CN102684652A - Synchronous pulse control circuit for preventing faults of microprogrammed control unit (MCU) or driving integrated circuit (IC) - Google Patents
Synchronous pulse control circuit for preventing faults of microprogrammed control unit (MCU) or driving integrated circuit (IC) Download PDFInfo
- Publication number
- CN102684652A CN102684652A CN2012101806961A CN201210180696A CN102684652A CN 102684652 A CN102684652 A CN 102684652A CN 2012101806961 A CN2012101806961 A CN 2012101806961A CN 201210180696 A CN201210180696 A CN 201210180696A CN 102684652 A CN102684652 A CN 102684652A
- Authority
- CN
- China
- Prior art keywords
- circuit
- control
- mcu
- pulse
- lock
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a synchronous pulse control circuit for preventing faults of a microprogrammed control unit (MCU) or a driving integrated circuit (IC). The circuit comprises a signal sampling circuit, a synchronous pulse conversion circuit and a rectifying control signal output circuit. The synchronous pulse control circuit is characterized in that the sampling circuit conducts sampling and amplitude adjustment on output voltage signals of the MCU or the driving IC and outputs sampling voltage signals to the synchronous pulse conversion circuit. The synchronous pulse conversion circuit couples normal pulse sampling voltage signals controlled by duty ratio at the input end of the rectifying control signal output circuit and simultaneously stops direct current fault voltage signals. The rectifying control signals output circuit clamps the control end of a complementary push-pull type power amplification circuit of a main driving circuit at the zero potential when faults occur. The synchronous pulse control circuit technically has the advantages of being good in following performance, high in reliability and low in cost.
Description
Technical field
The present invention relates to impulse transfer control field, is the lock-out pulse control circuit of a kind of anti-MCU or drive IC fault specifically.
Background technology
Present traditional electronic type power switch; (MCU or drive IC) is when breaking down in the pulsed drive source; The drive pulse signal width then can receive the influence of input stage (prime) to reach maximum; Be the mode of operation of the full conducting of high level, this will make back level power switch pipe be in full duty ratio conduction mode, damage this power switch pipe because of electric current is excessive.
Shown in Figure 1 is that the complementary push-pull formula power driving circuit of input is amplified in traditional band triode paraphase.(U when the MCU of prime or drive IC break down
0Be full low level; Normal is the controllable drive signal of pulse duration); In this traditional circuit, this fault can cause power switch pipe to get into fully conducting state after triode and complementary push-pull amplifier carry out dual amplification; Conducting internal resistance between its D-S is close to zero especially, causes this power switch pipe to damage because of electric current is excessive.
Shown in Figure 2 is the complementary push-pull formula power driving circuit of Traditional use discharge resistance.As stated, when the MCU of prime or drive IC break down,, can cause terminal power switch pipe to damage equally because of electric current is excessive through this complementary push-pull circuit and driving resistor.
Fig. 3, shown in Figure 4 be the complementary push-pull formula power driving circuit of Traditional use operational amplifier/comparator homophase input.Different is with Fig. 1, Fig. 2, (output voltage U when the MCU of prime or drive IC break down
0Being the overall height level, normally is the controllable drive signal of pulse duration), this fault high level is delivered to the driving stage of power switch pipe through in-phase input end, thereby terminal power switch pipe is damaged because of electric current is excessive.
Address the above problem the following three kinds of methods that mainly contain at present:
Method one
The power switch pipe D utmost point (or C utmost point) is endways gone up high-power current-limiting resistance R9 of series connection; Like Fig. 5, shown in Figure 6; This current-limiting resistance owing to connected; Can prevent that power switch pipe from getting into short-circuit condition when the MCU fault, thereby well its electric current remained in the safety value of power switch pipe.But this scheme is connected in the major loop owing to increased fixing high-power resistance load, has increased the power loss of major loop to a certain extent; Therefore greatly reduce the operating efficiency of complete machine; And the resistance of this resistance is selected the corresponding increase of difficulty meeting, simultaneously with the increase of power; The heating of resistance itself and volume also are the problems that must consider.
