CN102751296B - Single-substrate device integrating integrated circuits, luminescent elements and sensing elements - Google Patents
Single-substrate device integrating integrated circuits, luminescent elements and sensing elements Download PDFInfo
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Abstract
The invention relates to a device for integrating integrated circuits, luminescent elements and sensing elements on a single substrate. The device is simple and compact in structure and reduced in cost. Specifically a single-substrate electronic device comprises a semiconductor substrate, one or more luminescent elements which are arranged on the semiconductor substrate, one or more sensing elements which are arranged on the semiconductor substrate, one or more integrated circuits which are arranged on the semiconductor substrate, and one or more three-dimensional movement/acceleration positioning instruments which are established by utilizing a micro electromechanical system (MEMS). Each luminescent element emits the light by responding to a current signal. Each sensing element outputs an image sensing signal by responding to the light in a neighboring range. Each three-dimensional movement/acceleration positioning instrument transmits movement sensing information which is matched with the position variation situation of the device. Each integrated circuit is used for processing the image sensing signal or the movement sensing signal and transmitting the current signal to each luminescent element.
Description
Technical field
The present invention relates to a kind of assembling electronic device on a single semiconductor substrate in technical field of semiconductors, the particularly device of a kind of circuit of integration on a single substrate, light-emitting component and sensing element.
Background technology
Solid state light emitter, such as light-emitting diode (LED) and laser diode, have very large advantage compared with incandescent lamp or fluorescent lamp.Solid state light emitter is usually higher than the efficiency of traditional incandescent lamp or fluorescent lamp and heat production is less.When Light-Emitting Diode (LED) or laser diode are placed in red, green, blue element line, they can do white light source or colorful display.Although solid luminescent has some advantage, traditional semiconductor structure for solid luminescent and equipment price relatively costly.The high cost of solid-state light emitting element is partly due to its relative complex and production technology consuming time.
According to Fig. 1, a kind of LED structure 100 of prior art comprises substrate 105, such as a Sapphire Substrate.Resilient coating 110 is positioned on substrate 105.Resilient coating 110 mainly as a wetting layer, to promote Sapphire Substrate smooth and uniform fold.The noncrystalline layer that resilient coating 110 one of normally being formed through Metalorganic Chemical Vapor Deposition (MOCVD) is thin.The III-V compound layer 120 having N-shaped to adulterate is positioned on resilient coating 110.The described III-V compound layer 120 having N-shaped to adulterate normally is made up of gallium nitride (GaN).The quantum well layer 130 of InGaN (InGaN) be positioned at have N-shaped to adulterate III-V compound layer 120 on.An active III-V compound layer 140 is formed on the quantum well layer 130 of InGaN (InGaN).The III-V compound layer 150 having p-type to adulterate is formed in active III-V compound layer 140.P-electrode 160(positive pole) be formed in the III-V compound layer 150 of p-type impurity.N-electrode 170(negative pole) be formed in the III-V compound layer 120 of N-shaped impurity.
GaN crystal has different conductivity in different crystallographic directions.(0001) crystal face is perpendicular to c-axis, has the highest electric polarity compared with other planes.(1-100) crystal face is perpendicular to m axle, is nonpolar.Other GaN crystal faces, such as (1-101) are semi-polar, and its electric polarity is less than (0001) crystal face.
The different crystal faces of GaN crystal, also have different optical properties.The internal quantum (IQE) of nonpolar (1-100) crystal face is the highest; And semi-polarity crystal face, such as the quantum efficiency of (0001) plane is slightly low.The quantum efficiency of (0001) crystal face of polarity is minimum.In light-emitting component, need to produce luminous from nonpolar or semi-polarity crystal face, thus obtain higher luminous intensity.
Early stage GaN LED is in the upper shaping of sapphire, carborundum or spinel substrate (105 in Fig. 1).Recently, the GaN light-emitting component at LiAlO2 Grown with nonpolar light-emitting area is attempted.Although the light of these LED structure is launched be spectrum-stable and polarization, due in the process of LiAlO2 Grown, can produce a lot of flaw in GaN crystal, its luminous intensity is lower.
Summary of the invention
The invention discloses a kind of electronic device, comprise the integrated circuit be structured in single Semiconductor substrate, light-emitting component such as light-emitting diode (LED) and sensing element, and utilize the one or more three-dimensional motions/acceleration position indicator of MEMS (micro electro mechanical system) (MEMS) technique construction.Electronic device of the present invention by the function synthesized of multiple conventional device on one piece independently substrate, therefore can compare conventional device, structure more simply, compacter, cost is also lower.
Single substrate devices of the present invention uses LED light-emitting component, can reduce energy resource consumption.When LED on described single substrate devices uses as light source, sensing element can be used to the motion near perception light source.Only perceive when to have motion around light source, LED light-emitting component is just lit.Single substrate devices of the present invention also can be used as imageing sensor and uses or be used on the camera with light source.
On the one hand, the present invention relates to a kind of single substrate electron device, it comprises a Semiconductor substrate; Build one or more light-emitting components on the semiconductor substrate, described light-emitting component is placed through response current signal and luminous; Build one or more sensing elements on the semiconductor substrate, described sensing element is placed through the light signal responding single substrate electron device adjacent domain, exports an image sensing signal; Also has one or more formation integrated circuit on the semiconductor substrate.Described one or more integrated circuits can process the image sensing signal from sensing element, and make response to the image sensing signal received from sensing element, thus produce a current signal.
On the other hand, the present invention relates to a single substrate electron device, it comprises a Semiconductor substrate, and described Semiconductor substrate contains a first surface and a second surface; One or more light-emitting component builds on the first surface, and described light-emitting component is placed through response current signal and luminous; One or more sensing element builds on the first surface, and described sensing element is placed through the light signal responding single substrate electron device adjacent domain, exports an image sensing signal; Also has one or more integrated circuit be formed on described Semiconductor substrate second surface.Described one or more integrated circuit can process the image sensing signal from sensing element, and makes response to the image sensing signal received from sensing element, thus produces a current signal.
