CN102714253A - Epitaxy wrap-through solar cells having longitudinally shaped perforations and method for the production thereof - Google Patents
Epitaxy wrap-through solar cells having longitudinally shaped perforations and method for the production thereof Download PDFInfo
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
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Abstract
The invention relates to a thin film solar cell, in particular an epitaxy wrap-through (EpiWT) solar cell, having at least one through-hole, wherein the ratio of the circumference of the contour of the at least one through-hole to the surface area enclosed by the contour of the through-hole is greater than the ratio of the circumference to the surface area of a circle having the same surface area.
Description
Technical field
The present invention relates to a kind of thin-film solar cells; Be particularly related to extension perforation takeup type (EpiWT) solar cell; This solar cell has at least one through hole, the girth of the profile of this at least one through hole with by the ratio of the area that profile surrounded of this through hole ratio greater than girth with circle of the same area and area.
Background technology
Extension perforation takeup type (EpiWT) solar cell is to have the crystal silicon thin film solar cell of back side contact site (referring to E.J.Mitchell and S.Reber; Proceedings 33rd IEEE Photovoltaic Specialists Conference (the 33rd meeting of Institute of Electrical and Electric Engineers photovoltaic specialists meeting) (2008), the 510th page).Thus; The EpiWT solar cell is with the advantage (for example through reducing the cost that the consumption of high-purity silicon material has been reduced every watt of peak value) of thin-film solar cells and the advantages of back contact solar cells; The advantage of this back contact solar cells has: do not have the shade that is caused by the front grid; Emitter can be optimized with regard to its blue response aspect, and contact site can be optimized just low series resistance aspect, and the module wiring is simpler; And the packing density in the module is higher (referring to E.van Kerschaver and G.Beaucarne; Progress in Photovoltaics:Research and Applications (research of photovoltage progress and application) 14 (2), (2006), the 107th page).The effective layer of solar cell turned over through the hole that utilizes laser and in substrate, punch to be placed on the backside of substrate, thereby realizes back side contact site (referring to Fig. 1).Fraunhofer-Institut f ü r Solare Energiesysteme (ISE) has applied for patent (E.J.Mitchell for the design of EpiWT solar cell; S.Reber; E.Schmich; " Thin-film solar cell and process for its manufacture (thin-film solar cells and manufacturing approach thereof) ", EP 2 071 632A1 (2009)).About the basic structure of this type solar cell, can be referring to this paper.
Fraunhofer ISE has illustrated the operation of EpiWT battery design in feasibility study.The efficient that current EpiWT solar cell is realized is no more than 10.3% (the Proceedings 24thEuropean Photovoltaic Specialists Conference (the 24th meeting of European photovoltaic specialists meeting) (2009) referring to people such as E.J.Mitchell prints).Thus; The efficient of EpiWT solar cell still is starkly lower than the efficient of the current ESF epitaxial silicon film solar cell with front and back contact site; It has and reaches 14.2% mc-silicon base efficient (referring to S.Schmich physics Master's thesis, Konstanz university (2008)).Yet, because the EpiWT solar cell is owing to there being positive contact grid not have bigger optical coupling, so the theoretical efficiency of EpiWT solar cell even be higher than the efficient of the comparable crystal silicon thin film solar cell with front and back contact site.Therefore, need further optimize the EpiWT solar cell aspect the battery structure of EpiWT solar cell and this cell manufacturing method.
Compare with traditional solar cell, the EpiWT solar cell has two extra notional series resistances, and its efficient reduces because of said resistance.These resistance are spreading resistance and hole resistance (referring to N.Brinkmann, Master's thesis, Konstanz university (2009)).
Electric current in the conventional solar cell flows to contact concurrently in emitter, and the electric current in the EpiWT solar cell radially flows to hole (referring to Fig. 2), flows to the contact site on the cell backside through the emitter layer in this hole then.As a result, in bore region, cause carrier density to raise, cause so-called " current-crowding effect ".Compare with conventional solar cell, " current-crowding effect " phenomenon causes the emitter series resistance of EpiWT solar cell to raise.The front emitter series resistance of this rising of EpiWT solar cell is also referred to as spreading resistance.Hole resistance is meant the resistance that said electronics receives when electronics flows to the contact site on the cell backside through the emitter in the hole.
