CN102786023B - Cover plate-free carbon nanotube device structure and manufacturing method thereof - Google Patents
Cover plate-free carbon nanotube device structure and manufacturing method thereof Download PDFInfo
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- CN102786023B CN102786023B CN201110128174.2A CN201110128174A CN102786023B CN 102786023 B CN102786023 B CN 102786023B CN 201110128174 A CN201110128174 A CN 201110128174A CN 102786023 B CN102786023 B CN 102786023B
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Abstract
The invention discloses a cover plate-free carbon nanotube device structure and a manufacturing method thereof. The structure includes a (100) monocrystalline silicon substrate, carbon nanotubes and a metal electrode. On the (100) monocrystalline silicon substrate is arranged a groove with a substantially rhombic section and running over the whole (100) monocrystalline silicon substrate width. The carbon nanotubes cross over the groove and keep suspended over the groove. The metal electrode is located on two sides of the groove and separately covers the parts of the carbon nanotubes crossing on the two sides of the groove, so that the carbon nanotubes and the metal electrode on the two sides of the groove form electrical connection. The inventive device structure is used for carbon nanotube electronic devices and sensors. As a cover plate is obviated, the device structure manufacturing process is simple and the yield is high so that the device structure is suitable for array production.
Description
Technical field
The present invention relates to a kind of carbon nano tube device structure and preparation method thereof, particularly relate to a kind of carbon nano tube device structure without cover plate and preparation method thereof, be specially adapted to the manufacture of carbon nano-tube electron device in enormous quantities and sensor.The invention belongs to nano electron device and sensor field.
Background technology
CNT is as emerging function nano material.Its detector made has that volume is little, low in energy consumption, sensitivity advantages of higher.In infrared acquisition, calendar year 2001, the people such as Xu Jianmin growth of vertical on porous alumina formwork, in the array of multi-walled carbon nanotubes of substrate, achieves the detection to infrared light, but device making technics is complicated, poor controllability.2006, the people such as MikhailE.Itkis as responsive unit, achieve infrared acquisition, but device volume were comparatively large, not easily makes in enormous quantities, limits range of application with single wall carbon nano-tube film.2007, the people such as Jiangbo Zhang placed single many walls carbon pipe by the method that AFM manipulates between gold electrode, have made single many walls carbon pipe infrared-sensitive device, but element manufacturing difficulty is large, is difficult to batch making.In THz detection, 2008, the people such as K.Fu deposited single-wall carbon tube with electrophoresis method on gold electrode, but this structure is difficult to the Ohmic contact realizing electrode and carbon pipe, and the signal to noise ratio of device detection is not high.
Given this, the present invention is by providing a kind of carbon nano tube device structure without the need to cover plate and preparation method thereof, and for carbon nano-tube electron device and sensor, have technique simple, yield rate is high, is applicable to the features such as array.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of carbon nano tube device structure without cover plate and preparation method thereof.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
Without a carbon nano tube device structure for cover plate, comprising: (100) monocrystalline substrate, CNT and metal electrode; Described (100) monocrystalline substrate is provided with the groove that a cross section running through whole (100) monocrystalline substrate width is nearly rhombus; Described CNT is crossed over described groove and keep unsettled on described groove; Described metal electrode is positioned at described groove both sides be covered with the part of CNT across groove both sides respectively, makes to form electricity between the metal electrode of unsettled CNT and groove both sides and is connected.
As preferred version of the present invention, described cross section is that the groove of nearly rhombus is less than the maximum width of trench interiors at the width of (100) monocrystalline substrate upper surface.
As preferred version of the present invention, the CNT of described leap groove is single, many horizontal arrays or many network-like structures.
As preferred version of the present invention, on described (100) monocrystalline substrate surface, comprise the flute surfaces that described cross section is nearly rhombus, be coated with oxide layer.
