CN102683528A - Structure of light-emitting diode - Google Patents
Structure of light-emitting diode Download PDFInfo
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- CN102683528A CN102683528A CN2011100649460A CN201110064946A CN102683528A CN 102683528 A CN102683528 A CN 102683528A CN 2011100649460 A CN2011100649460 A CN 2011100649460A CN 201110064946 A CN201110064946 A CN 201110064946A CN 102683528 A CN102683528 A CN 102683528A
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Abstract
The invention relates to a structure of a light-emitting diode. A plurality of first metal wires are arranged on a first semiconductor layer, an active layer is arranged on part of the first semiconductor layer, a second semiconductor layer is arranged on the active layer, the active layer and the second semiconductor layer are provided with a plurality of grooves, the first metal wires are respectively located in the plurality of grooves, a plurality of insulating layers are covered on the first metal wires and the first semiconductor layer, and a transparent conducting layer is arranged on the second semiconductor layer and covered on the plurality of insulating layers. A plurality of second metal wires are arranged on the transparent conducting layer and correspond to the second semiconductor layer. Current of the light-emitting diode is evenly distributed through the first metal wires and the second metal wires, the current is prevented from being concentrated between the first metal wires and the second metal wires through the insulating layers, and the transparent conducting layer is continuously covered on the second semiconductor layer so as to enable the current to be more evenly distributed on the second semiconductor layer and to improve luminous efficiency of the structure of the light-emitting diode.
Description
Technical field
The present invention relates to a kind of light emitting diode construction, be meant a kind of light emitting diode construction that increases luminous efficiency especially.
Background technology
Electric energy is one of indispensable now energy, and lighting device, household appliances, communication device, traffic transmission or industrial equipment etc. can't operate if lack electric energy such as.And at present the energy in the whole world is to utilize burning petroleum or coal etc. mostly, and oil or coal be not get not to the utmost, if not positive searching alternative energy source, oil or coal consumption by the time is to the greatest extent the time, the whole world will be absorbed in energy crisis.For in response to present energy crisis, except the various renewable energy resources of active development, must practice thrift and use the energy, and promote the service efficiency of the energy effectively.
With the lighting apparatus is example, and lighting apparatus is indispensable among the human lives, along with the development of technology, have better illumination and more the illuminations of power saving also arise at the historic moment gradually.The lighting source that the most often uses at present is light-emitting diode.Light-emitting diode (Light-Emitting Diode; LED) compare with conventional light source; Light-emitting diode be have that volume is little, power saving, luminous efficiency is good, the life-span is long, operant response speed fast and the advantages such as pollution of noxious substances such as non-thermal radiation and mercury; Therefore in recent years, the application surface of light-emitting diode is to the utmost to be extensive.Past be because the brightness of light-emitting diode also can't replace traditional lighting source, but along with the continuous lifting of technical field, developed the light-emitting diode (high-capacity LED) of high illumination briliancy at present, and it is enough to replace traditional lighting source.
See also Fig. 1, it is the light-emitting diode structure sketch map of prior art; As shown in the figure; The light-emitting diode of prior art comprises a substrate 12; One first semiconductor layer 14, an active layers 15, one second semiconductor layer 16 and a conductive layer 18, the first semiconductor layers 14 are located at substrate 12 tops, and active layers 15 is located at part first semiconductor layer 14; Second semiconductor layer 16 is located at active layers 15 tops, and conductive layer 18 is located at second semiconductor layer, 16 tops.Prior art more comprises one first metal electrode 22 and one second metal electrode 24; First metal electrode 22 is to form nurse difficult to understand with first semiconductor layer 14 of n type to contact; To be connected to the negative pole of external power source; 24 conductive layers 18 with second semiconductor layer, 16 tops of p type of second metal electrode are connected, and second metal electrode 24 is connected to the positive pole of external power source.
