CN102693997A - 固体摄像装置、其制造方法以及电子装置 - Google Patents

固体摄像装置、其制造方法以及电子装置 Download PDF

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Publication number
CN102693997A
CN102693997A CN2012100686619A CN201210068661A CN102693997A CN 102693997 A CN102693997 A CN 102693997A CN 2012100686619 A CN2012100686619 A CN 2012100686619A CN 201210068661 A CN201210068661 A CN 201210068661A CN 102693997 A CN102693997 A CN 102693997A
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China
Prior art keywords
lens
lenticule
camera head
colour filter
solid camera
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Pending
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CN2012100686619A
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English (en)
Chinese (zh)
Inventor
东宫祥哲
大塚洋一
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Sony Corp
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Sony Corp
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Publication of CN102693997A publication Critical patent/CN102693997A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

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  • Solid State Image Pick-Up Elements (AREA)
CN2012100686619A 2011-03-23 2012-03-15 固体摄像装置、其制造方法以及电子装置 Pending CN102693997A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011064301A JP2012204354A (ja) 2011-03-23 2011-03-23 固体撮像装置、固体撮像装置の製造方法及び電子機器
JP2011-064301 2011-03-23

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Publication Number Publication Date
CN102693997A true CN102693997A (zh) 2012-09-26

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US (2) US8743265B2 (enExample)
JP (1) JP2012204354A (enExample)
CN (1) CN102693997A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545325A (zh) * 2012-07-13 2014-01-29 株式会社东芝 固体拍摄装置
CN110085607A (zh) * 2013-03-25 2019-08-02 索尼公司 固体摄像元件、摄像装置以及电子设备
CN112563296A (zh) * 2019-09-25 2021-03-26 意法半导体有限公司 光传感器
CN112992941A (zh) * 2019-12-17 2021-06-18 爱思开海力士有限公司 图像感测装置
CN114302785A (zh) * 2019-09-27 2022-04-08 松下知识产权经营株式会社 安装系统、头单元以及摄像方法
TWI875512B (zh) * 2023-12-18 2025-03-01 采鈺科技股份有限公司 影像感測器
US12402427B2 (en) 2018-12-26 2025-08-26 Sony Semiconductor Solutions Corporation Imaging device having a plurality of in-layer lenses with corresponding on-chip lenses

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140183334A1 (en) * 2013-01-03 2014-07-03 Visera Technologies Company Limited Image sensor for light field device and manufacturing method thereof
JP2015230896A (ja) * 2014-06-03 2015-12-21 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2016001682A (ja) * 2014-06-12 2016-01-07 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9513411B2 (en) 2014-07-31 2016-12-06 Visera Technologies Company Limited Double-lens structures and fabrication methods thereof
KR102302594B1 (ko) * 2014-09-16 2021-09-15 삼성전자주식회사 고 굴절지수의 마이크로 렌즈를 갖는 이미지 센서
KR102395775B1 (ko) * 2015-03-02 2022-05-09 삼성전자주식회사 컬러 필터를 포함하는 이미지 센서 및 상기 이미지 센서의 제조 방법
US9525005B2 (en) * 2015-05-18 2016-12-20 Visera Technologies Company Limited Image sensor device, CIS structure, and method for forming the same
US10665627B2 (en) 2017-11-15 2020-05-26 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor device and method for forming the image sensor device having a first lens and a second lens over the first lens
WO2020145218A1 (ja) * 2019-01-10 2020-07-16 富士フイルム株式会社 構造体、固体撮像素子および画像表示装置
KR102749135B1 (ko) * 2019-03-06 2025-01-03 삼성전자주식회사 이미지 센서 및 이미징 장치
JP2020155514A (ja) * 2019-03-19 2020-09-24 ソニーセミコンダクタソリューションズ株式会社 センサチップ及び電子機器
JP2022089610A (ja) * 2020-12-04 2022-06-16 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子、及び電子機器
US20230317751A1 (en) * 2022-03-31 2023-10-05 Visera Technologies Company Ltd. Image sensor and method of manufacturing the same