On the other hand, the invention still further relates to a kind of single substrate electron device, it comprises one using (100) crystal face as the silicon substrate of upper surface, offers one or more groove in upper surface position, and a part for groove is defined as (111) crystal face of silicon substrate; One or more light-emitting component, it comprises the GaN crystal structure be positioned on one of them (111) crystal face, and GaN crystal structure has a nonpolar plane, and first plane being parallel to this nonpolar plane; First plane has luminescent layer, and this luminescent layer has at least one quantum well containing GaN.Described luminescent layer is placed through response current signal and luminous; Described single substrate electron device also comprises one or more sensing element be structured on described silicon substrate, and described sensing element is placed through the light signal responding single substrate electron device adjacent domain, exports an image sensing signal; Also have one or more integrated circuit be formed on described silicon substrate, described one or more integrated circuit is set to respond and the image sensing signal processed from sensing element, and the described current signal formed is flowed to described light-emitting component.
The enforcement of described single substrate electron device comprises following one or more aspects.Described one or more integrated circuit receives image sensing signal from described sensing element, and makes response to this, produces described current signal, luminous to trigger described light-emitting component.Described light-emitting component and described sensing element can be structured on the first surface of described Semiconductor substrate.One or more integrated circuit can be formed on the second surface of described Semiconductor substrate.Described second surface is positioned at the side of described Semiconductor substrate, relative with described first surface.Described light-emitting component can send light pulse, and within the cycle that light pulse exists, described sensing element is closed.In the interim of the light pulse that light-emitting component sends, described sensing element can at described single substrate electron device adjacent domain detection light signal.
Described Semiconductor substrate can be a silicon substrate with (111) crystal face, wherein said light-emitting component comprises: a GaN crystal structure be positioned on (111) crystal face, described GaN crystal structure comprises a nonpolar plane, first plane being parallel to this nonpolar plane, and be positioned at the luminescent layer in the first plane.This luminescent layer has at least one quantum well containing GaN.Described light-emitting component also can comprise one or more parts as described below: the first plane can be basically perpendicular to (111) crystal face of silicon base.First plane with a lateral edges of (111) crystal face of silicon base for border.First plane also can be basically perpendicular to the m axle in GaN crystal structure (1-100) direction.GaN crystal structure also can comprise a semi-polar plane, the second plane of this nonpolar plane is parallel to one, wherein GaN crystal structure can comprise the 3rd plane that a polar plane and are parallel to this polar plane, and the second plane is between the first plane and the 3rd plane.Described GaN crystal structure can be adulterated, and has conductivity.Described single substrate electron device also can comprise a upper electrode layer be positioned on described luminescent layer, described luminescent layer between described GaN crystal structure and described upper electrode layer, when being applied with the electric field through described luminescent layer, this light emitting layer luminesces.Described light-emitting component can include the reflector between (111) crystal face and described GaN crystal structure being positioned at described silicon substrate further.Described light-emitting component can include the resilient coating between (111) crystal face being positioned at described reflector and described silicon substrate further.Described silicon substrate can comprise the upper surface of (100) crystal face further and form in a groove of described (100) crystal face upper surface, and a part for this groove is restricted to (111) crystal face of silicon substrate.The shape of described groove is channel shaped, reverse pyramid, or the reverse pyramid of brachymemma.Described quantum well can comprise several InGaN layer and GaN layer.
Described single substrate electron device can comprise on the semiconductor substrate with several sensing elements of two-dimensional array arrangement further, described one or more integrated circuits produce a picture signal by process image sensing signal, and described picture signal is in order to be depicted in the picture presented near several described sensing elements.Described sensing element can be the camera of the CMOS (Complementary Metal Oxide Semiconductor) formula built on the semiconductor substrate.Described single substrate electron device can also arrange the three-dimensional motion/acceleration position indicator based on MEMS (micro electro mechanical system), produces the motion-sensing signal matched with its position situation of movement.In same Semiconductor substrate, described light-emitting component, sensing element, three-dimensional motion/acceleration position indicator can be built simultaneously, and in order to the microprocessor of response image or motion-sensing signal in integrated circuit, also can by two or three element of combination in any in above-mentioned four kinds of elements, be structured in a Semiconductor substrate simultaneously, the combination of two kinds of elements is including but not limited to light-emitting component and sensing element, light-emitting component and three-dimensional motion/acceleration position indicator, light-emitting component and microprocessor, sensing element and three-dimensional motion/acceleration position indicator, etc.; The combination of three kinds of elements including but not limited to: light-emitting component and three-dimensional motion/acceleration position indicator and microprocessor, light-emitting component and sensing element and microprocessor.
Accompanying drawing explanation
As the part be described specific description embodiment of the present invention shown in accompanying drawing, together with the description for making an explanation to inventive principle.
Fig. 1 is the cross-sectional view of LED structure in prior art.
Fig. 2 is the cross-sectional view of GaN light-emitting component in one embodiment of the present of invention.
Fig. 3 is the graphic extension of the sandwich construction cross section of light-emitting component shown in Fig. 2.
Sectional view shown in Fig. 4 A, Fig. 4 B and Fig. 4 C describes the Si(111 shown in Fig. 2 in detail) growth of GaN crystal on crystal face.
Fig. 5 A is the cross-sectional perspective view of light-emitting component shown in Fig. 2, Fig. 3 and Fig. 4 C.
Fig. 5 B is the stereogram of the light-emitting component shown in Fig. 5 A.
Fig. 6 A describes from the light transmit direction viewed from semi-polarity and polar GaN crystal face.
Fig. 6 B is in luminescence process, the photo of light-emitting component shown in Fig. 2, Fig. 3 and Fig. 5 A.
Fig. 7 is formed on same substrate, the stereogram after being arranged by several light-emitting components similar with the light-emitting component shown in Fig. 5 A and 5B.
Fig. 8 is the stereogram of a kind of light-emitting component with light-emitting component shown in Fig. 7 with difformity size.
Fig. 9 is formed on same substrate, the stereogram after being arranged by several light-emitting components similar with light-emitting component shown in Fig. 8.
Figure 10 is the cross-sectional view of a single substrate devices in one embodiment of the present of invention, it comprises light-emitting component, sensing element and integrated circuit.
