CN102766852B - MOCVD reactor - Google Patents
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- CN102766852B CN102766852B CN201110113928.7A CN201110113928A CN102766852B CN 102766852 B CN102766852 B CN 102766852B CN 201110113928 A CN201110113928 A CN 201110113928A CN 102766852 B CN102766852 B CN 102766852B
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Abstract
The present invention provides an MOCVD reactor, including a lid, ceilings, a deposition area and a susceptor, wherein the ceilings are under the lid, the susceptor is under the ceilings, a purge gas pipeline is arranged between the lid and the ceilings, and a pipeline extending from the above of the lid and transmitting growth gas is arranged between the ceilings and the susceptor. The MOCVD reactor is characterized in that one or more purge holes are arranged in the vertical direction of the ceilings.
Description
Technical field
The present invention relates to a kind of gas phase deposition technology, more specifically, the present invention relates to a kind of metal organic chemical vapor deposition (MOCVD) reactor.
Background technology
Metal organic chemical vapor deposition (MOCVD) is using organometallics as the source material, utilize vapor-phase reactant, or the NH3 of the organo-metallic of precursor and III family and V family, at the base material substrate surface, reacted, pass to base material substrate surface solid deposited thing.
It is relevant with the rise of LED that MOCVD extensively is concerned, and in the growth of blue-light LED chip, generally uses the MOCVD reactive system as the growth instrument.For LED, LED chip consists of the hierarchical architecture of different semiconductor materials, and these materials are placed on the circular chip of the metal organic chemical vapor deposition system of packing into.MOCVD easily controls qualities such as film coating composition, crystalline phases, can on complex-shaped base material, substrate, form uniform coated, makes MOCVD become the main coating technique of industry member.
Usually the crystal growth in the MOCVD system is all at normal pressure or the lower logical H of low pressure (10-100Torr)
2quartzy (stainless steel) reaction chamber of cold wall in carry out, underlayer temperature is 500-1200 ℃, with radio-frequency induction heating graphite, sets off (substrate base is above graphite sets off), H
2the fluid supply bubbling controlled by temperature carries metallorganics to vitellarium.Usually, the reaction source that is accurately controlled flow (is generally H in carrier gas
2perhaps N
2) carrying under pass into quartzy or stainless reaction chamber, after on substrate, surface reaction occurring, grown epitaxial layer, substrate is placed on heated setting off.After reaction, residual tail gas is swept out reaction chamber, after the exhaust gas processing device of removing particulate and toxicity, and the discharge system.
A MOCVD growth apparatus generally includes gas-operated system, reaction chamber, heating system and exhaust treatment system.Wherein, the gas-operated system comprises all valves, pump and various device and the pipeline that air-flow of controlling III family metal organic source and V family hydride source and composition thereof adopts, for accurately controlling passing into the raw-material amount that reaction chamber reacted.Reaction chamber is the core component of MOCVD growing system, as shown in Figure 1, generally includes upper cover, protective cover, sedimentary province and bottom, sedimentary province comprise set off, chamber, quartz plate, ventpipe and radio frequency film etc.The manufacturer of different MOCVD equipment is also different to the design of reaction chamber, but for fear of the existence from wall jet and turbulent flow occurs in reaction chamber, all guarantee only to exist laminar flow, thereby realize being uniformly distributed of air-flow in reaction chamber and temperature, be conducive to the Large-Area-Uniform growth.The reaction chamber of MOCVD equipment or Reaktionsofen are after repeatedly growing, and the byproduct that the Reaktionsofen inwall can deposit to be affected gas flowfield, pollute reaction environment, make and must change cleaning to the parts that deposit more byproduct.
Fig. 2 illustrates the forward and backward horizontal Reaktionsofen top board of growth.In left figure, be the protecting sheet before the crystal growth, wherein A means the spacing retaining plate, and B means quartzy protecting sheet processed, and C means pneumatic outlet.Right figure is the top board surface after the crystal growth.If the Reaktionsofen top cover does not have quartzy protecting sheet protection, reactant gases will react with stainless steel top cover on the one hand, and be deposited on top cover, cause top cover to damage; The high temperature of graphite load plate will heat stainless steel top cover on the other hand, decompose stainless steel, cause the pollution to reaction environment.So the top cover of reaction chamber needs cooling and isolates with chemical reaction zone.Known, protecting sheet can be used other high temperature material manufactures.
