CN102739173A - Transconductance amplifier, resistor, inductor and filter - Google Patents

Abstract

The application discloses transconductance amplifier, resistance, inductance and wave filter, the transconductance amplifier of this application adopts three source degeneration difference amplifiers to constitute, wherein a set of amplifier comprises seventh PMOS pipe, eighth PMOS pipe, fifth PMOS pipe and sixth PMOS pipe, the second amplifier comprises ninth PMOS pipe, tenth PMOS pipe, eleventh PMOS pipe and twelfth PMOS pipe, the third amplifier comprises seventeenth PMOS pipe, eighteenth PMOS pipe, nineteenth PMOS pipe and twentieth PMOS pipe, the output cross connection of three amplifier groups, thereby can utilize the mode of current subtraction to eliminate the third harmonic, thereby realize the low-power consumption high linearity of transconductance amplifier. Furthermore, the resistor and the inductor which are obtained by the transconductance amplifier in an analog mode, and a circuit which is composed of the resistor and/or the inductor can also achieve low power consumption and high linearity.

Description

A kind of trsanscondutance amplifier, resistance, inductance and filter

Technical field

The application relates to circuit field, relates in particular to a kind of trsanscondutance amplifier, resistance, inductance and filter.

Background technology

Along with the communication technology; Especially the develop rapidly of mobile communication technology and computing technique; As a key modules in the modern receiver especially zero intermediate frequency receiver, mutual conductance-electric capacity (Gm-C) filter can carry out the Filtering Processing of signal after frequency mixer, for back grade variable gain amplifier provides scattering frequency spectrum less signal; Can be effectively at variable gain amplifier (VGA; Variable Gain Amplifier), analog/digital converter (ADC, Analog-to-Digital Converter) preliminary treatment signal before, can prevent the variable gain amplifier of back level again because out of band signal is excessive and saturated.

In the mobile digital video broadcast system, be positioned at the Gm-C filter of receiver intermediate-frequency section, need to handle bigger input signal, require filter under the very low situation of power consumption, to guarantee higher linearity.

Summary of the invention

In view of this, the technical problem that the application will solve is, a kind of trsanscondutance amplifier, resistance, inductance and filter are provided, and can make filter under the very low situation of power consumption, guarantee higher linearity.

For this reason, the application embodiment adopts following technical scheme:

A kind of trsanscondutance amplifier comprises:

The grid of the one NMOS pipe connects the VT input of trsanscondutance amplifier; The source ground of the one NMOS pipe, drain electrode connects the drain electrode of the 2nd PMOS pipe;

The grid that the 2nd PMOS manages, the 3rd PMOS manages, the 4th PMOS manages, the 13 PMOS manages, the 14 PMOS manages, the 15 PMOS manages, the 16 PMOS manages, the connection of source electrode difference correspondence; And the grid of the 2nd PMOS pipe is connected with the drain electrode of the 2nd PMOS pipe; The source electrode of the 2nd PMOS pipe connects the supply voltage input of trsanscondutance amplifier;

The drain electrode of the 3rd PMOS pipe connects the drain electrode of the 5th PMOS pipe, the source electrode of the 6th PMOS pipe and the source electrode of the 7th PMOS pipe respectively;

The drain electrode of the 4th PMOS pipe connects the source electrode of the 5th PMOS pipe, the drain electrode of the 6th PMOS pipe and the source electrode of the 8th PMOS pipe respectively;

The drain electrode of the 13 PMOS pipe connects the source electrode of the 9th PMOS pipe, the source electrode of the 11 PMOS pipe and the drain electrode of the 12 PMOS pipe respectively;

The drain electrode of the 14 PMOS pipe connects the source electrode of the tenth PMOS pipe, the drain electrode of the 11 PMOS pipe and the source electrode of the 12 PMOS pipe respectively;

The drain electrode of the 15 PMOS pipe connects the drain electrode of the 17 PMOS pipe, the source electrode of the 18 PMOS pipe and the source electrode of the 19 PMOS pipe respectively;

The drain electrode of the 16 PMOS pipe connects the source electrode of the 17 PMOS pipe, the drain electrode of the 18 PMOS pipe and the source electrode of the 20 PMOS pipe respectively;

The grid of the grid of the grid of the grid of the 6th PMOS pipe, the 8th PMOS pipe, the 9th PMOS pipe and the 11 PMOS pipe all is connected with the normal phase input end of trsanscondutance amplifier;

The grid of the grid of the grid of the grid of the tenth PMOS pipe, the 12 PMOS pipe, the 18 PMOS pipe and the 19 PMOS pipe all is connected with the negative-phase input of trsanscondutance amplifier;

The equal ground connection of grid of the grid of the grid of the grid of the 5th PMOS pipe, the 7th PMOS pipe, the 17 PMOS pipe and the 20 PMOS pipe;

The grid of the 21 NMOS pipe is connected with the grid of the 22 NMOS pipe, and connects the common-mode feedback voltage end of trsanscondutance amplifier; The source ground of the source electrode of the 21 NMOS pipe and the 22 NMOS pipe;

The drain electrode of the drain electrode of the drain electrode of the drain electrode of the 7th PMOS pipe, the 9th PMOS pipe, the 19 PMOS pipe and the 21 NMOS pipe all is connected with the negative output of trsanscondutance amplifier;

The drain electrode of the drain electrode of the drain electrode of the drain electrode of the 8th PMOS pipe, the tenth PMOS pipe, the 20 PMOS pipe and the 22 NMOS pipe all is connected with the positive output end of trsanscondutance amplifier.

