CN102202119B - Cellphone - Google Patents
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- CN102202119B CN102202119B CN201110142986.2A CN201110142986A CN102202119B CN 102202119 B CN102202119 B CN 102202119B CN 201110142986 A CN201110142986 A CN 201110142986A CN 102202119 B CN102202119 B CN 102202119B
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- controlled switch
- oxide
- semiconductor
- type metal
- sim card
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Abstract
The invention discloses a cellphone, comprising a first SIM card channel section, a second SIM card channel section and an NFC control chip, wherein the first SIM card channel section is provided with a first data coupling end which is connected with the data transmission pin of a NFC intelligent card when the NFC intelligent card is inserted into the first SIM card channel section, the second SIM card channel section is provided with a second data coupling end which is connected with the data transmission pin of the NFC intelligent card when the NFC intelligent card is inserted into the second SIM card channel section, the NFC control chip comprises a third data coupling end which is respectively connected to the first data coupling end and the second data coupling end, data transmission is carried out between the NFC control chip and the NFC intelligent card through the third data coupling end and the data transmission pin when the NFC card is inserted into either one of the first SIM card channel section and the second SIM card channel section. According to the technical scheme, normal work of the NFC intelligent card is guaranteed when the NFC intelligent card is inserted into either one of the first SIM card channel section and the second SIM card channel section of the cellphone.
Description
Technical field
The present invention relates to mobile phone near field communication (NFC) field, particularly relate to a kind of mobile phone.
Background technology
NFC(Near Field Communication, near field communication (NFC)) more and more popularize in the middle of people's daily life, the user utilizes NFC to carry out quickly and easily in-plant wireless telecommunications, is generally used for the E-Payment of small amount, for example mass transit card.Mobile phone is integrated in the NFC function on mobile phone as the daily communication tool of carrying of people, can promote widely the user and experience the function of using NFC.
The NFC functional mobile phone of prior art is provided with the double SIM card draw-in groove, SIM card draw-in groove and SIM card and NFC smart card dimensional fits, can accommodating SIM card and NFC smart card, when inserting SIM card and NFC smart card to corresponding SIM card draw-in groove, both can utilize SIM card to carry out telephone communication and encrypt (or deciphering), can utilize again the NFC smart card to make snap gauge and intend, read data in the NFC smart card to utilize the NFC chip.
And in the prior art, tend in the double SIM card draw-in groove, a SIM card draw-in groove is set corresponding to SIM card, and another one SIM card draw-in groove is set corresponding to the NFC smart card, and in the user is inserted into the NFC smart card corresponding to the SIM card draw-in groove of SIM card because of carelessness the time, mobile phone can not be identified this NFC smart card, thereby cause user's use inconvenience.
Therefore, needing badly provides a kind of mobile phone, the problem of NFC smart card cisco unity malfunction in the NFC smart card is inserted in the double SIM card draw-in groove corresponding to the draw-in groove of SIM card time the with the NFC functional mobile phone that solves prior art.
Summary of the invention
The technical problem that the present invention mainly solves is to provide a kind of mobile phone, to solve the problems of the technologies described above.
