TWI489171B - Pixel array substrate, display panel, contact window structure and manufacturing method thereof - Google Patents

Description

Pixel array substrate, display panel, contact window structure and manufacturing method thereof

The invention relates to a pixel array substrate, a display panel and a contact window structure and a manufacturing method thereof, and particularly relates to a pixel array substrate, a display panel, a contact window structure and a manufacturing method thereof.

In a semiconductor process, it is often necessary to form a contact window structure in an insulating layer as an isolation, thereby connecting the upper and lower conductive layers or connecting the semiconductor substrate and the lower conductive layer.

Figure 1 is a conventional contact window structure. In order to enable the first conductive layer 140 and the second conductive layer 170 to be electrically connected, after the first insulating layer 150 and the second insulating layer 160 are sequentially covered on the first conductive layer 140, a contact window is formed by etching. 100A. Thereafter, the second conductive layer 170 is overlaid. However, the first insulating layer 150 and the second insulating layer 160 are made of different materials, so the etch rate of the first insulating layer 150 is greater than the etch rate of the second insulating layer 160 in the etching process. As such, because the first insulating layer 150 is etched faster, a portion of the second insulating layer 160 overlying it is not yet etched, and this portion is suspended above the first insulating layer 150. Therefore, the subsequently formed second conductive layer 170 cannot completely cover the contact window 100A, causing problems in the reliability of the second conductive layer 170.

In addition, the second conductive layer 170 may be subsequently covered with another two conductive layers and an insulating layer as capacitors. However, the suspended portion of the second insulating layer 160 causes the same overhanging problem in the insulating layer on the subsequent cover. The two conductive layers that should be insulated from each other as the upper and lower electrodes of the capacitor are turned on, eventually causing the capacitor to fail.

The invention provides a contact window structure, which can solve the problem that the insulating layer is suspended.

The invention provides a pixel array substrate and a display panel, which can solve the problem of poor yield.

The invention provides a manufacturing method of a contact window structure, which can solve the problem that the insulating layer is suspended.

The invention provides a contact window structure comprising a first conductor layer, a first insulating layer, a second insulating layer and a second conductor layer. The first conductor layer is disposed on a substrate. The first insulating layer covers the first conductor layer and the substrate and has a first contact window. A portion of the first conductor layer is exposed to the first contact window. The second insulating layer covers the first insulating layer and has a second contact window, wherein the first contact window is exposed to the second contact window. The material of the first insulating layer is different from the material of the second insulating layer. For the same etchant, the etch rate of the first insulating layer is greater than the etch rate of the second insulating layer, and the etch rate of the portion of the second insulating layer adjacent to the first insulating layer is greater than the portion of the second insulating layer away from the first insulating layer The rate of being etched. The second conductor layer covers the first contact window and the second contact window and contacts a portion of the first conductor layer exposed to the first contact window.

The invention provides a pixel array substrate comprising the aforementioned contact window structure.

The invention provides a display panel comprising a pair of substrates, a display medium and the aforementioned pixel array substrate. The display medium is disposed between the opposite substrate and the pixel array substrate.

In an embodiment of the invention, the first insulating layer of the contact window structure is made of ruthenium oxide.

In an embodiment of the invention, the second insulating layer of the contact window structure is made of tantalum nitride, and the nitrogen nitride ratio of the portion of the second insulating layer adjacent to the first insulating layer is greater than the second insulating layer away from the first insulating layer. The ratio of nitrogen to bismuth of the portion of the layer.

In an embodiment of the invention, in the above contact structure, wherein the etching rate of the second insulating layer from the portion close to the first insulating layer to the portion away from the first insulating layer is a gradual change for the same etching liquid.

In an embodiment of the invention, in the above contact structure, wherein the etching rate of the second insulating layer from the portion close to the first insulating layer to the portion away from the first insulating layer is a two-stage change for the same etching liquid.

In an embodiment of the invention, the contact window structure further includes a first transparent conductive layer, a second transparent conductive layer and a third insulating layer. The first transparent conductive layer covers and contacts the second conductor layer. The third insulating layer is disposed between the first transparent conductive layer and the second transparent conductive layer to form a capacitor.