When first metal electrode 22 and 24 energisings of second metal electrode; Produce electric current immediately through the active layers 15 between first semiconductor layer 14 and second semiconductor layer 16; And cause active layers 15 luminous by electric current, and the light that active layers 15 is produced will be exhaled by second semiconductor layer, 16 tops.Prior art conductive layer 18 has characteristic transparent and conduction; Electric current in order to the outside supply evenly distributes; With the energy consumption of avoiding current concentration to produce, yet, only depend on first metal electrode 22 and second metal electrode 24 with between current delivery to the first semiconductor layer 14 and second semiconductor layer 16; Then have the uneven phenomenon of CURRENT DISTRIBUTION and produce, like this then can influence the luminous efficiency of light-emitting diode.
So to above-mentioned, the present invention provides a kind of light emitting diode construction, it is not only to let electric current distribute uniformly, and can improve the luminous efficiency of light-emitting diode, to solve the above problems.
Summary of the invention
The object of the invention; Be to provide a kind of light emitting diode construction; It is to utilize a plurality of first plain conductors and a plurality of second plain conductor to be evenly distributed in first semiconductor layer, active layers and second semiconductor layer with the electric current with light-emitting diode; Increasing the luminous efficiency of light emitting diode construction, and cover a plurality of first plain conductors, to avoid current concentration between first plain conductor and second plain conductor by a plurality of insulating barriers; Let electric current be distributed in first semiconductor layer, active layers and second semiconductor layer more uniformly, further increase the luminous efficiency of light emitting diode construction.
Technical scheme of the present invention is achieved in that a kind of light emitting diode construction, comprises:
One substrate;
One first semiconductor layer is located at this substrate top;
One active layers is located at this first semiconductor layer top, and this first semiconductor layer of exposed part;
One second semiconductor layer is located at this active layers top, and this active layers and this second semiconductor layer have plurality of grooves;
A plurality of first plain conductors are located at this first semiconductor layer top, and those first plain conductors lay respectively in those grooves;
A plurality of insulating barriers are located in those grooves, and cover those first plain conductors and this first semiconductor layer;
One transparency conducting layer is located at this second semiconductor layer top and is covered those insulating barriers; And
A plurality of second plain conductors are located at the top of this transparency conducting layer, and to should second semiconductor layer.
Among the present invention, more comprise:
At least one first metal electrode is located at this first semiconductor layer top and is connected with those first plain conductors; And
At least one second metal electrode is located at this transparency conducting layer top and is connected with those second plain conductors.
Among the present invention, more comprise at least one first metal connecting piece, this first metal connecting piece is located at this first semiconductor layer top, and is connected with this first metal electrode and those first plain conductors.
Among the present invention, more comprise at least one second metal connecting piece, this second metal connecting piece is located at this transparency conducting layer top, and is connected with this second metal electrode and those second plain conductors.
Among the present invention, wherein the end of those first plain conductors is corresponding to this second metal electrode.
Among the present invention, wherein the end of those second plain conductors is corresponding to this first metal electrode.
Among the present invention, wherein those insulating barriers have a storage tank respectively, and this transparency conducting layer extension is arranged in this storage tank.
Among the present invention, wherein the material of this insulating barrier is to be selected from one of them of silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums and above-mentioned group of combination in any.
The beneficial effect that the present invention has: the present invention is evenly distributed in first semiconductor layer and second semiconductor layer by first plain conductor and second plain conductor with the electric current with light-emitting diode; To increase the luminous efficiency of light emitting diode construction; And cover first plain conductor by insulating barrier; To avoid current concentration between first plain conductor and second plain conductor, let electric current be distributed in first semiconductor layer and second semiconductor layer more uniformly, moreover; Simultaneously also can provide electric current more to be uniformly distributed in second semiconductor layer, further increase the luminous efficiency of light emitting diode construction by the transparency conducting layer of continous way (or holohedral form).
