CN102739167A - Design method for microwave amplifier - Google Patents
Design method for microwave amplifier Download PDFInfo
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- CN102739167A CN102739167A CN2012102360661A CN201210236066A CN102739167A CN 102739167 A CN102739167 A CN 102739167A CN 2012102360661 A CN2012102360661 A CN 2012102360661A CN 201210236066 A CN201210236066 A CN 201210236066A CN 102739167 A CN102739167 A CN 102739167A
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Abstract
The invention discloses a design method for a microwave amplifier, belonging to the technical field of circuit design. The design method comprises the following steps of: fitting input or output impedance of a transistor within a target frequency range; obtaining an equivalent network of the input or output impedance by using a numerical calculation method; constructing a conjugated network corresponding to the equivalent network, and connecting the conjugated network with the transistor; optimizing the conjugated network to obtain an optimal input or output conjugated network; obtaining an optimal input or output equivalent network according to the optimal input or output conjugated network; matching the optimal input or output equivalent network with terminating impedance, so as to obtain an optimal matching network; and connecting the optimal matching network with the transistor, so as to complete the design of the amplifier. The design method is high in design efficiency, is beneficial to directly showing mutual influences between input and output, and can sufficiently express the properties of the transistor.
Description
Technical field
The present invention relates to the circuit design technique field, particularly a kind of method for designing of microwave amplifier.
Background technology
In the modern age microwave system, amplifier is one of microwave function circuit of extensively existing of fundamental sum.Early stage microwave amplifier depends on such as electron tubes such as klystron and travelling wave tube or based on the solid-state reflection amplifier of the negative resistance charactertistic of tunnel diode or variable capacitance diode.But since the seventies in 20th century, what most of radio frequencies and microwave amplifier used all is transistor devices, for example Si, SiGe BJT, GaAs HBT, GaAs, InP FET and GaN HEMT etc.
Microwave circuit be the transmission or the conversion of energy at all, its key problem is the relation of impedance, frequency and the power of correct handling circuit, the three is not only separate but also influence each other.Therefore, in the RF circuit, the design of impedance matching network is most important.Simultaneously, because the roll off of gain characteristic of semiconductor transistor, high-frequency amplifier then needs more careful consideration when design.
In traditional microwave amplifier design; The method that generally adopts is according to the Design of Amplifier index; Utilize eda tool to go out to design initial input or output impedance matching networks in center frequency point; And then matching network linked to each other with transistor and optimize, this method is generally used for one-stage amplifier or has the Amplifier Design of the matching network of less element.But if the complex structure of amplifier, during like the form of multi-stage cascade, amplifier removes has the matching network of inputing or outputing, and also has at least one inter-stage matching network.Sometimes, consider, also need multistage matching network from The Wide-Band Design or other performances; At this moment; Matching element just increases rapidly, because transistor is different from the simple linear characteristic of passive component with frequency variation characteristics, in this case; If still utilize eda tool that entire circuit is designed; Efficient is very low, and is unfavorable for embodying intuitively influencing each other and give full play to transistorized performance between inputing or outputing, and causes wasting the generation of the phenomenons such as preciousness gain of high frequency transistor.
Summary of the invention
In order to address the above problem, the present invention proposes a kind of raising design efficiency, help embodying intuitively influencing each other between inputing or outputing and also can give full play to the method for designing of the microwave amplifier of transistor performance.
The method for designing of microwave amplifier provided by the invention may further comprise the steps:
The match transistor inputs or outputs impedance in range of target frequencies;
Adopt numerical method to obtain the said equivalent network that inputs or outputs impedance;
Construct " conjugation " network corresponding, and said " conjugation " network is linked to each other with said transistor with said equivalent network;
Said " conjugation " network is optimized, obtains the best and input or output " conjugation " network;
Inputing or outputing " conjugation " network according to said the best obtains the best and inputs or outputs equivalent network;
Said the best is inputed or outputed equivalent network match termination impedance, obtain the optimum Match network; Said optimum Match network is linked to each other with transistor, accomplish Design of Amplifier.
