CN102749779A - Pixel array substrate, display panel, contact window structure and manufacturing method thereof - Google Patents
Pixel array substrate, display panel, contact window structure and manufacturing method thereof Download PDFInfo
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- CN102749779A CN102749779A CN2012102595169A CN201210259516A CN102749779A CN 102749779 A CN102749779 A CN 102749779A CN 2012102595169 A CN2012102595169 A CN 2012102595169A CN 201210259516 A CN201210259516 A CN 201210259516A CN 102749779 A CN102749779 A CN 102749779A
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- 239000000758 substrate Substances 0.000 title claims abstract description 81
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004020 conductor Substances 0.000 claims abstract description 72
- 239000000463 material Substances 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 20
- 238000009413 insulation Methods 0.000 claims description 266
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 31
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 20
- 229910021529 ammonia Inorganic materials 0.000 claims description 20
- 229910000077 silane Inorganic materials 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 19
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000000750 progressive effect Effects 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- -1 silicon nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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Abstract
The invention provides a pixel array substrate, a display panel, a contact window structure and a manufacturing method thereof. The contact structure includes a first conductive layer, a first insulating layer, a second insulating layer and a second conductive layer. The first insulating layer covers the first conductor layer and a substrate and has a first contact window. The second insulating layer covers the first insulating layer and has a second contact window. The second conductor layer covers the first contact window and the second contact window and contacts the part of the first conductor layer exposed to the first contact window. The first insulating layer and the second insulating layer are made of different materials, and the etching rate of the first insulating layer is greater than that of the second insulating layer for the same etching solution. The etching rate of the portion of the second insulating layer close to the first insulating layer is greater than the etching rate of the portion of the second insulating layer far from the first insulating layer. In summary, the invention can improve the yield of the contact window structure, and ensure the integrity of the subsequently formed material layer, thereby improving the reliability of the product.
Description
Technical field
The present invention relates to a kind of image element array substrates, display panel and contact structure and manufacturing approach thereof, relate in particular to the good image element array substrates of a kind of yield, display panel, contact structure and manufacturing approach thereof.
Background technology
In semiconductor technology, often need in as the insulation course of isolating, form contact hole (Contact Window) structure, so as to two conductive layers about connecting, or connect the semiconductor-based end and low layer conductive layer.
Fig. 1 is a kind of known contact structure.For making first conductive layer 140 and second conductive layer 170 can do electric connection, on first conductive layer 140, cover in regular turn after first insulation course 150 and second insulation course 160, can produce contact hole 100A with etching mode.Afterwards, cover upward second layer conductive layer 170 again.Yet first insulation course 150 and second insulation course 160 are made up of different materials, therefore in etch process first insulation course 150 be etched the be etched speed of speed greater than second insulation course 160.Thus, because first insulation course 150 is etched very fast, second insulation course 160 that causes covering on it has part not to be etched as yet, and this part can be suspended on first insulation course, 150 tops.Therefore, second conductive layer 170 of follow-up formation can't intactly cover contact hole 100A, and the fiduciary level of second conductive layer 170 is had problems.
In addition, follow-up other two conductive layers and the layer insulating of may covering again of second conductive layer 170 is with as electric capacity.But the suspending part branch of second insulation course 160 makes the insulation course in the follow-up covering produce the same unsettled problem, causes as the upper/lower electrode of electric capacity and two conductive layer conductings that should mutual insulating, finally makes condenser failure.
Summary of the invention
In order to overcome the defective of prior art, the present invention provides a kind of contact structure, can solve the wherein unsettled problem of insulation course.
The present invention provides a kind of image element array substrates and display panel, can solve the not good problem of yield.
The present invention provides a kind of manufacturing approach of contact structure, can solve the wherein unsettled problem of insulation course.
The present invention proposes a kind of contact structure, comprises one first conductor layer, one first insulation course, one second insulation course and one second conductor layer.First conductor layer is disposed on the substrate.First insulation course covers first conductor layer and substrate, and has one first contact hole.Wherein the part of first conductor layer is exposed to first contact hole.Second insulation course covers first insulation course, and has one second contact hole, and wherein first contact hole is exposed to second contact hole.The material of first insulation course is different from the material of second insulation course.For same etch liquid, first insulation course be etched the be etched speed of speed greater than second insulation course, second insulation course is etched speed greater than the be etched speed of second insulation course away from the part of first insulation course near the part of first insulation course.Second conductor layer covers first contact hole and second contact hole, and contacts the part that first conductor layer is exposed to first contact hole.