Also comprise: the source electrode of the source electrode of the 23 PMOS pipe and the 24 PMOS pipe connects the supply voltage input of trsanscondutance amplifier; The grid of the 23 PMOS pipe is connected the bias voltage end with the grid of the 24 PMOS pipe;

The drain electrode of the 23 PMOS pipe connects the source electrode of the 25 PMOS pipe and the source electrode of the 26 PMOS pipe respectively; The drain electrode of the 24 PMOS pipe connects the source electrode of the 27 PMOS pipe and the source electrode of the 28 PMOS pipe respectively;

The grid of the 25 PMOS pipe connects the positive output end of trsanscondutance amplifier, and drain electrode connects the drain electrode of the 30 NMOS pipe and the drain electrode of the 28 PMOS pipe;

The grid of the 26 PMOS pipe is connected reference voltage end with the grid of the 27 PMOS pipe, and drain electrode connects the drain electrode of the 27 PMOS pipe and the drain electrode of the 29 NMOS pipe respectively;

The grid of the 28 PMOS pipe connects the negative output of trsanscondutance amplifier;

The grid of the 29 NMOS pipe is connected the common-mode feedback voltage end with drain electrode; The source ground of the 29 NMOS pipe;

The grid of the 30 NMOS pipe is connected source ground with drain electrode.

A kind of resistance comprises the described trsanscondutance amplifier of claim 1, wherein,

The negative output of trsanscondutance amplifier is connected with the common-mode feedback voltage end of trsanscondutance amplifier;

The positive output end of trsanscondutance amplifier is connected with the negative-phase input of trsanscondutance amplifier, and the tie point of this connection is as first end of resistance;

The negative-phase input of trsanscondutance amplifier is as second end of resistance.

A kind of resistance comprises the described trsanscondutance amplifier of claim 2, wherein,

The normal phase input end of trsanscondutance amplifier is connected with the negative output of trsanscondutance amplifier, and the tie point of this connection is as first end of said resistance;

The negative-phase input of trsanscondutance amplifier is connected with the positive output end of trsanscondutance amplifier, and the tie point of this connection is as second end of said resistance.

A kind of resistance comprises two described trsanscondutance amplifiers of claim 1, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

The positive output end of first trsanscondutance amplifier is as first end of resistance, and the normal phase input end of first trsanscondutance amplifier is as second end of resistance;

The positive output end of the normal phase input end of the positive output end of first trsanscondutance amplifier, second trsanscondutance amplifier and second trsanscondutance amplifier interconnects; The negative-phase input of the normal phase input end of the positive output end of the negative-phase input of second trsanscondutance amplifier, second trsanscondutance amplifier, first trsanscondutance amplifier, first trsanscondutance amplifier interconnects.

A kind of inductance comprises two described trsanscondutance amplifiers of claim 1, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

First end of inductance passes through first capacity earth, and is connected with the positive output end of first trsanscondutance amplifier, the normal phase input end of second trsanscondutance amplifier respectively; Second end of inductance is connected with the normal phase input end of first trsanscondutance amplifier, the positive output end of second trsanscondutance amplifier respectively;

The negative-phase input ground connection of first trsanscondutance amplifier, the negative-phase input ground connection of second trsanscondutance amplifier.

A kind of filter comprises each described trsanscondutance amplifier of claim 1 to 2, and/or, each described resistance of claim 3 to 5, and/or, the described inductance of claim 6.

Also comprise the phase-locked loop tuner, wherein,

The output of voltage controlled oscillator connects the first input end of phase frequency detector, and second input of phase frequency detector receives reference frequency signal; The output of phase frequency detector is through the input of charge pump linkloop filter, and the output of loop filter connects the input of voltage controlled oscillator and the VT input in the filter respectively.

Technique effect analysis for technique scheme is following:

The application's trsanscondutance amplifier adopts three groups of source degeneracy differential amplifiers to constitute; Wherein one group of amplifier by the 7th PMOS manage, the 8th PMOS pipe, the 5th PMOS pipe and the 6th PMOS pipe form; Second group of amplifier by the 9th PMOS manage, the tenth PMOS pipe, the 11 PMOS pipe and the 12 PMOS pipe form; The 3rd group of amplifier is made up of the 17 PMOS pipe, the 18 PMOS pipe, the 19 PMOS pipe and the 20 PMOS pipe; The output interconnection of three groups of amplifiers; Thereby the mode that can utilize current subtraction is eliminated the cubic term harmonic wave, thereby realizes the low-power consumption high linearity of trsanscondutance amplifier, and then can make the filter of the said trsanscondutance amplifier of use under the very low situation of power consumption, guarantee higher linearity.

Description of drawings

Fig. 1 is the application's trsanscondutance amplifier first embodiment sketch map;

Fig. 2 is the application's common mode feedback circuit structural representation;

Fig. 3 is the application's resistance first embodiment sketch map;

Fig. 4 is the application's resistance second embodiment sketch map;

Fig. 5 is the first embodiment sketch map of the application's inductance;

Fig. 6 is the application's resistance the 3rd embodiment sketch map;

Fig. 7 is a kind of 7 rank elliptic filter structural representations of the application;

Fig. 8 is the application's filter first embodiment sketch map;

Fig. 9 is the application's filter second embodiment sketch map;

Figure 10 is the simplification circuit structure diagram of the said trsanscondutance amplifier of the application.

Embodiment

Below, be described with reference to the accompanying drawings the realization of the application's trsanscondutance amplifier, resistance, inductance and filter.