As preferably, when said amplifier is casacade multi-amplifier, also comprise inter-stage optimum Match network, said inter-stage optimum Match network is that the best output matching network that one-level best input matching network in back matches previous stage is obtained.
As preferably, the input or output impedance of said match transistor in range of target frequencies may further comprise the steps:
Utilize eda tool to obtain transistor and under different frequency, input or output impedance;
Adopt multi-parameter equivalent network match transistor in range of target frequencies, to input or output impedance.
As preferably, said multi-parameter equivalent network comprises resistance and reactance component.
As preferably, said reactance component comprises electric capacity.
As preferably, said reactance component also comprises inductance.
As preferably, " conjugation " network of said equivalent network is under the constant situation of equivalent network topology connected mode, the reactance component in the said equivalent network is got numerically " bearing " obtain.
As preferably, it is under the constant situation of equivalent network topology connected mode that said the best inputs or outputs equivalent network, said the best is inputed or outputed reactance component in " conjugation " network get numerically that " bearing " obtain.
As preferably, said transistor comprises the tube core after naked pipe core, the encapsulation, and through the tube core of coupling in advance, perhaps, source electrode, grid or drain electrode have the tube core of feedback element.
The designing method efficient of microwave amplifier provided by the invention is high, helps embodying intuitively influencing each other between inputing or outputing and also can give full play to transistor performance.
Description of drawings
Fig. 1 is the theory structure simplified schematic diagram of the two-stage cascade amplifier of the designing method of the microwave amplifier that provides according to the embodiment of the invention;
Two parameter input impedance equivalent network topological structure sketch mapes in the method for designing of the microwave amplifier that Fig. 2 provides for the embodiment of the invention;
Two parameter output impedance equivalent network topological structure sketch mapes in the method for designing of the microwave amplifier that Fig. 3 provides for the embodiment of the invention;
Three parameter input impedance equivalent network topological structure sketch mapes in the method for designing of the microwave amplifier that Fig. 4 provides for the embodiment of the invention;
Three parameter output impedance equivalent network topological structure sketch mapes in the method for designing of the microwave amplifier that Fig. 5 provides for the embodiment of the invention;
The building method sketch map of " conjugation " network in the method for designing of the microwave amplifier that Fig. 6 provides for the embodiment of the invention;
" conjugation " network and structural representation after transistor links to each other in the method for designing of the microwave amplifier that Fig. 7 provides for the embodiment of the invention;
Best input equivalent network matches the structural representation of the input matching network of termination impedance in the method for designing of the microwave amplifier that Fig. 8 provides for the embodiment of the invention;
The structural representation of the inter-stage matching network in the method for designing of the microwave amplifier that Fig. 9 provides for the embodiment of the invention between the best output equivalent network of back one-level transistor best input equivalent network and previous stage transistor;
Best output equivalent network matches the structural representation of the output matching network of termination impedance in the method for designing of the microwave amplifier that Figure 10 provides for the embodiment of the invention;
Figure 11 is the theory structure sketch map of the two-stage cascade amplifier of the designing method of the microwave amplifier that provides according to the embodiment of the invention;
Figure 12 is integral body Computer Simulation small signal S-parameters curve before optimization of the two-stage cascade amplifier of the designing method of the microwave amplifier that provides according to the embodiment of the invention; Wherein, solid line is represented dB (S (2,1)); Chain-dotted line is represented dB, and (S (1; 1)), dotted line is represented dB (S (2,2)).
Embodiment
In order to understand the present invention in depth, the present invention is elaborated below in conjunction with accompanying drawing and specific embodiment.
The method for designing of microwave amplifier provided by the invention may further comprise the steps:
Step 1: the match transistor inputs or outputs impedance in range of target frequencies.
Step 1.1: utilize eda tool to obtain FET1 and FET2 and under different frequency, input or output impedance.In the present embodiment; The transistorized microwave test of based semiconductor; In ADS, utilize Smith Chart Utility or Matching Utility to obtain the corresponding resistance that inputs or outputs impedance of FET1 and FET2 and reactance component with frequency variation curve, through the range of target frequencies of this curve acquisition FET1 and FET2.