These two extra series resistances have improved total series resistance of EpiWT solar cell, and therefore packing factor and the efficient to solar cell has a negative impact.A kind of possibility method that reduces these extra resistance is to improve the quantity in hole and/or increase the diameter (referring to N.Brinkmann, ibid) in hole.Yet this two aspect causes effective cell area to reduce.Owing to reduce effective cell area, cause reducing photoelectric current, and the efficient (referring to N.Brinkmann, ibid) of this meeting negative effect EpiWT solar cell.Thus, definite resistance always of the best pore structure of EpiWT solar cell and the compromise between the photoelectric current loss.
Summary of the invention
Therefore, the objective of the invention is to, based on the solar cell of describing among the EP 2 071 632; A kind of improved solar cell is provided; Through this improved solar cell, can avoid above-mentioned current-crowding effect phenomenon to a great extent, and make hole resistance reduce and the efficient raising.
About the thin-film solar cells aspect, realize this purpose with the characteristic of claim 1, and, realize this purpose with method according to claim 10 being used to make according to aspect the method for solar cell of the present invention.At this, the favourable expansion of each dependent claims representative.
Therefore, according to the present invention, the thin-film solar cells that has the back side and be used for the front of light entering is provided, this thin-film solar cells comprises with lower component at least:
A) have the non-photoelectricity or the non-photosensitivity substrate of at least one through hole that connects positive and the back side;
B) at least one photosensitive base layer and at least one emitter layer, they be deposited on the positive surface of at least partly or entirely going up and being deposited on said at least one through hole partly or entirely on, in through hole, form passage thus,
C) at least one emitter contact site and at least one base stage contact site place on the back side their mutually insulateds.
About the basic structure of thin-film solar cells, can refer again to EP 2 071 632A1, for this reason, the execution mode of EP 2 071 632A1 comprises in this application.At this, the base layer of preferably in substrate, growing, and emitter layer is represented the superiors of base layer, and for example doping method manufacturing of universal method that can be known by one of skill in the art.
At this, the passage that comprises in the solar cell is represented cavity, and this passage connects the front and back of thin-film solar cells.At this, this passage is constructed such that: photosensitive base layer and emitter layer are grown on the part at least on surface of respective openings or through hole of substrate of thin-film solar cells.The through hole of substrate for example can produce through laser drilling; Yet also can produce through mechanical punching technology; Perhaps can when making substrate, just introduce; Can carry out through sedimentation well known in the prior art and go up the corresponding photosensitive layer of growth, can make corresponding passage thus on the surface (surface that comprises through hole) of substrate.Photosensitive layer, i.e. base layer and emitter layer can be deposited on the whole surface of through hole or only on the part on this surface, make the passage that produces relative configurations.Thereby grow these two layers, the through hole incomplete obstruction that makes substrate promptly, in this through hole, keep making cavity positive and back side interconnection, and the passage that is produced thus is tubular.According to the present invention, resulting or remaining cavity is called as passage.
Now; Propose according to design of the present invention: the profile in the substrate on each side included passage, that be set at solar cell; Be opening, be designed so that: the girth of the profile of said at least one passage with by the ratio of the area that profile surrounded of this passage ratio greater than girth with circle of the same area and area.The area of passage, the area that promptly is formed on the hole of on the front or the back side and the arrival end expression passage and the port of export limits through the edge that is made up of at the extension emitter.The profile of passage is confirmed by this edge.According to the present invention, the girth of this profile is greater than the girth that has with the above-mentioned qualification area circle of the same area of the inlet of passage or outlet (promptly on the front of substrate or the back side, keeping open zone through passage).In this respect, can find out that the front of substrate or the profile of the passage on the back side have and circular different profiles.
