CN102693995A - 图像传感器 - Google Patents
图像传感器 Download PDFInfo
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- CN102693995A CN102693995A CN201210205846XA CN201210205846A CN102693995A CN 102693995 A CN102693995 A CN 102693995A CN 201210205846X A CN201210205846X A CN 201210205846XA CN 201210205846 A CN201210205846 A CN 201210205846A CN 102693995 A CN102693995 A CN 102693995A
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- dielectric material
- colour filter
- imageing sensor
- filter structure
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- 239000003989 dielectric material Substances 0.000 claims description 72
- 239000010410 layer Substances 0.000 claims description 30
- 230000000737 periodic effect Effects 0.000 claims description 23
- 239000011229 interlayer Substances 0.000 claims description 9
- 238000010276 construction Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 239000000463 material Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 4
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000003086 colorant Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000004807 localization Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201210205846.XA CN102693995B (zh) | 2012-06-20 | 2012-06-20 | 图像传感器 |
Applications Claiming Priority (1)
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CN201210205846.XA CN102693995B (zh) | 2012-06-20 | 2012-06-20 | 图像传感器 |
Publications (2)
Publication Number | Publication Date |
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CN102693995A true CN102693995A (zh) | 2012-09-26 |
CN102693995B CN102693995B (zh) | 2015-06-03 |
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CN201210205846.XA Expired - Fee Related CN102693995B (zh) | 2012-06-20 | 2012-06-20 | 图像传感器 |
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CN (1) | CN102693995B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108565274A (zh) * | 2018-05-07 | 2018-09-21 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271900B1 (en) * | 1998-03-31 | 2001-08-07 | Intel Corporation | Integrated microlens and color filter structure |
US6297071B1 (en) * | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
CN1507270A (zh) * | 2002-10-25 | 2004-06-23 | 华微半导体(上海)有限责任公司 | 具有集成薄膜红外滤光器的图像传感器 |
CN101350361A (zh) * | 2004-11-22 | 2009-01-21 | 精工爱普生株式会社 | El装置和电子机器 |
CN101609238A (zh) * | 2009-07-21 | 2009-12-23 | 友达光电股份有限公司 | 具有彩色滤光阵列的像素阵列基板以及显示面板 |
-
2012
- 2012-06-20 CN CN201210205846.XA patent/CN102693995B/zh not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6271900B1 (en) * | 1998-03-31 | 2001-08-07 | Intel Corporation | Integrated microlens and color filter structure |
US6297071B1 (en) * | 1998-07-22 | 2001-10-02 | Eastman Kodak Company | Method of making planar image sensor color filter arrays |
CN1507270A (zh) * | 2002-10-25 | 2004-06-23 | 华微半导体(上海)有限责任公司 | 具有集成薄膜红外滤光器的图像传感器 |
CN101350361A (zh) * | 2004-11-22 | 2009-01-21 | 精工爱普生株式会社 | El装置和电子机器 |
CN101609238A (zh) * | 2009-07-21 | 2009-12-23 | 友达光电股份有限公司 | 具有彩色滤光阵列的像素阵列基板以及显示面板 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108565274A (zh) * | 2018-05-07 | 2018-09-21 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
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Publication number | Publication date |
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CN102693995B (zh) | 2015-06-03 |
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Owner name: SHANGHAI ADVANCED RESEARCH INSTITUTE, CHINESE ACAD Free format text: FORMER OWNER: SHANGHAI ZHONGKE INSTITUTE FOR ADVANCED STUDY Effective date: 20130923 |
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Free format text: CORRECT: ADDRESS; FROM: 201210 PUDONG NEW AREA, SHANGHAI TO: 201203 PUDONG NEW AREA, SHANGHAI |
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Effective date of registration: 20130923 Address after: 201203 Shanghai city Pudong New Area Hartcourt Road No. 99 Applicant after: SHANGHAI ADVANCED Research Institute CHINESE ACADEMY OF SCIENCES Address before: 201210 Shanghai city Pudong New Area Hartcourt Road No. 99 Applicant before: SHANGHAI ADVANCED Research Institute CHINESE ACADEMY OF SCIENCES |
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