Step 1.2: adopt multi-parameter equivalent network match FET1 and FET2 in range of target frequencies, to input or output impedance.
Wherein, the multi-parameter equivalent network comprises resistance and reactance component.
Wherein, reactance component comprises electric capacity.
Wherein, reactance component also comprises inductance, so that the equivalent network that inputs or outputs impedance that under the very wide situation of the frequency range of transistor load impedance, obtains has the higher goodness of fit.。
Step 2: adopt numerical method to obtain to input or output the equivalent network of impedance; Referring to accompanying drawing 2～5; Wherein, Accompanying drawing 2 is the two parameter input impedance equivalent network topological structure sketch mapes that comprise resistance and electric capacity; Accompanying drawing 3 is the two parameter output impedance equivalent network topological structure sketch mapes that comprise resistance and electric capacity, and accompanying drawing 4 is the three parameter input impedance equivalent network topological structure sketch mapes that comprise resistance, electric capacity and inductance, and accompanying drawing 5 is the three parameter output impedance equivalent network topological structure sketch mapes that comprise resistance, electric capacity and inductance.In the practice, the equivalent network topological structure is according to the function needs, inserts, chooses at a distance from straight, harmonic wave inhibition etc. like imaginary part absorption, biasing.
Step 3: under the constant situation of equivalent network topology connected mode, the reactance component in the equivalent network is numerically got " bear " construct " conjugation " network corresponding, referring to accompanying drawing 6 with equivalent network; Wherein, " bear " electric capacity and perhaps " bear " inductance, only have the numerical value meaning, and do not represent actual capacitance value or inductance value; And " conjugation " network linked to each other with transistor, referring to accompanying drawing 7.
Step 4: " conjugation " network is optimized, promptly the numerical value of each parameter in " conjugation " network is adjusted, obtain the best and input or output " conjugation " network.
Step 5: the best is inputed or outputed reactance component in " conjugation " network and get " bearing " and obtain the best and input or output equivalent network.
Step 6: the best is inputed or outputed equivalent network match termination impedance, in the present embodiment, termination impedance is the resistance of 50 Ω; Obtain the optimum Match network; Referring to accompanying drawing 8～10, wherein, Fig. 8 matches the structural representation of the input matching network of termination impedance for best input equivalent network; Fig. 9 is the structural representation of the inter-stage matching network between back one-level transistor best input equivalent network and the best output equivalent network of previous stage transistor; Figure 10 matches the structural representation of the output matching network of termination impedance for best output equivalent network.The optimum Match network is linked to each other with transistor, accomplish Design of Amplifier, referring to accompanying drawing 1.In the present embodiment, referring to accompanying drawing 11, shown in the final principle schematic of two-stage cascade amplifier TL1～TL12 be microstrip line, electric capacity except that C5～C8 as the shunt capacitance, other electric capacity are all participated in coupling.
Wherein, transistor can comprise the tube core after transistor comprises naked pipe core, encapsulation, and through the tube core that matees in advance, perhaps, source electrode, grid or drain electrode have the tube core of feedback element.
With the two poles of the earth cascade amplifier that obtains at last, without any tuning optimization, directly emulation can obtain small signal S-parameters curve shown in figure 12 in ADS.Can know that by simulation result figure adopt the exemplary two-stage amplifier of method design disclosed by the invention almost to need not just to have obtained extraordinary result through loaded down with trivial details tuning optimization again, bandwidth surpasses the 4GHz (8 ~ 12GHz) of expection; And fine its mid point of gain flatness m10 place frequency is 7.000GHz; DB (S (2,1)) is 23.041, and some m15 place frequency is 12.50GHz; DB (S (1,1)) is 21.224.
