CN102738357B - 具有微结构透镜的发光二极管 - Google Patents
具有微结构透镜的发光二极管 Download PDFInfo
- Publication number
- CN102738357B CN102738357B CN201110314850.5A CN201110314850A CN102738357B CN 102738357 B CN102738357 B CN 102738357B CN 201110314850 A CN201110314850 A CN 201110314850A CN 102738357 B CN102738357 B CN 102738357B
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- Prior art keywords
- led
- lenticular lens
- led die
- lens
- reflector
- Prior art date
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- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 21
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 235000013351 cheese Nutrition 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/087,564 | 2011-04-15 | ||
US13/087,564 US8969894B2 (en) | 2011-04-15 | 2011-04-15 | Light emitting diode with a micro-structure lens having a ridged surface |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102738357A CN102738357A (zh) | 2012-10-17 |
CN102738357B true CN102738357B (zh) | 2015-11-25 |
Family
ID=46993488
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110314850.5A Active CN102738357B (zh) | 2011-04-15 | 2011-10-17 | 具有微结构透镜的发光二极管 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8969894B2 (zh) |
CN (1) | CN102738357B (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI517452B (zh) * | 2011-03-02 | 2016-01-11 | 建準電機工業股份有限公司 | 發光晶體之多晶封裝結構 |
US9976710B2 (en) | 2013-10-30 | 2018-05-22 | Lilibrand Llc | Flexible strip lighting apparatus and methods |
US9508907B2 (en) * | 2014-09-15 | 2016-11-29 | Koninklijke Philips N.V. | Light emitting device on a mount with a reflective layer |
KR102252994B1 (ko) * | 2014-12-18 | 2021-05-20 | 삼성전자주식회사 | 발광소자 패키지 및 발광소자 패키지용 파장 변환 필름 |
US10132476B2 (en) | 2016-03-08 | 2018-11-20 | Lilibrand Llc | Lighting system with lens assembly |
US20180156423A1 (en) * | 2016-12-06 | 2018-06-07 | Lumenpulse Lighting Inc. | Adjustable wall washing illumination assembly |
US11296057B2 (en) | 2017-01-27 | 2022-04-05 | EcoSense Lighting, Inc. | Lighting systems with high color rendering index and uniform planar illumination |
US20180328552A1 (en) | 2017-03-09 | 2018-11-15 | Lilibrand Llc | Fixtures and lighting accessories for lighting devices |
CN109427948B (zh) * | 2017-08-24 | 2020-07-24 | 嘉兴敏德汽车零部件有限公司 | 高压芯片出光单元 |
JP7278301B2 (ja) * | 2018-04-23 | 2023-05-19 | クリーエルイーディー インコーポレイテッド | パターン形成された表面を有するスーパーストレートを備える半導体発光デバイス |
US11041609B2 (en) | 2018-05-01 | 2021-06-22 | Ecosense Lighting Inc. | Lighting systems and devices with central silicone module |
US11353200B2 (en) | 2018-12-17 | 2022-06-07 | Korrus, Inc. | Strip lighting system for direct input of high voltage driving power |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101026285A (zh) * | 2006-02-21 | 2007-08-29 | 精工爱普生株式会社 | 光电复合基板以及电子设备 |
CN101539266A (zh) * | 2008-03-19 | 2009-09-23 | 富准精密工业(深圳)有限公司 | 发光元件及其透镜 |
CN101783340A (zh) * | 2010-02-02 | 2010-07-21 | 陕西科技大学 | 一种led背光板集成封装结构及封装方法 |
TW201110421A (en) * | 2009-09-04 | 2011-03-16 | Paragon Sc Lighting Tech Co | LED package structure for increasing heat-dissipating effect and light-emitting efficiency and method for making the same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6670207B1 (en) * | 1999-03-15 | 2003-12-30 | Gentex Corporation | Radiation emitter device having an integral micro-groove lens |
