CN104900494B - A kind of high accuracy epitaxial film thickness monitoring piece and preparation method thereof - Google Patents
A kind of high accuracy epitaxial film thickness monitoring piece and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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Abstract
The invention discloses a kind of high accuracy epitaxial film thickness monitoring piece and preparation method thereof, the surface to used wafer is processed, and makes its surface that naked silicon state is presented；Cleaning；To cleaned be lightly doped wafer carry out treatment make its growth oxide layer；Carry out N-type or p type impurity injection；Carry out high-temperature process；It is surface-treated, makes its surface that naked silicon state is presented；Cleaned, that is, obtained epitaxial film thickness monitoring piece.The surface dopant concentration uniformity of film thickness monitoring piece prepared by the present invention is far superior to the heavy doping substrate slice that CZ methods make, increased the accuracy of examination stove thickness result, enable monitored results actual response board state of the art, the inaccurate loss of material for causing due to monitoring piece monitored results is at utmost reduced, production capacity reduction and Product Process parameter are exceeded.
Description
Technical field
The invention belongs to technical field of manufacturing semiconductors, and in particular to a kind of high accuracy epitaxial film thickness monitoring piece and its preparation
Method.
Background technology
Common extension is individual layer epitaxial structure (as shown in Figure 1), if desired for accurate measurement epitaxial thickness, is then needed low-mix
Miscellaneous epitaxial layer deposition is measured on the substrate wafer piece of high-dopant concentration using infrared external reflection e measurement technology.It is infrared anti-
E measurement technology is penetrated to reach good measurement, it is desirable to which the resistivity of high concentration substrate layer should be less than 0.02 Ω cm, and this is due to it
Measuring mechanism be by infrared light IR by inciding silicon epitaxy surface after Michelson interferometer, by IR respectively in extension table
The analytical calculation epitaxy layer thickness of the interference pattern that the reflected light of face and substrate surface is formed.The epitaxial layer being lightly doped is for wavelength
It is transparent that infrared spectrum in 2.5 to 50 μ ms is relative, but the substrate of heavy doping plays for radiating within this range
The effect of reflecting surface, therefore infrared external reflection technology can be used to determine the thickness of epitaxial layer.
In general epitaxial monocrystalline silicon production line, epitaxy technique board generally requires to enter using a certain class heavy doping wafer
The assessment of row epitaxy machine platform state, this kind of wafer is referred to as monitoring piece, and the engineer for being responsible for epitaxy machine platform is exactly by monitoring
Piece judges whether board can proceed production.
Epitaxial film thickness monitoring piece uses heavy doping wafer, because the doping of such wafer is usually when CZ legal systems make crystal bar
The doping for carrying out, the doping concentration uniformity of disk surfaces is typically difficult to accomplish very well.The doping concentration on monitoring piece surface is present
Difference is bigger, and epitaxial thickness measures accurate surely by influenceed will be bigger.Assuming that same epitaxial thickness, high-dopant concentration
The data that surface measures can be smaller than the data that relative low doping concentration surface measures, and this phenomenon can be with the rising of deposition temperature
And it is serious all the more.The least ideally thick position substrate of the position substrate surface concentration ratio deposited film of deposited film thickness
Surface concentration is higher, and this will cause the data for measuring to be differed greatly with the state of the art of reality.That is, surface impurity concentration
Lack of homogeneity influences whether the accuracy of infrared external reflection measurement, has influence on judgement of the engineer to current board state, causes to produce
Product yield can not be controlled effectively.
