CN102209129B - Mobile phone - Google Patents
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- CN102209129B CN102209129B CN201110142957.6A CN201110142957A CN102209129B CN 102209129 B CN102209129 B CN 102209129B CN 201110142957 A CN201110142957 A CN 201110142957A CN 102209129 B CN102209129 B CN 102209129B
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Abstract
The invention discloses a mobile phone, which comprises subscriber identity module (SIM) card slots, a power management chip, a near field communication (NFC) control chip, a low dropout linear regulator and controlled switches. The SIM card slot comprises a power input end. The power management chip comprises a power output end and a control voltage output end, wherein the power output end is connected with the power input end; and the control voltage output end outputs control voltage when the mobile phone works normally, and stops outputting the control voltage when the mobile phone is turned off. The NFC control chip generates enabling voltage when the mobile phone approaches a card reader. The low dropout linear regulator outputs second power supply voltage under the control of the enabling voltage. The first end of the controlled switch is connected with the low dropout linear regulator. The third end of the controlled switch is connected with the power input end. The second end of the controlled switch is connected with the control voltage output end, is disconnected from the first and third ends off when acquiring the control voltage, and is connected with the first and third ends when not acquiring the control voltage. In such a way, by the technical scheme, an NFC smart card can work normally to realize a card simulation function whether the mobile phone is in a normal working state or an off state.
Description
Technical field
The present invention relates to mobile phone near field communication (NFC) field, particularly relate to a kind of mobile phone.
Background technology
NFC(Near Field Communication, near field communication (NFC)) more and more popularize in the middle of people's daily life, user utilizes NFC to carry out quickly and easily in-plant wireless telecommunications, is generally used for the E-Payment of small amount, for example mass transit card.Mobile phone, as the daily communication tool of carrying of people, is integrated in NFC function on mobile phone, can promote widely user and experience the function of using NFC.
The mobile phone with NFC function of prior art is provided with SIM card draw-in groove, NFC smart card can be inserted in SIM card draw-in groove, make mobile phone can expand NFC function, but, in the prior art, only adopt power management chip to power to SIM card draw-in groove, therefore, when mobile phone is normally worked, the NFC smart card that energy assurance is inserted in SIM card draw-in groove can normally be worked, but, at mobile phone under off-mode, because power management chip quits work, therefore, the NFC smart card being inserted in SIM card draw-in groove can not obtain effective power supply, thereby can not realize card analog functuion.
Therefore, need badly a kind of mobile phone is provided, the mobile phone in prior art to solve with NFC function can not be realized the technical problem of card analog functuion when the mobile phone shutdown.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of mobile phone, to solve the problems of the technologies described above.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of mobile phone is provided, comprise: SIM card draw-in groove, comprise the first SIM card draw-in groove and the second SIM card draw-in groove, the first SIM card draw-in groove is provided with the first power input, the second SIM card draw-in groove is provided with second source input, the first SIM card draw-in groove is powered to NFC smart card by the first power input when NFC smart card inserts, and the second SIM card draw-in groove is powered to NFC smart card by second source input when NFC smart card inserts, power management chip, comprise: the first power output end, the first power output end is connected with the first power input, to provide the first supply power voltage to the first SIM card draw-in groove when mobile phone is normally worked, and when mobile phone shutdown, stops providing the first supply power voltage to the first SIM card draw-in groove, second source output, second source output is connected with second source input, to provide the first supply power voltage to the second SIM card draw-in groove when mobile phone is normally worked, and when mobile phone shutdown, stops providing the first supply power voltage to the second SIM card draw-in groove, control voltage output end, when mobile phone is normally worked, voltage is controlled in output, stops output and control voltage when mobile phone shutdown, NFC control chip, during near card reader, produces enable voltage at mobile phone, low pressure difference linear voltage regulator is exported the second supply power voltage under the control of enable voltage, controlled switch, comprise the first controlled switch and the second controlled switch, the first end of the first end of the first controlled switch and the second controlled switch is connected with low pressure difference linear voltage regulator, to obtain the second supply power voltage, the 3rd end of the first controlled switch is connected with power input, the 3rd end of the second controlled switch is connected with second source input, the second end of the first controlled switch is connected with control voltage output end with the second end of the second controlled switch, the second end of the first controlled switch is when getting control voltage, disconnect first end and the 3rd end of the first controlled switch, when not getting control voltage, the first end and the 3rd end that connect the first controlled switch, the second end of the second controlled switch is when getting control voltage, disconnect first end and the 3rd end of the second controlled switch, when not getting control voltage, the first end and the 3rd end that connect the second controlled switch.
