CN102684678A - Voltage switch circuit and intelligent storage device - Google Patents
Voltage switch circuit and intelligent storage device Download PDFInfo
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- CN102684678A CN102684678A CN2012101498477A CN201210149847A CN102684678A CN 102684678 A CN102684678 A CN 102684678A CN 2012101498477 A CN2012101498477 A CN 2012101498477A CN 201210149847 A CN201210149847 A CN 201210149847A CN 102684678 A CN102684678 A CN 102684678A
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Abstract
The invention is applicable to the field of integrated circuits, and provides a voltage switch circuit and an intelligent storage module. The voltage switch circuit comprises a first transistor, a second transistor, a pull-up resistor, a pull-down resistor, a current limiting resistor and a one-way conduction element, wherein a first end of the first transistor is connected with a voltage output end, a second end is connected with a second voltage input end, and a third end is connected with a second control end; a first end of the second transistor is connected with a first voltage input end, a second end of the second transistor is connected with one end of the one-way conduction element, and a third end of the second transistor is connected with the first voltage input end through the pull-up resistor; and a third end of the second transistor is also connected with a first control end.. The voltage switch circuit provided by the invention can switch different externally-input working voltages into the working voltages adapting to different operation needs through the first transistor, the second transistor, the pull-up resistor, the pull-down resistor and the current limiting resistor; and moreover, the voltage switch circuit has the characteristics of low cost and high stability.
Description
Technical field
The invention belongs to integrated circuit fields, relate in particular to a kind of voltage commutation circuit and smart storage device.
Background technology
Along with the increase of integrate circuit function, for adapting to various operations, disparate modules or same module need to tend to different operating voltages in the integrated circuit when handling different task.Therefore, need in the integrated circuit and can import the voltage commutation circuit that different operating voltage switches to the required operating voltage of adaptation different operation to the external world.
Addressing the above problem generally has following two kinds of ways, and the first customizes special chip, promptly as required voltage commutation circuit is integrated in the chip, and it two is to use common chip, but on the circuit that common chip is formed, inserts voltage commutation circuit.The former advantage is that circuit level is high, and circuit working is stable, but the custom chip expense is higher, and right latter's cost is lower, but circuit working stability is poor slightly.
Summary of the invention
The purpose of the embodiment of the invention is to provide a kind of voltage commutation circuit, and it is higher to be intended to solve existing custom chip expense, the problem of the poor stability of voltage commutation circuit in the non-custom chip.
The embodiment of the invention is achieved in that a kind of voltage commutation circuit, comprising: the first transistor, transistor seconds, pull-up resistor, pull down resistor, current-limiting resistance and unidirectional breakover element; Said current-limiting resistance and said pull down resistor are connected in series between first voltage input end and the ground successively; The end that is connected in series of said current-limiting resistance and said pull down resistor is connected to second control end; First end of said the first transistor is connected to voltage output end, and second end connects second voltage input end, and the 3rd end is connected to said second control end, the 3rd end its first end of control of said the first transistor and the conducting between second end; First end of said transistor seconds connects first voltage input end, and second end of said transistor seconds is connected to an end of said unidirectional breakover element, and the 3rd end of said transistor seconds is connected to said first voltage input end through said pull-up resistor; The 3rd end of said transistor seconds also is connected to said first control end; The 3rd end its first end of control of said transistor seconds and the conducting between second end; The other end of said unidirectional breakover element is connected to voltage output end.
Further, said unidirectional breakover element is a diode, and the anode of said diode is connected with said transistor seconds, and the negative electrode of said diode is connected to said voltage output end.
Further, said the first transistor is: FET, metal-oxide-semiconductor or controllable silicon.
Further, said transistor seconds is: FET, metal-oxide-semiconductor or controllable silicon.
Further, said metal-oxide-semiconductor is the PMOS pipe.
The purpose of the embodiment of the invention also is a kind of smart storage device is provided, and comprises main control module and the intelligent IC, memory module and the voltage commutation circuit that are connected with said main control module respectively, and said voltage commutation circuit is above-mentioned voltage commutation circuit.
Further, said smart storage device is an intelligent SD card.
Further, the contact interface that is connected with the terminal of said smart storage device is the IS07816 interface.
Further, the wireless radio interface that is connected with the terminal of said smart storage device is the SWP interface.