The content of the invention
It is above-mentioned existing to overcome it is an object of the invention to provide a kind of high accuracy epitaxial film thickness monitoring piece and preparation method thereof
The surface dopant concentration uniformity of the film thickness monitoring piece prepared with the presence of the defect of technology, the present invention is far superior to what CZ methods made
Heavy doping substrate slice, increased the accuracy of examination stove thickness result, enable monitored results actual response board state of the art, most
Big degree reduction is due to the inaccurate loss of material for causing of monitoring piece monitored results, and production capacity reduction and Product Process parameter are super
Mark.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
A kind of preparation method of high accuracy epitaxial film thickness monitoring piece, comprises the following steps：
Step one：Surface to used wafer is processed, and makes its surface that naked silicon state is presented, when used
When wafer surface is naked silicon state, then surface treatment is not required to；
Step 2：Surface is cleaned in the wafer of naked silicon state；
Step 3：Wafer to being cleaned through step 2 carries out N-type or p type impurity injection；
Step 4：The wafer that N-type or p type impurity are injected in step 3 is carried out into high-temperature process；
Step 5：The wafer that step 4 is obtained is surface-treated, makes its surface that naked silicon state is presented；
Step 6：The wafer that step 5 is obtained is cleaned, that is, is obtained epitaxial film thickness monitoring piece.
Further, the used wafer described in step one is used thickness of oxidation film monitoring piece, silicon nitride
One kind in film thickness monitoring piece, epitaxial film thickness monitoring piece or electrical resistivity of epitaxy monitoring piece.
Further, the cleaning process in step 2 and step 6 is：First at 110~120 DEG C, using volume ratio
It is 3:1~5:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 3~7 minutes, then with deionized water rinsing 5~10 minutes；Then in room
It is 10 using volume ratio under temperature:1~50:1 hydrofluoric acid/deionized water mixed liquid dipping 20~60 seconds, then rushed with deionized water
Wash 5~10 minutes；It is 1 using volume ratio most after at 60~80 DEG C:1:5~1:2:10 ammoniacal liquor/hydrogen peroxide/deionized water
Mixed liquid dipping 5~10 minutes, then dried with after deionized water rinsing 5~10 minutes.
Further, also had the following steps between the step 2 and step 3：The wafer that step 2 was cleaned is entered
Row treatment makes its growth oxide layer, wherein oxide layer be under the atmosphere of dry oxygen or wet oxygen, in normal pressure, 750 DEG C~1150 DEG C
At a temperature of generate, oxidization time is 10~60 minutes, when dry oxygen is passed through, dry oxygen flow is 8~16slm, when being passed through wet oxygen
When, oxygen and the flow-rate ratio of hydrogen are 1 in wet oxygen:1~1:1.68；Step 3 is to carry out N-type to the wafer by this step
Or p type impurity injection.
Further, the wafer for being cleaned to step 2 carries out treatment makes its growth thickness beOxygen
Change layer.
Further, Implantation Energy when N-type or p type impurity injection are carried out in step 3 is 50kev~150kev, injection
It is 2.5E15~7.5E15 to measure.
Further, the temperature range of step 4 high temperature treatment is 1150~1250 DEG C.
Further, wafer surface is processed using pure hydrofluoric acid in step one and step 5, makes its surface
Naked silicon state is presented.