Above-described embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. the method for designing of a microwave amplifier is characterized in that, may further comprise the steps:
The match transistor inputs or outputs impedance in range of target frequencies;
Adopt numerical method to obtain the said equivalent network that inputs or outputs impedance;
Construct " conjugation " network corresponding, and said " conjugation " network is linked to each other with said transistor with said equivalent network;
Said " conjugation " network is optimized, obtains the best and input or output " conjugation " network;
Inputing or outputing " conjugation " network according to said the best obtains the best and inputs or outputs equivalent network;
Said the best is inputed or outputed equivalent network match termination impedance, obtain the best and input or output matching network; Said optimum Match network is linked to each other with transistor, accomplish Design of Amplifier.
2. method for designing according to claim 1; It is characterized in that; When said amplifier is casacade multi-amplifier, also comprise inter-stage optimum Match network, said inter-stage optimum Match network is that the best output matching network that one-level best input matching network in back matches previous stage is obtained.
3. method for designing according to claim 1 is characterized in that, the input or output impedance of said match transistor in range of target frequencies may further comprise the steps:
Utilize eda tool to obtain transistor and under different frequency, input or output impedance;
Adopt multi-parameter equivalent network match transistor in range of target frequencies, to input or output impedance.
4. method for designing according to claim 3 is characterized in that, said multi-parameter equivalent network comprises resistance and reactance component.
5. method for designing according to claim 4 is characterized in that said reactance component comprises electric capacity.
6. method for designing according to claim 5 is characterized in that said reactance component also comprises inductance.
7. method for designing according to claim 1 is characterized in that, " conjugation " network of said equivalent network is under the constant situation of equivalent network topology connected mode, the reactance component in the said equivalent network is got numerically " bearing " obtain.
8. method for designing according to claim 1; It is characterized in that; It is under the constant situation of equivalent network topology connected mode that said the best inputs or outputs equivalent network, said the best is inputed or outputed reactance component in " conjugation " network get numerically that " bearing " obtain.
9. method for designing according to claim 1 is characterized in that, said transistor comprises the tube core after naked pipe core, the encapsulation, and through the tube core that matees in advance, perhaps, source electrode, grid or drain electrode have the tube core of feedback element.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103391051A (en) * | 2013-07-03 | 2013-11-13 | 吴江市同心电子科技有限公司 | Microstrip line matching low noise amplifier |
| CN108052733A (en) * | 2017-12-11 | 2018-05-18 | 湖南时变通讯科技有限公司 | A kind of circuit design method and device |
| CN110231614A (en) * | 2019-07-05 | 2019-09-13 | 电子科技大学 | Microwave ranging system based on passive frequency conversion |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010045867A1 (en) * | 2000-05-19 | 2001-11-29 | Fujitsu Limited | Microwave amplifier |
| CN1564457A (en) * | 2004-03-26 | 2005-01-12 | 清华大学 | Optimized design method of microwave amplifying circuit |
| CN101567670A (en) * | 2009-05-18 | 2009-10-28 | 南京赛格微电子科技有限公司 | Method for realizing broadband multi-target low-noise amplifier |
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2012
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010045867A1 (en) * | 2000-05-19 | 2001-11-29 | Fujitsu Limited | Microwave amplifier |
| CN1564457A (en) * | 2004-03-26 | 2005-01-12 | 清华大学 | Optimized design method of microwave amplifying circuit |
| CN101567670A (en) * | 2009-05-18 | 2009-10-28 | 南京赛格微电子科技有限公司 | Method for realizing broadband multi-target low-noise amplifier |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103391051A (en) * | 2013-07-03 | 2013-11-13 | 吴江市同心电子科技有限公司 | Microstrip line matching low noise amplifier |
| CN108052733A (en) * | 2017-12-11 | 2018-05-18 | 湖南时变通讯科技有限公司 | A kind of circuit design method and device |
| CN110231614A (en) * | 2019-07-05 | 2019-09-13 | 电子科技大学 | Microwave ranging system based on passive frequency conversion |
| CN110231614B (en) * | 2019-07-05 | 2024-01-26 | 电子科技大学 | Microwave ranging system based on passive frequency conversion |
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