CN102683539A - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
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- CN102683539A CN102683539A CN2012100184059A CN201210018405A CN102683539A CN 102683539 A CN102683539 A CN 102683539A CN 2012100184059 A CN2012100184059 A CN 2012100184059A CN 201210018405 A CN201210018405 A CN 201210018405A CN 102683539 A CN102683539 A CN 102683539A
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- 238000001914 filtration Methods 0.000 claims description 59
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 230000004888 barrier function Effects 0.000 claims description 28
- 238000010276 construction Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Chemical compound O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
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- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
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- 238000005516 engineering process Methods 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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Abstract
The invention relates to a light-emitting diode structure, wherein an optical filter film is arranged above a transparent conductive layer of a light-emitting diode crystal grain, and the optical filter film has selective reflectivity and penetration rate to light with different wavelengths, so that the light emitted by the light-emitting diode crystal grain can penetrate through the optical filter film, and excitation light generated after the light emitted by the diode crystal grain excites a fluorescent material is reflected, thereby reducing the light energy loss caused by the fact that the excitation light is absorbed after being scattered back to the crystal grain, and further increasing the brightness of the light-emitting diode.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, be meant a kind of light emitting diode construction that promotes brightness especially.
Background technology
Lighting apparatus is indispensable among the human lives, along with the development of technology, have better illumination and more the illuminations of power saving also arise at the historic moment gradually.Light-emitting diode little by little is used as lighting source at present; Light-emitting diode (Light-Emitting Diode; LED) with conventional light source relatively, light-emitting diode be have that volume is little, power saving, luminous efficiency is good, the life-span is long, operant response speed soon and the advantages such as pollution of noxious substances such as non-thermal radiation and mercury.For the use on the lighting field, wherein more enjoy the concern and the research of all circles with white light emitting diode.
The employed manufacturing technology of commercial at present white light LEDs mainly contains three: 1. blue-ray LED cooperates yellow fluorescent powder: employed fluorescent material is mainly the YAG fluorescent material of yttrium-aluminium-garnet structure, and gold-tinted that powder sends and unabsorbed blue light can produce white light; 2. blue-ray LED cooperates redness and green emitting phosphor: employed fluorescent material is main with the fluorescent material of sulfur-bearing mainly, and that powder sends is red, green glow and unabsorbed blue light can produce white light; 3. ultraviolet leds cooperates red, blue and green three-color phosphor: the ultraviolet light that utilizes LED to produce excites simultaneously and can send fluorescent material red, blue, green glow more than three kinds or three kinds respectively, sends three coloured light after fluorescent material is excited and is mixed into white light again.Yet the exciting light of the light-emitting diode of part can be gone back to crystal grain inside by the fluorescent material backscattering, and exciting light is absorbed after reflection for several times, causes the utilance of exciting light significantly to reduce.
See also Fig. 1; It is the light-emitting diode structure sketch map of prior art, and is as shown in the figure, and existing light-emitting diode comprises a substrate 12; One first semiconductor layer 22, one second semiconductor layer 24 and a transparency conducting layer 26; First semiconductor layer 22 is located at substrate 12 tops, and second semiconductor layer 24 is located at first semiconductor layer, 22 tops, and transparency conducting layer 26 is located at second semiconductor layer, 24 tops; First metal electrode 32 and 34 of second metal electrodes are located at respectively on first semiconductor layer 22 and the transparency conducting layer 26; Be covered in transparency conducting layer 26 tops with an insulating barrier 42 more at last, and let insulating barrier 42 cover first semiconductor layer 22, let first metal electrode 32 and second metal electrode 34 exposed simultaneously.Because this insulating barrier 42 is made up of the insulation material of a fixed refraction; Light for different wave length all has identical reflectivity and penetrance; Therefore; No matter be all penetrable this insulating barrier 42 of light that produces behind the light that sends of light-emitting diode or the excitated fluorescent powder and be scattered into crystal grain inside, cause optical energy loss.
Therefore, the present invention provides a kind of light emitting diode construction, and it is can reduce exciting light to get in the light-emitting diode, with lifting brightness, and solves the above problems.
