CN102709406A - 一种具备可裂解性铜衬底发光二极管的制备方法 - Google Patents
一种具备可裂解性铜衬底发光二极管的制备方法 Download PDFInfo
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CN113421839A (zh) * | 2015-12-23 | 2021-09-21 | 歌尔股份有限公司 | 微发光二极管转移方法及制造方法 |
Citations (5)
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US20040235210A1 (en) * | 2003-05-22 | 2004-11-25 | Matsushita Electric Industrial Co. Ltd. | Method for fabricating semiconductor devices |
CN1564331A (zh) * | 2004-04-05 | 2005-01-12 | 清华大学 | 一种GaN基发光二极管的制作方法 |
CN101132040A (zh) * | 2006-08-23 | 2008-02-27 | 三星电机株式会社 | 垂直的氮化镓基发光二极管及其制造方法 |
CN101241964A (zh) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | 一种应用合成分隔法激光剥离GaN基发光器件及其制造方法 |
CN101974772A (zh) * | 2010-08-11 | 2011-02-16 | 中国科学院半导体研究所 | 氮化镓基垂直结构发光二极管转移衬底的二次电镀方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US20040235210A1 (en) * | 2003-05-22 | 2004-11-25 | Matsushita Electric Industrial Co. Ltd. | Method for fabricating semiconductor devices |
CN1564331A (zh) * | 2004-04-05 | 2005-01-12 | 清华大学 | 一种GaN基发光二极管的制作方法 |
CN101132040A (zh) * | 2006-08-23 | 2008-02-27 | 三星电机株式会社 | 垂直的氮化镓基发光二极管及其制造方法 |
CN101241964A (zh) * | 2007-12-24 | 2008-08-13 | 厦门三安电子有限公司 | 一种应用合成分隔法激光剥离GaN基发光器件及其制造方法 |
CN101974772A (zh) * | 2010-08-11 | 2011-02-16 | 中国科学院半导体研究所 | 氮化镓基垂直结构发光二极管转移衬底的二次电镀方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113421839A (zh) * | 2015-12-23 | 2021-09-21 | 歌尔股份有限公司 | 微发光二极管转移方法及制造方法 |
CN113421839B (zh) * | 2015-12-23 | 2022-03-18 | 歌尔股份有限公司 | 微发光二极管转移方法及制造方法 |
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Application publication date: 20121003 Assignee: Nantong Tongfang Semiconductor Co.,Ltd. Assignor: Tongfang Opto-electronic Co., Ltd. Contract record no.: 2015990000187 Denomination of invention: Manufacturing method for copper substrate light emitting diode (LED) with cleavability Granted publication date: 20140416 License type: Exclusive License Record date: 20150413 |
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