Fig. 1 is the application's trsanscondutance amplifier structural representation, and is of Fig. 1, and this trsanscondutance amplifier comprises:

The grid of the one NMOS pipe M1 connects the VT input VTUNE of trsanscondutance amplifier; The source ground of the one NMOS pipe M1, drain electrode connects the drain electrode of the 2nd PMOS pipe M2;

The 2nd PMOS pipe M2, the 3rd PMOS pipe M3, the 4th PMOS pipe M4, the 13 PMOS pipe M13, the 14 PMOS manage M14, the 15 PMOS pipe M15, the grid of the 16 PMOS pipe M16, the corresponding respectively connection of source electrode; And the grid of the 2nd PMOS pipe M2 is connected with the drain electrode of the 2nd PMOS pipe M2; The source electrode of the 2nd PMOS pipe M2 connects the supply voltage input VC of trsanscondutance amplifier;

The drain electrode of the 3rd PMOS pipe M3 connects the drain electrode of the 5th PMOS pipe M5, the source electrode of the 6th PMOS pipe M6 and the source electrode of the 7th PMOS pipe M7 respectively;

The drain electrode of the 4th PMOS pipe M4 connects the source electrode of the 5th PMOS pipe M5, the drain electrode of the 6th PMOS pipe M6 and the source electrode of the 8th PMOS pipe M8 respectively;

The drain electrode of the 13 PMOS pipe M13 connects the source electrode of the 9th PMOS pipe M9, the source electrode of the 11 PMOS pipe M11 and the drain electrode of the 12 PMOS pipe M12 respectively;

The drain electrode of the 14 PMOS pipe M14 connects the source electrode of the tenth PMOS pipe M10, the drain electrode of the 11 PMOS pipe M11 and the source electrode of the 12 PMOS pipe M12 respectively;

The drain electrode of the 15 PMOS pipe M15 connects the drain electrode of the 17 PMOS pipe M17, the source electrode of the 18 PMOS pipe M18 and the source electrode of the 19 PMOS pipe M19 respectively;

The drain electrode of the 16 PMOS pipe M16 connects the source electrode of the 17 PMOS pipe M17, the drain electrode of the 18 PMOS pipe M18 and the source electrode of the 20 PMOS pipe M20 respectively;

The grid of the grid of the grid of the grid of the 6th PMOS pipe M6, the 8th PMOS pipe M8, the 9th PMOS pipe M9 and the 11 PMOS pipe M11 all is connected with the normal phase input end VINP of trsanscondutance amplifier;

The grid of the grid of the grid of the grid of the tenth PMOS pipe M10, the 12 PMOS pipe M12, the 18 PMOS pipe M18 and the 19 PMOS pipe M19 all is connected with the negative-phase input VINN of trsanscondutance amplifier;

The equal ground connection of grid of the grid of the grid of the grid of the 5th PMOS pipe M5, the 7th PMOS pipe M7, the 17 PMOS pipe M17 and the 20 PMOS pipe M20;

The grid of the 21 NMOS pipe M21 is connected with the grid of the 22 NMOS pipe M22, and connects the common-mode feedback voltage end VCMFB of trsanscondutance amplifier; The source ground of the source electrode of the 21 NMOS pipe M21 and the 22 NMOS pipe M22;

The drain electrode of the drain electrode of the drain electrode of the drain electrode of the 7th PMOS pipe M7, the 9th PMOS pipe M9, the 19 PMOS pipe M19 and the 21 NMOS pipe M21 all is connected with the negative output VOUTN of trsanscondutance amplifier;

The drain electrode of the drain electrode of the drain electrode of the drain electrode of the 8th PMOS pipe M8, the tenth PMOS pipe M10, the 20 PMOS pipe M20 and the 22 NMOS pipe M22 all is connected with the positive output end VOUTP of trsanscondutance amplifier.

Trsanscondutance amplifier structure shown in Figure 1 adopts three groups of source degeneracy differential amplifiers to constitute; Wherein one group of amplifier is made up of the 7th PMOS pipe M7, the 8th PMOS pipe M8, the 5th PMOS pipe M5 and the 6th PMOS pipe M6; Second group of amplifier is made up of the 9th PMOS pipe M9, the tenth PMOS pipe M10, the 11 PMOS pipe M11 and the 12 PMOS pipe M12; The 3rd group of amplifier is made up of the 17 PMOS pipe, the 18 PMOS pipe, the 19 PMOS pipe and the 20 PMOS pipe; The output interconnection of three groups of amplifiers, thus can utilize the mode of current subtraction to eliminate the cubic term harmonic wave, thus realize the low-power consumption high linearity of trsanscondutance amplifier.

And then said trsanscondutance amplifier is applied to filter, in the time of for example in the Gm-C filter, can realize the low-power consumption high linearity of filter.

Trsanscondutance amplifier shown in Figure 1 is in the practical application scene; When needing trsanscondutance amplifier to realize the single-ended output of both-end input; Then the negative output of trsanscondutance amplifier can be connected with the common-mode feedback voltage end VCMFB of trsanscondutance amplifier, realizes that the both-end of trsanscondutance amplifier is imported single-ended output.