Solution commonly used is to change protecting sheet, and every 1-6 secondary growth (be exactly every day or every other day) will be changed, and cost is very high.Change protecting sheet and easily bring the contaminating impurity cavity into, affect the stability of crystal growth.Also having a kind of solution is by Reaktionsofen self purging method, such as high bake, passes into the corrosive gases corrosion.But high bake peels off foreign material, will again pollute Reaktionsofen.Corrosive gases is brought other impurity on the one hand into, on the other hand because of its corrodibility meeting etching apparatus, for protection equipment further increases cost.
U.S. Pat 6309465B1 discloses a kind of horizontal Reaktionsofen, as shown in Figure 3, this reaction chamber comprises outer cover with cover, setting off for one or more wafer, set off and be arranged in reactor cover, comprise the liquid inlet of a plurality of openings, the plurality of opening is over against above-mentioned wafer, these wafers are by the CVD medium, by mildly heating, the outward flange of reactor cover is arranged outlet, and this outlet is used for discharging the medium imported.Wherein, the disc of inside reactor adopts frangible quartz manufacture, by its surface coarsening, with metallic contact, partly adopts gas cooling, reduces thermal expansion stress.
U.S. Pat 2009/0064935 discloses a kind of upper and lower adjustable for height protecting sheet; as shown in Figure 4; this reactor comprises substrate; arrange a plurality of layers on substrate; also comprise chamber; chamber is arranged in inside reactor, and has heatable bottom, and protecting sheet can be adjusted to a height with the position of setting off.Under this height, conveniently pass into HCl corrosion protection plate and the growth byproduct set off, thereby reach the purpose of cleaning activity stove.
The protecting sheet that comprises the prior art scheme of above-mentioned two applications all adopts quartzy the manufacture, is difficult for processing, and frangible; Quartzy protecting sheet processed has affected the stability of crystal growth in repeatedly cleaning the process of utilizing; cleaning process easily causes quartzy corrosion simultaneously; protecting sheet can adhere to the foreign material of crystal growth byproduct after crystal growth one is taken turns; if stick not firm; can drop in Reaktionsofen, affect the crystal growth.
Summary of the invention
For overcoming above-mentioned defect of the prior art, the present invention proposes a kind of metal organic chemical vapor deposition (MOCVD) reactor.
According to a first aspect of the invention; a kind of MOCVD reactor is provided; comprise bell, protecting sheet, sedimentary province and set off; it is characterized in that; the bell below is the protecting sheet of multilayer; protecting sheet below is to set off, and arranges the pipeline that is connected with Purge gas between bell and protecting sheet, protecting sheet and set off between arrange, pipeline that be connected with growth gasses that extend from the bell top.
According to another aspect of the present invention; a kind of MOCVD reactor is provided; comprise bell, protecting sheet, sedimentary province and set off; the bell below is protecting sheet; protecting sheet below is to set off, and arranges the pipeline that is connected with Purge gas between bell and protecting sheet, protecting sheet and set off between arrange, pipeline that be connected with growth gasses that extend from the bell top; it is characterized in that, at the vertical direction of the plate face of protecting sheet, the purging pore is set.
According to a further aspect of the invention; a kind of MOCVD reactor is provided; comprise bell, protecting sheet, sedimentary province and set off; the bell below is protecting sheet, and the protecting sheet below is to set off, and arranges the pipeline that is connected with Purge gas between bell and protecting sheet; protecting sheet and set off between arrange, pipeline that be connected with growth gasses that extend from the bell top; it is characterized in that, the substrate of graphite flake is set below protecting sheet, arrange the pipeline that is connected with purified gas between protecting sheet and graphite flake.
The present invention establishes the multilayer protecting sheet, extends the replacement cycle of protecting sheet, improves growth stability.The stack of multilayer protecting sheet is placed in Reaktionsofen, removes the orlop protecting sheet and will can not bring impurity into, does not affect the quality of crystal growth, and many wheel crystal growth continuously, enhance productivity.