In an embodiment of the invention, the pixel array substrate further includes a plurality of pixel driving units. Each pixel driving unit includes a pixel electrode and a pair of electrodes. The pixel electrode has a plurality of first strip patterns, and the opposite electrode has a plurality of second strip patterns, and the first strip patterns and the second strip patterns are alternately arranged. The counter electrode and the pixel electrode are electrically insulated from each other.

In an embodiment of the invention, the pixel electrode of the pixel driving unit of the pixel array substrate is located on the same plane as the opposite electrode.

In an embodiment of the invention, the pixel electrode of the pixel driving unit of the pixel array substrate and the opposite electrode are located on different planes.

In an embodiment of the invention, the pixel array substrate further includes a plurality of pixel driving units, and each of the pixel driving units includes a pixel electrode and a pair of electrodes. The pixel electrode has a plurality of first strip patterns and is located on the same plane, and the opposite electrode is located under the pixel electrode, and the pixel electrode and the counter electrode are electrically insulated from each other.

The present invention proposes a method of fabricating a contact window structure comprising the following steps. First, a first conductor layer is formed on a substrate. A first insulating layer is then formed to cover the first conductor layer and the substrate. Thereafter, a second insulating layer is formed to cover the first insulating layer. The material of the first insulating layer is different from the material of the second insulating layer. For the same etchant, the etch rate of the first insulating layer is greater than the etch rate of the second insulating layer. In the second insulating layer, an etch rate of a portion close to the first insulating layer is greater than an etch rate of a portion away from the first insulating layer. After forming the first insulating layer and the second insulating layer, etching the first insulating layer and the second insulating layer to form a first contact window in the first insulating layer and forming a second contact window in the second insulating layer . Wherein a portion of the first conductor layer is exposed to the first contact window and the first contact window is exposed to the second contact window. Finally, a second conductor layer is formed to cover the first contact window and the second contact window and to contact the portion of the first conductor layer exposed to the first contact window.

In an embodiment of the invention, the method for manufacturing the above contact window structure The method of forming the second insulating layer includes performing a chemical vapor deposition process using decane and ammonia gas, and reducing the ratio of ammonia to decane during the chemical vapor deposition process.

In an embodiment of the present invention, in the manufacturing method of the contact window structure, when the chemical vapor deposition process is performed, the ratio of ammonia to decane in the front stage is seven to one, and the ammonia in the latter stage is on the decane. The ratio is three to one.

In an embodiment of the invention, in the method of manufacturing the contact window structure described above, the manner of lowering the ratio of ammonia to decane during the chemical vapor deposition process is progressively lower.

In an embodiment of the invention, in the method for fabricating a contact window structure, the method of etching the first insulating layer and the second insulating layer comprises first performing dry etching and then performing wet etching.

In an embodiment of the invention, the method for fabricating the contact window structure further includes the following steps after forming the second conductor layer. A first transparent conductive layer is formed to cover and contact the second conductor layer. A third insulating layer is formed to cover the first transparent conductive layer. A second transparent conductive layer is formed on the third insulating layer to form a capacitor.

Based on the above, in the pixel array substrate, the display panel, the contact window structure, and the method of fabricating the same according to the present invention, the second insulating layer of the contact window structure is etched at a portion closer to the first insulating layer than the first insulating layer. similar. This improves the yield of the contact window structure.

The above described features and advantages of the present invention will be more apparent from the following description.

2 is a cross-sectional view showing a display panel in accordance with a first embodiment of the present invention. Some of the elements are omitted in Fig. 2 to make the drawings clear. Please refer to Figure 2 first. The display panel 200 includes a pair of substrates 210, a display medium 220, and a pixel array substrate 230. The display medium 220 is, for example, liquid crystal molecules, and is disposed between the opposite substrate 210 and the pixel array substrate 230. The counter substrate 210 is, for example, a color filter having a color filter substrate (not shown in FIG. 2) such as red, green, and blue, or a colorless transparent glass substrate.

3 is a partial top view of the pixel array substrate of FIG. 2. Figure 4 is a cross-sectional view of the pixel array substrate of Figure 3 taken along line AA'. As shown in FIG. 3, the pixel array substrate 230 includes a contact window structure 231. Referring to FIG. 4 , the contact structure 231 includes a first conductor layer 2316 , a first insulating layer 2315 , a second insulating layer 2317 , and a second conductor layer 2318 . The first conductor layer 2316 is disposed on a substrate 2311. The first insulating layer 2315 covers the first conductor layer 2316 and the substrate 2311 and has a first contact window 2315a. Wherein a portion of the first conductor layer 2316 is exposed to the first contact window 2315a. The second insulating layer 2317 covers the first insulating layer 2315 and has a second contact window 2317a. The first contact window 2315a is exposed to the second contact window 2317a. The second conductor layer 2318 covers the first contact window 2315a and the second contact window 2317a and contacts a portion of the first conductor layer 2316 exposed to the first contact window 2315a.