Figure 11 is the illustration sequential chart that in the single substrate devices shown in Figure 10, light-emitting component and sensing element run.
Embodiment
Shown in Figure 2, light-emitting component 900 comprises a silicon substrate 210, it has the upper surface 201 that is positioned at (100) crystal face, the upper surface 201 being positioned at (100) crystal face has layer of sin mask 265, groove 220 having at least a part to be restricted to (111) crystal face 202, be positioned at buffering on (111) crystal face 202 and 230, one, reflector is positioned at the GaN crystal structure 240 having doping cushioned with on reflector 230, and luminescent layer; Luminescent layer comprises the quantum well layer 250 being positioned at and having in the GaN crystal structure 240 of doping further, and one deck is positioned at the GaN layer 260 having doping on quantum well layer 250.There is the GaN crystal structure 240 of doping and have the GaN layer 260 of doping to have conductivity, and can respectively as the bottom electrode of quantum well layer 250 and top electrode.SiN mask 265 is formed an electrode layer 205, and it is also electrically connected with there being the GaN layer 260 of doping, is used for receiving the voltage provided from an external power source.
Wherein, described SiN mask 265 bears multiple-task in the forming process of light-emitting component 900: in the etching process of silicon substrate 210, it can suppress GaN crystallization to grow on described (100) crystal face, and for the position of determining groove 220 and size (hypomere will specifically describe).In the running of light-emitting component 900, described SiN mask 265 also plays insulation buffer action between electrode layer 205 and silicon substrate.In certain embodiments, described electrode layer 205 uses a kind of transparent electric conducting material to make, such as indium tin oxide (ITO), its large area in the GaN layer 260 having doping can be made to cover, thus make balanced current distribution and pass quantum well layer 250.
Groove 220 in light-emitting component 900 is formed at (100) crystal face (that is, upper surface 201) of silicon substrate 210.On the SiN mask 265 being formed at this upper surface 201, foursquare or rectangular opening can be had.The area of the every side of these openings can from more than 10 microns to several millimeters not etc.Described opening can be formed by lithographic method, it is such as the U.S. Patent application 12/177 using " light-emitting component " by name of being put on record by Shaoher.Pan on July 21st, 2008, the lithographic method proposed in 144 realizes, and the content disclosed in it is combined in by reference herein at this.Etched by the aperture position at SiN mask, form the groove 220 with (111) crystal face 202.(111) crystal face 202 relative to (100) crystal face (that is, upper surface 201) of silicon substrate 210 in 54.7 ° of angles.
Buffering as shown in Figure 2 and reflector 230 are represented in figure 3.See Fig. 3, these levels comprise one deck first resilient coating 231, one deck second resilient coating 232 and one deck reflector 235.See Fig. 3 and table 1, the first resilient coating 231, also referred to as high temperature buffer layer, comprises the AlN of silicon doping.Thickness is first resilient coating 231 of 30nm, high temperature silicon doped with Al N, by the temperature between 1120 DEG C to 1170 DEG C and be approximately 25mbar pressure under keep 15 minutes, deposit to substrate 210(as shown in Figure 2) (111) crystal face 202 on.Thick the second resilient coating 232 of 10nm, also referred to as low temperature buffer layer, also comprises the AlN of silicon doping.Second resilient coating 232, by keeping 5 minutes under the pressure of 755 DEG C of these lower temperature and about 50mbar, deposits on the first resilient coating 231.The reflector 235 that 400nm is thick comprises the AlGaN doped with silicon, and it, by keeping 50 minutes under the pressure of the temperature between 1220 DEG C to 1030 DEG C and about 25mbar, deposits on the second resilient coating 232.
In other some embodiment (not shown)s, also reflector can be arranged between the first resilient coating and silicon substrate; Or the effect of resilient coating inherently can be played in reflector simultaneously, then do not need to arrange independently the first resilient coating or the second resilient coating in addition.In these embodiments, by method similar to the above, deposition of reflective layer (and resilient coating) can be carried out; The thickness of concrete deposition then can need setting according to the application of reality.
Have GaN crystal structure 240 thickness of doping to be greater than 1 μm, it passes through the temperature at about 970 DEG C, and keeps more than 1 hour under the pressure of 250mbar, deposits on reflector 235.Described have the GaN crystal structure 240 of doping to be the GaN comprising silicon doping.With reference to Fig. 4 C and Fig. 3, in precipitation process, have the GaN crystal structure 240 of doping grow in (such as, with (0001) direction) along a c-axis, thus formation is substantially with (0001) crystal plane be parallel and perpendicular to the surface 242 of c-axis.Surface 242 is also parallel with (111) crystal face 202 of substrate 210 substantially.The surface 242 of the GaN crystal structure 240 of doping is had to be an electric polarity surface.There is the GaN crystal structure 240 of doping to have the m axle in edge (1-100) direction, which defines the apolar surfaces of electricity.M axle or (1-100) direction substantially parallel with (111) crystal face 202 of substrate 210.
There is the GaN crystal structure 240 of doping also along (1-101) direction self-sow, the surface 241 that is parallel to (1-101) crystal face should be defined in (1-101) direction.This surface 241 is semi-polar, and it has the lower electric polarity of specific surface 242.Surface 241 and surface 242 with an angle between 108 ° to 128 °, such as, are 118 °, arranged in a crossed manner.See Fig. 5 A, the GaN crystal structure 240 of doping is had also to comprise the surface 245 being positioned at central area, groove 220 depths.The direction on surface 245, depends in part on the deposited material of the quantum well layer 250 used in central area, groove 220 depths.
Shown in Fig. 4 C, when surface 241 grows into the edge 215 of (111) crystal face of silicon substrate 210, the crystal growth of semi-polar surface is suppressed.In the growth course of GaN crystal structure 240, an apolar surfaces 244 is formed between edge 215 and semi-polar surface 241, and the crystal growth rate of this apolar surfaces 244 is higher than semi-polar surface 241.Apolar surfaces 244 is do not have electropolar substantially, and GaN crystal grows along it, and apolar surfaces 244 is also perpendicular to m axle (1-100).As shown in Figure 2, surface 241 and surface 244 with a certain angle between 142 ° to 162 °, such as, are with 152 °, mutually intercept.Surface 244 is rectangular relative to (111) crystal face 202 of substrate 210.