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US5691548A (en) * 1993-09-28 1997-11-25 Sharp Kabushiki Kaisha Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same
CN1505164A (zh) * 2002-10-25 2004-06-16 ��΢�뵼�壨�Ϻ����������ι�˾ 具有滤色器和微型凹透镜组合的图像传感器
CN1599073A (zh) * 2003-08-04 2005-03-23 松下电器产业株式会社 固体摄像器件、固体摄像器件的制造方法、摄影机
CN1815747A (zh) * 2004-12-24 2006-08-09 东部亚南半导体株式会社 Cmos图像传感器及其制造方法
US20080315339A1 (en) * 2006-10-23 2008-12-25 John Rennie Solid-state imaging device
US20090256225A1 (en) * 2008-04-11 2009-10-15 Sharp Kabushiki Kaisha Solid-state image capturing device, manufacturing method of the solid-state image capturing device, and electronic information device
CN101853869A (zh) * 2009-03-31 2010-10-06 索尼公司 固态成像装置、固态成像装置的制造方法以及电子设备

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04233759A (ja) 1990-12-28 1992-08-21 Matsushita Electron Corp 固体撮像装置およびその製造方法
JP3620237B2 (ja) * 1997-09-29 2005-02-16 ソニー株式会社 固体撮像素子
JP2009224361A (ja) 2008-03-13 2009-10-01 Panasonic Corp 固体撮像装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5691548A (en) * 1993-09-28 1997-11-25 Sharp Kabushiki Kaisha Solid state imaging device having high sensitivity and exhibiting high degree of light utilization and method of manufacturing the same
CN1505164A (zh) * 2002-10-25 2004-06-16 ��΢�뵼�壨�Ϻ����������ι�˾ 具有滤色器和微型凹透镜组合的图像传感器
CN1599073A (zh) * 2003-08-04 2005-03-23 松下电器产业株式会社 固体摄像器件、固体摄像器件的制造方法、摄影机
CN1815747A (zh) * 2004-12-24 2006-08-09 东部亚南半导体株式会社 Cmos图像传感器及其制造方法
US20080315339A1 (en) * 2006-10-23 2008-12-25 John Rennie Solid-state imaging device
US20090256225A1 (en) * 2008-04-11 2009-10-15 Sharp Kabushiki Kaisha Solid-state image capturing device, manufacturing method of the solid-state image capturing device, and electronic information device
CN101853869A (zh) * 2009-03-31 2010-10-06 索尼公司 固态成像装置、固态成像装置的制造方法以及电子设备

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545325A (zh) * 2012-07-13 2014-01-29 株式会社东芝 固体拍摄装置
CN110085607A (zh) * 2013-03-25 2019-08-02 索尼公司 固体摄像元件、摄像装置以及电子设备
CN110085607B (zh) * 2013-03-25 2023-01-17 索尼公司 固体摄像元件、摄像装置以及电子设备
US12402427B2 (en) 2018-12-26 2025-08-26 Sony Semiconductor Solutions Corporation Imaging device having a plurality of in-layer lenses with corresponding on-chip lenses
CN112563296A (zh) * 2019-09-25 2021-03-26 意法半导体有限公司 光传感器
CN114302785A (zh) * 2019-09-27 2022-04-08 松下知识产权经营株式会社 安装系统、头单元以及摄像方法
CN112992941A (zh) * 2019-12-17 2021-06-18 爱思开海力士有限公司 图像感测装置
TWI875512B (zh) * 2023-12-18 2025-03-01 采鈺科技股份有限公司 影像感測器

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US20140267847A1 (en) 2014-09-18
US8743265B2 (en) 2014-06-03
JP2012204354A (ja) 2012-10-22
US9131100B2 (en) 2015-09-08
US20120242873A1 (en) 2012-09-27

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Application publication date: 20120926