Perhaps, in the practical application scene, when needing trsanscondutance amplifier to realize the output of both-end input both-end; Generally need control, also promptly the voltage of the common-mode feedback voltage end VCMFB of trsanscondutance amplifier controlled, at this moment the common mode electrical level of trsanscondutance amplifier shown in Figure 1; Trsanscondutance amplifier shown in Figure 1 may further include common mode feedback circuit as shown in Figure 2; Form another kind of trsanscondutance amplifier structure, as shown in Figure 2, said common mode feedback circuit comprises:

The source electrode of the source electrode of the 23 PMOS pipe M23 and the 24 PMOS pipe M24 connects the supply voltage input VC of trsanscondutance amplifier; The grid of the 23 PMOS pipe M23 is connected the bias voltage end VBIAS of trsanscondutance amplifier with the grid of the 24 PMOS pipe M24;

The drain electrode of the 23 PMOS pipe M23 connects the source electrode of the 25 PMOS pipe M25 and the source electrode of the 26 PMOS pipe M26 respectively; The drain electrode of the 24 PMOS pipe M24 connects the source electrode of the 27 PMOS pipe M27 and the source electrode of the 28 PMOS pipe M28 respectively;

The grid of the 25 PMOS pipe M25 connects the positive output end VOUTP of trsanscondutance amplifier, and drain electrode connects the drain electrode of the 30 NMOS pipe M30 and the drain electrode of the 28 PMOS pipe M28;

The grid of the 26 PMOS pipe M26 is connected the reference voltage end VREF of trsanscondutance amplifier with the grid of the 27 PMOS pipe M27, drain electrode connects the drain electrode of the 27 PMOS pipe M27 and the drain electrode of the 29 NMOS pipe M29 respectively;

The grid of the 28 PMOS pipe M28 connects the negative output VOUTN of trsanscondutance amplifier;

The grid of the 29 NMOS pipe M29 is connected the common-mode feedback voltage end VCMFB of trsanscondutance amplifier with drain electrode; The source ground of the 29 NMOS pipe M29;

The grid of the 30 NMOS pipe M30 is connected source ground with drain electrode.

For circuit illustrated in figures 1 and 2; The voltage of the VT input VTUNE input of trsanscondutance amplifier can be a certain constant voltage, perhaps, also can be the adjustable voltage in a certain scope; Concrete voltage value can be confirmed according to applied environment in practical application, not limit here.

General, said bias voltage end VBIAS can connect the grid of the 2nd PMOS pipe M2, makes the voltage of bias voltage end VBIAS change with the voltage value of VT input VTUNE; Perhaps, also can import the voltage of a certain fixed value for bias voltage end VBIAS, concrete voltage value can be confirmed according to applied environment in practical application, not limit here.

General, can import the voltage of a certain fixed value for reference voltage end VREF, concrete voltage value can be confirmed according to applied environment in practical application, not limit here.

Supply voltage input VC generally connects the power supply of trsanscondutance amplifier, is used to each device power supply in the trsanscondutance amplifier.

Wherein, when in practical application, for example needing to use resistance or inductance in the filter like circuit, the trsanscondutance amplifier that can use above-mentioned trsanscondutance amplifier shown in Figure 1 or Fig. 1 and Fig. 2 to combine to obtain carries out the simulation of resistance or inductance.

Concrete, use both-end to import in the application scenarios of trsanscondutance amplifier of single-ended output at needs, can pass through trsanscondutance amplifier artifical resistance or inductance shown in Figure 1, make that resistance and the inductance in the circuit becomes active device from passive device; Trsanscondutance amplifier like Fig. 4 and the Fig. 1 of being shown in Figure 5 is simulated the electric resistance structure sketch map that obtains, and the trsanscondutance amplifier that is illustrated in figure 6 as Fig. 1 is simulated the induction structure sketch map that obtains;

Use in the application scenarios of trsanscondutance amplifier of both-end input both-end output at needs, can be through Fig. 1 combination obtains with Fig. 2 trsanscondutance amplifier artifical resistance or inductance; Be illustrated in figure 7 as the electric resistance structure sketch map that trsanscondutance amplifier simulation that Fig. 1 and Fig. 2 combine to obtain obtains.

As shown in Figure 3, the electric resistance structure that the trsanscondutance amplifier simulation obtains comprises:

Trsanscondutance amplifier gm, said trsanscondutance amplifier gm can use structure shown in Figure 1 to realize;

In addition, this resistance also comprises:

The negative output of trsanscondutance amplifier gm is connected (not shown) with the common-mode feedback voltage end of trsanscondutance amplifier gm;

The positive output end of trsanscondutance amplifier gm is connected with the negative-phase input of trsanscondutance amplifier gm, and the tie point of this connection is as first end of resistance;

The negative-phase input of trsanscondutance amplifier gm is as second end of resistance.

Wherein, this resistance can be used as earth resistance or floating earth resistance, and an end ground connection is arranged in first end of resistance described in Fig. 3 and second end, and when the other end connected other devices, this resistance was earth resistance; When first end of resistance all was connected other devices with second end, this resistance was floating earth resistance.

In the resistance shown in Figure 3; Only carry out the simulation of resistance through a trsanscondutance amplifier; In order to make trsanscondutance amplifier simulate the more approaching actual resistance of performance of the resistance that obtains; In practical application, can also realize the simulation of resistance through two trsanscondutance amplifiers shown in Figure 1, as shown in Figure 4, this electric resistance structure comprises:

Two trsanscondutance amplifiers shown in Figure 1 are respectively the first trsanscondutance amplifier gm1 and the second trsanscondutance amplifier gm2, wherein,

The negative output of the first trsanscondutance amplifier gm1 is connected (not shown) with the common-mode feedback voltage end of the first trsanscondutance amplifier gm1; The negative output of the second trsanscondutance amplifier gm2 is connected (not shown) with the common-mode feedback voltage end of the second trsanscondutance amplifier gm2;

The positive output end of the first trsanscondutance amplifier gm1 is as first end of resistance, and the normal phase input end of the first trsanscondutance amplifier gm1 is as second end of resistance;

The positive output end of the normal phase input end of the positive output end of the first trsanscondutance amplifier gm1, the second trsanscondutance amplifier gm2 and the second trsanscondutance amplifier gm2 interconnects; The negative-phase input of the normal phase input end of the positive output end of the negative-phase input of the second trsanscondutance amplifier gm2, the second trsanscondutance amplifier gm2, the first trsanscondutance amplifier gm1, the first trsanscondutance amplifier gm1 interconnects.