Summary of the invention
Main purpose of the present invention; Be to provide a kind of light emitting diode construction; It is through optical filtering film the light of different wave length to be had selective reflecting rate and penetrance, therefore, and the penetrable optical filtering film of the light that LED crystal particle sent; The exciting light that is produced behind the optical excitation fluorescent material that diode crystal particle sent then is reflected, and so can reduce to be absorbed the optical energy loss that is caused after exciting light is scattered back crystal grain.
Technical scheme of the present invention is: a kind of light emitting diode construction comprises:
One substrate;
One first semiconductor layer is located at this substrate top;
One active layers is the top of being located at this first semiconductor layer, and this luminescent layer can send the light of tool one first wavelength;
One second semiconductor layer is located at the top of this active layers; And
One transparency conducting layer is located at this second semiconductor layer top;
Wherein, This first semiconductor layer top is provided with one first metal electrode; This transparency conducting layer top is provided with one second metal electrode; Further comprise at least one optical filtering film, this optical filtering film is located at this transparency conducting layer top and is extended this second semiconductor layer of cover part and this first semiconductor layer of part, and this first metal electrode and this second metal electrode are exposed to this optical filtering film.
Among the present invention, wherein this optical filtering film comprises the material that the light of different wave length is had selective reflecting rate and penetrance.
Among the present invention, wherein this optical filtering film has the penetrance more than 50% to the light of this first wavelength, and the light of non-first wavelength is had the reflectivity more than 50%.
Among the present invention, wherein this optical filtering film comprise different refractivity more than two kinds material to be stacked into sandwich construction.
Among the present invention, a kind of material tool high index of refraction of this optical filtering film wherein, its refractive index between 2.0-2.6, another kind of material tool low-refraction, its refractive index is between 1.2-1.7.
Among the present invention, wherein the high-index material in this optical filtering film can be titanium dioxide TiO2, niobium pentaoxide Nb2O5 or tantalum pentoxide Ta2O5.
Among the present invention, wherein the low-index material in this optical filtering film can be silicon dioxide SiO2 or bifluoride magnesium MgF2.
Among the present invention, wherein the light of this first wavelength is the light of dominant wavelength between 440nm～490nm.
Among the present invention; More comprise an insulating barrier; This insulating barrier is located between this optical filtering film and this transparency conducting layer; This second semiconductor layer of this first semiconductor layer part of this insulating barrier cover part, this first metal electrode and this second metal electrode pass this insulating barrier and are exposed to this optical filtering film.
Among the present invention, more comprise an electric current barrier layer, this electric current barrier layer is located at this second semiconductor layer top and relative with this second metal electrode.
The beneficial effect that the present invention has: light emitting diode construction of the present invention, comprise a substrate, one first semiconductor layer, an active layers, one second semiconductor layer and a transparency conducting layer, first semiconductor layer is located at the substrate top; Active layers is located at first semiconductor layer top of part; This luminescent layer can send the light of tool first wavelength, and second semiconductor layer is located at the active layers top, and transparency conducting layer is located at second semiconductor layer top; Wherein, First semiconductor layer top is provided with one first metal electrode, and the transparency conducting layer top is provided with one second metal electrode, further comprises at least one optical filtering film; Optical filtering film is located at the transparency conducting layer top and is extended second semiconductor layer of cover part and first semiconductor layer of part, and first metal electrode and second metal electrode are exposed to optical filtering film.
Utilize optical filtering film reflection exciting light, but can not cover the light that LED crystal particle sends, improve the brightness of light-emitting diode by this.
Description of drawings
Fig. 1 is the light-emitting diode structure sketch map of prior art;
Fig. 2 is the light-emitting diode structure sketch map of preferred embodiment of the present invention
Fig. 3 is the light penetration action sketch map of the optical filtering film of preferred embodiment of the present invention;
Fig. 4 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; And
Fig. 5 is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention.
