wafer control slice is less than 20, and described granule refers to diameter more than the impurity of 0.12um, dust etc.；And the haze defect on the surface of described new wafer control slice is less than 0.1；And the radius of curvature deformed upon of described new wafer control slice is less than 10um, it is possible to meet the requirement of monitoring wafer control slice.
To sum up, the embodiment of the present invention first adopts the method for chemically mechanical polishing to remove the epitaxial layer on sharp used wafer control slice surface, then under cryogenic, oxide film is formed on described wafer control slice surface, owing to being carry out under cryogenic, the thickness uniformity of described oxide film, reaches unanimity to the stress on wafer control slice surface, is damaged from the new wafer control slice being subsequently formed.
Although the present invention is with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art are without departing from the spirit and scope of the present invention; may be by the method for the disclosure above and technology contents and technical solution of the present invention is made possible variation and amendment; therefore; every content without departing from technical solution of the present invention; according to any simple modification, equivalent variations and modification that above example is made by the technical spirit of the present invention, belong to the protection domain of technical solution of the present invention.
Claims (8)
1. a method for wafer control slice recycling, including:
Thering is provided sharp used wafer control slice, the used wafer control slice surface of described profit is formed with epitaxial layer；
It is characterized in that, also include:
Removing described epitaxial layer, the method for the described epitaxial layer of described removal is chemically mechanical polishing；
Removing after described epitaxial layer, adopting low-temperature oxidation growth technique to aoxidize the used wafer control slice surface of described profit and form protective layer, the temperature of described low-temperature oxidation growth technique is 300～600 DEG C, the thickness of described protective layer more than or equal toThe thickness of described protective layer less than or equal to
Remove described protective layer, form new wafer control slice.
2. the method for wafer control slice recycling as claimed in claim 1, it is characterised in that the gas that described low-temperature oxidation growth technique passes into is O2。
3. the method for wafer control slice recycling as claimed in claim 2, it is characterised in that the gas passed in described low-temperature oxidation growth technique also includes H2。
4. the method for wafer control slice recycling as claimed in claim 1, it is characterised in that the material of described protective layer is silicon dioxide.
5. the method for wafer control slice recycling as claimed in claim 1, it is characterised in that the material of described epitaxial layer is one or more combinations in Si, SiGe, SiGeB, SiC.
6. the method for wafer control slice recycling as claimed in claim 1, it is characterised in that the ground slurry that described chemically mechanical polishing adopts includes silicon dioxide and oxidant, and the polishing speed of described chemically mechanical polishing is 50～100 revs/min.
7. the method for wafer control slice recycling as claimed in claim 1, it is characterised in that the method for the described protective layer of described removal is wet etching.
8. the method for wafer control slice recycling as claimed in claim 7, it is characterised in that the chemical reagent that described wet etching adopts is hydrofluoric acid solution, HF:H in described hydrofluoric acid solution2The ratio of O is 1:500～1:100.
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| CN104900494B (en) * | 2015-05-20 | 2017-07-07 | 中国航天科技集团公司第九研究院第七七一研究所 | A kind of high accuracy epitaxial film thickness monitoring piece and preparation method thereof |
| CN105679692A (en) * | 2016-03-24 | 2016-06-15 | 上海华力微电子有限公司 | Method for monitoring measurement process of film thickness machine |
| CN108257885B (en) * | 2016-12-28 | 2021-01-05 | 无锡华润上华科技有限公司 | Use method of titanium or titanium nitride particle control wafer in physical vapor deposition |
| CN109166812B (en) * | 2018-08-31 | 2021-07-02 | 上海华力微电子有限公司 | Control wafer and manufacturing method thereof and monitoring method of chemical mechanical polishing defects |
| CN113838743A (en) * | 2020-06-08 | 2021-12-24 | 长鑫存储技术有限公司 | Auxiliary wafer, preparation method thereof and semiconductor process |
| CN111725053B (en) * | 2020-06-30 | 2023-11-14 | 安徽长飞先进半导体有限公司 | Protection method for silicon carbide wafer corrosion |
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| CN101312111A (en) * | 2007-05-21 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning and recovery method |
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| JP3668033B2 (en) * | 1999-02-23 | 2005-07-06 | 濱田重工株式会社 | Silicon wafer processing method |
| JP2010109151A (en) * | 2008-10-30 | 2010-05-13 | Takashi Yunogami | Method for recycling of used semiconductor wafer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1466170A (en) * | 2002-06-04 | 2004-01-07 | 中芯国际集成电路制造(上海)有限公司 | Repeatedly usable unpatterned wafer and forming method thereof |
| CN1412820A (en) * | 2002-11-25 | 2003-04-23 | 中芯国际集成电路制造(上海)有限公司 | Method for recovering ion injection doping dose monitoring sheet |
| CN101312111A (en) * | 2007-05-21 | 2008-11-26 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning and recovery method |
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