The inductance that Fig. 5 obtains for trsanscondutance amplifier simulation shown in Figure 1, as shown in Figure 5, this inductance comprises:

Trsanscondutance amplifier shown in two Fig. 1 is respectively the first trsanscondutance amplifier gm1 and the second trsanscondutance amplifier gm2, wherein,

The negative output of the first trsanscondutance amplifier gm1 is connected (not shown) with the common-mode feedback voltage end of the first trsanscondutance amplifier gm1; The negative output of the second trsanscondutance amplifier gm2 is connected (not shown) with the common-mode feedback voltage end of the second trsanscondutance amplifier gm2;

First end of said inductance passes through first capacitor C, 1 ground connection, and is connected with the positive output end of the first trsanscondutance amplifier gm1, the normal phase input end of the second trsanscondutance amplifier gm2 respectively; Second end of inductance is connected with the normal phase input end of the first trsanscondutance amplifier gm1, the positive output end of the second trsanscondutance amplifier gm2 respectively;

The negative-phase input ground connection of the first trsanscondutance amplifier gm1, the negative-phase input ground connection of the second trsanscondutance amplifier gm2.

Fig. 6 is the resistance sketch map that the trsanscondutance amplifier simulation obtains, and comprising:

Trsanscondutance amplifier gm, this trsanscondutance amplifier can be realized through the trsanscondutance amplifier that Fig. 1 and Fig. 2 combine to obtain;

This resistance also comprises:

The normal phase input end of trsanscondutance amplifier gm is connected with the negative output of trsanscondutance amplifier gm, and the tie point of this connection is as first end of said resistance;

The negative-phase input of trsanscondutance amplifier gm is connected with the positive output end of trsanscondutance amplifier gm, and the tie point of this connection is as second end of said resistance.

Above Fig. 3 ~ resistance and inductance shown in Figure 6 is active device; Passive resistance and passive inductance in can corresponding replacement circuit in practical application; For example in 7 rank elliptic filter structures shown in Figure 7, promptly can use Fig. 3 or Fig. 4 or resistance shown in Figure 6 to realize resistance R 1 and R2 among Fig. 7, and not use passive resistance; Use the inductance among Fig. 5 to realize inductance L 1, L2, L3 among Fig. 7, and do not use passive inductance.Because the low-power consumption high linearity of trsanscondutance amplifier wherein; Therefore; Guaranteed by the said resistance of said trsanscondutance amplifier realization and the low-power consumption and the high linearity of inductance, and then with respect to the circuit that uses passive resistance and/or inductance, for example filter; The characteristics such as cut-off frequency, the linearity that comprise the filter of said resistance and/inductance make that not with the influence of factors such as temperature, process corner filter power consumption is low and the linearity is high.

Certainly, filter shown in Figure 7 is merely for example, and the application's resistance and inductance can also be applied to other filters, even in other the circuit structure that comprises resistance and/or inductance, can reduce the power consumption of these circuit equally, improves the linearity.

For the filter that comprises said resistance of the application and/or inductance, said filter may further include: the phase-locked loop tuner, and as shown in Figure 8, said phase-locked loop tuner can comprise:

The output of voltage controlled oscillator 810 connects the first input end of phase frequency detector 820, and second input of phase frequency detector 820 receives reference frequency signal; The input of the output of phase frequency detector 820 through charge pump 830 linkloop filters 840, the output of loop filter 840 connect the VT input VTUNE of each trsanscondutance amplifier in input and the filter of voltage controlled oscillator 810 respectively.

Said voltage controlled oscillator 810 is used to produce a signal source.The frequency of oscillation of said voltage controlled oscillator 810 changes with filter cutoff frequency.

The said trsanscondutance amplifier of the application embodiment is formed two non-damping integrators, connects into the positive feedback form, has just formed said voltage controlled oscillator 810.Its frequency of oscillation is along with the various characteristics of trsanscondutance amplifier, gain bandwidth product for example, and common-mode rejection ratio or the like changes, thereby follows the tracks of and reflected trsanscondutance amplifier and overall filter cut-off frequency characteristic through its output voltage frequency.

Phase frequency detector 820 is used for the output signal of voltage controlled oscillator 810 outputs and the frequency and the phase place of reference frequency signal are compared at numeric field, exports a succession of digital high-low signal, through the charging and the discharge of said digital high-low signal control charge pump 830.

Charge pump 830 is used under the output signal controlling of phase frequency detector 820, charging and discharging; Concrete; Be to convert digital signal into analog signal, again this analog signal fed back to voltage controlled oscillator 810 after through loop filter 840 filtering, form closed loop work.

Loop filter 840 is used for the analog signal of charge pump 830 outputs is carried out smothing filtering.

Can reduce the burr and the signal jitter of the analog signal of charge pump 830 outputs through said filtering, thereby reduce the accuracy of phase noise, the whole phase-locked loop tuning circuit of lifting.

Wherein, Said voltage controlled oscillator 810, phase frequency detector 820, charge pump 830 and loop filter 840 have constituted the phase-locked loop tuner; Can realize in the trsanscondutance amplifier the tuning of input voltage among the VT input VTUNE, and then under less power consumption condition, guarantee the precision of tuning precision and filter cutoff frequency.