Then, quantum well layer 250 comprises the GaN and InGaN layer that multiple (being such as eight) repeat to interlock, and every layer about has 20nm and 3nm thick respectively.As shown in Figure 3 and Table 1, quantum well layer 250 is large about 740 DEG C of temperature, is formed under about 200mbar pressure.Resilient coating 231 and 232(Fig. 3) mechanical strain between (111) silicon wafer face 202 and the GaN crystal structure 240 having doping can be reduced, thus make the GaN crystal structure 240 of doping at (111) crystal face 202 Epitaxial growth of silicon substrate 210.Resilient coating 231 and 232 also can prevent breaking and being separated in quantum well layer 250, thus improves the luminous efficiency of light-emitting component 900.Subsequently, the thick GaN layer 260(of 50nm namely, top electrode), and doped with such as Mg, by keeping 4 minutes at 870 DEG C of temperature and 200mbar pressure, to deposit to above quantum well layer 250.
Resilient coating 231 and 232, reflector 235, and quantum well layer 250 is by using ald (ALD), metallo-organic compound vapor deposition (MOCVD), plasma enhanced chemical vapor deposition (PECVD), chemical vapour desposition (CVD), or the method such as physical vapor deposition (PVD) is formed.There are the GaN crystal structure 240 of doping and the GaN layer 260 having doping, formed by physical vapor deposition (PVD), plasma enhanced chemical vapor deposition (PECVD) or chemical vapour desposition (CVD) deposition.
In optical transmission operation, to including respectively between the GaN crystal structure 240 of doping and the bottom electrode of GaN layer 260 having doping and top electrode, apply a voltage.Through the electric current of quantum well layer 250, reconfiguring of electronics and hole can be caused, thus luminous.
The growth of the GaN crystal structure 240 of doping is described in detail as shown in Fig. 4 A, 4B and 4C.GaN crystal structure 240 is limited by semi-polar surface 241 and 243 at first.Be used for determining that the m axle (that is, (1-100) direction) of nonpolar plane is substantially parallel with the surface 202 of silicon substrate.At the growing period of GaN crystal structure 240, the electric polarity surface 242 parallel with m axle is formed at growth front.Semi-polar surface 241 is 62 ° of angles relative to (111) crystal face 202 of silicon substrate.GaN along the growth rate of c-axis (such as, in (0001) direction) higher than the growth rate along m axle (1-100) direction.
Please refer to now shown in Fig. 4 C, in the process that GaN crystal structure 240 grows, its surface 243 arrives a lateral edges 215 of silicon substrate 210, and the growth of GaN crystal structure is suppressed at this edge 215 place, and now other crystalline materials then continue growth on surface 243.A new apolar surfaces 244 is formed between edge 215 and semi-polar surface 243.New surface 244, perpendicular to m axle (being such as (1-100) crystallographic axis) and with edge 215 for border, the direction of its growth parallels with m axle.New surface 244 is basically perpendicular to the m axle of GaN crystal, is also basically perpendicular to (111) crystal face 202 of silicon substrate 210.New surface 244 is approximately 125 ° with the angle of (100) crystal face of silicon substrate 210.In Fig. 2, upper surface 201 is positioned at (100) crystal face.Inclined surface in groove is positioned at (111) crystal face.For the ease of checking, in Figure 10 A-10C, (111) crystal face is set as horizontal direction.
It should be noted that, under unconfined environment of crystal growth, apolar surfaces is not generally formed in growth front (growth front), this is because GaN along the growth rate of m axle (that is, in (1-100) direction) higher than along the growth rate in (1-101) direction.For the specific implementation of apolar surfaces in the present invention, first be form GaN crystal structure until the marginal surface of its adjacent silicon substrate (111) crystal face, then growing gan crystal structure is until the size that described apolar surfaces and semi-polar surface are formed reaches the requirement of expection.
It is the stereogram (clear in order to express, electrode layer 205 is not shown in the diagram) of light-emitting component 900 shown in Fig. 5 A and Fig. 5 B.The GaN layer 260 having doping on quantum well layer 250, comprises the light-emitting area 262 of a light-emitting area on semi-polar surface 214 261, on polar surfaces 242, and a light-emitting area 264 in apolar surfaces 244.Fig. 6 A illustrates the light transmit direction from semi-polar surface 241 and polar GaN plane of crystal 242.Fig. 6 B is during light is launched, the photo of above-mentioned light-emitting component.The center of light-emitting component is blocked by an electrode end portions, and this electrode and top electrode are pressed together each other to be formed and contact, to provide the voltage through quantum well layer.From the light that the quantum well layer 250 semi-polar surface 241 sends, be better than the light sent from the quantum well layer 250 polar surfaces 242; And from apolar surfaces 244 quantum well layer 250 launch only the strongest.Further, laying respectively at the surface 264 and 261 on nonpolar and semi-polar surface 244,241, is upward, namely along topmost light emission direction in figs. 5 a, 5b.It should be noted that, in disclosed light-emitting component, the growth of groove and GaN structure is through and arranges and the apolar surfaces of GaN structure and semi-polar surface are outwards exposed on main light emission direction, thus the illumination from stronger light-emitting area is maximized.Therefore, the significant advantage of light-emitting component disclosed herein is, forming light-emitting layer, providing higher intensity of illumination by having on the apolar surfaces of the GaN structure of doping and semi-polar surface at one.
As shown in Figure 7, in the arrangement 1300 of light-emitting component 900A-900D, described each light-emitting component 900A-900D has the structure as shown in Fig. 2-5B, and the arrangement of these light-emitting components 900A-900D can be formed on a common substrate 210.The ray structure with varying number can be set for described arrangement 1300, to adapt to the needs of different luminescence and display device, such as, 2 × 1,2 × 2,3 × 2,3 × 3,4 × 4 etc.
