CN102684459B - Reference voltage current circuit with ultra-low temperature sensitivity and switch power supply using same - Google Patents
Reference voltage current circuit with ultra-low temperature sensitivity and switch power supply using same Download PDFInfo
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- CN102684459B CN102684459B CN201210159958.6A CN201210159958A CN102684459B CN 102684459 B CN102684459 B CN 102684459B CN 201210159958 A CN201210159958 A CN 201210159958A CN 102684459 B CN102684459 B CN 102684459B
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Abstract
The invention relates to a reference voltage current circuit with ultra-low temperature sensitivity. The reference voltage current circuit with ultra-low temperature sensitivity is characterized by comprising a voltage reference device, a temperature compensator and a voltage follower which are electrically connected sequentially. The invention also provides a switch power supply using the reference voltage current circuit. The reference voltage current circuit disclosed by the invention can reduce the effect of the temperature on reference voltage and reference current in the switch power supply to a maximal extent, can effectively reduce the dependence on temperature of an application environment after being applied to the switch power supply, and has low circuit design cost and better use value.
Description
Technical field
The present invention relates to the ultralow reference voltage current circuit of a kind of temperature susceplibility (Ultra-low Temperature Drift Voltage and Current Reference) and apply the Switching Power Supply of this circuit.
Background technology
The switch power converter being widely used on consumer electronics product generally includes two kinds of forms: exchange and turn direct current (AC-DC) and DC-to-DC (DC-DC).The user of switch power converter has the advantages that distributional region is extensive, temperature condition difference is large, therefore objectively requires the reference voltage of switch power converter internal control circuit use and the characteristic that reference current must be able to be resisted large difference variation.The ultralow reference voltage current circuit of a kind of temperature susceplibility becomes internal control circuit inevitable choice.Conventional power source transducer usually can only adapt to narrower temperature range (20 ~ 80 degree), is difficult to adapt to the application whole year of high latitude area.
For reaching the round-the-clock application of universe, the temperature that the switch power converter occurring in recent years has all adopted new technology to promote internal reference voltage suppresses ability, this series products of domestic enterprise can adapt to the difference variation of-25 ~ 85 degrees Celsius, but still cannot provide the product of steady operation under utmost point cold air temperature.This premium quality product is monopolized by the international large factory of only a few, and their this series products has reached other adaptive capacity of-40 ~ 85 degrees Celsius of technical grade.The reference voltage circuit using in traditional switch power supply changeover device concentrates in traditional band-gap reference circuit method, and as shown in Figure 1, Fig. 1 has described a kind of power supply changeover device 10 based on legacy frequencies modulation tech.One control circuit 20 lotus roots are connected to a back coupling unit 15, and to produce a switching signal VSW, this switching signal regulates the output signal VO of power supply changeover device 10, and these back coupling unit 15 lotus roots are connected to the output of power supply changeover device 10, to produce a feedback signal VFB.Wherein this switching signal VSW changes according to feedback signal VFB.A switching current IS of one transformer TR1 is converted into voltage signal VS via picking up flow resistor RS.This signal VS is accepted and produces accordingly switching signal VSW by control circuit 20.In figure, control circuit 20 comprises a reference voltage current circuit, a pulse width modulator.This pulse-width modulator lotus root is connected to this reference circuits response feedback signal VFB and signal VS produces a frequency switching signal VSW.If reference voltage and reference current signal temperature drift that this reference voltage current circuit provides are large, to there is very big-difference in duty ratio and the frequency of this switching signal VSW of switch power converter under condition of different temperatures so, finally cause switch power converter huge in different latitude area and seasonal zone loading capability difference, job insecurity.
Summary of the invention
In view of this, an object of the present invention is to provide the ultralow reference voltage current circuit of a kind of temperature susceplibility, can be applicable to Switching Power Supply etc., by reducing to greatest extent inner reference voltage and the drift of reference current to temperature of using, realize the stable application of-50 ~ 120 ℃ of wide temperature ranges, really meet the application of high temperature extremely frigid zones, possess stronger region, general time-domain.