For example, said phase-locked loop tuner specifically can realize through structure shown in Figure 9, wherein:

The output of voltage controlled oscillator connects the first input end of multiplier; Second input of multiplier receives reference frequency signal; The output of multiplier connects the input of low pass filter; First output of low pass filter connects the input of voltage controlled oscillator, and second output of low pass filter connects the VT input of each trsanscondutance amplifier in the filter.Loop filter 840 realizes through said low pass filter, and said phase frequency detector 820, charge pump 830 are realized through said multiplier.

At last, the cubic term harmonic wave of principle can eliminate to(for) the trsanscondutance amplifier shown in Fig. 1 describes:

Analyze for simplifying, transconductance amplifier circuit shown in Figure 1 is reduced to circuit diagram structure shown in figure 10.Wherein each little module is represented one group of differential amplifier in the trsanscondutance amplifier, and the numerical value on it is represented the relative scale size of its mutual conductance.

Because input signal is made up of difference mode signal and common-mode signal components; Visible by Figure 10, wherein two differential amplifiers input end grounding can be known through deriving; Because the cross-couplings connected mode of output, integrated circuit still can be used as a fully differential circuit and use.

Suppose size of current with flow to as shown in Figure 1, the output current i that trsanscondutance amplifier is total _oFor:

i _o=i ₀₁-i ₀₂-i ₀₃ （1）

Wherein, i _oTotal output current of expression trsanscondutance amplifier is because the employing of the trsanscondutance amplifier among Fig. 1 is that both-end is imported both-end output form, the total current i of output _oBe the poor of three output branch currents, i _O1Represent the half the of first group of amplifier output current that the 7th PMOS pipe M7 and the 8th PMOS pipe M8 constitutes, i _O2Represent the half the of second group of amplifier output current that the 9th PMOS pipe M9 and the tenth PMOS pipe M10 constitutes; i _O3Represent the half the of second group of amplifier output current that the 19 PMOS pipe M9 and the 20 PMOS pipe M10 constitutes; Here the output current that defines three amplifiers is in order to prove the feasibility of high linearity from mathematics.

Suppose that metal-oxide-semiconductors all in the circuit all works in the saturation region, then according to leakage current saturation region formula:

i _d=K(v _g-v _s-V _th) ²（2）

$K=\frac{1}{2}\mathrm{\μ}{C}_{\mathrm{ox}}\left(\frac{W}{L}\right)---\left(3\right)$

Wherein, i _dThe drain electrode output current of representing single metal-oxide-semiconductor; K representes the current coefficient of metal-oxide-semiconductor under certain technology, and it is the parameter by the breadth length ratio W/L decision of technology and metal-oxide-semiconductor, as long as technology and breadth length ratio confirm that it is exactly a definite value; Vg is meant the grid voltage of metal-oxide-semiconductor; Vs refers to the source class voltage of metal-oxide-semiconductor; Vth refers to the threshold voltage of metal-oxide-semiconductor, and it also is the parameter by the technology decision; W representes the width of metal-oxide-semiconductor, and L representes the length of metal-oxide-semiconductor; μ is a carrier mobility, C _OxBe unit are gate oxidation district electric capacity.

According to g _mRelation with the direct current saturation voltage:

g _m=2KV _dssat （4）

$V_{\mathrm{dssat}}=V_g-V_s-V_{\mathrm{th}}=\sqrt{\frac{I_d}{2K}}---\left(5\right)$

Wherein, W representes the width of metal-oxide-semiconductor, and L representes the length of metal-oxide-semiconductor; V _DssatThe direct current saturation voltage of expression metal-oxide-semiconductor; In Fig. 1; Each root metal-oxide-semiconductor all has its direct current saturation voltage, and this direct current saturation voltage can influence the operating state (saturation region, linear zone, sub-threshold region, cut-off region) of every metal-oxide-semiconductor, and then influences each item performance of trsanscondutance amplifier.

In order to simplify analytic process, adopt Taylor series at v _In=0 with v _InExpansion can obtain

$i_0=\underset{n=0}{\mathrm{\Σ}}{G}_{M(2n+1)}\·{v_{\mathrm{in}}}^{2n+1}---\left(6\right)$

Wherein $G_{\mathrm{Mj}}=\frac{{\mathrm{<figure-callout\; id="2"\; label="g\; m"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_m}{2^{2(j-1)}{V_{\mathrm{Dssat}}}^{j-1}}---\left(7\right);$

Definition source degeneracy factor

wherein

is managed M5 for working in dark triode region five PMOS; The 6th PMOS manages M6; The 11 PMOS manages M11; The 12 PMOS manages M12; The 17 PMOS manages M17; The equivalent resistance of the 18 PMOS pipe M18.Analysis is simplified in formula (6) and formula (7) substitution (1) can be got (only consider once and cubic term):

$i_o=\frac{G_{M1}}{{\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}+1}(\frac{3}{7}(\frac{v_{\mathrm{in}}}{2}+v_{\mathrm{cm}})-\frac{3}{7}(-\frac{v_{\mathrm{in}}}{2}+v_{\mathrm{cm}})-\frac{1}{7}{v}_{\mathrm{in}})$

$-\frac{G_{M3}}{{({\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}+1)}^4}(\frac{3}{7}{(\frac{v_{\mathrm{in}}}{2}+v_{\mathrm{cm}})}^3-\frac{3}{7}{(-\frac{v_{\mathrm{in}}}{2}+v_{\mathrm{cm}})}^3-\frac{1}{7}{v_{\mathrm{in}}}^3)$