Method two
The output of MCU or drive IC external operational amplifier or comparator; Overall height level or complete low level problem possibly appear when breaking down according to prime; Can adopt like Fig. 7, the scheme shown in Figure 8 (protective circuit shown in the overall height level map interlinking 7; Protective circuit shown in the full low level map interlinking 8), make triode Q through the output of operational amplifier or comparator
5Conducting smoothly; Can overall height or complete low power switch pipe fault drive signal directly be drawn ground; This fault-signal is pulled down near zero level by force, thereby makes terminal power switch pipe be in cut-off state because of no drive level, and this moment, its D-S was equivalent to the disconnection of switch; Thereby the overall height level when having avoided this power switch pipe failover opens that electric current to occur excessive and cause damage, has played protective effect to a certain degree.But this scheme be because the height/low level during to the prime fault can only be carried out individual event selects, when MCU or drive IC break down, actually or just be difficult to confirm its output characteristic high level low level.So its service condition is restricted, and is unfavorable for really dealing with problems.
Method three
In traditional complementary push-pull formula drive circuit; Like Fig. 9, shown in Figure 10; The driving transformer of an isolation usefulness of serial connection; When prime MCU or drive IC broke down, the overall height of output or low full fault drive signal can't make terminal power switch pipe be in cut-off state because of no drive signal through driving transformer (transformer has the characteristic of logical high frequency resistance low frequency, logical interchange stopping direct current) because of acrotism momentum (D. C. value); Thereby can avoid the generation of the above overcurrent phenomenon, play protective effect to a certain degree.But this scheme rises and drives and the transformer of buffer action because of having increased by one, and (when drive circuit works during at the low frequency state, transformer is low because of frequency, according to the principle of induction reactance to make that the volume and weight in whole driving loop greatly increases<x
L=2 π fL>Can know that its volume and weight will be multiplied), the also corresponding certainly increase of cost, and can't confirm because of the frequency of drive signal, make the type selecting of transformer face actual difficulty equally.In brief, two practical problems of this of existence make the scope of application of this scheme be restricted, and we can say, this scheme also fails fundamentally to overcome the above problems.
Summary of the invention
The present invention will solve is that the control circuit of existing anti-MCU or drive IC the fault complex structure, the cost that exist are higher, volume is bigger; And a series of correlation technique problems such as technical feasibility difference provide a kind of clock circuit that can carry out sample-pulse signal conversion and control to the MCU or the drive IC fault of input stage.
Solving the problems of the technologies described above the technical scheme that is adopted is: the lock-out pulse control circuit of anti-MCU or drive IC fault, comprise signal sample circuit, lock-out pulse change-over circuit and shaping control signal output circuit, and it is characterized in that:
Described sample circuit is sampled and the amplitude adjustment to the output voltage signal of MCU or drive IC, and output sampled voltage signal is given the lock-out pulse change-over circuit;
The normal burst sampled voltage signal that described lock-out pulse change-over circuit will have duty ratio control is coupled to the input of shaping control signal output circuit, blocks the direct current failure voltage signal simultaneously;
Described shaping control signal output circuit comprises shaping circuit, control circuit and a clamping diode; Described shaping circuit will be exported to control circuit after will having the normal burst sampling coupled voltages signal shaping of duty ratio control; Control circuit output high level, clamping diode ends; When the input of control circuit was low level, the control circuit output low level made the clamping diode conducting, and the control end that described clamping diode will be led the complementary push-pull formula power amplification circuit that drives the loop is clamped on zero potential.
The lock-out pulse control circuit of anti-MCU of the present invention or drive IC fault, when MCU or drive IC operate as normal, output has the normal burst voltage signal of duty ratio control.Described sample circuit is sampled and the amplitude adjustment to the output voltage signal of MCU or drive IC, and output sampled voltage signal is given the lock-out pulse change-over circuit; The normal burst sampled voltage signal that described lock-out pulse change-over circuit will have duty ratio control is coupled to the input of shaping control signal output circuit; After described shaping control signal output circuit will have the normal burst sampling coupled voltages signal shaping of duty ratio control, by control circuit output high level, clamping diode ended.At this moment, the lock-out pulse control circuit of anti-MCU of the present invention or drive IC fault can not exert an influence to the main complementary push-pull formula power amplification circuit that drives the loop.
When MCU or drive IC break down, output overall height level or full low level.When being output as the overall height level, sample circuit carries out phse conversion to the output voltage signal of MCU or drive IC.Therefore, no matter false voltage is overall height level or full low level, and the sampled voltage signal of exporting from sample circuit is low level.The lock-out pulse change-over circuit is blocked d. c. voltage signal, and its output also is a low level.Shaping control signal output circuit output low level makes the clamping diode conducting, and the control end that described clamping diode will be led the complementary push-pull formula power amplification circuit that drives the loop is clamped on zero potential.