The present invention proposes a kind of image element array substrates, and this image element array substrates comprises aforesaid contact structure.
The present invention proposes a kind of display panel, comprises a subtend substrate, a display medium and aforesaid image element array substrates.Display medium is disposed between subtend substrate and the image element array substrates.
In an embodiment of the present invention, the material of first insulation course of above-mentioned contact structure is a monox.
In an embodiment of the present invention, the material of second insulation course of above-mentioned contact structure is a silicon nitride, and second insulation course near the nitrogen silicon of the part of first insulation course than greater than the nitrogen silicon ratio of second insulation course away from the part of first insulation course.
In an embodiment of the present invention, in the above-mentioned contact structure, wherein for same etch liquid, second insulation course is from being gradual change near the part of first insulation course to the speed that is etched away from the part of first insulation course.
In an embodiment of the present invention, in the above-mentioned contact structure, wherein for same etch liquid, second insulation course is from being two phase change near the part of first insulation course to the speed that is etched away from the part of first insulation course.
In an embodiment of the present invention, also comprise one first transparency conducting layer, one second transparency conducting layer and one the 3rd insulation course in the above-mentioned contact structure.First transparency conducting layer covers and contacts second conductor layer.The 3rd insulation course is disposed between first transparency conducting layer and second transparency conducting layer, to form an electric capacity.
In an embodiment of the present invention, above-mentioned image element array substrates also comprises a plurality of pixel drive unit.Each pixel drive unit comprises a pixel electrode and a subtend electrode.Pixel electrode has a plurality of first strip patterns, and counter electrode has a plurality of second strip patterns, and first strip pattern and second strip pattern are alternately arranged.Counter electrode and pixel electrode are electrically insulated each other.
In an embodiment of the present invention, the pixel electrode of the pixel drive unit of above-mentioned image element array substrates and counter electrode are positioned on the same plane.
In an embodiment of the present invention, the pixel electrode of the pixel drive unit of above-mentioned image element array substrates and counter electrode are positioned on the Different Plane.
In an embodiment of the present invention, above-mentioned image element array substrates also comprises a plurality of pixel drive unit, and each pixel drive unit comprises a pixel electrode and a subtend electrode.Pixel electrode has a plurality of first strip patterns and is positioned on the same plane, and counter electrode is positioned at pixel electrode below, and pixel electrode and counter electrode are electrically insulated each other.
The present invention proposes the manufacturing approach of a contact structure, comprises the following steps.At first, form one first conductor layer on a substrate.Then form one first insulation course to cover first conductor layer and substrate.Afterwards, form one second insulation course to cover first insulation course.Wherein, the material of first insulation course is different from the material of second insulation course.For same etch liquid, first insulation course be etched the be etched speed of speed greater than second insulation course.In second insulation course, be etched speed greater than the speed that is etched away from the part of first insulation course near the part of first insulation course.After forming first insulation course and second insulation course, follow etching first insulation course and second insulation course, forming one first contact hole in first insulation course, and form one second contact hole in second insulation course.Wherein, the part of first conductor layer is exposed to first contact hole, and first contact hole is exposed to second contact hole.At last, form one second conductor layer covering first contact hole and second contact hole, and contact the part that first conductor layer is exposed to first contact hole.
In an embodiment of the present invention; In the manufacturing approach of above-mentioned contact structure; The method that forms second insulation course comprises uses silane and ammonia to carry out chemical vapor deposition method, and in the process of carrying out chemical vapor deposition method, turns down the ratio of ammonia to silane.
In an embodiment of the present invention, in the manufacturing approach of above-mentioned contact structure, when carrying out the process of chemical vapor deposition method, the ammonia during leading portion is seven to one to the ratio of silane, and the ammonia during back segment is three to one to the ratio of silane.
In an embodiment of the present invention, in the manufacturing approach of above-mentioned contact structure, carry out in the process of chemical vapor deposition method, turning down ammonia is progressive turning down to the mode of the ratio of silane.
In an embodiment of the present invention, in the manufacturing approach of above-mentioned contact structure, the method for etching first insulation course and second insulation course comprises that carrying out dry-etching earlier carries out Wet-type etching again.
In an embodiment of the present invention, the manufacturing approach of above-mentioned contact structure also comprises after forming this second conductor layer and carries out the following step.Form one first transparency conducting layer to cover and to contact second conductor layer.Form one the 3rd insulation course to cover first transparency conducting layer.Form one second transparency conducting layer on the 3rd insulation course, to form an electric capacity.