Surprisedly find, utilize bottom this in passage or hole, can realize obviously reducing notional extra series resistance, and obviously improve the efficient of solar cell thus through improved shape.
Can realize being different from circular channel shape through following manner:
A) in substrate, be pre-formed through hole, this through hole has the profile that is different from circle.The surface of this through hole is uniformly, promptly is provided with corresponding photosensitive layer with identical bed thickness, and promptly base layer and emitter layer make photosensitive layer adapt to the basic configuration of the predetermined through-holes of substrate.Thus, the passage that so forms has the basic configuration of the through hole of substrate.For example, can in substrate, insert ellipse hole etc. in advance, and like the said deposition photosensitive layer of preamble.
B) in substrate, form manhole, yet, on the surface of this through hole, deposit said layer, the feasible structure that for example can realize ellipse or rectangle asymmetricly.For this process; On some positions of passage,, make the passage that utilizes this method to produce have the profile that is different from circle, is different from predetermined manhole equally than on other positions, running through deposition more corresponding photosensitive layer (being base layer and emitter layer) material.
C) yet; Similarly; Also can imagine the mixing shape of processing by two kinds of preceding methods, for example be shaped by further through the asymmetric deposition of each photosensitive layer asymmetricly, promptly produce the channel shape that further departs from circular configuration through the non-circular through hole that will utilize asymmetric punching process to form.
For example, the preferred implementation of the profile of passage for example proposes: passage can have ellipse, rectangle, spill, convex periphery or profile, perhaps has rectangular perimeter and/or its combination of fillet.At this, particularly preferably be the oval of through hole or have the profile of the rectangle of fillet.
Through using the passage of strip, promptly oval pore makes spreading resistance and hole resistance to reduce greatly, and improves the efficient of EpiWT solar cell thus until slit (referring to the Fig. 3 about the profile aspect).This does not depend on that the profile in passage or slit is formed (referring to Fig. 3) fillet or the band angle.The spill of passage or convex shape, for example oval pore or slit also are fine.
Use the advantage in oval pore or slit to be to have bigger hole girth.Through bigger hole girth, reduced the carrier density of bore edges on the one hand, the spreading resistance that is therefore caused by current-crowding effect reduces greatly, or complete obiteration under the situation of using the slit.On the other hand, descend along with the increase of hole girth with the complementary hole of hole girth resistance.
Another advantage in slit is that it is formed in substrate or the wafer more easily, for example forms through the chip saw.Thus, the EpiWT solar cell that has the slit is than the generation more easily in industry of the solar cell with circular port.
Another advantage of gap structure is that the structureization of battery is simpler, and reason is, for example when applying each layer and/or contact site, the adjustment of the structure essence that becomes is easier, and this is because only need on a dimension, adjust.
The series resistance of EpiWT solar cell obviously reduces owing to the metal in the slit once more.Also can realize the contact fully of emitter layer in this slit through the slit, making no longer needs emitter on the back side of battery.
A favourable execution mode of the present invention proposes; The front and back of substrate extends basically in parallel to each other; And said at least one channel parallel extends through substrate in said normal, promptly extends with 90 ° angle basically with respect to the surface at the front or the back side.Thus, through-hole passage has the shortest as far as possible being connected between front and the back side, can further reduce resistance thus.
This passage that extends with 90 ° angle with respect to substrate surface can produce through following manner:
A) produce through hole perpendicular to substrate surface, realize photosensitive layer then, be the uniform deposition of base layer and emitter layer, make the uniform layer thickness of on the whole length of through hole, realizing photosensitive layer.Therefore, consequent passage all has uniform base layer and emitter layer bed thickness anywhere on the direction of through hole, makes that resulting passage is same as through hole, to become 90 ° of extensions with substrate surface.Structuring about being different from circular passage profile can realize through above-mentioned design.
B) through the passage of diagonally extending substrate is bored a hole, wherein, each photosensitive layer, promptly base layer and emitter layer are deposited in the through hole obliquely, make passage become 90 ° of extensions generally with substrate surface.Such mode only can be used for until following angle, and promptly for this angle, on the projecting direction of substrate surface, the arrival end of through hole and the port of export still self are arranged.Therefore, such method seriously depends on the thickness of through hole.At this, also be implemented in the structure that the profile aspect is different from round-shaped passage with preceding method.