The lock-out pulse control circuit of anti-MCU of the present invention or drive IC fault; Do not influencing overall efficiency; And do not influence under the prerequisite of complete machine performance; Operating state through to prime MCU or drive IC is carried out synchronous monitoring, prevents that final stage power switch pipe when prime breaks down from getting into the short-circuit condition of full duty ratio conducting, can make the drive signal of output be locked in the scope as safe as a house; Thereby solved the MCU or the drive IC fault that occur under the improper reason, the serious electrically problems such as aircraft bombing of having avoided this fault to cause produce.In addition, the present invention neither need adopt any isolation drive transformer, can be applicable to again in the drive circuit of various frequencies, and can carry out Synchronization Control to the height fault level of input.In one word, the invention of this circuit has three quantum jumps point technically: following property is good, good reliability, with low cost.
According to the present invention, described sample circuit is the pure resistance circuit, perhaps is operation amplifier circuit, comparator circuit, transistor circuit, MOSFET circuit or IGBT circuit any logic control pipe circuit wherein.
According to the present invention, described lock-out pulse change-over circuit comprises the pulse coupling capacitance.Described pulse coupling capacitance is electrochemical capacitor or polarity free capacitor, and quantity is one or more.Further, when the RC of lock-out pulse change-over circuit burst length constant greater than T
SDuring the sampled signal pulsewidth, positive pulse fly-wheel diode of described pulse coupling capacitance two ends parallel connection, negative pulse fly-wheel diode of series connection between the output of said pulse coupling capacitance and the ground, and the plus earth of described negative pulse fly-wheel diode.Described negative pulse fly-wheel diode and positive pulse fly-wheel diode can be blocked low-frequency voltage effectively and pass through.
According to the present invention, the shaping circuit of described shaping control signal output circuit is one or more levels RC integrating circuit.
According to the present invention, the control circuit of described shaping control signal output circuit is operation amplifier circuit or comparator circuit, perhaps is the combination of transistor circuit, MOSFET circuit or IGBT circuit any two/kind logic control pipe circuit wherein.The control circuit of this structure can guarantee that its input and output keep the same-phase state.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is described further.
Fig. 1, Fig. 2 are that traditional band triode is swung to the complementary push-pull formula drive circuit that amplifies input.
Fig. 3, Fig. 4 are the complementary push-pull formula drive circuits that traditional band operational amplifier/comparator is imported.
Fig. 5, Fig. 6 are the drive circuits that increases high-power current-limiting resistance endways in the power switch pipe major loop.
Fig. 7, Fig. 8 are the drive circuits that adopts single overall height/low full fault level detection or protection.
Fig. 9, Figure 10 are the complementary push-pull formula drive circuits that adopts the isolated driving transformer of string.
Figure 11, Figure 12, Figure 13, Figure 14 are the lock-out pulse control circuits that the present invention adopts the dual operational amplifier input and output.
Figure 15, Figure 16 are the lock-out pulse control circuits that the present invention adopts the tandem transistor input and output.
Figure 17, Figure 18 are that the present invention adopts single operational amplifier and the monocrystal triode lock-out pulse control circuit as input and output.
Embodiment
Embodiment one
Implementation of the present invention is just like shown in the control circuit in Figure 11 frame of broken lines.Lock-out pulse control circuit of the present invention comprises signal sample circuit, lock-out pulse change-over circuit and shaping control signal output circuit.
Described signal sample circuit is by operational amplifier OPAMP1 and the peripheral circuit be made up of resistance R 1, R2, R3 and R4.Wherein: the series circuit that divider resistance R2 and R3 constitute provides reference voltage for the input negative terminal of operational amplifier OPAMP1; The output of resistance R 1 one termination MCU or drive IC, the input anode of another termination operational amplifier OPAMP1; The output of one termination operational amplifier OPAMP1 of resistance R 4.
Described lock-out pulse change-over circuit comprises pulse coupling capacitance C1, pulse coupling capacitance C
1Left end connect the output (being the other end of resistance R 4) of pulse signal sampling, right-hand member connects the input of pulse shaper.Wherein pulse coupling capacitance C
1Also can use the electric capacity of other specifications to substitute (containing electrochemical capacitor and polarity free capacitor etc.).
Described shaping control signal output circuit comprises shaping circuit, control circuit and a clamping diode D3.Described shaping circuit is a two-stage RC integrating circuit that is made up of resistance R 5, capacitor C 2, resistance R 6 and capacitor C 3.Described control circuit comprises operational amplifier OPAMP2 and the peripheral circuit that is made up of resistance R 7, R8, R9 and R10, and wherein: the series circuit that divider resistance R9 and R10 constitute provides reference voltage for the input negative terminal of operational amplifier OPAMP2; The input anode of the termination operational amplifier OPAMP2 of resistance R 7 and R8, the other end of resistance R 7 and R8 is not connected to the two ends of the capacitor C 3 in the integrating circuit of the second level.The negative electrode of clamping diode D3 connects the output of operational amplifier OPAMP2, and anode connects the control end of complementary push-pull formula power amplification circuit.