The material of the first insulating layer 2315 is different from the material of the second insulating layer 2317. For the same etchant, the etch rate of the first insulating layer 2315 is greater than The etch rate of the second insulating layer 2317. In the second insulating layer 2317, the etch rate of the portion near the first insulating layer 2315 is greater than the etch rate of the portion of the second insulating layer 2317 away from the first insulating layer 2315. In other words, with respect to the etch rate of the portion of the second insulating layer 2317 away from the first insulating layer 2315, the etch rate of the portion of the second insulating layer 2317 close to the first insulating layer 2315 is relatively close to that of the first insulating layer 2315. rate. Therefore, after the first insulating layer 2315 and the second insulating layer 2317 are etched, the boundary between the first insulating layer 2315 and the second insulating layer 2317 is etched, and the second insulating layer 2317 is suspended first. The opportunity above the insulating layer 2315 ensures that the second conductor layer 2318 completely and continuously covers the first contact window 2315a and the second contact window 2317a.

In the present embodiment, the material of the first insulating layer 2315 is yttrium oxide (SiO _x ), and the material of the second insulating layer 2317 is tantalum nitride (SiN _x ), but the invention is not limited thereto. The nitrogen enthalpy ratio of the portion of the second insulating layer 2317 adjacent to the first insulating layer 2315 is greater than the enthalpy ratio of the portion of the second insulating layer 2317 away from the first insulating layer 2315. Therefore, when the first insulating layer 2315 and the second insulating layer 2317 are etched with the same etching liquid, although the etch rate of the first insulating layer 2315 is greater than the second insulating layer 2317, the portion away from the first insulating layer 2315 The etch rate is greater than the etch rate of the portion near the first insulating layer 2315, so the etch rate of the portion near the first insulating layer 2315 is close to the etch rate of the first insulating layer 2315. Thus, after etching, a cross-sectional profile of the first contact window 2315a and the second contact window 2317a whose slope changes are continuous can be obtained. The etching liquid used in this embodiment is, for example, hydrofluoric acid (HF acid).

In the present embodiment, for the same etching liquid, the etching rate of the second insulating layer 2317 from the portion close to the first insulating layer 2315 to the portion away from the first insulating layer 2315 is a two-stage change. In another embodiment, for the same etchant, the etch rate of the second insulating layer 2317 from the portion near the first insulating layer 2315 to the portion away from the first insulating layer 2315 is a gradual change. Of course, the etch rate of the second insulating layer 2317 may also be a three-stage or more change.

The contact window structure 231 of the embodiment further includes a first transparent conductive layer 231a, a second transparent conductive layer 231b, and a third insulating layer 2319. The first transparent conductive layer 231a covers and contacts the second conductive layer 2318. The third insulating layer 2319 is disposed between the first transparent conductive layer 231a and the second transparent conductive layer 231b to be transparent between the first transparent conductive layer 231a and the second transparent conductive layer 231a. A capacitor is formed between the conductive layers 231b. Since the second conductor layer 2318 of the embodiment can completely and continuously cover the first contact window 2315a and the second contact window 2317a, the subsequent first transparent conductive layer 231a and the second transparent conductive layer 231b can be confirmed by the third The insulating layer 2319 is electrically insulated. In this way, the yield of the formed capacitor can be improved.

In this embodiment, other material layers may exist between the substrate 2311 and the first conductive layer 2316. A first buffer layer 2312, a second buffer layer 2313 and a fourth insulating layer 2314 are sequentially arranged between the substrate 2311 and the first conductive layer 2316. The material of the first buffer layer 2312 is, for example, yttrium oxide (SiO _x ), and the material of the second buffer layer 2313 is, for example, tantalum nitride (SiN _x ). The first buffer layer 2312 and the second buffer layer 2313 prevent impurities contained in the substrate 2311 from diffusing to other material layers of the upper layer to cause damage. The fourth insulating layer 2314 disposed under the first conductive layer 2316 can provide an insulating effect to insulate the first conductive layer 2316 from other conductive materials below.