Description of drawings
Fig. 1 is the light-emitting diode structure sketch map of prior art;
Fig. 2 A is the vertical view of the light emitting diode construction of a preferred embodiment of the present invention;
Fig. 2 B is A-A ' the direction cutaway view of Fig. 2 A;
Fig. 2 C is B-B ' the direction cutaway view of Fig. 2 A;
Fig. 3 A is the vertical view of the light emitting diode construction of another preferred embodiment of the present invention; And
Fig. 3 B is C-C ' the direction cutaway view of Fig. 3 A.
[figure number is to as directed]
12 substrates, 14 first semiconductor layers
15 active layers, 16 second semiconductor layers
18 conductive layers, 22 first metal electrodes
24 second metal electrodes, 30 substrates
40 first semiconductor layers, 45 first plain conductors
50 active layers, 60 second semiconductor layers
62 grooves, 70 insulating barriers
72 storage tanks, 80 transparency conducting layers
90 second plain conductors, 100 first metal electrodes
110 second metal electrodes, 120 first metal connecting pieces
130 second metal connecting pieces
Embodiment
For making architectural feature of the present invention and the effect reached there are further understanding and understanding, cooperate detailed explanation, explain as follows in order to preferred embodiment and accompanying drawing:
See also Fig. 2 A, Fig. 2 B and Fig. 2 C, it is the vertical view of the light emitting diode construction of preferred embodiment of the present invention, A-A ' the directional profile figure of Fig. 2 A and B-B ' the directional profile figure of Fig. 2 A; As shown in the figure, light emitting diode construction of the present invention comprises a substrate 30, one first semiconductor layer 40, a plurality of first plain conductor 45, an active layers 50, one second semiconductor layer 60, a plurality of insulating barrier 70, a transparency conducting layer 80 and a plurality of second plain conductors 90 at least.First semiconductor layer 40 is located at substrate 30 tops, and active layers 50 is located at first semiconductor layer, 40 tops, and first semiconductor layer 40 of exposed part.Second semiconductor layer 60 is located at active layers 50 tops, is not covered on the first exposed semiconductor layer 40, and so the active layers 50 and second semiconductor layer 60 have plural groove 62.A plurality of first plain conductors 45 are arranged at first semiconductor layer 40, and are positioned at plural groove 62.A plurality of insulating barriers 70 are located at plural groove 62, and cover a plurality of first plain conductors 45 and the first exposed semiconductor layer 40, and the end face of each insulating barrier 70 of present embodiment and the end face of second semiconductor layer 60 are positioned on the same horizontal plane.Transparency conducting layer 80 is located at second semiconductor layer, 60 tops and is covered a plurality of insulating barriers 70, and a plurality of second plain conductors 90 are located at the top of transparency conducting layer 80, and corresponding second semiconductor layer 60.
The present invention is by first plain conductor 45 and second plain conductor 90; Be evenly distributed in first semiconductor layer 40 and second semiconductor layer 60 with electric current with light-emitting diode; To increase the luminous efficiency of light emitting diode construction; And cover first plain conductor 45 by insulating barrier 70,, let electric current be distributed in first semiconductor layer 40 and second semiconductor layer 60 more uniformly to avoid current concentration between first plain conductor 45 and second plain conductor 90.Moreover, also can provide electric current more to be uniformly distributed in second semiconductor layer 60 by the transparency conducting layer 80 of continous way simultaneously, further increase the luminous efficiency of light emitting diode construction.
The material of transparency conducting layer 80 of the present invention is to be selected from the glutinous agent of nickel/gold, tin indium oxide, cadmium tin, antimony tin, electrically conducting transparent, zinc oxide, zinc oxide to be and one of them of above-mentioned group of combination in any.Therefore the material of the transparency conducting layer 80 of present embodiment is to be example with the tin indium oxide, and tin indium oxide has characteristic transparent and conduction, is suitable as being connected between electrode and the semiconductor layer.Transparency conducting layer 80 evenly distributes in order to the electric current with the outside supply, with the energy consumption of avoiding current concentration to produce.
