CN103117249A - Method for manufacturing passivation layer on pixel electrode, liquid crystal display and manufacturing method thereof - Google Patents
Method for manufacturing passivation layer on pixel electrode, liquid crystal display and manufacturing method thereof Download PDFInfo
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- CN103117249A CN103117249A CN2013100351287A CN201310035128A CN103117249A CN 103117249 A CN103117249 A CN 103117249A CN 2013100351287 A CN2013100351287 A CN 2013100351287A CN 201310035128 A CN201310035128 A CN 201310035128A CN 103117249 A CN103117249 A CN 103117249A
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Abstract
An embodiment of the invention discloses a method for manufacturing passivation layer on a pixel electrode, a liquid crystal display and a manufacturing method thereof. The method for manufacturing a passivation layer on the pixel electrode includes: forming a passivation layer in a first thickness on the surface of a pixel electrode via process gas in a first flow volume under first power; forming a passivation layer in a second thickness on the surface of passivation layer in the first thickness via process gas in a second flow volume under second power, wherein the first power is smaller than the second power, the first flow volume is smaller than the second flow volume, the first thickness is smaller than the second thickness, the passivation layer in the first thickness and the passivation layer in the second thickness are compact, so that when through holes are drilled in the passivation layers, undercut is avoided, good electric connection between a top electrode and a pixel electrode is guaranteed, the problem that a TFT (thin film transistor) product displays abnormally or cannot display due to contact breakage between the top layer ITO (indium tin oxide) film and the pixel ITO film is solved, product rate of the TFT products is improved.
Description
Technical field
The present invention relates to liquid crystal display manufacturing technology field, relate in particular to the manufacture method, liquid crystal display of passivation layer on a kind of pixel electrode and preparation method thereof.
Background technology
As shown in Figure 1-Figure 3, in the manufacturing process of TFT product, after pixel ito thin film 01 completes, need to first utilize chemical vapor depsotition equipment, on described pixel ito thin film 01 surface, form passivation layer 02; Recycling is dry-etched in the interior formation via hole 03 of described passivation layer 02; Finally on described passivation layer 02 surface, form top layer ITO04; Wherein, described top layer ITO04 is electrically connected to described pixel ito thin film 01.
But; in the manufacture craft of tradition TFT product; in the process that forms via hole 03; can form undercutting at interior via hole 03 place of described passivation layer 02; claim again contrary angle or chamfering; cause between top layer ITO04 and pixel ito thin film 01 and contact across disconnected, cause this TFT product to show and extremely maybe can't show, reduce the yield of TFT product.
Summary of the invention
For solving the problems of the technologies described above; the embodiment of the present invention provides the manufacture method of passivation layer on a kind of liquid crystal display and pixel electrode thereof; to solve due between top layer ITO and pixel ito thin film, contact across breaking; cause this TFT product to show the problem that extremely maybe can't show, improve the yield of TFT product.
For addressing the above problem, the embodiment of the present invention provides following technical scheme:
The manufacture method of passivation layer on a kind of pixel electrode comprises: under the first power, utilize the process gas of first flow, form the passivation layer of the first thickness in pixel electrode surface; Under the second power, utilize the process gas of the second flow, form the passivation layer of the second thickness in the passivation layer surface of described the first thickness; Wherein, described the first power is less than the second power; Described first flow is less than the second flow; Described the first thickness is less than the second thickness.
Preferably, the first power is 50% of the second power.
Preferably, the 20%-40% that first flow is the second flow, comprise endpoint value.
Preferably, the 10%-15% that described the first thickness is the second thickness, comprise endpoint value.
Preferably, the scope of described the first thickness is
comprise endpoint value.
Preferably, described passivation layer is silicon nitride layer.
Preferably, the process gas in described passivation layer manufacturing process comprises SiH
4and NH
3.
A kind of manufacture method of liquid crystal display comprises: adopt above-mentioned any one manufacture method, in pixel electrode surface, form successively the passivation layer of the first thickness and the passivation layer of the second thickness; Form via hole in described passivation layer, described via hole runs through the passivation layer of described the first thickness and the passivation layer of the second thickness fully; Form the top layer electrode in the passivation layer surface with via hole.
The liquid crystal display that a kind of above-mentioned manufacture method is made.
Compared with prior art, technique scheme has the following advantages:
The technical scheme that the embodiment of the present invention provides, employing first, under the first power, utilizes the process gas of first flow, forms the passivation layer of the first thickness in pixel electrode surface; Under the second power, utilize the process gas of the second flow again, form the method for the passivation layer of the second thickness in the passivation layer surface of described the first thickness, complete the making of pixel electrode surface passivation layer, wherein, described the first power is less than the second power; Described first flow is less than the second flow; Described the first thickness is less than the second thickness.