Wherein, the first controlled switch comprises a P type metal-oxide-semiconductor and the 2nd P type metal-oxide-semiconductor, the grid of the one P type metal-oxide-semiconductor connects the grid of the 2nd P type metal-oxide-semiconductor, the source electrode of the one P type metal-oxide-semiconductor connects the source electrode of the 2nd P type metal-oxide-semiconductor, the drain electrode of the one P type metal-oxide-semiconductor is the first end of the first controlled switch, the tie point of the grid of the grid of the one P type metal-oxide-semiconductor and the 2nd P type metal-oxide-semiconductor is as the second end of the first controlled switch, and the drain electrode of the 2nd P type metal-oxide-semiconductor is the 3rd end of the first controlled switch.
Wherein, the second controlled switch comprises the 3rd P type metal-oxide-semiconductor and the 4th P type metal-oxide-semiconductor, the grid of the 3rd P type metal-oxide-semiconductor connects the grid of the 4th P type metal-oxide-semiconductor, the source electrode of the 3rd P type metal-oxide-semiconductor connects the source electrode of the 4th P type metal-oxide-semiconductor, the drain electrode of the 3rd P type metal-oxide-semiconductor is the first end of the second controlled switch, the tie point of the grid of the grid of the 3rd P type metal-oxide-semiconductor and the 4th P type metal-oxide-semiconductor is as the second end of the second controlled switch, and the drain electrode of the 4th P type metal-oxide-semiconductor is the 3rd end of the second controlled switch.
Wherein, mobile phone further comprises the first resistance, and the first end of the first resistance is connected with control voltage output end, and the second end of the first resistance is connected with the second end of controlled switch.
Wherein, mobile phone further comprises the second resistance, and the first end of the second resistance is connected with control voltage output end, the second end ground connection of the second resistance.
Wherein, nearly mobile phone further comprises battery, and battery is connected with power management chip and low pressure difference linear voltage regulator respectively, to power to power management chip and low pressure difference linear voltage regulator simultaneously.
The invention has the beneficial effects as follows: be different from prior art, mobile phone of the present invention under normal operating conditions to utilizing power management chip to provide power supply to SIM card draw-in groove, and under off-mode, utilizing low pressure difference linear voltage regulator to provide power supply for SIM card draw-in groove, thereby make NFC smart card no matter at mobile phone under normal operating conditions, or under off-mode, all can normally work, realize card analog functuion.
Accompanying drawing explanation
Fig. 1 is the electrical block diagram of the preferred embodiment of mobile phone of the present invention.
Embodiment
First refer to Fig. 1, Fig. 1 is the electrical block diagram of the preferred embodiment of mobile phone of the present invention.As shown in Figure 1, according to the mobile phone 10 of the embodiment of the present invention, comprise the first SIM card draw-in groove 11, the second SIM card draw-in groove 12, the first controlled switch 13, the second controlled switch 14, power management chip 15, low pressure difference linear voltage regulator 16, NFC control chip 17, battery 18, the first resistance R 1, the second resistance R 2 and capacitor C 1.
In the present embodiment, the first SIM card draw-in groove 11 is provided with the first power input 111, to power to a NFC smart card by the first power input 111 when a NFC smart card (not shown) is inserted the first SIM card draw-in groove 11.The second SIM card draw-in groove 12 is provided with second source input 121, to power to the 2nd NFC smart card by second source input 121 when the 2nd NFC smart card (not shown) is inserted the second SIM card draw-in groove 12.