Consult Fig. 2 A again, the present invention more comprises at least one first metal electrode 100 and is located at first semiconductor layer, 40 tops with at least one second metal electrode, 110, the first metal electrodes 100, and is connected with first plain conductor 45.Second metal electrode 110 is located at transparency conducting layer 80 tops and is connected with second plain conductor 90.First metal electrode 100 is with first semiconductor layer 40 and is connected to a negative pole of external power source that second metal electrode 110 connects second semiconductor layers 60 and is connected to a positive pole of external power source.When first metal electrode 100 and 110 energisings of second metal electrode; Electric current can be scattered in first semiconductor layer 40, active layers 50 and second semiconductor layer 60 uniformly via first plain conductor 45 and second plain conductor 90, to increase the luminous efficiency of light emitting diode construction.
This embodiment more comprises at least one first metal connecting piece 120 and at least one second metal connecting piece 130; First metal connecting piece 120 is located at first semiconductor layer 40 and is connected with first metal electrode 100 and first plain conductor 45, and first metal electrode 100 is located at the intersection location of first plain conductor 45 and first metal connecting piece 120.Second metal connecting piece 130 is located at transparency conducting layer 80 and is connected with second metal electrode 110 and second plain conductor 90, and second metal electrode 110 is located at the intersection location of second plain conductor 90 and second metal connecting piece 130.Can let electric current distribute more uniformly by first metal connecting piece 120 and second metal connecting piece 130, so more can increase the luminous efficiency of light emitting diode construction.
In addition; The end of first plain conductor 45 is corresponding to second metal electrode 110; And the end of second plain conductor 90 is corresponding to first metal electrode 100; Therefore electric current can be distributed between the end and second metal electrode 110 of first plain conductor 45 when importing transparency conducting layer 80, also can be distributed between the end and first metal electrode 100 of second plain conductor 90.In order more to promote the luminous efficiency of light emitting diode construction of the present invention; Therefore the present invention covers first plain conductor 45 with insulating barrier 70; The material of insulating barrier 70 comprises silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums or other insulating material; So can avoid electric current to be distributed in a large number between the end and second metal electrode 110 of first plain conductor 45, also avoid between the end and first metal electrode 100 of a large amount of second plain conductors 90 that distribute of electric current.Electric current is distributed more uniformly, further increase the luminous efficiency of light emitting diode construction.
See also Fig. 3 A and Fig. 3 B, it is the vertical view of the light emitting diode construction of another preferred embodiment of the present invention and C-C ' the direction cutaway view of Fig. 3 A; As shown in the figure, this embodiment and a last embodiment in comparison, each insulating barrier 70 has more a plurality of storage tanks 72 among this embodiment, transparency conducting layer 80 extends and is arranged in the storage tank 72.So can let transparency conducting layer 80 to extending below by storage tank 72, electric current can be dispersed to second semiconductor layer 60 comparatively uniformly, so more can increase the luminous efficiency of light emitting diode construction.
In sum; Light emitting diode construction of the present invention is to be located on the substrate by first semiconductor layer, and first plain conductor is located at first semiconductor layer top, and the active layers and second semiconductor layer are located at first semiconductor layer top in regular turn; The active layers and second semiconductor layer are provided with plurality of grooves; A plurality of first plain conductors lay respectively in the plurality of grooves, and insulating barrier covers first plain conductor, and transparency conducting layer is located at second semiconductor layer and is covered insulating barrier; A plurality of second plain conductors are located at transparency conducting layer and corresponding second semiconductor layer; With by first plain conductor and second plain conductor electric current being evenly distributed in first semiconductor layer and second semiconductor layer, and avoid current concentration between first plain conductor and second plain conductor by insulating barrier, be covered in second semiconductor layer and transparency conducting layer is a continous way; So that electric current can be uniformly distributed in second semiconductor layer, to increase the luminous efficiency of light emitting diode construction.
In sum; Be merely preferred embodiment of the present invention; Be not to be used for limiting the scope that the present invention implements, all equalizations of doing according to the described shape of claim scope of the present invention, structure, characteristic and spirit change and modify, and all should be included in the claim scope of the present invention.