for solving the problems of the technologies described above, the technical scheme that the present invention adopts is: a kind of mobile phone is provided, comprise: the first SIM card draw-in groove, the first SIM card draw-in groove arranges the first data link and the first power input, when the NFC smart card inserted the first SIM card draw-in groove, the first data link was connected with the transfer of data pin of NFC smart card, the second SIM card draw-in groove, the second SIM card draw-in groove is provided with the second data link and second source input, and when the NFC smart card inserted the second SIM card draw-in groove, the second data link was connected with the transfer of data pin of NFC smart card, the NFC control chip, comprise the 3rd data link, the 3rd data link respectively with the first data link be connected the data link and be connected, when the NFC smart card inserted any one in the first SIM card draw-in groove and the second SIM card draw-in groove, the NFC control chip carried out transfer of data by the 3rd data link and transfer of data pin and NFC smart card, power management chip, power management chip comprises: the first power output end, the first power output end is connected with the first power input, provides the first supply power voltage to the first SIM card draw-in groove when mobile phone works, and stops providing the first supply power voltage to the SIM card draw-in groove when mobile phone shutdown, the second source output, the second source output is connected with the second source input, provides the first supply power voltage to the second SIM card draw-in groove when mobile phone works, and stops providing the first supply power voltage to the second SIM card draw-in groove when mobile phone shutdown, control voltage output end, power management chip is exported when mobile phone works and is controlled voltage, and stops output control voltage when mobile phone shutdown, low pressure difference linear voltage regulator is used for output the second supply power voltage, the first controlled switch and the second controlled switch, the first end of the first controlled switch be connected the first end of controlled switch and be connected with low pressure difference linear voltage regulator, to obtain the second supply power voltage, the second end of the first controlled switch is connected with the first power input, the second end of the second controlled switch is connected with the second source input, the 3rd end of the first controlled switch be connected controlled switch the 3rd end with control voltage output end and be connected, the 3rd end of the first controlled switch is when getting control voltage, disconnect the first end of the first controlled switch and the second end of the first controlled switch, when not getting control voltage, connect the first end of the first controlled switch and the second end of the first controlled switch, the 3rd end of the second controlled switch is when getting control voltage, disconnect the first end of the second controlled switch and the second end of the second controlled switch, when not getting control voltage, connect the first end of the second controlled switch and the second end of the second controlled switch.
Wherein, mobile phone further comprises battery, and battery is connected with power management chip and low pressure difference linear voltage regulator respectively, to power to power management chip and low pressure difference linear voltage regulator simultaneously.
Wherein, the first controlled switch comprises a P type metal-oxide-semiconductor and the 2nd P type metal-oxide-semiconductor, the grid of the one P type metal-oxide-semiconductor connects the grid of the 2nd P type metal-oxide-semiconductor, the source electrode of the one P type metal-oxide-semiconductor connects the source electrode of the 2nd P type metal-oxide-semiconductor, the drain electrode of the one P type metal-oxide-semiconductor is the first end of the first controlled switch, the tie point of the grid of the grid of the one P type metal-oxide-semiconductor and the 2nd P type metal-oxide-semiconductor is as the 3rd end of the first controlled switch, and the drain electrode of the 2nd P type metal-oxide-semiconductor is the second end of the first controlled switch.
Wherein, the second controlled switch comprises the 3rd P type metal-oxide-semiconductor and the 4th P type metal-oxide-semiconductor, the grid of the 3rd P type metal-oxide-semiconductor connects the grid of the 4th P type metal-oxide-semiconductor, the source electrode of the 3rd P type metal-oxide-semiconductor connects the source electrode of the 4th P type metal-oxide-semiconductor, the drain electrode of the 3rd P type metal-oxide-semiconductor is the first end of the second controlled switch, the tie point of the grid of the grid of the 3rd P type metal-oxide-semiconductor and the 4th P type metal-oxide-semiconductor is as the 3rd end of the second controlled switch, and the drain electrode of the 4th P type metal-oxide-semiconductor is the second end of the second controlled switch.
Wherein, mobile phone further comprises the first resistance, the first end of the first resistance with control voltage output end and be connected, the second end of the first resistance and the 3rd end of the first controlled switch be connected the 3rd end of controlled switch and be connected.
Wherein, mobile phone further comprises the second resistance, and the first end of the second resistance is connected with the control voltage output end, the second end ground connection of the second resistance.
The invention has the beneficial effects as follows: be different from prior art, when mobile phone of the present invention inserts the first SIM card draw-in groove of mobile phone with any one in the second SIM card draw-in groove at the NFC smart card, can guarantee that all the NFC smart card works.
Description of drawings
Fig. 1 is the electrical block diagram of the preferred embodiment of mobile phone of the present invention.
