CN102757049A - Tubular silicon core - Google Patents
Tubular silicon core Download PDFInfo
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- CN102757049A CN102757049A CN2012102349094A CN201210234909A CN102757049A CN 102757049 A CN102757049 A CN 102757049A CN 2012102349094 A CN2012102349094 A CN 2012102349094A CN 201210234909 A CN201210234909 A CN 201210234909A CN 102757049 A CN102757049 A CN 102757049A
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Abstract
The invention discloses a tubular silicon core. The tubular silicon core is characterized in that the tubular silicon core is in a hollow tube shape, and is further characterized in that the shape of the tubular silicon core is round or square; the length of the tubular silicon core is 10-4,000mm; and the thickness of the wall is 0.5-20mm. The tubular silicon core has the advantages of a round silicon core and a square silicon core; and the using amount of the silicon raw materials is relatively less under the condition that the diameter and the cross section area are the same, so that the using amount of the raw materials of the silicon core and the cost are reduced, and the silicon core with large diameter and cross section area can be manufactured by using the same quantity of silicon materials. In addition, the diameter and the cross section area are enlarged, the outer surface area of the tubular silicon core is also increased, and the increase of settlement speed and the reduction of energy consumption are facilitated.
Description
Technical field
The invention belongs to technical field of polysilicon production, particularly relate to a kind of thermal barrier that in silane thermal decomposition process and Siemens process polycrystalline silicon production, carries out reduction reaction deposition (CVD) polysilicon in as reduction furnace.
Background technology
In the production of polysilicon, the silicon core that thermal barrier is produced from initial molybdenum filament or tantalum pipe to zone melting method arrive line butt silicon core again, has gone through the improvement and the progress in several generations, improves each time and brings lifting all for the quality of polysilicon and technology.Do thermal barrier with molybdenum filament or tantalum pipe, equipment easy to use is simple, but extend influence polysilicon purity and quality of atoms metal under the high temperature, this technology is replaced by silicon core thermal barrier very soon.Silicon is semi-conductor, has the temperature low more negative resistance effect of high resistance more, and the silicon core that draws with zone melting method carries out the CVD growing polycrystalline silicon as thermal barrier in reduction furnace, and the polysilicon quality of production obviously improves.Along with reaching its maturity of line incision technology, line butt silicon core arises at the historic moment, and carries out the line cutting processing with polycrystalline silicon rod, once can cut out more than 100 square silicon core, and production efficiency is attained a yet higher goal than the round silicon core that zone melting method draws.The thermal barrier of production of polysilicon employing at present all is circle silicon core and square silicon core, and molybdenum filament or tantalum pipe do not re-use.
As the deposition carrier in the polycrystalline production process, surface-area plays crucial effects to sedimentation velocity and energy consumption, no matter be circle silicon core or square silicon core; Diameter or sectional area are big more, and sedimentation velocity is just fast more, and the time of high-voltage breakdown is just short more; The energy consumption of producing relatively also can reduce, but based on cost consideration, the xsect of circle silicon core or square silicon core is too big; The raw material that uses will correspondingly increase, and cost will increase, so that sectional area can not be done is too big.
Summary of the invention
The object of the invention is to the defective of prior art the tubular silicon that a kind of materials are few, sedimentation velocity is fast core to be provided.
The present invention adopts following technical scheme for realizing above-mentioned purpose:
The tubular silicon core is characterized in that: it is shaped as hollow tubular.
It is further characterized in that: said tubular silicon core profile is for circular or square.
Said tubular silicon core length is 10mm-4000mm, and wall thickness is 0.5mm-20mm.
The present invention has possessed the advantage of round silicon core and square silicon core; Under the diameter situation identical with sectional area, the silicon raw material of use is less relatively, has reduced the raw material usage quantity and the cost of silicon core; Use the silicon material of same quantity, can produce the silicon core of larger diameter and sectional area.Because diameter and sectional area strengthen, the outer surface area of tubular silicon core also strengthens, and helps increasing sedimentation velocity and cuts down the consumption of energy.
Description of drawings
Fig. 1 is round tubular silicon core synoptic diagram;
Fig. 2 is square tubular silicon core synoptic diagram.
Embodiment
Like Fig. 1, a kind of tubular silicon core shown in 2, it is shaped as hollow tubular.Said tubular silicon core uses the solar level pure silicon to make profile for circular or square.Said tubular silicon core length is 10mm-4000mm, and wall thickness is 0.5mm-20mm.
Claims (3)
1. tubular silicon core, it is characterized in that: it is shaped as hollow tubular.
2. tubular silicon core according to claim 1 is characterized in that: said tubular silicon core profile is for circular or square.
3. tubular silicon core according to claim 1 and 2 is characterized in that: its length is 10mm-4000mm, and wall thickness is 0.5mm-20mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN2012102349094A CN102757049A (en) | 2012-07-06 | 2012-07-06 | Tubular silicon core |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2012102349094A CN102757049A (en) | 2012-07-06 | 2012-07-06 | Tubular silicon core |
Publications (1)
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CN102757049A true CN102757049A (en) | 2012-10-31 |
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Family Applications (1)
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CN2012102349094A Pending CN102757049A (en) | 2012-07-06 | 2012-07-06 | Tubular silicon core |
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CN (1) | CN102757049A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110272049A (en) * | 2018-03-16 | 2019-09-24 | 新特能源股份有限公司 | The preparation method and preparation facilities of hollow silicon core |
CN112210819A (en) * | 2019-07-10 | 2021-01-12 | 芯恩(青岛)集成电路有限公司 | Preparation method and equipment of crystal bar |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101626876A (en) * | 2007-02-22 | 2010-01-13 | 哈纳西利康有限公司 | Be used to make the method for the silicon matter that is used for apparatus for processing plasma |
-
2012
- 2012-07-06 CN CN2012102349094A patent/CN102757049A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101626876A (en) * | 2007-02-22 | 2010-01-13 | 哈纳西利康有限公司 | Be used to make the method for the silicon matter that is used for apparatus for processing plasma |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110272049A (en) * | 2018-03-16 | 2019-09-24 | 新特能源股份有限公司 | The preparation method and preparation facilities of hollow silicon core |
CN110272049B (en) * | 2018-03-16 | 2021-03-02 | 新特能源股份有限公司 | Preparation method and preparation device of hollow silicon core |
CN112210819A (en) * | 2019-07-10 | 2021-01-12 | 芯恩(青岛)集成电路有限公司 | Preparation method and equipment of crystal bar |
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Application publication date: 20121031 |