Because power and gas flow in the passivation layer manufacturing process of the first thickness are less, the concentration of its H+ free radical is lower, to the ability of capturing of oxygen in pixel electrode a little less than, thereby make the loss of H+ in the manufacturing process of passivation layer of described the first thickness reduce, the passivation layer of making is comparatively fine and close, and the passivation layer of the first thickness has been blocked contacting of H+ free radical and pixel electrode in the passivation layer manufacturing process of follow-up the second thickness
+make H+ in the passivation layer manufacturing process of the second thickness can not lose; the passivation layer of the second thickness formed is also comparatively fine and close; and then make in the process that forms via hole in described passivation layer; not there will be undercutting; guaranteed in the top layer electrode of described passivation layer surface and the excellent electric contact between pixel electrode; solved owing to contacting between top layer ITO and pixel ito thin film across disconnected, caused this TFT product to show the problem that extremely maybe can't show, improved the yield of TFT product.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1-3 are in prior art in TFT production technique, the cross-sectional view of the manufacture method of passivation layer on pixel electrode;
The cross-sectional view of the manufacture method of the liquid crystal display that Fig. 4-6 provide for the embodiment of the present invention.
Embodiment
Just as described in the background section; as shown in Figure 3; in the manufacture craft of tradition TFT product; in the process that forms via hole 03; can form undercutting in via hole 03 place in described passivation layer 02; cause between top layer ITO04 and pixel ito thin film 01 and contact across disconnected, cause the TFT product to show and extremely maybe can't show, reduce the yield of TFT product.
The inventor studies discovery, and this is mainly due in the process forming passivation layer 02, needs process gas SiH
4, NH
3under the effect of high-frequency RF power supply, ionize, thereby produce the very high H+ free radical of concentration, and the H+ free radical of high concentration can be captured the oxygen in pixel ito thin film 01, thereby make H+ reduce, cause just starting the silicon nitride passivation 02 that forms very loose, and then cause being dry-etched in the process of the interior formation via hole 03 of described passivation layer 02 in utilization, the etch rate of passivation layer 02 bottom is accelerated, be greater than the etch rate at described passivation layer 02 middle part, form undercutting, make after described passivation layer 02 surface forms top layer ITO04, between top layer ITO04 and pixel ito thin film 01, contact across disconnected, causing the TFT product to show extremely maybe can't show, reduce the yield of TFT product.
On basis based on above-mentioned research, the embodiment of the present invention provides the manufacture method of passivation layer on a kind of pixel electrode, and the method comprises the following steps:
Under the first power, utilize the process gas of first flow, form the passivation layer of the first thickness in pixel electrode surface;
Under the second power, utilize the process gas of the second flow, form the passivation layer of the second thickness in the passivation layer surface of described the first thickness;
Wherein, described the first power is less than the second power; Described first flow is less than the second flow; Described the first thickness is less than the second thickness.
The present invention also provides a kind of liquid crystal display and preparation method thereof, and wherein, the manufacture method of described liquid crystal display comprises:
Adopt above-mentioned manufacture method, in pixel electrode surface, form successively the passivation layer of the first thickness and the passivation layer of the second thickness;
Form via hole in described passivation layer, described via hole runs through the passivation layer of described the first thickness and the passivation layer of the second thickness fully;
Form the top layer electrode in the passivation layer surface with via hole.
The technical scheme that the embodiment of the present invention provides, adopt two-step method, first under the first lower power, utilize the process gas of lower first flow, form the passivation layer of the first thinner thickness in described pixel electrode surface, and then use the process gas of the second higher power and higher the second flow, it is conventional process of the prior art, form the method for the passivation layer of the second thickness in the passivation layer surface of described the first thickness, complete the making of described pixel electrode surface passivation layer.
Because power and gas flow in the passivation layer manufacturing process of the first thickness are less, the concentration of its H+ free radical is lower, to the ability of capturing of oxygen in pixel electrode a little less than, thereby make the loss of manufacturing process H+ of the passivation layer of described the first thickness reduce, the passivation layer of making is comparatively fine and close, and the passivation layer of the first thickness has been blocked contacting of H+ free radical and pixel electrode in the passivation layer manufacturing process of follow-up the second thickness, make H+ in the passivation layer manufacturing process of the second thickness can not lose, the passivation layer of the second thickness formed is also comparatively fine and close, and then make in the process that forms via hole in described passivation layer, not there will be undercutting, guaranteed in the top layer electrode of described passivation layer surface and the excellent electric contact between pixel electrode, solved owing to contacting between top layer ITO and pixel ito thin film across disconnected, cause this TFT product to show the problem that extremely maybe can't show, improved the yield of TFT product.