When MCU or drive IC fault-free, in resistance R
1Left end the normal burst drive signal of band duty ratio control will appear, OPAMP1 takes a sample through operational amplifier, by pulse coupling capacitance C
1Be coupled to the input (electric capacity has logical high frequency resistance low frequency, the logical characteristic that exchanges stopping direct current, Xc=1/2 π fC) of pulse shaper, pass through resistance R again
5, capacitor C
2, resistance R
6, capacitor C
3The twin-stage integrating circuit of forming is delivered to the input of operational amplifier OPAMP1, so its output will obtain and MCU or the synchronous high level of drive IC, clamping diode D
3Instead end partially, this synchronization control circuit can not exert an influence to the driving main loop of operate as normal.When MCU or drive IC break down, resistance R
1On will detect a fault level (overall height level or full low level), carry out phase-detection through operational amplifier OPAMP1, deliver to pulse coupling capacitance C
1Left end, because of pulse coupling capacitance C
1The logical characteristic that exchanges stopping direct current is arranged, and overall height that prime is sent here or low full DC level can't be delivered to the back level.Simultaneously, pulse shaper is because of no input signal output low level, through operational amplifier OPAMP2 output low level, clamping diode D
3Conducting is pulled low to zero level with the input of the complementary push-pull power amplification circuit in the driving main loop, and the power switch pipe of final stage is in cut-off state because of no drive signal, thereby has played the Synchronization Control effect.
The present invention is not influencing under overall efficiency and the electrical prerequisite, and the final stage power switch pipe is because of the excessive problem of damaging of electric current thereupon when having solved prime MCU or drive IC and breaking down.In brief, it is good that this circuit has the property of following, good reliability, advantage such as with low cost.
On this basis, when the RC of lock-out pulse change-over circuit burst length constant greater than T
SDuring the sampled signal pulsewidth; Positive pulse sustained diode 1 of described pulse coupling capacitance C3 two ends parallel connection; Negative pulse sustained diode 2 of series connection between the output of said pulse coupling capacitance C1 and the ground, and the plus earth of described negative pulse sustained diode 2.Described negative pulse sustained diode 1 can be blocked low-frequency voltage effectively with positive pulse sustained diode 2 and pass through.
Embodiment two
With reference to Figure 12, present embodiment is the improvement on Figure 11 embodiment basis.Be that with Figure 11 embodiment difference described signal sample circuit is made up of resistance R 4, all the other structures are identical with Figure 11 embodiment.
Embodiment three
With reference to Figure 13, present embodiment is the improvement on Figure 11 embodiment basis.Be that with Figure 11 embodiment difference described shaping circuit adopts one-level RC integrating circuit, promptly constitute that all the other structures are identical with Figure 11 embodiment by resistance R 5 and capacitor C 2.
Embodiment four
With reference to Figure 14 present embodiment is the improvement on Figure 13 embodiment basis.Be that with Figure 13 embodiment difference described signal sample circuit is made up of resistance R 4, all the other structures are identical with Figure 13 embodiment.Embodiment five
With reference to Figure 15, another implementation of the present invention.In this execution mode, the main power switch pipe control end that drives the loop final stage adopts PNP triode discharge type.Lock-out pulse control circuit of the present invention comprises signal sample circuit, lock-out pulse change-over circuit and shaping control signal output circuit.
Described signal sample circuit comprises triode Q1 and the peripheral circuit of being made up of resistance R 1, R2, R3 and R4.The one termination MCU of said resistance R 1 or the output of drive IC, the base stage of another termination triode Q1; The collector electrode connecting resistance R2 of triode Q1 and the end of R4, another termination power VCC1 of resistance R 2.
Described lock-out pulse change-over circuit comprises pulse coupling capacitance C1, pulse coupling capacitance C
1Left end connect the output (being the other end of resistance R 3) of pulse signal sampling, right-hand member connects the input of pulse shaper.Wherein pulse coupling capacitance C
1Also can use the electric capacity of other specifications to substitute (containing electrochemical capacitor and polarity free capacitor etc.).When the RC of lock-out pulse change-over circuit burst length constant greater than T
SDuring the sampled signal pulsewidth; Positive pulse sustained diode 1 of described pulse coupling capacitance C3 two ends parallel connection; Negative pulse sustained diode 2 of series connection between the output of said pulse coupling capacitance C1 and the ground, and the plus earth of described negative pulse sustained diode 2.