Light-emitting component can be made into different geomeries.The shape of the groove of silicon substrate can be the reverse pyramid of reverse pyramid or brachymemma, thus provides one and be substantially foursquare light-emitting component.The shape of the groove of silicon substrate can be the long and narrow groove of as shown in the cross sectional view of fig. 2 one, forms the light-emitting component of a linear.In light-emitting component 1400 as shown in Figure 8 outside surface 261,262 and 264, form the light-emitting zone of a linear.First long and narrow groove is formed at substrate 210, then forms resilient coating, reflector, the GaN structure having doping, quantum well layer and upper electrode layer, makes with the step identical with 900A-900D in above-mentioned light-emitting component 900, Fig. 7.In addition, multiple rectilinear light-emitting component 1400A-1400D can be formed on a common substrate 210, as shown in Figure 9.
As shown in Figure 10, it is described above that the specific embodiment of a single substrate devices 1000 comprises one or more light-emitting component 1010(), one or more sensing element 1050, one or more integrated circuit 1030, and utilize the one or more three-dimensional motions/acceleration position indicator 1080(3D accelerometer of MEMS (micro electro mechanical system) (MEMS) technique construction), all these is formed on a substrate 1005.Described light-emitting component 1010 and described sensing element 1050 can be structured on the first surface 1011 of described substrate 1005, described integrated circuit 1030 and described three-dimensional motion/acceleration position indicator 1080 are then structured on the second surface 1012 of described substrate 1005, and described second surface 1012 is relative with described first surface 1011.In some other embodiment, described light-emitting component 1010 and described sensing element 1050 also can be structured in the not ipsilateral of a substrate.
Described substrate 1005 is inclined to and adopts a kind of semi-conducting material such as silicon to make.Described substrate 1005 has a upper surface in (100) crystal orientation.Described light-emitting component 1010 on described single substrate devices 1000 can compatible different structure and material composition.Described light-emitting component 1010 can be various Sony ericsson mobile comm ab, such as, be LED or laser aid.In preferred embodiment, described light-emitting component 1010 can adopt the form similar to the described light-emitting component 900 shown in Fig. 2-9 to build.An electrode layer 1015 can in the upper formation of the top electrode of described quantum well layer (i.e. numbering 250 in Fig. 2 and Fig. 3) (namely having the GaN layer 260 of doping shown in Fig. 2 and Fig. 3).With structural similarity described by above-mentioned Fig. 2, described electrode layer 1015 realizes insulated separation by a SiN mask layer and described silicon substrate 1005.The conductive layer of usual use layer of transparent, has GaN layer 260 upper surface of doping, can be uniformly distributed and pass the quantum well layer of whole activation to make electric current described in such as indium tin oxide (ITO) covers; Afterwards, described electrode layer 1015 is formed at the upper surface of described transparent conductive ITO layer selectively.By the mode of external power source or ground connection, set a constant voltage at described electrode layer 1015.
Described integrated circuit 1030 can comprise transistor, diode, resistance, electric capacity and other semiconductor device, also includes independently microprocessor 1100(CPU).Described integrated circuit 1030 also includes several drive circuits 1200, and described drive circuit 1200 is connected by connecting line 1020 and the bottom electrode (that is, as shown in Figures 2 and 3 described in have the GaN crystal structure 240 of doping) on described light-emitting component 1010.The implementation of described connecting line 1020 is very common in the art.In various embodiments, can be control by described drive circuit 1200 is independent and drives described light-emitting component 1010 luminous; Also can be after receiving the control command that described microprocessor 1100 sends, then by described drive circuit 1200 lighting elements 1010.Described light-emitting component 1010 can respond the current signal passed between described top electrode and described bottom electrode, thus luminous.
Described light-emitting component 1010 and described integrated circuit 1030 need in vacuum treatment indoor usually, just can make through treatment of different temperature.If described light-emitting component 1010 uses the III-V material as described in Fig. 2-9 to construct, then the treatment temperature needed is up to 1500 DEG C (as shown in table 1).On the other hand, because the highest manufacture temperature of silicon integrated circuit is generally about 800 DEG C, temperature is too high can damage integrated circuit.So first described light-emitting component 1010 should be structured on substrate.Just build described integrated circuit 1030 afterwards.The lower treatment temperature used when building described integrated circuit 1030, can't damage described light-emitting component 1010.
Described sensing element 1050 can be multiple camera or claim imageing sensor (Image sensor), the image being used for being caught is converted into digital signal, the camera that such as directly can build CMOS (Complementary Metal Oxide Semiconductor) formula (CMOS) on a semiconductor substrate realizes, and this is very common technically.After described sensing element 1050 detection of photons, by the microprocessor 1100 output image transducing signal of connecting line 1040 to described integrated circuit 1030; Described microprocessor 1100 processes the digital quantity or analog data signal that comprise described image sensing signal, and produces a picture signal, and this picture signal is for describing a picture around described sensing element 1050.In certain embodiments, described single substrate devices 1000 can comprise the two-dimensional array of described sensing element 1050.The image sensing signal sent by the two-dimensional array of described sensing element, can be processed by described integrated circuit 1030, in order to identify the object be positioned at before described sensing element 1050.The image sensing signal that the microprocessor 1100 of described integrated circuit 1030 can send according to sensing element 1050 or its array carrys out formation control order, and drive circuit 1200 can drive light-emitting component 1010 to carry out luminescence according to this control command.
Described three-dimensional motion/acceleration position indicator 1080 can be used for measuring device the moving and acceleration change along certain specific direction being provided with this position indicator, and some position indicators can also process the geographical location information obtaining device further.Also by connecting line 1090, to described three-dimensional motion/acceleration position indicator 1080 transmission instruction, it carries out the relevant control instruction measured to described integrated circuit 1030, and receives the motion-sensing signal of described three-dimensional motion/acceleration position indicator 1080 feedback.The microprocessor 1100 of integrated circuit 1030 also can carry out formation control order according to described motion-sensing signal, makes drive circuit 1200 drive light-emitting component 1010 to carry out luminescence according to this control command.In other some embodiments, image sensing signal or motion-sensing signal also directly as control command, can be lighted to control drive circuit 1200 or extinguish light-emitting component 1010.