Quartz of the present invention protecting sheet processed arranges the purging pore, extends the replacement cycle of the quartzy protecting sheet processed of monolithic, and the purging pore is set, only need to reprocess protecting sheet, does not need other structures of existing equipment are transformed.
Quartz of the present invention protecting sheet processed is divided into graphite flake, and on graphite flake, deposition is more, and on quartzy system protection plate, deposition is less, can repeatedly change, thereby extend replacement cycle of quartzy system protection plate, and graphite flake plates SiC, more corrosion-resistant, cleans cleaner.
The accompanying drawing explanation
Fig. 1 is existing MOCVD reactor;
Fig. 2 is the forward and backward horizontal Reaktionsofen top board of growth;
Fig. 3 is a kind of horizontal Reaktionsofen of the prior art;
Fig. 4 illustrates a kind of upper and lower adjustable for height protecting sheet of the prior art;
Fig. 5 illustrates the protecting sheet schematic diagram according to the first embodiment of the present invention;
Fig. 6 illustrates protecting sheet structural representation according to a second embodiment of the present invention;
Fig. 7 illustrates the effect of single purging pore;
Fig. 8 illustrates the layout of a plurality of purging pores;
Fig. 9 illustrates the protecting sheet structural representation of a third embodiment in accordance with the invention;
Figure 10 illustrates the layout of the purging pore after the layout graphite flake.
As shown in the figure, in order clearly to realize structure or the method for embodiments of the invention, marked in the drawings various size and angle, but this size is not intended to limit the invention under this specific dimensions only for signal needs.According to specific needs, those of ordinary skill in the art can be by these size adjusting, modification, and the adjustment of carrying out and modification still are included in the scope of accompanying claim.
Embodiment
Below in conjunction with the drawings and specific embodiments, a kind of metal organic chemical vapor deposition provided by the invention (MOCVD) reactor is described in detail.
In the following description, a plurality of different aspects of the present invention will be described, yet, for those skilled in the art, can only utilize more of the present invention or entire infrastructure or flow process to implement the present invention.For the definition of explaining, set forth specific number, configuration and order, but clearly, in the situation that do not have these specific detail can implement the present invention yet.In other cases, in order not obscure the present invention, for some well-known features, will no longer be described in detail.
Generally speaking, the invention belongs to the technological improvement to the MOCVD reactor, for the pollution problem of the protecting sheet of the reactor of MOCVD equipment, propose a kind of new improvement project.In the following description, provide a plurality of embodiment, for describing separately the layout for different structure, be appreciated that the cognition according to those skilled in the art, these different layouts can be carried out to combination of two or all combined.
Fig. 5 illustrates the protecting sheet schematic diagram according to the first embodiment of the present invention.With reference to figure 1 and Fig. 5, reactor of the present invention comprises bell, protecting sheet (ceiling), sedimentary province, sets off and bottom, for existing reactor; use the quartz plate of thicker individual layer as protecting sheet, but, in actual motion, change complicated under high temperature; cost is high, and the washing consume is large.In the application's embodiment, protecting sheet is set to the protecting sheet of multilayer, thereby extends the replacement cycle of protecting sheet, improves growth stability.As shown in Figure 5; the reactor of the first embodiment of the application comprises bell; the bell below is the protecting sheet of multilayer; the protecting sheet below is to set off; arrange pipeline between bell and protecting sheet; be used for being connected with Purge gas, protecting sheet and set off between arrange the pipeline extended from the bell top, for passing through growth gasses.
Wherein, the stack of multilayer protection plate, keep somewhere space between layers, and cooling for the sweeping gas purging, the orlop protecting sheet, after can't being suitable for growth, can remove by fast dismantling.
Further, the specification of every layer of protection plate is identical.In addition, the thickness of these protecting sheets or area can be different.Protecting sheet between layers standard pitch can be set, for sweeping gas, purge cooling.Orlop protection plate is after can't grow and removing, and the protection plate on upper strata moves down, and keeps the invariant position of protecting sheet below.
The thickness of the protecting sheet of every one deck can be approximately 0.1-3mm or thinner, and lower floor's protecting sheet can be as thin as after every secondary growth and directly peel off and abandon.The stack of multilayer protecting sheet, be placed in Reaktionsofen, removes the orlop protecting sheet and will can not bring impurity into, do not affect the quality of crystal growth, and the crystal growth of many wheels continuously, enhances productivity.
