CN102779818A - Electrostatic protection circuit for radio-frequency identification tag - Google Patents
Electrostatic protection circuit for radio-frequency identification tag Download PDFInfo
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- CN102779818A CN102779818A CN2012102422672A CN201210242267A CN102779818A CN 102779818 A CN102779818 A CN 102779818A CN 2012102422672 A CN2012102422672 A CN 2012102422672A CN 201210242267 A CN201210242267 A CN 201210242267A CN 102779818 A CN102779818 A CN 102779818A
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Abstract
The invention discloses an electrostatic protection circuit for a radio-frequency identification tag, mainly to overcome the defects in the prior art of large floor space, large lead-in parasitic capacitance and high starting voltage. The electrostatic protection circuit comprises two parts, namely a PNP (Plug-and-Play) bipolar transistor and an integrated NPN (Negative-Positive-Negative) bipolar transistor. The integrated PNP bipolar transistor is used for discharging negative (Electronic Static Discharge) impulse; and the integrated NPN bipolar transistor is used for discharging ESD impulse. The electrostatic protection circuit has the advantages of simple structure, small area, small parasitic capacitance and low starting circuit, and can be applicable to the radio-frequency identification tag.
Description
Technical field
The invention belongs to electronic technology field, further relate to a kind of radio frequency identification (Radio Frequency Idenfication, RFID) electrostatic discharge protective circuit of label of being used for of semiconductor integrated circuit technical field.The present invention can be used for protecting the RFID label chip, also can be used for protecting the functional module of low pressure radio frequency input.
Background technology
Radio frequency identification (Radio Frequency Idenfication; RFID) be a kind of non-contacting automatic identification technology; Its principle is to utilize the transmission characteristic of radiofrequency signal and space coupling (inductance or electromagnetic coupled) or radar reflection; Realization is to being identified the automatic identification of object, and it is through the automatic recognition objective of radiofrequency signal and obtain related data.And passive ultra-high frequency REID (UHF RFID) is remote with it, high-speed and low cost has become RFID Study on Technology focus, and will become the basic technology that following information-intensive society is built.Along with the development of ic manufacturing technology, constantly dwindling of characteristic size makes that electrostatic discharge (ESD) protection ESD (Electrostatic Discharge) is also increasing to the influence of integrated circuit.According to statistics, the inefficacy of integrated circuit more than 1/3 caused by electrostatic discharge (ESD) protection ESD.In order to reduce the adverse effect of ESD to integrated circuit, improve the reliability and the performance of integrated circuit, effective method adds various esd protection circuits at IC interior exactly.
The patented technology that the Central China University of Science and Technology has " a kind of electrostatic discharge protective circuit that is applicable to radio frequency identification label chip " (patent No. ZL200720084698.5; Granted publication CN 201041676Y) disclose a kind of electrostatic discharge protective circuit that is applicable to radio frequency identification label chip, this circuit comprises voltage comparator circuit and current drain circuit.Voltage comparator circuit is used for detecting and comparing voltage value, and current drain circuit be used to release electrostatic pulse and radio frequency high tension, thereby has only just realized the effect of esd protection function and radio frequency pressure limiting with a circuit.But the deficiency that this patent exists is: the one, utilize large-sized MOS transistor and resistance, and also taken bigger chip area when introducing bigger parasitic capacitance, the 2nd, the higher occasion that is not suitable for low pressure applications of the starting resistor of circuit.
The patented technology " esd protection circuit that is used for the RFID label chip " of Chengdu intelligence metal and stone Science and Technology Ltd. application (application number 201010028142.0, application notification number CN 102136722A) discloses a kind of electrostatic discharge protective circuit of the RFID of being applicable to label chip.This esd protection circuit comprises release signal triggering module and current drain module; The signal triggering of releasing module comprises weak slowdown module and the RC Postponement module of keeping; Be connected to by the end to end each other mode of odd number inverter between the grid and source electrode of PMOS pipe; Keep slowdown module a little less than forming one, guarantee that the source electrode of PMOS in the esd discharge process is always high level; Form the action time of the response time of RC Postponement module RC circuit by N-WELL resistance and mos capacitance, guarantee that the ESD module can accurately work greater than the ESD voltage signal; The main task of current drain module is exactly the electric current under the ESD effect of releasing.But the deficiency that this circuit still exists is to have used N-WELL resistance and PIP electric capacity still to take bigger chip area.