Described shaping control signal output circuit comprises shaping circuit, control circuit and a clamping diode D3.Described shaping circuit is a two-stage RC integrating circuit that is made up of resistance R 5, capacitor C 2, resistance R 6 and capacitor C 3.Described control circuit comprises triode Q2, triode QA, resistance R 7, R8 and RA.The base stage connecting resistance R6 of triode Q2 and the end of R7, the other end of emitter connecting resistance R7, the emitter of triode QA and ground, the base stage of base stage connecting resistance R8 and triode QA; An end and the power supply VCC1 of the other end connecting resistance RA of resistance R 8; The other end of the collector electrode connecting resistance RA of triode QA and the negative electrode of clamping diode D3; The anode of clamping diode D3 connects the control end of complementary push-pull formula power amplification circuit.
When MCU or drive IC break down, in resistance R
1On will obtain an overall height or complete low DC level, through sampling triode Q
1After the paraphase, from its C utmost point output, because of pulse coupling capacitance C
1The logical characteristic that exchanges of stopping direct current is arranged, and this fault DC level can't be through pulse coupling capacitance C
1In addition because the positive pulse sustained diode
1Be in anti-state partially, the fault high level also can't be through the pulse sustained diode
1Be sent to the back level, make triode Q
2The forward voltage sent here because of the no pulse shaping circuit of the b utmost point be in cut-off state, triode Q
2C utmost point output high level, make control triode Q
AThe b utmost point present high level, triode Q
AConducting, its c is low level very, clamping diode D
3Conducting; The input of complementary push-pull power amplifier is pulled to approaches zero potential; Make the final stage power switch pipe be in off-state because of no driving voltage; Thereby played the lock-out pulse control action, protected late-class circuit to be unlikely to damage because of electric current is excessive, wherein the master power switch pipe of final stage also can use triode, MOSFET, IGBT device to replace.
Embodiment six
With reference to Figure 14, another embodiment of the invention.This execution mode is with the difference of the execution mode of Figure 15: one of which, and what the main power switch pipe control end that drives the loop final stage adopted is the conductive discharge form; Another place is the pulse shaper of synchronizing control loop, and Figure 15 has adopted two-stage RC integrating circuit, and present embodiment has adopted one-level RC integrating circuit, wherein relates to also available multistage replacement of RC integrating circuit of pulse converter.All the other structures are identical with the execution mode of Figure 15.
Embodiment seven
With reference to Figure 17, the another execution mode of the present invention after improving on Figure 15 execution mode basis.Be that with Figure 15 execution mode difference sample circuit is by operational amplifier OPAMP1 and the peripheral circuit be made up of resistance R 1, R2, R3 and R4.Wherein: the series circuit that divider resistance R2 and R3 constitute provides reference voltage for the input negative terminal of operational amplifier OPAMP1; The output of resistance R 1 one termination MCU or drive IC, the input anode of another termination operational amplifier OPAMP1; The output of one termination operational amplifier OPAMP1 of resistance R 4, the end of another termination pulse coupling capacitance C1.All the other structures are identical with Figure 15 execution mode.
The master control device of input sampling circuit in the lock-out pulse control circuit and output control circuit also can adopt triode, MOSTET pipe and operational amplifier (containing comparator) to substitute.
When MCU or drive IC were in proper working order, the pulse signal that receives duty ratio control was through resistance R
1Deliver to pulse coupling capacitance C with input sampling circuit
1Left end, because of pulse coupling capacitance C
1Logical high frequency resistance low frequency is arranged, the logical characteristic that exchanges stopping direct current, this pulse signal is through pulse coupling capacitance C
1Deliver to pulse shaper, the output high level makes clamping diode D
3Negative terminal present high level, clamping diode D
3End, inoperative to the main driving loop of operate as normal.When MCU or drive IC operation irregularity (fault), in resistance R
1On will obtain an overall height or complete low DC level, deliver at a distance from straight diode C through sampling triode (sampling operational amplifier or comparator)
1Left end, because of this fault sampled signal is overall height or complete low DC level, can't be through at a distance from straight diode C
1Be sent to back level, pulse shaper is exported the control valve output low level and is added to clamping diode D because of can't the input signal output low level
3Negative terminal, clamping diode D
3Be in the positively biased conducting state; Thereby the input that will lead the driving loop is pulled to and approaches zero potential; The final stage power switch pipe is in passive off-state because of no drive signal; Be equivalent to the disconnection of switch, played the lock-out pulse control action of anti-MCU or drive IC fault, reached the technical indicator that requires.