It is more than the application's core concept, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, those of ordinary skills, not making under the creative work prerequisite the every other embodiment obtained, belong to the scope of protection of the invention.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can be in the situation that do similar popularization without prejudice to intension of the present invention, so the present invention is not subject to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the present invention is described in detail in detail; for ease of explanation; the profile that means device architecture can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three-dimensional space that in actual fabrication, should comprise in addition, length, width and the degree of depth.
On the pixel electrode embodiment of the present invention provided below in conjunction with Fig. 4-Fig. 6, the manufacture method of passivation layer, liquid crystal display and preparation method thereof are described in detail.
Embodiment mono-:
As shown in Figure 4, the manufacture method of passivation layer on the pixel electrode that the embodiment of the present invention provides comprises: under the first power, utilize the process gas of first flow, form the passivation layer 12 of the first thickness on pixel electrode 11 surfaces; Under the second power, utilize the process gas of the second flow, form the passivation layer 13 of the second thickness on passivation layer 12 surfaces of described the first thickness; Wherein, described the first power is less than the second power; Described first flow is less than the second flow; Described the first thickness is less than the second thickness.
In one embodiment of the invention, described passivation layer is silicon nitride layer, and the process gas in its manufacturing process comprises SiH
4and NH
3.The following embodiment of the present invention be take described passivation layer as silicon nitride layer is example, and the manufacture method that the embodiment of the present invention is provided is introduced, but manufacture method provided by the present invention is not limited in this.
Preferably, in one embodiment of the invention, compared to the manufacture method of passivation layer on pixel electrode in traditional TFT Product Process, in the manufacture method that the embodiment of the present invention provides, described the first power is about 50% of the second power, comprises 50%; The 20%-40% that described first flow is the second flow, comprise endpoint value; The 10%-15% that described the first thickness is the second thickness, comprise endpoint value.Preferred, in a specific embodiment of the present invention, the scope of described the first thickness is
comprise endpoint value.It should be noted that, in the manufacture method that the embodiment of the present invention provides, the concrete technology parameter in passivation layer 13 manufacturing process of the passivation layer 12 of the first thickness and the second thickness, depending on concrete depositing device, the present invention does not do restriction to this.
Owing to utilizing low-power, the process gas of low discharge is made in the process of passivation layer, in H+ radical pair pixel electrode the ability of capturing of oxygen a little less than, therefore, the manufacture method that the embodiment of the present invention provides adopts two-step method, first use the process gas of the first lower power and low first flow, form the passivation layer 12 of the first thinner thickness on described pixel electrode 11 surfaces, and then use the process gas of the second higher power and higher the second flow, utilize conventional process of the prior art, passivation layer 12 surfaces at described the first thickness form residual thickness, the i.e. method of the passivation layer 13 of the second thickness, complete the making of described pixel electrode surface 11 passivation layers, thereby make in the manufacturing process of passivation layer 12 of described the first thickness, the loss of H+ reduces, the passivation layer of making is comparatively fine and close, and the passivation layer 12 of the first thickness after completing has been blocked in passivation layer 13 manufacturing process of follow-up the second thickness, the H+ free radical contacts with pixel electrode 11, make H+ in passivation layer 13 manufacturing process of the second thickness can not lose, the passivation layer 13 of the second thickness formed is also comparatively fine and close, solve the H+ free radical due to high concentration in the prior art and captured the oxygen in the pixel ito thin film, cause just starting the bottom passivation layer that forms very loose, with the inconsistent problem of top, passivation layer compactness.
And, in the manufacture method that the embodiment of the present invention provides, the integral thickness of described passivation layer, i.e. the first thickness and the second thickness sum, identical with the thickness of the passivation layer of making in prior art, and the passivation layer 13 of the passivation layer 12 of the first thickness and the second thickness can realize continuous making, thus can not have influence on the Production Time of described passivation layer, and then, both on not impact of successive process, can not increase production cost again.
The embodiment of the present invention also provides a kind of manufacture method of liquid crystal display, comprising:
As shown in Figure 4, adopt above-mentioned manufacture method, form successively the passivation layer 12 of the first thickness and the passivation layer 13 of the second thickness on pixel electrode 11 surfaces;
As shown in Figure 5, form via hole 14 in described passivation layer, described via hole 14 runs through the passivation layer 12 of described the first thickness and the passivation layer 13 of the second thickness fully;
As shown in Figure 6, form top layer electrode 15 in the passivation layer surface with via hole 14.