[figure number is to as directed]
1 light-emitting diode, 12 substrates
22 first semiconductor layers, 24 second semiconductor layers
26 transparency conducting layers, 32 first metal electrodes
34 second metal electrodes, 42 look edge layers
52 substrates, 54 first semiconductor layers
56 second semiconductor layers, 58 transparency conducting layers
60 look edge layers, 62 first metal electrode
64 second metal electrodes, 72 optical filtering films
74 active layers, 76 electric current barrier layers
L1 light L2 exciting light
Embodiment
For making architectural feature of the present invention and the effect reached there are further understanding and understanding, cooperate detailed explanation, explain as follows in order to preferred embodiment and accompanying drawing:
See also Fig. 2, it is for the light-emitting diode structure sketch map of preferred embodiment of the present invention; As shown in the figure; The structure of light-emitting diode 1 of the present invention; Comprise a substrate 52, one first semiconductor layer 54, an active layers 74, one first metal electrode 62, one second semiconductor layer 56, a transparency conducting layer 58, one second metal electrode 64 and at least one optical filtering film 72; First semiconductor layer 54 is located at substrate 52 tops, and first metal electrode 62 is located at first semiconductor layer, 54 tops, and active layers 74 is located at the top of this first semiconductor layer; This luminescent layer can send the light of tool first wavelength; Second semiconductor layer 56 is located at active layers 74 tops, and transparency conducting layer 58 is located at second semiconductor layer, 56 tops, and second metal electrode 64 is located at transparency conducting layer 58 tops; Optical filtering film 72 is located at transparency conducting layer 58 tops and is extended covering second semiconductor layer 56 and first semiconductor layer, 54, the first metal electrodes 62 and second metal electrode 64 and is exposed to optical filtering film 72.This optical filtering film has the penetrance more than 50% to the light of this first wavelength, and the light of non-first wavelength is had the reflectivity more than 50%; Better person has the penetrance more than 80% for the light to this first wavelength; And the light to non-first wavelength has the reflectivity more than 50%, and optical filtering film 72 can let LED crystal particle issued light line pass through, and this LED crystal particle issued light line is excited outside fluorescent material and the exciting light reflection that produces; Can avoid exciting light to get in the LED crystal particle; And cause light loss, and so can improve the generation efficient of fluorescence, improve the brightness of light-emitting diode by this.
The material of transparency conducting layer 58 is to be selected from the glutinous agent of nickel/gold, tin indium oxide, cadmium tin, antimony tin, electrically conducting transparent, zinc oxide, zinc oxide to be and one of them of above-mentioned group of combination in any.Transparency conducting layer 58 is an example with the tin indium oxide, and tin indium oxide has characteristic transparent and conduction, therefore is suitable as between second metal electrode 64 and second semiconductor layer 56 to be connected.Transparency conducting layer 58 evenly distributes in order to the electric current with the outside supply, can be applied in large scale crystal grain LED the energy consumption that also can avoid current concentration to produce.First metal electrode 62 is and n type first semiconductor layer 54 forms ohmic contact, and being connected to a negative pole of external power source, second metal electrode 64 and transparency conducting layer 58 contact and be connected to a positive pole of external power source as the contact layer of n type.
This embodiment is example with the white light emitting diode, when active layers is sent blue light (dominant wavelength is between the light of 440nm～490nm).The yellow fluorescence bisque (figure do not show) of blue emission to light-emitting diode produces gold-tinted to excite sodium yellow fluorescent material, and the gold-tinted that is produced does not excite the blue light of yellow fluorescent powder and produces white light with part again.And the optical filtering film 72 of this embodiment is an one-way membrane; The blue light that lets active layers send out is penetrable to go out optical filtering film 72; Optical filtering film 72 outer gold-tinteds then can't penetrate in the optical filtering film 72; Instead by optical filtering film 72 reflection, be absorbed the luminous energy consume that is produced after so avoiding gold-tinted to be scattered back crystal grain, and then the overall brightness of lifting light-emitting diode.
In addition; Optical filtering film 72 comprises the material that the light of different wave length is had selective reflecting rate or penetrance; And embodiment is to be that example is explained with single layer optical filter coating 72; Optical filtering film 72 through individual layer promotes the generation efficient of white lights, and the present invention also can make the optical filtering film 72 of apparatus sandwich construction, for instance; The sandwich construction that optical filtering film 72 is combined by the material stack of two kinds or more kinds of different refractivities; Better person, optical filtering film 72 is that the material stack by two kinds of different refractivities combines, and is formed on the transparency conducting layer 58 and extends with vapor deposition or coating method to cover second semiconductor layer 56 and first semiconductor layer 54.The combination of materials of above-mentioned two kinds of tool different refractivities is preferable is chosen as the high index of refraction material of refractive index n value between 2.0-2.6; With the low-refraction material of n value between 1.2-1.7, optical filtering film 72 is the periodic structures that are made up of high index of refraction material and low-refraction metaboly.