As shown in Figure 5; the first layer protecting sheet significantly is thicker than the protecting sheet of other each layers; and crucial point in proportion not in figure, those skilled in the art are appreciated that the thickness of the first layer protecting sheet can be generally several times or the decades of times of other each layer of protecting sheet thickness.
Further, the vertical direction at the plate face of multilayer protecting sheet arranges the purging pore.This purging pore can be arranged on protecting sheet the growth gasses inlet mouth around, can irregular layout one or more purge pore, or around a plurality of equidistant purging pores of this inlet mouth circular permutation.
The purging pore of annular array is set on the protection plate, is arranged on the air-flow upstream near Wafer load plate place.By the effect of gaseous purge stream purging, form a radial zone with less deposition, thereby extend the replacement cycle of protecting sheet.Form gaseous purge stream and only need to reprocess protecting sheet, do not need other structures of existing equipment are transformed.
Further, the substrate of graphite flake is set below quartzy protecting sheet processed, between protecting sheet and graphite, layout is connected with the pipeline of purified gas.Wherein, quartzy system protection plate is divided into the plating SiC graphite flake of putting a slice reduced size, and graphite flake has a fixed gap with the protection plate, as purging pore, for gaseous purge stream, passes through.Because the effect of gaseous purge stream purging forms a zone with less deposition, make on graphite flake deposition more, quartzy protecting sheet producer processed deposits less, can repeatedly change graphite flake, extends the replacement cycle that quartzy system is protected plate.
Further, between graphite substrate and protecting sheet, add shutter, so that lower floor's purified gas can not pass through shutter, can not exert an influence to air-flow.
In the second embodiment of the present invention, as shown in Figure 6, provide the structural representation of protecting sheet according to a second embodiment of the present invention.Reactor of the present invention comprises bell, protecting sheet (ceiling), sedimentary province, sets off and bottom.Bell below is protecting sheet, and the protecting sheet below is to set off, and between bell and protecting sheet, arranges pipeline, is connected with Purge gas, protecting sheet and set off between be connected with the pipeline extended from the bell top, for passing through growth gasses.Vertical direction at the plate face of protecting sheet arranges the purging pore.This purging pore can be arranged on protecting sheet the growth gasses inlet mouth around, can irregular layout one or more purge pore, or around a plurality of equidistant purging pores of this inlet mouth circular permutation.
The purging pore of annular array is set on the protection plate, is arranged on the air-flow upstream near Wafer load plate place.Form a radial zone with less deposition by the effect of gaseous purge stream purging, thereby extend the replacement cycle of protecting sheet.Form gaseous purge stream and only need to reprocess protecting sheet, do not need other structures of existing equipment are transformed.
Fig. 7 illustrates the effect of single purging pore, and Fig. 8 illustrates the layout of a plurality of purging pores.As shown in Figure 7, form one at the pore rear and run through the less sedimental zone of having of protecting sheet.In Fig. 8, be provided with the purging pore of circular permutation, form the radial zone of existing less deposition after the purging pore of circular permutation, this zone is positioned at the load plate position of wafer.
Further, protecting sheet adopts the protecting sheet of multilayer, thereby extends the replacement cycle of protecting sheet, improves growth stability.The stack of multilayer protection plate, keep somewhere space between layers, and cooling for the sweeping gas purging, the orlop protecting sheet, after can't being suitable for growth, can remove by fast dismantling.The specification of every layer of protection plate is identical, but the thickness of these protecting sheets or area can be different.Protecting sheet between layers standard pitch can be set, for sweeping gas, purge cooling.After orlop protection plate can't grow and be removed, the protection plate on upper strata moves down, and keeps the invariant position of protecting sheet below.
The thickness of the protecting sheet of every one deck can be approximately 0.1-3mm or thinner, and lower floor's protecting sheet can be as thin as after every secondary growth and directly peel off and abandon.The stack of multilayer protecting sheet, be placed in Reaktionsofen, removes the orlop protecting sheet and will can not bring impurity into, do not affect the quality of crystal growth, and many wheel crystal growth continuously, enhances productivity.