Claims (8)
1. a light emitting diode construction is characterized in that, comprises:
One substrate;
One first semiconductor layer is located at this substrate top;
One active layers is located at this first semiconductor layer top, and this first semiconductor layer of exposed part;
One second semiconductor layer is located at this active layers top, and this active layers and this second semiconductor layer have plurality of grooves;
A plurality of first plain conductors are located at this first semiconductor layer top, and those first plain conductors lay respectively in those grooves;
A plurality of insulating barriers are located in those grooves, and cover those first plain conductors and this first semiconductor layer;
One transparency conducting layer is located at this second semiconductor layer top and is covered those insulating barriers; And
A plurality of second plain conductors are located at the top of this transparency conducting layer, and to should second semiconductor layer.
2. light emitting diode construction as claimed in claim 1 is characterized in that, more comprises:
At least one first metal electrode is located at this first semiconductor layer top and is connected with those first plain conductors; And
At least one second metal electrode is located at this transparency conducting layer top and is connected with those second plain conductors.
3. light emitting diode construction as claimed in claim 2 is characterized in that, more comprises at least one first metal connecting piece, and this first metal connecting piece is located at this first semiconductor layer top, and is connected with this first metal electrode and those first plain conductors.
4. light emitting diode construction as claimed in claim 2 is characterized in that, more comprises at least one second metal connecting piece, and this second metal connecting piece is located at this transparency conducting layer top, and is connected with this second metal electrode and those second plain conductors.
5. light emitting diode construction as claimed in claim 2 is characterized in that, wherein the end of those first plain conductors is corresponding to this second metal electrode.
6. light emitting diode construction as claimed in claim 2 is characterized in that, wherein the end of those second plain conductors is corresponding to this first metal electrode.
7. light emitting diode construction as claimed in claim 1 is characterized in that wherein those insulating barriers have a storage tank respectively, and this transparency conducting layer extension is arranged in this storage tank.
8. light emitting diode construction as claimed in claim 1 is characterized in that, wherein the material of this insulating barrier is to be selected from one of them of silicon dioxide, titanium dioxide, alundum (Al, tantalum pentoxide, five oxidation Tritanium/Trititaniums and above-mentioned group of combination in any.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110064946.0A CN102683528B (en) | 2011-03-14 | 2011-03-14 | Structure of light-emitting diode |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110064946.0A CN102683528B (en) | 2011-03-14 | 2011-03-14 | Structure of light-emitting diode |
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| CN102683528A true CN102683528A (en) | 2012-09-19 |
| CN102683528B CN102683528B (en) | 2015-03-18 |
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| CN201110064946.0A Expired - Fee Related CN102683528B (en) | 2011-03-14 | 2011-03-14 | Structure of light-emitting diode |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200832760A (en) * | 2006-12-04 | 2008-08-01 | Sanken Electric Co Ltd | Semiconductor light-emitting device and manufacturing method thereof |
| US20090039359A1 (en) * | 2007-08-10 | 2009-02-12 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved current spreading performance |
| TW201034242A (en) * | 2008-10-20 | 2010-09-16 | Showa Denko Kk | Semiconductor light-emitting device and method for producing the same |
| CN101867002A (en) * | 2010-05-27 | 2010-10-20 | 常州美镓伟业光电科技有限公司 | Novel semiconductor light-emitting diode |
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2011
- 2011-03-14 CN CN201110064946.0A patent/CN102683528B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200832760A (en) * | 2006-12-04 | 2008-08-01 | Sanken Electric Co Ltd | Semiconductor light-emitting device and manufacturing method thereof |
| US20090039359A1 (en) * | 2007-08-10 | 2009-02-12 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved current spreading performance |
| TW201034242A (en) * | 2008-10-20 | 2010-09-16 | Showa Denko Kk | Semiconductor light-emitting device and method for producing the same |
| CN101867002A (en) * | 2010-05-27 | 2010-10-20 | 常州美镓伟业光电科技有限公司 | Novel semiconductor light-emitting diode |
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| CN102683528B (en) | 2015-03-18 |
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