The preparation method of the above-mentioned carbon nano tube device structure without cover plate, comprises the steps:
A) a slice (100) monocrystalline substrate is provided, and form the first oxide layer on its surface, then make along its <110> crystal orientation the rectangular breach that runs through whole (100) monocrystalline substrate width by lithography;
B) deep groove structure of sidewalls vertical is etched downwards along rectangular breach;
C) described (100) monocrystalline substrate is put into anisotropic etchant to corrode, until etch-stop is to (111) crystal face, obtain the groove that cross section is nearly rhombus;
D) described (100) monocrystalline substrate of oxidation, comprises on described (100) monocrystalline substrate surface the flute surfaces that described cross section is nearly rhombus, forms the second oxide layer, and by described (100) monocrystalline substrate scribing;
E) in the second oxide layer of described groove side, arrange catalyst, grow in the method for the auxiliary lower chemical vapour deposition (CVD) (CVD) of windstream the CNT crossing over described groove;
F) have in (100) monocrystalline substrate of CNT deposit layer of metal in growth, complete the making of device.
As preferred version of the present invention, step a) in, the first oxidated layer thickness is 100-2000nm; The width of described rectangular breach is 5-100 μm.
As preferred version of the present invention, step b) in, the method using ion beam and deep reaction ion etching (DRIE) to combine etches the deep groove structure of sidewalls vertical.The degree of depth of described deep groove structure is 10-200 μm.
As preferred version of the present invention, step c) in, anisotropic etchant can be KOH or TMAH solution.
As preferred version of the present invention, steps d) in, the thickness of the second oxide layer is 100-2000nm.
As preferred version of the present invention, step f) in, the metal thickness of deposition is 100-1000nm.
As preferred version of the present invention, step f) in, the metal of deposition can use the method for evaporation or sputtering to make, metal material can choose in aluminium, gold, titanium, platinum, tungsten, copper one or more.
Of the present invention without cover plate carbon nano tube device structure and preparation method thereof, in carbon nano-tube electron device and sensor, its beneficial effect is:
1. device architecture and manufacturing process are simple, can in enormous quantities, low cost manufacture.
2., because the existence of nearly diamond-shaped cross-section groove makes to form nature electricity partition in metal deposition process, eliminate the operation adding cover plate, simplify technological process, improve device yield.
3. compare the operation adding cover plate, without cover plate technique not by the restriction of cover plate perforate spacing (> 400 μm), the short channel carbon tube device of electrode spacing less (about 5 μm) can be made.
Accompanying drawing explanation
Fig. 1 is the carbon nano tube device structural representation without cover plate in embodiment.Wherein 1 is (100) monocrystalline substrate, and 2 is carbon nano pipe array, and 3 is oxide layer, and 4 is metal electrode.
Fig. 2 a is the etching groove opening schematic diagram along <110> direction; Fig. 2 b is anisotropic etch result schematic diagram.
Fig. 3 a-f is the carbon nano tube device structure fabrication schematic flow sheet without cover plate in embodiment.Wherein Fig. 3 a is oxidation, and Fig. 3 b is photoetching and etching, and Fig. 3 c is anisotropic etch, and Fig. 3 d is second time oxidation, and Fig. 3 e is carbon nano pipe array growth, and Fig. 3 f is deposit metal electrodes.
Detailed description of the invention
Specific embodiment of the invention step is further illustrated, in order to the accompanying drawing that facilitates illustrated proportionally is not drawn below in conjunction with accompanying drawing.
The present embodiment provides a kind of carbon nano tube sensor structure, can be combined as the infrared and THz panel detector structure of CNT with MEMS technology.This device architecture makes in the monocrystalline substrate in <100> crystal orientation, structure as shown in Figure 1, comprises (100) monocrystalline substrate 1, the single-wall carbon nanotube array 2 of level, oxide layer 3, metal electrode 4 four part.Wherein, the nearly diamond-shaped cross-section groove in (100) monocrystalline substrate 1 obtains with anisotropic wet corrosion on the basis of dry etching deep trouth.The opening of groove is along <110> crystal orientation, and the face after wet etching is (111) face, as shown in figures 2 a and 2b.The single-wall carbon nanotube array 2 of level is placed in chemical vapour deposition (CVD) (CVD) system by (100) single crystalline substrate, formed under the effect of catalyst by the growth of apical growth pattern cross-slot.On described (100) monocrystalline substrate 1 surface, comprise the flute surfaces that described cross section is nearly rhombus, be coated with oxide layer 3.Unsettled carbon nano pipe array under light illumination temperature and inner carrier density changes, and causes resistance to change.Array carbon nanotube resistance variations is under light illumination drawn by metal electrode 4, obtains detectable signal.Electrode adopts the method for evaporation or sputtering to make, and due to the existence of nearly diamond-shaped cross-section groove, makes metal level form nature on the both sides of groove and cuts off, thus eliminate the step adding cover plate.