A kind of preparation method of high accuracy epitaxial film thickness monitoring piece, comprises the following steps：
Selection boron-doping,<100>Crystal orientation, resistivity is 0.1~100ohmcm, is used as thickness of oxidation film monitoring piece
Wafer, on wafer growth have 1000 angstroms of oxide layers；
Step one：Using pure hydrofluoric acid to surface as the used wafer of thickness of oxidation film monitoring piece at
Reason, makes its surface that naked silicon state is presented；
Step 2：The surface obtained to step one is cleaned in the wafer of naked silicon state：First at 120 DEG C, using body
Product is than being 5:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 5 minutes, then with deionized water rinsing 5 minutes；Then at room temperature, utilize
Volume ratio is 10:1 hydrofluoric acid/deionized water mixed liquid dipping 20 seconds, then with deionized water rinsing 5 minutes；Most after 60 DEG C
Under, it is 1 using volume ratio:2:10 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 5 minutes, then with deionized water rinsing 5
Dried after minute；
The wafer cleaned to step 2 carries out treatment makes its growth oxide layer, and wherein oxide layer is in dry oxygen ambient
Under, being generated at a temperature of normal pressure, 850 DEG C, oxidization time is 40 minutes, wherein the flow for being passed through dry oxygen is 16slm, makes life
Into the thickness of oxide layer be；
Step 3：Wafer to being processed through step 2 carries out N-type impurity injection, wherein, implanted dopant is antimony, injects energy
It is 75kev to measure, and injection rate is 3.2E15；
Step 4：The wafer that N-type stilba matter is injected in step 3 is carried out into high-temperature process at a temperature of 1250 DEG C；
Step 5：The wafer that step 4 is obtained is surface-treated using pure hydrofluoric acid, makes its surface that naked silicon is presented
State；
Step 6：The wafer that step 5 is obtained is cleaned：First at 120 DEG C, using 5:1 sulfuric acid/dioxygen
Water mixed liquid soaks 5 minutes, then with deionized water rinsing 5 minutes；Then at room temperature, using 10:1 hydrofluoric acid/deionization
Water mixed liquid soaks 20 seconds, then with deionized water rinsing 5 minutes；Most after at 120 DEG C, using 1:2:10 ammoniacal liquor/hydrogen peroxide/
Deionized water mixed liquid dipping 5 minutes, then dried with after deionized water rinsing 5 minutes, that is, obtain N-type epitaxial film thickness monitoring piece.
A kind of high accuracy epitaxial film thickness monitoring piece obtained using above-mentioned preparation method.
Compared with prior art, the present invention has following beneficial technique effect：
Film thickness monitoring piece prepared by the present invention, it is possible to achieve the monitoring of epitaxial film thickness.Substrate can make other purposes
Used wafer, can be substantially reduced as the cost of wafer for preparing source.By what is prepared to the present invention
Epitaxial film thickness monitoring piece does sheet resistance test, and sheet resistance is tested uniformity within 3%, illustrates that surface dopant concentration has good uniformity,
It is right to be carried out using the film thickness monitoring piece that conventional epitaxial monitors the Ω cm wafers of sheet type 0.008~0.02 with prepared by the present invention
Than finding that the data of the film thickness monitoring built-in testing of preparation are closer with product actual (real) thickness, especially uniformity data, conventional film
The uniformity data of thickness monitoring built-in testing is poor just to be made because monitoring piece surface impurity concentration lack of homogeneity in itself, prepared by the present invention
Disk due to surface concentration be that, by injecting precise control, therefore uniformity is preferably, the present invention most can accurately monitor outer
Prolong the state of stove, farthest lifting production capacity and optimize technique, prevent because product is abnormal and production capacity drops caused by monitoring piece
It is low.
Brief description of the drawings
Fig. 1 is common individual layer epitaxial structure；
Fig. 2 is the sheet resistance test data of monitoring piece prepared by the present invention；
Fig. 3 is the thickness Data Comparison figure of monitoring piece prepared by the present invention and conventional monitoring piece；
Fig. 4 is first group of thickness Data Comparison figure of monitoring piece prepared by the present invention and conventional monitoring piece；
Fig. 5 is second group of thickness Data Comparison figure of monitoring piece prepared by the present invention and conventional monitoring piece；
Fig. 6 is the 3rd group of thickness Data Comparison figure of monitoring piece prepared by the present invention and conventional monitoring piece.