Above-mentioned high index of refraction material, for example: titanium dioxide (TiO
2), niobium pentaoxide (Nb
2O
5) or tantalum pentoxide (Ta
2O
5) etc.; Above-mentioned low-refraction material, for example: silicon dioxide (SiO
2) or magnesium fluoride (MgF
2) etc.The thickness of optical filtering film 72 can be between tens of approximately dusts to tens of microns according to material behavior.
Fig. 3, it is the light penetration and the reflex action sketch map of the optical filtering film of preferred embodiment of the present invention; As shown in the figure; When LED crystal particle was switched on, the electronics in the active layers combined with electric hole, and the energy that these electronics combine with electric hole sends with the form of light L1; And the phosphor powder layer (figure does not show) that the stimulated luminescence diode crystal particle is outer and produce exciting light L2; Because optical filtering film has optionally penetrance and reflectivity for the light of different wave length, so the light L1 that LED crystal particle sent can see through this optical filtering film 72, and the long exciting light L2 of wavelength not only can't penetrate this optical filtering film 72 entering crystal grain inside; Instead by optical filtering film 72 reflections, thereby the brightness of lifting light-emitting diode.
See also Fig. 4; It is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure; The embodiment that this embodiment is different from Fig. 2 is that this embodiment more comprises an insulating barrier 60; Insulating barrier 60 is located between optical filtering film 72 and the transparency conducting layer 58, and first semiconductor layer 54 that insulating barrier 60 covers transparency conducting layer 58, part passes insulating barrier 60 and is exposed to optical filtering film 72 with second semiconductor layer, 56, the first metal electrodes 62 and second metal electrode 64 partly.The material of insulating barrier 60 is one of them of silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums and above-mentioned group of combination in any; Because silicon dioxide is a light transmission height and the strong material of insulating properties; Therefore be preferable selection; Through insulating barrier 60 each parts, receive external force and damage with each parts of avoiding LED crystal particle with encapsulation LED crystal grain.This embodiment can be after being provided with insulating barrier 60, optical filtering film 72 on the vapor deposition again, and insulating barrier 60 also can be used as the part in the sandwich construction of optical filtering film 72.
See also Fig. 5; It is the structural representation of the light emitting diode construction of another preferred embodiment of the present invention; As shown in the figure; The embodiment that this embodiment is different from Fig. 2 is that the light-emitting diode 1 of this embodiment more comprises an electric current barrier layer 76, and electric current barrier layer 76 is located at second semiconductor layer, 56 tops and relative with second metal electrode 64.Because second metal electrode 64 is not the material of printing opacity; Therefore second metal electrode 64 is with shaded portions light; Like this then can influence the luminous efficiency of light-emitting diode, so embodiment more use electric current barrier layer 76 in order to cover second semiconductor layer 56 be positioned at second metal electrode 64 under the electric current that passed through, let second semiconductor layer, 56 other position institute galvanizations increase; Like this then can make second metal electrode 64 under luminous efficiency reduce, and promote the luminous efficiency of other positions.
In sum; The invention relates to a kind of light emitting diode construction, it is in the top of a light-emitting diode at least one optical filtering film to be set, through optical filtering film to let LED crystal particle issued light line penetrate; Produce an exciting light to excite a fluorescent material; And can get into light-emitting diodes body intracrystalline to avoid exciting light through optical filtering film, so can improve the generation efficient of exciting light, improve the overall brightness of light-emitting diode by this.