Above-mentioned purpose of the present invention is achieved in that the reference voltage current circuit that a kind of temperature susceplibility is ultralow, it is characterized in that, comprising:
One voltage follower;
One temperature compensator, its first output is connected with the input of described voltage follower; And
One voltage reference device, described voltage reference device comprises:
One band-gap reference device, the first input end of this band-gap reference device is connected with the first output of described temperature compensator, and the second input of this band-gap reference device is connected with the second output of described temperature compensator;
One first feedback amplifier, its first input end is connected with the first output of described band-gap reference device, and the second input of this first feedback amplifier is connected with the second output of described band-gap reference device; And
One starter, the output of this starter is connected with the first input end of described band-gap reference device.
In an embodiment of the present invention, described band-gap reference device comprises first and second transistor and first, second and third resistance; The base stage of described the first transistor is connected with the first input end of described band-gap reference device with the base stage of transistor seconds; The collector electrode of described the first transistor is connected with the first output of described band-gap reference device; The emitter-base bandgap grading of described the first transistor is connected with the second end of the first resistance; The collector electrode of described transistor seconds is connected with the second output of described band-gap reference device; The emitter-base bandgap grading of this transistor seconds is connected with the first end of first and second resistance; The second end of this second and third resistance is connected with the second input of described band-gap reference device; The 3rd resistance first end ground connection.
In an embodiment of the present invention, described starter comprise third and fourth, five transistors and the 4th resistance; This third and fourth transistorized base stage is connected with the first end of the 4th transistorized collector electrode and the 4th resistance; The second end lotus root of the 3rd transistorized collector electrode, the 4th resistance is connected to supply lines; The 3rd transistorized emitter-base bandgap grading is connected with the output of described starter; The 4th transistorized emitter-base bandgap grading is connected with collector electrode with the 5th transistorized base stage; The 5th transistorized emitter grounding.
In an embodiment of the present invention, the first described feedback amplifier comprises the 6th, seven, eight, nine, ten, 11 and ten two-transistors; Six, seven transistorized grid lotus roots are connected to the first input end of the 6th transistorized drain electrode and described the first feedback amplifier; The 7th transistorized drain electrode lotus root is connected to the output of described the first feedback amplifier, the grid of the tenth two-transistor and the 11 transistorized drain electrode; The 8th transistorized grid and drain electrode lotus root are connected to the second input of the 9th transistorized grid and described the first feedback amplifier; The 9th transistorized drain electrode lotus root is connected to the tenth transistorized drain electrode, source electrode and the 11 transistorized grid; Six, seven, eight, nine transistorized source electrode lotus roots are connected to supply lines; Ten, the drain electrode lotus root of the source electrode of 11, ten two-transistors and the tenth two-transistor is connected to ground.
In an embodiment of the present invention, described temperature compensator comprises the 13,14,15,16 transistors, a current mirror and the 5th, six, seven, eight resistance; The 13 transistorized base stage is connected with the 14 transistorized base stage, collector electrode and the 15 transistorized emitter-base bandgap grading; The 13 transistorized collector electrode is connected with the first input end of this current mirror; The 13 transistorized emitter-base bandgap grading is connected with the first end of the 5th, six resistance; The 14 transistorized emitter-base bandgap grading is connected with the 5th resistance the second end; The 6th resistance the second end ground connection; The 15 transistorized base stage is connected with the first output and the 7th, the eight resistance first ends of described temperature compensator; The 15 transistorized collector electrode connects supply lines; The 16 transistorized grid is connected with the input of described temperature compensator; The 16 transistorized drain electrode is connected with the 7th resistance the second end; The 16 transistorized source electrode connects supply lines; The 8th resistance the second end ground connection; The output of this current mirror is connected with the second output of described temperature compensator; The second input end grounding of this current mirror.