Specific embodiment
The present invention is described in further detail below：
Step one：Using pure hydrofluoric acid to used wafer (thickness of oxidation film monitoring piece, silicon nitride thickness monitoring piece,
Epitaxial film thickness monitoring piece or electrical resistivity of epitaxy monitoring piece, wherein the surface of used epitaxial film thickness monitoring piece is naked silicon shape
State, then be not required to surface treatment) surface processed, make its surface that naked silicon state is presented；
Step 2：The surface obtained to step one is cleaned in the wafer of naked silicon state：It is sharp first at 110~120 DEG C
It is 3 with volume ratio:1~5:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 3~7 minutes, then with deionized water rinsing 5~10 minutes；
Then at room temperature, it is 10 using volume ratio:1~50:1 hydrofluoric acid/deionized water mixed liquid dipping 20~60 seconds, then spend
Ionized water is rinsed 5~10 minutes；It is 1 using volume ratio most after at 60~80 DEG C:1:5~1:2:10 ammoniacal liquor/hydrogen peroxide/
Deionized water mixed liquid dipping 5~10 minutes, then dried with after deionized water rinsing 5~10 minutes；
The wafer cleaned to step 2 carries out treatment makes its growth oxide layer, and wherein oxide layer is in dry oxygen or wet oxygen
Atmosphere under, generated at a temperature of normal pressure, 750 DEG C~1150 DEG C, oxidization time is 10~60 minutes, when being passed through dry oxygen
When, dry oxygen flow is 8~16slm, and when wet oxygen is passed through, oxygen and the flow-rate ratio of hydrogen are 1 in wet oxygen:1~1:1.68, and it is raw
Into the thickness of oxide layer be；
Step 3：Wafer to grown oxide layer carries out N-type or p type impurity injection, wherein, Implantation Energy is
50kev~150kev, injection rate is 2.5E15~7.5E15；
Step 4：The wafer that N-type or p type impurity are injected in step 3 is carried out into height at a temperature of 1150~1250 DEG C
Temperature treatment；
Step 5：The wafer that step 4 is obtained is surface-treated using pure hydrofluoric acid, makes its surface that naked silicon is presented
State；
Step 6：The wafer that step 5 is obtained is cleaned：It is 3 using volume ratio first at 110~120 DEG C:
1~5:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 3~7 minutes, then with deionized water rinsing 5~10 minutes；Then at room temperature,
It is 10 using volume ratio:1~50:1 hydrofluoric acid/deionized water mixed liquid dipping 20~60 seconds, then with deionized water rinsing 5~
10 minutes；It is 1 using volume ratio most after at 60~80 DEG C:1:5~1:2:10 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquor
Immersion 5~10 minutes, then with drying after deionized water rinsing 5~10 minutes；Obtain epitaxial film thickness monitoring piece.
Implementation process of the invention is described in further detail with reference to embodiment：
Embodiment 1
Selection boron-doping,<100>Crystal orientation, resistivity is 0.1~100ohmcm, is used as thickness of oxidation film monitoring piece
Wafer, on wafer growth have 1000 angstroms of oxide layers；
Step one：Using pure hydrofluoric acid to surface as the used wafer of thickness of oxidation film monitoring piece at
Reason, makes its surface that naked silicon state is presented；
Step 2：The surface obtained to step one is cleaned in the wafer of naked silicon state：First at 120 DEG C, using body
Product is than being 5:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 5 minutes, then with deionized water rinsing 5 minutes；Then at room temperature, utilize
Volume ratio is 10:1 hydrofluoric acid/deionized water mixed liquid dipping 20 seconds, then with deionized water rinsing 5 minutes；Most after 60 DEG C
Under, it is 1 using volume ratio:2:10 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 5 minutes, then with deionized water rinsing 5
Dried after minute；
The wafer cleaned to step 2 carries out treatment makes its growth oxide layer, and wherein oxide layer is in dry oxygen ambient
Under, being generated at a temperature of normal pressure, 850 DEG C, oxidization time is 40 minutes, wherein the flow for being passed through dry oxygen is 16slm, makes life
Into the thickness of oxide layer be；
Step 3：Wafer to being processed through step 2 carries out N-type impurity injection, wherein, implanted dopant is antimony, injects energy
It is 75kev to measure, and injection rate is 3.2E15；
Step 4：The wafer that N-type stilba matter is injected in step 3 is carried out into high-temperature process at a temperature of 1250 DEG C；
Step 5：The wafer that step 4 is obtained is surface-treated using pure hydrofluoric acid, makes its surface that naked silicon is presented
State；
Step 6：The wafer that step 5 is obtained is cleaned：First at 120 DEG C, using 5:1 sulfuric acid/dioxygen
Water mixed liquid soaks 5 minutes, then with deionized water rinsing 5 minutes；Then at room temperature, using 10:1 hydrofluoric acid/deionization
Water mixed liquid soaks 20 seconds, then with deionized water rinsing 5 minutes；Most after at 120 DEG C, using 1:2:10 ammoniacal liquor/hydrogen peroxide/
Deionized water mixed liquid dipping 5 minutes, then dried with after deionized water rinsing 5 minutes, that is, obtain N-type epitaxial film thickness monitoring piece.