Summary of the invention
The objective of the invention is to overcome the defective that above-mentioned prior art exists, propose a kind of electrostatic discharge protective circuit that is used for RFID tag.The present invention is in order to promote the performance of RFID tag; When the design ESD protection circuit; Adopt integrated PNP bipolar transistor and integrated npn bipolar transistor structure; Reduce the chip area that ESD protection circuit takies and the parasitic capacitance of introducing, reduced the starting resistor of ESD protection circuit.
For realizing above-mentioned purpose, the present invention includes integrated positive-negative-positive bipolar transistor and two parts of integrated npn type bipolar transistor of linking to each other through antenna port:
Integrated positive-negative-positive bipolar transistor is made up of a plurality of positive-negative-positive bipolar transistors, and the emitter of PNP bipolar transistor connects the antenna port of RFID tag, ground connection behind base stage and the collector electrode short circuit;
Integrated bipolar npn transistor npn npn is made up of a plurality of npn type bipolar transistors, and the emitter of npn bipolar transistor connects the antenna port of RFID tag, ground connection behind base stage and the collector electrode short circuit.
Compared with prior art, the present invention has the following advantages:
The first, the present invention is owing to adopt bipolar transistor structure; Overcome the deficiency of using large-sized MOS transistor, integrated resistor and integrated capacitance structure in the prior art; Make that circuit structure of the present invention is simpler; Reduced the area of circuit, reduced the parasitic capacitance that circuit is introduced, thereby made electrostatic discharge protective circuit littler the influence of RFID tag.
The second, the present invention releases to esd pulse owing to utilizing bipolar transistor to be operated in reverse active area; Avoided the scarce capacity of the esd pulse of releasing in the prior art; The shortcoming that starting resistor is high makes the present invention improve the protective capability of circuit, has reduced starting resistor.
Description of drawings
Fig. 1 is the electrical schematic diagram of circuit of the present invention;
Fig. 2 is the device architecture figure of positive-negative-positive bipolar transistor of the present invention;
Fig. 3 protects the equivalent circuit diagram of ESD negative-going pulse for the present invention;
Fig. 4 is the device architecture figure of bipolar npn transistor npn npn of the present invention;
Fig. 5 protects the electrical schematic diagram of ESD direct impulse for the present invention.
Embodiment:
With reference to the accompanying drawings the present invention is described in further detail.
With reference to Fig. 1; The present invention includes integrated positive-negative-positive bipolar transistor and two parts of integrated npn type bipolar transistor of linking to each other through antenna port ANT: integrated positive-negative-positive bipolar transistor is made up of a plurality of positive-negative-positive bipolar transistors 1; The emitter of positive-negative-positive bipolar transistor meets the antenna port ANT of RFID tag, ground connection behind base stage and the collector electrode short circuit.Integrated bipolar npn transistor npn npn is made up of a plurality of npn type bipolar transistors 2, and the emitter of npn bipolar transistor meets the antenna port ANT of RFID tag, ground connection behind base stage and the collector electrode short circuit.
With reference to Fig. 2, the device architecture of positive-negative-positive bipolar transistor of the present invention is described below:
With the collector region of P type substrate 3 (P_SUB) as the positive-negative-positive bipolar transistor, on substrate, carry out p type impurity 4 and inject the formation ohmic contact, depositing metal is as the collector electrode of positive-negative-positive bipolar transistor.On P type substrate 3 (P_SUB), carry out N trap 5 (NWELL) and inject, as the base of positive-negative-positive bipolar transistor.On N trap 5 (NWELL), carry out N type impurity 6 and inject the formation ohmic contact, depositing metal is as the base stage of positive-negative-positive bipolar transistor.Carry out the emitter region that p type impurity 7 injects as the PNP pipe in N trap 5 (NWELL) lining, depositing metal forms emitter.
With reference to Fig. 3, the equivalent circuit diagram that the present invention protects the ESD negative-going pulse is described below:
The equivalent electric circuit of protection ESD negative-going pulse comprises a positive-negative-positive bipolar transistor, two diodes, a resistance.The emitter of positive-negative-positive bipolar transistor 1 meets the antenna port ANT of RFID tag, and base stage connects the negative pole of diode 8, grounded collector.The positive pole of diode 8 connects antenna port ANT, and negative pole connects the base stage of positive-negative-positive bipolar transistor 1.Resistance 9 is the dead resistance of N trap, and an end of resistance is connected to the negative pole of diode 8, and the other end is connected to ground.The equivalent electric circuit of npn type bipolar transistor 2 when diode 10 is protection ESD negative-going pulse, the positive pole of diode 10 connects ground, and negative pole connects the antenna port ANT of RFID tag.