Based on above-mentioned, in image element array substrates of the present invention, display panel, contact structure and manufacturing approach thereof, second insulation course of contact structure near the part of first insulation course be etched speed and first insulation course is comparatively close.So can improve the yield of contact structure.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and conjunction with figs. elaborates as follows.
Description of drawings
Fig. 1 is the synoptic diagram of known a kind of contact structure.
Fig. 2 is the diagrammatic cross-section according to a kind of display panel of the first embodiment of the present invention.
Fig. 3 is the local top view of the image element array substrates of Fig. 2.
Fig. 4 is the sectional view of the image element array substrates of Fig. 3 along AA ' line.
Fig. 5 A is the section schematic flow sheet of manufacturing approach of the contact structure of Fig. 4 to Fig. 5 F.
Fig. 6 is the diagrammatic cross-section according to a kind of display panel of the second embodiment of the present invention.
Fig. 7 is the diagrammatic cross-section according to a kind of display panel of the third embodiment of the present invention.
Fig. 8 is the local top view of the image element array substrates of Fig. 7.
Wherein, description of reference numerals is following:
100A: contact hole
100,231: contact structure
110,2311: substrate
120: cushion
130,2319: the three insulation courses
140,2316: the first conductor layers
150,2315: the first insulation courses
160,2317: the second insulation courses
170,2318: the second conductor layers
200,300,400: display panel
210: the subtend substrate
220: display medium
230,330,430: image element array substrates
2312: the first cushions
2313: the second cushions
2314: the four insulation courses
2315a: first contact hole
2317a: second contact hole
231a: first transparency conducting layer
231b: second transparency conducting layer
232,432: pixel drive unit
2321,3321,4321: pixel electrode
2321a, 4321a: first strip pattern
2322,3322,4322: counter electrode
2322a: second strip pattern
Embodiment
Fig. 2 is the diagrammatic cross-section according to a kind of display panel of the first embodiment of the present invention.The clipped element is so that drawing is clear among Fig. 2.Please earlier with reference to figure 2.Display panel 200 comprises a subtend substrate 210, a display medium 220, an image element array substrates 230.Display medium 220 for example is a liquid crystal molecule, is disposed between subtend substrate 210 and the image element array substrates 230.Subtend substrate 210 for example is a colored filter, and it has the colored optical filtering substrates of color filter films (not shown among Fig. 2) such as redness, green and blueness or colourless transparent glass substrate.
Fig. 3 is the local top view of the image element array substrates of Fig. 2.Fig. 4 is the sectional view of the image element array substrates of Fig. 3 along AA ' line.As shown in Figure 3, image element array substrates 230 comprises a contact structure 231.Please follow with reference to figure 4, this contact structure 231 comprises one first conductor layer 2316, one first insulation course 2315, one second insulation course 2317 and one second conductor layer 2318.First conductor layer 2316 is disposed on the substrate 2311.First insulation course 2315 covers first conductor layer 2316 and substrate 2311, and has one first contact hole 2315a.Wherein, the part of first conductor layer 2316 is exposed to the first contact hole 2315a.Second insulation course 2317 covers first insulation course 2315, and has one second contact hole 2317a.The first contact hole 2315a is exposed to the second contact hole 2317a.Second conductor layer 2318 covers the first contact hole 2315a and the second contact hole 2317a, and contacts the part that first conductor layer 2316 is exposed to the first contact hole 2315a.
The material of first insulation course 2315 is different with the material of second insulation course 2317.For same etch liquid, first insulation course 2315 be etched the be etched speed of speed greater than second insulation course 2317.In second insulation course 2317, be etched speed greater than the be etched speed of second insulation course 2317 away from the part of first insulation course 2315 near the part of first insulation course 2315.In other words, with respect to the be etched speed of second insulation course 2317 away from the part of first insulation course 2315, second insulation course 2317 near the part of first insulation course 2315 be etched speed can be relatively near the speed that is etched of first insulation course 2315.Therefore; Behind etching first insulation course 2315 and second insulation course 2317; Can be comparatively continuous after the intersection of first insulation course 2315 and second insulation course 2317 is etched; Second insulation course 2317 that reduces part is suspended on the chance of first insulation course, 2315 tops, guarantees that second conductor layer 2318 is complete and covers the first contact hole 2315a and the second contact hole 2317a continuously.