In an embodiment of the present invention, described current mirror is comprised of according to being electrically connected by preset ratio the 17,18 transistors and the 19,20 transistors.
In an embodiment of the present invention, described voltage follower comprises the second feedback amplifier, the 21,22,23 transistors and the 9th, ten resistance; The first end lotus root of this second feedback amplifier is connected to the input of described voltage follower; The second end lotus root of this second feedback amplifier is connected to the second end and the 21 transistorized source electrode of the 9th resistance; The 3rd end lotus root of this second feedback amplifier is connected to the 21 transistorized grid; The 9th resistance is connected to ground through the tenth resistance lotus root; The 21 transistorized drain electrode lotus root is connected to the drain electrode of the 20 two-transistor; The grid lotus root of the 20 two-transistor is connected to ground; The drain electrode lotus root of the 20 two-transistor is connected to the 23 transistorized drain electrode, grid; The 23 transistor source lotus root is connected to supply lines.
In an embodiment of the present invention, the ultralow reference voltage current circuit of described temperature susceplibility is to be integrated in an integrated package.
Another object of the present invention is to provide a kind of Switching Power Supply of applying above-mentioned reference voltage current circuit, and this power supply possesses high temperature stability and wide temperature difference adaptive capacity.
This object adopts following scheme to realize: the Switching Power Supply of circuit described in a kind of application rights 1, comprise transformer and a control circuit, it is characterized in that: described control circuit lotus root connects a back coupling unit of being located at transformer output, to produce a switching signal, regulate the pulse duration of described transformer, described control circuit is connect and is formed by the ultralow reference voltage current circuit of described temperature susceplibility and pulse width modulator lotus root.
In an embodiment of the present invention, described control circuit is one by the ultralow reference voltage current circuit of described temperature susceplibility and pulse width modulator lotus root, to connect the integrated circuit forming.
The present invention adopts analog circuit to realize superpower high temperature difference stability.Circuit is simple, and area is little, and can be designed to integrated circuit, and cost is low, has good market value.
Accompanying drawing explanation
Fig. 1 is the power supply changeover device based on traditional reference voltage current circuit.
Fig. 2 is the schematic block circuit diagram of the ultralow reference voltage current circuit of temperature susceplibility of the present invention.
Fig. 3 is the circuit connection diagram of the ultralow reference voltage current circuit of temperature susceplibility of the present invention.
Fig. 4 is the temperature profile of reference voltage and reference current in Fig. 3.
Fig. 5 is the circuit theory schematic block diagram based on the ultralow reference voltage current circuit power supply changeover device of temperature susceplibility.
Primary clustering symbol description:
20,300: control circuit
Q
1~ Q
8, Qa, Qb, M6 ~ M12, M16 ~ 23: transistor
TR1: transformer
D1: diode
A1: feedback amplifier
15,104: back coupling unit
R
s, R1 ~ R10: resistor
C1: capacitor
1000: the reference voltage current circuit that temperature susceplibility is ultralow
2000: pulse width modulator
FB: feedback and hold
VCC: supply power voltage input
V
cC: supply power voltage
SW: switch output
V
fB: feedback voltage
V
iN: input voltage
V
o: output voltage
V
s: inspection stream voltage
I
s: switch current
I
rEF: reference current
V
rEF: reference voltage
I
in: input current
V
sW: switching signal
VDD1: supply lines voltage
VBG: band gap voltage
β
△ REF: reference voltage and reference current change percentage.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described further.
The invention provides the ultralow reference voltage current circuit of a kind of temperature susceplibility, it is characterized in that: by a voltage reference device, a temperature compensator, a voltage follower, be electrically connected and form successively.Concrete, referring to Fig. 3, Fig. 3 is the circuit connection diagram of the ultralow reference voltage current circuit of the temperature susceplibility of the present embodiment, in figure, the output lotus root of described voltage reference device is connected to the input of temperature compensator; First and second input of described voltage reference device respectively lotus root is connected to first and second output of temperature compensator.The first output lotus root of described temperature compensator is connected to the input of voltage follower.