Embodiment 2
Selection boron-doping,<111>Crystal orientation, resistivity is the used as epitaxial film thickness monitoring piece of 8~13ohmcm
Wafer, growth has 11 micron of 3.2 N-type extension of Ω ﹒ cm on wafer；
Step one：It has been naked silicon state as the surface of the used wafer of epitaxial film thickness monitoring piece, has been not required to table
Face is processed；
Step 2：Above-mentioned wafer is cleaned：It is 3 using volume ratio first at 110 DEG C:1 sulfuric acid/hydrogen peroxide is mixed
Immersion is closed to steep 3 minutes, then with deionized water rinsing 7 minutes；Then at room temperature, it is 50 using volume ratio:1 hydrofluoric acid/go
Ionized water mixed liquid dipping 60 seconds, then with deionized water rinsing 10 minutes；It is 1 using volume ratio most after at 80 DEG C:1:5
Ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 10 minutes, then dried with after deionized water rinsing 10 minutes；
The wafer cleaned to step 2 carries out treatment makes its growth oxide layer, and wherein oxide layer is in dry oxygen ambient
Under, being generated at a temperature of normal pressure, 750 DEG C, oxidization time is 10 minutes, wherein the flow for being passed through dry oxygen is 8slm, makes life
Into the thickness of oxide layer be；
Step 3：Wafer to being processed through step 2 carries out N-type impurity injection, wherein, implanted dopant is antimony, injects energy
It is 50kev to measure, and injection rate is 7.5E15；
Step 4：The wafer that N-type stilba matter is injected in step 3 is carried out into high-temperature process at a temperature of 1200 DEG C；
Step 5：The wafer that step 4 is obtained is surface-treated using pure hydrofluoric acid, makes its surface that naked silicon is presented
State；
Step 6：The wafer that step 5 is obtained is cleaned：It is 3 using volume ratio first at 110 DEG C:1 sulphur
Acid/hydrogen peroxide mixed liquid dipping 3 minutes, then with deionized water rinsing 7 minutes；Then at room temperature, it is 50 using volume ratio:1
Hydrofluoric acid/deionized water mixed liquid dipping 60 seconds, then with deionized water rinsing 10 minutes；Most after at 80 DEG C, using volume
Than being 1:1:5 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 5 minutes, then dried with after deionized water rinsing 5 minutes, i.e.,
Obtain N-type epitaxial film thickness monitoring piece.