Exist under the situation of a plurality of passages, except that above-mentioned modification, also can realize for selecting execution mode to propose: at least one passage passes photosensitive substrate obliquely and extends, and the preferred angle extension that becomes 45 °≤α≤85 ° with front and back.Particularly advantageously for this type execution mode be, compare with not channelled solar cell that photosensitive surface long-pending maintenance basically equates, reason is that the wall self of passage also has the photosensitive base layer and the emitter layer of growth above that.Through the passage of diagonally extending, thereby the light of injecting inevitably, the light of for example injecting perpendicular to the front of solar cell is also in the admission passage and arrive on the photosensitive layer that is arranged in passage of solar cell.In fact, here than higher slightly in the aforementioned embodiments, still, this can be compensated through following manner series resistance owing to the channel arrangement that stretches, and promptly the surface of passage self also is used to produce electric energy at least in part, and has avoided light loss thus.
Can produce the passage of aforesaid diagonally extending through following manner:
A) through hole of diagonally extending is set in the substrate of solar cell, for the surface of this through hole evenly is provided with base layer and emitter layer.Realize and round-shaped different structure with preceding method about profile.At this, consequent passage extends through this substrate obliquely.
B) through hole that extends perpendicular to the surface is set in substrate.On the direction of through-hole passage; On the surface of through hole base layer and emitter layer are set in the following manner: promptly asymmetricly; Grow these base layers and emitter layer make that the side at this through hole for example increases bed thickness on channel direction, and reduce bed thickness at opposite side.Therefore, the passage that so obtains preferably has identical cross-sectional area on channel direction, but this passage extends through photosensitive layer, and this photosensitive layer advantageously tilts to apply through this substrate with the change curve of gradient.A kind of execution mode for example is shown in Fig. 4.
Can similarly propose, base layer becomes inclined-plane (referring to Fig. 4) in a side of passage towards this passage at least with emitter layer.This particularly advantageous execution mode also makes it possible to further improve light incident and total photosensitive surface of optimum utilization solar cell thus.
At this, the contact of thin-film solar cells is implemented on the back side fully.At this, can propose in one embodiment, the back side of solar cell does not have photosensitive layer, i.e. base layer and emitter layer.At this,, can realize the contact of emitter through the emitter contact site being introduced from the bottom side the passage until certain-length.At this, also can realize the base stage contact from the back side.
Also can said at least one photosensitive base layer and at least one emitter layer be deposited on the part at the back side for selecting mode as a kind of, wherein, said layer is connected with the equivalent layer in being deposited on passage is whole at this.In other words, this expression, said base layer and emitter layer exceed passage and extend on the back side, so realize that on rear surface of solar cell these base layers, emitter layer contact with corresponding contact portion.
Further advantageously, between at least one emitter contact site and/or at least one base stage contact site and substrate, introduce at least one insulating barrier.Propose through this execution mode, the photosensitive base layer or the emitter layer that extend through through hole are separated the utmost point (Gegenpol) (being substrate and the contact zone that is connected with substrate) with the electricity of solar cell effectively.At this, preferably, the insulating barrier between the emitter is the n type, and the insulating barrier between substrate or the base is the p type.
Another preferred implementation of thin-film solar cells unit proposes, and at least one passivation layer is placed on the front of thin-film solar cells, and this passivation layer preferably is built into antireflecting, constitute by dielectric substance, and especially preferably by being selected from SiO
2, SiC, SiN and a plurality of layers dielectric substance constitute, and be built into the multilayer that constitutes by it.
The preferred base material that can be used for thin-film solar cells is selected from this:
Electric conducting material, the silicon that particularly mixes, perhaps
Coat the electrical insulator of the coating that forms by electric conducting material.