$-\frac{G_{M5}+\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}(G_{M1}{G}_{M5}-3{G_{M3}}^2)}{{\left({\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}+1\right)}^7}(\frac{3}{7}{(\frac{v_{\mathrm{in}}}{2}+v_{\mathrm{cm}})}^5-\frac{3}{7}{(-\frac{v_{\mathrm{in}}}{2}+v_{\mathrm{cm}})}^5-\frac{1}{7}{v_{\mathrm{in}}}^5)---\left(8\right)$

Abbreviation can get:

$i_o=\frac{2}{7}\frac{G_{M1}}{({\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}+1)}{v}_{\mathrm{in}}$

$-\frac{6}{7}\frac{G_{M3}}{{({\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}+1)}^4}{v}_{\mathrm{in}}{{\mathrm{<figure-callout\; id="2"\; label="v\; cm"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">v</figure-callout>}}_{\mathrm{cm}}}^2$

$+\frac{13}{112}\frac{G_{M5}+\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}(G_{M1}{G}_{M5}-{{3G}_{M3}}^2)}{{({\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}+1)}^7}{v_{\mathrm{in}}}^5$

Under deep submicron process, v _CmMuch smaller than 1, then the triple-frequency harmonics item of trsanscondutance amplifier can be similar to elimination, only remaining less quintuple harmonics component, and total harmonic distortion (THD) will reduce greatly.Total harmonic distortion can be similar to as follows:

$\mathrm{THD}=\frac{13(G_{M5}+\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_{\mathrm{5,6,11,12,17,18}}}(G_{M1}{G}_{M5}-{{3G}_{M3}}^2))}{28G_{M1}{(1+{\mathrm{<figure-callout\; id="1"\; label="G\; M"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">G</figure-callout>}}_M\frac{1}{{\mathrm{<figure-callout\; id="12"\; label="g\; m"\; filenames="HDA00001797912200011.png"\; state="\{\{state\}\}">g</figure-callout>}}_m})}^6}{v_{\mathrm{in}}}^4.$

Can know that based on above analysis trsanscondutance amplifier shown in Figure 1 can be similar to eliminates the triple-frequency harmonics item, improves THD.And then, can under low-power consumption, guarantee the high linearity.

In addition; The trsanscondutance amplifier of the application embodiment is formed by the source degeneracy trsanscondutance amplifier cross-couplings of three different proportions, can be under the deep-submicron CMOS process condition; Realize the very high linearity with lower power consumption condition, its linearity is very little with changes in environmental conditions.

The trsanscondutance amplifier of the application embodiment and/or resistance and/or inductance can be applicable in the various existing circuit, and filter especially is for example in the Gm-C filter, to satisfy the especially high requirement of zero intermediate frequency reciver system linear degree of receiver system; In addition, said trsanscondutance amplifier can also be applied to satisfy both requirements to high linearity in transmission of mobile video signal and the switched-capacitor circuit.And, when being applied in the Gm-C filter, can under less power consumption condition, guarantee tuning precision and filter cutoff frequency precision.

The element of transconductance amplifier circuit all adopts the CMOS transistor, does not use other elements such as resistance, matees in the sheet thereby can reach preferably.

In addition, the trsanscondutance amplifier of the application embodiment can adapt to lower supply voltage under deep sub-micron CMOS standard process, meet current low voltage CMOS trend, and lower supply voltage helps to promote the trsanscondutance amplifier linearity.

The above only is the application's a preferred implementation; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the application's principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the application's protection range.

Claims (8)

1. a trsanscondutance amplifier is characterized in that, comprising:

The grid of the one NMOS pipe connects the VT input of trsanscondutance amplifier; The source ground of the one NMOS pipe, drain electrode connects the drain electrode of the 2nd PMOS pipe;

The grid that the 2nd PMOS manages, the 3rd PMOS manages, the 4th PMOS manages, the 13 PMOS manages, the 14 PMOS manages, the 15 PMOS manages, the 16 PMOS manages, the connection of source electrode difference correspondence; And the grid of the 2nd PMOS pipe is connected with the drain electrode of the 2nd PMOS pipe; The source electrode of the 2nd PMOS pipe connects the supply voltage input of trsanscondutance amplifier;

The drain electrode of the 3rd PMOS pipe connects the drain electrode of the 5th PMOS pipe, the source electrode of the 6th PMOS pipe and the source electrode of the 7th PMOS pipe respectively;

The drain electrode of the 4th PMOS pipe connects the source electrode of the 5th PMOS pipe, the drain electrode of the 6th PMOS pipe and the source electrode of the 8th PMOS pipe respectively;

The drain electrode of the 13 PMOS pipe connects the source electrode of the 9th PMOS pipe, the source electrode of the 11 PMOS pipe and the drain electrode of the 12 PMOS pipe respectively;

The drain electrode of the 14 PMOS pipe connects the source electrode of the tenth PMOS pipe, the drain electrode of the 11 PMOS pipe and the source electrode of the 12 PMOS pipe respectively;

The drain electrode of the 15 PMOS pipe connects the drain electrode of the 17 PMOS pipe, the source electrode of the 18 PMOS pipe and the source electrode of the 19 PMOS pipe respectively;

The drain electrode of the 16 PMOS pipe connects the source electrode of the 17 PMOS pipe, the drain electrode of the 18 PMOS pipe and the source electrode of the 20 PMOS pipe respectively;