The present invention protects the equivalent circuit structure of ESD negative-going pulse, and is following to the principle of releasing of negative sense esd pulse:
When antenna port ANT has a negative sense transient pulse (with respect to ground), the emitter junction reversed bias voltage of positive-negative-positive bipolar transistor 1 increases, and reversed bias voltage is increased to a certain degree; Emitter junction generation avalanche multiplication effect; Produce a large amount of electron hole pairs, electronics flows into base stage, flows to ground through resistance 9.Because the current collection of positive-negative-positive bipolar transistor 1 is earth potential very; Thereby setting up a voltage difference (promptly falling the pressure drop on resistance 9) on the collector junction of PNP; In case this voltage difference is greater than the conducting voltage of collector junction, positive-negative-positive bipolar transistor 1 just gets into reverse active service area, and emitter voltage begins to rise; Transistor gets into the rollback district; Form a Low ESR discharge channel ESD transient state is discharged, the voltage on the antenna is clamped down on low rollback sustaining voltage simultaneously, punctures to avoid the oxide layer medium in the integrated circuit.The emitter junction forward conduction of npn type bipolar transistor, promptly diode 10 forward conductions form a parallel discharge passage to esd pulse, the ESD transient pulse of releasing protection late-class circuit.
With reference to Fig. 4, the device architecture of npn type bipolar transistor of the present invention is described below:
The device architecture of npn type bipolar transistor carries out p type impurity 14 and injects the formation ohmic contact with the base of P type substrate 3 (P_SUB) as npn type bipolar transistor on substrate, depositing metal is as the base stage of npn type bipolar transistor; On P type substrate 3 (P_SUB), carry out N trap 11 (NWELL) and inject, form the collector region of npn type bipolar transistor, in N trap 11 (NWELL), carry out N type impurity 12 and inject the formation ohmic contact, depositing metal is as the collector electrode of npn type bipolar transistor; On P type substrate 3 (P_SUB), carry out N type impurity 13 and inject the emitter region that forms the NPN pipe, depositing metal is as the emitter of NPN bipolar transistor.
With reference to Fig. 5, the equivalent circuit diagram that the present invention protects the ESD direct impulse is described below:
The equivalent electric circuit of protection ESD direct impulse comprises a npn type bipolar transistor, two diodes, a resistance.The emitter of npn type bipolar transistor 2 meets the antenna port ANT of RFID tag, and base stage connects the positive pole of diode 15, grounded collector.The negative pole of diode 15 connects antenna port ANT, the anodal base stage that connects positive-negative-positive bipolar transistor 2.Resistance 16 is the dead resistance of P type substrate, and an end of resistance is connected to the positive pole of diode 15, and the other end is connected to ground.The equivalent electric circuit of positive-negative-positive bipolar transistor 1 when diode 17 is protection ESD direct impulse, the negative pole of diode 17 connects ground, the antenna port ANT of anodal connection RFID tag.
The present invention protects the equivalent circuit structure of ESD direct impulse, and is following to the principle of releasing of forward esd pulse:
When antenna port has a forward transient pulse (with respect to ground), the emitter junction reversed bias voltage of npn type bipolar transistor 2 increases, and reversed bias voltage is increased to a certain degree; Emitter junction generation avalanche multiplication effect; Produce a large amount of electron hole pairs, the hole flows into base stage, flows to ground through resistance 16.Because the current collection of npn type bipolar transistor 2 is earth potential very; Thereby setting up a voltage difference (promptly falling the pressure drop on resistance 16) on the collector junction of NPN; In case this voltage difference is greater than the conducting voltage of collector junction, npn type bipolar transistor 2 just gets into reverse active service area, and emitter voltage begins to descend; Transistor gets into the rollback district; Form a Low ESR discharge channel ESD transient state is discharged, the voltage on the antenna is clamped down on low rollback sustaining voltage simultaneously, punctures to avoid the oxide layer medium in the integrated circuit.The emitter junction forward conduction of positive-negative-positive bipolar transistor, promptly diode 17 forward conductions form a parallel discharge passage to esd pulse, the ESD transient pulse of releasing protection late-class circuit.
Claims (5)
1. electrostatic discharge protective circuit that is used for RFID tag comprises: integrated positive-negative-positive bipolar transistor and two parts of integrated npn type bipolar transistor of linking to each other through antenna port:
Described integrated positive-negative-positive bipolar transistor is made up of a plurality of positive-negative-positive bipolar transistors, and the emitter of PNP bipolar transistor connects the antenna port of RFID tag, ground connection behind base stage and the collector electrode short circuit;
Described integrated bipolar npn transistor npn npn is made up of a plurality of npn type bipolar transistors, and the emitter of npn bipolar transistor connects the antenna port of RFID tag, ground connection behind base stage and the collector electrode short circuit.