Embodiment 3
Selection p-doped,<100>Crystal orientation, resistivity is 4~7ohmcm as the wafer of silicon nitride thickness monitoring piece
Piece, growth has 1500 angstroms of silicon nitrides on wafer；
Step one：Using pure hydrofluoric acid to being processed as the surface of the wafer of silicon nitride thickness monitoring piece, make
Its surface is presented naked silicon state；
Step 2：The surface obtained to step one is cleaned in the wafer of naked silicon state：First at 115 DEG C, using body
Product is than being 4:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 7 minutes, then with deionized water rinsing 10 minutes；Then at room temperature, profit
It is 30 with volume ratio:1 hydrofluoric acid/deionized water mixed liquid dipping 40 seconds, then with deionized water rinsing 8 minutes；Most after 70
It is 3 using volume ratio at DEG C:4:20 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 7 minutes, then use deionized water rinsing
Dried after 7 minutes；
The wafer cleaned to step 2 carries out treatment makes its growth oxide layer, and wherein oxide layer is in wet oxygen atmosphere
Under, being generated at a temperature of normal pressure, 1150 DEG C, oxidization time is 60 minutes, the flow-rate ratio of oxygen and hydrogen wherein in wet oxygen
It is 1:1~1:1.68, and the thickness of oxide layer of generation is；
Step 3：Wafer to being processed through step 2 carries out p type impurity injection, wherein, implanted dopant is boron, injects energy
It is 150kev to measure, and injection rate is 2.5E15；
Step 4：The wafer of implanting p-type boron impurity in step 3 is carried out into high-temperature process at a temperature of 1150 DEG C；
Step 5：The wafer that step 4 is obtained is surface-treated using pure hydrofluoric acid, makes its surface that naked silicon is presented
State；
Step 6：The wafer that step 5 is obtained is cleaned：It is 4 using volume ratio first at 115 DEG C:1 sulphur
Acid/hydrogen peroxide mixed liquid dipping 7 minutes, then with deionized water rinsing 10 minutes；Then at room temperature, it is 30 using volume ratio:1
Hydrofluoric acid/deionized water mixed liquid dipping 40 seconds, then with deionized water rinsing 8 minutes；Most after at 70 DEG C, using volume ratio
It is 3:4:20 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 7 minutes, then dried with after deionized water rinsing 7 minutes；I.e.
Obtain N-type epitaxial film thickness monitoring piece.
Claims (8)
1. a kind of preparation method of high accuracy epitaxial film thickness monitoring piece, it is characterised in that comprise the following steps：
Step one：Surface to used wafer is processed, and makes its surface that naked silicon state is presented, when used wafer
When piece surface is naked silicon state, then surface treatment is not required to；
Step 2：Surface is cleaned in the wafer of naked silicon state；
Step 3：Wafer to being cleaned through step 2 carries out N-type or p type impurity injection；
Step 4：The wafer that N-type or p type impurity are injected in step 3 is carried out into high-temperature process；
Step 5：The wafer that step 4 is obtained is surface-treated, makes its surface that naked silicon state is presented；
Step 6：The wafer that step 5 is obtained is cleaned, that is, is obtained epitaxial film thickness monitoring piece；
Cleaning process in step 2 and step 6 is：It is 3 using volume ratio first at 110~120 DEG C:1~5:1
Sulfuric acid/hydrogen peroxide mixed liquid dipping 3~7 minutes, then with deionized water rinsing 5~10 minutes；Then at room temperature, using volume
Than being 10:1~50:1 hydrofluoric acid/deionized water mixed liquid dipping 20~60 seconds, then with deionized water rinsing 5~10 minutes；
It is 1 using volume ratio most after at 60~80 DEG C:1:5~1:2:10 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 5~
10 minutes, then dried with after deionized water rinsing 5~10 minutes；
Also had the following steps between the step 2 and step 3：The wafer cleaned to step 2 carries out treatment grows it
Oxide layer, wherein oxide layer are under the atmosphere of dry oxygen or wet oxygen, to be generated at a temperature of normal pressure, 750 DEG C~1150 DEG C, oxygen
The change time be 10~60 minutes, when dry oxygen is passed through, dry oxygen flow be 8~16slm, when wet oxygen is passed through, in wet oxygen oxygen with
The flow-rate ratio of hydrogen is 1:1~1:1.68；Step 3 is that N-type or p type impurity injection are carried out to the wafer by this step.
2. a kind of preparation method of high accuracy epitaxial film thickness monitoring piece according to claim 1, it is characterised in that step one
Described in used wafer for used thickness of oxidation film monitoring piece, silicon nitride thickness monitoring piece, epitaxial film thickness monitoring
One kind in piece or electrical resistivity of epitaxy monitoring piece.
3. the preparation method of a kind of high accuracy epitaxial film thickness monitoring piece according to claim 1, it is characterised in that to step
Two wafers for cleaning carry out treatment makes its growth thickness beOxide layer.