In the present embodiment, the material of first insulation course 2315 is monox (SiOx), and the material of second insulation course 2317 is silicon nitride (SiNx), but the present invention is not as limit.Second insulation course 2317 compares greater than the nitrogen silicon ratio of second insulation course 2317 away from the part of first insulation course 2315 near the nitrogen silicon of the part of first insulation course 2315.Therefore; When first insulation course 2315 and second insulation course 2317 being carried out etching with same etch liquid; Though the speed that is etched of first insulation course 2315 is greater than second insulation course 2317; But the speed that is etched away from the part of first insulation course 2315 is greater than the speed that is etched near the part of first insulation course 2315, thus near the rate that is etched of the part of first insulation course 2315 with first insulation course 2315 to be etched speed close.So, can obtain first comparatively continuous contact hole 2315a of slope variation and the section profile of the second contact hole 2317a after the etching.The employed etching solution of present embodiment for example is hydrofluorite (HF acid).
In the present embodiment, for same etch liquid, second insulation course 2317 is from being two phase change near the part of first insulation course 2315 to the speed that is etched away from the part of first insulation course 2315.In another embodiment, for same etch liquid, second insulation course 2317 is from being gradual change near the part of first insulation course 2315 to the speed that is etched away from the part of first insulation course 2315.Certainly, the speed that is etched of second insulation course 2317 also can be the above variations of three stages.
The contact structure 231 of present embodiment also comprises one first transparency conducting layer 231a, one second transparency conducting layer 231b and one the 3rd insulation course 2319.The first transparency conducting layer 231a covers and contacts second conductor layer 2318; The 3rd insulation course 2319 is disposed between the first transparency conducting layer 231a and the second transparency conducting layer 231b, between the first transparency conducting layer 231a and the second transparency conducting layer 231b, to form an electric capacity.Because second conductor layer 2318 of present embodiment can be complete and cover the first contact hole 2315a and the second contact hole 2317a continuously, so the first follow-up transparency conducting layer 231a and the second transparency conducting layer 231b are electrically insulated by the 3rd insulation course 2319 really the time.So, can improve the yield of formed electric capacity.
In the present embodiment, can there be the other materials layer to exist between the substrate 2311 and first conductive layer 2316.Also comprise one first cushion 2312, one second cushion 2313 and one the 4th insulation course 2314 between the substrate 2311 and first conductive layer 2316 in regular turn.The material of first cushion 2312 for example is a monox (SiOx), and the material of second cushion 2313 for example is a silicon nitride (SiNx).First cushion 2312 and second cushion 2313 can prevent that diffusion of contaminants that substrate 2311 contains is to the other materials layer on upper strata and cause damage.2314 of the 4th insulation courses that are configured under first conductive layer 2316 can provide insulation effect, and first conductive layer 2316 can be insulated with other conductive materials of below.
Fig. 5 A is the section schematic flow sheet of manufacturing approach of the contact structure of Fig. 4 to Fig. 5 F.Please be earlier with reference to figure 5A, on substrate 2311, form first cushion 2312, second cushion 2313 and the 4th insulation course 2314 in regular turn.The material of substrate 2311 can be glass, quartz or other similar materials.The method that forms this three-decker can be that (Chemical Vapor Deposition CVD), but is not limited to this to chemical vapour deposition technique, also can use other technology mode that is fit to, and the present invention does not limit this.
Then please refer to Fig. 5 B, forming first conductor layer, 2316, the first conductor layers 2316 is pattern structure, on the 4th insulation course 2314.Then, shown in Fig. 5 C, form one first insulation course 2315 to cover first conductor layer 2316 and substrate 2311.Please refer to Fig. 5 D again, form one second insulation course 2317 to cover first insulation course 2315.Wherein, first insulation course 2315 and second insulation course 2317 can make first conductor layer 2316 and other conductor layers of follow-up formation be electrically insulated.In addition, the material of first insulation course 2315 is different from the material of second insulation course 2317.For same etch liquid, first insulation course 2315 be etched the be etched speed of speed greater than second insulation course 2317.Second insulation course 2317 is etched speed greater than the be etched speed of second insulation course 2317 away from the part of first insulation course 2315 near the part of first insulation course 2315.
Please follow 5E with reference to figure, in the step of Fig. 5 E, etching first insulation course 2315 and second insulation course 2317.In this step, can etch one first contact hole 2315a at first insulation course 2315, and etch one second contact hole 2317a at second insulation course 2317.This first contact hole 2315a can be exposed to the second contact hole 2317a.First insulation course 2315 after the etching and second insulation course 2317 can let the part of first conductor layer 2316 be exposed to the first contact hole 2315a.