Embodiment eight
With reference to Figure 18, the present invention is improved another execution mode on Figure 17 basis.Be with Figure 17 execution mode difference: one of which; The power switch pipe control end that the master of Figure 17 drives the loop final stage adopts PNP triode discharge type, and the power switch pipe control end employing of the main driving loop final stage of this execution mode is the conductive discharge form; Another place is the pulse shaper of synchronizing control loop, and Figure 17 has adopted two-stage RC integrating circuit, and this execution mode has then adopted one-level RC integrating circuit, wherein relates to also available multistage replacement of RC integrating circuit of pulse converter.
What should be understood that is: the foregoing description is just to explanation of the present invention, rather than limitation of the present invention, and any innovation and creation that do not exceed in the connotation scope of the present invention all fall within protection scope of the present invention.
Claims (7)
1. the lock-out pulse control circuit of anti-MCU or drive IC fault comprises signal sample circuit, lock-out pulse change-over circuit and shaping control signal output circuit, it is characterized in that:
Described sample circuit is sampled and the amplitude adjustment to the output voltage signal of MCU or drive IC, and output sampled voltage signal is given the lock-out pulse change-over circuit;
The normal burst sampled voltage signal that described lock-out pulse change-over circuit will have duty ratio control is coupled to the input of shaping control signal output circuit, blocks the direct current failure voltage signal simultaneously;
Described shaping control signal output circuit comprises shaping circuit, control circuit and a clamping diode; Described shaping circuit will be exported to control circuit after will having the normal burst sampling coupled voltages signal shaping of duty ratio control; Control circuit output high level, clamping diode ends; When the input of control circuit was low level, the control circuit output low level made the clamping diode conducting, and the control end that described clamping diode will be led the complementary push-pull formula power amplification circuit that drives the loop is clamped on zero potential.
2. the lock-out pulse control circuit of anti-MCU as claimed in claim 1 or drive IC fault; It is characterized in that described sample circuit is the pure resistance circuit, perhaps is operation amplifier circuit, comparator circuit, transistor circuit, MOSFET circuit or IGBT circuit any kind of logic control pipe circuit wherein.
3. the lock-out pulse control circuit of anti-MCU as claimed in claim 1 or drive IC fault is characterized in that described lock-out pulse change-over circuit comprises the pulse coupling capacitance.
4. the lock-out pulse control circuit of anti-MCU as claimed in claim 4 or drive IC fault is characterized in that described pulse coupling capacitance is electrochemical capacitor or polarity free capacitor, and quantity is one or more.
5. the lock-out pulse control circuit of anti-MCU as claimed in claim 4 or drive IC fault; It is characterized in that positive pulse fly-wheel diode of described pulse coupling capacitance two ends parallel connection; Negative pulse fly-wheel diode of series connection between the output of said pulse coupling capacitance and the ground, and the plus earth of described negative pulse fly-wheel diode.
6. the lock-out pulse control circuit of anti-MCU as claimed in claim 1 or drive IC fault is characterized in that the shaping circuit of described shaping control signal output circuit is one or more levels RC integrating circuit.