4. a kind of preparation method of high accuracy epitaxial film thickness monitoring piece according to claim 1, it is characterised in that step 3
In the Implantation Energy that carries out when N-type or p type impurity inject be 50kev~150kev, injection rate is 2.5E15~7.5E15.
5. a kind of preparation method of high accuracy epitaxial film thickness monitoring piece according to claim 1, it is characterised in that step 4
The temperature range of high temperature treatment is 1150~1250 DEG C.
6. a kind of preparation method of high accuracy epitaxial film thickness monitoring piece according to claim 1, it is characterised in that step one
Wafer surface is processed using pure hydrofluoric acid with step 5, makes its surface that naked silicon state is presented.
7. a kind of preparation method of high accuracy epitaxial film thickness monitoring piece, it is characterised in that comprise the following steps：
Selection boron-doping,<100>Crystal orientation, resistivity is 0.1~100ohmcm, as the used crystalline substance of thickness of oxidation film monitoring piece
Disk, growth has 1000 angstroms of oxide layers on wafer；
Step one：Using pure hydrofluoric acid to being processed as the surface of the used wafer of thickness of oxidation film monitoring piece, make
Its surface is presented naked silicon state；
Step 2：The surface obtained to step one is cleaned in the wafer of naked silicon state：First at 120 DEG C, using volume ratio
It is 5:1 sulfuric acid/hydrogen peroxide mixed liquid dipping 5 minutes, then with deionized water rinsing 5 minutes；Then at room temperature, using volume
Than being 10:1 hydrofluoric acid/deionized water mixed liquid dipping 20 seconds, then with deionized water rinsing 5 minutes；It is sharp most after at 60 DEG C
It is 1 with volume ratio:2:10 ammoniacal liquor/hydrogen peroxide/deionized water mixed liquid dipping 5 minutes, then with after deionized water rinsing 5 minutes
Dry；
The wafer cleaned to step 2 carry out treatment make its growth oxide layer, wherein oxide layer be under dry oxygen ambient, in
Normal pressure, generate at a temperature of 850 DEG C, oxidization time is 40 minutes, wherein the flow for being passed through dry oxygen is 16slm, make generation
The thickness of oxide layer is
Step 3：Wafer to being processed through step 2 carries out N-type impurity injection, wherein, implanted dopant is antimony, and Implantation Energy is
75kev, injection rate is 3.2E15；
Step 4：The wafer that N-type stilba matter is injected in step 3 is carried out into high-temperature process at a temperature of 1250 DEG C；
Step 5：The wafer that step 4 is obtained is surface-treated using pure hydrofluoric acid, makes its surface that naked silicon state is presented；
Step 6：The wafer that step 5 is obtained is cleaned：First at 120 DEG C, using 5:1 sulfuric acid/hydrogen peroxide is mixed
Immersion is closed to steep 5 minutes, then with deionized water rinsing 5 minutes；Then at room temperature, using 10:1 hydrofluoric acid/deionized water is mixed
Immersion is closed to steep 20 seconds, then with deionized water rinsing 5 minutes；Most after at 120 DEG C, using 1:2:10 ammoniacal liquor/hydrogen peroxide/go from
Sub- water mixed liquid soaks 5 minutes, then with drying after deionized water rinsing 5 minutes, that is, obtains N-type epitaxial film thickness monitoring piece.
8. a kind of high accuracy epitaxial film thickness monitoring piece, it is characterised in that high-precision as described in any one of claim 1~7 is outside one's consideration
The preparation method for prolonging film thickness monitoring piece is obtained.
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Effective date of registration: 20181205 Address after: 710000 No. 26 Information Avenue, Xi'an High-tech Zone, Shaanxi Province Patentee after: Xi'an Xiyue Electronics Technology Co. Ltd. Address before: 710068 No. 198 Taibai South Road, Xi'an City, Shaanxi Province Patentee before: No. 771 Institute of The No. 9 Research Institute, CASC |