CN102969392A - 一种太阳能单晶硅电池的单面抛光工艺 - Google Patents
一种太阳能单晶硅电池的单面抛光工艺 Download PDFInfo
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- CN102969392A CN102969392A CN2012103931148A CN201210393114A CN102969392A CN 102969392 A CN102969392 A CN 102969392A CN 2012103931148 A CN2012103931148 A CN 2012103931148A CN 201210393114 A CN201210393114 A CN 201210393114A CN 102969392 A CN102969392 A CN 102969392A
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- Prior art keywords
- monocrystalline silicon
- polishing
- silicon piece
- solar energy
- sided polishing
- Prior art date
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 59
- 238000007517 polishing process Methods 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 29
- 238000007650 screen-printing Methods 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000012530 fluid Substances 0.000 claims description 13
- 210000002268 wool Anatomy 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
- 239000013078 crystal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- DDXLVDQZPFLQMZ-UHFFFAOYSA-M dodecyl(trimethyl)azanium;chloride Chemical compound [Cl-].CCCCCCCCCCCC[N+](C)(C)C DDXLVDQZPFLQMZ-UHFFFAOYSA-M 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 2
- 239000002253 acid Substances 0.000 abstract description 5
- 238000005530 etching Methods 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 3
- 238000004065 wastewater treatment Methods 0.000 abstract description 3
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 239000003513 alkali Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000001455 metallic ions Chemical class 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 241000272165 Charadriidae Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (5)
Priority Applications (1)
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CN201210393114.8A CN102969392B (zh) | 2012-10-17 | 2012-10-17 | 一种太阳能单晶硅电池的单面抛光工艺 |
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CN201210393114.8A CN102969392B (zh) | 2012-10-17 | 2012-10-17 | 一种太阳能单晶硅电池的单面抛光工艺 |
Publications (2)
Publication Number | Publication Date |
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CN102969392A true CN102969392A (zh) | 2013-03-13 |
CN102969392B CN102969392B (zh) | 2015-09-16 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103178159A (zh) * | 2013-03-19 | 2013-06-26 | 江苏大学 | 一种晶体硅太阳能电池刻蚀方法 |
CN103357633A (zh) * | 2013-07-17 | 2013-10-23 | 北京四方继保自动化股份有限公司 | 一种薄膜太阳能电池玻璃基底的清洗方法 |
CN103361739A (zh) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | 一种晶硅太阳能电池生产中实施背抛光的方法 |
CN103422175A (zh) * | 2013-08-30 | 2013-12-04 | 昊诚光电(太仓)有限公司 | 太阳能电池硅片的抛光方法 |
CN103779442A (zh) * | 2014-01-08 | 2014-05-07 | 常州天合光能有限公司 | 太阳能电池硅片的抛光方法 |
CN103872183A (zh) * | 2014-04-03 | 2014-06-18 | 苏州阿特斯阳光电力科技有限公司 | 一种单面抛光方法 |
WO2015017956A1 (zh) * | 2013-08-08 | 2015-02-12 | 上海神舟新能源发展有限公司 | 太阳电池用单晶硅片单面抛光方法 |
CN107768481A (zh) * | 2017-09-19 | 2018-03-06 | 绿华能源科技(杭州)有限公司 | 一种太阳能电池片去背结及抛光方法 |
CN113903832A (zh) * | 2021-12-09 | 2022-01-07 | 绍兴拓邦电子科技有限公司 | 一种晶硅表面电池的碱抛光方法 |
Citations (5)
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JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
CN101079452A (zh) * | 2007-06-11 | 2007-11-28 | 江苏林洋新能源有限公司 | N型衬底的单面引出电极晶体硅电池及制造方法 |
CN101451046A (zh) * | 2008-12-30 | 2009-06-10 | 清华大学 | 一种用于硅晶片抛光的抛光组合物 |
CN101853897A (zh) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | 一种n型晶体硅局部铝背发射极太阳电池的制备方法 |
CN102290473A (zh) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池及制备方法 |
-
2012
- 2012-10-17 CN CN201210393114.8A patent/CN102969392B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005268665A (ja) * | 2004-03-19 | 2005-09-29 | Fujimi Inc | 研磨用組成物 |
CN101079452A (zh) * | 2007-06-11 | 2007-11-28 | 江苏林洋新能源有限公司 | N型衬底的单面引出电极晶体硅电池及制造方法 |
CN101451046A (zh) * | 2008-12-30 | 2009-06-10 | 清华大学 | 一种用于硅晶片抛光的抛光组合物 |
CN101853897A (zh) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | 一种n型晶体硅局部铝背发射极太阳电池的制备方法 |
CN102290473A (zh) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | 一种背面点接触晶体硅太阳电池及制备方法 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103178159A (zh) * | 2013-03-19 | 2013-06-26 | 江苏大学 | 一种晶体硅太阳能电池刻蚀方法 |
CN103178159B (zh) * | 2013-03-19 | 2016-05-25 | 江苏大学 | 一种晶体硅太阳能电池刻蚀方法 |
CN103361739A (zh) * | 2013-07-08 | 2013-10-23 | 浙江晶科能源有限公司 | 一种晶硅太阳能电池生产中实施背抛光的方法 |
CN103361739B (zh) * | 2013-07-08 | 2016-01-20 | 浙江晶科能源有限公司 | 一种晶硅太阳能电池生产中实施背抛光的方法 |
CN103357633A (zh) * | 2013-07-17 | 2013-10-23 | 北京四方继保自动化股份有限公司 | 一种薄膜太阳能电池玻璃基底的清洗方法 |
WO2015017956A1 (zh) * | 2013-08-08 | 2015-02-12 | 上海神舟新能源发展有限公司 | 太阳电池用单晶硅片单面抛光方法 |
CN103422175A (zh) * | 2013-08-30 | 2013-12-04 | 昊诚光电(太仓)有限公司 | 太阳能电池硅片的抛光方法 |
CN103779442A (zh) * | 2014-01-08 | 2014-05-07 | 常州天合光能有限公司 | 太阳能电池硅片的抛光方法 |
CN103872183A (zh) * | 2014-04-03 | 2014-06-18 | 苏州阿特斯阳光电力科技有限公司 | 一种单面抛光方法 |
CN103872183B (zh) * | 2014-04-03 | 2016-07-06 | 苏州阿特斯阳光电力科技有限公司 | 一种单面抛光方法 |
CN107768481A (zh) * | 2017-09-19 | 2018-03-06 | 绿华能源科技(杭州)有限公司 | 一种太阳能电池片去背结及抛光方法 |
CN113903832A (zh) * | 2021-12-09 | 2022-01-07 | 绍兴拓邦电子科技有限公司 | 一种晶硅表面电池的碱抛光方法 |
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CN102969392B (zh) | 2015-09-16 |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Single-side polishing process of solar monocrystalline silicon battery Effective date of registration: 20200708 Granted publication date: 20150916 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2020330000459 |
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Date of cancellation: 20220110 Granted publication date: 20150916 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2020330000459 |
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Effective date of registration: 20240307 Address after: 644600 Building 72, Jinrun Industrial Park, Gaoxin Community, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province Patentee after: Sichuan Dongci New Energy Technology Co.,Ltd. Country or region after: China Address before: 322118 Dongci Co., Ltd., Hengdian Industrial Zone, Dongyang City, Jinhua City, Zhejiang Province Patentee before: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Country or region before: China |
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