Embodiment
At first see also Fig. 1, Fig. 1 is the electrical block diagram of the preferred embodiment of mobile phone of the present invention.As shown in Figure 1, the mobile phone 10 according to the embodiment of the present invention comprises the first SIM card draw-in groove 11, the second SIM card draw-in groove, the first controlled switch 13, the second controlled switch 14, power management chip 15, low pressure difference linear voltage regulator 16, NFC control chip 17, battery 18, the first resistance R 1, the second resistance R 2 and capacitor C 1.
Wherein, the first SIM card draw-in groove 11 is provided with the first data link 112, and when NFC smart card (not shown) was inserted the first SIM card draw-in groove, the first data link 112 was connected with the transfer of data pin of NFC smart card.The second SIM card draw-in groove 12 is provided with the second data link 122, and when the NFC smart card inserted the second SIM card draw-in groove 12, the second data link 122 was connected with the transfer of data pin of NFC smart card.
In the present embodiment, due to the 3rd data link 171 of NFC control chip 17 and the first data link 112 be connected data link 122 and be connected, therefore, when the NFC smart card is inserted into any one in the first SIM card draw-in groove 11 and the second SIM card draw-in groove 12, the 3rd equal data link 171 of NFC control chip all can be connected with the transfer of data pin of NFC smart card, thereby communicates with the NFC smart card.
In the present embodiment, the first SIM card draw-in groove 11 further is provided with the first power input 111, to power to the NFC smart card that is inserted into the first SIM card draw-in groove 11 by the first power input 111 when NFC smart card (not shown) is inserted the first SIM card draw-in groove 11.The second SIM card draw-in groove 12 arranges further second source input 121, to power to the NFC smart card that is inserted into the second SIM card draw-in groove 12 by second source input 121 when NFC smart card (not shown) is inserted the second SIM card draw-in groove 12.
And power management chip 15 comprises the first power output end 151, second source output 152, controls voltage output end 153 and power input 154.The first power output end 151 is connected with the first power input 111, providing the first supply power voltage to the first SIM card draw-in groove 11 when mobile phone 10 normal operation, and stops providing the first supply power voltage to the first SIM card draw-in groove 11 when mobile phone 10 shutdown.Second source output 152 is connected with second source input 121, providing the first supply power voltage to the second SIM card draw-in groove 12 when mobile phone 10 normal operation, and stops providing the first supply power voltage to the second SIM card draw-in groove 12 when mobile phone 10 shutdown.Control voltage output end 153 output when mobile phone 10 works and control power supply, and stop output control voltage when mobile phone 10 shutdown.
Low pressure difference linear voltage regulator 16(Low Dropout Regulator, LDO) be used for providing the second supply power voltage, it comprises IN port, EN port, OUT port and grounding ports, the grounding ports ground connection of low pressure difference linear voltage regulator 16.In the present embodiment, the maximum voltage value of the second supply power voltage of the OUT port of low pressure difference linear voltage regulator 16 output is preferably 1.8V.
And, being provided with battery 18 in mobile phone 10, battery 18 is connected with the power input 154 of power management chip 15 and the IN port of low pressure difference linear voltage regulator 16 respectively, to power to power management chip 15 and low pressure difference linear voltage regulator 16 simultaneously.In the present embodiment, the minimum voltage that battery 18 provides for power management chip 15 is the minimum shutdown voltage that mobile phone 10 is set, and the minimum voltage of powering for low pressure difference linear voltage regulator 16 is 2.6V.
Therefore, when mobile phone 10 close card reader, NFC control chip 17 obtains the voltage of 2.5V from the VDHF port, and produces the enable voltage of 1.8V to the EN port of low pressure difference linear voltage regulator 16, makes low pressure difference linear voltage regulator 16 from OUT port output the second supply power voltage.