In addition, the embodiment of the present invention also provides a kind of liquid crystal display of utilizing the manufacture method making of above-mentioned liquid crystal display.
In the manufacture method of the liquid crystal display provided due to the embodiment of the present invention, the passivation layer 12 of described the first thickness and the passivation layer 13 of the second thickness are all comparatively fine and close, solve the H+ free radical due to high concentration in the prior art and captured the oxygen in the pixel ito thin film, cause just starting the very loose problem of passivation layer formed, thereby make in the process that forms via hole 13 in described passivation layer, not there will be undercutting, guaranteed in the top layer electrode 15 of described passivation layer surface and the excellent electric contact between pixel electrode 11, solved owing to contacting between top layer ITO and pixel ito thin film across disconnected, cause this TFT product to show the problem that extremely maybe can't show, improved the yield of TFT product.
And, because the embodiment of the present invention provides in manufacture method, in the manufacturing process of the passivation layer 12 of described the first thickness, power is less, and the flow of process gas is less, make the corrosion function of H+ radical pair pixel electrode 11 less, thereby improved the contact interface between described top layer electrode 15 and pixel electrode 11, and then improved the contact resistance between described top layer electrode 15 and pixel electrode 11.
In this specification, various piece adopts the mode of going forward one by one to describe, and what each part stressed is and the difference of other parts that between various piece, identical similar part is mutually referring to getting final product.
To the above-mentioned explanation of the disclosed embodiments, make professional and technical personnel in the field can realize or use the present invention.Multiple modification to these embodiment will be apparent for those skilled in the art, and General Principle as defined herein can be in the situation that do not break away from the spirit or scope of the present invention, realization in other embodiments.Therefore, the present invention will can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (9)
1. the manufacture method of passivation layer on a pixel electrode, is characterized in that, comprising:
Under the first power, utilize the process gas of first flow, form the passivation layer of the first thickness in pixel electrode surface;
Under the second power, utilize the process gas of the second flow, form the passivation layer of the second thickness in the passivation layer surface of described the first thickness;
Wherein, described the first power is less than the second power; Described first flow is less than the second flow; Described the first thickness is less than the second thickness.
2. manufacture method according to claim 1, is characterized in that, the first power is 50% of the second power.
3. manufacture method according to claim 2, is characterized in that, the 20%-40% that first flow is the second flow, comprise endpoint value.
4. manufacture method according to claim 3, is characterized in that, the 10%-15% that described the first thickness is the second thickness, comprise endpoint value.
5. manufacture method according to claim 4, is characterized in that, the scope of described the first thickness is
comprise endpoint value.
6. manufacture method according to claim 5, is characterized in that, described passivation layer is silicon nitride layer.
7. manufacture method according to claim 5, is characterized in that, the process gas in described passivation layer manufacturing process comprises SiH
4and NH
3.
8. the manufacture method of a liquid crystal display, is characterized in that, comprising:
Adopt the described manufacture method of claim 1-7 any one, in pixel electrode surface, form successively the passivation layer of the first thickness and the passivation layer of the second thickness;
Form via hole in described passivation layer, described via hole runs through the passivation layer of described the first thickness and the passivation layer of the second thickness fully;
Form the top layer electrode in the passivation layer surface with via hole.
9. a liquid crystal display that adopts the described manufacture method of claim 8 to make.
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Cited By (3)
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| CN104538407A (en) * | 2015-01-14 | 2015-04-22 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
| CN107731704A (en) * | 2017-10-10 | 2018-02-23 | 信利（惠州）智能显示有限公司 | Via is against angle detection method and device |
| CN113156734A (en) * | 2021-03-11 | 2021-07-23 | 昆山龙腾光电股份有限公司 | Auxiliary scattering panel, manufacturing method thereof and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104538407A (en) * | 2015-01-14 | 2015-04-22 | 京东方科技集团股份有限公司 | Display panel, manufacturing method thereof and display device |
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| CN113156734A (en) * | 2021-03-11 | 2021-07-23 | 昆山龙腾光电股份有限公司 | Auxiliary scattering panel, manufacturing method thereof and display device |
| CN113156734B (en) * | 2021-03-11 | 2022-07-01 | 昆山龙腾光电股份有限公司 | Auxiliary scattering panel, manufacturing method thereof and display device |
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Application publication date: 20130522 |