This device architecture preparation method is as shown in Fig. 3 a-f, specific as follows:
1. as shown in Figure 3 a, (100) monocrystalline substrate 10 of single-sided polishing being oxidized and forming the first oxide layer 20, first oxide layer 20 thickness on its surface is 100nm to 2000nm, and the present embodiment is preferably 200nm.Then, photoresist 30 is coated in (100) monocrystalline substrate 10 front, the rectangular slat breach along running through of <110> crystal orientation whole (100) monocrystalline substrate 10 width is made by lithography after oven dry, gap width is between 5 μm to 100 μm, and the present embodiment is preferably 5 μm.
2. etch the deep groove structure of sidewalls vertical downwards along rectangular breach with ion beam (Ion-beam) and deep reaction ion etching (Deep RIE), as shown in Figure 3 b, its degree of depth is between 10 μm to 200 μm, and the present embodiment is preferably 20 μm.
3. photoresist 30 is removed, (100) monocrystalline substrate 10 is put in the anisotropic etchant such as KOH solution or TMAH solution and corrodes, until etch-stop is to (111) face, obtain the groove of the nearly rhombus in cross section, as shown in Figure 3 c, the present embodiment adopts KOH solution to corrode.
4. as shown in Figure 3 d, again (100) monocrystalline substrate 10 is oxidized 100nm to 2000nm, the present embodiment is preferably 100nm, and (100) monocrystalline substrate 10 surface is covered by the second oxide layer 20 ', and grooved inner surface is insulated, then substrate is divided into small pieces.
5. as shown in Figure 3 e, the oxide layer 20 ' in described groove side is upper arranges catalyst 40, grows the carbon nano pipe array 50 of the horizontal orientation crossing over groove in the method for the auxiliary lower chemical vapour deposition (CVD) of windstream.
6. as illustrated in figure 3f, there is the direct metal (as aluminium, gold, titanium, platinum, tungsten, copper etc.) evaporating or sputter that a layer thickness is 100-1000nm on the substrate of carbon pipe long, complete device flow process.Such as, be put in Al evaporation equipment and evaporate the thick Al of 600nm as electrode 60.Due to the existence of nearly diamond-shaped cross-section groove, make the Al electrode 60 on both sides form nature and cut off.
Carbon nano tube device structure without cover plate in the present embodiment and preparation method thereof, can realize the infrared acquisition under room temperature and the THz detection under low temperature in infrared and THz detector for CNT.Its preparation method realizes by the anisotropic etch after deep etching the groove structure that cross section is nearly rhombus, and then do not need when metal deposits to add the partition naturally that cover plate just can form metal electrode, reduce process complexity, avoid the destruction of cover plate to CNT, improve device yield.Owing to eliminating cover plate, device architecture manufacturing process is simple, and yield rate is high, is applicable to array and produces.
Above-described embodiment only listing property illustrates principle of the present invention and effect, but not for limiting the present invention.Any person skilled in the art person all can without departing from the spirit and scope of the present invention, modify to above-described embodiment.Therefore, the scope of the present invention, should listed by claims.
Claims (10)
1., without a preparation method for the carbon nano tube device structure of cover plate, it is characterized in that, comprise the following steps:
A) a slice (100) monocrystalline substrate is provided, and form the first oxide layer on its surface, then make along its <110> crystal orientation the rectangular breach that runs through whole (100) monocrystalline substrate width by lithography;
B) deep groove structure of sidewalls vertical is etched downwards along rectangular breach;
C) described (100) monocrystalline substrate is put into anisotropic etchant to corrode, until etch-stop is to (111) crystal face, obtain the groove that cross section is nearly rhombus;
D) described (100) monocrystalline substrate of oxidation, comprises on described (100) monocrystalline substrate surface the flute surfaces that described cross section is nearly rhombus, forms the second oxide layer, and by described (100) monocrystalline substrate scribing;
E) in the second oxide layer of described groove side, arrange catalyst, grow in the method for the auxiliary lower chemical vapour deposition (CVD) (CVD) of windstream the CNT crossing over described groove;
F) have in (100) monocrystalline substrate of CNT deposit layer of metal in growth, complete the making of device.