Described voltage reference device comprises a band-gap reference device, the first feedback amplifier, a starter.This first and second output of band-gap reference device respectively lotus root is connected to first and second input of the first feedback amplifier; This band-gap reference device first input end lotus root is connected to the output of starter and the first input end of described voltage reference device; The second input lotus root of this band-gap reference device is connected to the second input of described voltage reference device.The output of this first feedback amplifier is connected with the output of described voltage reference device.Described band-gap reference device is comprised of according to electric connection first and second transistor, first, second and third resistance; Described starter by third and fourth, five transistors and the 4th resistance forms according to electric connection; The first described feedback amplifier consists of by electric connection successively the 6th, seven, eight, nine, ten, 11, ten two-transistors.Described temperature compensator is comprised of according to being electrically connected the 13,14,15,16 transistors, a current mirror, the 5th, six, seven, eight resistance; Described current mirror is electrically connected and forms successively by preset ratio by the 17,18 transistors and the 19,20 transistors.Described voltage follower is comprised of by electric connection the second feedback amplifier, the 21,22 and 23 transistors and the 9th, ten resistance.
The ultralow reference voltage current circuit of stable susceptibility of the present invention can be integrated in an integrated package, can greatly reduce volume and the cost of circuit.
In order to allow those skilled in the art better understand the present invention, below our combined circuit operation principle of the present invention is further described:
Please continue referring to Fig. 3, the ultralow reference voltage current circuit 1000 of temperature susceplibility is electrically connected and forms successively by a voltage reference device, a temperature compensator, a voltage follower.Voltage reference device consists of band-gap reference device, the first feedback amplifier, a starter.During work, produce a bandgap voltage reference VBG on band-gap reference device, this bandgap voltage reference VBG feeds back to band-gap reference device by temperature compensation unit, thereby has greatly suppressed the variations in temperature of VBG.Temperature is floated ultralow bandgap voltage reference VBG and finally by voltage follower, is followed the stable preset reference voltage source V REF that produces isolation, and this voltage floats ultralow reference current IREF in the stable temperature of the upper generation of resistor (R9+R10) of zero-temperature coefficient.Each modular circuit detailed operation process is as follows:
(1) operation principle of voltage reference device and temperature compensator
Voltage reference device comprises: the first feedback amplifier (current mirror M6 and M7, M8 and M9, M10 and M11 and supplementary electric capacity M12 form), band-gap reference device (transistor Q1 and Q2 and resistance R 1, R2 and R3 form) and starter (transistor Q3, Q4, Q5 and R4 form).Temperature compensator comprises: current mirror (M17, M18, M19 and M20 form), transistor (Q13, Q14, Q15 and M16) and resistance (R5, R6, R7, R8).Analyze for a cycle of powering on of supply lines VDD1:
When 1. initial, VDD1 voltage is 0, and in circuit, each transistor is all in cut-off state;
2. after supply lines Power supply, produce supply power voltage VDD1, starter is worked immediately, Q3 conducting, electric current flows to the base stage of Q1 and Q2, after Q1 and Q2 conducting, produce energy gap electric current and carry out error amplification from the drain electrode output of transistor M11 and M7 by the first feedback amplifier being formed by M6 ~ M12, send in temperature compensator, through transistor M16 and feedback resistor R7, R8, feed back to the base stage of energy gap to pipe Q1 and Q2, produce the band gap voltage VBG of Low Drift Temperature.After VBG is stable, due to VBG>Vbe (transistor junction pressure drop), Q3 turn-offs, and starts and finishes.