Show the image sensitivity cycle of described sensing element 1050 in fig. 11, the communication signal transmissions that form by frequency modulation or intensity modulated can show by light that narrow-band LED sends further gives another integrated circuit, thus controls image sensing or lighting function or do signal transmission.
As shown in Figures 10 and 11, described light-emitting component 1010 sends light pulse " LP1 ", " LP2 ", " LP3 ", " LP4 ", " LP5 " ... Deng, pulse duration is between 0.1ms to 5ms, interval time lengths is 1ms to 50ms, interval time long enough, to enable the interruption of human eye resolved light photograph.LED pulse " LP1 ", " LP2 ", " LP3 ", " LP4 ", " LP5 " ... Deng frequency (f) and intensity (I) determine the illuminance of described light-emitting component 1010.
Sending light pulse " LP1 ", " LP2 ", " LP3 ", " LP4 ", " LP5 " ... Deng during, described sensing element 1050 is closed, to avoid the damage that photon is saturated and cause due to strong illumination.Described sensing element 1050 is only at light pulse " LP1 ", " LP2 ", " LP3 ", " LP4 ", " LP5 " ... Deng between interval time just start, as image sensing cycle " SP1 ", " SP2 ", " SP3 ", " SP4 ", " SP5 " ... Deng shown in.Each sensing cycle " SP1 ", " SP2 ", " SP3 ", " SP4 ", " SP5 " ... Deng width determine the sensitivity of described sensing element 1050.Described sensing element 1050 may detect the photon in visible ray, infrared ray, ultraviolet spectral range.The measured intensity of image sensing signal can be change within an image sensing cycle, also can cross over different several image sensing cycles.The change of intensity of illumination signal can be used to the motion detecting object in described sensing element 1050 close region.
In certain embodiments, do not work at described light-emitting component 1010, or light pulse " LP1 ", " LP2 ", " LP3 ", " LP4 ", " LP5 " ... Deng between interval time in, the detectable human motion being positioned at described single substrate devices 1000 adjacent domain of described sensing element 1050.When having detected human motion, described sensing element 1050 just synthetic image transducing signal; Human motion also may produce change in displacement with seasonal three-dimensional motion/acceleration position indicator 1080 and generate motion-sensing signal.Consequently, make the microprocessor at integrated circuit 1030 place, described image sensing signal and/or motion-sensing signal are responded, and then drive described light-emitting component 1010 luminous.Preferably, as long as described sensing element 1050 detects human motion within the cycle preset, described integrated circuit 1030 just controls described light-emitting component 1010 continuous illumination.When human motion is no longer detected, image sensing signal or motion-sensing signal not regeneration, described integrated circuit 1030 can close described light-emitting component 1010, and lighting-off is with energy savings.
An advantage of single substrate electron device provided by the invention by the function synthesized of multiple conventional device on one piece of single substrate, can come compared with conventional device, structure more simply, compacter, cost is also lower.Single substrate devices of the present invention, by existing micro-processing technology, by the microprocessor of light-emitting component, sensing element, integrated circuit, be structured on same silicon substrate with the three-dimensional motion/acceleration position indicator of micro mechanical system simultaneously, or be only two or three element simultaneously building wherein combination in any.Such as, the combination of two kinds of elements can be: light-emitting component and sensing element, light-emitting component and three-dimensional motion/acceleration position indicator, light-emitting component and microprocessor, sensing element and three-dimensional motion/acceleration position indicator, etc.; The combination of three kinds of elements can be: light-emitting component and three-dimensional motion/acceleration position indicator and microprocessor, light-emitting component and sensing element and microprocessor, etc.Single substrate devices of the present invention also can provide the motion monitoring function of one, the energy resource consumption of light-emitting component is reduced.Although it should be noted that traditional illuminating product may comprise motional induction function, these light sensings and motion-sensing are all on disparate modules, and each have different circuit boards, or are at least control by the integrated circuit on various substrates.By image sensing and lighting function being focused in one piece of independent Semiconductor substrate (or on chip), element of the present invention demonstrates higher integration and miniaturization than legacy system.
Above-mentioned explanation and accompanying drawing only illustrate as the principle of the invention.Described device can have various shape and size, and coverage of the present invention neither be only limitted to the scope of most preferred embodiment.Technical staff can expect numerous application of the present invention.Therefore, the present invention can't be limited on disclosed object lesson, or shown in upper figure and in precise structure, operational mode or dimensions mentioned above.And all suitable amendment structures and equivalent structure all belong within scope of the present invention.Such as, light-emitting component and sensing element can be structured in same surface or the heteropleural surface of same substrate.Each light-emitting component can be triggered, like this by lighting the light-emitting component of varying number to adjust luminous intensity by the driver transistor being positioned at integrated circuit independent.Or all light-emitting components are all controlled by driver transistor same in integrated circuit, like this, they can simultaneously brightly go out simultaneously.In addition, except the square pulse shown in above-mentioned example, LED pulse also can adopt other different form.Further, substrate can adopt other semi-conducting material to make, such as germanium, iii-v and II-VI group semi-conducting material etc.
Further, one of them GaN crystal structure and have the GaN layer of doping can be N-shaped doping and other be p-type doping.These two kinds of doped forms can be changed, and still compatible light-emitting component of the present invention.LED structure of the present invention is suitable for the lamp sending green glow, blue light and other color of light.In addition, groove also can have other shape, and is different from above-mentioned example.Such as, on upper surface, the opening of mask layer can not be square or rectangular, but other shape.In another example, one can be used to have the silicon chip of (111) crystal face as substrate, etch the groove with (100) crystal face above.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (31)
1. a single substrate electron device, is characterized in that, comprise:
A Semiconductor substrate;
One or more light-emitting component built on the semiconductor substrate, described light-emitting component is placed through response current signal and comes luminous;
One or more sensing element built in same described Semiconductor substrate, described sensing element exports an image sensing signal after being set to detect the photon in visible ray, infrared ray or ultraviolet spectral range to described single substrate electron device adjacent domain;
And, one or more integrated circuit built in same described Semiconductor substrate, described integrated circuit forms described current signal by processing described image sensing signal, and described current signal is transported to described light-emitting component;
Further, described light-emitting component is used for utilizing emitted light pulse, and at light pulse duration of existence, described sensing element is closed; In the time interval that described light-emitting component sends light pulse, the light of described sensing element to described single substrate electron device adjacent domain detects.