Low pressure difference linear voltage regulator 16(Low Dropout Regulator, LDO) for exporting the second supply power voltage, it comprises IN port, EN port, OUT port and grounding ports, the grounding ports ground connection of low pressure difference linear voltage regulator 16.In the present embodiment, the maximum voltage value of the second supply power voltage of the OUT port of low pressure difference linear voltage regulator 16 output is 1.8V.
Therefore, at mobile phone 10 during near card reader, NFC control chip 17 obtains the voltage of 2.5V from VDHF port, and produces the enable voltage of 1.8V to the EN port of low pressure difference linear voltage regulator 16, makes low pressure difference linear voltage regulator 16 export the second supply power voltage from OUT port.
Please, with further reference to Fig. 1, the first controlled switch 13 comprises first end 131, the second end 132 and the 3rd end 133.The second controlled switch 14 comprises first end 141, the second end 142 and the 3rd end 143.Wherein, the first end 131 of the first controlled switch 13 and the first end 141 of the second controlled switch 14 are connected to obtain the second supply power voltage with the OUT end of low pressure difference linear voltage regulator 16.The second end 132 of the first controlled switch 13 is connected with control voltage output end 153 with the second end 142 of the second controlled switch 14.The 3rd end 133 of the first controlled switch 13 is connected with the first power input 111, and the 3rd end 143 of the second controlled switch 14 is connected with second source input 121.
Wherein, when mobile phone 10 normal work, the second end 132 of the first controlled switch 13 and the second end 142 of the second controlled switch 14 obtain control voltage from controlling voltage output end 153, the 3rd end 133 of the first end 131 of the first controlled switch 13 and the first controlled switch disconnects, the 3rd end 143 of the first end 141 of the second controlled switch 14 and the second controlled switch disconnects, now, the first SIM card draw-in groove 11 obtains the first supply power voltage by the first power input 111 and the first power output end 151 from power management chip 15, the second SIM card draw-in groove 12 crosses second source input 121 and the first power output end 152 obtains the first supply power voltage from power management chip 15.
And at mobile phone 10 during in off-mode, power management chip 15 quits work, and stops output and control voltage and the first supply power voltage, at mobile phone 10 during near card reader, low pressure difference linear voltage regulator 16 obtains enable signal, by OUT port, provides the second supply power voltage.The second end 132 of the first controlled switch 13 and the second end 142 of the second controlled switch 14 stop obtaining control voltage from controlling voltage output end 153, now, the 3rd end 133 of the first end 131 of the first controlled switch 13 and the first controlled switch 13 links together, therefore, the first SIM card draw-in groove 11 obtains the second supply power voltage by the first power input 111, the 3rd end 133 of the first controlled switch 13 and the first end 131 of the first controlled switch 13 from the OUT end of low pressure difference linear voltage regulator 16.In like manner, the second SIM card draw-in groove 12 obtains the second supply power voltage by the 3rd end 143 of second source input 121, the second controlled switch 14 and the first end 141 of the second controlled switch 14 from the OUT end of low pressure difference linear voltage regulator 16.
Therefore, no matter at mobile phone 10, normally work, or be that mobile phone 10 is in off-mode, as long as mobile phone 10 is near card reader, the first SIM card draw-in groove 11 and the second SIM card draw-in groove 12 all can obtain stable power supply input, thereby assurance mobile phone 10 all can be realized card analog functuion under any state.
Please with further reference to Fig. 1, in a preferred embodiment of the invention, mobile phone 10 is further provided with the first resistance R 1 and the second resistance R 2, the first end 191 of the first resistance R 1 is connected with control voltage output end 153, the second end 192 of the first resistance R 1 is connected with the second end 142 of the second end 132 of the first controlled switch 13 and the second controlled switch 14, the first end 193 of the second resistance R 2 is connected with control voltage output end 153, the second end 194 ground connection of the second resistance R 2.The first resistance R 1 can play the effect of current-limiting protection, and the resistance value of the second resistance R 2 is set to be greater than 100k Ω, can avoid controlling voltage output end 153 leakage currents excessive.
It should be noted that the first controlled switch 13 and the second controlled switch 14 can various controlled switch modules realize in prior art, as relay, analog switch etc.And the first controlled switch 13 and the second controlled switch 14 can be composed in series by two metal-oxide-semiconductor reversal connections in a preferred embodiment of the invention.
Wherein, the first controlled switch 13 comprises a P type metal-oxide-semiconductor M1 and the 2nd P type metal-oxide-semiconductor M2.The grid of the one P type metal-oxide-semiconductor M1 connects the grid of the 2nd P type metal-oxide-semiconductor M2, and the source electrode of a P type metal-oxide-semiconductor M1 connects the source electrode of the 2nd P type metal-oxide-semiconductor M2.The drain electrode of the one P type metal-oxide-semiconductor M1 is the first end 131 of the first controlled switch 13, the tie point of the grid of the grid of the one P type metal-oxide-semiconductor M1 and the 2nd P type metal-oxide-semiconductor M2 is the 3rd end 133 of the first controlled switch 13 as the drain electrode of the second end 132, the two P type metal-oxide-semiconductor M2 of the first controlled switch 13.
The second controlled switch 14 comprises the 3rd P type metal-oxide-semiconductor M3 and the 4th P type metal-oxide-semiconductor M4, and the grid of the 3rd P type metal-oxide-semiconductor M3 connects the grid of the 4th P type metal-oxide-semiconductor M4, and the source electrode of the 3rd P type metal-oxide-semiconductor M3 connects the source electrode of the 4th P type metal-oxide-semiconductor M4.The drain electrode of the 3rd P type metal-oxide-semiconductor M3 is the first end 141 of the second controlled switch 14, the tie point of the grid of the grid of the 3rd P type metal-oxide-semiconductor M3 and the 4th P type metal-oxide-semiconductor M4 is the 3rd end 143 of the second controlled switch 14 as the drain electrode of the second end 142, the four P type metal-oxide-semiconductor M4 of the second controlled switch 14.
Wherein, the operation principle of the first controlled switch 13 is as follows: between the drain electrode of a P type metal-oxide-semiconductor M1 and source electrode, can be equivalent to a parasitic diode D1, therefore, in the situation that no matter whether the grid of a P type metal-oxide-semiconductor M1 get, control voltage, as long as the OUT of low pressure difference linear voltage regulator 16 end output the second operating voltage, this second operating voltage all can transfer to by the drain and gate of a P type metal-oxide-semiconductor M1 source electrode of the 2nd P type metal-oxide-semiconductor M2.Therefore, source voltage at the 2nd P type metal-oxide-semiconductor M2 is under the prerequisite of the second operating voltage, as long as the grid voltage of the 2nd P type metal-oxide-semiconductor M2 is less than the second operating voltage, when the difference that meets grid level and source voltage is less than 0V, just can be so that the drain electrode of the 2nd P type metal-oxide-semiconductor and source electrode conducting, therefore stop output at power management chip, control voltage, the grid voltage of the 2nd P type metal-oxide-semiconductor M2 can not be obtained while controlling voltage, the grid voltage of the 2nd P type metal-oxide-semiconductor M2 is 0V, now, the drain electrode of the 2nd P type metal-oxide-semiconductor and source electrode conducting, make exportable the second operating voltage to the first SIM card card slot 11 of drain electrode of the 2nd P type metal-oxide-semiconductor M2.
Similarly, the operation principle of the second controlled switch 14 is consistent with the first controlled switch 13, in this, repeats no more.
Because above-mentioned two metal-oxide-semiconductors have lower conducting resistance, it is generally 0.2 ohm of left and right, is applicable to very much the requirement of NFC smart card to power supply, therefore, in a preferred embodiment of the invention, preferably adopts above-mentioned two metal-oxide-semiconductors as controlled switch.
It should be noted that, in the present embodiment, adopted the technical scheme of two controlled switchs (i.e. the first controlled switch 13 and the second controlled switch 14) and two SIM card draw-in grooves (i.e. the first SIM card draw-in groove 11 and the second SIM card draw-in groove 12) to make elaboration, but, in other embodiments of the invention, also can only adopt single controlled switch and single SIM card draw-in groove, make single SIM card draw-in groove or all can obtain corresponding operating voltage under off-mode in the normal work of mobile phone 10.In addition, as long as the performance of low pressure difference linear voltage regulator 16 and power management chip 15 allows, plural controlled switch and SIM card draw-in groove also can be set, and the present invention does not do concrete restriction to its quantity, and those skilled in the art all can make respective extension after understanding inventive concept.
Therefore, mobile phone of the present invention under normal operating conditions to utilizing power management chip to provide power supply to SIM card draw-in groove, and under off-mode, utilizing low pressure difference linear voltage regulator to provide power supply for SIM card draw-in groove, thereby make NFC smart card no matter at mobile phone under normal operating conditions, or under off-mode, all can normally work, realize card analog functuion.
These are only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes specification of the present invention and accompanying drawing content to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (6)
1. a mobile phone, is characterized in that, comprising:
SIM card draw-in groove, comprise the first SIM card draw-in groove and the second SIM card draw-in groove, described the first SIM card draw-in groove is provided with the first power input, described the second SIM card draw-in groove is provided with second source input, described the first SIM card draw-in groove is powered to described NFC smart card by described the first power input when NFC smart card inserts, and described the second SIM card draw-in groove is powered to described NFC smart card by described second source input when NFC smart card inserts;
Power management chip, comprises the first power output end, second source output and controls voltage output end;
Described the first power output end is connected with described the first power input, to provide the first supply power voltage to described the first SIM card draw-in groove when described mobile phone is normally worked, and when described mobile phone shutdown, stop providing described the first supply power voltage to described the first SIM card draw-in groove;
Described second source output is connected with described second source input, to provide the first supply power voltage to described the second SIM card draw-in groove when described mobile phone is normally worked, and when described mobile phone shutdown, stop providing described the first supply power voltage to described the second SIM card draw-in groove;
Described control voltage output end is exported and is controlled voltage when described mobile phone is normally worked, and stops exporting described control voltage when described mobile phone shutdown;
NFC control chip, during near card reader, produces enable voltage at described mobile phone;
Low pressure difference linear voltage regulator is exported the second supply power voltage under the control of described enable voltage;
Controlled switch, comprise the first controlled switch and the second controlled switch, the first end of the first end of described the first controlled switch and described the second controlled switch is connected with described low pressure difference linear voltage regulator, to obtain described the second supply power voltage, the 3rd end of described the first controlled switch is connected with described the first power input, the 3rd end of described the second controlled switch is connected with described second source input, the second end of described the first controlled switch is connected with described control voltage output end with the second end of described the second controlled switch, the second end of described the first controlled switch is when getting described control voltage, disconnect described first end and described the 3rd end of described the first controlled switch, when not getting described control voltage, the described first end and described the 3rd end that connect described the first controlled switch, the second end of described the second controlled switch is when getting described control voltage, disconnect described first end and described the 3rd end of described the second controlled switch, when not getting described control voltage, the described first end and described the 3rd end that connect described the second controlled switch.
2. mobile phone according to claim 1, it is characterized in that, described the first controlled switch comprises a P type metal-oxide-semiconductor and the 2nd P type metal-oxide-semiconductor, the grid of a described P type metal-oxide-semiconductor connects the grid of described the 2nd P type metal-oxide-semiconductor, the source electrode of a described P type metal-oxide-semiconductor connects the source electrode of described the 2nd P type metal-oxide-semiconductor, the drain electrode of a described P type metal-oxide-semiconductor is the first end of described the first controlled switch, the tie point of the grid of the grid of a described P type metal-oxide-semiconductor and described the 2nd P type metal-oxide-semiconductor is as the second end of described the first controlled switch, the drain electrode of described the 2nd P type metal-oxide-semiconductor is the 3rd end of described the first controlled switch.
3. mobile phone according to claim 1, it is characterized in that, described the second controlled switch comprises the 3rd P type metal-oxide-semiconductor and the 4th P type metal-oxide-semiconductor, the grid of described the 3rd P type metal-oxide-semiconductor connects the grid of described the 4th P type metal-oxide-semiconductor, the source electrode of described the 3rd P type metal-oxide-semiconductor connects the source electrode of described the 4th P type metal-oxide-semiconductor, the drain electrode of described the 3rd P type metal-oxide-semiconductor is the first end of described the second controlled switch, the tie point of the grid of the grid of described the 3rd P type metal-oxide-semiconductor and described the 4th P type metal-oxide-semiconductor is as the second end of described the second controlled switch, the drain electrode of described the 4th P type metal-oxide-semiconductor is the 3rd end of described the second controlled switch.
4. mobile phone according to claim 1, is characterized in that, described mobile phone further comprises the first resistance, and the first end of described the first resistance is connected with described control voltage output end, and the second end of described the first resistance is connected with the second end of described controlled switch.
5. mobile phone according to claim 1, is characterized in that, described mobile phone further comprises the second resistance, and the first end of described the second resistance is connected with described control voltage output end, the second end ground connection of described the second resistance.
6. mobile phone according to claim 1, it is characterized in that, described mobile phone further comprises battery, and described battery is connected with described power management chip and described low pressure difference linear voltage regulator respectively, to power to described power management chip and described low pressure difference linear voltage regulator simultaneously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110142957.6A CN102209129B (en) | 2011-05-30 | 2011-05-30 | Mobile phone |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110142957.6A CN102209129B (en) | 2011-05-30 | 2011-05-30 | Mobile phone |
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| CN102209129A CN102209129A (en) | 2011-10-05 |
| CN102209129B true CN102209129B (en) | 2014-04-02 |
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| CN201110142957.6A Expired - Fee Related CN102209129B (en) | 2011-05-30 | 2011-05-30 | Mobile phone |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9414309B2 (en) | 2012-11-16 | 2016-08-09 | Intel Deutschland Gmbh | Mobile terminal |
| CN104242995B (en) * | 2013-06-07 | 2018-04-27 | 中兴通讯股份有限公司 | Communication processing method and device, the mobile terminal of information memory card |
| CN105704704A (en) * | 2014-11-24 | 2016-06-22 | 中兴通讯股份有限公司 | Method and mobile terminal for realizing locking of user identification card |
| CN106327676B (en) * | 2015-06-30 | 2019-12-24 | 华为终端有限公司 | Mobile terminal |
| WO2018218662A1 (en) * | 2017-06-02 | 2018-12-06 | 华为技术有限公司 | Nfc service processing method, and terminal and nfc chip |
| CN107315609B (en) * | 2017-06-22 | 2020-09-08 | 北京小米移动软件有限公司 | Switching method and device of card simulation function |
| CN109297633B (en) * | 2018-09-29 | 2021-04-06 | 宁波中车时代传感技术有限公司 | Pressure transmitter for monitoring pressure of cooling water system of diesel locomotive |
| FR3087064B1 (en) * | 2018-10-09 | 2020-11-20 | Stmicroelectronics Razvoj Polprevodnikov D O O | CUT-OFF POWER SOURCE OF A NEAR FIELD COMMUNICATION TYPE READER |
| CN111964687A (en) * | 2020-08-19 | 2020-11-20 | 昆明学院 | Device capable of recording step under low electric quantity state |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100541526C (en) * | 2007-11-16 | 2009-09-16 | 上海复旦微电子股份有限公司 | Near-field communications terminal supply unit and method |
| US8131234B2 (en) * | 2009-07-23 | 2012-03-06 | Panasonic Corporation | Transmitter utilizing a duty cycle envelope reduction and restoration modulator |
| CN101977265B (en) * | 2010-10-19 | 2014-01-22 | 惠州Tcl移动通信有限公司 | Method for viewing time in off state of mobile phone and mobile phone thereof |
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Granted publication date: 20140402 |