The preferred material that can be used for photosensitive base layer is semiconductor at this.Preferred semiconductor can be selected from any in following group: IV family semiconductor, III/V family semiconductor, II/VI family semiconductor, particularly Si, GaAs and CdTe.
According to the present invention, the similar method that is provided for making aforementioned thin-film solar cells, wherein implement following method step at least:
A) at least one through hole is set in the non-photosensitivity substrate,
B) deposit at least one photosensitive base layer and at least one emitter layer on the part in front and on the surface of through hole at least, and in through hole, forming passage, and
C) at least one emitter contact zone and at least one basic contact zone of formation electrically insulated from one another on the back side of substrate and/or in passage,
Wherein, passage is constructed such that: the girth of the profile of at least one passage with by the ratio of the area that profile surrounded of this passage ratio greater than girth with circle of the same area and area.
At this, realize the structure of passage with the method step that in preamble, has specified.
The advantageous method possibility of in substrate, introducing through hole is laser beam perforation method or laser milling method at this, yet, equally also can use mechanical means, for example utilize the chip saw.
According to the abovementioned steps of the inventive method a) and/or b), can go up overleaf further respectively that depositing insulating layer is used for the mutually insulated of two contact zones and/or deposit passivation layer on the front.
Embodiment
According to accompanying drawing the present invention is described in further detail below, but does not really want to limit the invention to execution mode as herein described.
Fig. 1 is the schematic sectional view that the part of extension perforation takeup type solar cell is shown, and this solar cell comprises non-photovoltaic substrate 1, this substrate have a plurality of from the front to the back side vertically extending through hole.In substrate, the photosensitive base layer 3 of extension ground growth on whole front.This base layer 3 is coated with emitter layer 4 fully.The coating of substrate 1, promptly epitaxially grown base layer 3 and emitter layer 4 also are grown on the surface of this through hole of substrate 1, and promptly the whole surface of through hole is applied by base layer 3 and emitter layer 4 equally, forms passage 2 thus.Thus, extension emitter layer 4 forms the surface of passage 2.Like needs, the part at substrate 1 back side also can be equipped with base layer 3 or emitter layer 4.Now, the back side of solar cell has two contact sites, contact site 5 contact emitters (emitter contact zone), and these contact sites are the n-contact site.Preferably, these contact sites are formed by aluminium.Another contact site 6 (p-contact site) is connected with non-photosensitivity substrate 1, and expression substrate contact zone 6.Known by prior art, the bottom surface of passage 2 (according to Fig. 1, its face for from the top, promptly seeing on the light incident direction) forms circle, and this causes this type solar cell to have above-mentioned shortcoming.According to the present invention, this bottom surface is designed such that now: the profile of through hole has the shape that is different from circle, and with regard to the area of perforation, has the perforation profile of increase thus.Realize the lower series resistance of this type solar cell thus.
According to EP 2 071 632, the circular perimeter of the passage of describing about the execution mode of Fig. 1 before Fig. 2 illustrates 2, this periphery is on the front of solar cell.At this, arrow is illustrated in the electric current of assembling on the surface of solar cell that flows to passage 2, and said electric current makes to cause current-crowding effect in that to be close to this passage place very strong.
Fig. 3 has described the preferred geometries of passage used according to the invention 2, and these geometries are used to replace the profile of passage shown in Fig. 2.Especially, can use ellipse (a), spill (b), convex (c), have the rectangle (d) of fillet and the passage profile of rectangle (e) at this, be the most preferred according to (a) among Fig. 3 and (b) illustrated embodiment among Fig. 3 wherein.