5A to 5F are schematic cross-sectional views showing a method of manufacturing the contact window structure of Fig. 4. Referring to FIG. 5A, first, a first buffer layer 2312, a second buffer layer 2313, and a fourth insulating layer 2314 are formed on the substrate 2311. The material of the substrate 2311 may be glass, quartz or the like. The method for forming the three-layer structure may be Chemical Vapor Deposition (CVD), but is not limited thereto, and other suitable processes may be used, and the present invention is not limited thereto.

Next, referring to FIG. 5B, a first conductor layer 2316 is formed. The first conductor layer 2316 is a patterned structure over the fourth insulating layer 2314. Next, as shown in FIG. 5C, a first insulating layer 2315 is formed to cover the first conductor layer 2316 and the substrate 2311. Referring to FIG. 5D again, a second insulating layer 2317 is formed to cover the first insulating layer 2315. The first insulating layer 2315 and the second insulating layer 2317 can electrically insulate the first conductor layer 2316 from other conductor layers formed subsequently. In addition, the material of the first insulating layer 2315 is different from the material of the second insulating layer 2317. For the same etchant, the etch rate of the first insulating layer 2315 is greater than the etch rate of the second insulating layer 2317. The etch rate of the portion of the second insulating layer 2317 adjacent to the first insulating layer 2315 is greater than the etch rate of the portion of the second insulating layer 2317 away from the first insulating layer 2315.

Referring next to FIG. 5E, in the step of FIG. 5E, the first insulating layer 2315 and the second insulating layer 2317 are etched. In this step, a first contact window 2315a is etched in the first insulating layer 2315, and a second insulating layer is formed. 2317 etches a second contact window 2317a. This first contact window 2315a is exposed to the second contact window 2317a. The etched first insulating layer 2315 and the second insulating layer 2317 expose a portion of the first conductor layer 2316 to the first contact window 2315a.

Next, referring to FIG. 5F, after the etching step, a second conductor layer 2318 is formed to cover the first contact window 2315a and the second contact window 2317a. The second conductor layer 2318 contacts the portion of the first conductor layer 2316 exposed to the first contact window 2315a. Therefore, the portion of the second conductor layer 2318 that is in contact with the first conductor layer 2316 can be electrically connected.

In the present embodiment, the material of the first insulating layer 2315 is yttrium oxide, which can be prepared by a chemical vapor deposition process. The material of the second insulating layer 2317 is tantalum nitride, so that a tantalum nitride can be formed by a chemical vapor deposition process using decane (SiH ₄ ) and ammonia (NH ₃ ). The decane provides a source of bismuth in the tantalum nitride, which provides a source of nitrogen in the tantalum nitride. In order to make the etch rate of the portion of the second insulating layer 2317 close to the first insulating layer 2315 greater than the portion of the second insulating layer 2317 away from the first insulating layer 2315, the CVD process may be performed during the chemical vapor deposition process. The ratio of ammonia to decane is gradually lowered, so that the ratio of nitrogen to bismuth (N/Si) of the tantalum nitride layer formed in the chemical vapor deposition process is gradually decreased. In the present embodiment, the ratio of ammonia gas to decane in the front stage of deposition is adjusted to seven to one, and the ratio of ammonia gas to decane in the latter stage is adjusted to three to one.

Since the second insulating layer 2317 is covered on the first insulating layer 2315 during the deposition process, the ratio of the ammonia gas to the decane in the front stage is seven to one, and the tantalum nitride (larger nitrogen to lanthanum ratio) is deposited in the process. Close to the first insulation layer 2315. The ratio of ammonia to decane in the latter stage is three to one, and the tantalum nitride (small nitrogen to nitrogen ratio) is formed on the tantalum nitride deposited in the previous stage. Therefore, in the second insulating layer 2317, the nitrogen enthalpy ratio of the portion close to the first insulating layer 2315 is larger than the portion of the second insulating layer 2317 remote from the first insulating layer 2315, and thereby the etched second insulating layer 2317 is etched. rate.