Then, please refer to Fig. 5 F, behind etching step, form one second conductor layer 2318 to cover the first contact hole 2315a and the second contact hole 2317a.This second conductor layer 2318 can contact the part that aforementioned first conductor layer 2316 is exposed to the first contact hole 2315a.Therefore, second conductor layer 2318 can produce electric connection with the part that first conductor layer 2316 contacts.
In the present embodiment, the material of first insulation course 2315 is a monox, can use chemical vapor deposition method to prepare.The material of second insulation course 2317 is silicon nitrides, so available silane (SiH
4) and ammonia (NH
3) carry out chemical vapor deposition method and form silicon nitride.Silane provides the source of silicon in the silicon nitride, and ammonia provides the source of nitrogen in the silicon nitride.In order to make second insulation course 2317 be etched speed greater than the be etched speed of second insulation course 2317 away from the part of first insulation course 2315 near the part of first insulation course 2315; Can be in the process of carrying out chemical vapor deposition method; Gradually turn down the ratio of ammonia, the nitrogen silicon of the silicon nitride layer of row in the chemical vapor deposition method is diminished than (N/Si) gradually silane.In the present embodiment, the ammonia of deposition leading portion is adjusted into seven to one to the ratio of silane, and the ammonia during back segment is adjusted into three to one to the ratio of silane.
Because second insulation course 2317 is to cover on first insulation course 2315 in the deposition process, so in the technology, the leading portion ammonia to the ratio of silane be that seven to one formed silicon nitrides (nitrogen silicon is than big) can deposition than near first insulation course 2315.The back segment ammonia is three to one formed silicon nitrides (nitrogen silicon is than little) to the ratio of silane, can then be deposited on the silicon nitride of leading portion deposition.Therefore in second insulation course 2317, near the nitrogen silicon of the part of first insulation course 2315 than can greater than in second insulation course 2317 away from the part of first insulation course 2315, and adjust the speed that is etched of second insulation course 2317 by this.
The adjustment ammonia makes the silicon nitride of deposition have different nitrogen silicon ratios to the ratio of silane in the technology, can make in the subsequent, in second insulation course 2317 near the part of first insulation course 2315 can with first insulation course 2315 to be etched rate more close.In addition, in etching step, forming the mode of the second contact hole 2317a of the first contact hole 2315a and second insulation course 2317 of first insulation course 2315, can be to carry out dry-etching earlier, carries out Wet-type etching again.
Yet in the adjustment chemical vapor deposition method process, ammonia is not limited to said method to the mode of the ratio of silane.In another embodiment; Carry out in the process of chemical vapor deposition method; Turning down ammonia is to carry out with the progressive mode of turning down to the ratio of silane; This can reach equally make second insulation course 2317 near the nitrogen silicon of the part of first insulation course 2315 than can be greater than the nitrogen silicon ratio of second insulation course 2317 away from the part of first insulation course 2315, make second insulation course 2317 in the subsequent near the rate that is etched of the part of first insulation course 2315 than its away from part big.
Please again with reference to figure 4, in the present embodiment, form after second conductor layer 2318 via the step of Fig. 5 F, also can form one first transparency conducting layer 231a to cover and to contact second conductor layer 2318.Then, form one the 3rd insulation course 2319 again and cover on the first transparency conducting layer 231a, form one second transparency conducting layer 231b subsequently on the 3rd insulation course 2319.The first transparency conducting layer 231a and the second transparency conducting layer 231b can form an electric capacity.By Fig. 5 A to the preparation flow of Fig. 5 F and cooperate above-mentioned formed contact structure 231 structures of step that form the first transparency conducting layer 231a, the 3rd insulation course 2319 and the second transparency conducting layer 231b with as shown in Figure 4.
Please follow with reference to figure 2 and Fig. 3.The image element array substrates 230 of the display panel 200 of present embodiment also comprises a plurality of pixel drive unit 232, among Fig. 3 only schematically illustrated one of them.Each pixel drive unit 232 comprises a pixel electrode 2321 and a subtend electrode 2322.Pixel electrode 2321 has a plurality of first strip pattern 2321a.Counter electrode 2322 has a plurality of second strip pattern 2322a.The first strip pattern 2321a and the second strip pattern 2322a present alternately arrangement, and counter electrode 2322 is electrically insulated with pixel electrode 2321 each other.In other words; The panel 200 that shows of present embodiment is that general alleged copline is switched (In-Plane Switching; IPS) formula display panel, it is as shown in Figure 2 that those of ordinary skills also can do equivalent design alteration, and pixel electrode 2321 is positioned on the Different Plane with counter electrode 2322.