Shown in Fig. 4 in middle production stage the optical microscopic image of extension perforation takeup type solar cell, wherein, Fig. 4 a illustrates total view, and Fig. 4 b illustrates the enlarged drawing of subregion, according to it decision design that inclination raceway groove extends can be described in further detail.At this, the angle of illustrated solar cell is corresponding to the angle shown in Fig. 1.Equally also partly use the reference marker among Fig. 1.Extension perforation takeup type solar cell in the middle of being illustrated in the production stage, wherein, passage 2 extends through substrate 1 obliquely.Can see obviously that the perforation of substrate 1 becomes 90 ° of ground to extend with the surface.Owing to the inclination or the asymmetric elongation growth of base layer 3 and emitter layer 4, obtain the passage 2 of corresponding diagonally extending, although the perforation of substrate is extended perpendicular to the surface.In addition; At the edge of passage 2 (it is illustrated as the right in the drawings), this solar cell has the part through cutting, further increases the light incident in the admission passage thus; Therefore; In the wall of passage 2, can in base layer and emitter layer, produce photosensitive process equally, make and can in passage 2 self, produce electric current.Thus, basically full remuneration for the known shadow loss of front contact solar cell.
Claims (13)
1. a thin-film solar cells has the front that is used for light incident, and the back side, and this thin-film solar cells comprises:
A) have the non-photosensitivity substrate (1) of at least one through hole that connects the said front and the said back side,
B) at least one photosensitive base layer (3) and at least one emitter layer (4); This photosensitive base layer and emitter layer are deposited on the part in said front at least or all go up and on the part or all surfaces of said at least one through hole; In through hole, form passage (2) thus
C) be arranged at least one emitter contact site (5) and at least one base stage contact site (6) on the said back side electrically insulated from one another,
It is characterized in that, the girth of the profile of said at least one passage (2) with by the ratio of the area that profile surrounded of this passage (2) ratio greater than girth with circle of the same area and area.
2. according to the described thin-film solar cells of last claim, it is characterized in that said at least one passage (2) has ellipse, rectangle, spill, convex periphery or has rectangular perimeter and/or its combination of fillet.
3. according to each described thin-film solar cells in the aforementioned claim; It is characterized in that; The front and back of said substrate (1) is parallel to each other, and said at least one passage (2) extends perpendicular to front and back, and/or becomes the angle of 45 °≤α≤85 ° to extend with front and back.
4. according to each described thin-film solar cells in the aforementioned claim, it is characterized in that base layer and emitter layer (4) form the inclined-plane towards said through hole (2) at least on a side of passage (2).
5. according to each described thin-film solar cells in the aforementioned claim; It is characterized in that; Said at least one photosensitive base layer (3) and said at least one emitter layer (4) are deposited on the part at the said back side, and said base layer and emitter layer be deposited at least one passage (2) in whole connection of corresponding layer.
6. according to each described thin-film solar cells in the aforementioned claim, it is characterized in that, between said at least one emitter contact site (5) and/or said at least one base stage contact site (6) and substrate (1), insert at least one insulating barrier.
7. according to each described thin-film solar cells in the aforementioned claim; It is characterized in that, on the thin-film solar cells front, apply at least one passivation layer, this passivation layer preferably has the antireflection structure; And form, and especially preferably by being selected from by SiO by dielectric substance
2, SiC, SiN and a plurality of layers of formation thereof the dielectric substance of group form.
8. according to each described thin-film solar cells in the aforementioned claim, it is characterized in that, said substrate (1) by following a) or b) form:
A) electric conducting material, the silicon that particularly mixes, perhaps
B) has the electrical insulator of the coating that forms by electric conducting material.
9. according to each described thin-film solar cells in the aforementioned claim; It is characterized in that; At least one photosensitive base layer (3) is made up of semiconductor, preferably by be selected from by IV family semiconductor, III/V family semiconductor, II/VI family semiconductor particularly the semiconductor of the group that constitutes of Si, GaAs and CdTe form.
10. one kind is used for making the method according to aforementioned each described thin-film solar cells of claim, comprising:
A) in non-photosensitivity substrate (1), form at least one through hole and draw,
B) at least one photosensitive base layer (3) of deposition and at least one emitter layer (4) on the surface of the part in front and through hole at least, and in said through hole, form passage (2), and
C) at least one the emitter contact zone (5) and at least one the basic contact zone (6) that form electrically insulated from one another on the back side of substrate (1) and/or in passage (2),
It is characterized in that said passage (2) is constructed such that: the girth of the profile of said at least one passage with by the ratio of the area that profile surrounded of this passage ratio greater than girth with circle of the same area and area.
