CN102786023A - Cover plate-free carbon nanotube device structure and manufacturing method thereof - Google Patents
Cover plate-free carbon nanotube device structure and manufacturing method thereof Download PDFInfo
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- CN102786023A CN102786023A CN2011101281742A CN201110128174A CN102786023A CN 102786023 A CN102786023 A CN 102786023A CN 2011101281742 A CN2011101281742 A CN 2011101281742A CN 201110128174 A CN201110128174 A CN 201110128174A CN 102786023 A CN102786023 A CN 102786023A
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Abstract
The invention discloses a cover plate-free carbon nanotube device structure and a manufacturing method thereof. The structure includes a (100) monocrystalline silicon substrate, carbon nanotubes and a metal electrode. On the (100) monocrystalline silicon substrate is arranged a groove with a substantially rhombic section and running over the whole (100) monocrystalline silicon substrate width. The carbon nanotubes cross over the groove and keep suspended over the groove. The metal electrode is located on two sides of the groove and separately covers the parts of the carbon nanotubes crossing on the two sides of the groove, so that the carbon nanotubes and the metal electrode on the two sides of the groove form electrical connection. The inventive device structure is used for carbon nanotube electronic devices and sensors. As a cover plate is obviated, the device structure manufacturing process is simple and the yield is high so that the device structure is suitable for array production.
Description
Technical field
The present invention relates to a kind of carbon nano tube device structure and preparation method thereof, relate in particular to a kind of carbon nano tube device structure of not having cover plate and preparation method thereof, be specially adapted to the manufacturing of carbon nano-tube electron device in enormous quantities and sensor.The invention belongs to nano electron device and sensor field.
Background technology
CNT is as emerging function nano material.Its detector of processing has advantages such as volume is little, low in energy consumption, sensitivity height.Aspect infrared acquisition, calendar year 2001, people such as Xu Jianmin growth of vertical on porous alumina formwork has realized the detection to infrared light in the array of multi-walled carbon nanotubes of substrate, but device making technics is complicated, poor controllability.2006, human single wall carbon nano-tube films such as MikhailE.Itkis realized infrared acquisition, but device volume were bigger as responsive unit, were difficult in enormous quantities the making, had limited range of application.2007, the method that human AFM such as Jiangbo Zhang control was placed single many walls carbon pipe between gold electrode, processed single many walls carbon pipe infrared-sensitive device, but the element manufacturing difficulty is big, is difficult to batch making.Aspect the THz detection, 2008, human electrophoresis methods such as K.Fu deposited single-wall carbon tube on gold electrode, but this structure is difficult to realize the Ohmic contact of electrode and carbon pipe, and the signal to noise ratio that device is surveyed is not high.
Given this, the present invention will provide a kind of carbon nano tube device structure that need not cover plate and preparation method thereof, be used for carbon nano-tube electron device and sensor, and it is simple to have technology, and yield rate is high, be fit to characteristics such as array.
Summary of the invention
The technical problem that the present invention will solve is to provide a kind of carbon nano tube device structure of not having cover plate and preparation method thereof.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of carbon nano tube device structure of not having cover plate comprises: (100) monocrystalline substrate, CNT and metal electrode; On said (100) monocrystalline substrate, be provided with one run through whole (100) monocrystalline substrate width the cross section be the groove of nearly rhombus; Said CNT is crossed over said groove and on said groove, is kept unsettled; Said metal electrode is positioned at said groove both sides and be covered with the part of CNT across the groove both sides respectively, makes that formation electricity is connected between the metal electrode of unsettled CNT and groove both sides.
As preferred version of the present invention, said cross section be the groove of nearly rhombus at the width of (100) monocrystalline substrate upper surface less than the maximum width in groove inside.
As preferred version of the present invention, the CNT of described leap groove is single, many horizontal arrays or many network-like structures.
As preferred version of the present invention,, comprise that said cross section is the flute surfaces of nearly rhombus, is coated with oxide layer on said (100) monocrystalline substrate surface.