And please further referring to Fig. 1, the first controlled switch 13 comprises first end 131, the second end 132 and the 3rd end 133.The second controlled switch 14 comprises first end 141, the second end 142 and the 3rd end 143.Wherein, the first end 131 of the first controlled switch 13 be connected the OUT end of first end 141 and low pressure difference linear voltage regulator 16 of controlled switch 14 and be connected to obtain the second supply power voltage.The 3rd end 133 of the first controlled switch 13 be connected controlled switch 14 the 3rd end 143 with control voltage output end 153 and be connected.The second end 132 of the first controlled switch 13 is connected with the first power input 111, and the second end 142 of the second controlled switch 14 is connected with second source input 121.
wherein, when mobile phone 10 normal operation, the 3rd end 133 of the first controlled switch 13 and the 3rd end 143 of the second controlled switch 14 obtain control voltage from controlling voltage output end 153, the second end 132 of the first end 131 of the first controlled switch 13 and the first controlled switch disconnects, the second end 142 of the first end 141 of the second controlled switch 14 and the second controlled switch disconnects, at this moment, the first SIM card draw-in groove 11 obtains the first supply power voltage by the first power input 111 and the first power output end 151 from power management chip 15, the second SIM card draw-in groove 12 crosses second source input 121 and the first power output end 152 obtains the first supply power voltage from power management chip 15.
And when mobile phone 10 is in off-mode, power management chip 15 quits work, and stops output control voltage and the first supply power voltage, when mobile phone 10 close card reader, low pressure difference linear voltage regulator 16 obtains enable signal, provides the second supply power voltage by the OUT port.The 3rd end 133 of the first controlled switch 13 and the 3rd end 143 of the second controlled switch 14 stop obtaining control voltage from controlling voltage output end 153, at this moment, the second end 132 of the first end 131 of the first controlled switch 13 and the first controlled switch 13 links together, therefore, second end 132 and the first end 131 of first controlled switch 13 of the first SIM card draw-in groove 11 by the first power input 111, the first controlled switch 13 obtains the second supply power voltage from the OUT end of low pressure difference linear voltage regulator 16.In like manner, second end 142 and the first end 141 of second controlled switch 14 of the second SIM card draw-in groove 12 by second source input 121, the second controlled switch 14 obtains the second supply power voltage from the OUT end of low pressure difference linear voltage regulator 16.
therefore, no matter work at mobile phone 10, or be that mobile phone 10 is in off-mode, as long as mobile phone 10 is near card reader, the first SIM card draw-in groove 11 and the second SIM card draw-in groove 12 all can obtain stable power supply input, and, due to the 3rd data link 171 of NFC control chip 17 and the first data link 112 be connected data link 122 and be connected, therefore, when the NFC smart card is inserted into any one in the first SIM card draw-in groove 11 and the second SIM card draw-in groove 12, the 3rd data link 171 of NFC control chip all can be connected with the transfer of data pin of NFC smart card, thereby realize no matter mobile phone 10 is under normal operation or off-mode, the NFC control chip all can communicate with the NFC smart card, all can realize snap gauge plan function to guarantee mobile phone 10 under any state.
Please further referring to Fig. 1, in a preferred embodiment of the invention, mobile phone 10 further is provided with the first resistance R 1 and the second resistance R 2, the first end 191 of the first resistance R 1 is connected with control voltage output end 153, the second end 192 of the first resistance R 1 and the 3rd end 133 of the first controlled switch 13 be connected the 3rd end 143 of controlled switch 14 and be connected, the first end 193 of the second resistance R 2 is connected with control voltage output end 153, the second end 194 ground connection of the second resistance R 2.The first resistance R 1 can play the effect of current-limiting protection, and the resistance value of the second resistance R 2 is set to the Ω greater than 100k, can avoid controlling voltage output end 15 leakage currents excessive.