2. the preparation method of the carbon nano tube device structure without cover plate according to claim 1, is characterized in that: step a) in, the width of described rectangular breach is 5-100 μm.
3. the preparation method of the carbon nano tube device structure without cover plate according to claim 1, it is characterized in that: step b) in, the method using ion beam and deep reaction ion etching (DRIE) to combine etches the deep groove structure of sidewalls vertical.
4. the preparation method of the carbon nano tube device structure without cover plate according to claim 1, is characterized in that: step b) in, the degree of depth of described deep groove structure is 10-200 μm.
5. the preparation method of the carbon nano tube device structure without cover plate according to claim 1, is characterized in that: step c) in, anisotropic etchant is KOH or TMAH solution.
6. the preparation method of the carbon nano tube device structure without cover plate according to claim 1, it is characterized in that: step f) in, the metal of deposition uses the method for evaporation or sputtering to make, metal material choose in aluminium, gold, titanium, platinum, tungsten, copper one or more.
7. the carbon nano tube device structure without cover plate utilizing preparation method as claimed in claim 1 to obtain, is characterized in that, comprising: (100) monocrystalline substrate, CNT and metal electrode; Described (100) monocrystalline substrate is provided with the groove that a cross section running through whole (100) monocrystalline substrate width is nearly rhombus; Described CNT is crossed over described groove and keep unsettled on described groove; Described metal electrode is positioned at described groove both sides be covered with the part of CNT across groove both sides respectively, makes to form electricity between the metal electrode of unsettled CNT and groove both sides and is connected.
8. the carbon nano tube device structure without cover plate according to claim 7, is characterized in that: described cross section is that the groove of nearly rhombus is less than the maximum width of trench interiors at the width of (100) monocrystalline substrate upper surface.
9. the carbon nano tube device structure without cover plate according to claim 7, is characterized in that: the CNT of described leap groove is single, many horizontal arrays or many network-like structures.
10. the carbon nano tube device structure without cover plate according to claim 7, is characterized in that: on described (100) monocrystalline substrate surface, comprise the flute surfaces that described cross section is nearly rhombus, be coated with oxide layer.
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| US10340459B2 (en) | 2016-03-22 | 2019-07-02 | International Business Machines Corporation | Terahertz detection and spectroscopy with films of homogeneous carbon nanotubes |
| CN110683508B (en) * | 2019-10-18 | 2023-05-23 | 北京元芯碳基集成电路研究院 | Preparation method of carbon nano tube parallel array |
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| CN1907845A (en) * | 2005-08-05 | 2007-02-07 | 鸿富锦精密工业（深圳）有限公司 | Carbon nano-tube preparation method and apparatus |
| CN101150088A (en) * | 2006-09-19 | 2008-03-26 | 北京大学 | Method for adjusting and controlling single-wall carbon nano tube axial energy belt |
| CN101148253A (en) * | 2006-09-19 | 2008-03-26 | 北京大学 | Metallicity and semiconductivity single-wall carbon nanotube synchronous separating and assembling method |
| CN101552166A (en) * | 2008-03-31 | 2009-10-07 | 国立大学法人东京大学 | Field emission devices and manufacturing method thereof |
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| US6803840B2 (en) * | 2001-03-30 | 2004-10-12 | California Institute Of Technology | Pattern-aligned carbon nanotube growth and tunable resonator apparatus |
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| CN1907845A (en) * | 2005-08-05 | 2007-02-07 | 鸿富锦精密工业（深圳）有限公司 | Carbon nano-tube preparation method and apparatus |
| CN101150088A (en) * | 2006-09-19 | 2008-03-26 | 北京大学 | Method for adjusting and controlling single-wall carbon nano tube axial energy belt |
| CN101148253A (en) * | 2006-09-19 | 2008-03-26 | 北京大学 | Metallicity and semiconductivity single-wall carbon nanotube synchronous separating and assembling method |
| CN101552166A (en) * | 2008-03-31 | 2009-10-07 | 国立大学法人东京大学 | Field emission devices and manufacturing method thereof |
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