The preparation method of the carbon nano tube device structure of above-mentioned no cover plate comprises the steps:
A) a slice (100) monocrystalline substrate is provided, and forms first oxide layer, make a rectangular breach that runs through whole (100) monocrystalline substrate width by lithography along its < 110>crystal orientation then on its surface;
B) etch the vertical deep groove structure of sidewall downwards along rectangular breach;
C) said (100) monocrystalline substrate is put into anisotropic etchant and corrode, up to corroding Zi stopping to obtain the groove that the cross section is nearly rhombus to (111) crystal face;
D) oxidation said (100) monocrystalline substrate comprises that on said (100) monocrystalline substrate surface said cross section is the flute surfaces of nearly rhombus, forms second oxide layer, and with said (100) monocrystalline substrate scribing;
E) on second oxide layer of said groove one side, arrange catalyst, at the auxiliary CNT that grows the said groove of leap down with the method for chemical vapor deposition (CVD) of windstream;
F) on growth has (100) monocrystalline substrate of CNT, deposit layer of metal, accomplish the making of device.
As preferred version of the present invention, in the step a), first oxidated layer thickness is 100-2000nm; The width of said rectangular breach is 5-100 μ m.
As preferred version of the present invention, in the step b), the method for using ion beam and deep reaction ion etching (DRIE) to combine etches the vertical deep groove structure of sidewall.The degree of depth of said deep groove structure is 10-200 μ m.
As preferred version of the present invention, in the step c), anisotropic etchant can be KOH or TMAH solution.
As preferred version of the present invention, in the step d), second thickness of oxide layer is 100-2000nm.
As preferred version of the present invention, in the step f), the metal thickness of deposition is 100-1000nm.
As preferred version of the present invention, in the step f), the metal of deposition can use the method for evaporation or sputter to make, and metal material can be chosen one or more in aluminium, gold, titanium, platinum, tungsten, copper.
No cover plate carbon nano tube device structure of the present invention and preparation method thereof is used for carbon nano-tube electron device and sensor, and its beneficial effect is:
1. device architecture and manufacturing process are simple, can be in enormous quantities, the low-cost manufacturing.
2. because the existence of nearly diamond-shaped cross-section groove makes that forming nature electricity in the metal deposition process cuts off, save the operation that adds cover plate, simplified technological process, improved device yield.
3. compare the operation that adds cover plate, no cover plate technology does not receive the restriction of cover plate perforate spacing (＞400 μ m), can make the short channel carbon tube device of electrode spacing littler (about 5 μ m).
Description of drawings
Fig. 1 is the carbon nano tube device structural representation of no cover plate among the embodiment.Wherein 1 is (100) monocrystalline substrate, and 2 is carbon nano pipe array, and 3 is oxide layer, and 4 is metal electrode.
Fig. 2 a is the etching channel opening sketch map along < 110>direction; Fig. 2 b is an anisotropic etch sketch map as a result.
Fig. 3 a-f is the carbon nano tube device structure fabrication schematic flow sheet of no cover plate among the embodiment.Wherein Fig. 3 a is oxidation, and Fig. 3 b is photoetching and etching, and Fig. 3 c is an anisotropic etch, and Fig. 3 d is oxidation for the second time, and Fig. 3 e is the carbon nano pipe array growth, and Fig. 3 f is a deposit metal electrodes.
The specific embodiment
Further specify practical implementation step of the present invention below in conjunction with accompanying drawing, for the accompanying drawing that makes things convenient for that illustrates is not proportionally drawn.