3. after startup finishes, band gap voltage VBG sends into the base stage of the Q15 in temperature compensator simultaneously, in the temperature compensation unit being formed by Q13, Q14 resistor R5, R6, produce temperature-compensated current, by the current mirror that formed by M17, M18, M19, M20 by preset ratio feed back input to the proportion resistor device R3 of band-gap reference device, form extra independent temperature bucking voltage Δ V, greatly suppress the temperature of reference voltage V BG and floated, so just produced the reference voltage V BG of ultra-low temperature drift.By this technology reference voltage VBG, at the drift value within the scope of temperature-50 ~ 120 ℃, be less than 0.9mV.
(2) operation principle of voltage follower
The ultra-low temperature drift band gap voltage VBG being produced by band-gap reference and temperature compensator, produces by the voltage follower being comprised of the second feedback amplifier, transistor M21 and resistor R9, R10 the reference voltage VREF keeping apart completely with input.The temperature of reference voltage VREF is floated completely and is equated with VBG, and by zero temp shift resistance R 9 and R10, produces the reference current IREF of ultra-low temperature drift, and this reference current IREF is used to other modules of Switching Power Supply inside by transistor M22 and M23 mirror image.Fig. 4 has shown that the temperature of this reference voltage and reference current floats curve.In figure, abscissa t is Celsius temperature, ordinate β
△ REFfor reference voltage or reference current temperature drift percentage (β
△ REF=△ t* △ REF/REF).Within the scope of-50 ~ 120 ℃, amplitude of variation is less than 0.072%, is less than 5.23ppm/ ℃ after conversion.
Visible in sum, the electrology characteristic that the reference voltage VREF being produced by the present invention and IREF possess ultra-low temperature drift, this characteristic is applied to switch power converter, can allow switch power converter be applied to high and cold high temperature area, can adapt to and dislike very much temperature condition slightly.Circuit is realized simply simultaneously, and the little cost of area is low, uses switching voltage converter of the present invention in market competition, to have more advantage.
Although be noted that the present invention is applied in power supply changeover device by way of example here, the present invention itself has the wider range of application beyond example.Such as current mirror can for example, reach the mirror image effect of equivalent signals transmission by other method except example (using bipolar transistor).
Refer to Fig. 5, Fig. 5 is the power supply changeover device 100 based on the ultralow reference voltage current circuit of temperature susceplibility, comprises that control circuit 300 lotus roots are connected to a back coupling unit 104, to produce a switching signal V
sW, this switching signal regulates the output signal V of power supply changeover device
o.These back coupling unit 104 lotus roots are connected to the output V of power supply changeover device
o, to produce a feedback signal V
fB.Wherein, this switching signal V
sWaccording to feedback signal V
fBand change.A switching current I of one transformer TR1
svia resistance R
sbe converted into voltage signal V
s.This signal V
sby control circuit 300, accepted and produce accordingly switching signal V
sW.This control circuit 300 produces reference voltage VREF and the reference current IREF signal of ultra-low temperature drift by the ultralow reference voltage current circuit 1000 of internal temperature sensitive degree.VREF, IREF, V
fB, V
slotus root is connected to pulse width modulator 2000, produces the switching signal V of highly stable ultra-low temperature drift through pulse width modulator 2000
sW.
Although the present invention discloses as above with preferred embodiment, yet it should not limit the present invention, any person skilled in the art, without departing from the spirit and scope of the present invention, when doing a little change and replacement.Therefore protection scope of the present invention is when being as the criterion depending on accompanying the scope of the claims person of defining.