2. the electrostatic discharge protective circuit that is used for RFID tag according to claim 1 is characterized in that: the number of described positive-negative-positive bipolar transistor is 1 to 10.
3. the electrostatic discharge protective circuit that is used for RFID tag according to claim 1; It is characterized in that: described positive-negative-positive bipolar transistor structure; Comprise: with the collector region of P type substrate as the positive-negative-positive bipolar transistor; On substrate, carry out p type impurity and inject the formation ohmic contact, depositing metal is as the collector electrode of positive-negative-positive bipolar transistor; On P type substrate, carry out the N trap and inject, as the base of positive-negative-positive bipolar transistor, on the N trap, carry out N type impurity and inject the formation ohmic contact, depositing metal is as the base stage of positive-negative-positive bipolar transistor; In the N trap, carry out p type impurity and inject the emitter region as the PNP pipe, depositing metal forms emitter.
4. the electrostatic discharge protective circuit that is used for RFID tag according to claim 1 is characterized in that: the number of described npn type bipolar transistor is 1 to 10.
5. the electrostatic discharge protective circuit that is used for RFID tag according to claim 1; It is characterized in that: the device architecture of described npn type bipolar transistor; Comprise: with the base of P type substrate as npn type bipolar transistor; On substrate, carry out p type impurity and inject the formation ohmic contact, depositing metal is as the base stage of npn type bipolar transistor; On P type substrate, carry out the N trap and inject, form the collector region of npn type bipolar transistor, in the N trap, carry out N type impurity and inject the formation ohmic contact, depositing metal is as the collector electrode of npn type bipolar transistor; On P type substrate, carry out N type impurity and inject the emitter region that forms the NPN pipe, depositing metal is as the emitter of NPN bipolar transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012102422672A CN102779818A (en) | 2012-07-04 | 2012-07-04 | Electrostatic protection circuit for radio-frequency identification tag |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012102422672A CN102779818A (en) | 2012-07-04 | 2012-07-04 | Electrostatic protection circuit for radio-frequency identification tag |
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| CN102779818A true CN102779818A (en) | 2012-11-14 |
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| CN2012102422672A Pending CN102779818A (en) | 2012-07-04 | 2012-07-04 | Electrostatic protection circuit for radio-frequency identification tag |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158849A (en) * | 2015-05-15 | 2016-11-23 | 美国亚德诺半导体公司 | ESD protection circuit for RF communication system |
| CN108598077A (en) * | 2018-04-17 | 2018-09-28 | 西安微电子技术研究所 | A kind of general electrostatic protection circuit towards ambipolar comparator |
| CN109219330A (en) * | 2017-07-03 | 2019-01-15 | 北京小米移动软件有限公司 | Electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007035777A2 (en) * | 2005-09-19 | 2007-03-29 | The Regents Of The University Of California | Esd protection circuits |
| CN201887449U (en) * | 2010-12-31 | 2011-06-29 | 惠州市正源微电子有限公司 | Novel ESD (electronic static discharge) protective circuit |
-
2012
- 2012-07-04 CN CN2012102422672A patent/CN102779818A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007035777A2 (en) * | 2005-09-19 | 2007-03-29 | The Regents Of The University Of California | Esd protection circuits |
| CN201887449U (en) * | 2010-12-31 | 2011-06-29 | 惠州市正源微电子有限公司 | Novel ESD (electronic static discharge) protective circuit |
Non-Patent Citations (1)
| Title |
|---|
| ALAN HASTINGS: "《The Art of Analog layout》", 24 June 2005, PRETICE HALL * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106158849A (en) * | 2015-05-15 | 2016-11-23 | 美国亚德诺半导体公司 | ESD protection circuit for RF communication system |
| CN106158849B (en) * | 2015-05-15 | 2020-04-14 | 美国亚德诺半导体公司 | Electrostatic discharge protection circuit for radio frequency communication system |
| CN109219330A (en) * | 2017-07-03 | 2019-01-15 | 北京小米移动软件有限公司 | Electronic equipment |
| CN108598077A (en) * | 2018-04-17 | 2018-09-28 | 西安微电子技术研究所 | A kind of general electrostatic protection circuit towards ambipolar comparator |
| CN108598077B (en) * | 2018-04-17 | 2020-06-23 | 西安微电子技术研究所 | Electrostatic protection circuit for bipolar comparator |
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Application publication date: 20121114 |