Adjusting the ratio of ammonia to decane in the process so that the deposited tantalum nitride has different ratios of nitrogen to bismuth, and the portion of the second insulating layer 2317 adjacent to the first insulating layer 2315 and the first insulating layer 2315 can be made in the subsequent etching step. The etch rate is similar. Further, in the etching step, the first contact window 2315a of the first insulating layer 2315 and the second contact window 2317a of the second insulating layer 2317 may be formed by first performing dry etching and then performing wet etching.

However, the manner in which the ratio of ammonia to decane is adjusted during the chemical vapor deposition process is not limited to the above method. In another embodiment, during the chemical vapor deposition process, the ratio of ammonia to decane is lowered in a progressively lowering manner, which also achieves the second insulating layer 2317 adjacent to the first insulating layer 2315. The enthalpy ratio of the portion of the second insulating layer 2317 away from the first insulating layer 2315 is greater than the nitriding ratio of the portion of the second insulating layer 2317 away from the first insulating layer 2315 in the subsequent etching step. The part that is far away is large.

Referring to FIG. 4 again, in the embodiment, after the second conductor layer 2318 is formed through the steps of FIG. 5F, a first transparent conductive layer 231a may be further formed to cover and contact the second conductor layer 2318. Then, a third insulating layer 2319 is formed over the first transparent conductive layer 231a, and then a second transparent conductive layer 231b is formed on the third insulating layer 2319. First transparent conductive layer 231a and the second transparent conductive layer 231b form a capacitor. The structure of the contact window structure 231 formed by the steps of the preparation process of FIGS. 5A to 5F and the above-described steps of forming the first transparent conductive layer 231a, the third insulating layer 2319 and the second transparent conductive layer 231b will be as shown in FIG.

Please refer to FIG. 2 and FIG. 3 next. The pixel array substrate 230 of the display panel 200 of the present embodiment further includes a plurality of pixel driving units 232, only one of which is schematically illustrated in FIG. Each pixel driving unit 232 includes a pixel electrode 2321 and a pair of electrodes 2322. The pixel electrode 2321 has a plurality of first strip patterns 2321a. The counter electrode 2322 has a plurality of second strip patterns 2322a. The first strip pattern 2321a and the second strip pattern 2322a are alternately arranged, and the opposite electrode 2322 and the pixel electrode 2321 are electrically insulated from each other. In other words, the display panel 200 of the present embodiment is generally referred to as an In-Plane Switching (IPS) type display panel, and those skilled in the art can also make equivalent design changes as shown in FIG. 2, drawing The element electrode 2321 and the counter electrode 2322 are located on different planes.

Please refer to Figure 6 below. Figure 6 is a cross-sectional view showing a display panel in accordance with a second embodiment of the present invention. The display panel 300 includes a pair of substrates 210, a display medium 220, and a pixel array substrate 330. Since the present embodiment is substantially similar to the first embodiment, the same reference numerals are used to denote the same or similar elements. In the pixel array substrate 330, the contact window structure 231 illustrated in FIG. 4 is also used. The main difference between the present embodiment and the foregoing first embodiment is that in the display panel 300 of the embodiment, the pixel electrode 3321 and the opposite electrode 3322 are located on the same plane, wherein the opposite electrodes 3322 and the first conductor Layer 2316, second conductor layer 2318 and first through The conductive layer 231a is electrically connected, and the pixel electrode 3321 is electrically connected to the second transparent conductive layer 231b. The display panel 300 of this embodiment is also a coplanar switching display panel.

Please refer to Figure 7 again. Figure 7 is a cross-sectional view showing a display panel in accordance with a third embodiment of the present invention. Figure 8 is a partial top plan view of the pixel array substrate of Figure 7. The display panel 400 includes a pair of substrates 210, a display medium 220, and a pixel array substrate 430. The present embodiment is substantially similar to the first embodiment, and thus the same reference numerals are used to refer to the same or similar elements, and in the pixel array substrate 430, the contact window structure 231 illustrated in FIG. 4 is also used. Please refer to FIG. 7 and FIG. 8 at the same time. Specifically, the main difference between the present embodiment and the foregoing first embodiment is that in the pixel driving unit 432 of the pixel array substrate 430 of the display panel 400 in the embodiment, Each pixel driving unit 432 includes a pixel electrode 4321 and a pair of electrodes 4322. The pixel electrode 4321 has a plurality of first strip patterns 4321a and the aforementioned first strip patterns 4321a are located on the same plane. The counter electrode 4322 is located below the pixel electrode 4321, and the pixel electrode 4321 and the counter electrode 4322 are electrically insulated from each other. In other words, the display panel 400 of the present embodiment is described by taking a Fringe Field Switching (FFS) type display panel as an example, and an equivalent design change can be made by those skilled in the art. Further, in the third embodiment, the positional arrangement, the preparation method, and the materials regarding the other elements are similar to those of the first embodiment, and thus will not be described again.