2. single substrate electron device as claimed in claim 1, it is characterized in that, described light-emitting component and sensing element are implemented on the first surface of described Semiconductor substrate.
3. single substrate electron device as claimed in claim 2, it is characterized in that, described integrated circuit is implemented on the second surface of described Semiconductor substrate.
4. single substrate electron device as claimed in claim 3, it is characterized in that, described second surface is positioned at the side of described Semiconductor substrate, relative with described first surface.
5. single substrate electron device as claimed in claim 1, is characterized in that, described Semiconductor substrate is a silicon substrate with (111) crystal face, and described light-emitting component comprises:
A GaN crystal structure be positioned on (111) crystal face of described silicon substrate, described GaN crystal structure has a nonpolar plane, and is parallel to first plane of this nonpolar plane;
And be positioned at several luminescent layers in described first plane, described luminescent layer has at least one quantum well comprising GaN.
6. single substrate electron device as claimed in claim 5, is characterized in that, described first plane orthogonal is in (111) crystal face described in silicon substrate.
7. single substrate electron device as claimed in claim 5, is characterized in that, described first plane with a lateral edges of (111) crystal face described in silicon substrate for border.
8. single substrate electron device as claimed in claim 5, is characterized in that, described first plane orthogonal is in the m axle configured in (1-100) direction of described GaN crystal structure.
9. single substrate electron device as claimed in claim 5, is characterized in that, described GaN crystal structure also comprises a semi-polar plane, and second plane being parallel to this semi-polar plane; Described GaN crystal structure also comprises a polar plane, and the 3rd plane being parallel to this polar plane; Described second plane is between described first plane and the 3rd plane.
10. single substrate electron device as claimed in claim 5, is characterized in that, has doping in described GaN crystal structure, and described GaN crystal structure has conductivity;
Described single substrate electron device comprises further:
A upper electrode layer be positioned on described luminescent layer, described luminescent layer between described GaN crystal structure and described upper electrode layer, when being applied with the electric field through described luminescent layer, this light emitting layer luminesces.
11. single substrate electron devices as claimed in claim 5, is characterized in that, described light-emitting component includes the reflector between (111) crystal face and described GaN crystal structure being positioned at described silicon substrate further.
12. single substrate electron devices as claimed in claim 11, is characterized in that, described light-emitting component includes the resilient coating between (111) crystal face being positioned at described reflector and described silicon substrate further.
13. single substrate electron devices as claimed in claim 5, it is characterized in that, described silicon substrate comprises further:
A upper surface being positioned at (100) crystal face of this silicon substrate;
One or more groove being formed at described upper surface, a part for described groove is restricted to described (111) crystal face of silicon substrate.
14. single substrate electron devices as claimed in claim 13, is characterized in that, the shape of described groove is channel shaped, reverse pyramid, or the reverse pyramid of brachymemma.
15. single substrate electron devices as claimed in claim 5, is characterized in that, described quantum well package is containing several InGaN layer and GaN layer.
16. single substrate electron devices as claimed in claim 1, it is characterized in that, described sensing element is the camera of CMOS (Complementary Metal Oxide Semiconductor) formula.
17. single substrate electron devices as claimed in claim 1, it is characterized in that, described single substrate electron device comprises on the semiconductor substrate with several sensing elements of two-dimensional array arrangement further, described integrated circuit produces a picture signal by process image sensing signal, and described picture signal is in order to be depicted in the picture presented near sensing element described in several.
18. single substrate electron devices as claimed in claim 1, it is characterized in that, described single substrate electron device is also included in one or more three-dimensional motions based on MEMS (micro electro mechanical system)/acceleration position indicator that same described Semiconductor substrate builds, and produces the motion-sensing signal matched with the position situation of movement of this three-dimensional motion/acceleration position indicator; The current signal exciting described light-emitting component luminescence is formed according to described motion-sensing signal.
19. 1 kinds of single substrate electron devices, is characterized in that, comprise:
A Semiconductor substrate, it has first surface and second surface;
One or more light-emitting component, is implemented on described first surface, and described light-emitting component is set to make response concurrent light to a current signal;
One or more sensing element, is implemented on described first surface, and described sensing element exports an image sensing signal after being set to detect the photon in visible ray, infrared ray or ultraviolet spectral range to described single substrate electron device adjacent domain;
And the integrated circuit built on described second surface, for the treatment of described image sensing signal, and responds described image sensing signal to produce described current signal.
20. single substrate electron devices as claimed in claim 19, it is characterized in that, described light-emitting component comprises at least one quantum well containing GaN, and described quantum well is luminous by the described current signal of response.
21. single substrate electron devices as claimed in claim 20, it is characterized in that, described sensing element is the camera of CMOS (Complementary Metal Oxide Semiconductor) formula.
22. 1 kinds of single substrate electron devices, is characterized in that, comprise:
A silicon substrate, it has the upper surface that is positioned at (100) crystal face of described silicon substrate, and described upper surface has one or more groove, and a part for described groove is restricted to (111) crystal face of silicon substrate;
One or more light-emitting component, comprises further:
A GaN crystal structure, be positioned at silicon substrate one of them described on (111) crystal face, described GaN crystal structure comprises a nonpolar plane, and first plane being parallel to this nonpolar plane;
And be positioned at several luminescent layers in described first plane, described luminescent layer has at least one quantum well containing GaN, described luminescent layer be set to a current signal make response and luminous;
One or more sensing element, is implemented on described silicon substrate, and described sensing element exports an image sensing signal after being set to detect the photon in visible ray, infrared ray or ultraviolet spectral range to described single substrate electron device adjacent domain;
And one or more integrated circuit built on a silicon substrate, forms described current signal by processing described image sensing signal, and described current signal is transported to described light-emitting component.
23. single substrate electron devices as claimed in claim 22, it is characterized in that, described GaN crystal structure also comprises a semi-polar plane, and second plane being parallel to this semi-polar plane; Described GaN crystal structure also comprises a polar plane, and the 3rd plane being parallel to this polar plane; Described second plane is between described first plane and the 3rd plane.
24. single substrate electron devices as claimed in claim 22, it is characterized in that, described sensing element is structured on the upper surface of (100) crystal face being positioned at described silicon substrate.
25. single substrate electron devices as claimed in claim 22, is characterized in that, described integrated circuit is structured on the lower surface of of described silicon substrate, that is, described surface is lower than the upper surface of this silicon substrate.
26. 1 kinds of single substrate electron devices, is characterized in that, comprise:
A Semiconductor substrate; Described Semiconductor substrate is a silicon substrate with (111) crystal face;
One or more sensing element built in same described Semiconductor substrate, described sensing element is the camera of CMOS (Complementary Metal Oxide Semiconductor) formula, and the image near this camera is converted into corresponding image sensing signal;
One or more light-emitting component built in same described Semiconductor substrate, described light-emitting component comprises further:
A GaN crystal structure be positioned on (111) crystal face of described silicon substrate, described GaN crystal structure has a nonpolar plane, and is parallel to first plane of this nonpolar plane;
And be positioned at several luminescent layers in described first plane, described luminescent layer has at least one quantum well containing GaN, described quantum well is luminous by response current signal;
Described single substrate electron device is also included in one or more three-dimensional motions based on MEMS (micro electro mechanical system)/acceleration position indicator that same described Semiconductor substrate builds, and produces the motion-sensing signal matched with the position situation of movement of this three-dimensional motion/acceleration position indicator; Formed according to described motion-sensing signal or described image sensing signal in order to excite the current signal of described light-emitting component luminescence.
27. single substrate electron devices as claimed in claim 26, is characterized in that,
Described single substrate electron device is also included in one or more integrated circuits that same described Semiconductor substrate builds, described integrated circuit and described sensing element, three-dimensional motion/between acceleration position indicator and light-emitting component, be respectively arranged with the connecting line carrying out control signal transmission and feedback data and receive;
Described integrated circuit comprises microprocessor, is processed described image sensing signal or motion-sensing signal by described microprocessor, to form the current signal exciting described light-emitting component luminescence.
28. 1 kinds of single substrate electron devices, is characterized in that, comprise:
A Semiconductor substrate; Described Semiconductor substrate is a silicon substrate with (111) crystal face;
The one or more three-dimensional motion based on MEMS (micro electro mechanical system)/acceleration position indicator built in same described Semiconductor substrate; Described three-dimensional motion/acceleration position indicator produces the motion-sensing signal matched with its position situation of movement;
One or more light-emitting component built in same described Semiconductor substrate, described light-emitting component comprises further:
A GaN crystal structure be positioned on (111) crystal face of described silicon substrate, described GaN crystal structure has a nonpolar plane, and is parallel to first plane of this nonpolar plane;
And be positioned at several luminescent layers in described first plane, described luminescent layer has at least one quantum well containing GaN, described quantum well is luminous by response current signal; Described current signal is formed according to described motion-sensing signal.
29. single substrate electron devices as claimed in claim 28, is characterized in that,
Described single substrate electron device is also included in one or more integrated circuits that same described Semiconductor substrate builds, described integrated circuit is provided with microprocessor, described motion-sensing signal is processed, forms the current signal exciting described light-emitting component luminescence.
30. single substrate electron devices as described in claim 28 or 29, it is characterized in that, described single substrate electron device is also included in one or more sensing elements that same described Semiconductor substrate builds, and described sensing element is the camera of CMOS (Complementary Metal Oxide Semiconductor) formula.
31. 1 kinds of single substrate electron devices, is characterized in that, comprise:
A Semiconductor substrate;
One or more light-emitting component built in same described Semiconductor substrate, described light-emitting component comes luminous by responding a current signal;
And one or more integrated circuit built in same described Semiconductor substrate, forms described current signal by described integrated circuit;
Wherein, described Semiconductor substrate is a silicon substrate with (111) crystal face;
Described light-emitting component comprises further:
A GaN crystal structure be positioned on (111) crystal face of described silicon substrate, described GaN crystal structure has a nonpolar plane, and is parallel to first plane of this nonpolar plane;
And be positioned at several luminescent layers in described first plane, described luminescent layer has at least one quantum well containing GaN, described quantum well is luminous by the described current signal of response;
Described silicon substrate has the upper surface that is positioned at (100) crystal face of this silicon substrate; One or more groove type is formed in described upper surface, and a part for described groove is restricted to described (111) crystal face of silicon substrate.
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| WO2015149331A1 (en) | 2014-04-03 | 2015-10-08 | 台湾超微光学股份有限公司 | Spectrometer, manufacturing method for waveguide of spectrometer and structure thereof |
| KR101532557B1 (en) * | 2014-05-09 | 2015-06-30 | 부경대학교 산학협력단 | LED chip with built-in hybrid sensor and maunfacturing method thereof |
| CN104600149B (en) * | 2015-01-28 | 2017-03-01 | 中国科学院微电子研究所 | Optical detection implantable sensor, manufacturing method thereof and control system thereof |
| US11011555B2 (en) | 2016-10-12 | 2021-05-18 | Shaoher Pan | Fabricating integrated light-emitting pixel arrays for displays |
| US10467952B2 (en) | 2016-10-12 | 2019-11-05 | Shaoher Pan | Integrated light-emitting diode arrays for displays |
| CN106652809B (en) * | 2016-10-19 | 2020-11-06 | 矽照光电（厦门）有限公司 | Light-emitting diode integrated display device and manufacturing method thereof |
| US10445048B2 (en) | 2016-12-30 | 2019-10-15 | Shaoher Pan | Larger displays formed by multiple integrated LED array micro-displays |
| US10437402B1 (en) | 2018-03-27 | 2019-10-08 | Shaoher Pan | Integrated light-emitting pixel arrays based devices by bonding |
| US10325894B1 (en) | 2018-04-17 | 2019-06-18 | Shaoher Pan | Integrated multi-color light-emitting pixel arrays based devices by bonding |
| US11011669B2 (en) | 2019-10-14 | 2021-05-18 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices |
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