Claims (9)
1. the ultralow reference voltage current circuit of temperature susceplibility, is characterized in that, comprising:
One voltage follower;
One temperature compensator, its first output is connected with the input of described voltage follower; And
One voltage reference device, described voltage reference device comprises:
One band-gap reference device, the first input end of this band-gap reference device is connected with the first output of described temperature compensator, and the second input of this band-gap reference device is connected with the second output of described temperature compensator;
One first feedback amplifier, its first input end is connected with the first output of described band-gap reference device, and the second input of this first feedback amplifier is connected with the second output of described band-gap reference device; And
One starter, the output of this starter is connected with the first input end of described band-gap reference device;
Described band-gap reference device comprises first and second transistor and first, second and third resistance; The base stage of described the first transistor is connected with the first input end of described band-gap reference device with the base stage of transistor seconds; The collector electrode of described the first transistor is connected with the first output of described band-gap reference device; The emitter-base bandgap grading of described the first transistor is connected with the second end of the first resistance; The collector electrode of described transistor seconds is connected with the second output of described band-gap reference device; The emitter-base bandgap grading of this transistor seconds is connected with the first end of first and second resistance; The second end of this second and third resistance is connected with the second input of described band-gap reference device; The 3rd resistance first end ground connection.
2. the ultralow reference voltage current circuit of temperature susceplibility according to claim 1, is characterized in that: described starter comprise third and fourth, five transistors and the 4th resistance; This third and fourth transistorized base stage is connected with the first end of the 4th transistorized collector electrode and the 4th resistance; The second end lotus root of the 3rd transistorized collector electrode, the 4th resistance is connected to supply lines; The 3rd transistorized emitter-base bandgap grading is connected with the output of described starter; The 4th transistorized emitter-base bandgap grading is connected with collector electrode with the 5th transistorized base stage; The 5th transistorized emitter grounding.
3. the ultralow reference voltage current circuit of temperature susceplibility according to claim 1, is characterized in that: the first described feedback amplifier comprises the 6th, seven, eight, nine, ten, 11 and ten two-transistors; Six, seven transistorized grid lotus roots are connected to the first input end of the 6th transistorized drain electrode and described the first feedback amplifier; The 7th transistorized drain electrode lotus root is connected to the output of described the first feedback amplifier, the grid of the tenth two-transistor and the 11 transistorized drain electrode; The 8th transistorized grid and drain electrode lotus root are connected to the second input of the 9th transistorized grid and described the first feedback amplifier; The 9th transistorized drain electrode lotus root is connected to the tenth transistorized drain electrode, source electrode and the 11 transistorized grid; Six, seven, eight, nine transistorized source electrode lotus roots are connected to supply lines; Ten, the drain electrode lotus root of the source electrode of 11, ten two-transistors and the tenth two-transistor is connected to ground.
4. the ultralow reference voltage current circuit of temperature susceplibility according to claim 1, is characterized in that: described temperature compensator comprises the 13,14,15,16 transistors, a current mirror and the 5th, six, seven, eight resistance; The 13 transistorized base stage is connected with the 14 transistorized base stage, collector electrode and the 15 transistorized emitter-base bandgap grading; The 13 transistorized collector electrode is connected with the first input end of this current mirror; The 13 transistorized emitter-base bandgap grading is connected with the first end of the 5th, six resistance; The 14 transistorized emitter-base bandgap grading is connected with the 5th resistance the second end; The 6th resistance the second end ground connection; The 15 transistorized base stage is connected with the first output and the 7th, the eight resistance first ends of described temperature compensator; The 15 transistorized collector electrode connects supply lines; The 16 transistorized grid is connected with the input of described temperature compensator; The 16 transistorized drain electrode is connected with the 7th resistance the second end; The 16 transistorized source electrode connects supply lines; The 8th resistance the second end ground connection; The output of this current mirror is connected with the second output of described temperature compensator; The second input end grounding of this current mirror.
5. according to claim, require the ultralow reference voltage current circuit of temperature susceplibility described in 4, it is characterized in that: described current mirror is comprised of according to being electrically connected by preset ratio the 17,18 transistors and the 19,20 transistors.
6. according to claim, require the ultralow reference voltage current circuit of temperature susceplibility described in 1, it is characterized in that: described voltage follower comprises the second feedback amplifier, the 21,22,23 transistors and the 9th, ten resistance; The first end lotus root of this second feedback amplifier is connected to the input of described voltage follower; The second end lotus root of this second feedback amplifier is connected to the second end and the 21 transistorized source electrode of the 9th resistance; The 3rd end lotus root of this second feedback amplifier is connected to the 21 transistorized grid; The 9th resistance is connected to ground through the tenth resistance lotus root; The 21 transistorized drain electrode lotus root is connected to the source electrode of the 20 two-transistor; The grid lotus root of the 20 two-transistor is connected to ground; The drain electrode lotus root of the 20 two-transistor is connected to the 23 transistorized drain electrode, grid; The 23 transistor source lotus root is connected to supply lines.
7. the reference voltage current circuit ultralow according to the temperature susceplibility described in claim 1 to 6 any one, is characterized in that: the ultralow reference voltage current circuit of described temperature susceplibility is to be integrated in an integrated package.
8. the Switching Power Supply of circuit described in an application rights 1, comprise transformer and a control circuit, it is characterized in that: described control circuit lotus root connects a back coupling unit of being located at transformer output, to produce a switching signal, regulate the pulse duration of described transformer, described control circuit is connect and is formed by the ultralow reference voltage current circuit of described temperature susceplibility and pulse width modulator lotus root.
9. Switching Power Supply according to claim 8, is characterized in that: described control circuit is one by the ultralow reference voltage current circuit of described temperature susceplibility and pulse width modulator lotus root, to connect the integrated circuit forming.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210159958.6A CN102684459B (en) | 2012-05-22 | 2012-05-22 | Reference voltage current circuit with ultra-low temperature sensitivity and switch power supply using same |
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| CN201210159958.6A CN102684459B (en) | 2012-05-22 | 2012-05-22 | Reference voltage current circuit with ultra-low temperature sensitivity and switch power supply using same |
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| CN102684459B true CN102684459B (en) | 2014-07-16 |
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| US5087830A (en) * | 1989-05-22 | 1992-02-11 | David Cave | Start circuit for a bandgap reference cell |
| JP2008271503A (en) * | 2007-03-26 | 2008-11-06 | Matsushita Electric Ind Co Ltd | Reference current circuit |
| CN101226414B (en) * | 2008-01-30 | 2012-01-11 | 北京中星微电子有限公司 | Method for dynamic compensation of reference voltage and band-gap reference voltage source |
| CN102109871A (en) * | 2009-12-24 | 2011-06-29 | 上海华虹集成电路有限责任公司 | Band gap reference source |
| CN102354245B (en) * | 2011-08-05 | 2013-06-12 | 电子科技大学 | Band gap voltage reference source |
| CN202634256U (en) * | 2012-05-22 | 2012-12-26 | 大连连顺电子有限公司 | Reference voltage current circuit with ultra-low temperature sensitivity and switching power supply using same |
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Owner name: XIAMEN YUANSHUN MICROELECTRONICS TECHNOLOGY CO., L Free format text: FORMER OWNER: DALIAN LIAN-SHUN ELECTRONICS CO., LTD. FUJIAN FUSHUN MICROELECTRONIC CO., LTD. Effective date: 20150428 |
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Effective date of registration: 20150428 Address after: 116023 Liaoning Province, Dalian City High-tech Park 107 Guang Xian Road No. 1 building two floor Patentee after: Dalian Lianshun Electronic Co., Ltd. Patentee after: Xiamen unit is along microelectric technique company limited Patentee after: UNISONIC TECHNOLOGIES Co.,Ltd. Patentee after: Fujian Fushun Microelectronic Co., Ltd. Address before: 116023 Liaoning Province, Dalian City High-tech Park 107 Guang Xian Road No. 1 building two floor Patentee before: Dalian Lianshun Electronic Co., Ltd. Patentee before: UNISONIC TECHNOLOGIES Co.,Ltd. Patentee before: Fujian Fushun Microelectronic Co., Ltd. |