Further, said terminal comprises: the power module, controller and the NFC module that connect successively, and said NFC module also is connected with said intelligent IC with said voltage commutation circuit respectively, and said controller also is connected with said main control module.
In embodiments of the present invention, voltage commutation circuit can realize that through the first transistor, transistor seconds, pull-up resistor, pull down resistor and current-limiting resistance the external world is imported different operating voltage switches to the required operating voltage of adaptation different operation; Cost is low, can stablize the multiple different operating voltages of output; In addition, comprise the smart storage device interface of voltage commutation circuit can be various and circuit stable.
Description of drawings
Fig. 1 is the physical circuit figure of the voltage commutation circuit that provides of the embodiment of the invention;
Fig. 2 is the modular structure principle schematic of the smart storage device that provides of the embodiment of the invention.
Embodiment
In order to make the object of the invention, technical scheme and advantage clearer,, the present invention is further elaborated below in conjunction with accompanying drawing and embodiment.Should be appreciated that specific embodiment described herein only in order to explanation the present invention, and be not used in qualification the present invention.
Fig. 1 shows the circuit of the voltage commutation circuit that the embodiment of the invention provides, and for the ease of explanation, only shows the part relevant with the embodiment of the invention, and details are as follows:
Voltage commutation circuit comprises: the first transistor 1, transistor seconds 2, unidirectional breakover element 3, pull down resistor R2, current-limiting resistance R3 and pull-up resistor R1; Wherein, current-limiting resistance R3 and pull down resistor R2 are connected in series between the first voltage input end V1 and the ground successively; The end that is connected in series of current-limiting resistance R3 and pull down resistor R2 is connected to the second control end P2; First end of the first transistor 1 connects voltage output end V2, and second end connects the second voltage input end V, and the 3rd end is connected to P2, the 3rd end its first end of control of the first transistor 1 and the conducting between second end; First end of transistor seconds 2 connects the first voltage input end V1, and second end of transistor seconds 2 is connected to an end of unidirectional breakover element 3, and the 3rd end of transistor seconds 2 is connected to the first voltage input end V1 through pull-up resistor R1; The 3rd end of transistor seconds 2 also is connected to the 3rd end its first end of control of the first control end P1 transistor seconds 2 and the conducting between second end; The other end of unidirectional breakover element 3 is connected to voltage output end V2.
As one embodiment of the present of invention, unidirectional breakover element 3 can be diode D1, and the anode of diode D1 is connected with transistor seconds 2, and the negative electrode of diode D1 is connected to voltage output end V2.
In embodiments of the present invention, the first transistor 1 and transistor seconds 2 can be FET, metal-oxide-semiconductor or controllable silicon; When the first transistor 1 and transistor seconds 2 were metal-oxide-semiconductor, the first transistor 1 can be for PMOS manages Q2, and transistor seconds 2 can be for PMOS manages Q1, and the grid of PMOS pipe Q2 is connected the end that is connected in series of pull down resistor R2 and current-limiting resistance R3; The source electrode of PMOS pipe Q2 connects voltage output end V2, and the drain electrode of PMOS pipe Q2 connects the second voltage input end V; The grid of PMOS pipe Q1 connects pull-up resistor R1, and the source electrode of PMOS pipe Q1 connects the first voltage input end V1, and the drain electrode of PMOS pipe Q1 is connected to the anode of diode D1.
For the voltage commutation circuit that further the explanation embodiment of the invention provides, the first transistor 1 is example with PMOS pipe Q1, unidirectional breakover element 3 with diode D1 with PMOS pipe Q2, transistor seconds 2, and it is following in conjunction with Fig. 2 its operation principle to be detailed:
When work, whole voltage commutation circuit is that acquiescence PMOS pipe Q1 closes, and PMOS pipe Q2 opens; Be under the normality, the first control end P1 is in high-impedance state, and the first control end P1 is a cut-off state; PMOS pipe Q1 closes, and this moment, the second control end P2 was in low resistive state, and the second control end P2 is conducting; PMOS pipe Q2 opens, and the operating voltage of voltage output end V2 output is the voltage of the second voltage input end V.A kind of in addition mode of operation is: the first control end P1 is in low resistive state; This moment, the first control end P1 was conducting; PMOS pipe Q1 opens, and this moment, the second control end P2 was in high-impedance state, and the second control end P2 is for ending; PMOS pipe Q2 closes, and the operating voltage of voltage output end V2 output is the voltage of the first voltage input end V1.Under above-mentioned two kinds of mode of operations, V2 end output services voltage is V or V1, and promptly the voltage switch unit supplies the output of V2 end as required with selecting one of which between the second voltage input end V or the first voltage input end V1.