7. the lock-out pulse control circuit of anti-MCU as claimed in claim 1 or drive IC fault; The control circuit that it is characterized in that described shaping control signal output circuit is operation amplifier circuit or comparator circuit, perhaps is the combination of transistor circuit, MOSFET circuit or IGBT circuit any two logic control pipe circuit wherein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210180696.1A CN102684652B (en) | 2012-06-04 | 2012-06-04 | The synchronized-pulse control circuit of anti-MCU or drive IC fault |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210180696.1A CN102684652B (en) | 2012-06-04 | 2012-06-04 | The synchronized-pulse control circuit of anti-MCU or drive IC fault |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102684652A true CN102684652A (en) | 2012-09-19 |
| CN102684652B CN102684652B (en) | 2015-11-18 |
Family
ID=46816115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210180696.1A Active CN102684652B (en) | 2012-06-04 | 2012-06-04 | The synchronized-pulse control circuit of anti-MCU or drive IC fault |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102684652B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840642A (en) * | 2012-11-27 | 2014-06-04 | 美的集团股份有限公司 | Electromagnetic heating device and drive circuit thereof |
| CN105763107A (en) * | 2014-12-18 | 2016-07-13 | 深圳兴奇宏科技有限公司 | Motor driving circuit used for reducing switch loss |
| CN106684817A (en) * | 2016-12-29 | 2017-05-17 | 青岛海尔科技有限公司 | Protection circuit, load driving circuit and electrical appliance |
| CN106877278A (en) * | 2016-12-28 | 2017-06-20 | 武汉智能控制工业技术研究院有限公司 | A kind of circuit overloads protection system and guard method based on load detecting |
| CN107395165A (en) * | 2016-05-16 | 2017-11-24 | 上海亨骏自动化设备有限公司 | A kind of liquid level gauge echo time collection peak detection circuit |
| CN108631274A (en) * | 2018-05-15 | 2018-10-09 | 芜湖美的厨卫电器制造有限公司 | Device and method and electrical equipment for MCU error protections in electrical equipment |
| CN108696267A (en) * | 2017-04-12 | 2018-10-23 | 赤多尼科两合股份有限公司 | A kind of field-effect tube driving device, driving method and for electric installation |
| CN112684238A (en) * | 2021-01-08 | 2021-04-20 | 四川湖山电器股份有限公司 | Switching power tube load current real-time monitoring circuit and monitoring system |
| CN113037060A (en) * | 2021-03-03 | 2021-06-25 | 中国科学院电工研究所 | Driving device |
| CN113918501A (en) * | 2021-09-03 | 2022-01-11 | 珠海博盛科技有限公司 | Novel intelligent multi-point industrial internet remote input and output controller and method |
| CN114679170A (en) * | 2020-12-24 | 2022-06-28 | 圣邦微电子（北京）股份有限公司 | Signal conversion circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091664A (en) * | 1989-04-07 | 1992-02-25 | Fuji Electric Co., Ltd. | Insulated gate bipolar transistor circuit with overcurrent protection |
| JP2006166142A (en) * | 2004-12-08 | 2006-06-22 | Toyota Motor Corp | Overcurrent protective circuit and inverter provided with it |
| CN2879507Y (en) * | 2006-03-30 | 2007-03-14 | 徐起魄 | Self-positioning switch motor and its controller |
| CN202679330U (en) * | 2012-06-04 | 2013-01-16 | 浙江榆阳电子有限公司 | Synchronous pulse control circuit preventing fault of MCU and driver IC |
-
2012
- 2012-06-04 CN CN201210180696.1A patent/CN102684652B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5091664A (en) * | 1989-04-07 | 1992-02-25 | Fuji Electric Co., Ltd. | Insulated gate bipolar transistor circuit with overcurrent protection |
| JP2006166142A (en) * | 2004-12-08 | 2006-06-22 | Toyota Motor Corp | Overcurrent protective circuit and inverter provided with it |
| CN2879507Y (en) * | 2006-03-30 | 2007-03-14 | 徐起魄 | Self-positioning switch motor and its controller |
| CN202679330U (en) * | 2012-06-04 | 2013-01-16 | 浙江榆阳电子有限公司 | Synchronous pulse control circuit preventing fault of MCU and driver IC |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103840642A (en) * | 2012-11-27 | 2014-06-04 | 美的集团股份有限公司 | Electromagnetic heating device and drive circuit thereof |
| CN105763107B (en) * | 2014-12-18 | 2019-08-23 | 深圳兴奇宏科技有限公司 | To reduce the motor drive circuit of switching loss |
| CN105763107A (en) * | 2014-12-18 | 2016-07-13 | 深圳兴奇宏科技有限公司 | Motor driving circuit used for reducing switch loss |
| CN107395165B (en) * | 2016-05-16 | 2022-09-09 | 上海亨骏自动化设备有限公司 | Peak detection circuit for acquiring echo time of liquid level meter |
| CN107395165A (en) * | 2016-05-16 | 2017-11-24 | 上海亨骏自动化设备有限公司 | A kind of liquid level gauge echo time collection peak detection circuit |
| CN106877278A (en) * | 2016-12-28 | 2017-06-20 | 武汉智能控制工业技术研究院有限公司 | A kind of circuit overloads protection system and guard method based on load detecting |