US6987613B2 (en) * | 2001-03-30 | 2006-01-17 | Lumileds Lighting U.S., Llc | Forming an optical element on the surface of a light emitting device for improved light extraction |
JP4504662B2 (ja) * | 2003-04-09 | 2010-07-14 | シチズン電子株式会社 | Ledランプ |
TW200522387A (en) * | 2003-12-26 | 2005-07-01 | Ind Tech Res Inst | High-power LED planarization encapsulation structure |
TWI277223B (en) * | 2004-11-03 | 2007-03-21 | Chen-Lun Hsingchen | A low thermal resistance LED package |
KR100580753B1 (ko) * | 2004-12-17 | 2006-05-15 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US7425083B2 (en) * | 2005-05-02 | 2008-09-16 | Samsung Electro-Mechanics Co., Ltd. | Light emitting device package |
KR101161383B1 (ko) | 2005-07-04 | 2012-07-02 | 서울반도체 주식회사 | 발광 다이오드 및 이를 제조하기 위한 방법 |
JP2007258667A (ja) * | 2006-02-21 | 2007-10-04 | Seiko Epson Corp | 光電気複合基板及び電子機器 |
KR100804735B1 (ko) * | 2006-03-23 | 2008-02-19 | 연세대학교 산학협력단 | 프레넬 렌즈 및 이를 이용한 led 조명 장치 |
US7943952B2 (en) * | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
JP5179766B2 (ja) * | 2007-03-08 | 2013-04-10 | スタンレー電気株式会社 | 半導体発光装置およびその製造方法 |
KR20090087701A (ko) * | 2008-02-13 | 2009-08-18 | 연세대학교 산학협력단 | 유기 발광 다이오드의 제조 방법 및 이를 이용한 유기 발광다이오드 |
US8033693B2 (en) * | 2009-04-30 | 2011-10-11 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Lighting structure with multiple reflective surfaces |
TWI361216B (en) * | 2009-09-01 | 2012-04-01 | Ind Tech Res Inst | Phosphors, fabricating method thereof, and light emitting device employing the same |
US8338851B2 (en) * | 2010-03-17 | 2012-12-25 | GEM Weltronics TWN Corporation | Multi-layer LED array engine |
US20110291132A1 (en) * | 2010-05-28 | 2011-12-01 | Fang-Chang Liu | Light-emiting device with improved color rendering index |
-
2011
- 2011-04-15 US US13/087,564 patent/US8969894B2/en active Active
- 2011-10-17 CN CN201110314850.5A patent/CN102738357B/zh active Active
-
2015
- 2015-02-12 US US14/620,481 patent/US9899563B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101026285A (zh) * | 2006-02-21 | 2007-08-29 | 精工爱普生株式会社 | 光电复合基板以及电子设备 |
CN101539266A (zh) * | 2008-03-19 | 2009-09-23 | 富准精密工业(深圳)有限公司 | 发光元件及其透镜 |
TW201110421A (en) * | 2009-09-04 | 2011-03-16 | Paragon Sc Lighting Tech Co | LED package structure for increasing heat-dissipating effect and light-emitting efficiency and method for making the same |
CN101783340A (zh) * | 2010-02-02 | 2010-07-21 | 陕西科技大学 | 一种led背光板集成封装结构及封装方法 |
Also Published As
Publication number | Publication date |
---|---|
US9899563B2 (en) | 2018-02-20 |
US20120261690A1 (en) | 2012-10-18 |
CN102738357A (zh) | 2012-10-17 |
US20150162490A1 (en) | 2015-06-11 |
US8969894B2 (en) | 2015-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20150918 Address after: Hsinchu, Taiwan, China Applicant after: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. Address before: Hsinchu, Taiwan, China Applicant before: Taiwan Semiconductor Manufacturing Co., Ltd. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160120 Address after: Taiwan, China Hsinchu Science Park Road, No. five, No. 5 Patentee after: Jingyuan Optoelectronics Co., Ltd. Address before: Hsinchu, Taiwan, China Patentee before: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |