CN102684616A - Radio frequency power amplifier realized by using CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process - Google Patents
Radio frequency power amplifier realized by using CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process Download PDFInfo
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- CN102684616A CN102684616A CN201210140694XA CN201210140694A CN102684616A CN 102684616 A CN102684616 A CN 102684616A CN 201210140694X A CN201210140694X A CN 201210140694XA CN 201210140694 A CN201210140694 A CN 201210140694A CN 102684616 A CN102684616 A CN 102684616A
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- 239000003990 capacitor Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
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- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 3
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Abstract
The invention relates to a radio frequency power amplifier realized by using a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process. The radio frequency power amplifier comprises three CMOS transistors and three cascaded inverters; the source electrode of a transistor I is connected with the drain electrode of a transistor II; the source electrode of the transistor II is connected with the drain electrode of a transistor III; and the source electrode of the transistor II is grounded; the grids of the transistor I and the transistor II are respectively connected with a direct-current voltage source. The output end of an inverter III is connected with the grid electrode of the transistor III and is used for driving the transistor III; and the input end of an inverter I is used as an input end of a power amplifier for connecting radio frequency signals. A drain electrode of each CMOS transistor is used as an output end of the power amplifier, and is connected with direct-current voltage VDD (Voltage Drain Drain) through an inductor. The radio frequency power amplifier provided by the invention uses the full CMOS process to realize a radio frequency front-end amplifying circuit of a mobile phone. On the premise of ensuring properties, the cost of a radio frequency front-end chip of the mobile phone is reduced by more than 50%; the integrated level of the radio frequency front-end chip is improved; and the radio frequency power amplifier is conductive to realizing a mobile phone radio frequency transmitter-receiver and a radio frequency front-end power amplifying combined framework, so that the circuit board area of the mobile phone can be greatly saved.
Description
Technical field
The present invention relates to be applied to the radio-frequency module integrated technology of mobile device, particularly the integrated technology of radio-frequency front-end power amplifier.
Background technology
The semiconductor chip used as far as conventional mobile phone, a terminal mainboard need be made up of polylith chips such as radio-frequency front-end, RF transceiver, power management, flash memory, Base-Band Processing, touch-screen controls.Baseband processing chip is responsible for voice and text signal are carried out Code And Decode formation digital signal.RF transceiver is responsible for digital signal high frequency carrier being carried out modulation and demodulation, and radio-frequency front-end then is responsible for modulated radio-frequency carrier signal amplifying emission is gone out or accepted the radiofrequency signal of base station and is delivered to RF transceiver.Present all mobile phone semiconductor chips are removed radio-frequency front-end and are realized by the CMOS technology of standard in addition.Because radio-frequency front-end need carry out power amplification to radiofrequency signal; And CMOS technology is in the requirement that is difficult to satisfy radio-frequency front-end aspect the high speed high power; The main flow technology of radio-frequency front-end all is GaAs technology all the time; Greatly reduce the integrated level of chip for cell phone like this, be unfavorable for reducing cost, also be unfavorable for reducing simultaneously the volume of mobile phone circuit.
The half space of circuit board of mobile phone because the conventional radio frequency chip almost will account for; This has limited multi-purpose adding undoubtedly; And people can not stop the pursuit of chip for cell phone solution cheaply all the time, and this just needs constantly to improve the integrated level of chip for cell phone.Adopt CMOS technology, realize radio-frequency front-end and make it that through complex circuit design integrated with RF transceiver is a paths of reduction chip for cell phone system cost.For the CMOS radio-frequency front-end, raise the efficiency, need less transistor; And to increase power, and needing bigger transistor again, this is a contradiction that is difficult to be in harmonious proportion.In order to guarantee that cmos device can be operated in the mobile phone frequency range, selected cmos device generally all possesses very little size, and so the withstand voltage properties of device can reduce greatly.But in order to export bigger power, device must can bear bigger voltage again.This contradiction becomes obstruction radio-frequency front-end and the integrated obstacle of other chips for cell phone.
The present invention proposes a kind of method that adopts standard CMOS process to realize high-performance 2G mobile phone front end power amplifier, and proposition is integrated in radio-frequency front-end power amplifier chip and RF transceiver the framework of a wafer.
Summary of the invention
The problem that the present invention need solve is to adopt CMOS technology to realize the radio-frequency front-end power amplifier.
For addressing the above problem, the technical scheme that the present invention taked is: the radio-frequency power amplifier that a kind of CMOS of employing technology realizes comprises:
CMOS transistor one, CMOS transistor two, CMOS transistor three that source electrode, drain electrode link to each other successively, transistor three source grounds;
The reverser of three cascades, said reverser three outputs are connected with the grid of CMOS transistor three, are used to drive CMOS transistor three; The input of reverser one is as power amplifier input incoming radio frequency signal;
CMOS transistor one, CMOS transistor two grids connect direct voltage source respectively;
One drain electrode of CMOS transistor is as the power amplifier output, and this end meets direct voltage VDD through inductance, and the output that this inductance is used to amplifier provides direct current biasing;
A kind of preferred version based on above-mentioned basic scheme is: be connected through resistance respectively between the substrate of said CMOS transistor one, CMOS transistor two, CMOS transistor three and the source electrode.This resistance can reduce the transistorized substrate current of each CMOS, and the CMOS transistor current is mainly flowed out by source electrode.
Another kind of preferred version based on above-mentioned basic scheme is: said power amplifier input is serially connected with filter capacitor, and radiofrequency signal is through filter capacitor input reverser one.
The present invention also provides a kind of technical scheme of the radio-frequency power amplifier with two inputs and two outputs of following employing differential mode realization:
A kind of radio-frequency power amplifier that adopts CMOS technology to realize comprises:
The differential amplifier circuit of forming by two CMOS transistor groups and be respectively applied for two reverser cascade circuits that drive two CMOS transistor groups;
Each CMOS transistor group comprises CMOS transistor one, CMOS transistor two, the CMOS transistor three that source electrode, drain electrode link to each other successively; Each reverser cascade circuit comprises reverser one, reverser two, the reverser three of three cascades; CMOS transistor group of a corresponding driving of reverser cascade circuit;
In the drive group of being made up of a reverser cascade circuit and CMOS transistor group, said reverser three outputs are connected with the grid of CMOS transistor three, are used to drive CMOS transistor three; The input of reverser one is as an input incoming radio frequency signal of power amplifier;
CMOS transistor one, CMOS transistor two grids connect direct voltage source respectively, transistor three source grounds;
One drain electrode of CMOS transistor is as output of power amplifier, and this end meets direct voltage VDD through the direct current biasing inductance.
The preferred version of above-mentioned basic technical scheme based on differential mode is: be connected through resistance respectively between the substrate of said CMOS transistor one, CMOS transistor two, CMOS transistor three and the source electrode.
Another preferred version of above-mentioned basic technical scheme based on differential mode is: said power amplifier input is serially connected with filter capacitor, and radiofrequency signal is through filter capacitor input reverser one.
With compared with techniques in the past, the present invention has the following advantages:
1) the present invention adopts whole CMOS technology to realize the mobile phone front end power amplifier, under the prerequisite of guaranteed performance, the cost of mobile phone front end chip has been reduced more than 50% than common solution;
2) because the present invention adopts whole CMOS technology to realize the mobile phone front end power amplifier; But improved the integrated level of radio-frequency front-end power amplifier chip; Be beneficial to the framework of realizing mobile phone radio frequency transceiver and the unification of radio-frequency front-end power amplifier; Save the area of mobile phone printed circuit board (PCB) greatly, realize greater functionality for mobile phone possibility is provided.
Description of drawings
Fig. 1 is the radio-frequency front-end power amplifier embodiment one circuit theory sketch map that described CMOS technology realizes;
Fig. 2 is described CMOS radio-frequency front-end power amplifier embodiment two difference channel principle schematic.
Embodiment
For the ease of it will be appreciated by those skilled in the art that the present invention is done further detailed description below in conjunction with accompanying drawing and embodiment.
As shown in Figure 1; The radio-frequency power amplifier that the employing CMOS technology that is disclosed in the present embodiment realizes comprises reverser inv1, inv2, the inv3 of transistor T 1, transistor T 2, transistor T 3 and three cascades; Between the input of each inverter and output, be connected to bias resistance; Make inverter be operated in the range of linearity and become the inverting amplifier of high-gain, transistor T 3 is driven by the reverser of three cascades.Wherein, three transistors all adopt the CMOS transistor.Transistor T 1 source electrode connects transistor T 2 drain electrodes, and transistor T 2 source electrodes connect transistor T 3 drain electrodes, transistor T 3 source grounds.Transistor T 1, transistor T 2 grids connect 5V, 1.8V direct voltage source respectively.Said reverser inv3 output is connected with the grid of CMOS transistor T 3, is used to drive CMOS transistor T 3; The input of reverser inv1 is as the filter capacitor connection radiofrequency signal of power amplifier input through serial connection.1 drain electrode of CMOS transistor T is as the power amplifier output, and this end meets direct voltage VDD through inductance.
In the present embodiment, the problem of withstand voltage when being operated in high-power mode in order to solve cmos device is respectively range upon range of linking to each other of CMOS transistor of 1.8V, 1.8V and 5V with 3 withstand voltages, and comes the grid of driving transistors T3 with the inverter of 3 cascades.The grid of transistor T 2 and T1 is connected respectively on the suitable direct voltage.When circuit working, the radiofrequency signal of input gets into inverter inv1 by electric capacity, is used for the grid of driving transistors T3 after amplifying through 3 grades of inverters.When the gain of inverter was enough big, the grid voltage of transistor T 3 presented square wave, and three all conductings of transistor when the grid voltage of transistor T 3 is in the positive half period of square wave and are set up the electric current of increase gradually in the inductance that the drain electrode of transistor T 1 links to each other.When the grid voltage of transistor T 3 was in the square-wave signal negative half-cycle, three transistors all ended, and this moment, the drain voltage of transistor T 1 will be elevated to about 12V.The drain electrode of common gallium arsenide transistor can be born the above voltage of 12V, and the drain electrode of amplifier tube can directly link to each other with inductance when therefore adopting gallium arsenide transistor to realize the radio-frequency front-end power amplifier.Withstand voltagely have only 5V usually because CMOS is transistorized,, thereby can in output high-power, sustain high voltage so the present invention makes its voltage endurance capability reach identical with gallium arsenide transistor through the CMOS transistor is stacked up.In addition, in the present embodiment, between the substrate of CMOS transistor T 1, CMOS transistor T 2, CMOS transistor T 3 and source electrode, be connected to resistance respectively.This resistance can reduce the transistorized substrate current of each CMOS, and the CMOS transistor current is mainly flowed out by source electrode.
Similar with such scheme, the present invention also provides a kind of more excellent solution in addition, and is as shown in Figure 2.Among this embodiment, described radio-frequency power amplifier comprises: the differential amplifier circuit of being made up of two CMOS transistor groups and be respectively applied for two reverser cascade circuits that drive two CMOS transistor groups.Wherein, each CMOS transistor group comprises CMOS transistor one, CMOS transistor two, the CMOS transistor three that source electrode, drain electrode link to each other successively; Each reverser cascade circuit comprises reverser one, reverser two, the reverser three of three cascades, is connected to bias resistance between the input of each inverter and the output; CMOS transistor group of a corresponding driving of reverser cascade circuit; In the drive group of being made up of a reverser cascade circuit and CMOS transistor group, said reverser three outputs are connected with the grid of CMOS transistor three, are used to drive CMOS transistor three; The input of reverser one is as an input incoming radio frequency signal of power amplifier; CMOS transistor one, CMOS transistor two grids connect direct voltage source respectively; One drain electrode of CMOS transistor is as output of power amplifier, and this end meets direct voltage VDD through inductance; CMOS transistor three links to each other with the output of the reverser of three cascades.In the present embodiment, described radio-frequency power amplifier has two inputs (RF_inp and RF_inn) and two outputs (RF_outp, RF_outn).
Equally, in each drive group, between CMOS transistor one and the CMOS transistor two, between CMOS transistor two and the CMOS transistor three and be connected to resistance respectively between CMOS transistor three and the ground.Two input RF_inp of said power amplifier and RF_inn also are serially connected with filter capacitor respectively, and radiofrequency signal is through filter capacitor input reverser.
Design principle embodiment illustrated in fig. 2 and operation principle and embodiment one are similar, repeat no more at this.
To sum up can know, adopt the radio-frequency power amplifier of circuit framework design of the present invention, can make full use of the advantage of CMOS technology; And also can improve the overall performance of radio-frequency power amplifier; Reduce the area of circuit, improved integrated level, effectively reduced cost.
The not concrete part of introducing all can adopt ripe functional circuit of the prior art among the present invention, and those skilled in the art all can choose according to prior art flexibly.
More than be merely more preferably embodiment of the present invention, what need explanation is, conceives under the prerequisite its any minor variations of doing and is equal to replacement not breaking away from the present invention, all should belong to protection scope of the present invention.
Claims (8)
1. a radio-frequency power amplifier that adopts CMOS technology to realize is characterized in that, comprising:
CMOS transistor one, CMOS transistor two, CMOS transistor three that source electrode, drain electrode link to each other successively, transistor three source grounds;
The reverser of three cascades, said reverser three outputs are connected with the grid of CMOS transistor three, are used to drive CMOS transistor three; The input of reverser one is as power amplifier input incoming radio frequency signal;
CMOS transistor one, CMOS transistor two grids connect direct voltage source respectively;
One drain electrode of CMOS transistor is as the power amplifier output, and this end meets direct voltage VDD through inductance.
2. the radio-frequency power amplifier that employing according to claim 1 CMOS technology realizes is characterized in that: be connected through resistance respectively between the substrate of said CMOS transistor one, CMOS transistor two, CMOS transistor three and the source electrode.
3. the radio-frequency power amplifier that employing according to claim 1 CMOS technology realizes is characterized in that: between the input of each inverter and output, be connected to bias resistance.
