CN102725435B - 磁场产生装置、磁控管阴极及溅射装置 - Google Patents

磁场产生装置、磁控管阴极及溅射装置 Download PDF

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Publication number
CN102725435B
CN102725435B CN201180004548.8A CN201180004548A CN102725435B CN 102725435 B CN102725435 B CN 102725435B CN 201180004548 A CN201180004548 A CN 201180004548A CN 102725435 B CN102725435 B CN 102725435B
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China
Prior art keywords
magnet
magnetic field
target
magnetic
field distribution
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CN201180004548.8A
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English (en)
Chinese (zh)
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CN102725435A (zh
Inventor
孔为
林子敬
李明
谢斌
王海千
姜友松
长江亦周
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Science and Technology of China USTC
Shincron Co Ltd
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University of Science and Technology of China USTC
Shincron Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
    • C03C17/23—Oxides
    • C03C17/245—Oxides by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/06—Electromagnets; Actuators including electromagnets
    • H01F7/08—Electromagnets; Actuators including electromagnets with armatures
    • H01F7/081—Magnetic constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3461—Means for shaping the magnetic field, e.g. magnetic shunts

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Electromagnetism (AREA)
  • Power Engineering (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physical Vapour Deposition (AREA)
CN201180004548.8A 2010-09-13 2011-08-30 磁场产生装置、磁控管阴极及溅射装置 Active CN102725435B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPPCT/JP2010/065749 2010-09-13
PCT/JP2010/065749 WO2012035603A1 (fr) 2010-09-13 2010-09-13 Dispositif de production de champ magnétique, cathode de magnétron, et dispositif de pulvérisation cathodique
PCT/JP2011/069597 WO2012035970A1 (fr) 2010-09-13 2011-08-30 Générateur de champs magnétiques, cathode de magnétron, et dispositif de sublimation

Publications (2)

Publication Number Publication Date
CN102725435A CN102725435A (zh) 2012-10-10
CN102725435B true CN102725435B (zh) 2014-02-26

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CN201180004548.8A Active CN102725435B (zh) 2010-09-13 2011-08-30 磁场产生装置、磁控管阴极及溅射装置

Country Status (8)

Country Link
US (1) US10000844B2 (fr)
EP (1) EP2617863A4 (fr)
JP (1) JPWO2012035603A1 (fr)
KR (1) KR20120093824A (fr)
CN (1) CN102725435B (fr)
HK (1) HK1172376A1 (fr)
TW (1) TWI409353B (fr)
WO (2) WO2012035603A1 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160133445A9 (en) * 2011-11-04 2016-05-12 Intevac, Inc. Sputtering system and method for highly magnetic materials
CN104651786B (zh) * 2013-11-18 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管的磁场强度的调节方法
WO2015076162A1 (fr) * 2013-11-22 2015-05-28 東レ株式会社 Électrode de plasma, électrode de traitement au plasma, électrode de cvd, dispositif de cvd au plasma et procédé de fabrication d'un substrat à film mince
DE102014110381A1 (de) * 2014-07-23 2016-01-28 Von Ardenne Gmbh Magnetron-Anordnung, Beschichtungsanordnung und Verfahren zum Anpassen einer Magnetfeldcharakteristik einer Magnetron-Anordnung
CN105734516B (zh) * 2016-05-04 2018-01-26 京东方科技集团股份有限公司 一种磁控溅射用的靶背板及磁控溅射装置
CN109312450B (zh) * 2016-06-21 2021-01-12 株式会社爱发科 靶材装置、溅射装置
US10151023B2 (en) 2016-06-27 2018-12-11 Cardinal Cg Company Laterally adjustable return path magnet assembly and methods
US10056238B2 (en) 2016-06-27 2018-08-21 Cardinal Cg Company Adjustable return path magnet assembly and methods
JP6938037B2 (ja) * 2016-11-30 2021-09-22 国立研究開発法人産業技術総合研究所 マグネトロンスパッタリング装置、及び、磁場形成装置
WO2018175689A1 (fr) * 2017-03-22 2018-09-27 Applied Plasma Equipment Source de pulvérisation magnétron pour matériaux cibles isolants
US10790127B2 (en) 2017-05-04 2020-09-29 Cardinal Cg Company Flexible adjustable return path magnet assembly and methods
CN109295430B (zh) * 2017-07-25 2022-07-12 索莱尔有限责任公司 用于调节管状磁控管的磁体系统的旋转角度的装置和方法
CN110714186A (zh) * 2018-07-11 2020-01-21 君泰创新（北京）科技有限公司 一种阴极体组件、磁控溅射阴极及磁控溅射装置
CN108559964A (zh) * 2018-07-25 2018-09-21 衡阳舜达精工科技有限公司 一种磁控溅射阴极磁场布置结构及用于制备纳米碳薄膜的方法
CN114574830B (zh) * 2022-03-11 2024-03-26 陕西理工大学 用于磁控溅射靶阴极的磁铁布置结构

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US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
CN101418433A (zh) * 2008-10-17 2009-04-29 湖南玉丰真空科学技术有限公司 一种可提高靶材利用率的平面磁控溅射阴极
CN101445915A (zh) * 2007-11-30 2009-06-03 松下电器产业株式会社 溅射装置以及溅射方法

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JP2537210B2 (ja) * 1986-09-18 1996-09-25 株式会社東芝 高密度プラズマの発生装置
US4964968A (en) * 1988-04-30 1990-10-23 Mitsubishi Kasei Corp. Magnetron sputtering apparatus
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
US6080287A (en) 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6258217B1 (en) * 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
AU1478601A (en) 1999-11-18 2001-05-30 Tokyo Electron Limited High target utilization magnetic arrangement for a truncated conical sputtering target
EP1637624B1 (fr) 2003-06-02 2012-05-30 Shincron Co., Ltd. Dispositif de formation de couches minces
JP2005008917A (ja) * 2003-06-17 2005-01-13 Nitto Denko Corp マグネトロンスパッタ装置用カソード
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US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
CN101445915A (zh) * 2007-11-30 2009-06-03 松下电器产业株式会社 溅射装置以及溅射方法
CN101418433A (zh) * 2008-10-17 2009-04-29 湖南玉丰真空科学技术有限公司 一种可提高靶材利用率的平面磁控溅射阴极

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Also Published As

Publication number Publication date
US10000844B2 (en) 2018-06-19
EP2617863A4 (fr) 2014-11-19
KR20120093824A (ko) 2012-08-23
TWI409353B (zh) 2013-09-21
TW201229284A (en) 2012-07-16
JPWO2012035603A1 (ja) 2014-01-20
WO2012035970A1 (fr) 2012-03-22
CN102725435A (zh) 2012-10-10
WO2012035603A1 (fr) 2012-03-22
US20130180851A1 (en) 2013-07-18
EP2617863A1 (fr) 2013-07-24
HK1172376A1 (en) 2013-04-19

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