Wherein, resistance R 1 is the pull-up resistor of the grid G of PMOS pipe Q1, guarantees that normality closes; Resistance R 2 is pull down resistors, when guaranteeing that the first voltage input end V1 does not have electricity, and the automatic conducting of PMOS pipe Q2; Resistance R 3 is the current-limiting resistances when drawing on the second control end P2; Resistance R 2 constitutes a bleeder circuit with R3, in the circuit start stage, during second control end P2 output high-impedance state; Intermediate voltage Vm＞the V-vgs that guarantees it (wherein; V-vgs representes the conducting voltage parameter of PMOS), guarantee that promptly PMOS pipe Q2 closes, and misoperation can not occur in the circuit start process.The existence of resistance R 3 has guaranteed that also the first voltage input end V1 is not under the electrifying condition; The automatic conducting of PMOS pipe Q2; This moment, the grid voltage of V2 was pulled down to 0 by R3, and there is certain voltage in the source electrode of PMOS pipe Q2 because of the existence of bulk-effect diode, and this voltage has been opened PMOS pipe Q2; And causing grid voltage more stable, this is the switch of a positive feedback; When P1 operated, the voltage that V1 comes can not pour in down a chimney the end to V to the bulk-effect diode direction of PMOS pipe Q2, has guaranteed the stable of power supply yet.Adopt above-mentioned voltage commutation circuit cost low, stable strong.
In order on smart storage device 200, to incorporate mobile payment function (NFC); Need be on smart storage device 200 module of integrated belt NFC function; Be to need configuration contact interface (like IS07816 contact interface) and configuration wireless radio interface (like the SWP interface) on the smart storage device 200; Smart storage device 200 with contact interface and wireless radio interface has the ability to work at two interfaces; And the operating voltage of SWP interface and contact interface is not in full accord, therefore, possibly need different operating voltages.Address the above problem following two kinds of ways are generally arranged; The first customizes special chip; Promptly as required the function of voltage commutation circuit is integrated in the main control chip of smart storage device 200; Be custom chip, it two is to use the normal memory main control chip, but on the circuit that this common main control chip is formed, inserts voltage commutation circuit.The former advantage is that circuit level is high, and circuit working is stable, but the custom chip expense is higher, and right latter's cost is lower, but circuit working stability is poor slightly.
The smart storage device that the embodiment of the invention provides is employed on the common main control chip and inserts voltage commutation circuit, and smart storage device 200 can be used with the terminal; Fig. 2 shows the modular structure principle of this smart storage device, for the ease of explanation, only shows the part relevant with the embodiment of the invention, and details are as follows:
A kind of smart storage device 200 comprises: main control module: 201 and the intelligent IC 204, memory module 203 and the voltage commutation circuit 202 that are connected with main control module 201 respectively; Wherein, Voltage commutation circuit 202 is above-mentioned voltage commutation circuit, repeats no more at this.
In embodiments of the present invention, smart storage device 200 also comprises contact interface and the wireless radio interface that is connected with terminal 100.
In embodiments of the present invention, terminal 100 comprises: the power module 101, controller 102 and the NFC module 103 that connect successively, and wherein NFC module 103 also is connected with intelligent IC 204 with voltage commutation circuit 202 respectively, and controller 102 also is connected with main control module 201.
As one embodiment of the present of invention, intelligent IC 204 is supported the NFC function, promptly has the NFC interface, and the contact interface can be the IS07816 interface; Wireless radio interface can be the SWP interface; Intelligent IC 204 can communicate through the SWP interface with NFC module 103; Can communicate through 7816 interfaces between main control module 201 and the intelligent IC 204.
In embodiments of the present invention, smart storage device 200 can be intelligent SD card, also can be all kinds of smart cards of other non-SD interface.And terminal 100 can be smart mobile phone, panel computer, computer etc.
The operation principle of the smart storage device 200 that provides for further the explanation embodiment of the invention, existing smart storage device 200 are example with the intelligent SD card, and terminal 100 is that example describes in detail with the smart mobile phone; Particularly, intelligent SD card is installed in the mobile phone, under the assistance of mobile phone, realizes the NFC function, wherein: the end of the second voltage input end V links to each other with mobile phone NFC chip voltage output; The end of the first voltage input end V1 links to each other with intelligent SD card master control voltage output end; The other end of the second voltage input end V, the first voltage input end V1 links to each other with the input of voltage commutation circuit 202, and the output of voltage commutation circuit 202 is V2, and the V2 end links to each other with intelligent IC operating voltage input; P1, P2 respectively with intelligent SD card in master control control I/O be connected, P1, P2 for ending, are conducting during low resistive state during for high-impedance state.
In embodiments of the present invention; Because of the operating voltage of SWP interface on the extraneous different N FC equipment is not in full accord; In this case; The operating voltage of NFC module 103 need be consistent with the operating voltage of NFC functional module on extraneous NFC card reader or the relevant NFC equipment on the terminal, and therefore, the operating voltage of intelligent IC on the intelligent SD card and the NFC module 103 on the terminal need change along with the variation of extraneous NFC equipment work voltage.For adapting to the variation of extraneous NFC equipment work voltage; The high configuration of whole voltage commutation circuit 202 acquiescence P1 is ended, Q1 closes, the conducting of P2 low resistance state, and Q2 opens; Acquiescence mobile phone NFC chip voltage output links to each other with intelligent IC and keeps power supply state like this; The operating voltage of intelligent IC is that NFC chip output voltage is the intelligent IC power supply, makes things convenient for intelligent IC can carry out the NFC operation at any time like this, even can change along with the operating voltage of extraneous NFC and change.
Do not carry out NFC when operation when terminal 100, when promptly carrying out non-NFC operation, i.e. when intelligent SD card master control is operated intelligent IC through 7816 interfaces; Its operating voltage is not associated with external device; P1 conducting this moment open Q1, and the P2 high-impedance state ends; Close Q2, this moment, the operating voltage of intelligent IC was just provided by the intelligent SD card master control.
The working method of the intelligent SD card of the above-mentioned NFC of having function can be divided into to sow, and the NFC mode is worked, non-NFC mode is worked: when for the NFC working method, be successively: power module, controller, NFC module, voltage switch unit, intelligent IC; When being the NFC working method; The SWP interface communication of intelligent IC need operating voltage confirm according to extraneous NFC card reader or relevant NFC equipment by terminal NFC module; Promptly need be consistent with the operating voltage of external device; Because the operating voltage of extraneous NFC card reader or relevant NFC equipment is uncertain, such as voltages such as 1.8V, 3.3V.Be that the output voltage of NFC module on the terminal is directly supplied with intelligent IC through the voltage switch unit and used, at this moment, NFC module, intelligent IC are identical with the operating voltage of extraneous NFC equipment.When being non-NFC working method, be successively: power module, controller, voltage switch unit, master control, intelligent IC; Do not have the work that external device is participated in intelligent SD card this moment, the operating voltage of master control, intelligent IC is confirmed, is 3.3V or other voltage, and the intelligent IC operating voltage is consistent with the master control operating voltage of SD card.
Therefore; When intelligent SD card was operated in the NFC working method, the operating voltage of intelligent IC was variable, when intelligent SD card is operated in non-NFC working method; The operating voltage of intelligent IC is constant; This provides selectable operating voltage need for the intelligent IC in the intelligent SD card with regard to causing, thereby supports intelligent SD card under different state, to work, and the effect of voltage commutation circuit just is to provide as required different operating voltages to supply intelligent SD card to use.
The voltage commutation circuit that the embodiment of the invention provides can realize that through the first transistor, transistor seconds, pull down resistor, pull-up resistor and current-limiting resistance the external world is imported different operating voltage switches to the required operating voltage of adaptation different operation; Cost is low, can stablize the multiple different operating voltages of output; In addition, comprise smart storage device 200 interfaces of voltage commutation circuit can be various and circuit stable.