Please follow with reference to figure 6.Fig. 6 is the diagrammatic cross-section according to the display panel of the second embodiment of the present invention.Display panel 300 comprises a subtend substrate 210, a display medium 220, an image element array substrates 330.Because present embodiment is similar in fact with first embodiment so adopt identical label to represent identical or approximate element.In image element array substrates 330, used contact structure shown in Figure 4 231 equally.The main difference of present embodiment and aforementioned first embodiment is to be in the display panel 300 of present embodiment; Pixel electrode 3321 is positioned on the same plane with counter electrode 3322; Wherein said a plurality of counter electrode 3322 electrically connects with this first conductor layer 2316, second conductor layer 2318 and the first transparency conducting layer 231a, and the pixel electrode 3321 and the second transparency conducting layer 231b electrically connect.The display panel 300 of present embodiment also is a copline suitching type display panel.
Please again with reference to figure 7.Fig. 7 is the diagrammatic cross-section according to a kind of display panel of the third embodiment of the present invention.Fig. 8 is the local top view of the image element array substrates of Fig. 7.Display panel 400 comprises a subtend substrate 210, a display medium 220, an image element array substrates 430.Present embodiment is similar in fact with first embodiment so adopt identical label to represent identical or approximate element, and in image element array substrates 430, has used contact structure shown in Figure 4 231 equally.Please be simultaneously with reference to figure 7 and Fig. 8; Particularly; The main difference of present embodiment and aforementioned first embodiment is to be in the present embodiment; In the pixel drive unit 432 of the image element array substrates 430 of display panel 400, each pixel drive unit 432 comprises a pixel electrode 4321 and a subtend electrode 4322.Pixel electrode 4321 has a plurality of first strip pattern 4321a and the aforesaid first strip pattern 4321a is positioned on the same plane.Counter electrode 4322 is positioned at pixel electrode 4321 belows, and pixel electrode 4321 is electrically insulated with counter electrode 4322 each other.In other words, the display panel 400 of present embodiment with the limit switch (Fringe Field Switching, FFS) the formula display panel is that example describes, those of ordinary skills also can do the design alteration of equivalence.In addition, all similar about position configuration, preparation method and the material of other elements in the 3rd embodiment with first embodiment, therefore no longer give unnecessary details.
In sum, in contact structure of the present invention and the manufacturing approach thereof, second insulation course near the part of first insulation course to be etched speed close with first insulation course.So can avoid second insulation course and be suspended on etched first insulation course in below slowly, and then guarantee the integrality of the material layer of follow-up formation, improve the fiduciary level of product because be etched speed.This contact structure can be applicable on the image element array substrates, and can aforementioned image element array substrates be used in the middle of the display panel.
Though the present invention discloses as above with embodiment; Right its is not in order to limit the present invention; Any those of ordinary skills; Do not breaking away from the spirit and scope of the present invention, can do a little change and retouching, so protection scope of the present invention is as the criterion when looking appended the scope that claim defined structure of the present invention.
Claims (32)
1. contact structure comprises:
One first conductor layer is disposed on the substrate;
One first insulation course covers this first conductor layer and this substrate, and has one first contact hole, and wherein the part of this first conductor layer is exposed to this first contact hole;
One second insulation course; Cover this first insulation course, and have one second contact hole, wherein this first contact hole is exposed to this second contact hole; The material of this first insulation course is different from the material of this second insulation course; For same etch liquid, this first insulation course be etched the be etched speed of speed greater than this second insulation course, this second insulation course is etched speed greater than the be etched speed of this second insulation course away from the part of this first insulation course near the part of this first insulation course; And
One second conductor layer covers this first contact hole with this second contact hole and contact the part that this first conductor layer is exposed to this first contact hole.
2. contact structure as claimed in claim 1, wherein the material of this first insulation course is a monox.
3. contact structure as claimed in claim 2, wherein the material of this second insulation course is a silicon nitride, and this second insulation course near the nitrogen silicon of the part of this first insulation course than greater than the nitrogen silicon ratio of this second insulation course away from the part of this first insulation course.
4. contact structure as claimed in claim 1, wherein for same etch liquid, this second insulation course is from being gradual change near the part of this first insulation course to the speed that is etched away from the part of this first insulation course.
5. contact structure as claimed in claim 1, wherein for same etch liquid, this second insulation course is from being two phase change near the part of this first insulation course to the speed that is etched away from the part of this first insulation course.
6. contact structure as claimed in claim 1 also comprises:
One first transparency conducting layer covers and contacts this second conductor layer;
One second transparency conducting layer; And
One the 3rd insulation course is disposed between this first transparency conducting layer and this second transparency conducting layer, to form an electric capacity.
7. an image element array substrates comprises a contact structure, and wherein this contact structure comprises:
One first conductor layer is disposed on the substrate;
One first insulation course covers this first conductor layer and this substrate, and has one first contact hole, and wherein the part of this first conductor layer is exposed to this first contact hole;
One second insulation course; Cover this first insulation course, and have one second contact hole, wherein this first contact hole is exposed to this second contact hole; The material of this first insulation course is different from the material of this second insulation course; For same etch liquid, this first insulation course be etched the be etched speed of speed greater than this second insulation course, this second insulation course is etched speed greater than the be etched speed of this second insulation course away from the part of this first insulation course near the part of this first insulation course; And
One second conductor layer covers this first contact hole with this second contact hole and contact the part that this first conductor layer is exposed to this first contact hole.
8. image element array substrates as claimed in claim 7, wherein the material of this first insulation course is a monox.
9. image element array substrates as claimed in claim 8, wherein the material of this second insulation course is a silicon nitride, and this second insulation course near the nitrogen silicon of the part of this first insulation course than greater than the nitrogen silicon ratio of this second insulation course away from the part of this first insulation course.
10. image element array substrates as claimed in claim 7, wherein for same etch liquid, this second insulation course is from being gradual change near the part of this first insulation course to the speed that is etched away from the part of this first insulation course.
11. image element array substrates as claimed in claim 7, wherein for same etch liquid, this second insulation course is from being two phase change near the part of this first insulation course to the speed that is etched away from the part of this first insulation course.
12. image element array substrates as claimed in claim 7, wherein this contact structure also comprises:
One first transparency conducting layer covers and contacts this second conductor layer;
One second transparency conducting layer; And
One the 3rd insulation course is disposed between this first transparency conducting layer and this second transparency conducting layer, to form an electric capacity.
13. image element array substrates as claimed in claim 7; Also comprise a plurality of pixel drive unit; Each pixel drive unit comprises a pixel electrode and a subtend electrode, and said a plurality of pixel electrodes have a plurality of first strip patterns, and said a plurality of counter electrodes and said a plurality of pixel electrode are electrically insulated each other; Said a plurality of counter electrode has a plurality of second strip patterns, and said a plurality of first strip pattern and said a plurality of second strip pattern are alternately arranged.
14. image element array substrates as claimed in claim 13, wherein said a plurality of pixel electrodes and said a plurality of counter electrode are positioned on the same plane.
15. image element array substrates as claimed in claim 13, wherein said a plurality of pixel electrodes and said a plurality of counter electrode are positioned on the Different Plane.
16. image element array substrates as claimed in claim 7; Also comprise a plurality of pixel drive unit; Each pixel drive unit comprises a pixel electrode and a subtend electrode; Said a plurality of pixel electrode has a plurality of first strip patterns and is positioned on the same plane, and said a plurality of counter electrodes are positioned at said a plurality of pixel electrodes below, and said a plurality of pixel electrode and said a plurality of counter electrode are electrically insulated each other.
17. a display panel comprises:
One subtend substrate;
One display medium;
One image element array substrates comprises a contact structure, and wherein this display medium is disposed between this subtend substrate and this image element array substrates, and this contact structure comprises:
One first conductor layer is disposed on the substrate;
One first insulation course covers this first conductor layer and this substrate, and has one first contact hole, and wherein the part of this first conductor layer is exposed to this first contact hole;
One second insulation course; Cover this first insulation course, and have one second contact hole, wherein this first contact hole is exposed to this second contact hole; The material of this first insulation course is different from the material of this second insulation course; For same etch liquid, this first insulation course be etched the be etched speed of speed greater than this second insulation course, this second insulation course is etched speed greater than the be etched speed of this second insulation course away from the part of this first insulation course near the part of this first insulation course; And
One second conductor layer covers this first contact hole with this second contact hole and contact the part that this first conductor layer is exposed to this first contact hole.
18. display panel as claimed in claim 17, wherein the material of this first insulation course is a monox.
19. display panel as claimed in claim 18, wherein the material of this second insulation course is a silicon nitride, and this second insulation course near the nitrogen silicon of the part of this first insulation course than greater than the nitrogen silicon ratio of this second insulation course away from the part of this first insulation course.