The grid of the grid of the grid of the grid of the 6th PMOS pipe, the 8th PMOS pipe, the 9th PMOS pipe and the 11 PMOS pipe all is connected with the normal phase input end of trsanscondutance amplifier;

The grid of the grid of the grid of the grid of the tenth PMOS pipe, the 12 PMOS pipe, the 18 PMOS pipe and the 19 PMOS pipe all is connected with the negative-phase input of trsanscondutance amplifier;

The equal ground connection of grid of the grid of the grid of the grid of the 5th PMOS pipe, the 7th PMOS pipe, the 17 PMOS pipe and the 20 PMOS pipe;

The grid of the 21 NMOS pipe is connected with the grid of the 22 NMOS pipe, and connects the common-mode feedback voltage end of trsanscondutance amplifier; The source ground of the source electrode of the 21 NMOS pipe and the 22 NMOS pipe;

The drain electrode of the drain electrode of the drain electrode of the drain electrode of the 7th PMOS pipe, the 9th PMOS pipe, the 19 PMOS pipe and the 21 NMOS pipe all is connected with the negative output of trsanscondutance amplifier;

The drain electrode of the drain electrode of the drain electrode of the drain electrode of the 8th PMOS pipe, the tenth PMOS pipe, the 20 PMOS pipe and the 22 NMOS pipe all is connected with the positive output end of trsanscondutance amplifier.

2. trsanscondutance amplifier according to claim 1 is characterized in that, also comprises:

The source electrode of the source electrode of the 23 PMOS pipe and the 24 PMOS pipe connects the supply voltage input of trsanscondutance amplifier; The grid of the 23 PMOS pipe is connected the bias voltage end with the grid of the 24 PMOS pipe;

The drain electrode of the 23 PMOS pipe connects the source electrode of the 25 PMOS pipe and the source electrode of the 26 PMOS pipe respectively; The drain electrode of the 24 PMOS pipe connects the source electrode of the 27 PMOS pipe and the source electrode of the 28 PMOS pipe respectively;

The grid of the 25 PMOS pipe connects the positive output end of trsanscondutance amplifier, and drain electrode connects the drain electrode of the 30 NMOS pipe and the drain electrode of the 28 PMOS pipe;

The grid of the 26 PMOS pipe is connected reference voltage end with the grid of the 27 PMOS pipe, and drain electrode connects the drain electrode of the 27 PMOS pipe and the drain electrode of the 29 NMOS pipe respectively;

The grid of the 28 PMOS pipe connects the negative output of trsanscondutance amplifier;

The grid of the 29 NMOS pipe is connected the common-mode feedback voltage end with drain electrode; The source ground of the 29 NMOS pipe;

The grid of the 30 NMOS pipe is connected source ground with drain electrode.

3. a resistance is characterized in that, comprises the described trsanscondutance amplifier of claim 1, wherein,

The negative output of trsanscondutance amplifier is connected with the common-mode feedback voltage end of trsanscondutance amplifier;

The positive output end of trsanscondutance amplifier is connected with the negative-phase input of trsanscondutance amplifier, and the tie point of this connection is as first end of resistance;

The negative-phase input of trsanscondutance amplifier is as second end of resistance.

4. a resistance is characterized in that, comprises the described trsanscondutance amplifier of claim 2, wherein,

The normal phase input end of trsanscondutance amplifier is connected with the negative output of trsanscondutance amplifier, and the tie point of this connection is as first end of said resistance;

The negative-phase input of trsanscondutance amplifier is connected with the positive output end of trsanscondutance amplifier, and the tie point of this connection is as second end of said resistance.

5. a resistance is characterized in that, comprises two described trsanscondutance amplifiers of claim 1, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

The positive output end of first trsanscondutance amplifier is as first end of resistance, and the normal phase input end of first trsanscondutance amplifier is as second end of resistance;

The positive output end of the normal phase input end of the positive output end of first trsanscondutance amplifier, second trsanscondutance amplifier and second trsanscondutance amplifier interconnects; The negative-phase input of the normal phase input end of the positive output end of the negative-phase input of second trsanscondutance amplifier, second trsanscondutance amplifier, first trsanscondutance amplifier, first trsanscondutance amplifier interconnects.

6. an inductance is characterized in that, comprises two described trsanscondutance amplifiers of claim 1, is respectively first trsanscondutance amplifier and second trsanscondutance amplifier, wherein,

The negative output of first trsanscondutance amplifier is connected with the common-mode feedback voltage end of first trsanscondutance amplifier; The negative output of second trsanscondutance amplifier is connected with the common-mode feedback voltage end of second trsanscondutance amplifier;

First end of inductance passes through first capacity earth, and is connected with the positive output end of first trsanscondutance amplifier, the normal phase input end of second trsanscondutance amplifier respectively; Second end of inductance is connected with the normal phase input end of first trsanscondutance amplifier, the positive output end of second trsanscondutance amplifier respectively;

The negative-phase input ground connection of first trsanscondutance amplifier, the negative-phase input ground connection of second trsanscondutance amplifier.

7. a filter is characterized in that, comprises each described trsanscondutance amplifier of claim 1 to 2, and/or, each described resistance of claim 3 to 5, and/or, the described inductance of claim 6.

8. filter as claimed in claim 7 is characterized in that, also comprises the phase-locked loop tuner, wherein,

The output of voltage controlled oscillator connects the first input end of phase frequency detector, and second input of phase frequency detector receives reference frequency signal; The output of phase frequency detector is through the input of charge pump linkloop filter, and the output of loop filter connects the input of voltage controlled oscillator and the VT input in the filter respectively.

Images