CN102683481A - 用于运行真空涂层设备的方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 21
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- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 16
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 15
- 239000011737 fluorine Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 7
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- 230000002349 favourable effect Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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Abstract
本发明涉及一种用于运行真空涂层设备、尤其是用于制造薄层太阳能电池的方法，其中，在使用清洁气体完成涂层腔室清洁步骤之后并且在产品制造步骤之前实施用于将扩散阻碍层涂布到涂层腔室的壁上的涂层分离步骤。
Description
技术领域
本发明涉及一种用于运行真空涂层设备、尤其是用于制造薄层太阳能电池的方法，其中在使用清洁气体的情况下设有涂层腔室清洁步骤。
背景技术
真空涂层设备的一个重要的应用领域是最近基于硅制造薄层太阳能电池。通常对此使用PECVD方法。
薄层太阳能电池由p掺杂的和n掺杂的以及具有变化数量的本征层构成。薄层太阳能电池、所谓的串联电池的已知的类型的两种典型的层状结构在附图1A和1B中示出。
根据图1A，具有透明传导的前接触层9的玻璃10用作基质。在其之上太阳能电池由非结晶的硅沉积，所述太阳能电池由p掺杂的层8、本征层7以及n掺杂的层5构成。在其之上接下来分离同样具有p掺杂的层4、本征层3以及n掺杂的层2的微晶的电池。利用另一个透明的、传导的或者金属的反接触层1封闭太阳能电池。各个层也能够分别包括多个部分层。
根据图1B的经过修改的结构仅仅通过在（下方的）本征层7与（上方的）n掺杂的层5之间设置了中间反应层6而与根据图1A的配置不同。
或者完全在唯一的涂层腔室或者说涂层设备中实现分离，或者在不同的腔室中实现分离，其中通常掺杂的层被本征层隔开。在一次或者多次涂层过程后需要清洁不可避免地同样经过涂层的腔室壁。这通过含氟的气体来完成。清洁过程通过氟基（Fluorradikale）来进行，所述氟基在腔室壁上相对于气态的SiF4与硅连接并且接着通过泵管从腔室中移除。在清洁过程之后再进行含硅的层的沉积。
由文献DE 10 2006 035 596 B4已知所述类型的清洁方法。
利用含氟的气体清洁涂层腔室造成氟在壁上和壁中的积聚。氟的剩余含量能够对于接下来硅太阳能电池的分离是不利的并且降低所述硅太阳能电池的效率。
发明内容
本发明提出具有权利要求1的特征的方法。对本发明思路的有利的改进是从属权利要求的主题。
为了通过氟降低污染，引入附加的层的沉积。层用作（扩散）阻碍并且在利用含氟的气体清洁腔室之后以及在加载接下来的基质之前同样借助于PEVCD进行分离。因此层覆盖腔室壁并且如此减小氟到气体涂层的边界面的扩散。因此减小了在表面上的氟含量，从而在接下来硅的分离过程中也减小了气相中氟原子/氟分子的含量。
专门结合涂层腔室清洁作为制造薄层太阳能电池的中间步骤，提出的层造成太阳能电池结构的氟负荷的减轻，这反映在更高的、稳定的效率中。但是本发明也有利地可在用于制造其它的半导体产品的真空涂层设备的运行时使用并且必要时甚至可超出半导体技术领域使用。
在硅分离过程、特别是制造基于硅的薄层太阳能电池的前后关系中，设有本发明的有利的实施方式，从而在层分离步骤中涂布具有硅、氧化硅和/或碳化硅的扩散阻碍层。
由目前的观点看硅氧化物是优选的，所述硅氧化物由于其较高的厚度显示出特别好的扩散阻碍性。此外能够规定，涂布非结晶的或者微晶的或者具有过渡相的硅。分离非结晶的或者微晶的硅相对于具有氧原子或者含有氧的分子的污染物就是相对不敏感的。最后能够规定，涂布具有非结晶的碳化硅的层。
所述层的分离方法的细节和方法参数对于本领域技术人员来说是已知的并且因此在这里不进行更详细的解释。
取决于层材料和分离温度如此有利地调整扩散阻碍层的层厚度，从而使得扩散阻碍层在真空涂层设备的按规定的运行中稳定地完全附着到涂层腔室的壁上。层的厚度至少应该有几纳米，其中随着层厚度的增加，层的（扩散）阻碍效果也会变得更好。从目前的观点来看，层厚范围在5nm与500nm之间是有意义的，并且优选层厚超过50nm。
附图说明
接下来借助实施例对按本发明的方法进行详细解释。附图示出：
图1A和1B示意性地示出了串联式的薄层太阳能电池的层状结构，并且
图2是用于解释实施所提出的方法的示意性图示。
具体实施方式
图2示意性地示出了在按本发明的运行方法的三个阶段中涂层腔室11的内部的横截面。在阶段I中，在利用含氟的气体清洁腔室的步骤之后残留物13位于壁上和壁中。在通过PECVD分离步骤没有基质地到达的阶段II中，扩散阻碍层15位于涂层腔室11 的整个内壁上。该扩散阻碍层完全覆盖所有在第一阶段中还存在的残留物并且防止其扩散到腔室的内部。
在阶段III中，用于制造太阳能电池的基质17位于完全利用扩散阻碍层15进行加衬处理的涂层腔室11中，并且所述基质经受传统的涂层步骤。在含硅的层的一次或者多次沉积之后再度利用含氟的气体实施清洁步骤并且在此移除扩散阻碍层15并且达到阶段I的状态。
另外，本发明的实施方式也不限于以上解释的实施例以及以上强调的方面，而是在按照专业的处理方式的范围中的多种变化中同样也是可能实现的。
Claims (8)
1.用于运行真空涂层设备、尤其是用于制造薄层太阳能电池的方法，其中，在使用清洁气体完成涂层腔室清洁步骤之后并且在产品制造步骤之前实施用于将扩散阻碍层（15）涂布到涂层腔室（11）的壁上的涂层分离步骤。
2.按权利要求1所述的方法，
其中，在所述涂层腔室清洁步骤中使用含氟的气体作为清洁气体。
3.按权利要求1或2所述的方法，
其中，在所述涂层分离步骤中涂布具有硅、氧化硅和/或碳化硅和/或氮化硅的扩散阻碍层（15）。
4.按权利要求3所述的方法，
其中，在所述涂层分离步骤中涂布非结晶的或者微晶的或者具有过渡相的硅。
5.按权利要求3所述的方法，
其中，在所述涂层分离步骤中涂布具有非结晶的碳化硅的层（15）。
6.按上述权利要求中任一项所述的方法，
其中，取决于层材料以及分离温度如此调整所述扩散阻碍层（15）的层厚度，从而使得所述扩散阻碍层在真空涂层设备的按规定的运行中稳定地完全附着在所述涂层腔室（11）的壁上。
7.按权利要求6所述的方法，
其中，将所述扩散阻碍层（15）的层厚度调整到5nm与500nm之间、尤其是50nm与300nm之间的范围内的一个值。
8.按上述权利要求中任一项所述的方法，