In sum; Be merely preferred embodiment of the present invention; Be not to be used for limiting the scope that the present invention implements, all equalizations of doing according to the described shape of claim scope of the present invention, structure, characteristic and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (10)
1. a light emitting diode construction is characterized in that, comprises:
One substrate;
One first semiconductor layer is located at this substrate top;
One active layers is the top of being located at this first semiconductor layer, and this luminescent layer can send the light of tool one first wavelength;
One second semiconductor layer is located at the top of this active layers; And
One transparency conducting layer is located at this second semiconductor layer top;
Wherein, This first semiconductor layer top is provided with one first metal electrode; This transparency conducting layer top is provided with one second metal electrode; Further comprise at least one optical filtering film, this optical filtering film is located at this transparency conducting layer top and is extended this second semiconductor layer of cover part and this first semiconductor layer of part, and this first metal electrode and this second metal electrode are exposed to this optical filtering film.
2. light emitting diode construction as claimed in claim 1 is characterized in that wherein this optical filtering film comprises the material that the light of different wave length is had selective reflecting rate and penetrance.
3. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this optical filtering film has the penetrance more than 50% to the light of this first wavelength, and the light of non-first wavelength is had the reflectivity more than 50%.
4. light emitting diode construction as claimed in claim 1 is characterized in that, wherein this optical filtering film comprise different refractivity more than two kinds material to be stacked into sandwich construction.
5. light emitting diode construction as claimed in claim 4 is characterized in that, a kind of material tool high index of refraction of this optical filtering film wherein, its refractive index between 2.0-2.6, another kind of material tool low-refraction, its refractive index is between 1.2-1.7.
6. light emitting diode construction as claimed in claim 5 is characterized in that, wherein the high-index material in this optical filtering film can be titanium dioxide TiO
2, niobium pentaoxide Nb
2O
5, or tantalum pentoxide Ta
2O
5
7. light-emitting component as claimed in claim 5 is characterized in that, wherein the low-index material in this optical filtering film can be silicon dioxide SiO
2Or bifluoride magnesium MgF
2
8. light emitting diode construction as claimed in claim 1 is characterized in that, wherein the light of this first wavelength is the light of dominant wavelength between 440nm～490nm.
9. light emitting diode construction as claimed in claim 1; It is characterized in that; More comprise an insulating barrier; This insulating barrier is located between this optical filtering film and this transparency conducting layer, this second semiconductor layer of this first semiconductor layer part of this insulating barrier cover part, and this first metal electrode and this second metal electrode pass this insulating barrier and are exposed to this optical filtering film.
10. light emitting diode construction as claimed in claim 1 is characterized in that, more comprises an electric current barrier layer, and this electric current barrier layer is located at this second semiconductor layer top and relative with this second metal electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100107775A TW201238083A (en) | 2011-03-08 | 2011-03-08 | Light emitting diode structure |
| TW100107775 | 2011-03-08 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102683539A true CN102683539A (en) | 2012-09-19 |
Family
ID=46815175
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100184059A Pending CN102683539A (en) | 2011-03-08 | 2012-01-16 | Light emitting diode structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102683539A (en) |
| TW (1) | TW201238083A (en) |
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| TW200828619A (en) * | 2006-12-22 | 2008-07-01 | Epistar Technology Corp | Gan light-emitting diode and method for manufacturing the same |
| US20080169752A1 (en) * | 2007-01-16 | 2008-07-17 | Kabushiki Kaisha Toshiba | Light emitting device |
| CN101297412A (en) * | 2005-09-28 | 2008-10-29 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting optoelectronic component |
| TW200910646A (en) * | 2007-08-31 | 2009-03-01 | Huga Optotech Inc | Semiconductor light-emitting device |
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2011
- 2011-03-08 TW TW100107775A patent/TW201238083A/en unknown
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2012
- 2012-01-16 CN CN2012100184059A patent/CN102683539A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101297412A (en) * | 2005-09-28 | 2008-10-29 | 奥斯兰姆奥普托半导体有限责任公司 | Radiation-emitting optoelectronic component |
| TW200828619A (en) * | 2006-12-22 | 2008-07-01 | Epistar Technology Corp | Gan light-emitting diode and method for manufacturing the same |
| US20080169752A1 (en) * | 2007-01-16 | 2008-07-17 | Kabushiki Kaisha Toshiba | Light emitting device |
| TW200910646A (en) * | 2007-08-31 | 2009-03-01 | Huga Optotech Inc | Semiconductor light-emitting device |
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| TW201238083A (en) | 2012-09-16 |
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Application publication date: 20120919 |