In summary, in the contact window structure of the present invention and the method of fabricating the same, the portion of the second insulating layer adjacent to the first insulating layer is etched at a rate close to that of the first insulating layer. In this way, the second insulating layer can be avoided because the etching rate is slow. The first insulating layer that has been etched underneath is suspended, thereby ensuring the integrity of the subsequently formed material layer and improving the reliability of the product. The contact window structure can be applied to a pixel array substrate, and the aforementioned pixel array substrate can be used in a display panel.

Although the present invention has been disclosed in the above embodiments, and is not intended to limit the scope of the present invention, those skilled in the art can make some modifications to the structure of the present invention without departing from the spirit and scope of the invention. The scope of protection of the present invention is defined by the scope of the appended patent application.

100A‧‧‧Contact window

100, 231‧‧‧ contact window structure

110, 2311‧‧‧ substrate

120‧‧‧buffer layer

130, 2319‧‧‧ third insulation layer

140, 2316‧‧‧ first conductor layer

150, 2315‧‧‧ first insulation layer

160, 2317‧‧‧Second insulation

170, 2318‧‧‧ second conductor layer

200, 300, 400‧‧‧ display panels

210‧‧‧ opposite substrate

220‧‧‧Display media

230, 330, 430‧‧‧ pixel array substrate

2312‧‧‧First buffer layer

2313‧‧‧Second buffer layer

2314‧‧‧4th insulation

2315a‧‧‧First contact window

2317a‧‧‧Second contact window

231a‧‧‧First transparent conductive layer

231b‧‧‧Second transparent conductive layer

232, 432‧‧‧ pixel drive unit

2321, 3321, 4321‧‧‧ pixel electrodes

2321a, 4321a‧‧‧ first strip pattern

2322, 3322, 4322‧‧‧ opposite electrode

2322a‧‧‧Second strip pattern

1 is a schematic view of a conventional contact window structure.

2 is a cross-sectional view showing a display panel in accordance with a first embodiment of the present invention.

3 is a partial top view of the pixel array substrate of FIG. 2.

Figure 4 is a cross-sectional view of the pixel array substrate of Figure 3 taken along line AA'.

5A to 5F are schematic cross-sectional views showing a method of manufacturing the contact window structure of Fig. 4.

Figure 6 is a cross-sectional view showing a display panel in accordance with a second embodiment of the present invention.

Figure 7 is a cross-sectional view showing a display panel in accordance with a third embodiment of the present invention.

Figure 8 is a partial top plan view of the pixel array substrate of Figure 7.

231‧‧‧Contact window structure

2311‧‧‧Substrate

2312‧‧‧First buffer layer

2313‧‧‧Second buffer layer

2314‧‧‧4th insulation

2315‧‧‧First insulation

2315a‧‧‧First contact window

2316‧‧‧First conductor layer

2317‧‧‧Second insulation

2317a‧‧‧Second contact window

2318‧‧‧Second conductor layer

2319‧‧‧ Third insulation layer

231a‧‧‧First transparent conductive layer

231b‧‧‧Second transparent conductive layer

Claims (27)