It should be noted that the first controlled switch 13 and the second controlled switch 14 can be realized by various controlled switch modules in prior art, as relay, analog switch etc.And the first controlled switch 13 and the second controlled switch 14 can be composed in series by two metal-oxide-semiconductor reversal connections in a preferred embodiment of the invention.
Wherein, the first controlled switch 13 comprises a P type metal-oxide-semiconductor M1 and the 2nd P type metal-oxide-semiconductor M2.The grid of the one P type metal-oxide-semiconductor M1 connects the grid of the 2nd P type metal-oxide-semiconductor M2, and the source electrode of a P type metal-oxide-semiconductor M1 connects the source electrode of the 2nd P type metal-oxide-semiconductor M2.The drain electrode of the one P type metal-oxide-semiconductor M1 is the first end 131 of the first controlled switch 13, the tie point of the grid of the grid of the one P type metal-oxide-semiconductor M1 and the 2nd P type metal-oxide-semiconductor M2 is the second end 132 of the first controlled switch 13 as the drain electrode of the 3rd end 133, the two P type metal-oxide-semiconductor M2 of the first controlled switch 13.
The second controlled switch 14 comprises the 3rd P type metal-oxide-semiconductor M3 and the 4th P type metal-oxide-semiconductor M4, and the grid of the 3rd P type metal-oxide-semiconductor M3 connects the grid of the 4th P type metal-oxide-semiconductor M4, and the source electrode of the 3rd P type metal-oxide-semiconductor M3 connects the source electrode of the 4th P type metal-oxide-semiconductor M4.The drain electrode of the 3rd P type metal-oxide-semiconductor M3 is the first end 141 of the second controlled switch 14, the tie point of the grid of the grid of the 3rd P type metal-oxide-semiconductor M3 and the 4th P type metal-oxide-semiconductor M4 is the second end 142 of the second controlled switch 14 as the drain electrode of the 3rd end 143, the four P type metal-oxide-semiconductor M4 of the second controlled switch 14.
Wherein, the operation principle of the first controlled switch 13 is as follows: can equivalence be a parasitic diode D1 between the drain electrode of a P type metal-oxide-semiconductor M1 and source electrode, therefore, control voltage in the situation that no matter whether the grid of a P type metal-oxide-semiconductor M1 get, if the OUT of low pressure difference linear voltage regulator 16 end output the second operating voltage, the source electrode that this second operating voltage all can transfer to the 2nd P type metal-oxide-semiconductor M2 by drain electrode and the source electrode of a P type metal-oxide-semiconductor M1.therefore, source voltage at the 2nd P type metal-oxide-semiconductor M2 is under the prerequisite of the second operating voltage, as long as the grid voltage of the 2nd P type metal-oxide-semiconductor M2 is less than the second operating voltage, the difference that namely satisfies grid level and source voltage is during less than 0V, just can be so that the drain electrode of the 2nd P type metal-oxide-semiconductor and source electrode conducting, control voltage therefore stop output at power management chip, make the grid voltage of the 2nd P type metal-oxide-semiconductor M2 can not obtain when controlling voltage, the grid voltage of the 2nd P type metal-oxide-semiconductor M2 is 0V, at this moment, the drain electrode of the 2nd P type metal-oxide-semiconductor and source electrode conducting, make exportable the second operating voltage to the first SIM card card slot of drain electrode and the second SIM card draw-in groove of the 2nd P type metal-oxide-semiconductor M2.
Similarly, the operation principle of the second controlled switch 14 is consistent with the first controlled switch 13, repeats no more in this.
Because above-mentioned two metal-oxide-semiconductors have lower conducting resistance, it is generally 0.2 ohm of left and right, is fit to very much the NFC smart card to the requirement of power supply, therefore, in a preferred embodiment of the invention, preferably adopts above-mentioned two metal-oxide-semiconductors as controlled switch.
it should be noted that, in the present embodiment, adopted the technical scheme of two controlled switchs (i.e. the first controlled switch 13 and the second controlled switch 14) and two SIM card draw-in grooves (i.e. the first SIM card draw-in groove 11 and the second SIM card draw-in groove 12) to make elaboration, but, in other embodiments of the invention, as long as the performance of low pressure difference linear voltage regulator 16 and power management chip 15 allows, plural controlled switch and SIM card draw-in groove also can be set, the present invention does not do concrete restriction to its quantity, those skilled in the art all can make respective extension after understanding inventive concept.