The above is merely preferred embodiment of the present invention, not in order to restriction the present invention, all any modifications of within spirit of the present invention and principle, being done, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a voltage commutation circuit is characterized in that, comprising:
The first transistor, transistor seconds, pull-up resistor, pull down resistor, current-limiting resistance and unidirectional breakover element;
Said current-limiting resistance and said pull down resistor are connected in series between first voltage input end and the ground successively; The end that is connected in series of said current-limiting resistance and said pull down resistor is connected to second control end;
First end of said the first transistor is connected to voltage output end, and second end connects second voltage input end, and the 3rd end is connected to said second control end, the 3rd end its first end of control of said the first transistor and the conducting between second end;
First end of said transistor seconds connects first voltage input end, and second end of said transistor seconds is connected to an end of said unidirectional breakover element, and the 3rd end of said transistor seconds is connected to said first voltage input end through said pull-up resistor; The 3rd end of said transistor seconds also is connected to said first control end; The 3rd end its first end of control of said transistor seconds and the conducting between second end;
The other end of said unidirectional breakover element is connected to voltage output end.
2. voltage commutation circuit as claimed in claim 1 is characterized in that, said unidirectional breakover element is a diode, and the anode of said diode is connected with said transistor seconds, and the negative electrode of said diode is connected to said voltage output end.
3. voltage commutation circuit as claimed in claim 1 is characterized in that, said the first transistor is: FET, metal-oxide-semiconductor or controllable silicon.
4. voltage commutation circuit as claimed in claim 1 is characterized in that, said transistor seconds is: FET, metal-oxide-semiconductor or controllable silicon.
5. like claim 3 or 4 described voltage commutation circuits, it is characterized in that said metal-oxide-semiconductor is the PMOS pipe.
6. a smart storage device comprises main control module and the intelligent IC, memory module and the voltage commutation circuit that are connected with said main control module respectively, it is characterized in that, said voltage commutation circuit is each described voltage commutation circuit of claim 1-5.
7. smart storage device as claimed in claim 6 is characterized in that, said smart storage device is an intelligent SD card.
8. smart storage device as claimed in claim 6 is characterized in that, the contact interface that said smart storage device is connected with the terminal is the IS07816 interface.
9. smart storage device as claimed in claim 7 is characterized in that, the wireless radio interface that said smart storage device is connected with the terminal is the SWP interface.
10. smart storage device as claimed in claim 7; It is characterized in that; Said terminal comprises: the power module, controller and the NFC module that connect successively, and said NFC module also is connected with said intelligent IC with said voltage commutation circuit respectively, and said controller also is connected with said main control module.
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| CN201210149847.7A CN102684678B (en) | 2012-05-03 | 2012-05-03 | Voltage switch circuit and intelligent storage device |
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| CN201210149847.7A CN102684678B (en) | 2012-05-03 | 2012-05-03 | Voltage switch circuit and intelligent storage device |
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| CN102684678B CN102684678B (en) | 2014-05-07 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105612696A (en) * | 2013-10-10 | 2016-05-25 | 日立汽车系统株式会社 | Electronic control device |
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| CN101097606A (en) * | 2006-06-29 | 2008-01-02 | 北京握奇数据系统有限公司 | Smart card operating system and method thereof |
| CN101533479A (en) * | 2008-03-11 | 2009-09-16 | 北京同方微电子有限公司 | Dual-interface smart card power source management circuit |
| EP2346168A2 (en) * | 2010-01-12 | 2011-07-20 | Thales Defence Deutschland GmbH | Level converter circuit |
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| US20020039034A1 (en) * | 2000-09-29 | 2002-04-04 | Yoshimi Kohda | FET-OR circuit and power supply circuit using the same |
| CN101043176A (en) * | 2006-03-24 | 2007-09-26 | 奇景光电股份有限公司 | Voltage switching device |
| CN101097606A (en) * | 2006-06-29 | 2008-01-02 | 北京握奇数据系统有限公司 | Smart card operating system and method thereof |
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Effective date of registration: 20160527 Address after: 518000 building 4, software park, Nanshan District hi tech Zone, Guangdong, Shenzhen, 306-310 Patentee after: SHENZHEN LONGSYS ELECTRONICS CO., LTD. Address before: 518000, Guangdong, Nanshan District Province, Shenzhen Road, No. 8 financial services technology innovation base, 8 floor, A, B, C, D, E,, F1 Patentee before: Shenzhen jiangbolong Electronic Co., Ltd. |
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Address after: Room 801, building 1, financial service technology innovation base, No.8 Kefa Road, Science Park community, Yuehai street, Nanshan District, Shenzhen, Guangdong 518054 Patentee after: Shenzhen Baize totem Technology Co.,Ltd. Address before: 518000 306-310, building 4, software park, high tech Zone, Nanshan District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN LONGSYS ELECTRONICS Co.,Ltd. |
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