4. the radio-frequency power amplifier that employing CMOS technology according to claim 1 realizes is characterized in that said power amplifier input is serially connected with filter capacitor, and radiofrequency signal is through filter capacitor input reverser one.
5. a radio-frequency power amplifier that adopts CMOS technology to realize is characterized in that, comprising:
The differential amplifier circuit of forming by two CMOS transistor groups and be respectively applied for two reverser cascade circuits that drive two CMOS transistor groups;
Each CMOS transistor group comprises CMOS transistor one, CMOS transistor two, the CMOS transistor three that source electrode, drain electrode link to each other successively; Each reverser cascade circuit comprises reverser one, reverser two, the reverser three of three cascades; CMOS transistor group of a corresponding driving of reverser cascade circuit;
In the drive group of being made up of a reverser cascade circuit and CMOS transistor group, said reverser three outputs are connected with the grid of CMOS transistor three, are used to drive CMOS transistor three; The input of reverser one is as an input incoming radio frequency signal of power amplifier;
CMOS transistor one, CMOS transistor two grids connect direct voltage source respectively, transistor three source grounds;
One drain electrode of CMOS transistor is as output of power amplifier, and this end meets direct voltage VDD through inductance.
6. the radio-frequency power amplifier that employing according to claim 5 CMOS technology realizes is characterized in that: be connected through resistance respectively between the substrate of said CMOS transistor one, CMOS transistor two, CMOS transistor three and the source electrode.
7. the radio-frequency power amplifier that employing according to claim 5 CMOS technology realizes is characterized in that: between the input of each inverter and output, be connected to bias resistance.
8. the radio-frequency power amplifier that employing CMOS technology according to claim 5 realizes is characterized in that said power amplifier input is serially connected with filter capacitor, and radiofrequency signal is through filter capacitor input reverser one.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102843121A (en) * | 2012-09-24 | 2012-12-26 | 厦门大学 | Wideband radio-frequency switch CMOS (Complementary Metal Oxide Semiconductors) circuit |
| CN103236430A (en) * | 2013-03-29 | 2013-08-07 | 豪芯微电子科技（上海）有限公司 | Fully-integrated CMOS (complementary metal oxide semiconductor) radio frequency front-end circuit |
| CN103762948A (en) * | 2013-12-24 | 2014-04-30 | 芯原微电子(上海)有限公司 | Complementary metal-oxide-semiconductor transistor (CMOS) radio frequency power amplifier integrated on system on chip |
| CN104170267A (en) * | 2012-09-25 | 2014-11-26 | Dsp集团有限公司 | CMOS based TX/RX switch |
| US9312820B2 (en) | 2012-09-23 | 2016-04-12 | Dsp Group Ltd. | CMOS based TX/RX switch |
| CN112234142A (en) * | 2020-12-14 | 2021-01-15 | 南京元络芯科技有限公司 | High-power radio-frequency semiconductor integrated resistor and semiconductor chip |
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| CN202565230U (en) * | 2012-05-09 | 2012-11-28 | 惠州市正源微电子有限公司 | Radio-frequency power amplifier achieved through complementary metal-oxide-semiconductor (CMOS) process |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9312820B2 (en) | 2012-09-23 | 2016-04-12 | Dsp Group Ltd. | CMOS based TX/RX switch |
| CN102843121A (en) * | 2012-09-24 | 2012-12-26 | 厦门大学 | Wideband radio-frequency switch CMOS (Complementary Metal Oxide Semiconductors) circuit |
| CN102843121B (en) * | 2012-09-24 | 2014-10-08 | 厦门大学 | Wideband radio-frequency switch CMOS (Complementary Metal Oxide Semiconductors) circuit |
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| CN103236430A (en) * | 2013-03-29 | 2013-08-07 | 豪芯微电子科技（上海）有限公司 | Fully-integrated CMOS (complementary metal oxide semiconductor) radio frequency front-end circuit |
| CN103236430B (en) * | 2013-03-29 | 2015-10-21 | 豪芯微电子科技（上海）有限公司 | Fully integrated CMOS radio-frequency (RF) front-end circuit |
| CN103762948A (en) * | 2013-12-24 | 2014-04-30 | 芯原微电子(上海)有限公司 | Complementary metal-oxide-semiconductor transistor (CMOS) radio frequency power amplifier integrated on system on chip |
| CN103762948B (en) * | 2013-12-24 | 2016-09-28 | 芯原微电子(上海)有限公司 | A kind of CMOS radio-frequency power amplifier being integrated in SOC(system on a chip) |
| CN112234142A (en) * | 2020-12-14 | 2021-01-15 | 南京元络芯科技有限公司 | High-power radio-frequency semiconductor integrated resistor and semiconductor chip |
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