Therefore, by the above technical scheme of introducing, the invention provides a kind of mobile phone, when it inserts the first SIM card draw-in groove of mobile phone with any one in the second SIM card draw-in groove at the NFC smart card, can guarantee that all the NFC smart card works.
These are only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in scope of patent protection of the present invention.
Claims (6)
1. a mobile phone, is characterized in that, comprising:
The first SIM card draw-in groove, described the first SIM card draw-in groove is provided with the first data link and the first power input, and when the NFC smart card inserted described the first SIM card draw-in groove, described the first data link was connected with the transfer of data pin of described NFC smart card;
The second SIM card draw-in groove, described the second SIM card draw-in groove is provided with the second data link and second source input, when described NFC smart card inserted described the second SIM card draw-in groove, described the second data link was connected with the transfer of data pin of described NFC smart card;
The NFC control chip, comprise the 3rd data link, described the 3rd data link respectively with described the first data link be connected the second data link and be connected, when described NFC smart card was inserted into any one in described the first SIM card draw-in groove and described the second SIM card draw-in groove, described NFC control chip carried out transfer of data by described the 3rd data link and described transfer of data pin and described NFC smart card;
Power management chip, described power management chip comprises:
The first power output end, described the first power output end is connected with described the first power input, provide the first supply power voltage to described the first SIM card draw-in groove when described mobile phone normal operation, and stop providing described the first supply power voltage to described SIM card draw-in groove when described mobile phone shutdown;
The second source output, described second source output is connected with described second source input, provide described the first supply power voltage to described the second SIM card draw-in groove when described mobile phone normal operation, and stop providing described the first supply power voltage to described the second SIM card draw-in groove when described mobile phone shutdown;
Control voltage output end, voltage is controlled in the output when described mobile phone normal operation of described power management chip, and stops exporting described control voltage when described mobile phone shutdown;
Low pressure difference linear voltage regulator is used for output the second supply power voltage;
the first controlled switch and the second controlled switch, the first end of described the first controlled switch be connected the first end of the second controlled switch and be connected with described low pressure difference linear voltage regulator, to obtain described the second supply power voltage, the second end of described the first controlled switch is connected with described the first power input, the second end of described the second controlled switch is connected with the second source input, the 3rd end of described the first controlled switch be connected the 3rd end of the second controlled switch and be connected with described control voltage output end, the 3rd end of described the first controlled switch is when getting described control voltage, disconnect the first end of described the first controlled switch and the second end of described the first controlled switch, when not getting described control voltage, connect the first end of described the first controlled switch and the second end of described the first controlled switch, the 3rd end of described the second controlled switch is when getting described control voltage, disconnect the first end of described the second controlled switch and the second end of described the second controlled switch, when not getting described control voltage, connect the first end of described the second controlled switch and the second end of described the second controlled switch.
2. mobile phone according to claim 1, it is characterized in that, described mobile phone further comprises battery, and described battery is connected with described power management chip and described low pressure difference linear voltage regulator respectively, to power to described power management chip and described low pressure difference linear voltage regulator simultaneously.
3. mobile phone according to claim 1, it is characterized in that, described the first controlled switch comprises a P type metal-oxide-semiconductor and the 2nd P type metal-oxide-semiconductor, the grid of a described P type metal-oxide-semiconductor connects the grid of described the 2nd P type metal-oxide-semiconductor, the source electrode of a described P type metal-oxide-semiconductor connects the source electrode of described the 2nd P type metal-oxide-semiconductor, the drain electrode of a described P type metal-oxide-semiconductor is the first end of described the first controlled switch, the tie point of the grid of the grid of a described P type metal-oxide-semiconductor and described the 2nd P type metal-oxide-semiconductor is as the 3rd end of described the first controlled switch, the drain electrode of described the 2nd P type metal-oxide-semiconductor is the second end of described the first controlled switch.