20. display panel as claimed in claim 17, wherein for same etch liquid, this second insulation course is from being gradual change near the part of this first insulation course to the speed that is etched away from the part of this first insulation course.
21. display panel as claimed in claim 17, wherein for same etch liquid, this second insulation course is from being two phase change near the part of this first insulation course to the speed that is etched away from the part of this first insulation course.
22. display panel as claimed in claim 17, wherein this contact structure also comprises:
One first transparency conducting layer covers and contacts this second conductor layer;
One second transparency conducting layer; And
One the 3rd insulation course is disposed between this first transparency conducting layer and this second transparency conducting layer, to form an electric capacity.
23. display panel as claimed in claim 17; Wherein this image element array substrates also comprises a plurality of pixel drive unit; Each pixel drive unit comprises a pixel electrode and a subtend electrode, and said a plurality of pixel electrodes have a plurality of first strip patterns, and said a plurality of counter electrodes and said a plurality of pixel electrode are electrically insulated each other; Said a plurality of counter electrode has a plurality of second strip patterns, and said a plurality of first strip pattern and said a plurality of second strip pattern are alternately arranged.
24. display panel as claimed in claim 23, wherein said a plurality of pixel electrodes and said a plurality of counter electrode are positioned on the same plane.
25. display panel as claimed in claim 23, wherein said a plurality of pixel electrodes and said a plurality of counter electrode are positioned on the Different Plane.
26. display panel as claimed in claim 17; Wherein this image element array substrates also comprises a plurality of pixel drive unit; Each pixel drive unit comprises a pixel electrode and a subtend electrode; Said a plurality of pixel electrode has a plurality of first strip patterns and is positioned on the same plane; Said a plurality of counter electrode is positioned at said a plurality of pixel electrodes below, and said a plurality of pixel electrode is electrically insulated wherein said a plurality of counter electrodes and the electric connection of this first conductor layer each other with said a plurality of counter electrode.
27. the manufacturing approach of a contact structure comprises:
Form one first conductor layer on a substrate;
Form one first insulation course to cover this first conductor layer and this substrate;
Form one second insulation course to cover this first insulation course; Wherein the material of this first insulation course is different from the material of this second insulation course; For same etch liquid; This first insulation course be etched the be etched speed of speed greater than this second insulation course, this second insulation course is etched speed greater than the be etched speed of this second insulation course away from the part of this first insulation course near the part of this first insulation course;
This first insulation course of etching and this second insulation course; To form one first contact hole in this first insulation course; And form one second contact hole in this second insulation course, and wherein the part of this first conductor layer is exposed to this first contact hole, and this first contact hole is exposed to this second contact hole; And
Form one second conductor layer covering this first contact hole and this second contact hole, and contact the part that this first conductor layer is exposed to this first contact hole.
28. the manufacturing approach of contact structure as claimed in claim 27; The method that wherein forms this second insulation course comprises uses silane and ammonia to carry out chemical vapor deposition method, and in the process of carrying out chemical vapor deposition method, turns down the ratio of ammonia to silane.
29. the manufacturing approach of contact structure as claimed in claim 28 is wherein carried out in the process of chemical vapor deposition method, the ammonia during leading portion is seven to one to the ratio of silane, and the ammonia during back segment is three to one to the ratio of silane.
30. the manufacturing approach of contact structure as claimed in claim 28 is wherein carried out in the process of chemical vapor deposition method, turning down ammonia is progressive turning down to the mode of the ratio of silane.
31. the manufacturing approach of contact structure as claimed in claim 27, wherein the method for this first insulation course of etching and this second insulation course comprises that carrying out dry-etching earlier carries out Wet-type etching again.
32. the manufacturing approach of contact structure as claimed in claim 27 wherein also comprises after forming this second conductor layer:
Form one first transparency conducting layer to cover and to contact this second conductor layer;
Form one the 3rd insulation course to cover this first transparency conducting layer; And
Form one second transparency conducting layer on the 3rd insulation course, to form an electric capacity.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101118977 | 2012-05-28 | ||
| TW101118977A TWI489171B (en) | 2012-05-28 | 2012-05-28 | Pixel array substrate, display panel, contact window structure and manufacturing method thereof |
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| CN102749779A true CN102749779A (en) | 2012-10-24 |
| CN102749779B CN102749779B (en) | 2015-06-24 |
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Also Published As
| Publication number | Publication date |
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| TW201348805A (en) | 2013-12-01 |
| CN102749779B (en) | 2015-06-24 |
| TWI489171B (en) | 2015-06-21 |
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