Present embodiment provides a kind of carbon nano tube sensor structure, can combine the infrared and THz panel detector structure as CNT with the MEMS technology.This device architecture is on the monocrystalline substrate in < 100>crystal orientation, to make, and structure is as shown in Figure 1, comprises (100) monocrystalline substrate 1, the single-wall carbon nanotube array 2 of level, oxide layer 3, metal electrode 4 four parts.Wherein, the nearly diamond-shaped cross-section groove in (100) monocrystalline substrate 1 is on the basis of dry etching deep trouth, to obtain with the anisotropic wet corrosion.The opening of groove is along < 110>crystal orientation, and the face behind the wet etching is (111) face, shown in Fig. 2 a and 2b.The single-wall carbon nanotube array 2 of level is that (100) single crystalline substrate is placed in the chemical vapor deposition (CVD) system, under the effect of catalyst, forms through the growth of apical growth pattern cross-slot.On said (100) monocrystalline substrate 1 surface, comprise that said cross section is the flute surfaces of nearly rhombus, is coated with oxide layer 3.Unsettled carbon nano-pipe array is listed in that temperature and inner carrier density change under the illumination, causes resistance to change.Metal electrode 4 is drawn carbon pipe array in the resistance variations under the illumination, obtain detectable signal.The method of electrodes use evaporation or sputter is made, because the existence of nearly diamond-shaped cross-section groove makes metal level form nature on the both sides of groove and cuts off, thereby saved the step that adds cover plate.
This device architecture preparation method is shown in Fig. 3 a-f, and is specific as follows:
1. shown in Fig. 3 a, with (100) monocrystalline substrate 10 oxidations of single-sided polishing form on its surface first oxide layer, 20, the first oxide layers, 20 thickness be 100nm to 2000nm, present embodiment is preferably 200nm.Then, coat photoresist 30 in (100) monocrystalline substrate 10 fronts, make the rectangular breach of rectangle that runs through whole (100) monocrystalline substrate 10 width along < 110>crystal orientation after the oven dry by lithography, between the 100 μ m, present embodiment is preferably 5 μ m to gap width at 5 μ m.
2. etch the vertical deep groove structure of sidewall with ion beam (Ion-beam) and deep reaction ion etching (Deep RIE) downwards along rectangular breach, shown in Fig. 3 b, between the 200 μ m, present embodiment is preferably 20 μ m to its degree of depth at 10 μ m.
3. photoresist 30 is removed; Be put into (100) monocrystalline substrate 10 in the anisotropic etchants such as KOH solution or TMAH solution and corrode, Zi stopping, obtaining the groove of the nearly rhombus in cross section to (111) face up to corrosion; Shown in Fig. 3 c, present embodiment adopts KOH solution to corrode.
4. shown in Fig. 3 d, once more with (100) monocrystalline substrate 10 oxidation 100nm to 2000nm, present embodiment is preferably 100nm, makes (100) monocrystalline substrate 10 surfaces covered by second oxide layer 20 ', and makes the grooved inner surface insulation, then substrate is divided into small pieces.
5. shown in Fig. 3 e, upward arrange catalyst 40, at the auxiliary carbon nano pipe array 50 that grows the horizontal orientation of crossing over groove down with the method for chemical vapour deposition (CVD) of windstream in the oxide layer 20 ' of said groove one side.
6. shown in Fig. 3 f, directly evaporation or sputter one layer thickness are the metal (like aluminium, gold, titanium, platinum, tungsten, copper etc.) of 100-1000nm on the long substrate that the carbon pipe arranged, and accomplish the device flow process.For example, be put in the Al evaporation equipment the thick Al of evaporation 600nm as electrode 60.Because the existence of nearly diamond-shaped cross-section groove makes the Al electrode 60 on both sides form the nature partition.
Carbon nano tube device structure of no cover plate in the present embodiment and preparation method thereof is used for the infrared and THz detector of CNT and can realizes that infrared acquisition and the THz under the low temperature under the room temperature survey.The anisotropic etch of its preparation method after through deep etching realizes that the cross section is the groove structure of nearly rhombus; And then when metal deposits, need not add cover plate and just can form cutting off naturally of metal electrode; Reduced process complexity; Avoided the destruction of cover plate, improved device yield CNT.Owing to saved cover plate, device architecture manufacturing process is simple, and yield rate is high, is fit to array production.
The foregoing description is just listed expressivity principle of the present invention and effect is described, but not is used to limit the present invention.Any personnel that are familiar with this technology all can make amendment to the foregoing description under spirit of the present invention and scope.Therefore, rights protection scope of the present invention should be listed like claims.