Further, the substrate of graphite flake is set below quartzy protecting sheet processed, between protecting sheet and graphite, layout is connected with the pipeline of purified gas.Wherein, quartzy system protection plate is divided into the plating SiC graphite flake of putting a slice reduced size, and graphite flake has a fixed gap with the protection plate, as purging pore, for gaseous purge stream, passes through.Because the effect of gaseous purge stream purging forms a zone with less deposition, make on graphite flake deposition more, quartzy protecting sheet producer processed deposits less, can repeatedly change graphite flake, extends the replacement cycle that quartzy system is protected plate.
Further, between graphite substrate and protecting sheet, add shutter, so that lower floor's purified gas can not pass through shutter, can not exert an influence to air-flow.
In the application's the 3rd embodiment, a kind of structure of reactor is provided, Fig. 9 illustrates the structural representation of the reactor of a third embodiment in accordance with the invention.As shown in Figure 9, reactor of the present invention comprises bell, protecting sheet (ceiling), sedimentary province, sets off and bottom.Bell below is protecting sheet, and the protecting sheet below is to set off, and between bell and protecting sheet, arranges pipeline, is connected with Purge gas, protecting sheet and set off between arrange the pipeline extended from the bell top, for passing through growth gasses.The substrate of graphite flake is set below quartzy protecting sheet processed, arranges the pipeline that is connected with purified gas between protecting sheet and graphite.
Quartzy system protection plate is divided into the plating SiC graphite flake of putting a slice reduced size, and graphite flake has a fixed gap with the protection plate, as purging pore, for gaseous purge stream, passes through.As shown in figure 10; after purging pore, because the effect of gaseous purge stream purging forms a zone with less deposition, make on graphite flake deposition more, quartzy protecting sheet producer processed deposits less; can repeatedly change graphite flake, extend the replacement cycle of quartzy system protection plate.Most of pollutant sediment, on graphite flake, as long as change graphite flake, can continue the crystal growth, and graphite plates SiC, more corrosion-resistant, cleans cleaner.
Further, add shutter between graphite substrate and protecting sheet.
Further, the vertical direction at the plate face of protecting sheet arranges the purging pore.This purging pore can be arranged on protecting sheet the growth gasses inlet mouth around, can irregular layout one or more purge pore, or around a plurality of equidistant purging pores of this inlet mouth circular permutation.
The purging pore of annular array is set on the protection plate, is arranged on the air-flow upstream near Wafer load plate place.By the effect of gaseous purge stream purging, form a radial zone with less deposition, thereby extend the replacement cycle of protecting sheet.Form gaseous purge stream and only need to reprocess protecting sheet, do not need other structures of existing equipment are transformed.
Further, protecting sheet adopts the protecting sheet of multilayer, thereby extends the replacement cycle of protecting sheet, improves growth stability.The stack of multilayer protection plate, the orlop protecting sheet, after can't being suitable for growth, can remove by fast dismantling.The specification of every layer of protection plate is identical, but the thickness of these protecting sheets or area can be different.Protecting sheet between layers standard pitch can be set, for sweeping gas, purge cooling.After orlop protection plate can't grow and be removed, the protection plate on upper strata moves down, and keeps the invariant position of protecting sheet below.
The thickness of the protecting sheet of every one deck can be approximately 0.1-3mm or thinner, and lower floor's protecting sheet can be as thin as after every secondary growth and directly peel off and abandon.The stack of multilayer protecting sheet is placed in Reaktionsofen, removes the orlop protecting sheet and will can not bring impurity into, does not affect the quality of crystal growth, and many wheel crystal growth continuously, enhances productivity.
Finally it should be noted that, above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited, the present invention can extend to other modification, variation, application and embodiment in application, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (14)
1. a MOCVD reactor; comprise bell, protecting sheet, sedimentary province and set off; the bell below is protecting sheet; the protecting sheet below is to set off; arrange the pipeline that is connected with Purge gas between bell and protecting sheet; protecting sheet and set off between arrange from the bell top, extend, by the pipeline of growth gasses, it is characterized in that, at the vertical direction of protecting sheet, one or more is set and purges pore.