4. mobile phone according to claim 3, it is characterized in that, described the second controlled switch comprises the 3rd P type metal-oxide-semiconductor and the 4th P type metal-oxide-semiconductor, the grid of described the 3rd P type metal-oxide-semiconductor connects the grid of described the 4th P type metal-oxide-semiconductor, the source electrode of described the 3rd P type metal-oxide-semiconductor connects the source electrode of described the 4th P type metal-oxide-semiconductor, the drain electrode of described the 3rd P type metal-oxide-semiconductor is the first end of described the second controlled switch, the tie point of the grid of the grid of described the 3rd P type metal-oxide-semiconductor and described the 4th P type metal-oxide-semiconductor is as the 3rd end of described the second controlled switch, the drain electrode of described the 4th P type metal-oxide-semiconductor is the second end of described the second controlled switch.
5. mobile phone according to claim 1, it is characterized in that, described mobile phone further comprises the first resistance, the first end of described the first resistance is connected with described control voltage output end, the second end of described the first resistance and the 3rd end of described the first controlled switch be connected the 3rd end of the second controlled switch and be connected.
6. mobile phone according to claim 5, is characterized in that, described mobile phone further comprises the second resistance, and the first end of described the second resistance is connected with described control voltage output end, the second end ground connection of described the second resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110142986.2A CN102202119B (en) | 2011-05-30 | 2011-05-30 | Cellphone |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110142986.2A CN102202119B (en) | 2011-05-30 | 2011-05-30 | Cellphone |
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| CN102202119A CN102202119A (en) | 2011-09-28 |
| CN102202119B true CN102202119B (en) | 2013-11-06 |
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| CN201110142986.2A Expired - Fee Related CN102202119B (en) | 2011-05-30 | 2011-05-30 | Cellphone |
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| CN106507338B (en) * | 2016-10-26 | 2019-04-12 | 维沃移动通信有限公司 | A kind of control method of mobile terminal and mobile terminal |
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| CN100541526C (en) * | 2007-11-16 | 2009-09-16 | 上海复旦微电子股份有限公司 | Near-field communications terminal supply unit and method |
| CN100580613C (en) * | 2008-01-30 | 2010-01-13 | 上海华虹集成电路有限责任公司 | Connection and communicating method between NFC control chip and SIM card chip |
| CN101515814A (en) * | 2009-03-18 | 2009-08-26 | 中兴通讯股份有限公司 | Enhanced near field communication device and realization method thereof |
| CN101729676B (en) * | 2009-12-29 | 2013-06-05 | 中兴通讯股份有限公司 | Mobile phone with near field communication function |
| CN102033828B (en) * | 2010-11-24 | 2015-06-03 | 中兴通讯股份有限公司 | Method and system for accessing external card |
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Effective date of registration: 20210106 Address after: 221000 Heqiao town government, Tongshan District, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Letu e-commerce Co.,Ltd. Address before: 510000 No. 106 Fengze East Road, Nansha District, Guangzhou City, Guangdong Province Patentee before: Guangzhou shengxia Intellectual Property Operation Co.,Ltd. Effective date of registration: 20210106 Address after: 510000 No. 106 Fengze East Road, Nansha District, Guangzhou City, Guangdong Province Patentee after: Guangzhou shengxia Intellectual Property Operation Co.,Ltd. Address before: 516006 Guangdong province Huizhou Zhongkai hi tech Development Zone No. 23 District Patentee before: HUIZHOU TCL MOBILE COMMUNICATION Co.,Ltd. |
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Granted publication date: 20131106 Termination date: 20210530 |