Claims (10)
1. a carbon nano tube device structure of not having cover plate is characterized in that, comprising: (100) monocrystalline substrate, CNT and metal electrode; On said (100) monocrystalline substrate, be provided with one run through whole (100) monocrystalline substrate width the cross section be the groove of nearly rhombus; Said CNT is crossed over said groove and on said groove, is kept unsettled; Said metal electrode is positioned at said groove both sides and be covered with the part of CNT across the groove both sides respectively, makes that formation electricity is connected between the metal electrode of unsettled CNT and groove both sides.
2. the carbon nano tube device structure of no cover plate according to claim 1 is characterized in that: said cross section be the groove of nearly rhombus at the width of (100) monocrystalline substrate upper surface less than the maximum width in groove inside.
3. the carbon nano tube device structure of no cover plate according to claim 1 is characterized in that: the CNT of described leap groove is single, many horizontal arrays or many network-like structures.
4. the carbon nano tube device structure of no cover plate according to claim 1 is characterized in that: on said (100) monocrystalline substrate surface, comprise that said cross section is the flute surfaces of nearly rhombus, is coated with oxide layer.
5. a preparation method of not having the carbon nano tube device structure of cover plate is characterized in that, may further comprise the steps:
A) a slice (100) monocrystalline substrate is provided, and forms first oxide layer, make a rectangular breach that runs through whole (100) monocrystalline substrate width by lithography along its < 110>crystal orientation then on its surface;
B) etch the vertical deep groove structure of sidewall downwards along rectangular breach;
C) said (100) monocrystalline substrate is put into anisotropic etchant and corrode, up to corroding Zi stopping to obtain the groove that the cross section is nearly rhombus to (111) crystal face;
D) oxidation said (100) monocrystalline substrate comprises that on said (100) monocrystalline substrate surface said cross section is the flute surfaces of nearly rhombus, forms second oxide layer, and with said (100) monocrystalline substrate scribing;
E) on second oxide layer of said groove one side, arrange catalyst, at the auxiliary CNT that grows the said groove of leap down with the method for chemical vapor deposition (CVD) of windstream;
F) on growth has (100) monocrystalline substrate of CNT, deposit layer of metal, accomplish the making of device.
6. the preparation method of the carbon nano tube device structure of no cover plate according to claim 1, it is characterized in that: in the step a), the width of said rectangular breach is 5-100 μ m.
7. the preparation method of the carbon nano tube device structure of no cover plate according to claim 1 is characterized in that: in the step b), the method for using ion beam and deep reaction ion etching (DRIE) to combine etches the vertical deep groove structure of sidewall.
8. the preparation method of the carbon nano tube device structure of no cover plate according to claim 1, it is characterized in that: in the step b), the degree of depth of said deep groove structure is 10-200 μ m.
9. the preparation method of the carbon nano tube device structure of no cover plate according to claim 1, it is characterized in that: in the step c), anisotropic etchant can be KOH or TMAH solution.
10. the preparation method of the carbon nano tube device structure of no cover plate according to claim 1; It is characterized in that: in the step f); The metal of deposition uses the method for evaporation or sputter to make, and metal material is chosen one or more in aluminium, gold, titanium, platinum, tungsten, copper.
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Cited By (2)
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| US10340459B2 (en) | 2016-03-22 | 2019-07-02 | International Business Machines Corporation | Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes |
| CN110683508A (en) * | 2019-10-18 | 2020-01-14 | 北京元芯碳基集成电路研究院 | Preparation method of carbon nano tube parallel array |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US10340459B2 (en) | 2016-03-22 | 2019-07-02 | International Business Machines Corporation | Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes |
| DE112017000209B4 (en) | 2016-03-22 | 2021-09-30 | International Business Machines Corporation | Terahertz detection and spectroscopy with layers of homogeneous carbon nanotubes |
| CN110683508A (en) * | 2019-10-18 | 2020-01-14 | 北京元芯碳基集成电路研究院 | Preparation method of carbon nano tube parallel array |
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