| CN106877278B (en) * | 2016-12-28 | 2019-04-09 | 武汉智能控制工业技术研究院有限公司 | A kind of circuit overloads protection system and guard method based on load detecting |
| CN106684817B (en) * | 2016-12-29 | 2019-04-19 | 青岛海尔科技有限公司 | A kind of protection circuit, load driving circuits and electric appliance |
| CN106684817A (en) * | 2016-12-29 | 2017-05-17 | 青岛海尔科技有限公司 | Protection circuit, load driving circuit and electrical appliance |
| CN108696267A (en) * | 2017-04-12 | 2018-10-23 | 赤多尼科两合股份有限公司 | A kind of field-effect tube driving device, driving method and for electric installation |
| CN108631274A (en) * | 2018-05-15 | 2018-10-09 | 芜湖美的厨卫电器制造有限公司 | Device and method and electrical equipment for MCU error protections in electrical equipment |
| CN114679170A (en) * | 2020-12-24 | 2022-06-28 | 圣邦微电子（北京）股份有限公司 | Signal conversion circuit |
| CN112684238A (en) * | 2021-01-08 | 2021-04-20 | 四川湖山电器股份有限公司 | Switching power tube load current real-time monitoring circuit and monitoring system |
| CN113037060A (en) * | 2021-03-03 | 2021-06-25 | 中国科学院电工研究所 | Driving device |
| CN113918501A (en) * | 2021-09-03 | 2022-01-11 | 珠海博盛科技有限公司 | Novel intelligent multi-point industrial internet remote input and output controller and method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102684652B (en) | 2015-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102684652B (en) | The synchronized-pulse control circuit of anti-MCU or drive IC fault | |
| CN106602504B (en) | A kind of photovoltaic Quick shut-off device and photovoltaic system | |
| CN104935315A (en) | Igbt drive circuit | |
| CN102347603B (en) | Drive and protection circuit for IGBT (Insulated Gate Bipolar Transistor) | |
| CN103427607B (en) | The drive circuit of insulated gate bipolar transistor | |
| CN201766490U (en) | Driving circuit based on IGBT bridge-type switch topology and protecting module thereof | |
| CN102377326B (en) | Insulated gate bipolar transistor (IGBT)-bridge-switch-topology-based driving circuit and protection module thereof | |
| CN201898438U (en) | Insulated gate bipolar translator (IGBT) driving circuit used for traction convertor of city rail vehicle | |
| CN101976943A (en) | High-power discharge switch gear based on electricity triggered thyristors | |
| CN203117691U (en) | An intelligent power module and a high-voltage power switch | |
| CN204633632U (en) | A kind of MMC submodule topology with DC Line Fault ride-through capability | |
| CN202679330U (en) | Synchronous pulse control circuit preventing fault of MCU and driver IC | |
| CN202333786U (en) | Drive circuit for restraining IGBT (Insulated Gate Bipolar Transistor) overcurrent | |
| CN102006040B (en) | Insulated gate bipolar transistor (IGBT) circuit | |
| CN204882781U (en) | High -power converter drives detection circuitry in advance | |
| CN103280767A (en) | Brake resistor protection circuit and brake resistor protection method for inverters | |
| CN102707179A (en) | Fault detection device for inverter | |
| CN202564933U (en) | Power supply device | |
| CN109980600A (en) | A kind of negative bias voltage protection circuit of TR assembly power supply | |
| CN202372620U (en) | Detection circuit of circuit breaker | |
| CN205407256U (en) | Multi -stage parallel connection supply circuit | |
| CN103475196B (en) | A kind of insulated gate bipolar transistor driver | |
| CN201118194Y (en) | Energy supply protector | |
| CN102593815A (en) | Lightning protection circuit at input terminal of inverter welding equipment | |
| CN107317489A (en) | A kind of threephase switch power supply and its over-pressed protection circuit and over-pressed means of defence |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Synchronous pulse control circuit for preventing faults of microprogrammed control unit (MCU) or driving integrated circuit (IC) Effective date of registration: 20180627 Granted publication date: 20151118 Pledgee: Bank of Hangzhou Limited by Share Ltd. Tongxiang branch Pledgor: ZHEJIANG YUYANG ELECTRONICS CO.,LTD. Registration number: 2018330000148 |
|
| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20220725 Granted publication date: 20151118 Pledgee: Bank of Hangzhou Limited by Share Ltd. Tongxiang branch Pledgor: ZHEJIANG YUYANG ELECTRONICS CO.,LTD. Registration number: 2018330000148 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Tongde Road, Phase III Industrial Expansion Zone, Tongxiang Economic Development Zone, Jiaxing City, Zhejiang Province, 314500 Patentee after: Zhejiang Yuyang Electronics Co., Ltd. Address before: Tongde Road, Phase III Industrial Expansion Zone, Tongxiang Economic Development Zone, Jiaxing City, Zhejiang Province, 314500 Patentee before: ZHEJIANG YUYANG ELECTRONICS CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder |