CN102750997A - X射线波导 - Google Patents
X射线波导 Download PDFInfo
- Publication number
- CN102750997A CN102750997A CN2012101110137A CN201210111013A CN102750997A CN 102750997 A CN102750997 A CN 102750997A CN 2012101110137 A CN2012101110137 A CN 2012101110137A CN 201210111013 A CN201210111013 A CN 201210111013A CN 102750997 A CN102750997 A CN 102750997A
- Authority
- CN
- China
- Prior art keywords
- ray
- periodic
- core district
- periodic structure
- guided mode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000000737 periodic effect Effects 0.000 claims abstract description 235
- 239000000463 material Substances 0.000 claims abstract description 105
- 239000013598 vector Substances 0.000 claims abstract description 45
- 230000014509 gene expression Effects 0.000 claims description 7
- 239000013335 mesoporous material Substances 0.000 claims description 4
- 238000005253 cladding Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 49
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 30
- 239000000758 substrate Substances 0.000 description 26
- 229910052721 tungsten Inorganic materials 0.000 description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 239000010937 tungsten Substances 0.000 description 22
- 239000010410 layer Substances 0.000 description 19
- 238000010586 diagram Methods 0.000 description 16
- 238000000059 patterning Methods 0.000 description 16
- 239000004094 surface-active agent Substances 0.000 description 16
- 230000005684 electric field Effects 0.000 description 14
- 229910052809 inorganic oxide Inorganic materials 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 125000000217 alkyl group Chemical group 0.000 description 10
- 238000009826 distribution Methods 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 10
- 230000005465 channeling Effects 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 8
- 229920000151 polyglycol Polymers 0.000 description 8
- 239000010695 polyglycol Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000012141 concentrate Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 150000002894 organic compounds Chemical class 0.000 description 7
- 230000002209 hydrophobic effect Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000011368 organic material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 230000005672 electromagnetic field Effects 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- -1 polyethylene Polymers 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000002202 Polyethylene glycol Substances 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000002671 adjuvant Substances 0.000 description 4
- 150000005215 alkyl ethers Chemical class 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 125000001165 hydrophobic group Chemical group 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 4
- 239000012044 organic layer Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 238000003980 solgel method Methods 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000002563 ionic surfactant Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011022 opal Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/067—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators using surface reflection, e.g. grazing incidence mirrors, gratings
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-093068 | 2011-04-19 | ||
| JP2011093068A JP2012226081A (ja) | 2011-04-19 | 2011-04-19 | X線導波路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102750997A true CN102750997A (zh) | 2012-10-24 |
Family
ID=46149134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101110137A Pending CN102750997A (zh) | 2011-04-19 | 2012-04-16 | X射线波导 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20120269327A1 (enExample) |
| EP (1) | EP2515312A3 (enExample) |
| JP (1) | JP2012226081A (enExample) |
| CN (1) | CN102750997A (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5864945B2 (ja) * | 2010-09-02 | 2016-02-17 | キヤノン株式会社 | X線導波路 |
| JP2013036893A (ja) * | 2011-08-09 | 2013-02-21 | Canon Inc | X線光学系 |
| US20130064352A1 (en) * | 2011-09-09 | 2013-03-14 | Canon Kabushiki Kaisha | X-ray waveguide, process of producing x-ray waveguide, and x-ray guiding system |
| JP2013064628A (ja) * | 2011-09-16 | 2013-04-11 | Canon Inc | X線導波路システム |
| US20140294158A1 (en) * | 2013-03-26 | 2014-10-02 | Canon Kabushiki Kaisha | X-ray waveguide |
| US10101529B2 (en) | 2013-12-11 | 2018-10-16 | Empire Technology Development Llc | Preparation and usage of optical waveguides |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967299A (zh) * | 2005-11-14 | 2007-05-23 | 佳能株式会社 | 波导以及包括该波导的装置 |
| US20080285125A1 (en) * | 2007-05-18 | 2008-11-20 | Fujifilm Manufacturing U.S.A. Inc. | Optical panel for front projection under ambient lighting conditions |
| KR20100100199A (ko) * | 2009-03-05 | 2010-09-15 | 단국대학교 산학협력단 | 플라즈몬 광을 이용한 엑스선 도파로 제조방법 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56104300A (en) * | 1980-01-25 | 1981-08-19 | Tokyo Shibaura Electric Co | X ray waveguide and x ray diffraction device using same |
| JP3923180B2 (ja) * | 1998-04-14 | 2007-05-30 | 祐司 松浦 | X線用光学素子およびその製造方法 |
| US6788865B2 (en) * | 2000-03-03 | 2004-09-07 | Nippon Telegraph And Telephone Corporation | Polarization maintaining optical fiber with improved polarization maintaining property |
| US7260300B2 (en) * | 2003-03-04 | 2007-08-21 | Nippon Sheet Glass Company, Limited | Waveguide element using photonic crystal |
| CN1761897A (zh) * | 2003-03-04 | 2006-04-19 | 日本板硝子株式会社 | 使用光子晶体的波导元件 |
| US7231123B2 (en) * | 2003-12-26 | 2007-06-12 | Canon Kabushiki Kaisha | Photonic crystal optical element and manufacturing method therefor |
| JP2005258406A (ja) * | 2003-12-26 | 2005-09-22 | Canon Inc | 光素子及びその製造方法 |
| JP5864892B2 (ja) * | 2010-06-02 | 2016-02-17 | キヤノン株式会社 | X線導波路 |
| JP5864945B2 (ja) * | 2010-09-02 | 2016-02-17 | キヤノン株式会社 | X線導波路 |
-
2011
- 2011-04-19 JP JP2011093068A patent/JP2012226081A/ja active Pending
-
2012
- 2012-03-29 EP EP12162104.9A patent/EP2515312A3/en not_active Withdrawn
- 2012-04-10 US US13/443,054 patent/US20120269327A1/en not_active Abandoned
- 2012-04-16 CN CN2012101110137A patent/CN102750997A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1967299A (zh) * | 2005-11-14 | 2007-05-23 | 佳能株式会社 | 波导以及包括该波导的装置 |
| US20080285125A1 (en) * | 2007-05-18 | 2008-11-20 | Fujifilm Manufacturing U.S.A. Inc. | Optical panel for front projection under ambient lighting conditions |
| KR20100100199A (ko) * | 2009-03-05 | 2010-09-15 | 단국대학교 산학협력단 | 플라즈몬 광을 이용한 엑스선 도파로 제조방법 |
Non-Patent Citations (1)
| Title |
|---|
| F.PFEIFFER ET AL.: "X-ray waveguides with multiple guiding layers", 《PHYSICAL REVIEW B》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2515312A2 (en) | 2012-10-24 |
| US20120269327A1 (en) | 2012-10-25 |
| JP2012226081A (ja) | 2012-11-15 |
| EP2515312A3 (en) | 2014-11-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102750997A (zh) | X射线波导 | |
| JP5864892B2 (ja) | X線導波路 | |
| JP5783785B2 (ja) | X線導波路 | |
| EP2609599B1 (en) | X-ray waveguide | |
| US8611503B2 (en) | X-ray waveguide | |
| US20130156162A1 (en) | X-ray waveguide and x-ray waveguide system | |
| US20130142312A1 (en) | X-ray waveguide and x-ray waveguide system | |
| JP2013137307A (ja) | X線導波路及びx線導波システム | |
| US20130039476A1 (en) | X-ray optical system | |
| US20130051534A1 (en) | X-ray waveguide and x-ray waveguide system | |
| US20140241509A1 (en) | Mesoporous structured material, x-ray waveguide, and method of fabricating mesoporous structured material | |
| US20140376699A1 (en) | X ray waveguide system | |
| JP2014209107A (ja) | X線導波路 | |
| JP2012237718A (ja) | X線ホログラフィ光源素子及びそれを用いたx線ホログラフィシステム | |
| JP2013057628A (ja) | X線導波路の製造方法 | |
| JP2013057878A (ja) | X線導波路及びx線導波システム | |
| JP2013057879A (ja) | X線導波路及びx線導波システム | |
| JP2013050334A (ja) | エックス線導波路およびその製造方法 | |
| JP2013117445A (ja) | X線導波路及びx線導波システム | |
| JP2014215175A (ja) | X線導波路 | |
| JP2013024630A (ja) | X線光学システム |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121024 |