11. according to the described method of last claim, it is characterized in that, by means of laser or mechanically in substrate (1), form passage (2).
12. according to each described method in preceding two claims, it is characterized in that, after step a) and/or step b), at least one insulating barrier of deposition on the back side of substrate (1).
13., it is characterized in that, at step a), b according to each described method in the claim 10 to 12) and/or c) after, deposit passivation layer on the front.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009057984.2 | 2009-12-11 | ||
| DE102009057984A DE102009057984A1 (en) | 2009-12-11 | 2009-12-11 | Epitaxial wrap-through solar cells with elongated hole shapes and methods for their production |
| PCT/EP2010/007161 WO2011069605A2 (en) | 2009-12-11 | 2010-11-25 | Epitaxy wrap-through solar cells having longitudinally shaped perforations and method for the production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102714253A true CN102714253A (en) | 2012-10-03 |
Family
ID=43992838
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800563815A Pending CN102714253A (en) | 2009-12-11 | 2010-11-25 | Epitaxy wrap-through solar cells having longitudinally shaped perforations and method for the production thereof |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP2510548A2 (en) |
| CN (1) | CN102714253A (en) |
| DE (1) | DE102009057984A1 (en) |
| WO (1) | WO2011069605A2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102019006097A1 (en) * | 2019-08-29 | 2021-03-04 | Azur Space Solar Power Gmbh | Passivation process for a through hole in a semiconductor wafer |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003072500A1 (en) * | 2002-02-26 | 2003-09-04 | Sharp Kabushiki Kaisha | Plate-shaped silicon manufacturing method, substrate for manufacturing plate-shaped silicon, plate-shaped silicon, solar cell using the plate-shaped silicon, and solar cell module |
| CN101443921A (en) * | 2006-03-10 | 2009-05-27 | 纳米太阳能公司 | High-efficiency solar cell with insulated vias |
| WO2009077103A1 (en) * | 2007-12-14 | 2009-06-25 | FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER FÖRDERUNG DER ANGEWANDTEN FORSCHUNG e.V. | Thin-film solar cell and process for its manufacture |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102006027737A1 (en) * | 2006-06-10 | 2007-12-20 | Hahn-Meitner-Institut Berlin Gmbh | Unilaterally contacted solar cell with plated-through holes and method of manufacture |
-
2009
- 2009-12-11 DE DE102009057984A patent/DE102009057984A1/en not_active Ceased
-
2010
- 2010-11-25 CN CN2010800563815A patent/CN102714253A/en active Pending
- 2010-11-25 WO PCT/EP2010/007161 patent/WO2011069605A2/en active Application Filing
- 2010-11-25 EP EP10784986A patent/EP2510548A2/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003072500A1 (en) * | 2002-02-26 | 2003-09-04 | Sharp Kabushiki Kaisha | Plate-shaped silicon manufacturing method, substrate for manufacturing plate-shaped silicon, plate-shaped silicon, solar cell using the plate-shaped silicon, and solar cell module |
| CN101443921A (en) * | 2006-03-10 | 2009-05-27 | 纳米太阳能公司 | High-efficiency solar cell with insulated vias |
| WO2009077103A1 (en) * | 2007-12-14 | 2009-06-25 | FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER FÖRDERUNG DER ANGEWANDTEN FORSCHUNG e.V. | Thin-film solar cell and process for its manufacture |
Non-Patent Citations (1)
| Title |
|---|
| N. BRINKMANN ET AL: "Epitaxy-through-holes process for epitaxy warp-through solar cells", 《PRESENTED AT THE 24TH EUROPEAN PV SOLAR ENERGY CONFERENCE AND EXHIBITION》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011069605A2 (en) | 2011-06-16 |
| DE102009057984A1 (en) | 2011-06-16 |
| WO2011069605A3 (en) | 2011-10-13 |
| EP2510548A2 (en) | 2012-10-17 |
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Application publication date: 20121003 |