A contact window structure includes: a first conductor layer disposed on a substrate; a first insulating layer covering the first conductor layer and the substrate, and having a first contact window, wherein the first conductor layer a portion of the first contact window; a second insulating layer covering the first insulating layer and having a second contact window, wherein the first contact window is exposed to the second contact window, the first insulating layer The material of the layer is different from the material of the second insulating layer. For the same etching liquid, the etching rate of the first insulating layer is greater than the etching rate of the second insulating layer, and the second insulating layer is close to the first insulating layer. a portion of the etch rate is greater than an etch rate of the portion of the second insulating layer away from the first insulating layer; and a second conductor layer covering the first contact window and the second contact window and contacting the first conductor layer a portion of the first insulating layer, wherein the first insulating layer is made of tantalum oxide, the second insulating layer is made of tantalum nitride, and the second insulating layer is adjacent to a portion of the first insulating layer. The turns ratio is greater than the second insulating layer Nitrogen from the silicon portion than the first insulating layer, and the etchant is hydrofluoric acid. The contact window structure of claim 1, wherein the first insulating layer is in contact with the first conductive layer, and the second insulating layer is in contact with the first insulating layer. The contact window structure of claim 1, wherein the second insulating layer is from a portion close to the first insulating layer for the same etching liquid The etch rate to the portion away from the first insulating layer is a gradual change. The contact window structure of claim 1, wherein for the same etching liquid, an etching rate of the second insulating layer from a portion close to the first insulating layer to a portion away from the first insulating layer is two stages Variety. The contact window structure of claim 1, further comprising: a first transparent conductive layer covering and contacting the second conductor layer; a second transparent conductive layer; and a third insulating layer disposed on the Between the first transparent conductive layer and the second transparent conductive layer to form a capacitor. A pixel array substrate includes a contact window structure, wherein the contact window structure comprises: a first conductor layer disposed on a substrate; a first insulating layer covering the first conductor layer and the substrate, and having a a first contact window, wherein a portion of the first conductor layer is exposed to the first contact window; a second insulating layer covering the first insulating layer and having a second contact window, wherein the first contact window Exposed to the second contact window, the material of the first insulating layer is different from the material of the second insulating layer, and the etching rate of the first insulating layer is greater than the etching rate of the second insulating layer for the same etching solution, An etch rate of a portion of the second insulating layer adjacent to the first insulating layer is greater than an etch rate of a portion of the second insulating layer away from the first insulating layer; and a second conductive layer covering the first contact window The second contact window contacts the portion of the first conductor layer exposed to the first contact window, The material of the first insulating layer is yttrium oxide, the material of the second insulating layer is tantalum nitride, and the ratio of nitrogen to yt of the portion of the second insulating layer adjacent to the first insulating layer is greater than that of the second insulating layer. a nitrogen to bismuth ratio of a portion of an insulating layer, and the etching solution is hydrofluoric acid. The pixel array substrate of claim 6, wherein for the same etching liquid, an etching rate of the second insulating layer from a portion close to the first insulating layer to a portion away from the first insulating layer is progressive Variety. The pixel array substrate of claim 6, wherein for the same etching liquid, an etching rate of the second insulating layer from a portion close to the first insulating layer to a portion away from the first insulating layer is two Stage changes. The pixel array substrate of claim 6, wherein the contact window structure further comprises: a first transparent conductive layer covering and contacting the second conductor layer; a second transparent conductive layer; and a third An insulating layer is disposed between the first transparent conductive layer and the second transparent conductive layer to form a capacitor. The pixel array substrate of claim 6, further comprising a plurality of pixel driving units, each pixel driving unit comprising a pixel electrode and a pair of electrodes, the pixel electrodes having a plurality of pixels a plurality of patterns, the opposite electrodes are electrically insulated from the pixel electrodes, the opposite electrodes have a plurality of second strip patterns, and the first strip patterns and the second strips The patterns are alternately arranged. The pixel array substrate according to claim 10, wherein The pixel electrodes are located on the same plane as the counter electrodes. The pixel array substrate of claim 10, wherein the pixel electrodes and the counter electrodes are located on different planes. The pixel array substrate of claim 6, further comprising a plurality of pixel driving units, each pixel driving unit comprising a pixel electrode and a pair of electrodes, the pixel electrodes having a plurality of pixels The strip-shaped patterns are located on the same plane, and the counter electrodes are located under the pixel electrodes, and the pixel electrodes are electrically insulated from the counter electrodes. A display panel includes: a pair of substrates; a display medium; a pixel array substrate, comprising a contact window structure, wherein the display medium is disposed between the opposite substrate and the pixel array substrate, the contact window structure The first conductor layer is disposed on a substrate; a first insulating layer covers the first conductor layer and the substrate, and has a first contact window, wherein a portion of the first conductor layer is exposed a first contact layer; a second insulating layer covering the first insulating layer and having a second contact window, wherein the first contact window is exposed to the second contact window, the first insulating layer is different in material The material of the second insulating layer, the etching rate of the first insulating layer is greater than the etching rate of the second insulating layer, and the etching rate of the portion of the second insulating layer close to the first insulating layer Greater than the second insulating layer away from the first An etch rate of a portion of an insulating layer; and a second conductor layer covering the first contact window and the second contact window and contacting a portion of the first conductor layer exposed to the first contact window, wherein the first An insulating layer is made of yttrium oxide, the second insulating layer is made of tantalum nitride, and a portion of the second insulating layer adjacent to the first insulating layer has a nitrogen to lanthanum ratio greater than the second insulating layer is away from the first insulating layer. The nitrogen to bismuth ratio of the portion, and the etching solution is hydrofluoric acid. The display panel of claim 14, wherein the etch rate of the second insulating layer from a portion close to the first insulating layer to a portion away from the first insulating layer is a gradual change for the same etchant. The display panel of claim 14, wherein an etching rate of the second insulating layer from a portion close to the first insulating layer to a portion away from the first insulating layer is a two-stage change for the same etching liquid . The display panel of claim 14, wherein the contact window structure further comprises: a first transparent conductive layer covering and contacting the second conductor layer; a second transparent conductive layer; and a third insulating layer And disposed between the first transparent conductive layer and the second transparent conductive layer to form a capacitor. The display panel of claim 14, wherein the pixel array substrate further comprises a plurality of pixel driving units, each pixel driving unit comprising a pixel electrode and a pair of pixel electrodes, the pixel electrodes Having a plurality of first strip patterns, the counter electrodes are electrically insulated from the pixel electrodes, and the counter electrodes have a plurality of second strip patterns, and the first strips The pattern is alternately arranged with the second strip patterns. The display panel of claim 18, wherein the pixel electrodes are on the same plane as the counter electrodes. The display panel of claim 18, wherein the pixel electrodes and the counter electrodes are located on different planes. The display panel of claim 14, wherein the pixel array substrate further comprises a plurality of pixel driving units, each pixel driving unit comprising a pixel electrode and a pair of pixel electrodes, the pixel electrodes Having a plurality of first strip patterns on the same plane, the counter electrodes are located under the pixel electrodes, and the pixel electrodes are electrically insulated from the counter electrodes, wherein the counter electrodes Electrically connected to the first conductor layer. A method for manufacturing a contact window structure includes: forming a first conductor layer on a substrate; forming a first insulating layer to cover the first conductor layer and the substrate; forming a second insulating layer to cover the first insulation a layer, wherein a material of the first insulating layer is different from a material of the second insulating layer, and an etching rate of the first insulating layer is greater than an etching rate of the second insulating layer for the same etching liquid, the second insulating layer An etch rate of a portion adjacent to the first insulating layer is greater than an etch rate of a portion of the second insulating layer away from the first insulating layer; etching the first insulating layer and the second insulating layer to the first insulating layer Forming a first contact window and forming a second contact window on the second insulating layer, wherein a portion of the first conductor layer is exposed to the first contact window, the first contact window being exposed to the second Contact window; Forming a second conductor layer to cover the first contact window and the second contact window, and contacting a portion of the first conductor layer exposed to the first contact window, wherein the first insulating layer is made of yttrium oxide. The material of the second insulating layer is tantalum nitride, and the ratio of nitrogen to yt of the portion of the second insulating layer adjacent to the first insulating layer is greater than the ratio of nitrogen to germanium of the portion of the second insulating layer away from the first insulating layer, and The etching solution is hydrofluoric acid. The method for manufacturing a contact window structure according to claim 22, wherein the method for forming the second insulating layer comprises performing a chemical vapor deposition process using decane and ammonia, and performing a chemical vapor deposition process. Reduce the ratio of ammonia to decane. The method for manufacturing a contact window structure according to claim 23, wherein in the process of performing the chemical vapor deposition process, the ratio of ammonia to decane in the front stage is seven to one, and the ammonia in the latter stage is on decane. The ratio is three to one. The method for manufacturing a contact window structure according to claim 23, wherein in the process of performing the chemical vapor deposition process, the manner of lowering the ratio of ammonia to decane is gradually lowered. The method of manufacturing a contact window structure according to claim 22, wherein the etching the first insulating layer and the second insulating layer comprises performing dry etching followed by wet etching. The method of manufacturing the contact window structure of claim 22, further comprising: forming a first transparent conductive layer to cover and contact the second conductive layer after forming the second conductive layer; forming a third An insulating layer covering the first transparent conductive layer; and forming a second transparent conductive layer on the third insulating layer to form a capacitance.