CN102779907B - 高效异质结电池的制备方法 - Google Patents
高效异质结电池的制备方法 Download PDFInfo
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- CN102779907B CN102779907B CN201210288450.6A CN201210288450A CN102779907B CN 102779907 B CN102779907 B CN 102779907B CN 201210288450 A CN201210288450 A CN 201210288450A CN 102779907 B CN102779907 B CN 102779907B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 82
- 238000005498 polishing Methods 0.000 claims abstract description 23
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002070 nanowire Substances 0.000 claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 13
- 229910052709 silver Inorganic materials 0.000 claims abstract description 13
- 239000004332 silver Substances 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 9
- 230000007797 corrosion Effects 0.000 claims abstract description 5
- 238000005260 corrosion Methods 0.000 claims abstract description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 21
- 230000008569 process Effects 0.000 claims description 20
- 238000005406 washing Methods 0.000 claims description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 8
- 239000003513 alkali Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 6
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 6
- 238000006424 Flood reaction Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- 238000000637 aluminium metallisation Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 3
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 3
- 238000000992 sputter etching Methods 0.000 claims description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 3
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims description 3
- 210000002268 wool Anatomy 0.000 claims description 3
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 2
- 239000012466 permeate Substances 0.000 claims description 2
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- 230000031700 light absorption Effects 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract description 2
- 230000001681 protective effect Effects 0.000 abstract description 2
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- 238000001312 dry etching Methods 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000012993 chemical processing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Weting (AREA)
Abstract
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CN102779907A CN102779907A (zh) | 2012-11-14 |
CN102779907B true CN102779907B (zh) | 2015-08-19 |
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103378183A (zh) * | 2013-07-02 | 2013-10-30 | 国电光伏有限公司 | 一种双面透光纳米线织构异质结太阳能电池及其制造方法 |
CN105442049A (zh) * | 2014-09-01 | 2016-03-30 | 华北电力大学 | 一种用于单晶硅表面图案化微加工的贵金属催化化学腐蚀法 |
CN104478043B (zh) * | 2014-12-12 | 2016-09-21 | 北京天恒盛通科技发展有限公司 | 一种制备超亲水超疏油电极材料的方法 |
CN104576783B (zh) * | 2015-01-21 | 2016-08-17 | 中电投西安太阳能电力有限公司 | 基于硅纳米线三维结构的太阳能电池及其制备方法 |
CN106328769A (zh) * | 2016-10-17 | 2017-01-11 | 浙江晶科能源有限公司 | 一种单晶硅片表面的处理方法 |
CN106531850A (zh) * | 2016-12-29 | 2017-03-22 | 浙江合特光电有限公司 | 异质结电池的制备方法 |
CN107833929A (zh) * | 2017-10-13 | 2018-03-23 | 浙江昱辉阳光能源江苏有限公司 | 一种单面制绒的硅异质结电池及制造方法 |
CN111943520B (zh) * | 2020-08-12 | 2022-05-27 | 中国科学院半导体研究所 | 高雾度玻璃衬底、制备方法及薄膜太阳电池 |
CN113471337B (zh) * | 2021-07-06 | 2023-02-17 | 安徽华晟新能源科技有限公司 | 异质结太阳能电池片的制备方法 |
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JP4162447B2 (ja) * | 2001-09-28 | 2008-10-08 | 三洋電機株式会社 | 光起電力素子及び光起電力装置 |
CN101152651B (zh) * | 2006-09-28 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种陶瓷零件表面的清洗方法 |
US7968453B2 (en) * | 2006-10-12 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device, and etching apparatus |
JP2011040419A (ja) * | 2008-05-22 | 2011-02-24 | Fuji Electric Systems Co Ltd | 半導体装置の製造方法及びそのための装置 |
CN101638215B (zh) * | 2009-08-25 | 2011-11-02 | 华东师范大学 | 一种微纳间隙电极的制作方法 |
CN101787458B (zh) * | 2010-01-26 | 2011-03-30 | 南京大学 | 一种纳米多孔金的制法 |
CN102157579B (zh) * | 2010-12-09 | 2013-05-01 | 苏州大学 | 一种基于硅纳米结构的太阳能电池 |
CN102126724A (zh) * | 2011-03-31 | 2011-07-20 | 上海交通大学 | 光滑表面硅纳米线阵列的制备方法 |
CN102185035B (zh) * | 2011-05-04 | 2013-03-06 | 山东力诺太阳能电力股份有限公司 | 一种二次制绒法制备晶体硅太阳能电池的工艺 |
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Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: trina solar Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031 Tianhe Road, Tianhe PV Industrial Park, Changzhou, Jiangsu Province, No. 2 Patentee before: trina solar Ltd. |
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