其中，在涂层分离步骤之后的产品制造步骤具有薄层太阳能电池的n掺杂（2：5）的或者p掺杂（4：8）的或者本征（3：7）的硅层的分离过程。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102011005557A DE102011005557A1 (de) | 2011-03-15 | 2011-03-15 | Verfahren zum Betreiben einer Vakuum-Beschichtungsmaschine |
| DE102011005557.6 | 2011-03-15 |
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| Publication Number | Publication Date |
|---|---|
| CN102683481A true CN102683481A (zh) | 2012-09-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2012100664287A Pending CN102683481A (zh) | 2011-03-15 | 2012-03-14 | 用于运行真空涂层设备的方法 |
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| Country | Link |
|---|---|
| US (1) | US20120288984A1 (zh) |
| JP (1) | JP2012195586A (zh) |
| KR (1) | KR20120105372A (zh) |
| CN (1) | CN102683481A (zh) |
| DE (1) | DE102011005557A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938185A (zh) * | 2013-01-21 | 2014-07-23 | 中国兵器工业第五九研究所 | 一种管状零件内孔涂层的制备方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11637180B2 (en) * | 2021-01-28 | 2023-04-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Transistor gate structures and methods of forming the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010032978A2 (en) * | 2008-09-19 | 2010-03-25 | Electronics And Telecommunications Research Institute | Method for depositing amorphous silicon thin film by chemical vapor deposition |
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| US6680489B1 (en) * | 1995-12-20 | 2004-01-20 | Advanced Technology Materials, Inc. | Amorphous silicon carbide thin film coating |
| US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
| US7465478B2 (en) * | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
| US20050230047A1 (en) * | 2000-08-11 | 2005-10-20 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus |
| TWI300950B (en) * | 2002-11-29 | 2008-09-11 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor structure, semiconductor device, and method and apparatus for manufacturing the same |
| DE102006035596B4 (de) | 2006-07-27 | 2008-04-30 | Qimonda Ag | Verfahren und Anordnung zur Durchführung eines Ätz- oder Reinigungsschrittes |
| KR20080092080A (ko) * | 2007-04-11 | 2008-10-15 | 신성특수화학(주) | 아크릴 에멀젼 및 수분산성 아크릴 우레탄 수지를 포함하는플라스틱 증착용 하도 조성물 및 그의 제조방법 |
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- 2012-03-14 CN CN2012100664287A patent/CN102683481A/zh active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2010032978A2 (en) * | 2008-09-19 | 2010-03-25 | Electronics And Telecommunications Research Institute | Method for depositing amorphous silicon thin film by chemical vapor deposition |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103938185A (zh) * | 2013-01-21 | 2014-07-23 | 中国兵器工业第五九研究所 | 一种管状零件内孔涂层的制备方法 |
| CN103938185B (zh) * | 2013-01-21 | 2016-09-14 | 中国兵器工业第五九研究所 | 一种管状零件内孔涂层的制备方法 |
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| Publication number | Publication date |
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| DE102011005557A1 (de) | 2012-09-20 |
| US20120288984A1 (en) | 2012-11-15 |
| JP2012195586A (ja) | 2012-10-11 |
| KR20120105372A (ko) | 2012-09-25 |
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