2. reactor according to claim 1, is characterized in that, this one or more purge the irregular growth gasses inlet mouth that is arranged on protecting sheet of pore around; Perhaps around this inlet mouth ring-type, equidistantly arrange.
3. reactor according to claim 1, is characterized in that, the purging pore of the annular array on the protection plate is arranged on the air-flow upstream near Wafer load plate place, forms the radial zone with less deposition by the effect of gaseous purge stream purging.
4. reactor according to claim 1, is characterized in that, protecting sheet adopts the protecting sheet of multilayer, and the stack of multilayer protection plate, keep somewhere space between layers, for sweeping gas, purges cooling.
5. reactor according to claim 4, is characterized in that, thickness or the area difference of every layer of protection plate; Perhaps protecting sheet standard pitch is set between layers, for sweeping gas, purge cooling.
6. reactor according to claim 5, is characterized in that, the thickness of the protecting sheet of every one deck is 0.1-3mm or thinner, and the stack of multilayer protecting sheet is placed in Reaktionsofen.
7. a MOCVD reactor; comprise bell, protecting sheet, sedimentary province and set off; the bell below is protecting sheet; the protecting sheet below is to set off; arrange the pipeline be connected with Purge gas between bell and protecting sheet, protecting sheet and set off between arrange from the bell top, extend, by the pipeline of growth gasses, it is characterized in that; the substrate of graphite flake is set below protecting sheet, arranges the pipeline that is connected with purified gas between protecting sheet and graphite.
8. reactor according to claim 7, is characterized in that, the protection plate is divided into the plating SiC graphite flake of putting reduced size, and graphite flake leaves space with the protection plate, as purging pore, for gaseous purge stream, passes through.
9. reactor according to claim 8, is characterized in that, between graphite substrate and protecting sheet, adds shutter.
10. reactor according to claim 7, is characterized in that, at the vertical direction of the plate face of protecting sheet, one or more is set and purges pore, this purging pore is irregular be arranged on protecting sheet the growth gasses inlet mouth around; Perhaps around a plurality of equidistant purging pores of this inlet mouth circular permutation.
11. reactor according to claim 10, is characterized in that, the purging pore of the annular array on the protection plate is arranged on the air-flow upstream near Wafer load plate place, forms the radial zone with less deposition by the effect of gaseous purge stream purging.
12. reactor according to claim 7, is characterized in that, protecting sheet adopts the protecting sheet of multilayer, and the stack of multilayer protection plate, keep somewhere space between layers, for sweeping gas, purges cooling.
13. reactor according to claim 12, is characterized in that, thickness or the area difference of every layer of protection plate; Perhaps protecting sheet standard pitch is set between layers, for sweeping gas, purge cooling.
14. reactor according to claim 13, is characterized in that, the thickness of the protecting sheet of every one deck is 0.1-3mm or thinner, and the stack of multilayer protecting sheet is placed in Reaktionsofen.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110113928.7A CN102766852B (en) | 2011-05-04 | 2011-05-04 | MOCVD reactor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110113928.7A CN102766852B (en) | 2011-05-04 | 2011-05-04 | MOCVD reactor |
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| CN102766852A CN102766852A (en) | 2012-11-07 |
| CN102766852B true CN102766852B (en) | 2014-01-01 |
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| CN201099698Y (en) * | 2007-08-17 | 2008-08-13 | 甘志银 | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity |
| US20100263588A1 (en) * | 2009-04-15 | 2010-10-21 | Gan Zhiyin | Methods and apparatus for epitaxial growth of semiconductor materials |
| CN202164350U (en) * | 2011-05-04 | 2012-03-14 | 广东量晶光电科技有限公司 | Metal organic chemical vapor deposition reactor |
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Effective date of registration: 20221028 Address after: Floor 11, Mingzhu Building, Zhaoxin Square, Fujing Garden, No. 11, Pingzhou Nangang Road, Guicheng Street, Nanhai District, Foshan, Guangdong 528251 Patentee after: Guangdong Limited by Share Ltd Group Address before: Room 503, Zhaoxin Plaza, Pingzhou Nangang Avenue, Nanhai District, Foshan, Guangdong 528251 Patentee before: QUANTUM WAFER Inc. |
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